CN103201801A - Method for producing metal plate low-resistance chip resistor - Google Patents

Method for producing metal plate low-resistance chip resistor Download PDF

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Publication number
CN103201801A
CN103201801A CN2011800454719A CN201180045471A CN103201801A CN 103201801 A CN103201801 A CN 103201801A CN 2011800454719 A CN2011800454719 A CN 2011800454719A CN 201180045471 A CN201180045471 A CN 201180045471A CN 103201801 A CN103201801 A CN 103201801A
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metallic plate
width
resistance metallic
diaphragm
resistance
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CN103201801B (en
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平野立树
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Kamaya Electric Co Ltd
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Kamaya Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C3/00—Non-adjustable metal resistors made of wire or ribbon, e.g. coiled, woven or formed as grids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/006—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistor chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

The purpose of the present invention is to provide a method for producing a metal plate low-resistance chip resistor for which a protective film can be formed easily without being affected by the width of the metal plate resistor at the stripe shaped parts and for which the protective film width can be adjusted according to the variations in thickness in the direction of the width of the metal plate resistor. The purpose is also for the metal plate low-resistance chip resistor to have increased freedom in adjustment of the width of the protective film. To do so, a protective film forming step (step S13) that forms a protective film on the front surface and back surface of a metal plate resistor is carried out first and a slit forming step (step S14) that forms a slit in the metal plate resistor and forms the metal plate resistor into a shape having the stripe shaped parts and connecting parts is carried out thereafter. In addition, a metal plate resistor thickness measurement step (step 12) that measures the thickness at various positions along the width of the metal plate resistor for which the protective film is formed is carried out before the protective film forming step (step S13), and in the protective film forming step (step S13), the width of the protective film is set according to the thickness at each position that has been measured along the width of the metal plate resistor.

Description

The manufacture method of metallic plate low resistance chip resister
Technical field
The present invention relates to use the manufacture method of the chip resister of resistance metallic plate.
Background technology
In various control circuits such as supply unit and rotating speed of motor control circuit, need to detect the means of electric current.The means that have multiple detection electric current are used electronic components such as shunt resistor usually mostly.As the resistor that is applicable to this shunt resistor etc., known have a chip resister.In addition, in the described chip resister, in the manufacturing of resistance value for the so low-down chip resister of resistance value of number m Ω, mainly adopt resistance metallic plate.The low-resistance chip resister that uses described resistance metallic plate to make is generally known as metallic plate low resistance chip resister.
Shown in (a)～Figure 16 of Figure 16 (c), the outward appearance of metallic plate low resistance chip resister 1 is rectangular-shaped, uses resistance metallic plate 2 to make and forms.Be formed with diaphragm 3a, 3b respectively on the surperficial 2a of resistance metallic plate 2 and the back side 2b.Described diaphragm 3a, 3b are the film of electrical insulating property.In addition; be not formed with on the surface (being both ends 2b-1,2b-2 and both ends of the surface 2c, the 2d of Width of both ends 2a-1,2a-2, the back side 2b of the Width of surperficial 2a) of both ends 2e, 2f of length direction (left and right directions of (b) of Figure 16 and (c) of Figure 16) of the resistance metallic plate 2 of diaphragm 3a, 3b, be formed with electrode plated film 4a, 4b.
Each size (unit: mm) about chip resister 1, for example the total length L1 of regulation chip resister 1 is 1.6 ± 0.1(franchise), the length C of electrode plated film 4a, 4b is 0.2 ± 0.1(franchise), the width W of chip resister 1 is 0.8 ± 0.1(franchise), the thickness H of chip resister 1 is 0.3 ± 0.1(franchise).Described each size that comprises the chip resister 1 of franchise is that the restriction on the size when at circuit substrate chip resister 1 being installed etc. is set.In addition, the length L 2 of diaphragm 3a, 3b is poor (L1-2 * C) of length (total length) 2 * C of electrode plated film 4a, the 4b of the total length L1 of chip resister 1 and both sides.In other words, L2 is the length of the part that covers of protected film 3a, the 3b of resistance metallic plate 2.In addition, the thickness of resistance metallic plate 2 is thickness T, and the length of resistance metallic plate 2 is length L 3.
In the past; cut operation (step S5) and strip portion cut-out operation (step S6) by the cut-out of the ribbon resistance metallic plate shown in the process flow chart of implementing Figure 17 successively operation (step S1), slit formation operation (step S2), diaphragm formation operation (step S3), electrode plated film formation operation (step S4), strip portion, make the metallic plate low resistance chip resister 1 of structure shown in Figure 16.
Form operation (step S2) and diaphragm formation operation (step S3) for slit, further specify with reference to Figure 18 and Figure 19.In addition, cut operation (step S5) and strip portion cut-out operation (step S6) for ribbon resistance metallic plate cut-out operation (step S1), electrode plated film formation operation (step S4), strip portion, cutting off operation (step S11), electrode plated film with ribbon resistance metallic plate shown in Figure 1, to form that operation (step S15), strip portion cut operation (step S16), strip portion cuts off operation (step S17) identical, and the detailed content of these operations is seen below and stated.
Shown in (a)～Figure 18 of Figure 18 (c), form in the operation (step S2) at slit, form a plurality of (being exemplified as 5 among the figure) slit 6 at the resistance metallic plate 2B of rectangle.Cut off in the operation (step S1) at the ribbon resistance metallic plate, from the resistance metallic plate 2A(of band shape with reference to Fig. 2) cut resistance metallic plate 2B.Slit 6 extends and is parallel to each other at the Width (left and right directions of Figure 18 (b)) of resistance metallic plate 2B at the length direction (above-below direction of Figure 18 (b)) of resistance metallic plate 2B.In addition, be that benchmark is set the position that forms slit 6 with telltale mark 5.By forming described a plurality of slit 6, the shape of resistance metallic plate 2B becomes the shape with a plurality of (being exemplified as 4 among the figure) strip portions 7 and connecting portion 8, described strip portion 7 length directions at resistance metallic plate 2B extend, and described connecting portion 8 connects the two ends of the length direction (above-below direction of Figure 18 (b)) of described a plurality of strip portion 7 respectively.
Shown in (a)～Figure 19 of Figure 19 (c); form in the operation (step S3) at the diaphragm of following; by silk screen print method etc., at each strip portion 7, on the surperficial 2B-1 of resistance metallic plate 2B and back side 2B-2, form a plurality of (being exemplified as 4 among the figure) diaphragm 3A, 3B respectively.Described diaphragm 3A, 3B extend and are parallel to each other at the Width of resistance metallic plate 2B at the length direction of resistance metallic plate 2B.In addition, be that benchmark is set the position that forms diaphragm 3A, 3B with telltale mark 5.
In addition, the prior art document as the manufacture method that discloses chip resister for example has following patent documentation 1,2.
The prior art document
Patent documentation
Patent documentation 1: Japan Patent open communique spy open 2009-218552 number
Patent documentation 2: the international book that discloses No. 2008/018219
Summary of the invention
The technical problem to be solved in the present invention
The manufacture method of described metallic plate low resistance chip resister in the past formed slit 6 before forming diaphragm 3A, 3B.That is, after forming strip portion 7 at resistance metallic plate 2B formation slit 6, at the described strip 7 formation diaphragm 3A of portion, 3B.Therefore, there is following problems in the manufacture method of described metallic plate low resistance chip resister in the past.
That is, when forming slit 6 prior to diaphragm 3A, 3B, must form diaphragm 3A, 3B at surperficial 2B-1 and the back side 2B-2 of the very narrow resistance metallic plate 2B of the width of strip portion 7.Therefore, the formation of diaphragm 3A, 3B is very difficult.In addition, when further requiring the miniaturization of chip resister 1, because the width of the resistance metallic plate 2B of strip portion 7 is narrower, it is more difficult therefore to form diaphragm 3A, 3B.In addition, when forming diaphragm 3A, 3B, generally by silk screen print method slurry is formed pattern, and then, photoetching process adopted for improving its dimensional accuracy.In addition, when adopting described photoetching process, if at first form slit 6 prior to diaphragm 3A, 3B, then can make manufacture method become complicated.
In addition, for will be for the manufacture of the resistance metallic plate 2A(of the band shape of chip resister 1 with reference to Fig. 2) form desirable thickness, make by carrying out annealing operation and rolling process repeatedly., the thickness of the resistance metallic plate 2A of the band shape of making can not become fully evenly, and particularly the Width at resistance metallic plate 2A can produce uneven thickness.Therefore, on the resistance metallic plate 2B that the resistance metallic plate 2A from band shape cuts, on Width, also can produce uneven thickness.
In addition, the uneven thickness on the Width of described resistance metallic plate 2B can cause the inequality of the resistance value of chip resister 1.On the other hand, the resistance value of chip resister 1 is by being determined by the width W of the diaphragm 3a of resistance metallic plate 2,3b cover part, length L 2, thickness T (with reference to Figure 16).That is, determined by formula described later (1), formula (3).Therefore, in the manufacture process of chip resister 1, according to the uneven thickness of the Width of resistance metallic plate 2B, need by adjusting the width L2 of each diaphragm 3A, 3B shown in Figure 19 1, L2 2, L2 3, L2 4, reduce the inequality of the resistance value of chip resister 1.In addition, at this moment, with the width L2 of diaphragm 3A, 3B 1, L2 2, L2 3, L2 4The allowed band of the adjustment that (being the length L 2 of diaphragm 3a, the 3b of chip resister 1) is relevant is preferably big as far as possible.
To this as shown in figure 20, under the situation of the size example of aforementioned chip resister 1, the adjustment allowed band of the length L 2 of diaphragm 3a, the 3b of manufacture method in the past is 0.4mm.That is, because form slit 6 prior to diaphragm 3A, 3B, thus in chip resister 1, determine the length L 3 of resistance metallic plate 2 prior to the length L 2 of diaphragm 3a, 3b, and determine the total length L1 of chip resister 1.The total length L1 that for example establishes chip resister 1 is 1.6mm; the longest at total length 2 * C of electrode plated film 4a, 4b is 0.6mm(=2 * (0.2+0.1)) situation and the shortlyest be 0.2mm(=2 * (0.2-0.1)) situation under, the length L 2 of diaphragm 3a, 3b is respectively 0.9mm and 1.3mm.Therefore, the adjustment allowed band of the length L 2 of diaphragm 3a, 3b becomes 0.4mm(=1.3-0.9).The total length L1 of chip resister 1 is made as 1.5mm(=1.6-0.1) and 1.7mm(=1.6+0.1) time, it is also identical to adjust allowed band.
In addition, the method for the inequality of the resistance value of the chip resister that causes as the uneven thickness that reduces because of the Width of resistance metallic plate has the method for adjusting resistance value by the finishing resistance metallic plate.; behind the finishing resistance metallic plate; when the chip resister that will use the described resistance metallic plate that is trimmed is connected with load and makes electric current flow through described chip resister; owing to produce focus on the described chip resister, there are the problems such as life characteristic even load deterioration in characteristics that chip resister can take place.Therefore, the inequality of the resistance value of the chip resister 1 that causes for the uneven thickness that reduces because of the Width of resistance metallic plate 2B is not the method that adopts finishing resistance metallic plate 2B, and needs by adjusting the width L2 of diaphragm 3A, 3B 1, L2 2, L2 3, L2 4Method implement.
Therefore in view of described problem; the manufacture method that the purpose of this invention is to provide a kind of metallic plate low resistance chip resister; can not be subjected to the influence ground of the resistance metallic plate width of strip portion easily to form diaphragm; in addition; can adjust the width (length of the diaphragm of chip resister) of diaphragm according to the uneven thickness of the Width of resistance metallic plate, and then can enlarge the allowed band of adjustment of the width (length of the diaphragm of chip resister) of diaphragm.
The technical scheme of technical solution problem
Solve the manufacture method of the first metallic plate low resistance chip resister of inventing of described problem, it is characterized in that, use rectangle or banded resistance metallic plate, make described chip resister by implementing following operation successively: diaphragm forms operation, respectively at surface and the back side of described resistance metallic plate, Width at described resistance metallic plate forms a plurality of diaphragms, and described diaphragm extends at the length direction of described resistance metallic plate; Slit forms operation, by forming slit at described resistance metallic plate, the shape of described resistance metallic plate is formed the shape with a plurality of strip portions and connecting portion, described slit between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate, described a plurality of strip portion has than the wideer width of described diaphragm and at the length direction of described resistance metallic plate extends, and described connecting portion connects the two ends of the length direction of described a plurality of strip portion respectively; The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film; Strip portion cuts operation, cuts described strip portion from described connecting portion; And strip portion cuts off operation, and described strip portion is cut into a plurality of monolithics.
In addition; the manufacture method of the metallic plate low resistance chip resister of second invention is in the manufacture method of the metallic plate low resistance chip resister of first invention; it is characterized in that; before forming operation, implements described diaphragm resistance metallic plate thickness measure operation; the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation; form in the operation at described diaphragm; according to the thickness of each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures, set the width of described a plurality of diaphragms respectively.
In addition, the manufacture method of the metallic plate low resistance chip resister of the 3rd invention, it is characterized in that, use rectangle or banded resistance metallic plate, make described chip resister by implementing following operation successively: diaphragm forms operation, at surface and the back side of described resistance metallic plate, at a plurality of diaphragms of Width formation of described resistance metallic plate, described diaphragm extends at the length direction of described resistance metallic plate respectively; Strip cuts off operation, by cut off described resistance metallic plate in off-position, cut and have than the wideer width of described diaphragm and a plurality of strip portion of extending at the length direction of described resistance metallic plate, described off-position between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate; The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film; And monolithic cuts off operation, and described strip portion is cut into a plurality of monolithics.
In addition; the manufacture method of the metallic plate low resistance chip resister of the 4th invention is in the manufacture method of the metallic plate low resistance chip resister of the 3rd invention; it is characterized in that; before forming operation, implements described diaphragm resistance metallic plate thickness measure operation; the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation; form in the operation at described diaphragm; according to the thickness of each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures, set the width of described a plurality of diaphragms respectively.
The invention effect
Manufacture method according to the first metallic plate low resistance chip resister of inventing, it is characterized in that, use rectangle or banded resistance metallic plate, make described chip resister by implementing following operation successively: diaphragm forms operation, respectively at surface and the back side of described resistance metallic plate, Width at described resistance metallic plate forms a plurality of diaphragms, and described diaphragm extends at the length direction of described resistance metallic plate; Slit forms operation, by forming slit at described resistance metallic plate, the shape of described resistance metallic plate is formed the shape with a plurality of strip portions and connecting portion, described slit between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate, described a plurality of strip portion has than the wideer width of described diaphragm and at the length direction of described resistance metallic plate extends, and described connecting portion connects the two ends of the length direction of described a plurality of strip portion respectively; The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film; Strip portion cuts operation, cuts described strip portion from described connecting portion; And strip portion cuts off operation, and described strip portion is cut into a plurality of monolithics, therefore forms diaphragm prior to slit (being strip portion).
Therefore, even when the width of the resistance metallic plate that for example requires the further miniaturization of chip resister, strip portion becomes narrower, also can not be subjected to the width of the resistance metallic plate of described strip portion easily to form diaphragm with influencing.In addition, can also enlarge the allowed band (with reference to Fig. 8: detailed content will be narrated in the back) of adjustment of the width (length of the diaphragm of chip resister) of diaphragm.
Manufacture method according to the second metallic plate low resistance chip resister of inventing; in the manufacture method of the first metallic plate low resistance chip resister of inventing; it is characterized in that; before forming operation, implements described diaphragm resistance metallic plate thickness measure operation; the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation; form in the operation at described diaphragm; according to the thickness of each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures, set the width of described a plurality of diaphragms respectively.Therefore except the effect with described first invention, can also adjust the width (length of the diaphragm of chip resister) of diaphragm according to the uneven thickness of the Width of resistance metallic plate.Therefore, can reduce the inequality of the resistance value of the chip resister that the uneven thickness because of the Width of resistance metallic plate brings.
Manufacture method according to the 3rd metallic plate low resistance chip resister of inventing, it is characterized in that, use rectangle or banded resistance metallic plate, make described chip resister by implementing following operation successively: diaphragm forms operation, respectively at surface and the back side of described resistance metallic plate, Width at described resistance metallic plate forms a plurality of diaphragms, and described diaphragm extends at the length direction of described resistance metallic plate; Strip cuts off operation, by cut off described resistance metallic plate in off-position, cut and have than the wideer width of described diaphragm and a plurality of strip portion of extending at the length direction of described resistance metallic plate, described off-position between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate; The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film; And monolithic cuts off operation, and described strip portion is cut into a plurality of monolithics, therefore forms diaphragm prior to cutting strip portion.
Therefore, even when the width of the resistance metallic plate that for example requires the further miniaturization of chip resister, strip portion becomes narrower, also can not be subjected to the width of the resistance metallic plate of described strip portion easily to form diaphragm with influencing.In addition, can also enlarge the allowed band (with reference to Fig. 8: detailed content will be narrated in the back) of adjustment of the width (length of the diaphragm of chip resister) of diaphragm.
Manufacture method according to the 4th metallic plate low resistance chip resister of inventing; in the manufacture method of the 3rd metallic plate low resistance chip resister of inventing; it is characterized in that; before forming operation, implements described diaphragm resistance metallic plate thickness measure operation; the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation; form in the operation at described diaphragm; thickness according to each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures; set the width of described a plurality of diaphragms respectively; therefore except the effect with described the 3rd invention; can also adjust the width (length of the diaphragm of chip resister) of diaphragm according to the uneven thickness of the Width of resistance metallic plate.Therefore, can reduce the inequality of the resistance value of the chip resister that the uneven thickness because of the Width of resistance metallic plate brings.
Description of drawings
Fig. 1 is the flow chart of manufacturing process of the metallic plate low resistance chip resister of expression embodiments of the present invention.
(a) of Fig. 2 is the stereogram for the ribbon resistance metallic plate that ribbon resistance metallic plate cut-out operation is described, and (b) of Fig. 2 is the vertical view that cuts off the rectangle resistance metallic plate of operation for explanation ribbon resistance metallic plate.
(a) of Fig. 3 is the stereogram for the resistance metallic plate that resistance metallic plate thickness measure operation is described, (b) of Fig. 3 is the vertical view for the resistance metallic plate that resistance metallic plate thickness measure operation is described, and (c) of Fig. 3 is for the cross section enlarged drawing of the resistance metallic plate that resistance metallic plate thickness measure operation is described (along the cross section enlarged drawing of the A-A line of Fig. 3 (b)).
(a) of Fig. 4 is for the stereogram that diaphragm is formed resistance metallic plate that operation describes etc.; (b) of Fig. 4 is for the vertical view that diaphragm is formed resistance metallic plate that operation describes etc., and (c) of Fig. 4 is for the cross section enlarged drawing that diaphragm is formed resistance metallic plate that operation describes etc. (along the cross section enlarged drawing of the B-B line of Fig. 4 (b)).
(a) of Fig. 5 is for the stereogram that slit is formed resistance metallic plate that operation describes etc., (b) of Fig. 5 is for the vertical view that slit is formed resistance metallic plate that operation describes etc., and (c) of Fig. 5 is for the cross section enlarged drawing that slit is formed resistance metallic plate that operation describes etc. (along the cross section enlarged drawing of the C-C line of Fig. 5 (b)).
(a) of Fig. 6 is for the stereogram that the electrode plated film is formed resistance metallic plate that operation describes etc., (b) of Fig. 6 is for the vertical view that the electrode plated film is formed resistance metallic plate that operation describes etc., and (c) of Fig. 6 is for the cross section enlarged drawing that the electrode plated film is formed resistance metallic plate that operation describes etc. (along the cross section enlarged drawing of the D-D line of Fig. 6 (b)).
(a) of Fig. 7 is for the stereogram that strip portion is cut resistance metallic plate that operation describes etc., (b) of Fig. 7 is for strip portion being cut the stereogram that operation and strip portion cut off the strip portion that operation describes, and (c) of Fig. 7 is for the stereogram that strip portion is cut off the metallic plate low resistance chip resister (monolithic) that operation describes.
Fig. 8 is the table of each size relationship of the expression metallic plate low resistance chip resister relevant with the manufacture method of the metallic plate low resistance chip resister of embodiments of the present invention.
Fig. 9 is the flow chart of manufacturing process of the metallic plate low resistance chip resister of expression another embodiment of the present invention.
(a) of Figure 10 is the stereogram for the ribbon resistance metallic plate that ribbon resistance metallic plate cut-out operation is described, and (b) of Figure 10 is the vertical view that cuts off the rectangle resistance metallic plate of operation for explanation ribbon resistance metallic plate.
(a) of Figure 11 is the stereogram for the resistance metallic plate that resistance metallic plate thickness measure operation is described, (b) of Figure 11 is the vertical view for the resistance metallic plate that resistance metallic plate thickness measure operation is described, and (c) of Figure 11 is for the cross section enlarged drawing of the resistance metallic plate that resistance metallic plate thickness measure operation is described (along the cross section enlarged drawing of the A1-A1 line of Figure 11 (b)).
(a) of Figure 12 is for the stereogram that diaphragm is formed resistance metallic plate that operation describes etc.; (b) of Figure 12 is for the vertical view that diaphragm is formed resistance metallic plate that operation describes etc., and (c) of Figure 12 is for the cross section enlarged drawing that diaphragm is formed resistance metallic plate that operation describes etc. (along the cross section enlarged drawing of the B1-B1 line of Figure 12 (b)).
(a) of Figure 13 is for the stereogram that strip is cut off resistance metallic plate that operation describes etc., (b) of Figure 13 is for the stereogram that strip is cut off the strip portion that operation describes, and (c) of Figure 13 is for the cross section enlarged drawing that strip is cut off the strip portion that operation describes (along the cross section enlarged drawing of the C1-C1 line of Figure 13 (b)).
(a) of Figure 14 is for the stereogram that the electrode plated film is formed the strip portion that operation describes, and (c) of Figure 14 is for the cross section enlarged drawing that the electrode plated film is formed the strip portion that operation describes (along the cross section enlarged drawing of the D1-D1 line of Figure 14 (a)).
(a) of Figure 15 is the stereogram for the strip portion that monolithic cut-out operation is described, and (b) of Figure 15 is the stereogram for the metallic plate low resistance chip resister (monolithic) that monolithic cut-out operation is described.
(a) of Figure 16 is the stereogram of the structure of expression metallic plate low resistance chip resister, (b) of Figure 16 is the vertical view of structure of the described metallic plate low resistance chip resister of expression, (c) of Figure 16 be the described metallic plate low resistance chip resister of expression structure, along the sectional view of the E-E line of Figure 16 (b).
Figure 17 is the flow chart of representing the manufacturing process of metallic plate low resistance chip resister in the past.
(a) of Figure 18 is the stereogram for the resistance metallic plate that slit formation operation is described, (b) of Figure 18 is for the vertical view that slit is formed the resistance metallic plate that operation describes, and (c) of Figure 18 is for the cross section enlarged drawing that slit is formed the resistance metallic plate that operation describes (along the cross section enlarged drawing of the F-F line of Figure 18 (b)).
(a) of Figure 19 is for the stereogram that diaphragm is formed resistance metallic plate that operation describes etc.; (b) of Figure 19 is for the vertical view that diaphragm is formed resistance metallic plate that operation describes etc., and (c) of Figure 19 is for the cross section enlarged drawing that diaphragm is formed resistance metallic plate that operation describes etc. (along the cross section enlarged drawing of the G-G line of Figure 19 (b)).
Figure 20 is the table of each size relationship of the expression metallic plate low resistance chip resister relevant with the manufacture method of in the past metallic plate low resistance chip resister.
Embodiment
Below, specify embodiments of the present invention with reference to accompanying drawing.
With reference to Fig. 1～Fig. 7 and Figure 16, the manufacture method of the chip resister of embodiments of the present invention is described.In addition, the structure of the metallic plate low resistance chip resister of making about the manufacture method of the chip resister by present embodiment owing to be illustrated with reference to Figure 16, is omitted detailed description thereof at this.
In the present embodiment; cut operation (step S16) and strip portion cut-out operation (step S17), the metallic plate low resistance chip resister 1 of manufacturing structure as shown in figure 16 by the cut-out of the ribbon resistance metallic plate shown in the process flow chart of implementing Fig. 1 successively operation (step S11), resistance metallic plate thickness measure operation (step S12), diaphragm formation operation (step S13), slit formation operation (step S14), electrode plated film formation operation (step S15), strip portion.
Specifically, shown in Fig. 2 (a), cut off in the operation (step S11) at the ribbon resistance metallic plate, utilize shearing devices such as laser, WEDM (ワ イ ヤ is put Electricity), cutting knife, the resistance metallic plate 2A of the band shape that will transport to arrow J direction by conveying device (omit diagram) is cutting off with the line of cut position shown in single-point line (imaginary line) K.Banded resistance metallic plate 2A is made by materials such as FeCrAl system, CuNi system or CuMn systems, in order to obtain desirable thickness, by with the described material of slab state through various operations, carry out annealing operation and rolling process repeatedly and make.
With the resistance metallic plate 2A of the band shape result after described off-position is cut off, obtain the resistance metallic plate 2B of the rectangle shown in (b) of Fig. 2.Shown in Fig. 2 (a), on the resistance metallic plate 2A of band shape, in the both sides of Width and along its length with certain telltale mark 5 that is interval with.Described telltale mark 5 is positioned at the leading section of the length direction of the resistance metallic plate 2B of rectangle shown in (b) of Fig. 2 and is positioned at the both sides of Width.In addition, be not limited thereto, telltale mark 5 can exist only in the one-sided of described Width, in addition, also can be located at the rearward end of length direction of resistance metallic plate 2B or central portion etc.
Shown in (a)～Fig. 3 of Fig. 3 (c); in ensuing resistance metallic plate thickness measure operation (step S12), utilize thickness of slab measurement mechanism (omit diagram) to measure to be used to form a plurality of (being exemplified as 4 among the figure) diaphragm 3A, 3B(and represent with imaginary line (single-point line)) the thickness T of position of Width (left and right directions of Fig. 3 (b)) of resistance metallic plate 2B 1, T 2, T 3, T 4Be each position of the Width of the benchmark resistance metallic plate 2B that set to be used for measures described thickness of slab with telltale mark 5.
In addition, in illustrative example, at each diaphragm 3A, 3B, set the position that thickness of slab is measured at a place respectively in each position of the Width of the resistance metallic plate 2B that be used for to measure thickness of slab, but be not limited thereto.For example; can be respectively at each diaphragm 3A, 3B; each position at the Width of the resistance metallic plate 2B that be used for to measure thickness of slab is set the position that thickness of slab is measured in many places respectively; and the average thickness value of the resistance metallic plate 2B that will measure at described a plurality of positions, as the thickness T of resistance metallic plate 2B in the position of Width 1, T 2, T 3, T 4
Shown in (a)～Fig. 4 of Fig. 4 (c); form in the operation (step S13) at ensuing diaphragm; by silk screen print method or photoetching process etc., on the surperficial 2B-1 of resistance metallic plate 2B and back side 2B-2, form a plurality of (being exemplified as 4 among the figure) diaphragm 3A, 3B respectively.Described diaphragm 3A, 3B extend and are parallel to each other at the Width of resistance metallic plate 2B at the length direction of resistance metallic plate 2B.In addition, be that benchmark is set the position that forms diaphragm 3A, 3B with telltale mark 5.
In addition, form in the operation at described diaphragm, according to the thickness T of the position of the Width of the resistance metallic plate 2B that in aforesaid resistance metallic plate thickness measure operation (step S12), measures 1, T 2, T 3, T 4, set width separately (being the diaphragm 3a of chip resister 1, the length of the 3b) L2 of a plurality of diaphragm 3A, 3B 1, L2 2, L2 3, L2 4Specifically, according to following formula (2), calculate the width L2 of each diaphragm 3A, 3B 1, L2 2, L2 3, L2 4Formula (2) is the formula that formula (1) distortion is obtained.
[mathematical expression 1]
R = ρ L 2 n W · T n , ( n = 1,2,3,4 ) . . . ( 1 )
L 2 n = R · W · T n ρ , ( n = 1,2,3,4 ) . . . ( 2 )
In formula (1), formula (2); R represents the resistance value (target resistance values) of chip resister 1; L2 represents the length (being the length of the part that covers of protected film 3a, the 3b of resistance metallic plate 2) of diaphragm 3a, the 3b of chip resister 1; W represents the width (desired value) (being the width of resistance metallic plate 2) of chip resister 1, T nThe thickness of expression resistance metallic plate 2, ρ represents the specific insulation of resistance metallic plate 2.That is, the resistance value R of chip resister 1 is by protected film 3A, the width W of 3B cover part, length L 2, the thickness T of resistance metallic plate 2 n(L2/(W * T n)) and the specific insulation ρ of resistance metallic plate 2 determine.
To cut off width W (desired value), the specific insulation ρ that operation (step 17) determines by strip portion be known, thickness T because resistance value R(target resistance values), n(be the thickness T of position of the Width of resistance metallic plate 2B 1, T 2, T 3, T 4) also to measure the back by aforesaid resistance metallic plate thickness measure operation (step S12) be known, so use described value can calculate thickness T with the position of the Width of resistance metallic plate 2B from described formula (2) 1, T 2, T 3, T 4Width (being the diaphragm 3a of chip resister 1, the length of the 3b) L2 of corresponding each diaphragm 3A, 3B 1, L2 2, L2 3, L2 4
Calculate the width L2 of each diaphragm 3A, 3B 1, L2 2, L2 3, L2 4After; set the silk-screen patterns corresponding with described calculated value; by implementing silk screen print method based on described silk-screen patterns; surperficial 2B-1 and back side 2B-2 printing epoxy at resistance metallic plate 2B is the slurry of resin thus; and by the slurry after the described silk screen printing is carried out sintering, thereby form each diaphragm 3A, 3B.Certainly, when adopting photoetching process etc., also set the width L2 with each diaphragm 3A, 3B 1, L2 2, L2 3, L2 4The pattern of calculated value correspondence, and form each diaphragm 3A, 3B.
Shown in (a)～Fig. 5 of Fig. 5 (c), form in the operation (step S14) at ensuing slit, form a plurality of (being exemplified as 5 among the figure) slit 6 at resistance metallic plate 2B.Described slit 6 extends at the length direction (above-below direction of Fig. 5 (b)) of resistance metallic plate 2B, and is formed on the diaphragm 3A of the last adjacency of Width (left and right directions of Fig. 5 (b)) of resistance metallic plate 2B; (be the diaphragm 3A of surperficial 2B-1 side between the 3B; between the 3A and the diaphragm 3B of back side 2B-2 side; between the 3B) and the diaphragm 3A that is positioned at the Width both sides of resistance metallic plate 2B; the outside of 3B (being the outside of diaphragm 3B of the Width both sides of the outside of diaphragm 3A of Width both sides of surperficial 2B-1 side and back side 2B-2 side).In addition, be that benchmark is set the position that forms slit 6 with telltale mark 5.By forming described a plurality of slit 6, the shape of resistance metallic plate 2B becomes the shape with a plurality of (being exemplified as 4 among the figure) strip portions 7 and connecting portion 8, described strip portion 7 length directions at resistance metallic plate 2B extend, and described connecting portion 8 connects the two ends of the length direction (above-below direction of Fig. 5 (b)) of described a plurality of strip portion 7 respectively.In addition, the width of slit 6 is respectively width L4 among the figure 1, L4 2, L4 3, L4 4, L4 5, the width of the resistance metallic plate 2B of strip portion 7 (length L 3 of resistance metallic plate 2 in the chip resister 1) is respectively width L3 1, L3 2, L3 3, L3 4
For example utilize to stay the dry film that obtains with the mode exposure imaging of connecting portion 8 and the part more corresponding than the wideer strip portion of diaphragm 3A, 3B 7; covering comprises surperficial 2B-1 and this two sides of back side 2B-2 of the resistance metallic plate 2B of diaphragm 3A, 3B; and the etching method of the etching solution of various types of (the various material) that under this state, be suitable for resistance metallic plate 2B by surperficial 2B-1 and this two sides injection of back side 2B-2 to resistance metallic plate 2B, form slit 6 by etching resistance metallic plate 2B thus.By utilizing described etching method to form slit 6, the side of the resistance metallic plate 2B of strip portion 7 (faces of slit 6 one sides) 2B-5, become the rectangular tabular surface of surperficial 2B-1 and this two sides of back side 2B-2 with resistance metallic plate 2B, thereby can set the width L3 of the resistance metallic plate 2B of strip portion 7 accurately 1, L3 2, L3 3, L3 4(length L 3 of resistance metallic plate 2 in the chip resister 1).In addition, the means as forming slit 6 are not limited to etching method, also means such as available laser processing.In addition, in illustrative example, connecting portion 8 is formed on the two ends of the length direction of strip portion 7, but be not limited thereto, and also can be only forms connecting portion 8 at any end of the length direction of strip portion 7.
Shown in (a)～Fig. 6 of Fig. 6 (c); form in the operation (step S15) at ensuing electrode plated film; the both ends 2B-3 of the Width (left and right directions of Fig. 6 (c)) of the resistance metallic plate 2B that exposes at not the forming diaphragm 3A, 3B of each strip portion 7, the surface of 2B-4 form electrode plated film 4A, 4B by galvanoplastic.In addition, also form plated film 4C(at this moment on the circumference of connecting portion 8 constant resistance metallic plate 2B for ease of explanation, with the perspective representation of single-point line).As electrode plated film 4A, 4B, form for example nickel plated film and tin plated film.In addition, electrode plated film 4A, 4B also can be by impacting the plated film that nickel plating (ニ ッ ケ Le ス ト ラ イ Network め っ I), copper facing, nickel plating, tin-plated coating film obtain successively.
Shown in Fig. 7 (a) and Fig. 7 (b), cut in the operation (step S16) in ensuing strip portion, by utilizing shearing devices such as laser, WEDM, cutting knife to cut off resistance metallic plate 2B at the off-position M shown in the single-point line (imaginary line), cut strip portion 7 from connecting portion 8 thus.Amplify one that has represented from a plurality of strip portion 7 that connecting portion 8 cuts among (b) of Fig. 7.
Shown in Fig. 7 (b) and Fig. 7 (c), in ensuing strip portion's cut-out operation (step S17), utilize shearing devices such as laser, WEDM, cutting knife, at the off-position N shown in the single-point line (imaginary line) strip portion 7 is cut to a plurality of (being exemplified as 10 among the figure) monolithic.Like this, produce the metallic plate low resistance chip resister 1 shown in (c) of Fig. 7.That is, by strip portion 7 is cut to a plurality of monolithics, from resistance metallic plate 2B, diaphragm 3A, 3B and electrode plated film 4A, the 4B of strip portion 7, form resistance metallic plate 2, diaphragm 3a, 3b and electrode plated film 4a, the 4b of chip resister 1 respectively.
Corresponding relation about the size of the size of strip portion 7 and chip resister 1; the width L1 of the resistance metallic plate 2B of strip portion 7 and electrode plated film 4B, 4B is equivalent to the total length L1 of chip resister 1; the width C of electrode plated film 4A, the 4B of strip portion 7 is equivalent to the electrode plated film 4a of chip resister 1, the length C of 4b; the width L2 of diaphragm 3A, the 3B of strip portion 7 is equivalent to the length L 2 of diaphragm 3a, the 3b of chip resister 1, and the width L3 of the resistance metallic plate 2B of strip portion 7 is equivalent to the length L 3 of the resistance metallic plate 2 of chip resister 1.
In addition, any one of the resistance metallic plate 2B of the rectangle that cuts successively at the resistance metallic plate 2A from band shape all implemented the described manufacturing process that has comprised the chip resister of resistance metallic plate thickness measure operation.This be because, on the length direction of the resistance metallic plate 2A of band shape, also can produce uneven thickness sometimes, this moment, the uneven thickness of Width of each resistance metallic plate 2B was different.In addition; when having uneven thickness hardly on the length direction of the resistance metallic plate 2A of band shape; the resistance metallic plate 2B of the rectangle that also can be only cuts at first at the resistance metallic plate 2A from band shape; implement thickness measure determining the width of diaphragm 3A, 3B, and the width of described diaphragm 3A, 3B is applied to diaphragm 3A, the 3B of second later rectangle resistance metallic plate 2B formation cutting from the resistance metallic plate 2A of band shape.
As mentioned above, manufacture method according to the metallic plate low resistance chip resister of present embodiment, it is to use the manufacture method of chip resister of the resistance metallic plate 2B of rectangle, make chip resister 1 by implementing following operation successively: diaphragm forms operation (step S13), respectively at surperficial 2B-1 and the back side 2B-2 of resistance metallic plate 2B, Width at resistance metallic plate 2B forms a plurality of diaphragm 3A, 3B, and described diaphragm 3A, 3B extend at the length direction of resistance metallic plate 2B; Slit forms operation (step S14), by forming slit 6 at resistance metallic plate 2B, the shape of resistance metallic plate 2B is formed the shape with a plurality of strip portions 7 and connecting portion 8, described slit 6 is the diaphragm 3A of adjacency on described Width respectively, between the 3B and be positioned at the diaphragm 3A of described Width both sides, extend along the length direction of resistance metallic plate 2B in the outside of 3B, a plurality of strip portion 7 has than diaphragm 3A, the width that 3B is wideer also extends at the length direction of resistance metallic plate 2B, and connecting portion 8 connects the two ends of the length direction of described a plurality of strip portion 7 respectively; The electrode plated film forms operation (step S15), at not being formed with diaphragm 3A, 3B and exposing the both ends 2B-3 of the Width that the strip of resistance metallic plate 2B portion 7 is arranged, the surface of 2B-4, forms electrode plated film 4A, 4B; Strip portion cuts operation (step S16), cuts strip portion 7 from connecting portion 8; And strip portion cut-out operation (step S17), strip portion 7 is cut to a plurality of monolithics, be strip portion 7 prior to slit 6(therefore) formation diaphragm 3A, 3B.
Therefore; even when the width L3 of the resistance metallic plate 2B that for example requires chip resister 1 further miniaturization, strip portion 7 becomes narrower, also can not be subjected to the width L3 of the resistance metallic plate 2B of described strip portion 7 easily to form diaphragm 3A, 3B with influencing.That is, can easily utilize silk screen print method or photoetching process etc. to form diaphragm 3A, 3B.
In addition, can also enlarge the allowed band of adjustment of width (the diaphragm 3a of chip resister 1, the length of the 3b) L2 of diaphragm 3A, 3B.When reference Fig. 8 illustrates the size example of aforesaid chip resister 1; for example; when the length L 2 with diaphragm 3a, 3b is set at 0.9mm; at the longest 0.6mm(=2 of total length 2 * C of electrode plated film 4a, 4b * (0.2+0.1)) situation and the shortest 0.2mm(=2 * (0.2-0.1)) situation under, the total length L1 of chip resister 1 is respectively 1.5mm and 1.1mm.Therefore, the total length L1 that needs only chip resister 1 is set at as the shortest 1.5mm(=1.6-0.1 that allows size).When the length L 2 with diaphragm 3a, 3b was set at 1.2mm, under the situation of the longest 0.6mm and under the situation of the shortest 0.2mm, the total length L1 of chip resister 1 was respectively 1.8mm and 1.4mm at total length 2 * C of electrode plated film 4a, 4b.Therefore, as long as the total length L1 of chip resister 1 is set in the scope of 1.5～1.7mm.When the length L 2 with diaphragm 3a, 3b is set at 1.5mm, total length 2 * C of electrode plated film 4a, 4b the longest 0.6mm situation and under the situation of the shortest 0.2mm, the total length L1 of chip resister 1 is respectively 2.1mm and 1.7mm.Therefore, as long as the total length L1 of chip resister 1 is set in scope as the longest 1.7mm of permission size.Therefore, the adjustment allowed band of the length L 2 of diaphragm 3a, 3b is 0.6mm, greater than the 0.4mm(of the adjustment allowed band in the manufacture method in the past with reference to Figure 20).
In addition; manufacture method according to the metallic plate low resistance chip resister of present embodiment; form operation (step S13) at diaphragm and implement resistance metallic plate thickness measure operation (step S12) before, the thickness T of the position of the Width of the resistance metallic plate 2B of resistance metallic plate thickness measure operation measurement formation a plurality of diaphragm 3A, 3B 1, T 2, T 3, T 4, form in the operation (step S13) at diaphragm, according to the thickness T of the position of the Width of the described resistance metallic plate 2B that in resistance metallic plate thickness measure operation (step S12), measures 1, T 2, T 3, T 4, set the width L2 of described a plurality of diaphragm 3A, 3B respectively 1, L2 2, L2 3, L2 4, so the manufacture method of the metallic plate low resistance chip resister of present embodiment can also be adjusted the width (the diaphragm 3a of chip resister 1, the length of 3b) of diaphragm 3A, 3B according to the uneven thickness on the Width of resistance metallic plate 2B.Therefore, can reduce the inequality of the resistance value of the chip resister 1 that causes because of the uneven thickness on the Width of resistance metallic plate 2B.
In addition; in the manufacture method of described metallic plate low resistance chip resister; be not limited to cut from the resistance metallic plate 2A of band shape the resistance metallic plate 2B of rectangle; and form diaphragm 3A, 3B, slit 6(strip portion 7 at the resistance metallic plate 2B of described rectangle) and electrode plated film 4A, 4B, cut strip portion 7 then.That is, also can not cut the resistance metallic plate 2B of rectangle, but form diaphragm 3A, 3B, slit 6(strip portion 7 at the resistance metallic plate 2A of band shape) and electrode plated film 4A, 4B, cut strip portion 7 then.
With reference to Fig. 9～Figure 16, the manufacture method of the chip resister of another execution mode of the present invention is described.In addition, the structure of the metallic plate low resistance chip resister of making for the manufacture method of the chip resister by another execution mode owing to be illustrated with reference to Figure 16, is therefore omitted detailed description thereof at this.
In another embodiment; cut off operation (step S21), resistance metallic plate thickness measure operation (step S22), diaphragm formation operation (step S23), strip cut-out operation (step S24), electrode plated film formation operation (step S25), monolithic cut-out operation (step S26) by the ribbon resistance metallic plate shown in the process flow chart of implementing Fig. 9 successively, make the metallic plate low resistance chip resister 1 of structure shown in Figure 16.
Specifically, shown in Figure 10 (a), cut off in the operation (step S21) at the ribbon resistance metallic plate, utilize shearing devices such as laser, WEDM, cutting knife, the resistance metallic plate 12A of the band shape that will transport to arrow J1 direction by conveying device (omit diagram) is cutting off with the line of cut position shown in single-point line (imaginary line) K1.Banded resistance metallic plate 12A is made by materials such as FeCrAl system, CuNi system or CuMn systems, for reaching desirable thickness, the described material of slab state is passed through various operations, and make by carrying out annealing operation and rolling process repeatedly.
With the result that the resistance metallic plate 12A of band shape cuts off in described off-position, obtain the resistance metallic plate 12B of the rectangle shown in (b) of Figure 10.Shown in Figure 10 (a), the both sides at the Width of the resistance metallic plate 12A of band shape arrange telltale mark 15 with certain interval in the longitudinal direction.Described telltale mark 15 be positioned at the rectangle shown in Figure 10 (b) resistance metallic plate 12B length direction leading section and be positioned at the both sides of Width.In addition, be not limited thereto, telltale mark 15 can only be arranged on the one-sided of described Width, in addition, also can be located at the rearward end of length direction of resistance metallic plate 12B or central portion etc. and locate.
Shown in (a)～Figure 11 of Figure 11 (c); in ensuing resistance metallic plate thickness measure operation (step S22), measure by thickness of slab measurement mechanism (omit diagram) be used to form a plurality of (being exemplified as 7 among the figure) diaphragm 13A, 13B(and represent with imaginary line (single-point line)) the thickness T of position of Width (left and right directions of Figure 11 (b)) of resistance metallic plate 12B 1, T 2, T 3, T 4, T 5, T 6, T 7Be each position of the Width of the benchmark resistance metallic plate 12B that set to be used for measures described thickness of slab with telltale mark 15.
In addition, in illustrative example, at each diaphragm 13A, 13B, set the position that thickness of slab is measured at a place respectively in each position of the Width of the resistance metallic plate 12B that be used for to measure thickness of slab, but be not limited thereto.For example; can be respectively at each diaphragm 13A, 13B; each position at the Width of the resistance metallic plate 12B that be used for to measure thickness of slab is set the position that thickness of slab is measured in many places respectively; and the average thickness value of the resistance metallic plate 12B that will measure at described a plurality of positions, as the thickness T of the position of the Width of resistance metallic plate 12B 1, T 2, T 3, T 4, T 5, T 6, T 7
Shown in (a)～Figure 12 of Figure 12 (c); form in the operation (step S23) at ensuing diaphragm; utilize silk screen print method or photoetching process etc., form a plurality of (being exemplified as 7 among the figure) diaphragm 13A, 13B respectively at surperficial 12B-1 and the back side 12B-2 of resistance metallic plate 12B.Described diaphragm 13A, 13B extend and are parallel to each other at the Width of resistance metallic plate 12B at the length direction of resistance metallic plate 12B.In addition, be that benchmark is set the position that forms diaphragm 13A, 13B with telltale mark 15.
In addition, in this diaphragm forms operation, according to the thickness T of the position of the Width of the resistance metallic plate 12B that in aforesaid resistance metallic plate thickness measure operation (step S22), measures 1, T 2, T 3, T 4, T 5, T 6, T 7, set a plurality of diaphragm 13A, 13B width (being the diaphragm 3a of chip resister 1, the length of 3b) L2 separately 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7Specifically, according to following formula (4), calculate the width L2 of each diaphragm 13A, 13B 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7Formula (4) is to obtain by the distortion with formula (3).
[mathematical expression 2]
R = ρ L 2 n W · T n , ( n = 1,2,3,4,5,6,7 ) . . . ( 3 )
L 2 n = R · W · T n ρ , ( n = 1,2,3,4,5,6,7 ) . . . ( 4 )
In formula (3), formula (4); R represents the resistance value (target resistance values) of chip resister 1; L2 represents the length (being the protected film 3a of resistance metallic plate 2, the length of 3b cover part) of diaphragm 3a, the 3b of chip resister 1; W represents the width (desired value) (being the width of resistance metallic plate 2) of chip resister 1, T nThe thickness of expression resistance metallic plate 2, ρ represents the specific insulation of resistance metallic plate 2.That is, the resistance value R of chip resister 1 is by protected film 3a, the width W of 3b cover part, length L 2, the thickness T of resistance metallic plate 2 n(L2/(W * T n)) and the specific insulation ρ of resistance metallic plate 2 determine.
Because resistance value R(target resistance values), to cut off width W (desired value) and the specific insulation ρ that operation (step 26) determines by monolithic be known, and thickness T n(be the thickness T of position of the Width of resistance metallic plate 12B 1, T 2, T 3, T 4, T 5, T 6, T 7) also to measure the back in aforesaid resistance metallic plate thickness measure operation (step S22) be known, so can use described value and according to described formula (4), calculates the thickness T with the position of the Width of resistance metallic plate 12B 1, T 2, T 3, T 4, T 5, T 6, T 7Width (being the diaphragm 3a on the chip resister 1, the length of 3b) L2 corresponding, each diaphragm 13A, 13B 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7
Calculate the width L2 of each diaphragm 13A, 13B 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7After; set the silk-screen patterns corresponding with described calculated value; and based on described silk-screen patterns enforcement silk screen print method; surperficial 12B-1 and back side 12B-2 printing epoxy at resistance metallic plate 12B is the slurry of resin thus; and by the slurry after the described silk screen printing is carried out sintering, form each diaphragm 13A, 13B.Certainly, when using photoetching process etc., also set the width L2 with each diaphragm 13A, 13B 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7The pattern of calculated value correspondence, and form each diaphragm 13A, 13B.
Shown in (a)～Figure 13 of Figure 13 (b), cut off in the operation (step S24) at ensuing strip, by utilizing shearing devices such as laser, WEDM, cutting knife that resistance metallic plate 12B is cut off at the off-position M1 shown in the single-point line (imaginary line), cut a plurality of (being exemplified as 7 among the figure) strip portion 17.Figure 13 (b) amplifies one that has represented from a plurality of strip portion 17 that resistance metallic plate 12B cuts, and (c) of Figure 13 amplifies the cross section of having represented this strip portion 17.(b) of Figure 13 represented the length L 3 of resistance metallic plate 2 of width L3(chip resister 1 of the resistance metallic plate 12B of strip portion 17) and the width L2(chip resister 1 of diaphragm 13A, the 13B of strip portion 17 in the length L 2 of diaphragm 3a, 3b).
Shown in Figure 13 (a); off-position (line of cut) M1 extends at the length direction (above-below direction of Figure 12 (b)) of resistance metallic plate 12B, and is set in the diaphragm 3A of the last adjacency of Width (left and right directions of Figure 12 (b)) of resistance metallic plate 12B; (be the diaphragm 13A of surperficial 12B-1 side between the 3B; between the 13A and the diaphragm 13B of back side 12B-2 side; between the 13B) and the diaphragm 13A that is positioned at the Width both sides of resistance metallic plate 12B; the outside of 13B (being the outside of diaphragm 13B of the Width both sides of the outside of diaphragm 13A of Width both sides of surperficial 12B-1 side and back side 12B-2 side).Be that benchmark is set described off-position (line of cut) M1 with telltale mark 15, make the width L3 of resistance metallic plate 12B of strip portion 17 become setting.In addition, cut-out width by shearing devices such as suitable adjustment laser, WEDM, cutting knifes (i.e. the width of off-position (line of cut) M1 that is determined by the width of laser beam, the thickness of line, the thickness of cutoff edge etc.) also can be adjusted the width L3 of the resistance metallic plate 12B of strip portion 17.
Shown in Figure 13 (b), Figure 13 (c) and Figure 14 (a), Figure 14 (b); form in the operation (step S25) at ensuing electrode plated film; for strip portion 17; the both ends 12B-3 of the Width (left and right directions of Figure 13 (b)) of the resistance metallic plate 12B that exposes at not forming diaphragm 13A, 13B, the surface of 12B-4 form electrode plated film 14A, 14B by galvanoplastic.In addition, do not form the both ends of length direction of the strip portion 17 of diaphragm 13A, 13B this moment, forms plated film 14C, 14D yet.As electrode plated film 14A, 14B, form for example nickel plated film and tin plated film.In addition, electrode plated film 14A, 14B also can be by impacting the plated film that nickel plating, copper facing, nickel plating, tin-plated coating film form successively.
Shown in Figure 15 (a), cut off in the operation (step S26) at ensuing monolithic, utilize shearing devices such as laser, WEDM, cutting knife that strip portion 17 is being cut to a plurality of (being 12 in illustrated embodiment) monolithic with the off-position N1 shown in the single-point line (imaginary line).Like this, produce the metallic plate low resistance chip resister 1 shown in (b) of Figure 15.Namely; by strip portion 17 is cut to a plurality of monolithics; from resistance metallic plate 12B, diaphragm 13A, 13B and electrode plated film 14A, the 14B of strip portion 17, form resistance metallic plate 2, diaphragm 3a, 3b and electrode plated film 4a, the 4b of chip resister 1 respectively.
Corresponding relation about the size of the size of strip portion 17 and chip resister 1; the resistance metallic plate 12B of strip portion 17 and electrode plated film 14B; the width L1 of 14B is equivalent to the total length L1 of chip resister 1; the electrode plated film 14A of strip portion 17; the width C of 14B is equivalent to electrode plated film 4a in the chip resister 1; the length C of 4b; the diaphragm 13A of strip portion 17; the width L2 of 13B is equivalent to the diaphragm 3a of chip resister 1; the length L 2 of 3b, the width L3 of the resistance metallic plate 12B of strip portion 17 is equivalent to the length L 3 of the resistance metallic plate 2 of chip resister 1.
In addition, any one of the resistance metallic plate 12B of the rectangle that cuts successively at the resistance metallic plate 12A from band shape implemented the described manufacturing process that comprises the chip resister of resistance metallic plate thickness measure operation.This be because, on the length direction of the resistance metallic plate 12A of band shape, also can produce uneven thickness sometimes, the uneven thickness of each resistance metallic plate 12B this moment on Width is different.In addition; when not having uneven thickness substantially on the length direction of the resistance metallic plate 12A of band shape; the resistance metallic plate 12B of the rectangle that also can be only cuts at first at the resistance metallic plate 12A from band shape implements thickness measure and determines the width of diaphragm 13A, 13B, and the width of described diaphragm 13A, 13B is applied to diaphragm 13A, the 13B of the resistance metallic plate 12B formation of second later rectangle cutting from the resistance metallic plate 12A of band shape.
As mentioned above, in the manufacture method of the metallic plate low resistance chip resister of another execution mode, also can obtain the effect identical with the manufacture method of the metallic plate low resistance chip resister of described execution mode.
Namely, manufacture method according to the metallic plate low resistance chip resister of another execution mode of the present invention, it is to use the manufacture method of chip resister 1 of the resistance metallic plate 12B of rectangle, make chip resister 1 by implementing following operation successively: diaphragm forms operation (step S23), respectively at surperficial 12B-1 and the back side 12B-2 of resistance metallic plate 12B, Width at resistance metallic plate 12B forms a plurality of diaphragm 13A, 13B, and a plurality of diaphragm 13A, 13B extend at the length direction of resistance metallic plate 12; Strip cuts off operation (step S24), by cut off resistance metallic plate 12B at off-position M1 place, cut and have than the wideer width of diaphragm 13A, 13B and a plurality of strip portion 17 of extending at the length direction of resistance metallic plate 12B, off-position M1 respectively between diaphragm 13A, the 13B of adjacency on the described Width and the outside that is positioned at diaphragm 13A, the 13B of described Width both sides extend along the length direction of resistance metallic plate 12B; The electrode plated film forms operation (step S25), at not being formed with diaphragm 13A, 13B and exposing the both ends 12B-3 that Width resistance metallic plate 12B, strip portion 17 is arranged, the surface of 12B-4, forms electrode plated film 14A, 14B; And monolithic cut-out operation (step S26), strip portion 17 is cut to a plurality of monolithics, therefore form diaphragm 13A, 13B prior to cutting strip portion 17.
Therefore; even when the width L3 of the resistance metallic plate 12B that for example requires chip resister 1 further miniaturization, strip portion 17 becomes narrower, also can not be subjected to the influence ground of width L3 of the resistance metallic plate 12B of described strip portion 17 easily to form diaphragm 13A, 13B.That is, can easily form diaphragm 13A, 13B by silk screen print method or photoetching process etc.
In addition, can also enlarge the allowed band (with reference to Fig. 8) of adjustment of width (the diaphragm 3a of chip resister 1, the length of the 3b) L2 of diaphragm 13A, 13B.
In addition; manufacture method according to the metallic plate low resistance chip resister of another execution mode of the present invention; implement resistance metallic plate thickness measure operation (step S22) before owing to form operation (step S23) at diaphragm, the thickness T of the position of the Width of the resistance metallic plate 12B of measurement formation a plurality of diaphragm 13A, 13B in resistance metallic plate thickness measure operation 1, T 2, T 3, T 4, T 5, T 6, T 7, form in the operation (step S23) at diaphragm, according to the thickness T of the position of the Width of the resistance metallic plate 12B that in resistance metallic plate thickness measure operation (step S22), measures 1, T 2, T 3, T 4, T 5, T 6, T 7, set the width L2 of a plurality of diaphragm 13A, 13B respectively 1, L2 2, L2 3, L2 4, L2 5, L2 6, L2 7Therefore, can also adjust the width (the diaphragm 3a of chip resister 1, the length of 3b) of diaphragm 13A, 13B according to the uneven thickness of the Width of resistance metallic plate 12B.Therefore, can reduce the inequality of the resistance value of the chip resister 1 that the uneven thickness because of the Width of resistance metallic plate 12B brings.
In addition; in the manufacture method of described metallic plate low resistance chip resister, cut the resistance metallic plate 12B of rectangle from the resistance metallic plate 12A of band shape, and form diaphragm 13A, 13B at the resistance metallic plate 12B of described rectangle; cut strip portion 17 then, but be not limited thereto.That is, also can not cut the resistance metallic plate 12B of rectangle, after the resistance metallic plate 12A at band shape forms diaphragm 13A, 13B, cut strip portion 17.
Industrial applicibility
The present invention relates to use the manufacture method of the chip resister of resistance metallic plate, be particularly suitable for the very narrow situation of width of the resistance metallic plate of the strip portion in the manufacture process of chip resister.
Description of reference numerals
1 metallic plate low resistance chip resister, 2 resistance metallic plates, the resistance metallic plate of 2A band shape; the resistance metallic plate of 2B rectangle, 2B-1 surface, the 2B-2 back side; 2B-3; the 2B-4 end, 2B-5 side, 2a surface; 2a-1; the 2a-2 end, the 2b back side, 2b-1; the 2b-2 end; 2c; the 2d end face, 2e; the 2f end, 3a; the 3b diaphragm; 3A; the 3B diaphragm, 4a; 4b electrode plated film, 4A; 4B electrode plated film; the 4C plated film, 5 telltale marks, 6 slits; 7 strip portions, 8 connecting portions, the resistance metallic plate of 12A band shape; the resistance metallic plate of 12B rectangle; the 12B-1 surface, the 12B-2 back side, 12B-3; the 12B-4 end; 14A; 14B electrode plated film; 14C; the 14D plated film, 15 telltale marks, 17 strip portions.

Claims (4)

1. the manufacture method of a metallic plate low resistance chip resister is characterized in that, uses rectangle or banded resistance metallic plate, makes described chip resister by implementing following operation successively:
Diaphragm forms operation, and at surface and the back side of described resistance metallic plate, at a plurality of diaphragms of Width formation of described resistance metallic plate, described diaphragm extends at the length direction of described resistance metallic plate respectively;
Slit forms operation, by forming slit at described resistance metallic plate, the shape of described resistance metallic plate is formed the shape with a plurality of strip portions and connecting portion, described slit between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate, described a plurality of strip portion has than the wideer width of described diaphragm and at the length direction of described resistance metallic plate extends, and described connecting portion connects the two ends of the length direction of described a plurality of strip portion respectively;
The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film;
Strip portion cuts operation, cuts described strip portion from described connecting portion; And
Strip portion cuts off operation, and described strip portion is cut into a plurality of monolithics.
2. the manufacture method of metallic plate low resistance chip resister according to claim 1 is characterized in that,
Before forming operation, implements described diaphragm resistance metallic plate thickness measure operation, the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation,
Form in the operation at described diaphragm, according to the thickness of each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures, set the width of described a plurality of diaphragms respectively.
3. the manufacture method of a metallic plate low resistance chip resister is characterized in that, uses rectangle or banded resistance metallic plate, makes described chip resister by implementing following operation successively:
Diaphragm forms operation, and at surface and the back side of described resistance metallic plate, at a plurality of diaphragms of Width formation of described resistance metallic plate, described diaphragm extends at the length direction of described resistance metallic plate respectively;
Strip cuts off operation, by cut off described resistance metallic plate in off-position, cut and have than the wideer width of described diaphragm and a plurality of strip portion of extending at the length direction of described resistance metallic plate, described off-position between the described diaphragm of adjacency on the described Width and the outside that is positioned at the described diaphragm of described Width both sides extend along the length direction of described resistance metallic plate;
The electrode plated film forms operation, at not being formed with described diaphragm and exposing the surface at the both ends of the Width that the described strip of described resistance metallic plate portion is arranged, forms the electrode plated film; And
Monolithic cuts off operation, and described strip portion is cut into a plurality of monolithics.
4. the manufacture method of metallic plate low resistance chip resister according to claim 3 is characterized in that,
Before forming operation, implements described diaphragm resistance metallic plate thickness measure operation, the thickness of each position of the Width of the described resistance metallic plate of the described a plurality of diaphragms of measurement formation in described resistance metallic plate thickness measure operation,
Form in the operation at described diaphragm, according to the thickness of each position of the Width of the described resistance metallic plate that in described resistance metallic plate thickness measure operation, measures, set the width of described a plurality of diaphragms respectively.
CN201180045471.9A 2010-09-21 2011-06-29 The manufacture method of metal plate low-resistance chip resistor Active CN103201801B (en)

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JPPCT/JP2010/066313 2010-09-21
PCT/JP2010/066313 WO2012039020A1 (en) 2010-09-21 2010-09-21 Method for producing metal plate low-resistance chip resistor
PCT/JP2011/064966 WO2012039175A1 (en) 2010-09-21 2011-06-29 Method for producing metal plate low-resistance chip resistor

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CN103400674A (en) * 2013-07-31 2013-11-20 南京萨特科技发展有限公司 Manufacturing method for ultrathin alloy plate sensitive resistor
US20220013261A1 (en) * 2020-07-07 2022-01-13 Ralec Electronic Corporation Method for mass-manufacturing of miniature resistor

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JP2007049070A (en) * 2005-08-12 2007-02-22 Rohm Co Ltd Method of manufacturing chip resistor
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CN1433030A (en) * 2002-01-14 2003-07-30 陈富强 Metal sheet type resistor making process and structure
CN1524274A (en) * 2002-06-19 2004-08-25 罗姆股份有限公司 Chip resistor having low resistance and its manufacturing method
JP2007049070A (en) * 2005-08-12 2007-02-22 Rohm Co Ltd Method of manufacturing chip resistor
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* Cited by examiner, † Cited by third party
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CN103400674A (en) * 2013-07-31 2013-11-20 南京萨特科技发展有限公司 Manufacturing method for ultrathin alloy plate sensitive resistor
CN103400674B (en) * 2013-07-31 2016-06-29 南京萨特科技发展有限公司 The manufacture method of ultrathin alloy plate sensitive resistor
US20220013261A1 (en) * 2020-07-07 2022-01-13 Ralec Electronic Corporation Method for mass-manufacturing of miniature resistor

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JPWO2012039175A1 (en) 2014-02-03
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TWI433170B (en) 2014-04-01
KR20130073951A (en) 2013-07-03

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