CN103182750B

CN103182750B - Method for processing reference surface by adopting linear cutting of gallium arsenide monocrystal

Info

Publication number: CN103182750B
Application number: CN201110452091.9A
Authority: CN
Inventors: 李超; 林泉; 郑安生; 龙彪
Original assignee: YOUYAN PHOTOELECTRIC NEW MATERIAL CO Ltd
Current assignee: GRINM GUOJING ADVANCED MATERIALS Co.,Ltd.
Priority date: 2011-12-29
Filing date: 2011-12-29
Publication date: 2015-03-25
Anticipated expiration: 2031-12-29
Also published as: CN103182750A

Abstract

The invention discloses a method for processing a reference surface by adopting the linear cutting of a gallium arsenide monocrystal, which comprises the steps: 1, using an X-ray diffraction orientation device to orient the crystal to set a crystal surface (100); 2, using an inside diameter slicer to cut a small surface in the direction (100), fixing the crystal on a clamping apparatus, adjusting an included angle between the crystal and a blade to be 45 degrees, and starting the slicer to cut the surface (100) to be used as the reference surface of a fixed cutting edge; 3, surveying and drawing a surface (110) which forms a 90-degree included angle with the small surface in the direction (100) with a T-square on the surface of the crystal, and marking a reference line with a marking pen; 4, fixing the crystal on the clamping apparatus of a diamond band saw edge cutting machine, starting a laser tool setting function, adjusting the path of the simulated cutting edge to enable the laser to be aligned with the reference line, and starting a band saw blade to adjust the feeding speed for completing the edge cutting; and 5, observing whether the surface is smooth or not after the completion of edge cutting, and carrying out fine grinding for correction. With the method, the levelness of the joint of the crystal and a graphite piece is effectively ensured, the crystal orientation accuracy of slicers is improved, and meanwhile, processing efficiency is greatly improved by being compared with that of manual grinding.

Description

A kind of processing method of arsenide gallium monocrystal Linear cut datum level

Technical field

The present invention relates to a kind of processing method of arsenide gallium monocrystal Linear cut datum level.

Background technology

GaAs (GaAs) is the semi-conducting material with characteristics such as electron mobility are high, forbidden band is wide, direct band gap, consumed power are low, is widely used in the fields such as communication, microelectronics, photoelectron.The slicing process of arsenide gallium monocrystal is the key link of following process, usually two kinds of modes are had at present, be respectively inner circle cutting and Linear cut, Linear cut compares inner circle cutter has damage layer thickness little, spillage of material is few, multi-disc cutting efficiency advantages of higher, especially occupies greater advantage, is widely used gradually at present in the cutting processing of major diameter LED reverse mounting type.

The arsenide gallium monocrystal appearance and size that horizontal Bridgman method (HB method) grows is irregular, be similar to " boat " type, if be directly installed on the jig of Linear cut, because crystal on side face flatness is poor, to bond difficulty with the graphite piece of rule, be difficult to accurately location, the crystal orientation error amount of the wafer cut out finally can be caused bigger than normal.

The processing method in the past usually adopted polishes for manual, staff's both hands are by buttressing crystal, crystal is placed on glass plate, lapping liquid is configured with diamantane abrasive micropowder and pure water, crystal is walked " eight " word path, polish, the <111> arsenide gallium monocrystal of current HB method growth, diameter is 2.5 inches, monocrystalline length is roughly at 450-500mm, weight is at 6-7kg, the labour intensity polished by hand is larger, production efficiency is very low, the datum level ground is also lack of standardization, can not ensure that datum level is strict <110> direction crystal face, crystal orientation can be departed from.

Summary of the invention

The object of the present invention is to provide a kind of processing method of arsenide gallium monocrystal Linear cut datum level, adopt band-saw diamond edge severing machine to carry out cut edge to crystal on side face, prepare Linear cut position reference face, improve the degree of accuracy in wafer crystal orientation, enhance productivity.

For achieving the above object, the present invention is by the following technical solutions:

A processing method for arsenide gallium monocrystal Linear cut datum level, the method comprises the following steps:

(1) monocrystalline is directed: use X-ray diffraction direction finder to carry out orientation to crystal, make <100> crystal face;

(2) datum level of edge severing machine horizontal direction (x) is cut: use inside diameter slicer to cut little of <100> direction, crystal is fixed on the jig of inside diameter slicer, adjustment crystal and blade angle at 45 °, open slicer and cut <100> face, as fixing cut edge datum level;

(3) <110> cut surface is surveyed and drawn: survey and draw out the <110> face with little the angle in 90 ° in <100> direction at plane of crystal T-square, and by marking pen token-based directrix;

(4) cut edge: be fixed on by crystal on the jig of band-saw diamond edge severing machine, opens laser tool setting function, and adjustment simulation cut edge path, makes laser alignment datum line, starts bands for band and regulates feed speed, complete cut edge;

(5) surface grinding: after cut edge terminates, whether flat smooth carries out fine grinding correction to observe surface.

The band-saw diamond edge severing machine that the present invention adopts, its band saw motion mode is reciprocating, and x, y-axis mobile platform are by bilinear guide supporting, and precision lead screw, driving stepper motor, circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin ^-1~ 2mmin ^-1between can fine adjustment cut edge speed; Two Dimensional Rotating jig y-axis mobile platform is equipped with, horizontal direction and vertical direction are all adjustable, jig adopts motor drive and rotary handle is housed, point cantact between saw blade and crystal can be realized cut, cutting resistance does not change with cutting depth change, makes cut edge surface smoothness and the depth of parallelism all reach requirement.

The band-saw diamond matrix of this band-saw diamond edge severing machine is stainless steel material, and matrix surface electroplates 100 order diamond dust, and diamond dust width is 1 ± 0.2mm.

The invention has the advantages that:

The present invention, in the technical process with wire cutting method processing gallium arsenide wafer, introduces a kind of new technical process-cut edge, replaces craft in the past to polish.Get <110> direction in the side of the <111> arsenide gallium monocrystal of Using Horizontal Bridgman Method growth, cut out a complete smooth plane with edge severing machine from the head of monocrystalline to afterbody.The method effectively can ensure the flatness of crystal and graphite piece junction, improves the accuracy in section crystal orientation, and in working (machining) efficiency, relatively manual polishing also has a very significant increase simultaneously.

Accompanying drawing explanation

Fig. 1 is process flow diagram of the present invention;

Fig. 2 is the fundamental diagram of the band-saw diamond edge severing machine that the present invention adopts.

Detailed description of the invention

The present invention will be further described by the following examples.

Be illustrated in figure 1 process flow diagram of the present invention, the fundamental diagram of the band-saw diamond edge severing machine that the present invention adopts as shown in Figure 2, bands for band 6 is supported by its tensioning support wheel 1,2, during cutting, crystal 4 is fixed by the jig on y-axis mobile platform 5, and the position that bands for band 6 contacts with crystal 4 is provided with two spacing guide wheels 3.The band saw motion mode of this band-saw diamond edge severing machine is reciprocating, and x-axis mobile platform 7 and y-axis mobile platform 5 are by bilinear guide supporting, and precision lead screw, driving stepper motor, circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin ^-1~ 2mmin ^-1between can fine adjustment cut edge speed, Two Dimensional Rotating jig y-axis mobile platform 5 is equipped with, horizontal direction and vertical direction are all adjustable, jig adopts motor drive and rotary handle is housed, point cantact between saw blade and crystal can be realized cut, cutting resistance does not change with cutting depth change, makes cut edge surface smoothness and the depth of parallelism all reach requirement.

In following examples, diamond band saw blade selects TD-700 type bands for band, and appearance and size is (2730 × 8) mm, and saw blade matrix selects Germany to produce stainless steel material, and electroplate 100 order diamond dust, diamond dust width is 1 ± 0.2mm.

Embodiment 1

The present embodiment selects the <111> arsenide gallium monocrystal with the growth of HB method, and carry out the processing of single crystal wire cutting datum level, specific process is:

(1) use X-ray diffraction direction finder to carry out orientation to crystal, make <100> crystal face.The x-ray diffraction angle (θ angle) of adjustment GaAs <100> crystal face is 33 ° 03 ' 15 "; reset back to zero; pay special attention to baffle plate to be aligned to 2 θ Angle Position; crystal is placed on the centre position of ray path; and compress with compressing tablet; rotary handle demonstrates peak-peak, the positive and negative higher limit in recording level direction, turn 180 ° counterclockwise and repeat aforesaid operations, the positive and negative lower limit in recording level direction, brings formula into: horizontal direction: θ 1=[± higher limit-(± lower limit)]/2.Then be rotated counterclockwise 90 °, determine the positive and negative higher limit of vertical direction, be again rotated counterclockwise 180 °, determine that the positive and negative lower limit of vertical direction brings formula into: vertical direction: θ 2=[± higher limit-(± lower limit)]/2;

(2) inside diameter slicer is used to cut little of <100> direction, crystal is fixed on the jig of inside diameter slicer, adjustment crystal and blade angle at 45 °, open slicer and cut <100> face, as fixing cut edge benchmark;

(3) the <110> face with little the angle in 90 ° in <100> direction is surveyed and drawn out at plane of crystal T-square, and by marking pen token-based directrix;

(4) be fixed on the jig of edge severing machine by crystal, open laser tool setting function, adjustment simulation cut edge path, makes laser alignment datum line, starts bands for band and regulates feed speed, complete cut edge;

(5) after cut edge terminates, observe surface whether flat smooth, if there is the defects such as ripple, use 1000# diamantane abrasive micropowder to carry out fine grinding correction.

Claims

1. a processing method for arsenide gallium monocrystal Linear cut datum level, is characterized in that, the method comprises the following steps:

(2) datum level of edge severing machine horizontal direction is cut: use inside diameter slicer to cut little of <100> direction, crystal is fixed on the jig of inside diameter slicer, adjustment crystal and blade angle at 45 °, open slicer and cut <100> face, as fixing cut edge datum level;

(4) cut edge: be fixed on by crystal on the jig of band-saw diamond edge severing machine, opens laser tool setting function, and adjustment simulation cut edge path, makes laser alignment datum line, starts bands for band and regulates feed speed, complete cut edge; Wherein, the band saw motion mode of described band-saw diamond edge severing machine is reciprocating, and x, y-axis mobile platform are by bilinear guide supporting, and precision lead screw, driving stepper motor, circuit Single-chip Controlling, feed speed can step-less adjustment, at 0.5mmin ^-1~ 2mmin ^-1between can fine adjustment cut edge speed; Y-axis mobile platform is equipped with Two Dimensional Rotating jig, horizontal direction and vertical direction are all adjustable, and jig adopts motor drive and rotary handle is housed, and can realize point cantact between saw blade and crystal and cut, cutting resistance does not change with cutting depth change;

2. the processing method of arsenide gallium monocrystal Linear cut datum level according to claim 1, it is characterized in that, the band-saw diamond matrix of described band-saw diamond edge severing machine is stainless steel material, and matrix surface electroplates 100 order diamond dust, and diamond dust width is 1 ± 0.2mm.