CN103182749A - Cutting method for sheet-type polycrystalline materials - Google Patents
Cutting method for sheet-type polycrystalline materials Download PDFInfo
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- CN103182749A CN103182749A CN2011104499316A CN201110449931A CN103182749A CN 103182749 A CN103182749 A CN 103182749A CN 2011104499316 A CN2011104499316 A CN 2011104499316A CN 201110449931 A CN201110449931 A CN 201110449931A CN 103182749 A CN103182749 A CN 103182749A
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- polycrystalline materials
- polycrystalline
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Abstract
The invention provides a cutting method for sheet-type polycrystalline materials, comprising the steps of (1) modifying a clamp of the existing single line diamond sand wire cutting machine to enable a positioning face of the clamp to be parallel with a sand wire cutting face; (2) finishing-grinding a deposit face of the polycrystalline materials to enable the evenness of the crystal face to be smaller than 0.02mm; (3) fixing the finish-grinded polycrystalline materials onto the clamp and setting the zero point after location; and (4) setting the cutting thickness and the cutting number and then cutting. According to the invention, the existing precise single line diamond sand wire cutting machine is adopted, and the procedures of aligning and lifting a cutter are saved and the production efficiency are improved by improving the arranging and clamping modes and the machining process. The method well completing the precise cutting of the polycrystalline materials has the processing thickness precision of +/-0.05/200mm and meets the use needs, and the cost is reduced by at least 10%, so the use ratio of the sheet-type polycrystalline materials is greatly improved.
Description
Technical field
The present invention relates to a kind of cutting method of lamellar polycrystalline material, adopt the polycrystalline material that single line cutting machine cutting tailing is not recyclable, material is valuable, belong to inorganic block materials processing technique field.
Background technology
The polycrystalline ZnSe material of chemical vapour deposition technique (CVD method) growth, polycrystalline ZnS material be as advanced person's infrared optical material and high power laser material, be the cost height, yield poorly, the material that supply falls short of demand, be generally lamellar.The polycrystalline ZnSe material of present domestic CVD method growth, the thickness of polycrystalline ZnS material are generally at 10～20mm, and therefore a large amount of components and parts need be cut polycrystalline ZnSe material, the polycrystalline ZnS material of CVD method growth with the general 3～8mm that only needs of dimensional thickness.Conventional at present cutting method is that tool setting is made as zero point after playing the cutter cutting to cutting material earlier, sets cutting thickness then, piecemeal cutting.The remaining tailing material thicker with respect to thickness of the waste material that tool setting produces and cutting back, proportion is also not very big.And ratio is quite big for laminal polycrystalline ZnSe material, polycrystalline ZnS material, therefore meaningless increase cost.And the cost of material of the polycrystalline ZnSe material of CVD method growth, polycrystalline ZnS material is than higher, and production efficiency is lower, and therefore how how accurately the thickness that needs of cutting reduce the tail waste material, and enhancing productivity is problem to be solved in processing.
Summary of the invention
The object of the present invention is to provide a kind of cutting method of lamellar polycrystalline material, to reduce the generation of tail waste material, improve the utilization rate of polycrystalline material.
For achieving the above object, the present invention is by the following technical solutions:
A kind of cutting method of lamellar polycrystalline material, method comprises:
(1) at first the jig of existing single line boart boart wire cutting machine is transformed, made the locating surface of jig parallel with sand line cut surface;
(2) deposition surface to polycrystalline material finish grindes, and makes the plane of crystal flatness less than 0.02mm;
(3) will finish grind good polycrystalline material and be fixed on the jig, zero point is set in the back, location;
(4) set cutting thickness and sheet number, cut.
In above-mentioned cutting method, the depth of parallelism control between the locating surface of described jig and the sand line cut surface is 0.02/300.
Cutting method of the present invention is applicable to the lamellar polycrystalline ZnS material of cutting or polycrystalline ZnS material.
The invention has the advantages that:
The present invention adopts existing accurate single line boart boart wire cutting machine, by transformation be installed mode, processing technology step, has saved tool setting and has played one step of cutter operation, has improved production efficiency.Method of the present invention can be finished the precision cutting of polycrystalline material well, and the thickness machining accuracy can reach ± 0.05mm/200mm, satisfies instructions for use, and cost reduces 10% at least, has improved the utilization rate of lamellar polycrystalline material greatly.
The specific embodiment
The present invention will be further described by the following examples.
Embodiment 1
Adopt existing accurate single line boart boart wire cutting machine, make the jig locating surface parallel with sand line cut surface (being the Z axle), the depth of parallelism between the two is controlled 0.02/300.Then the lamellar polycrystalline ZnSe material of CVD method growth or the deposition surface of polycrystalline ZnS material are finish grinded, make the plane of crystal flatness less than 0.02mm, fineness is about 12.8um.To finish grind good polycrystalline ZnSe material or polycrystalline ZnS material again and be fixed on the off-the-shelf jig, zero point is set in the back, location.Set cutting thickness at last and the sheet number cuts automatically.The thickness machining accuracy of this polycrystalline material is ± 0.05mm/200mm that the existing relatively method of cost has reduced 10%.
Claims (3)
1. the cutting method of a lamellar polycrystalline material is characterized in that, this cutting method may further comprise the steps:
(1) at first the jig of existing single line boart boart wire cutting machine is transformed, made the locating surface of jig parallel with sand line cut surface;
(2) deposition surface to polycrystalline material finish grindes, and makes the plane of crystal flatness less than 0.02mm;
(3) will finish grind good polycrystalline material and be fixed on the jig, zero point is set in the back, location;
(4) set cutting thickness and sheet number, cut.
2. cutting method according to claim 1 is characterized in that, the depth of parallelism between the locating surface of described jig and the sand line cut surface is 0.02/300.
3. cutting method according to claim 1 is characterized in that, described polycrystalline material is lamellar polycrystalline ZnSe material or polycrystalline ZnS material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104499316A CN103182749A (en) | 2011-12-29 | 2011-12-29 | Cutting method for sheet-type polycrystalline materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011104499316A CN103182749A (en) | 2011-12-29 | 2011-12-29 | Cutting method for sheet-type polycrystalline materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103182749A true CN103182749A (en) | 2013-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011104499316A Pending CN103182749A (en) | 2011-12-29 | 2011-12-29 | Cutting method for sheet-type polycrystalline materials |
Country Status (1)
| Country | Link |
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| CN (1) | CN103182749A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010017130A1 (en) * | 2000-01-26 | 2001-08-30 | Hitoshi Ohmori | Apparatus and method for cutting ingots |
| JP2001246617A (en) * | 2000-03-07 | 2001-09-11 | Canon Inc | Method and device for cutting crystal |
| US20070251516A1 (en) * | 2006-04-28 | 2007-11-01 | Nieber Albert R | Precision slicing of large work pieces |
| CN102049818A (en) * | 2009-10-28 | 2011-05-11 | 上海日进机床有限公司 | Cutting method for crystalline silicon ingot |
| CN102285011A (en) * | 2011-08-07 | 2011-12-21 | 江西金葵能源科技有限公司 | Method for cutting solar-grade polycrystalline silicon sheets by using diamond wires |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
-
2011
- 2011-12-29 CN CN2011104499316A patent/CN103182749A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010017130A1 (en) * | 2000-01-26 | 2001-08-30 | Hitoshi Ohmori | Apparatus and method for cutting ingots |
| JP2001246617A (en) * | 2000-03-07 | 2001-09-11 | Canon Inc | Method and device for cutting crystal |
| US20070251516A1 (en) * | 2006-04-28 | 2007-11-01 | Nieber Albert R | Precision slicing of large work pieces |
| CN102049818A (en) * | 2009-10-28 | 2011-05-11 | 上海日进机床有限公司 | Cutting method for crystalline silicon ingot |
| CN102285011A (en) * | 2011-08-07 | 2011-12-21 | 江西金葵能源科技有限公司 | Method for cutting solar-grade polycrystalline silicon sheets by using diamond wires |
| CN102294757A (en) * | 2011-08-08 | 2011-12-28 | 江西金葵能源科技有限公司 | Method for splicing short mono-crystal rods cut by using diamond wire |
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Owner name: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130929 Free format text: FORMER OWNER: YOUYAN OPTOELECTRONIC NEW MATERIAL CO., LTD. Effective date: 20130929 |
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Effective date of registration: 20130929 Address after: 065001 hi tech Development Zone, Hebei, Langfang Applicant after: Youyan Photoelectric New Material Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: General Research Institute for Nonferrous Metals Applicant before: Youyan Photoelectric New Material Co.,Ltd. |
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Application publication date: 20130703 |