CN103178211A - Organic solar cell with MoO3/MoS2 composite film as anodic interface layer and production method of organic solar cell - Google Patents

Organic solar cell with MoO3/MoS2 composite film as anodic interface layer and production method of organic solar cell Download PDF

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CN103178211A
CN103178211A CN2013101078348A CN201310107834A CN103178211A CN 103178211 A CN103178211 A CN 103178211A CN 2013101078348 A CN2013101078348 A CN 2013101078348A CN 201310107834 A CN201310107834 A CN 201310107834A CN 103178211 A CN103178211 A CN 103178211A
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organic solar
interface layer
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moo
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CN103178211B (en
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秦平力
方国家
程飞
雷红伟
柯维俊
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Wuhan University WHU
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Abstract

The invention provides an organic solar cell which comprises a transparent conductive substrate, an anodic interface layer, an organic active layer and a metal electrode, wherein the anodic interface layer is a MoO3/MoS2 composite film. The anodic interface layer is a MoS2 film which is prepared on the transparent conductive substrate by using a magnetron sputtering method, an in-situ part of the MoS2 film is oxidized into MoO3 by using an ultraviolet-ozone cleaner. Compared with the traditional anodic interface layer, the anodic interface layer of the organic solar cell has the capability of solving the ITO (Indium Tin Oxide) corrosion problem and has good heat stability. According to the organic solar cell provided by the invention, an interface between an anode and the anodic interface layer is favorably improved, so that a hole can smoothly pass through the anodic interface layer and related interfaces, and therefore the purpose of improving the efficiency of the cell is achieved.

Description

MoO 3/ MoS 2laminated film is as organic solar batteries of anodic interface layer and preparation method thereof
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technical field
The present invention relates to a kind of MoO 3/ MoS 2laminated film, as organic solar batteries of anodic interface layer and preparation method thereof, belongs to thin-film material and devices field.
Background technology
The polymer organic solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect, be one of extremely important means that solve the energy, environmental problem, but the advantages such as simple to prepare, with low cost, lightweight flexibility have attracted numerous researchers' concern.Improving battery efficiency and stability is the matter of utmost importance faced at present, and this is directly related with polymer organic solar battery anode boundary layer.
Among the anodic interface layer of polymer organic solar cell, PEDOT:PSS is modal.Because it is the acid aqueous solution (PH flow 1), the ITO electrode is had to corrosiveness, affect the useful life of battery.In addition, German Bayer company applies for that many patents are protected PEDOT:PSS, especially at the synthetic this respect of monomer ethylenedioxy thiophene (PEDOT).Therefore, PEDOT employed both at home and abroad mainly directly buys from German Bayer company.Meanwhile, the result of study of Organic Light Emitting Diode shows that PEDOT:PSS is not a kind of very desirable electronic barrier layer (F. Yakuphanoglu, W.A. Farooq, Electrical characterization of ITO/PEDOT-PSS/MEH-PPV:PCBM organic diode, Optoelectron. Adv. Mat., 5 (2011) 186-190).Because there are these limitation in PEDOT:PSS, must find as early as possible a kind of new substitute.Due to inorganic oxide mechanical performance, electrical property better, cost is lower, transparent at visible light part, good thermal stability and carrier mobility ability are arranged, in nanometer to being easier to the advantage such as control in the micron-scale scope, researcher is transferred on the p-type metal oxide of broad stopband, high work function and mobility studying interest gradually.At present by NiO, MoO 3, V 2o 5and WO 3substitute the anodic interface layer of organic substance PEDOT:PSS as battery.Wherein, with MoO 3as the P3HT:PCBM system battery efficiency of anodic interface layer up to 3.55% (Zhao, DW et al, An inverted organic solar cell with an ultrathin Ca electron-transporting layer and MoO 3hole-transporting layer, appl. Phys. Lett.2009, 95: 153304).
MoO 3film is the complex of a multivalence state, and the defect of existence, especially blemish can have very strong adsorption property to water, oxygen etc., and it is unfavorable during by it layer of the anodic interface for battery, battery to be stablized.Because the mobility in hole is low with respect to the mobility of electronics, can allow hole by anodic interface layer and related interfaces, the performance that improves battery be seemed to particularly important smoothly, hole mobility in inorganic oxide anode interlayer be attempted to improve in all its bearings by a lot of seminars.Some scholars are when preparation anodic interface layer, the photon number that the sacrifice of take reaches photosensitive layer adds one deck Ag conductive film therein as cost, whole anodic interface layer is made to a sandwich structure (H. Jin, C. Tao et al Efficient, Large Area ITO-and-PEDOT-free Organic Solar Cell Sub-modules adv. Mater.24 (2012) 2572-2577.), although can reduce volume defect, can not reduce the potential barrier between anode and polymer.S. Shao seminar is by MoO 3mixed with PEDOT:PSS, attempt to utilize both sides' advantage to reach the efficiency of raising battery and purpose (S. Shao, J. Liu, et al, the In Situ Formation of MoO of stability 3in PEDOT:PSS Matrix:A Facile Way to Produce a Smooth and Less Hygroscopic Hole Transport Layer for Highly Stable Polymer Bulk Heterojunction Solar Cells, adv. Energy Mater.(2012) 1-7).Due to the existence of PEDOT:PSS, can bring the unstable of device performance.D.S. Ghosh and G. Fang utilize Plasma (T.L. Chen, R. Betancur et al, Efficient polymer solar cell employing an oxidized Ni capped Al:ZnO anode without the need of additional hole-transporting layer app. Phy. Let.100 (2012) 013310.) and UV-ozone (F. Cheng, G. Fang et al, Enhancing the performance of P3HT:ICBA based polymer solar cells using LiF as electron collecting buffer layer and UV – ozone treated MoO 3as hole collecting buffer layer, sol. Energy Mate.Sol. Cells110 (2013) 63-68) mode is processed oxide surface, except being attached to its surperficial pollutant, improve the defect on anodic interface layer surface, allow inorganic oxide anode interlayer fully contact with photosensitive layer, As time goes on, can't protect and allow Plasma and UV-ozone action effect continue, unfavorable to stablizing of battery performance, neither fundamentally solve problem.
Utilize the UV ozone cleaning apparatus by MoS 2be oxidized to MoO 3, as the method for the anodic interface layer of organic solar batteries, by K.Ueno seminar, report (S. Kato, R. Ishikawa, Y. Kubo, H. Shirai1, K. Ueno, Efficient organic photovoltaic cells using hole-transporting MoO 3buffer layers converted from solution-processed MoS 2films, j. Appl. Phy.50 (2011) 071604), but their prepared MoS 2method be the method for sol-gel, cause the performance of battery good not.
The present invention utilizes magnetron sputtering to prepare MoS 2film, utilize the UV ozone cleaning apparatus that its partial oxygen is changed into to MoO 3, original position prepares the anodic interface layer of organic solar batteries, has improved the efficiency of battery, than K.Ueno seminar, reports that best battery efficiency exceeds nearly 25%.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of MoO 3/ MoS 2laminated film is as organic solar batteries of anodic interface layer and preparation method thereof.Original position of the present invention prepares the anodic interface layer of organic solar batteries, MoO 3/ MoS 2laminated film, as the anodic interface layer, reaches the purpose that improves battery efficiency.
Organic solar batteries provided by the present invention, comprise electrically conducting transparent substrate, anodic interface layer, organic active layer and metal electrode, and described anodic interface layer is MoO 3/ MoS 2laminated film.
Described electrically conducting transparent substrate is ITO electro-conductive glass, FTO electro-conductive glass, AZO electro-conductive glass, ITAZO electro-conductive glass or be coated with the flexible transparent plastic (as polyester resin) of ITO.
The described organic active layer mixed solution that to be P3HT:PCBM(be comprised of poly-3-base thiophene and C60 derivative is as photosensitive layer).
Described metal electrode is Al electrode or Ag electrode.
The present invention utilizes the method for magnetron sputtering, on transparent conductive substrates, prepares MoS 2, utilize the method for UV ozone cleaning apparatus that its partial oxygen is changed into to MoO 3, as the anodic interface layer of organic solar batteries.
It is above-mentioned with MoO that the present invention also provides 3/ MoS 2the preparation method of the organic solar batteries that laminated film is the anodic interface layer comprises:
(1) clean the substrate of electrically conducting transparent and dry;
(2) deposit MoS with magnetically controlled sputter method on the electrically conducting transparent substrate 2film;
(3) by MoS 2film is put into the UV ozone cleaning apparatus, and under the atmosphere and room temperature of atmosphere, UV ozone is processed 0.5～3 hour, by MoS 2the film portion in-situ oxidation becomes MoO 3;
(4) in air or under inert gas shielding, at MoO 3get rid of organic active layer on film;
(5) preparation of electrode: at organic active layer surface evaporation metal electrode, annealing under inert gas shielding (baking 5-10 min under 120-150 ℃).
Above-mentionedly with magnetically controlled sputter method, deposit MoS 2the process of film is:
(1) by purity, be 99.9% MoS 2target and substrate are put into vacuum chamber;
(2) start to vacuumize, until vacuum degree is better than 3 * 10 -3pa;
(3) keeping underlayer temperature is 30 ~ 400 degrees centigrade, and the adjusting argon flow amount is 10 ~ 12sccm;
(4) regulating radio frequency sputtering power is 40 ~ 140W, and sputtering pressure 0.5～3.0 Pa starts sputter, and sputtering time is 0.1～16 minute.
The anodic interface layer that the present invention is prepared, technique and method are simple, and, there is not the corrosion problems to ITO in the anodic interface layer (as PEDOT:PSS) with respect to traditional, Heat stability is good.Prepare MoO with respect to tradition 3film, the MoO prepared with the present invention 3/ MoS 2film, be conducive to improve the interface between anode and anodic interface layer, and the efficiency of corresponding battery is up to 4.00%.
The accompanying drawing explanation
Accompanying drawing 1 is with growth in situ MoO 3/ MoS 2laminated film is as the organic solar energy cell structure schematic diagram of anodic interface layer; 1-clear glass or flexible substrate, 2-anodic conductive film, 3-MoS 2film, 4-MoO 3film, 5-P3HT:PCBM bulk heterojunction photoactive layer, 6-aluminium electrode (or silver electrode);
Accompanying drawing 2 is the MoO with growth in situ 3film is as the organic solar batteries J-V curve of anodic interface layer.
Accompanying drawing 3 is MoS 2raman spectrogram before and after the film UV ozone.
Embodiment
The present invention is with growth in situ MoO 3/ MoS 2the organic photovoltaic battery of laminated film anodic interface layer can adopt following step preparation:
The preparation of 1 target
By purity, be 99.9% MoS 2being prepared into thickness is 5 millimeters round targets.
2 substrate processing
The substrate adopted in test is that electro-conductive glass (ITO electro-conductive glass, FTO electro-conductive glass, AZO electro-conductive glass, ITAZO electro-conductive glass, is coated with the flexible transparent plastic (polyester resin) of ITO, for commercially available prod or known technology) (list of references: 1. Guojia Fang, Dejie Li, et al., Fabrication and characterization of ZAO thin films prepared by DC magnetron sputtering with a highly conductive ceramic target j. Crystal Growth,2003,247 (3-4): 393-400; 2. Nanhai Sun, Guojia Fang, Qiao Zheng, MingjunWang, Nishuang Liu, Wei Liu and Xingzhong Zhao, Transparent conducting ITAZO anode films grown by a composite target RF magnetron sputtering at room temperature for organic solar cells semiconductor Science & Technology,24 (2009) 085025), before test, should at first to substrate, be cleaned.At first the electro-conductive glass sheet is cut into to suitable shape size, with cleaning agent, it is cleaned up, then running water rinses, deionized water rinsing, then place it in ultrasonic cleaner and use successively deionized water, ethanol, each ultrasonic cleaning of acetone 20 minutes, finally use deionized water rinsing, dry up and dry the substrate that can obtain the surface cleaning with dry high pure nitrogen.Conductive plastics is cut into to suitable shape size, cleans with cleaning agent, deionized water rinsing then, ethanol cleans, and with dry high pure nitrogen, dries up stand-by.
3 growth in situ MoO 3/ MoS 2the laminated film deposition process
(1) target and clean glass substrate are put into to Zhong relevant position, settling chamber, adjust the specimen holder position, make it to aim at target surface, and keep suitable distance.
(2) vacuum system is vacuumized.At first open cooling water.Open mechanical pump and take out low vacuum, after the system vacuum degree is lower than 10Pa, open the molecular pump pumping high vacuum, until the system vacuum degree is better than 3 * 10 -3pa.
(3) pass into appropriate high-purity argon gas in settling chamber, make ar pressure reach required deposition pressure.
(4) adopt general radio frequency planar magnetic control sputtering technique.High-purity Ar is as sputter and reacting gas, and whole process argon flow amount is being about 10 sccm.During sputter, the contrast temperature is 30--400 ℃ of variation, and sputtering pressure changes at 0.5--3.0 Pa, and sputtering power changes at 40--140W, by sedimentation time, controls film thickness.Sputtering time is 0.1～16 minute.
(5), after thin film deposition completes, sample is taken out in shutdown.
(6) sample of taking-up is put into to the UV ozone cleaning apparatus, under the atmosphere and room temperature of atmosphere, UV ozone is processed after 0.5～3 hour stand-by.
4 solar cell preparations
(1) organic photosensitive layer formula: with electronic balance, claim P3HT(Rieke Metals) 20.0 milligrams, PCBM(Nano C) 20.0 milligrams.After mixing, it is dissolved in the chlorobenzene of 1.0 milliliters.Then be placed on temperature controlled magnetic stirring apparatus, stirred 48 hours at 30～50 ℃.Wait upon use.
(2) in the gas tank of inert gas shielding, the MoO prepared 3get rid of one deck P3HT:PCBM on film.
(3) preparation of electrode: at P3HT:PCBM surface difference evaporated metal aluminium.By after annealing under inert gas shielding (under 120-150 ℃, toasting 5-10min).
5 materials and device performance test
In order to estimate with MoO 3/ MoS 2laminated film is as the photovoltaic property of the organic solar batteries of anodic interface layer, and we utilize Keithley 2400 testers to carry out the test of J-V curve to it.
Below in conjunction with embodiment, the present invention is further described, this description is just in order better to illustrate the present invention rather than to be limited.The present invention is not limited to particular example as described herein.Any those of skill in the art are easy to be further improved without departing from the spirit and scope of the present invention and perfect, all fall into protection scope of the present invention.
Embodiment mono-:
(1) clean the SnO of FTO(doped with fluorine 2) the electro-conductive glass sheet: first the electro-conductive glass slide is put into to the solution that fills cleaning agent (as vertical person who is not a member of any political party's liquid detergent) and soaked 10 minutes, after then repeatedly cleaning, clear water rinses; Then with polishing powder, carry out polishing; Then put into respectively the vessel that deionized water, acetone and alcohol are housed and distinguish ultrasonic 20 minutes; After finally putting twice of deionized water rinsing into, by nitrogen gun, dry up and put into 80 ℃ of oven dry of baking oven to eliminate stress.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 1 * 10 -4pa, Ar flow 10.0 sccm, underlayer temperature: 400 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1 min.The sample of taking-up is put into to the UV ozone cleaning apparatus, and under the atmosphere and room temperature of atmosphere, UV ozone is processed after 2.0 hours stand-by.
(3) organic photosensitive layer formula: claim P3HT 20.0 milligrams with electronic balance, 20.0 milligrams of PCBM.After mixing, it is dissolved in the chlorobenzene of 1.0 milliliters.Then be placed on temperature controlled magnetic stirring apparatus, 40 ℃ are stirred 48 hours.
(4) in the gas tank of inert gas shielding, the transparent MoO prepared in position 3get rid of the approximately thick P3HT:PCBM of 150 nm of one deck on film.
(5) preparation of electrode: evaporate respectively the approximately thick metallic aluminium of 150 nm on the P3HT:PCBM surface.By after annealing under inert gas shielding (150 ℃ of baking 5 min).Obtain the organic photovoltaic battery of structure as shown in Figure 1.
(6) battery performance explanation: open circuit voltage is: 0.636 V; The short circuit current of battery is: 10.02 mA/cm 2, fill factor, curve factor is: 63.0%, energy conversion efficiency is: 4.00 %(are shown in accompanying drawing 2).
Embodiment bis-:
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 2 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 200 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1 min.The sample of taking-up is put into to the UV ozone cleaning apparatus, and under the atmosphere and room temperature of atmosphere, UV ozone is processed after 3.0 hours stand-by.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: with embodiment mono-.
(6) battery performance explanation: open circuit voltage is: 0.612 V, the short circuit current of battery is: 9.49 mA/cm 2, fill factor, curve factor is: 61.3%, energy conversion efficiency is: 3.56 %(are shown in accompanying drawing 2).
Embodiment tri-:
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0 sccm, underlayer temperature: 30 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1 min.UV ozone is processed with embodiment mono-.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: with embodiment mono-.
(6) battery performance parameter explanation: establishing road voltage by cable is: 0.618 V, the short circuit current in pond is: 8.57 mA/cm 2, fill factor, curve factor is: 48.8%, energy conversion efficiency is: 2.59 %(are shown in accompanying drawing 2).
Embodiment tetra-:
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0 sccm, underlayer temperature: 300 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 0.1 and 10.0 min.UV ozone is processed with embodiment mono-.Sputtering time is 10.0 min MoS 2raman spectrogram before and after the processing of film UV ozone as shown in Figure 3.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: evaporate respectively the approximately thick metallic aluminium of 150 nm on the P3HT:PCBM surface.By after annealing under inert gas shielding (150 ℃ of baking 10 min).
(6) battery performance explanation: sputtering time 0.1 min: open circuit voltage Voc is 0.634 V, and short-circuit current density Jsc is 9.36 mA/cm 2, fill factor, curve factor FF is 51.6%, photoelectric conversion efficiency is 3.06%; Sputtering time 10.0 min: open circuit voltage Voc is 0.615 V, and short-circuit current density Jsc is 7.64 mA/cm 2, fill factor, curve factor FF is 61.9%, photoelectric conversion efficiency is 2.90%.
Embodiment five:
(1) clean ito glass: with embodiment mono-.
(2) MoO on the ITO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0 sccm, underlayer temperature: 300 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 16.0 min.UV ozone is processed with embodiment mono-.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: evaporate respectively calcium and the thick metallic aluminium of 150 nm that about 20nm is thick on the P3HT:PCBM surface.By after annealing under inert gas shielding (150 ℃ of baking 10 min).
(6) battery performance explanation: open circuit voltage Voc is 0.622 V, and short-circuit current density Jsc is 6.15 mA/cm 2, fill factor, curve factor FF is 57.2%, photoelectric conversion efficiency is 2.19%.
Embodiment six:
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0 sccm, underlayer temperature: 300 ℃, sputtering pressure: 0.5 Pa and 3.0Pa, sputtering power is at 40 W, sputtering time 1.0 min.UV ozone is processed with embodiment mono-.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: with embodiment mono-.
(6) battery performance explanation: sputtering pressure is 0.5 Pa: open circuit voltage Voc is 0.620 V, and short-circuit current density Jsc is 7.05 mA/cm 2, fill factor, curve factor FF is 50.7%, photoelectric conversion efficiency is 2.22%; Sputtering pressure is 3.0Pa: open circuit voltage Voc is 0.631 V, and short-circuit current density Jsc is 8.88 mA/cm 2, fill factor, curve factor FF is 55.3%, photoelectric conversion efficiency is 3.11%.
Embodiment seven
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by MoS 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 300 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 140 W, sputtering time 1.0 min.UV ozone is processed with embodiment mono-.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) get rid of organic film on MoO3: with embodiment mono-.
(5) preparation of electrode: with embodiment mono-.
(6) battery performance explanation: open circuit voltage Voc is 0.626 V, and short-circuit current density Jsc is 5.28 mA/cm 2, fill factor, curve factor FF is 52.3%, photoelectric conversion efficiency is 1.73%.
Embodiment eight
(1) clean glass: with embodiment mono-.
(2) prepare ITAZO(indium tin aluminium zinc composite oxide) nesa coating: the In/Sn target that use and substrate are packed in magnetron sputtering apparatus, and place three AZO(ZnO and mix Al on the In/Sn target) little pottery, little ceramic target forms equilateral triangle on the In/Sn target, with radio-frequency power supply, carries out sputter.Condition of work is: base vacuum: 1 * 10 -3pa; Underlayer temperature: 27 ℃; O 2/ (Ar+O 2): 7%; Sputtering power: 100 W; Sputtering time: 8 min; Sputtering pressure: 1.0 Pa.
(3) prepare MoO on the ITAZO substrate 3film: by the MoS that will use 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 150 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1.0 min.UV ozone is processed with embodiment mono-.
(4) organic photosensitive layer formula: with embodiment mono-.
(5) at MoO 3on get rid of organic film: with embodiment mono-.
(6) preparation of electrode: with embodiment mono-.
(7) battery performance explanation: open circuit voltage Voc is 0.631 V, and short-circuit current density Jsc is 9.21 mA/cm 2, fill factor, curve factor FF is 57.0%, photoelectric conversion efficiency is 2.76%.
Embodiment nine
(1) clean glass: with embodiment mono-.
(2) prepare the AZO(Al-Doped ZnO): the AZO target that use and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 1 * 10 -3pa; Underlayer temperature: 350 ℃; Ar throughput 10 sccm; Sputtering power: 100 W; Sputtering time: 20 min; Sputtering pressure: 1.0 Pa.
(3) prepare MoO on the AZO substrate 3film: by the MoS that will use 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 300 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1.0 min.UV ozone is processed with embodiment mono-.
(4) organic photosensitive layer formula: with embodiment mono-.
(5) at MoO 3on get rid of organic film: with embodiment mono-.
(6) preparation of electrode: with embodiment mono-.
(7) battery performance explanation: open circuit voltage Voc is 0.640 V, and short-circuit current density Jsc is 9.04 mA/cm 2, fill factor, curve factor FF is 53.9%, photoelectric conversion efficiency is 3.12%.
Embodiment ten
(1) at flexible and transparent conductive substrate (ITO/PET(polyester resin)) upper MoO 3the preparation of film: by the MoS that will use 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 150 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1.0 min.The sample of taking-up is put into to the UV ozone cleaning apparatus, and under the atmosphere and room temperature of atmosphere, UV ozone is processed after 0.5 hour stand-by.
(2) organic photosensitive layer formula: with embodiment mono-.
(3) at MoO 3on get rid of organic film: with embodiment mono-.
(4) preparation of electrode: evaporate respectively the approximately thick metallic aluminium of 150 nm on the P3HT:PCBM surface.By after annealing under inert gas shielding (150 ℃ of baking 6 min).
(5) battery performance explanation: open circuit voltage Voc is 0.630 V, and short-circuit current density Jsc is 8.46 mA/cm 2, fill factor, curve factor FF is 51.0%, photoelectric conversion efficiency is 2.72%.
Embodiment 11
(1) clean FTO glass: with embodiment mono-.
(2) MoO on the FTO substrate 3the preparation of film: by the MoS that will use 2target and substrate are packed in magnetron sputtering apparatus, with radio-frequency power supply, carry out sputter.Condition of work is: base vacuum: 3 * 10 -3pa, Ar flow 10.0sccm, underlayer temperature: 300 ℃, sputtering pressure: 1.0 Pa, sputtering power is at 40 W, sputtering time 1.0 min.UV ozone is processed with embodiment mono-.
(3) organic photosensitive layer formula: with embodiment mono-.
(4) at MoO 3on get rid of organic film: with embodiment mono-.
(5) preparation of electrode: evaporate respectively the approximately thick argent of 150 nm on the P3HT:PCBM surface.By after annealing under inert gas shielding (150 ℃ of baking 7 min).
(6) battery performance explanation: open circuit voltage Voc is 0.634 V, and short-circuit current density Jsc is 8.30 mA/cm 2, fill factor, curve factor FF is 53.6%, photoelectric conversion efficiency is 2.82%.

Claims (6)

1. an organic solar batteries, comprise electrically conducting transparent substrate, anodic interface layer, organic active layer and metal electrode, it is characterized in that, described anodic interface layer is MoO 3/ MoS 2laminated film.
2. organic solar batteries according to claim 1, is characterized in that, described electrically conducting transparent substrate is ITO electro-conductive glass, FTO electro-conductive glass, AZO electro-conductive glass, ITAZO electro-conductive glass or be coated with the flexible transparent plastic of ITO.
3. organic solar batteries according to claim 1, is characterized in that, described organic active layer is P3HT:PCBM.
4. organic solar batteries according to claim 1, is characterized in that, described metal electrode is Al electrode or Ag electrode.
5. the preparation method of organic solar batteries claimed in claim 1, is characterized in that, comprises the steps:
(1) clean the substrate of electrically conducting transparent and dry;
(2) deposit MoS with magnetically controlled sputter method on the electrically conducting transparent substrate 2film;
(3) by MoS 2film is put into the UV ozone cleaning apparatus, and under the atmosphere and room temperature of atmosphere, UV ozone is processed 0.5～3 hour, by MoS 2the film portion in-situ oxidation becomes MoO 3;
(4) in air or under inert gas shielding, at MoO 3get rid of organic active layer on film;
(5) preparation of electrode: at organic active layer surface evaporation metal electrode, anneal under inert gas shielding.
6. the preparation method of organic solar batteries according to claim 5, is characterized in that, with magnetically controlled sputter method, deposits MoS 2the process of film is:
(1) by purity, be 99.9% MoS 2target and substrate are put into vacuum chamber;
(2) start to vacuumize, until vacuum degree is better than 3 * 10 -3pa;
(3) keeping underlayer temperature is 30 ~ 400 degrees centigrade, and the adjusting argon flow amount is 10 ~ 12sccm;
(4) regulating radio frequency sputtering power is 40 ~ 140W, and sputtering pressure 0.5～3.0 Pa starts sputter, and sputtering time is 0.1～16 minute.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106409935A (en) * 2016-10-19 2017-02-15 华中科技大学 MoO3/MoS2/LiF flexible heterojunction solar cell and preparation method thereof
CN106486531A (en) * 2015-08-31 2017-03-08 台湾积体电路制造股份有限公司 Semiconductor device
CN107123468A (en) * 2017-04-27 2017-09-01 浙江大学 A kind of transparent conductive film containing function point analysis layer
CN111341915A (en) * 2020-05-19 2020-06-26 季华实验室 Method for manufacturing organic crystal solar cell device and photoelectric equipment
US10930809B2 (en) 2016-06-04 2021-02-23 International Business Machines Corporation Photovoltaic devices with increased efficiency and methods for making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010059240A1 (en) * 2008-11-21 2010-05-27 Plextronics, Inc. Doped interfacial modification layers for stability enhancement for bulk heterojunction organic solar cells
CN101771132A (en) * 2009-12-31 2010-07-07 武汉大学 Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof
WO2010119558A1 (en) * 2009-04-17 2010-10-21 パイオニア株式会社 Organic solar cell
WO2012018237A2 (en) * 2010-08-06 2012-02-09 Korea Institute Of Science And Technology Tandem solar cell using amorphous silicon solar cell and organic solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010059240A1 (en) * 2008-11-21 2010-05-27 Plextronics, Inc. Doped interfacial modification layers for stability enhancement for bulk heterojunction organic solar cells
WO2010119558A1 (en) * 2009-04-17 2010-10-21 パイオニア株式会社 Organic solar cell
CN101771132A (en) * 2009-12-31 2010-07-07 武汉大学 Organic photovoltaic battery with Cr2O3 as HTL (hole transport layer) and preparation method thereof
WO2012018237A2 (en) * 2010-08-06 2012-02-09 Korea Institute Of Science And Technology Tandem solar cell using amorphous silicon solar cell and organic solar cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SOGO KATO: "Efficient organic photovoltaic cells using hole-transporting moO3 buffer layers converted from solution processed MoS2 films", <JAPANESE JOURAL OF APPLIED PHYSICS>, vol. 50, 20 July 2011 (2011-07-20) *
ZHEBO CHEN: "Core shell MoO3 MoS2 Nanowires for Hydrogen Evolution:A Functional Design for Electrocatalytic Materials", <NANO LETTERS>, vol. 11, 6 September 2011 (2011-09-06), pages 4168 - 4174 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106486531A (en) * 2015-08-31 2017-03-08 台湾积体电路制造股份有限公司 Semiconductor device
CN106486531B (en) * 2015-08-31 2020-01-14 台湾积体电路制造股份有限公司 Semiconductor device with a plurality of semiconductor chips
US10930809B2 (en) 2016-06-04 2021-02-23 International Business Machines Corporation Photovoltaic devices with increased efficiency and methods for making the same
CN106409935A (en) * 2016-10-19 2017-02-15 华中科技大学 MoO3/MoS2/LiF flexible heterojunction solar cell and preparation method thereof
CN106409935B (en) * 2016-10-19 2017-10-24 华中科技大学 A kind of MoO3/MoS2/ LiF flexibility heterojunction solar batteries and preparation method thereof
CN107123468A (en) * 2017-04-27 2017-09-01 浙江大学 A kind of transparent conductive film containing function point analysis layer
CN107123468B (en) * 2017-04-27 2019-07-30 浙江大学 A kind of transparent conductive film containing function point analysis layer
CN111341915A (en) * 2020-05-19 2020-06-26 季华实验室 Method for manufacturing organic crystal solar cell device and photoelectric equipment
CN111341915B (en) * 2020-05-19 2020-09-01 季华实验室 Method for manufacturing organic crystal solar cell device and photoelectric equipment

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