CN103178151A - Silicon-based thin film solar cell - Google Patents
Silicon-based thin film solar cell Download PDFInfo
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- CN103178151A CN103178151A CN2011104360411A CN201110436041A CN103178151A CN 103178151 A CN103178151 A CN 103178151A CN 2011104360411 A CN2011104360411 A CN 2011104360411A CN 201110436041 A CN201110436041 A CN 201110436041A CN 103178151 A CN103178151 A CN 103178151A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a processing method of a silicon-based thin film solar cell. The processing method of the silicon-based thin film solar cell comprises providing base materials and precipitating a first transparent conducting layer, a P type semi-conductor layer, a nature i type semi-conductor layer, an N type semi-conductor layer, a nanometer metallic layer, a second transparent conducting layer and a back electrode. The silicon-based thin film solar cell has the advantage of effectively avoiding high power bombardment of a follow-up back electrode processing to improve the reliability of the cell due to the arrangement of the nanometer metallic layer.
Description
Technical field
The present invention is a kind of silicon-based film solar cells, a kind of silicon-based film solar cells that comprises the nano metal particles sublayer particularly, and by the setting of this nano metal particles sublayer, battery is the high power bombardment of the follow-up back electrode processing procedure of ground resistance barrier effectively.
Background technology
The international energy shortage, impel the application of solar cell more and more to be subject to many governments and attention among the people, because of the solar energy supply without scarcity after, and produce the electric energy process and can not produce environmental pollution, become popular alternative energy source, drive solar cell industry flourish.The energy that radiates out from sun surface is converted into electric power approximately 3.8 * 10
23KW; The solar energy of the total amount of this solar energy as converting and received on the earth with 100,015,000 kilometers, the distance sun represents to be about 1.77 * 10 with electric power
14It is large that about kW, this value are approximately 100,000 times of global average year power consumption.If can effectively use this energy, can not only solve the problem of the expendable energy, the mutually responsible problem also can achieve a solution in the lump.In numerous solar battery technologies, thin-film solar cells is because using few, the total opto-electronic conversion amount of silicon raw material high and the advantage such as can be combined with building materials and get most of the attention.
At present, with the thin-film solar cells of glass as substrate, most of hyper-base plate (Superstrate) structure that adopts.The hyper-base plate structure is for plating transparency conducting layer (Transparent Conductive Oxide on glass substrate, TCO) after, sequentially plate again three layers of silicon membrane layer of P-I-N (claiming again light absorbing zone), plate at last metal level, incident light enters in solar cell via the glass substrate end again.Because the bottom of the thin-film solar cells of hyper-base plate structure is metal, if incident light is absorbed by light absorbing zone fully, can light be reflected back absorbed layer by metallic reflector, again utilize luminous energy.But because metal level is not good to the degree of adhering to of silicon, if the Direct precipitation metal level is on silicon, junction at metal level and silicon absorbs because defective causes light, make light return absorbed layer by usable reflection, add a tco layer between metal level and silicon therefore be everlasting, with the reflectivity that increases light and the stability that improves element.
Therefore Superstrate structural membrane solar cell needs the two layers of transparency conducting layer in up and down, be called forward direction transparency conducting layer (Front TCO) near that layer of incident light, another layer is called transparency conducting layer (Back TCO) dorsad.If have an even surface, incident light namely directly advances directly to go out thin-film solar cells, can't effectively utilize solar energy, if TCO has irregular concaveconvex structure (Texture), can increase the degree of light scattering, improves the absorbed chance of light.Yet, in the middle of the technology of growth solar cell with the TCO film, sputtering method is most study, the most ripe a kind of preparation method, but it is a kind of high-octane deposition process, therefore when processing the deposition of back electrode of solar cell, its Ions Bombardment substrate or bombardment grown good film surface and easy injury.Based on the problems referred to above, so the utmost point need propose a kind of thin-film solar cells, can effectively reach the effect of the high power bombardment of the follow-up back electrode processing procedure of resistance barrier, and then improves the photoelectric conversion efficiency of whole solar cell.
With reference to United States Patent (USP) 5,213, No. 628, it discloses and a kind ofly to increase the carrier life-span of solar cell by adding amorphous silicon extrinsic semiconductor, reduces the compound probability in electronics electricity hole, to improve the photoelectric current conversion efficiency.Yet this patent does not disclose in detail to the processing procedure that high energy how to avoid back electrode bombards, and the efficient of this solar cell is too low, so also affects simultaneously the subsequent applications scope.
Announce No. the 6th, 380,479, patent with reference to the U.S., it mainly discloses a kind of processing procedure mode of solar cell.Its substrate that utilizes roughening is used and is improved current characteristics, and then catoptrical ratio is dropped to below 10%, and increase cell integrated photoelectric conversion efficiency to increase the utilization rate of incident light.Yet this patent does not disclose in detail to the processing procedure that high energy how to avoid back electrode bombards, and so affects simultaneously the subsequent applications scope yet.
Duty is event, so applicant's carefulness is tested and research, and a spirit of working with perseverance, finally work out a kind of manufacturing method thereof of silicon-based film solar cells, can effectively reach the effect of the high power bombardment of the follow-up back electrode processing procedure of resistance barrier, and then reach the lifting of whole photoelectric conversion efficiency.
Summary of the invention
Main purpose of the present invention is to provide a kind of preparation method of thin-film solar cells, and it is under the high-energy back electrode processing procedure of knowing, and develops the nano metal particles sublayer that can a kind ofly hinder the bombardment of barrier high-energy, and then makes the whole Yield lmproved of element.
For reaching above-mentioned purpose, the present invention proposes a kind of manufacturing method thereof of thin-film solar cells, and its step comprises: a base material is provided; Deposit one first transparency conducting layer on this base material; Deposit a p type semiconductor layer on this first transparency conducting layer; Deposit an essence (i) type semiconductor layer on this p type semiconductor layer; Deposit a n type semiconductor layer on this essence (i) semiconductor layer; Deposit a nano metal particles sublayer on this n type semiconductor layer; Deposit one second transparency conducting layer on this nano metal particles sublayer; And deposit a back electrode on this second transparency conducting layer.
According to another feature of the present invention, wherein this nano metal particles sublayer is selected from one of a kind of or alloy of gold, silver, copper, platinum, nickel, zinc, tin, aluminium.
A kind of thin-film solar cells of the present invention has following effect:
By this nano metal particles of deposition sublayer can effectively keep out the back electrode material directly bombardment to main electric layer (P-I-N); Simultaneously, also can effectively make the back electrode processing procedure keep high production and more stable;
2. compared with the solar cell that does not add the nano metal particles sublayer, its photoelectric conversion efficiency of solar cell that contains the nano metal particles sublayer of the present invention can effectively promote; And
3. the present invention can effectively must make solar cell yield and yield higher, and can keep high efficiency, to reduce production costs.
For above and other purpose of the present invention, feature and advantage can be become apparent, several preferred embodiments cited below particularly, and coordinate appended graphicly, elaborate.
Description of drawings
Fig. 1 is the structural representation of an embodiment of thin-film solar cells of the present invention;
Fig. 2 is the preparation flow figure of thin-film solar cells of the present invention;
Fig. 3 is the structural representation of another embodiment of thin-film solar cells of the present invention.
Reference numeral:
100 thin-film solar cells
110 base materials
120 first transparency conducting layers
130 p type semiconductor layers
140 essence (i) type semiconductor layer
150 n type semiconductor layers
151 nano metal particles sublayers
160 second transparency conducting layers
170 back electrodes
The preparation flow figure of 200 thin-film solar cells
Embodiment
Although the present invention can show as multi-form embodiment, but the content of content shown in the drawings and explanation below is preferred embodiment of the present invention, and please to understand content disclosed herein be to be thought of as one example of the present invention, and be not that intention is in order to be limited to the present invention in diagram and/or described specific embodiment.
Now please refer to Fig. 1, be an embodiment of thin-film solar cells of the present invention.Thin-film solar cells 100 mainly comprises: base material 110, the first transparency conducting layer 120, p type semiconductor layer 130, essence (i) type semiconductor layer 140, n type semiconductor layer 150, the second transparency conducting layer 160, back electrode 170 and nano metal particles sublayer 151.
Wherein, the first transparency conducting layer 120 is formed on this base material 100, is used for taking out electric energy; P type semiconductor layer 130 is formed on this first transparency conducting layer 120, for generation of electric hole; Essence (i) type semiconductor layer 140 is formed on this p type semiconductor layer 130, is used for improving the absorption region of visible spectrum photon; N type semiconductor layer 150 is formed on this essence (i) semiconductor layer 140, for generation of electronics; The second transparency conducting layer 160 is formed on this n type semiconductor layer 150; And back electrode 170, be formed on this second transparency conducting layer 160, be used for taking out electric energy.
It should be noted that traditional thin-film solar cells often in order to keep production capacity or to improve production capacity, improves to increase plated film speed and electricity is starched power, but often cause Coating Materials (P-I-N) excessively to be bombarded and cause yield to reduce.Therefore the present invention utilizes one deck nano metal particles sublayer 151 as thin as a wafer, can effectively reach the effect of the high power bombardment of follow-up back electrode 170 processing procedures of resistance barrier, more can in the situation that do not affect production capacity, keep high yield.Simultaneously, nano metal particles of the present invention sublayer 151 still also comprises a feature: it can prevent that also the material of back electrode 170 from diffusing into the electric layer of solar cell (P-I-N), cause photoelectric conversion efficiency to reduce, even cause the damage of solar cell device.Specifically describe, be also to comprise a nano metal particles sublayer 151 between this n type semiconductor layer 150 of the present invention and this second transparency conducting layer 160, enter between this n type semiconductor layer 150, this essence (i) type semiconductor layer 140 and this p type semiconductor layer 130 in order to the material that prevents this back electrode 170, and then cause the photoelectric conversion efficiency of this thin-film solar cells 100 to reduce.Simultaneously, also can effectively make follow-up back electrode 170 processing procedures keep high production and more stable.
In addition, the grain size of this nano metal particles sublayer 151 is between 5 to 200 nanometers, and the nano particle of this nano metal particles sublayer is between 20% to 60% at the surface coverage of this n type semiconductor layer 150.
Now please refer to Fig. 2, it is shown as the manufacturing method thereof 200 of thin-film solar cells of the present invention, and it comprises the following step:
Step 210 a: base material 110 is provided;
Step 220: deposition one first transparency conducting layer 120 is on this base material 110;
Step 230: deposition one p type semiconductor layer 130 is on this first transparency conducting layer 120;
Step 240: deposition one essence (i) type semiconductor layer 140 is on this p type semiconductor layer 130;
Step 250: deposition one n type semiconductor layer 150 is on this essence (i) semiconductor layer 140;
Step 260: deposition one nano metal particles sublayer 151 is on this n type semiconductor layer 150;
Step 270: deposition one second transparency conducting layer 160 is on this nano metal particles sublayer 151; And
Step 280: deposition one back electrode 170 is on this second transparency conducting layer 160.
Wherein, base material 110 is selected from a kind of material of glass, plastic base, semiconduction substrate, insulated substrate, flexible base plate or corrosion resistant plate.
The first transparency conducting layer 120 is selected from tin indium oxide (ITO), aluminum zinc oxide (AZO), fluorine doped tin oxide film (FTO), tin oxide (SnO
2One of) and zinc oxide (ZnO), and its thickness is between 200 nanometer to 800 nanometers.Should be noted, the preparation method of different nesa coatings can affect the quality of its photoelectric characteristic that has.Preferably, select can acid and alkali-resistance heat-resisting, moisture-proof and the film forming raw material is cheap and production cost is low fluorine doped tin oxide film (FTO).
The definition of p type semiconductor layer 130: add impurity (Impurities) in order to produce unnecessary electric hole in the script material, consist of the semiconductor layer of most carriers with electric hole.Example: with silicon or Ge semiconductor, in its extrinsic semiconductor, the impurity (Impurities) that mixes 3 valency atoms forms unnecessary electric hole, makes this electricity hole as the function mode of electric current.
Essence (i) type semiconductor layer 140 has the greatest impact for the electrical characteristics of thin-film solar cells, reason is that electronics and electric hole are when material internal conducts, if the thickness of essence (i) type semiconductor layer 140 is blocked up, it is high that both overlap probability, for avoiding this phenomenon to occur, essence (i) type semiconductor layer 140 is unsuitable blocked up.Otherwise essence (i) type semiconductor layer 140 thickness are crossed when thin, cause easily that to inhale optical activity not enough.
N type semiconductor layer 150 refers to that the impurity that adds can produce unnecessary electronics in this material, consist of the semiconductor of most carriers with electronics, namely is referred to as n type semiconductor layer.For instance, with regard to silicon or SiGe semiconductor, if when the impurity of 5 valency atoms is mixed in extrinsic semiconductor, can form unnecessary electronics, and with electron stream as main function mode.
The preparation method of p type semiconductor layer 130, essence (i) type semiconductor layer 140 and n type semiconductor layer 150 is selected from one of electricity slurry enhanced chemical formula vapour deposition process, hot filament CVD, electron cyclotron resonance chemical vapor deposition method, superfrequency electricity slurry enhanced chemical formula vapour deposition process, Low Pressure Chemical Vapor Deposition, electricity slurry assist type chemical vapour deposition (CVD) and aumospheric pressure cvd method.Should be noted, the preparation of p type semiconductor layer 130, essence (i) type semiconductor layer 140 and n type semiconductor layer 150 is originated and will be affected the quality of its photoelectric characteristic.
Key character of the present invention: at solar cell power generation layer (P-I-N) afterwards, with lower electricity slurry power, after being coated with nano metal particles sublayer 151 as thin as a wafer, make back electrode 170 with high power again, when the material of back electrode 170 is bombarded to nano metal particles sublayer 151, this nano metal particles sublayer 151 can effectively keep out back electrode 170 materials directly bombardment to main electric layer (P-I-N).Simultaneously, also can effectively make back electrode 170 processing procedures keep high production and more stable.
Wherein, nano metal particles sublayer 151 is selected from one of a kind of or alloy of gold, silver, copper, platinum, nickel, zinc, tin, aluminium, and the preparation method of nano metal particles sublayer 160 is selected from one of sputtering method, vapour deposition method, galvanoplastic, chemical vapour deposition technique, sol-gel process, spraying cracking process, infusion process, method of spin coating, wire mark method and electrochemical process.
It should be noted that the particle grain size of nano metal particles sublayer 151 is between 5 to 200 nanometers.Preferably, the particle grain size of nano metal particles sublayer 160 is between 20 to 50 nanometers.Should be noted, nano metal particles sublayer 160 is not to be continuous film fully, but some nano metal particles that disperse form.Therefore, the nano particle of nano metal particles sublayer 151 is between 20%～60% at the surface coverage of n type semiconductor layer 150, that is to say that the distribution density of nano metal particles on the surface is 10
6～10
10/ m
2Preferably, the nano particle of this nano metal particles sublayer 160 at the surface coverage of n type semiconductor layer 150 between 50%～60%; That is to say that this nano metal particles is 10 in the surface distributed density of n type semiconductor layer 150
9～10
10/ m
2Should be noted, this nano metal particles in surface distributed density greater than 10
7/ m
2More than can effectively promote whole photoelectric conversion efficiency.
The second transparency conducting layer 160 is selected from tin indium oxide (ITO), aluminum zinc oxide (AZO), fluorine doped tin oxide film (FTO), tin oxide (SnO
2One of) and zinc oxide (ZnO), and its thickness is between 200 nanometer to 800 nanometers.Should be noted, the preparation method of different nesa coatings can affect the quality of its photoelectric characteristic that has.In addition, back electrode 170 is selected from nickel, gold, silver, titanium, palladium, and one of the electric conducting material such as aluminium.In one embodiment, the second transparency conducting layer 160 of the present invention is selected from zinc oxide (ZnO).Wherein, ZnO is the direct gap compound semiconductor materials of II-VI family tool wurtzite structure, and the ZnO film structure is natural exists zinc gap and oxygen room, makes it present the semi-conductive physical property of N-shaped.It not only can be at hydrogen (H
2) have higher stability in electricity slurry environment, and more can realize good photoelectric characteristic, as the low-temperature epitaxy of low-resistivity, suede structure (texture) and high transmission rate, thereby become in thin-film solar cells, have the nesa coating of competitiveness.The method of growing ZnO thin-film is a lot of at present, comprises pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition equipment (MOCVD), radio frequency/dc sputtering (RF/DC Sputtering), aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (LPCVD), electric beam evaporation (EBRE), spraying thermal decomposition (Spray Pyrolysis) and sol-gel process (sol-gel) etc.Be used at present the ZnO film preparation of solar cell and element thereof, mainly magnetic control sputtering plating (Magnetron Sputtering in the world, MS), metal organic chemical vapor deposition (Metal organic chemical vapor deposition, MOCVD) and low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition, LPCVD) etc. be main.In the middle of the growth solar cell is used the technology of ZnO film, magnetron sputtering method is most study, the most ripe a kind of preparation method, but it is a kind of high-octane deposition process, therefore when processing the deposition of back electrode of solar cell, its Ions Bombardment substrate or bombardment grown good film surface and easy injury.Therefore, for head it off, adopt nano metal particles proposed by the invention sublayer 151 can reach smoothly the effect of high power (energy) bombardment of the follow-up back electrode processing procedure of resistance barrier, more can in the situation that do not affect production capacity, keep high yield.
In another execution mode in the present invention, the second transparency conducting layer 160 can omit, and as shown in Figure 3, it is roughly identical with Fig. 1, Main Differences is not have the second transparency conducting layer 170 to omit, and that is to say the surface of nano metal particles sublayer 151 Direct precipitations at n type semiconductor layer 150.Nano metal particles is between 20% to 90% at the surface coverage of n type semiconductor layer 150, is also that nano metal particles is 10 in the surface distributed density of n type semiconductor layer 150
6～10
13/ m
2
Separately, disclosed structure is applicable to amorphous silicon and microcrystalline silicon film solar cell.In addition, be not only applicable to single element cell (cell), more may be implemented in modular solar cell processing procedure.
＜embodiment 1 〉
Please coordinate with reference to Fig. 1, at first prepare a length of a film and wide be respectively 5 centimeters with the glass substrate of 10 centimeters, then sequentially deposit FTO first transparency conducting layer of 300 nanometers, the P/i/N semiconductor layer that is respectively 10/250/10 nanometer, the silver nano-metal particle layer that is of a size of 8 nanometers, ZnO second transparency conducting layer of 300 nanometers and the aluminum back electrode of 300 nanometers.The silver nano-metal particle layer is 60% at the surface coverage of this n type semiconductor layer 150.Wherein, this silver nano-metal particle layer is to be formed by sputter.Under the irradiation of standard sources AM 1.5, compared with the battery that does not contain the silver nano-metal particle layer, its efficient can promote 12%.
＜embodiment 2 〉
The Main Differences of the present embodiment and embodiment 1 is: the second transparency conducting layer changes AZO into and this nano metal particles sublayer changes the gold nano metal particle layer that is of a size of 20 nanometers into, is to be formed by the vapour deposition method evaporation.The gold nano metal particle layer is 60% at the surface coverage of this n type semiconductor layer 150.Under the irradiation of standard sources AM 1.5, compared with the battery that does not contain this gold nano metal particle layer, its efficient can promote 15%.
＜embodiment 3 〉
Please coordinate with reference to Fig. 3, the Main Differences of the present embodiment and embodiment 1 is: there is no the second transparency conducting layer, and the nano metal particles sublayer being the gold nano metal particle layer of size 50 nanometers, is to be formed by the vapour deposition method evaporation.The gold nano metal particle layer is 60% at the surface coverage of n type semiconductor layer 150.Under the irradiation of standard sources AM 1.5, compared with the battery that does not contain the gold nano metal particle layer, its efficient can promote 10%.
In sum, thin-film solar cells of the present invention has following effect:
By nano metal particles of the present invention sublayer can effectively keep out the back electrode material directly bombardment to main electric layer (P-I-N); Simultaneously, also can effectively make the back electrode processing procedure keep high production and more stable;
2. compared with the solar cell that does not add the nano metal particles sublayer, its photoelectric conversion efficiency of solar cell that contains the nano metal particles sublayer of the present invention can effectively promote;
3. the present invention can effectively must make solar cell yield and yield higher, and can keep high efficiency, to reduce production costs.
Although the present invention discloses with aforementioned preferred embodiment, so it is not to limit the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention, and when making various changes or modifications.Explanation described above can be done correction and the variation of each pattern, and can not destroy the spirit of this creation.Therefore protection scope of the present invention is as the criterion when looking the content that claim defines.
Claims (8)
1. the manufacturing method thereof of a thin-film solar cells, is characterized in that, its step comprises:
(a) provide a base material;
(b) deposition one first transparency conducting layer is on this base material;
(c) deposition one p type semiconductor layer is on this first transparency conducting layer;
(d) deposition one essence (i) type semiconductor layer is on this p type semiconductor layer;
(e) deposition one n type semiconductor layer is on this essence (i) semiconductor layer;
(f) deposition one nano metal particles sublayer is on this n type semiconductor layer;
(g) deposition one second transparency conducting layer is on this nano metal particles sublayer; And
(h) deposition one back electrode is on this second transparency conducting layer;
Wherein, the grain size of this nano metal particles sublayer is between 5 to 100 nanometers, and the nano particle of this nano metal particles sublayer is between 20% to 60% at the surface coverage of this n type semiconductor layer.
2. manufacturing method thereof according to claim 1, is characterized in that, this first transparency conducting layer of step (c) is fluorine doped tin oxide film (FTO).
3. manufacturing method thereof according to claim 1, is characterized in that, this second transparency conducting layer of step (g) is aluminum zinc oxide (AZO).
4. manufacturing method thereof according to claim 1, is characterized in that, this nano metal particles sublayer of step (f) is selected from one of gold, silver, copper, platinum, nickel, zinc, tin, aluminium and alloy thereof.
5. manufacturing method thereof according to claim 1, it is characterized in that, the deposition process of this nano metal particles sublayer of step (f) is selected from one of sputtering method, vapour deposition method, galvanoplastic, chemical vapour deposition technique, sol-gel process, spraying cracking process, infusion process, method of spin coating, wire mark method and electrochemical process.
6. manufacturing method thereof according to claim 5, is characterized in that, the deposition process of this nano metal particles sublayer of step (f) is the spraying cracking process.
7. manufacturing method thereof according to claim 1, is characterized in that, this back electrode of step (h) is selected from one of electric conducting materials such as nickel, gold, silver, titanium, palladium, platinum and aluminium.
8. manufacturing method thereof according to claim 1, is characterized in that, this nano metal particles sublayer of step (f) between 50%～60%, is also that surface distributed density is 10 at the surface coverage of n type semiconductor layer
9～10
10/ m
2
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030230337A1 (en) * | 2002-03-29 | 2003-12-18 | Gaudiana Russell A. | Photovoltaic cells utilizing mesh electrodes |
| JP2010123675A (en) * | 2008-11-18 | 2010-06-03 | Fuji Electric Holdings Co Ltd | Thin-film solar cell, and method of manufacturing the same |
| US20110226322A1 (en) * | 2010-03-22 | 2011-09-22 | National Taiwan University | Solar battery unit |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030230337A1 (en) * | 2002-03-29 | 2003-12-18 | Gaudiana Russell A. | Photovoltaic cells utilizing mesh electrodes |
| JP2010123675A (en) * | 2008-11-18 | 2010-06-03 | Fuji Electric Holdings Co Ltd | Thin-film solar cell, and method of manufacturing the same |
| US20110226322A1 (en) * | 2010-03-22 | 2011-09-22 | National Taiwan University | Solar battery unit |
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Application publication date: 20130626 |