CN103178077B - Organic elctroluminescent device and method for packing thereof - Google Patents
Organic elctroluminescent device and method for packing thereof Download PDFInfo
- Publication number
- CN103178077B CN103178077B CN201110432003.9A CN201110432003A CN103178077B CN 103178077 B CN103178077 B CN 103178077B CN 201110432003 A CN201110432003 A CN 201110432003A CN 103178077 B CN103178077 B CN 103178077B
- Authority
- CN
- China
- Prior art keywords
- film layer
- afluon
- asta
- layers
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The present invention relates to a kind of organic elctroluminescent device and method for packing thereof, wherein, organic elctroluminescent device includes basic structure (215) and the encapsulating film layer (219) being packaged basic structure (215), basic structure include set gradually substrate, the first electrode layer, organic layer, the second electrode lay, described encapsulating film layer (219) includes at least two film layer from inside outwards set gradually, and each thicknesses of layers is all in 50 nm 1000 nm.Being arranged such, reflectance drops to the lowest, adds absorbance, it is not necessary to each sub-pixel carries out single thickness design.
Description
Technical field
The present invention relates to a kind of organic elctroluminescent device from top light emitting and method for packing thereof, belong to organic light emitting display technical field.
Background technology
Please join shown in Fig. 1, organic electroluminescent principle refers to that organic layer 111 uses organic material as luminescent layer, negative electrode 112 and anode 110 it is provided with in organic layer both sides, described anode 110 arranges on the substrate 100, anode 110 and negative electrode 112 are electrified stream by lead-in wire connection, when electric current is by luminescent layer, the organic material of luminescent layer will be luminous.According to this principle, have developed organic electroluminescence device (Organic
Light Emitting Diode, hereinafter referred to as OLED).OLED, relative to traditional liquid crystal display device, has that body is thin, preparation technology simple, luminescent material all solidstate, device the advantage such as softening can cause people's extensive concern, and increasing OLED is applied to display and lighting field.Although OLED Display Technique is considered as gradually one of the most promising Display Technique of future generation, but short shortcoming in its service life seriously constrains its application and development, effectively encapsulate OLED is to improve one of maximally effective approach in its service life, by OLED is encapsulated, each functional layer and the air insulated of device are opened, effectively prevents each functional module of OLED from contacting with compositions such as the water in air, oxygen and react.To reduce the rate of ageing of device, extend the service life of device.
The each relevant manufactures of industry is all in the encapsulation technology improving OLED hardy, traditional OLED uses cover plate encapsulation technology, cover plate i.e. cap 120 generally uses glass or metal, but, fluid sealant is needed during cover plate encapsulation, porous due to fluid sealant, the moisture penetration in air is easily made to enter device inside, therefore in this kind of packaged type, it is generally required to add calcium oxide or Barium monoxide inside OLED to absorb the moisture of residual when being coated with epoxy resin and when encapsulating as desiccant.
Conventional encapsulation technology also has UV (Ultraviolet Rays) solidification glue encapsulation, thin-film package etc..Wherein, UV adhesive curing principle is to produce living radical or cation after the light trigger (or photosensitizer) in UV curing materials absorbs ultraviolet light under ultraviolet irradiation, trigger monomer is polymerized, cross-links and connect a chemical reaction, makes binding agent be converted into solid-state by liquid within the several seconds.Thin-film package is the form using polymer and inorganic oxide to alternate, and wherein polymer plays planarization and reduces the effect of stress, and inorganic oxide is primarily used to intercept water oxygen.Compared with conventional packaged type, thin-film package need not drying sheet, and has certain flexibility, may be used for Flexible Displays and the encapsulation of top light-emitting display device.
Because prepared by the mode that thin-film package uses polymer and inorganic oxide alternates, structurally, thin-film encapsulation layer is similar to DBR (Prague Distributed reflection mirror) structure, the reflectance of any tunic of the luminance factor composition dbr structure of this structure is the biggest, and at different wavelength, reflectance is different, thus cause the microcavity effect under different wave length different, luminescent spectrum is caused to narrow, therefore, for different colours, need the thickness of individually designed polymer and inorganic oxide, otherwise, a kind of light therein will be produced microcavity and strengthen benefit, and suppress the light of other wavelength or change its emergent light wavelength, affect luminescence display effect.
Summary of the invention
Object of the present invention is to provide a kind of organic electroluminescent improving luminescence display effectDisplay deviceAnd method for packing.
For realizing object defined above, the present invention adopts the following technical scheme that a kind of organic elctroluminescent device, it includes basic structure and the encapsulating film layer being packaged basic structure, basic structure include set gradually substrate, the first electrode layer, organic layer, the second electrode lay, described encapsulating film layer includes at least three film layer from inside outwards set gradually, in described at least three film layer, innermost layer and outermost thicknesses of layers are 1/4 visible wavelength, and from inside outwards the thickness of the second film layer is 1/2 visible wavelength；And each thicknesses of layers in aforementioned at least three film layer is all at 50 nm
In-1000nm；In aforementioned at least three film layer, the refractive index of the film layer that thickness is 1/4 visible wavelength of film layer is between 1.35 ~ 1.7, and the thickness of film layer is that the refractive index of the film layer of 1/2 visible wavelength is between 2.0 ~ 2.4.
As a further improvement on the present invention, the one in following material of each film layer in aforementioned at least three film layer: titanium dioxide (TiO2), Afluon (Asta) (MgF2), cerium oxide (CeO2), zirconium oxide (ZrO2), cerium fluoride (CeF3), zinc sulfide (ZnS), silicon dioxide (SiO2), silicon nitride (SiNx), silicon monoxide (SiO), aluminium oxide (Al2O3), tin indium oxide (ITO), lead oxide (PbO), Dineodymium trioxide (Nd2O3), bismuth oxide (BiO3), hexafluoro close sodium aluminate (Na3AlF6), calcium fluoride (CaF2), Lead difluoride (PbF2), cerous fluoride (CeF3), zinc selenide (ZnSe).
As a further improvement on the present invention, described encapsulating film layer is four layers, including the Afluon (Asta) film layer from inside outwards set gradually, cerium fluoride film layer, ZnS-film layer, Afluon (Asta) film layer.
As a further improvement on the present invention, described Afluon (Asta) film layer, ZnS-film layer, Afluon (Asta) thicknesses of layers are identical, and cerium fluoride thicknesses of layers is two times of Afluon (Asta) thicknesses of layers.
As a further improvement on the present invention, described encapsulating film layer is three layers, including the Afluon (Asta) film layer from inside outwards set gradually, zirconium oxide film layer, cerium fluoride film layer.
As a further improvement on the present invention, described Afluon (Asta) film layer is identical with cerium fluoride thicknesses of layers, and zirconium oxide film layer thickness is two times of cerium fluoride thicknesses of layers.
As a further improvement on the present invention, described encapsulating film layer is at least four layers, including the titanium oxide film layer being arranged alternately and silica coating.
As a further improvement on the present invention, described encapsulating film layer also includes and is positioned at outermost Afluon (Asta) film layer, and described Afluon (Asta) film layer covers in titanium oxide film layer.
For realizing object defined above, the present invention can also adopt the following technical scheme that the method for packing of a kind of organic elctroluminescent device, and it comprises the following steps:
Preparation basic structure: provide a substrate, formed the first electrode layer on the substrate,
Formed organic layer on described first electrode layer, formed the second electrode lay on described organic layer；And
Form the encapsulating film layer that this basic structure is packaged, encapsulating film layer includes at least three film layer from inside outwards set gradually, in described at least three film layer, innermost layer and outermost thicknesses of layers are 1/4 visible wavelength, and from inside outwards the thickness of the second film layer is 1/2 visible wavelength；And each thicknesses of layers in aforementioned at least three film layer is all at 50 nm
In-1000nm；In aforementioned at least three film layer thickness be the refractive index of the film layer of 1/4 visible wavelength between 1.35 ~ 1.7, thickness is that the refractive index of the film layer of 1/2 visible wavelength is between 2.0 ~ 2.4.
As a further improvement on the present invention, described encapsulating film layer is four layers, including the Afluon (Asta) film layer from inside outwards sequentially formed by the way of evaporation or sputtering, cerium fluoride film layer, ZnS-film layer, Afluon (Asta) film layer.
As a further improvement on the present invention, described encapsulating film layer is three layers, including the Afluon (Asta) film layer from inside outwards set gradually by the way of evaporation or sputtering, zirconium oxide film layer, cerium fluoride film layer.
As a further improvement on the present invention, described encapsulating film layer is at least four layers, including the titanium oxide film layer being arranged alternately and silica coating.
As a further improvement on the present invention, described encapsulating film layer also includes and is positioned at outermost Afluon (Asta) film layer, and described Afluon (Asta) film layer covers in titanium oxide film layer.
As a further improvement on the present invention, described encapsulating film layer is according to the feature of selected materials, the mode film forming of selective evaporation or sputtering or CVD.
As a further improvement on the present invention, the one in following material of each film layer in aforementioned at least three film layer: titanium dioxide (TiO2), Afluon (Asta) (MgF2), cerium oxide (CeO2), zirconium oxide (ZrO2), cerium fluoride (CeF3), zinc sulfide (ZnS), silicon dioxide (SiO2), silicon nitride (SiNx), silicon monoxide (SiO), aluminium oxide (Al2O3), tin indium oxide (ITO), lead oxide (PbO), Dineodymium trioxide (Nd2O3), bismuth oxide (BiO3), hexafluoro close sodium aluminate (Na3AlF6), calcium fluoride (CaF2), Lead difluoride (PbF2), cerous fluoride (CeF3), zinc selenide (ZnSe).
The encapsulating film layer of organic elctroluminescent device of the present invention includes at least two film layer from inside outwards set gradually, and each thicknesses of layers is all in 50 nm-1000nm, reflectance drops to the lowest, add absorbance, the light of all wavelengths in visible-range is not all had or the most weak microcavity effect by the encapsulating film layer after improvement, therefore for the light of different colours, need not each sub-pixel is carried out single thickness design, be conducive to thin-film package advantage in screen body, particularly push up light-emitting display device.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing organic elctroluminescent device.
Fig. 2 is dot structure schematic diagram in first embodiment of the invention.
Fig. 3 is the reflectance schematic diagram of the encapsulating film layer in first embodiment of the invention.
Fig. 4 is dot structure schematic diagram in second embodiment of the invention.
Fig. 5 is the reflectance schematic diagram of the encapsulating film layer in second embodiment of the invention.
Fig. 6 is dot structure schematic diagram in third embodiment of the invention.
Fig. 7 is the reflectance schematic diagram of the encapsulating film layer in third embodiment of the invention.
Detailed description of the invention
Shown in Figure 2, organic elctroluminescent device of the present invention includes basic structure 215 and the encapsulating film layer 219 being packaged basic structure 215.Basic structure 215 is played the effect of packaging protection by encapsulating film layer 219, it is to avoid basic structure 215 contacts with steam and oxygen.Described basic structure 215 includes: transparent substrate the 200, first electrode layer 210, organic layer 211, the second electrode lay 212, the first electrode layer 210 can be anode layer, then 212 layers of the second electrode is cathode layer.
First electrode layer 210 is to use the modes such as evaporation, sputtering to deposit ground floor electrode material to make at substrate 200, and the first electrode layer 210 can be transparent, translucent or opaque.If the first electrode layer 210 is transparent or semitransparent electrode, then the second electrode lay 212 can be transparent, translucent or opaque electrode.
If the second electrode lay 212 is transparent or semitransparent electrode, then the organic elctroluminescent device prepared is double-sided display.
If the second electrode lay 212 is opaque electrode, then the organic elctroluminescent device prepared is that the end is luminous.
If the first electrode layer 210 is opaque electrode, then the second electrode lay 212 can select to be translucent or transparency electrode, and prepared organic elctroluminescent device out is top luminescence.
The material of transparency electrode can be selected from the metal-oxide of the high work function such as tin indium oxide, Indium sesquioxide., and the material of semitransparent electrode can be selected from sheet metal, and the material of opaque electrode can combine with tin indium oxide selected from thick layer of metal or thick layer of metal.
Organic layer 211 is to be deposited on the first electrode layer 210 by methods such as ink-jet method, vacuum vapour deposition or spin coatings.Organic layer 211 includes the multiple structures such as hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer so that organic electroluminescence device reaches superior performance.Generally, organic layer 211 is including at least there being luminescent layer.
Encapsulating film layer 219 is coated with by the coating materials of titanium dioxide, silicon dioxide and Afluon (Asta) and forms, and a total of eight layers, from inside to outside, is followed successively by: titanium dioxide (TiO2) film layer 216, silicon dioxide (SiO2) film layer 217, titanium dioxide (TiO2) film layer 216, silicon dioxide (SiO2) film layer 217, titanium dioxide (TiO2) film layer 216, silicon dioxide (SiO2) film layer 217, titanium dioxide (TiO2) film layer 216, Afluon (Asta) (MgF2) film layer 218.Seven layers of the inside is by titanium dioxide (TiO2) film layer and silicon dioxide (SiO2) film layer be alternatively formed.
The method for packing employing following steps of organic elctroluminescent device of the present invention:
The first step, on substrate 200, use the mode formation of deposits ground floor electrode 210 such as evaporation, sputtering.
The methods such as second step, employing ink-jet method, vacuum vapour deposition or spin coating, depositing organic 211 on ground floor electrode 210.
3rd step, on organic layer 211 use evaporation formed second layer electrode 212.
Finally, basic structure 215 is packaged, first use the mode of sputtering, seven tunics are become successively in the way of titanium dioxide coating materials replaces with silicon dioxide coating materials, wherein, the titanium oxide film layer 216 that titanium dioxide coating materials is formed has four layers, the silica coating 217 that silicon dioxide coating materials is formed has three layers, it is formed with layer of silicon dioxide film layer 217 between the most adjacent two layers of titanium oxide film layer 216, Afluon (Asta) coating materials is formed one layer of Afluon (Asta) film layer 218 by the mode using evaporation again, Afluon (Asta) film layer 218 is positioned at outermost layer, and covers in titanium oxide film layer 216.
Titanium oxide film layer 216 is visible transparent with near infrared region, and refractive index is high, and about 2.52, film layer is fine and close, and firm stable, resistance to chemical corrosion is good.The refractive index of silica coating 217 is low, and about 1.46, bright zone extends to ultraviolet, decomposes the least, and having light, to absorb little, film layer firm, the wear-resistant advantage such as corrosion-resistant.The Performance comparision of Afluon (Asta) film layer 218 is stable, and refractive index is about 1.38, is so designed that so that the reflectance of encapsulating film layer 219 drops to relatively low.Please join shown in Fig. 3, through test, find that encapsulating film layer 219 is below 1% for the numerical value of the reflectance of visible ray, this encapsulating film layer 219 the most not or has the most weak microcavity effect to the light of all wavelengths in visible-range, therefore for the light of different colours, need not the thickness of each film layer individually designed, reduce manufacturing cost.
Material has absorption (A), reflection (R) and three kinds of binding modes of transmission (T) to light.When light is by this material layer, there is following law:
A+R+T=1,
In order to improve the transmitance of light, it is necessary to reduce material to the absorption of light and reflection.And for dielectric material, the absorption of light almost can be ignored by material, so the main method improving transmitance is to reduce reflection.
In order to make the reflectance of encapsulating film layer be preferably minimized, the present invention uses multi-layer film structure system, and thickness or refractive index to material are controlled, to reducing the purpose of reflectance.For two-layer film configuration, the thickness of every tunic is 1/4 visible wavelength.Assuming that the film layer order from air to substrate is respectively film layer 1 and film layer 2, refractive index is respectively n1And n2, the light vertical incidence of design wavelength reaches the condition of zero reflection and is:
, wherein n0And n3It is respectively air and the refractive index of substrate.
For trilamellar membrane system (the such as third embodiment of the present invention), can utilize with the identical computing formula of two membranes, one layer of λ/4 or λ/2 film layer is added in the middle of two λ/4 film systems, shown by Theoretical Calculation, add λ/2 film layer more preferable, because this film coating systems does not has the highest requirement to the refractive index of λ/2 layer, it is generally preferable to refractive index film layer between 2.0-2.4 is as λ/2 layer；Material between the preferred 1.35-1.70 of refractive index of remaining λ/4.What λ represented is visible wavelength.
In order to obtain more preferable anti-reflective effect, four tunic systems and ultra broadband antireflective film system (such as first embodiment of the invention, film layer is more than four layers) can be used.
In four tunic systems (the such as fourth embodiment of the present invention), using λ/4 and λ/2 film layer to combine, the thickness of four tunic layers can be respectively λ/4, λ/2, λ/4, λ/4.
Encapsulating film layer material can be metal-oxide, metal fluoride, metal sulfide etc., such as titanium dioxide (TiO2), Afluon (Asta) (MgF2), cerium oxide (CeO2), zirconium oxide (ZrO2), cerium fluoride (CeF3), zinc sulfide (ZnS), silicon dioxide (SiO2), silicon nitride (SiNx), silicon monoxide (SiO), aluminium oxide (Al2O3), tin indium oxide (ITO), lead oxide (PbO), Dineodymium trioxide (Nd2O3), bismuth oxide (BiO3), hexafluoro close sodium aluminate (Na3AlF6), calcium fluoride (CaF2), Lead difluoride (PbF2), cerous fluoride (CeF3), zinc selenide (ZnSe).
Encapsulating film layer according to the feature of selected materials, can in the way of selective evaporation or sputtering or CVD film forming.
Please join Fig. 4-5, in second embodiment of the invention, encapsulating film layer 219 is four layers, respectively is: Afluon (Asta) (MgF2) film layer 221, cerium fluoride (CeF3) film layer 222, zinc sulfide (ZnS) film layer 223, Afluon (Asta) (MgF2) film layer 224.Afluon (Asta) (MgF2) film layer, cerium fluoride (CeF3) film layer, zinc sulfide (ZnS) film layer, the thickness of Afluon (Asta) (MgF2) film layer can be respectively λ/4, λ/2, λ/4, λ/4, cerium fluoride (CeF3) thickness is other three thicknesses of layers two times of film layer.
Please join Fig. 6-7, in third embodiment of the invention, encapsulating film layer 219 is three layers, respectively is: Afluon (Asta) (MgF2) film layer 231, zirconium oxide (ZrO2) film layer 232, cerium fluoride (CeF3) film layer 233.Afluon (Asta) (MgF2) film layer, zirconium oxide (ZrO2) film layer, cerium fluoride (CeF3) thicknesses of layers is respectively λ/4, λ/2, λ/4.Zirconium oxide (ZrO2) thickness of film layer is Afluon (Asta) (MgF2) film layer or cerium fluoride (CeF3) two times of thicknesses of layers.
All embodiments of the invention all include at least two film layer from inside outwards set gradually, and each thicknesses of layers is all in 50 nm-1000nm, encapsulating film layer drops to the lowest (i.e. less than 10%) for the reflectance of visible ray, add absorbance, therefore for the light of different colours, need not each sub-pixel is carried out single thickness design, greatly simplify encapsulation, and then be substantially reduced production cost.
Although being example purpose, have been disclosed for the preferred embodiment of the present invention, but those of ordinary skill in the art is it will be appreciated that in the case of without departing from by scope and spirit of the present invention disclosed in appending claims, various improvement, to increase and replace be possible.
Claims (15)
1. an organic elctroluminescent device, it includes basic structure (215) and the encapsulating film layer (219) being packaged basic structure (215), basic structure include set gradually substrate, the first electrode layer, organic layer, the second electrode lay, it is characterized in that: described encapsulating film layer (219) includes at least three film layer from inside outwards set gradually, in described at least three film layer, innermost layer and outermost thicknesses of layers are 1/4 visible wavelength, and from inside outwards the thickness of the second film layer is 1/2 visible wavelength；And each thicknesses of layers in aforementioned at least three film layer is all in 50 nm-1000nm；In aforementioned at least three film layer thickness be the refractive index of the film layer of 1/4 visible wavelength between 1.35 ~ 1.7, thickness is that the refractive index of the film layer of 1/2 visible wavelength is between 2.0 ~ 2.4.
Organic elctroluminescent device the most according to claim 1, the material of each film layer in aforementioned at least three film layer one in following material: titanium dioxide (TiO2), Afluon (Asta) (MgF2), cerium oxide (CeO2), zirconium oxide (ZrO2), cerium fluoride (CeF3), zinc sulfide (ZnS), silicon dioxide (SiO2), silicon nitride (SiNx), silicon monoxide (SiO), aluminium oxide (Al2O3), tin indium oxide (ITO), lead oxide (PbO), Dineodymium trioxide (Nd2O3), bismuth oxide (BiO3), hexafluoro close sodium aluminate (Na3AlF6), calcium fluoride (CaF2), Lead difluoride (PbF2), cerous fluoride (CeF3), zinc selenide (ZnSe).
Organic elctroluminescent device the most according to claim 1, it is characterised in that: described encapsulating film layer is four layers, including the Afluon (Asta) film layer from inside outwards set gradually, cerium fluoride film layer, ZnS-film layer, Afluon (Asta) film layer.
Organic elctroluminescent device the most according to claim 3, it is characterised in that: described Afluon (Asta) film layer, ZnS-film layer, Afluon (Asta) thicknesses of layers are identical, and cerium fluoride thicknesses of layers is two times of Afluon (Asta) thicknesses of layers.
Organic elctroluminescent device the most according to claim 1, it is characterised in that: described encapsulating film layer is three layers, including the Afluon (Asta) film layer from inside outwards set gradually, zirconium oxide film layer, cerium fluoride film layer.
Organic elctroluminescent device the most according to claim 5, it is characterised in that: described Afluon (Asta) film layer is identical with cerium fluoride thicknesses of layers, and zirconium oxide film layer thickness is two times of cerium fluoride thicknesses of layers.
Organic elctroluminescent device the most according to claim 1, it is characterised in that: described encapsulating film layer is at least four layers, including the titanium oxide film layer being arranged alternately and silica coating.
Organic elctroluminescent device the most according to claim 7, it is characterised in that: described encapsulating film layer also includes and is positioned at outermost Afluon (Asta) film layer, and described Afluon (Asta) film layer covers in titanium oxide film layer.
9. a method for packing for organic elctroluminescent device, it comprises the following steps:
Preparation basic structure (215): provide a substrate, formed the first electrode layer on the substrate,
Formed organic layer on described first electrode layer, formed the second electrode lay on described organic layer；And
Form the encapsulating film layer (219) that this basic structure is packaged, encapsulating film layer includes at least three film layer from inside outwards set gradually, in described at least three film layer, innermost layer and outermost thicknesses of layers are 1/4 visible wavelength, and from inside outwards the thickness of the second film layer is 1/2 visible wavelength；And each thicknesses of layers in aforementioned at least three film layer is all in 50 nm-1000nm；In aforementioned at least three film layer thickness be the refractive index of the film layer of 1/4 visible wavelength between 1.35 ~ 1.7, thickness is that the refractive index of the film layer of 1/2 visible wavelength is between 2.0 ~ 2.4.
The method for packing of organic elctroluminescent device the most according to claim 9, it is characterized in that: described encapsulating film layer is four layers, including the Afluon (Asta) film layer from inside outwards sequentially formed by the way of evaporation or sputtering, cerium fluoride film layer, ZnS-film layer, Afluon (Asta) film layer.
The method for packing of 11. organic elctroluminescent devices according to claim 9, it is characterized in that: described encapsulating film layer is three layers, including the Afluon (Asta) film layer from inside outwards set gradually by the way of evaporation or sputtering, zirconium oxide film layer, cerium fluoride film layer.
The method for packing of 12. organic elctroluminescent devices according to claim 9, it is characterised in that: described encapsulating film layer is at least four layers, including the titanium oxide film layer being arranged alternately and silica coating.
The method for packing of 13. organic elctroluminescent devices according to claim 12, it is characterised in that: described encapsulating film layer also includes and is positioned at outermost Afluon (Asta) film layer, and described Afluon (Asta) film layer covers in titanium oxide film layer.
The method for packing of 14. organic elctroluminescent devices according to claim 9, it is characterised in that: described encapsulating film layer is according to the feature of selected materials, the mode film forming of selective evaporation, sputtering or CVD.
The method for packing of 15. organic elctroluminescent devices according to claim 9, it is characterised in that: the one in following material of each film layer in aforementioned at least three film layer: titanium dioxide (TiO2), Afluon (Asta) (MgF2), cerium oxide (CeO2), zirconium oxide (ZrO2), cerium fluoride (CeF3), zinc sulfide (ZnS), silicon dioxide (SiO2), silicon nitride (SiNx), silicon monoxide (SiO), aluminium oxide (Al2O3), tin indium oxide (ITO), lead oxide (PbO), Dineodymium trioxide (Nd2O3), bismuth oxide (BiO3), hexafluoro close sodium aluminate (Na3AlF6), calcium fluoride (CaF2), Lead difluoride (PbF2), cerous fluoride (CeF3), zinc selenide (ZnSe).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110432003.9A CN103178077B (en) | 2011-12-21 | 2011-12-21 | Organic elctroluminescent device and method for packing thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110432003.9A CN103178077B (en) | 2011-12-21 | 2011-12-21 | Organic elctroluminescent device and method for packing thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103178077A CN103178077A (en) | 2013-06-26 |
| CN103178077B true CN103178077B (en) | 2016-08-24 |
Family
ID=48637830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110432003.9A Active CN103178077B (en) | 2011-12-21 | 2011-12-21 | Organic elctroluminescent device and method for packing thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103178077B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985821A (en) * | 2014-05-30 | 2014-08-13 | 云南北方奥雷德光电科技股份有限公司 | Film sealing process for top-emission OLED displayer |
| CN108563361B (en) * | 2018-04-23 | 2021-11-09 | 京东方科技集团股份有限公司 | Touch display panel, driving method thereof and touch display device |
| CN110752308A (en) * | 2018-07-24 | 2020-02-04 | Tcl集团股份有限公司 | Isolating film, top-emitting photoelectric device and manufacturing method and application thereof |
| CN111384283B (en) * | 2018-12-29 | 2021-07-02 | Tcl科技集团股份有限公司 | Laminated structure and preparation method thereof, light-emitting diode and preparation method thereof |
| CN110283561B (en) * | 2019-05-30 | 2021-09-10 | 天津德高化成科技有限公司 | Packaging resin composition for LED display screen patch type discrete device and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1484330A (en) * | 2002-09-16 | 2004-03-24 | 铼德科技股份有限公司 | Multi-layer reflection film and preparation process thereof |
| CN1582504A (en) * | 2001-11-06 | 2005-02-16 | 通用显示有限公司 | Encapsulation structure that acts as a multilayer mirror |
| CN101599536A (en) * | 2008-06-05 | 2009-12-09 | 三星移动显示器株式会社 | Organic light emitting diode display device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100540179B1 (en) * | 2003-08-28 | 2006-01-10 | 한국과학기술연구원 | Inorganic thin layer and electroluminescence device comprising the same |
| KR101089715B1 (en) * | 2009-11-05 | 2011-12-07 | 한국기계연구원 | Multi layer thin film for encapsulation and the method thereof |
-
2011
- 2011-12-21 CN CN201110432003.9A patent/CN103178077B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1582504A (en) * | 2001-11-06 | 2005-02-16 | 通用显示有限公司 | Encapsulation structure that acts as a multilayer mirror |
| CN1484330A (en) * | 2002-09-16 | 2004-03-24 | 铼德科技股份有限公司 | Multi-layer reflection film and preparation process thereof |
| CN101599536A (en) * | 2008-06-05 | 2009-12-09 | 三星移动显示器株式会社 | Organic light emitting diode display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103178077A (en) | 2013-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103178077B (en) | Organic elctroluminescent device and method for packing thereof | |
| TWI441790B (en) | A light-transmitting substrate, a method for manufacturing the same, an organic LED device, and a method for manufacturing the same | |
| CN100576599C (en) | The organic, electro-optical element that the extraction efficiency of increase is arranged | |
| TW201615414A (en) | Quantum dot protective film, quantum dot film using same, and backlight unit | |
| CN101809778B (en) | Opto-electronic device | |
| WO2007114256A1 (en) | Organic electroluminescence multicolor display panel | |
| WO2012057043A1 (en) | Organic el device, translucent substrate, and method for manufacturing organic el device | |
| TWI506836B (en) | Transparent conducting film and organic light emitting device comprising the same | |
| CN103151468B (en) | A kind of Organic Light Emitting Diode and preparation method thereof, display unit | |
| CN103730598A (en) | Organic light-emitting device and preparation method thereof | |
| CN104051671A (en) | OLED display device and manufacturing method thereof | |
| CN104106310B (en) | Organic electroluminescent device | |
| CN111354868B (en) | Light emitting device using light emitting diode | |
| WO2020082478A1 (en) | Oled display panel | |
| CN110416258B (en) | Display device and manufacturing method thereof | |
| CN113629206A (en) | Display panel and display device | |
| JP6198561B2 (en) | Metal oxide thin film substrate for organic light emitting device and manufacturing method thereof | |
| JP2018098134A (en) | Light transmission type organic electroluminescent panel and organic electroluminescence light-source device | |
| US9711762B2 (en) | Substrate for organic light-emitting diode, method for manufacturing same, and organic light-emitting diode comprising same | |
| CN205016566U (en) | Organic luminescence display device | |
| JP2007294438A (en) | Organic el element | |
| CN103730597A (en) | Organic light-emitting device and preparation method thereof | |
| CN107863446B (en) | A kind of OLED device structure and preparation method | |
| CN209947840U (en) | Silicon-based electroluminescent display panel and display device | |
| KR20180033707A (en) | Substrate for organic electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |