CN103177918B - A kind of magnetron and plasma processing device - Google Patents
A kind of magnetron and plasma processing device Download PDFInfo
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- CN103177918B CN103177918B CN201110448612.3A CN201110448612A CN103177918B CN 103177918 B CN103177918 B CN 103177918B CN 201110448612 A CN201110448612 A CN 201110448612A CN 103177918 B CN103177918 B CN 103177918B
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Abstract
The present invention provides a kind of magnetron and plasma processing device, described magnetron includes opposite polarity internal magnetic pole and outer magnetic pole, described internal magnetic pole nests together the most non-contiguously with described outer magnetic pole, and described internal magnetic pole and outer magnetic pole shape on its radial section are helix.This magnetron can improve the utilization rate of target, is possible not only to reduce plasma processing device production cost, and can improve the production efficiency of plasma processing device.
Description
Technical field
The invention belongs to plasma processing device field, relate to a kind of magnetron and apply the plasma of this magnetron
Process equipment.
Background technology
Magnetically controlled DC sputtering technology is to prepare the common technology of semiconductor integrated circuit, and it is to make gas electricity at low pressure
From forming plasma, then the magnetic field by target material surface makes the charged particle in plasma clash into target material surface, so that
Target sputters, and in sputtering particle, neutral target atom is deposited on the workpiece to be machined surfaces such as wafer and forms thin film.
Fig. 1 is the structure diagram of typical magnetron sputtering apparatus.As it is shown in figure 1, magnetron sputtering apparatus includes reaction chamber
1, vacuum pump 2 and gas source 4.Wherein, vacuum pump 2 connects with the bottom of reaction chamber 1, internal in order to regulate reaction chamber 1
Gas pressure.Gas source 4 is connected with reaction chamber 1 by pipeline, is provided with for controlling between gas source 4 and reaction chamber 1
The gas flowmeter 3 of reaction gas flow processed.The electrostatic chuck 5 in order to bearing wafer it is provided with, instead in the bottom of reaction chamber 1
The position answering the top of chamber 1 relative with electrostatic chuck 5 is provided with target 6.Being also arranged above for improving sputtering speed at target 6
The magnetron 9 of rate, magnetron 9 scans the surface of target 6 under the driving of motor 12.
Fig. 2 is the plan view of typical magnetron.Referring to Fig. 2, magnetron 9 includes the internal magnetic pole 91 of kidney shape and outer magnetic
Pole 92, internal magnetic pole 91 is nested in outer magnetic pole 92, and, internal magnetic pole 91 and the opposite polarity of outer magnetic pole 92.Utilize typical magnetic
Keyholed back plate scanning target, the corrosion of target is the most uneven.When Fig. 3 is to utilize typical magnetron scanning target, the corrosion of target is bent
Line.In figure, abscissa represents that target center arrives the radius of the distance of target rim, i.e. target；Vertical coordinate represents the corrosion of target
The degree of depth.Knowable to the corrosion curve of Fig. 3, the corrosion of 132,134,136,138 position targets is relatively deep, and 136 position targets
Corrosion is especially serious, and therefore, typical magnetron causes the corrosion of target uneven, and the utilization rate of target is relatively low.
Summary of the invention
For solving above-mentioned technical problem, the present invention provides a kind of magnetron and applies the plasma process of this magnetron to set
Standby, it can make target homogeneous corrosion, thus improves the utilization rate of target.
Solve above-mentioned technical problem be employed technical scheme comprise that a kind of magnetron of offer, including opposite polarity interior magnetic
Pole and outer magnetic pole, described internal magnetic pole nests together the most non-contiguously with described outer magnetic pole, and described internal magnetic pole and outer magnetic pole exist
Shape on its radial section is helix.
Preferably, described internal magnetic pole and outer magnetic pole shape on its radial section are satisfied by formula (1),
θ=r-arctan (r) (1)
In formula, θ represents the radian of distance helix starting point；
R represents the distance of distance helix central point.
Preferably, described internal magnetic pole includes internal magnetic pole body and the multiple Magnet being arranged on described internal magnetic pole body, institute
State the Magnet camber line spread configuration along described internal magnetic pole body；Described outer magnetic pole includes outer magnetic pole body and is arranged on described outer magnetic
Multiple Magnet on the body of pole, described Magnet is along the camber line spread configuration of described outer magnetic pole body.
Preferably, the described Magnet being arranged on described internal magnetic pole body uniformly divides along the camber line of described internal magnetic pole body
Cloth；The described Magnet being arranged on described outer magnetic pole body is uniformly distributed along the camber line of described outer magnetic pole body.
Preferably, described Magnet is the Magnet of column, and described Magnet is embedded in described internal magnetic pole body and described outer magnetic pole
This is internal.
Preferably, at described outer magnetic pole in the radial direction, the width of the inner end of described outer magnetic pole body is more than described
The width of the outer end of outer magnetic pole body；Or at described internal magnetic pole in the radial direction, the inner end of described internal magnetic pole body
Width more than the width of outer end of described internal magnetic pole body.
Preferably, on described outer magnetic pole cross section radially, the outer end Guan Bi of described outer magnetic pole, so that described internal magnetic pole
It is nested in described outer magnetic pole.
Preferably, the rotary shaft of magnetron is inner end place straight of the axis of symmetry of described outer magnetic pole or described outer magnetic pole
Line.
Preferably, the spacing of described outer magnetic pole and described internal magnetic pole is 0.5～1.5 inch.
Preferably, the spacing of described outer magnetic pole and described internal magnetic pole is adjusted according to actual target erosion result.
The present invention also provides for a kind of plasma processing device, described including reaction chamber, target, magnetron and driving
The driver part that magnetron rotates, described target is arranged on the top of described reaction chamber, and described magnetron is arranged on described target
The top of material, under the driving of described driver part, described magnetron is at the surface rotation sweep of described target, described magnetron
Use the described magnetron that the present invention provides.
The method have the advantages that
The magnetron that the present invention provides uses spiral line type structure, i.e. described internal magnetic pole and outer magnetic pole are at its radial section
On be shaped as helix, it can make the corrosion of target evenly so that the utilization rate of target brings up to about 58%, with
Time can reduce the time changed needed for target, and then reduce production cost.
The plasma processing device that the present invention provides, due to the magnetron of spiral line type structure, makes the corrosion of target more
Uniformly, so that the utilization rate of target brings up to about 58%, this not only lowers plasma processing device production cost, and
And decrease the time changed needed for target, such that it is able to improve the production efficiency of plasma processing device.
Accompanying drawing explanation
Fig. 1 is the structure diagram of typical magnetron sputtering apparatus；
Fig. 2 is the plan view of typical magnetron；
The corrosion curve of target when Fig. 3 is to utilize typical magnetron scanning target；
Fig. 4 is the plan view of embodiment of the present invention magnetron；
Fig. 5 is the schematic diagram of helix of the present invention
Fig. 6 is that the plane being arranged on internal magnetic pole body and outer magnetic pole body uneven for Magnet is regarded by the embodiment of the present invention
Figure；
The simulation corrosion curve of target when Fig. 7 is to utilize embodiment of the present invention magnetron scanning target material surface；And
Fig. 8 is the plan view of magnetron in variant embodiment of the present invention.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with the accompanying drawings the present invention is carried
Magnetron and the plasma processing device of confession are described in detail.
Fig. 4 is the plan view of embodiment of the present invention magnetron.Referring to Fig. 4, magnetron includes opposite polarity interior magnetic
Pole 91 and outer magnetic pole 92, internal magnetic pole 91 and outer magnetic pole 92 mutually nest together non-contiguously.Internal magnetic pole 91 and outer magnetic pole 92 exist
Shape on magnetron cross section (being i.e. perpendicular to the cross section of magnetron axis) radially is helix, i.e. the present embodiment magnetron
For helical magnetic control pipe.Relative to existing magnetron, such as kidney type magnetron or class helical magnetic control pipe, the present embodiment helical magnetic control pipe
Due to smoother, target can be made to obtain uniform magnetic field during scanning target, such that it is able to improve target erosion
Uniformity.
Preferably, internal magnetic pole 91 and the outer magnetic pole 92 shape on magnetron radial section are satisfied by formula (1), change speech
It, helix meets formula (1),
θ=r-arctan (r) (1)
In formula, θ represents and the radian from helix starting point；
R represents the distance of distance helix central point.
Fig. 5 is the schematic diagram of helix of the present invention.Wherein, coordinate central point is the central point of helix, and helix initiates
Point is the position of maximum curvature on helix.Internal magnetic pole 91 and the outer magnetic pole 92 shape on its radial section are as shown in Figure 5.
In the present embodiment, the difference of internal magnetic pole 91 and outer magnetic pole 92 is: internal magnetic pole 91 and outer magnetic pole 92 turn over
Radian different, and internal magnetic pole 91 is different with the position of the inner end of outer magnetic pole 92.As shown in Figure 4, the outer end of outer magnetic pole 92
Portion closes, and internal magnetic pole 91 is nested in outer magnetic pole 92 completely, makes internal magnetic pole 91 and outer magnetic pole 92 form enclosed region, i.e. defines
The electronics constraint region of Guan Bi, thus improve the ability of magnetic field bound electron, and then starter can be made to be more prone to.
Referring to Fig. 4, internal magnetic pole 91 includes internal magnetic pole body 91a and multiple Magnet 40a, and Magnet 40a is along internal magnetic pole body
The camber line of 91a is uniformly distributed, i.e. by inner end evenly distributed setting to outer end of internal magnetic pole body 91a.Similarly, outer magnetic pole
92 include outer magnetic pole body 92a and multiple Magnet 40b, and Magnet 40b is distributed, i.e. by outer magnetic pole along the camber line of outer magnetic pole body 92a
The inner end of body 92a is evenly distributed setting to outer end.
The present embodiment, internal magnetic pole body 91a and outer magnetic pole body 92a use permeability magnetic material to make, and are arranged on interior magnetic
The opposite polarity of the Magnet 40a on the body 91a of pole and the Magnet 40b being arranged on outer magnetic pole body 92a, as being arranged on internal magnetic pole
The S pole of the Magnet 40 on body 91a towards reader, the N pole of the Magnet 40 being arranged on outer magnetic pole body 92a towards reader, from
And make internal magnetic pole 91 and outer magnetic pole 92 obtain opposite polarity magnetic field, permissible by opposite polarity internal magnetic pole 91 and outer magnetic pole 92
The plasma of constraint target material surface.
Although it should be noted that the internal magnetic pole 91 of the present embodiment magnetron is by internal magnetic pole body 91a and Magnet 40a group
Become, but the invention is not limited in this.The internal magnetic pole 91 of magnetron can also directly use Magnet to be made, and i.e. uses one
The Magnet identical with internal magnetic pole body 91a shape is as internal magnetic pole 91.Similarly, the outer magnetic pole 92 of the present embodiment magnetron be by
Outer magnetic pole body 92a and Magnet 40b composition, but the invention is not limited in this.The outer magnetic pole 92 of magnetron can also directly be adopted
It is made with Magnet, i.e. uses a Magnet identical with outer magnetic pole body 92a shape as outer magnetic pole 92.
In the present embodiment, Magnet 40a is uniformly distributed along the camber line of internal magnetic pole body 91a, and Magnet 40b is along outer magnetic pole body
The camber line of 92a is uniformly distributed, and to improve the density of plasma, increases magnetic field intensity, such that it is able to improve the stability of sputtering.
It is appreciated that in actual use, it is also possible to according to technological requirement, density is set on internal magnetic pole body 91a
Different Magnet 40a, i.e. Magnet 40a can also uneven setting between the inner end of internal magnetic pole body 91a to outer end.
In like manner, Magnet 40b can also uneven setting between the inner end of outer magnetic pole body 92a to outer end.As shown in Figure 6, Fig. 6
For the embodiment of the present invention by the plan view being arranged on internal magnetic pole body and outer magnetic pole body uneven for Magnet.
In the present embodiment, Magnet 40a is embedded in internal magnetic pole body 91a, and Magnet 40b is embedded in outer magnetic pole body 92a.
Certainly, Magnet 40a can also be close to the surface configuration of internal magnetic pole body 91a, and in like manner, Magnet 40b can also be close to outer magnetic pole originally
The surface configuration of body 92a.The quantity of Magnet 40a, 40b and distribution density can be adjusted according to the magnetic field intensity needed for magnetron
Joint.
It addition, internal magnetic pole body 91a is at 1～2 times that the width of its radial direction can be Magnet 40a diameter, outer magnetic pole
Body 92a is 1～2 times that the width of its radial direction can be Magnet 40b diameter.By regulation internal magnetic pole body 91a with outer
Magnetic pole body 92a can reach to regulate the purpose of the magnetic field intensity of magnetron at the width of its radial direction.
The simulation corrosion curve of target when Fig. 7 is to utilize embodiment of the present invention magnetron scanning target material surface.In figure, horizontal
Coordinate representation target center is to the radius of the distance of target rim, i.e. target, unit: centimetre (cm)；Vertical coordinate represents target
The relatively corrosive degree of depth.As it is shown in fig. 7, it can be seen that the corrosion of target entirety is highly uniform from corrosion curve, this makes novel
The more conventional design of design of magnetron has target erosion evenly and higher target utilization.Although, target erosion is bent
Line center-region erosion degree is higher, but by reducing the Magnet density of central area or can reduce the inside and outside magnetic of central area
The modes such as die opening reduce the magnetic field intensity of central area, thus reduce its extent of corrosion.
It is preferred that embodiment adds the inner end of outer magnetic pole body 92a width in the radial direction thereof, i.e. make
The width of the width of the inner end of the outer magnetic pole body 92a outer end more than outer magnetic pole body 92a, to reduce magnetron center district
The magnetic field intensity in territory, such that it is able to reduce the corrosion of target center position, and then improves the uniformity of target erosion, improves target
Utilization rate.It can be appreciated that the width that the inner end of the present embodiment increase internal magnetic pole body 91a is in the radial direction thereof, i.e. make
The width of the width of the inner end of the internal magnetic pole body 91a outer end more than internal magnetic pole body 91a, is equally reached reduction magnetic
The purpose of the magnetic field intensity of keyholed back plate central area.
In the present embodiment, the spacing in magnetic pole 91 and outer magnetic pole 92 is adjusted according to actual target erosion result, e.g., interior
The spacing of magnetic pole 91 and outer magnetic pole 92 is 0.5～1.5 inch, preferably 1 inch, and this can make starter and maintain plasma more
Add easily.In actual use, can using the axis of symmetry of outer magnetic pole 92 as the rotary shaft of magnetron, it is of course also possible to
Using the straight line at the inner end place of outer magnetic pole as the rotary shaft of magnetron, magnetron can be adjusted according to the corrosion condition of target
The position of rotary shaft.
The magnetron that the present embodiment provides uses spiral line type structure, i.e. described internal magnetic pole and outer magnetic pole radially cut at it
Being shaped as helix on face, it can make the corrosion of target evenly, and measuring and understanding the utilization rate of target is about 58%.This
It is possible not only to improve the utilization rate of target, and the time changed needed for target can be reduced, and then reduce production cost, improve
Production efficiency.
As the modification of above-described embodiment, Fig. 8 shows the plan view of magnetron in variant embodiment.As shown in Figure 8,
In the present embodiment, the outer end of outer magnetic pole 92 is Open architecture, i.e. internal magnetic pole 91 is the most fully surrounded by outer magnetic pole 92.Separately
Outward, the inner end of outer magnetic pole body 92a is in the outer end of width in the radial direction and the outer magnetic pole body 92a of outer magnetic pole 92
Width is identical.In addition, variant embodiment is identical with the further feature of above-described embodiment, repeats no more here.Through simulation meter
Calculating, when utilizing the magnetron scanning target material surface of variant embodiment, the corrosion curve of target is similar to Fig. 7.This variant embodiment
In magnetron be equally reached improve target utilization rate.
The present embodiment also provides for a kind of plasma processing device, and it includes reaction chamber, target, magnetron and driving
The driver part that described magnetron rotates, target is arranged on the top of reaction chamber, and magnetron is arranged on the top of target, is driving
Under the driving of dynamic component, magnetron is at the surface scan of target, and wherein magnetron uses the magnetron described in above-described embodiment.
The present embodiment plasma processing device, owing to using the magnetron described in above-described embodiment, makes the corrosion of target more
Uniformly, thus improve the utilization rate of target, this not only lowers plasma processing device production cost, and decrease more
Change the time needed for target, such that it is able to improve the production efficiency of plasma processing device.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the exemplary enforcement that uses
Mode, but the invention is not limited in this.For those skilled in the art, in the essence without departing from the present invention
In the case of god and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (8)
1. a magnetron, including opposite polarity internal magnetic pole and outer magnetic pole, described internal magnetic pole does not connects with described outer magnetic pole
Contact to earth and nest together, it is characterised in that described internal magnetic pole and outer magnetic pole shape on its radial section are helix；Institute
Stating internal magnetic pole and include internal magnetic pole body and the multiple Magnet being arranged on described internal magnetic pole body, described Magnet is along described internal magnetic pole
The camber line spread configuration of body；Described outer magnetic pole includes outer magnetic pole body and the multiple magnetic being arranged on described outer magnetic pole body
Ferrum, described Magnet along the camber line spread configuration of described outer magnetic pole body, and
At described outer magnetic pole in the radial direction, the width of the inner end of described outer magnetic pole body is more than described outer magnetic pole body
The width of outer end；Or at described internal magnetic pole in the radial direction, the width of the inner end of described internal magnetic pole body is more than institute
State the width of the outer end of internal magnetic pole body, in order to reduce the magnetic field intensity of central area.
Magnetron the most according to claim 1, it is characterised in that the described Magnet edge being arranged on described internal magnetic pole body
The camber line of described internal magnetic pole body is uniformly distributed；The described Magnet being arranged on described outer magnetic pole body is along described outer magnetic pole body
Camber line be uniformly distributed.
Magnetron the most according to claim 1 and 2, it is characterised in that described Magnet is the Magnet of column, described Magnet is inlayed
It is embedded in described internal magnetic pole body and described outer magnetic pole is the most internal.
Magnetron the most according to claim 1, it is characterised in that on the cross section of described outer magnetic pole radial direction, described outer magnetic
The outer end Guan Bi of pole, so that described internal magnetic pole is nested in described outer magnetic pole.
Magnetron the most according to claim 1, it is characterised in that the rotary shaft of magnetron is the axis of symmetry of described outer magnetic pole
Or the straight line at the inner end place of described outer magnetic pole.
Magnetron the most according to claim 1, it is characterised in that the spacing of described outer magnetic pole and described internal magnetic pole is 0.5
～1.5 inches.
Magnetron the most according to claim 1, it is characterised in that by reducing the described internal magnetic pole of central area and described
The spacing of outer magnetic pole reduces the magnetic field intensity of central area.
8. a plasma processing device, including reaction chamber, target, magnetron and drive what described magnetron rotated to drive
Dynamic component, described target is arranged on the top of described reaction chamber, and described magnetron is arranged on the top of described target, described
Under the driving of driver part, described magnetron is at the surface rotation sweep of described target, it is characterised in that described magnetron uses
Magnetron described in claim 1-7 any one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110448612.3A CN103177918B (en) | 2011-12-26 | 2011-12-26 | A kind of magnetron and plasma processing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110448612.3A CN103177918B (en) | 2011-12-26 | 2011-12-26 | A kind of magnetron and plasma processing device |
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| CN103177918A CN103177918A (en) | 2013-06-26 |
| CN103177918B true CN103177918B (en) | 2016-08-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI819294B (en) * | 2020-04-24 | 2023-10-21 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor processing equipment and magnetron mechanism |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1997768A (en) * | 2005-01-05 | 2007-07-11 | 应用材料股份有限公司 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4995958A (en) * | 1989-05-22 | 1991-02-26 | Varian Associates, Inc. | Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile |
| JPH09310174A (en) * | 1996-05-21 | 1997-12-02 | Anelva Corp | Sputtering device |
| US6183614B1 (en) * | 1999-02-12 | 2001-02-06 | Applied Materials, Inc. | Rotating sputter magnetron assembly |
| US7513982B2 (en) * | 2004-01-07 | 2009-04-07 | Applied Materials, Inc. | Two dimensional magnetron scanning for flat panel sputtering |
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2011
- 2011-12-26 CN CN201110448612.3A patent/CN103177918B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1997768A (en) * | 2005-01-05 | 2007-07-11 | 应用材料股份有限公司 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI819294B (en) * | 2020-04-24 | 2023-10-21 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor processing equipment and magnetron mechanism |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |