CN103173725A - Microstructure processing method - Google Patents
Microstructure processing method Download PDFInfo
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- CN103173725A CN103173725A CN2011104409606A CN201110440960A CN103173725A CN 103173725 A CN103173725 A CN 103173725A CN 2011104409606 A CN2011104409606 A CN 2011104409606A CN 201110440960 A CN201110440960 A CN 201110440960A CN 103173725 A CN103173725 A CN 103173725A
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- evaporation
- evaporation source
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- microstructure
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Abstract
The invention provides a method for processing a microstructure made of metamaterials. The method comprises the following the steps: by using an evaporation coating device, setting a metamaterial substrate in front of an evaporation source, and setting an evaporation substance on the evaporation source, wherein a patterned mask plate is attached to the metamaterial substrate; then, pumping a vacuum chamber of the evaporation coating device into a high vacuum; heating the evaporation source, and after a preset temperature reaches, carrying out disconnection in a scheduled time; and finally, removing the mask plate from the metamaterial substrate so as to obtain the required metal microstructure. Through processing microstructures according to the method disclosed by the invention, the binding force of a copper foil and a substrate can be greatly improved, the application amount of copper metal can be greatly saved, and the mass processing production of metamaterials can be performed efficiently.
Description
[technical field]
The present invention relates to super Material Field, relate in particular to a kind of method for processing microstructure of super material.
[background technology]
Super material refers to artificial composite structure or the matrix material that some have the not available extraordinary physical properties of natural materials.Structurally ordered design by on the key physical yardstick of material can break through the restriction of some apparent natural law, thereby maybe must exceed the meta-materials function of the intrinsic common character of nature.Super material character and function mainly come from its inner structure but not consist of their material, therefore are design and synthetic super material, and people have carried out a lot of research work.Super material comprises man-made structures and the accompanying material of man-made structures, this attachment material is played a supporting role to man-made structures, therefore can be any material different from man-made structures, the stack meeting of this bi-material produces an effective dielectric constant and magnetic permeability in the space, and these two physical parameters corresponding respectively electric field response and the magnetic responsiveness of material.
The microstructure of super material processing at present is all the method that adopts the chemical etching of circuit card, and between the on-chip Copper Foil that this method is used and substrate, bonding force is poor.
A kind of new method for processing microstructure need to be provided, can improve the bonding force between on-chip Copper Foil and substrate.
[summary of the invention]
The invention provides a kind of method for processing microstructure, take the mode of evaporation coating to come processing micro structure, can greatly improve the bonding force of Copper Foil and substrate and greatly save the consumption of copper metal, and the high-level efficiency mass processing that surpasses material in enormous quantities.
Evaporation coating refers to make it be deposited on solid surface by certain material of heating evaporation.Evaporated material such as metal, compound etc. are placed in crucible or hang on heated filament as evaporation source, and workpiece to be plated is placed in crucible the place ahead as substrates such as metal, pottery, plastics.After system was evacuated to high vacuum, heating crucible made material evaporation wherein.Atom or the molecule of evaporated material are deposited on substrate surface with condensing mode.Film thickness can be by hundreds of dusts to several microns.Thickness is decided by vaporator rate and the time of evaporation source, or is decided by charge amount, and with the distance dependent of source and substrate.For large-area coating film, often adopt the mode of rotary substrate or multi-vaporizing-source to guarantee the homogeneity of thicknesses of layers.Distance from the evaporation source to the substrate should be less than vapour molecule the mean free path in residual gas, in order to avoid vapour molecule and residual gas molecular impact cause chemical action.
Evaporation source can be used three types.One is the resistive heating source: make boat paper tinsel or thread with refractory metal such as tungsten, tantalum, pass to electric current, heat above it or evaporated material that be placed in crucible, the resistive heating source is mainly used in evaporating the materials such as Cd, Pb, Ag, Al, Cu, Cr, Au, Ni.It two is the high-frequency induction heating source: with high frequency induction current heating crucible and evaporated material.It is three for electron beam heating: be applicable to the higher material of vaporization temperature, namely make its evaporation with the beam bombardment material.
Evaporation coating is compared with other vacuum coating methods, has higher sedimentation rate, can be coated with simple substance and the compound film that is difficult for thermolysis.
According to a main aspect of the present invention, a kind of method for processing microstructure is provided, the method is utilized evaporation coating device, comprises the following steps:
A, obtain super material base;
B, obtain the mask plate of patterning;
C, the mask plate of patterning is covered on super material base;
D, will surpass material base and be placed on evaporation source the place ahead, and evaporated material will be placed on evaporation source;
E, the vacuum chamber of evaporation coating device is pumped into high vacuum;
F, make evaporation source be heated to preset temperature to evaporate, stop evaporation after the scheduled time;
G, throw off mask plate from super material base and namely obtain needed metal micro structure.
2, according to claim 1 method is characterized in that super material base is epoxy resin substrate, ceramic substrate or ferroelectrics substrate.
According to an aspect of the present invention, evaporated material comprises copper sheet, silver strip, gold plaque.
According to an aspect of the present invention, metal micro structure comprises the microstructure unit of a plurality of array arrangements, and microstructure unit is I shape or I-shaped derivative type metal wire structure.
According to an aspect of the present invention, metal micro structure comprises the microstructure unit of a plurality of array arrangements, and microstructure unit is the ring-like or split ring derivative type metal wire structure of opening.
According to an aspect of the present invention, utilize electronic beam photetching process to prepare the mask of patterning.
According to an aspect of the present invention, evaporation source is resistive heating source or high-frequency induction heating source or electron beam heating.
According to an aspect of the present invention, evaporation source is configured to the form of heated filament or crucible.
According to an aspect of the present invention, evaporation source is tungsten filament.
According to an aspect of the present invention, in evaporative process, rotation should super material base.
According to an aspect of the present invention, be provided with a plurality of evaporation sources.
According to an aspect of the present invention, super material base is 10-20cm apart from the distance of evaporation source.
According to an aspect of the present invention, super material base is 15cm apart from the distance of evaporation source.
Will be appreciated that, the feature in the above each side of the present invention is independent assortment within the scope of the invention, and is not subjected to the restriction of its order---as long as the technical scheme after combination drops in connotation of the present invention.
[description of drawings]
In order to be illustrated more clearly in the technical scheme in the present invention, the below will do to introduce simply to accompanying drawing of the present invention, wherein:
Fig. 1 is the schematic diagram for a kind of evaporation coating device of implementing method for processing microstructure of the present invention.
Fig. 2 has schematically shown the flow process of implementing method for processing microstructure of the present invention.
Fig. 3-6 have schematically shown the shape of the elementary cell of the microstructure that the method according to this invention obtains.
[embodiment]
Hereinafter in connection with the preferred embodiments of the present invention, technical scheme of the present invention is elaborated.
Need to understand, following description (comprising accompanying drawing) is only exemplary, but not the limitation of the present invention description.Can relate in the following description the concrete quantity of parts, yet also it is to be understood that, these quantity are only also exemplary, and those skilled in the art can choose arbitrarily with reference to the present invention the parts of proper amt.And the wordings such as mentioned " first ", " second ", be not the sequence that represents parts importance in the present invention, only is used as the difference name of parts and is referred to as.
Referring to Fig. 1 as can be known, comprise ion collector 1, excitation wire 2, pole shoe 3, anode 4, radiator 5, cold-crucible 6 and scattered electrons collector 7 for a kind of evaporation coating device 10 of implementing method for processing microstructure of the present invention.Certainly, also can use other suitable evaporation coating devices.
Referring to Fig. 2 implementing procedure of the present invention as can be known.According to a form of implementation of the present invention, at first utilize the super material base of known method preparation (or directly buying), be preferably the epoxy resin substrate.The preparation of being somebody's turn to do super material base can be with reference to the preparation technology of PCB substrate.
Then, utilize electronic beam photetching process to prepare the mask plate of patterning.This is wherein at first at quartz surfaces spin coating one deck electron beam resist; Next utilizes electron beam (or laser) direct writing technology that figure is transferred on the beamwriter lithography glue-line, wherein electron source produces a large amount of electronics, these electronics are accelerated and focus on (being focused by magnetic mode or electric mode) shaping and project on electron beam resist, and scanning forms the figure of required microstructure; Formation line pattern again exposes, develops; Utilize at last laser technology according to the microstructure graph template of pattern carve hollow out, the i.e. mask plate of patterning.
In fact, obtain super material base with the step of the mask plate that obtains patterning and in no particular order, can change as required its mutual order.
After the mask plate of obtaining super material base and patterning, the mask plate of patterning is covered on super material base, then should super material base be placed on evaporation source the place ahead, and with evaporated material, for example copper sheet, then be placed on the evaporation source of crucible form (also can be configured to heated filament, especially tungsten filament).Wherein, the distance of substrate and evaporation source is tens centimetres, preferably 10-20cm, more preferably 15cm.
In order to guarantee the homogeneity of thicknesses of layers, a plurality of evaporation sources can be set, and super material base is rotated in evaporative process.
To surpass material base, evaporated material (copper sheet) and evaporation source place respectively appropriate after, the vacuum chamber of evaporation coating device is pumped into high vacuum, make it air pressure less than 1Pa, preferably less than 0.01Pa.
Then, the heating evaporation source is to approximately 1040 ℃, stopped heating after approximately 5 minutes (this time length depends on the film thickness that will deposit, also with other relating to parameters, for example Heating temperature, pressure in vacuum tank etc.).
At last, take off super material base from evaporation coating device, throw off mask plate from super material base and namely obtain needed metal micro structure.
Fig. 3-6 have schematically shown the unit cell shapes of the microstructure that the method according to this invention obtains, and these shapes are pre-designed in the process of preparation mask plate.Fig. 3 and the microstructure unit that Figure 4 shows that I shape and I-shaped derivative type metal wire structure.And Fig. 5 and Figure 6 shows that the microstructure unit of the ring-like or split ring derivative type metal wire structure of opening.Metal micro structure comprises the microstructure unit of a plurality of array arrangements.
Process the microstructure of super material with method of the present invention, improve to a great extent the quality of film, can greatly improve the bonding force of Copper Foil and substrate and greatly save the consumption of copper metal, and the high-level efficiency mass processing that surpasses material in enormous quantities.
Need to understand, above basis has preferred embodiment been done detailed description to the present invention, but it will be appreciated that, scope of the present invention is not limited to these concrete embodiments, but comprises that those skilled in the art are according to any modifications and changes that openly can make of the present invention.
Claims (10)
1. method for processing microstructure, the method is utilized evaporation coating device, comprises the following steps:
A, obtain super material base;
B, obtain the mask plate of patterning;
C, the mask plate of patterning is covered on super material base;
D, will surpass material base and be placed on evaporation source the place ahead, and evaporated material will be placed on evaporation source;
E, the vacuum chamber of evaporation coating device is pumped into high vacuum;
F, make evaporation source be heated to preset temperature to evaporate, stop evaporation after the scheduled time;
G, throw off mask plate from super material base and namely obtain needed metal micro structure.
2. according to claim 1 method, is characterized in that, super material base is epoxy resin substrate, ceramic substrate or ferroelectrics substrate.
3. according to claim 1 method, is characterized in that, evaporated material comprises copper sheet, silver strip, gold plaque.
4. according to claim 1 method, is characterized in that, metal micro structure comprises the microstructure unit of a plurality of array arrangements, and microstructure unit is I shape or I-shaped derivative type metal wire structure.
5. according to claim 1 method, is characterized in that, metal micro structure comprises the microstructure unit of a plurality of array arrangements, and microstructure unit is the ring-like or split ring derivative type metal wire structure of opening.
6. according to claim 1 method, is characterized in that, utilizes electronic beam photetching process to prepare the mask of patterning.
7. according to claim 1 method, is characterized in that, evaporation source is configured to the form of heated filament or crucible.
8. according to claim 1 method, is characterized in that, evaporation source is tungsten filament.
9. according to claim 1 method, is characterized in that, in evaporative process, rotates super material base.
10. according to claim 1 method, is characterized in that, is provided with a plurality of evaporation sources.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011104409606A CN103173725A (en) | 2011-12-26 | 2011-12-26 | Microstructure processing method |
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| CN2011104409606A CN103173725A (en) | 2011-12-26 | 2011-12-26 | Microstructure processing method |
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| CN103173725A true CN103173725A (en) | 2013-06-26 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111390195A (en) * | 2020-03-27 | 2020-07-10 | 陕西理工大学 | Micro-interface quantum-scattering-free tungsten-copper alloy and preparation method and application thereof |
| CN113073292A (en) * | 2021-03-26 | 2021-07-06 | 昆山工研院新型平板显示技术中心有限公司 | Pattern structure manufacturing method and mask structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452203A (en) * | 2007-12-05 | 2009-06-10 | 中国科学院微电子研究所 | Method for producing X ray exposure mask based on double-layer gum process |
| CN101928914A (en) * | 2010-09-02 | 2010-12-29 | 南京大学 | Method for preparing large-area two-dimensional super-structure material |
-
2011
- 2011-12-26 CN CN2011104409606A patent/CN103173725A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452203A (en) * | 2007-12-05 | 2009-06-10 | 中国科学院微电子研究所 | Method for producing X ray exposure mask based on double-layer gum process |
| CN101928914A (en) * | 2010-09-02 | 2010-12-29 | 南京大学 | Method for preparing large-area two-dimensional super-structure material |
Non-Patent Citations (4)
| Title |
|---|
| 吴郡等: "《国防工业出版社》", 30 November 2010, 《国防工业出版社》 * |
| 周广德: "电子束蒸涂技术", 《电工电能新技术》 * |
| 李鸿梅: "含负折射率材料一维光子晶体光学特性的研究", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
| 王福贞等: "《气相沉积应用技术》", 31 January 2007, 机械工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111390195A (en) * | 2020-03-27 | 2020-07-10 | 陕西理工大学 | Micro-interface quantum-scattering-free tungsten-copper alloy and preparation method and application thereof |
| CN111390195B (en) * | 2020-03-27 | 2022-05-24 | 陕西理工大学 | Micro-interface quantum scattering-free tungsten-copper alloy and preparation method and application thereof |
| CN113073292A (en) * | 2021-03-26 | 2021-07-06 | 昆山工研院新型平板显示技术中心有限公司 | Pattern structure manufacturing method and mask structure |
| CN113073292B (en) * | 2021-03-26 | 2023-01-31 | 昆山工研院新型平板显示技术中心有限公司 | Pattern structure manufacturing method and mask structure |
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