CN103166582A - Improved type capacity amplifying circuit - Google Patents

Abstract

The invention provides a capacity amplifying circuit which comprises a first transconductance amplifier, a second transconductance amplifier, a capacitor and a resistor. Each transconductance amplifier is provided with an in-phase input end, an inverted input end and an output end. The in-phase input end of the first transconductance amplifier is connected with the inverted input end of the second transconductance amplifier. The inverted input end of the first transconductance amplifier is connected with the in-phase input end of the second transconductance amplifier. The capacitor and the resistor are sequentially arranged between the inverted input end of the first transconductance amplifier and the output end of the first transconductance amplifier in series. The output end of the second transconductance amplifier is connected with an intermediate node of the capacitor and the resistor. The two input ends of the first transconductance amplifier and the two input ends of the second transconductance amplifier are inversely connected, so that input errors of the two transconductance amplifiers are finally and mutually counteracted to some extent, a capacity amplified function is simultaneously achieved, and therefore a larger chip area and working current are not needed to be consumed.

Description

The modified capacitor amplifying circuit

[technical field]

The present invention relates to a kind of stable capacitor compensating circuit field, particularly a kind of modified capacitor amplifying circuit, thus it produces the more zero point of low frequency by building-out capacitor is amplified.

[background technology]

Fig. 1 is the circuit diagram of capacitor amplifier circuit in prior art.Described capacitor amplifier circuit comprises the first trsanscondutance amplifier gm1, the second trsanscondutance amplifier gm2, building-out capacitor C, resistance R 1 and R2.The in-phase input end of described the first trsanscondutance amplifier gm1 meets a reference voltage Vr, anti-phase input termination one feedback voltage V f.Described building-out capacitor C, resistance R 1 and R2 are connected between the inverting input and output of the first trsanscondutance amplifier gm1 successively.The in-phase input end of described the second trsanscondutance amplifier gm2 is connected with the intermediate node that additional capacitor C is connected with resistance R, and the inverting input of the second trsanscondutance amplifier gm2 and its output and resistance R 2 are connected intermediate node and are connected with R1.

Capacitor amplifier circuit shown in Fig. 1 can realize that electric capacity amplifies, its multiplication factor equals (1+gm2.R2), gm2 is the mutual conductance of the second trsanscondutance amplifier, but this method can cause increasing the error that the input Ve of trsanscondutance amplifier forms, and the error originated from input (offset) of supposing the first trsanscondutance amplifier gm1 is V _OS1, the error originated from input of the second trsanscondutance amplifier gm2 is V _OS2, the overall error of the output of the first trsanscondutance amplifier gm1 of its equivalence is V _OS1+ V _OS2. (gm2/gm1).Compare with the structure of amplifying without electric capacity, increased V _OS2. (gm2/gm1), although can be by gm1/gm2 being designed very large, and the error that reduces to increase.Due in order to realize larger electric capacity enlarge-effect, gm2 also need design very greatly, gm1 need design larger, gm1 is directly proportional to the breadth length ratio of input pipe, also increases with its operating current.If need to increase gm1, need larger chip area and current drain.

Therefore, be necessary to propose a kind of improved technical scheme and solve the problems referred to above.

[summary of the invention]

The object of the present invention is to provide a kind of modified capacitor amplifying circuit, it can realize the electric capacity enlarging function, but helps simultaneously to reduce the error originated from input of trsanscondutance amplifier, and need not to consume larger chip area and operating current.

To achieve these goals, the present invention proposes a kind of capacitor amplifier circuit, and it comprises the first trsanscondutance amplifier, the second trsanscondutance amplifier, electric capacity and resistance, and each trsanscondutance amplifier has an in-phase input end, an inverting input and an output.The in-phase input end of the first trsanscondutance amplifier is connected with the inverting input of the second trsanscondutance amplifier, the inverting input of the first trsanscondutance amplifier is connected with the normal phase input end of the second trsanscondutance amplifier, described electric capacity and resistance are connected between the output of the inverting input of the first trsanscondutance amplifier and the first trsanscondutance amplifier successively, and the output of the second trsanscondutance amplifier is connected with the intermediate node of described electric capacity and described resistance.

Further, the final error originated from input of described capacitor amplifier circuit equals V _OS1-V _OS2. (gm2/gm1), wherein gm1 represents the mutual conductance of the first trsanscondutance amplifier, and gm2 represents the mutual conductance of the second trsanscondutance amplifier, V _OS1Be the error originated from input of the first trsanscondutance amplifier, V _OS2It is the error originated from input of the second trsanscondutance amplifier.

Further, gm2/gm1＜1.

Further, described trsanscondutance amplifier comprises input stage circuit and output-stage circuit.

described input stage circuit comprises difference PMOS transistor MP1 and MP2, current source I1, nmos pass transistor MN1, MN2, MNc1 and MNc2, resistance R 1 and R2, the grid of difference transistor MP1 is the in-phase input end of trsanscondutance amplifier, the grid of difference transistor MP2 is the inverting input of trsanscondutance amplifier, the source class of described difference transistor MP1 and MP2 is connected, the end of described current source I1 connects power vd D, the source class of another termination difference transistor MP1 and MP2, described resistance R 2, nmos pass transistor MNc2 and nmos pass transistor MN2 are series between the drain electrode and ground GND of described difference transistor MP2 successively, described resistance R 1, nmos pass transistor MNc2 and nmos pass transistor MN1 are series between the drain electrode and ground GND of described difference transistor MP1 successively, an end that is connected with difference transistor MP2 of described resistance R 2 is connected with the grid of described nmos pass transistor MNc2, the other end of described resistance R 2 is connected with the grid of described nmos pass transistor MN2, an end that is connected with difference transistor MP1 of described resistance R 1 is connected with the grid of described nmos pass transistor MNc1, the other end of described resistance R 1 is connected with the grid of described nmos pass transistor MN1.

described output-stage circuit comprises nmos pass transistor MN3, MNc3, MN4 and MNc4, PMOS transistor MP3, MPc3, MP4 and MPc4 and resistance R 3, described PMOS transistor MP3, MPc3 and described nmos pass transistor MNc3, MN3 is connected between power vd D and ground successively, described PMOS transistor MP4, MPc4, resistance R 3 and described nmos pass transistor MNc4, MN4 is connected between power vd D and ground successively, an end that is connected with PMOS transistor MPc4 of resistance R 3 is connected with the grid of described PMOS transistor MP4, the other end of resistance R 3 is connected with the grid of described PMOS transistor MPc4, the gate interconnect of described PMOS transistor MP3 and MP4, the gate interconnect of described PMOS transistor MPc3 and MPc4, the gate interconnect of described nmos pass transistor MN4 and MN2, the gate interconnect of described nmos pass transistor MNc4 and MNc2, the gate interconnect of described nmos pass transistor MN3 and MN1, the gate interconnect of described nmos pass transistor MNc3 and MNc1, the intermediate node of described PMOS transistor MPc3 and described nmos pass transistor MNc3 is the output OUT of described trsanscondutance amplifier.

According to a further aspect in the invention, the invention provides another kind of capacitor amplifier circuit, it comprises the first trsanscondutance amplifier, the second trsanscondutance amplifier, electric capacity and resistance, and each trsanscondutance amplifier has an in-phase input end, an inverting input and an output.The in-phase input end of the first trsanscondutance amplifier is connected with the inverting input of the second trsanscondutance amplifier, the inverting input of the first trsanscondutance amplifier is connected with the normal phase input end of the second trsanscondutance amplifier, described electric capacity and resistance are connected between the output and ground of the first trsanscondutance amplifier successively, and the output of the second trsanscondutance amplifier is connected with the intermediate node of described electric capacity and described resistance.

Further, the final error originated from input of described capacitor amplifier circuit equals V _OS1-V _OS2. (gm2/gm1), wherein gm1 represents the mutual conductance of the first trsanscondutance amplifier, and gm2 represents the mutual conductance of the second trsanscondutance amplifier, V _OS1Be the error originated from input of the first trsanscondutance amplifier, V _OS2It is the error originated from input of the second trsanscondutance amplifier.

Further, gm2/gm1＜1.

Further, described trsanscondutance amplifier comprises input stage circuit and output-stage circuit.

described input stage circuit comprises difference PMOS transistor MP1 and MP2, current source I1, nmos pass transistor MN1, MN2, MNc1 and MNc2, resistance R 1 and R2, the grid of difference transistor MP1 is the in-phase input end of trsanscondutance amplifier, the grid of difference transistor MP2 is the inverting input of trsanscondutance amplifier, the source class of described difference transistor MP1 and MP2 is connected, the end of described current source I1 connects power vd D, the source class of another termination difference transistor MP1 and MP2, described resistance R 2, nmos pass transistor MNc2 and nmos pass transistor MN2 are series between the drain electrode and ground GND of described difference transistor MP2 successively, described resistance R 1, nmos pass transistor MNc2 and nmos pass transistor M N1 are series between the drain electrode and ground GND of described difference transistor MP1 successively, an end that is connected with difference transistor MP2 of described resistance R 2 is connected with the grid of described nmos pass transistor MNc2, the other end of described resistance R 2 is connected with the grid of described nmos pass transistor MN2, an end that is connected with difference transistor M P1 of described resistance R 1 is connected with the grid of described nmos pass transistor MNc1, the other end of described resistance R 1 is connected with the grid of described nmos pass transistor MN1.

described output-stage circuit comprises nmos pass transistor MN3, MNc3, MN4 and MNc4, PMOS transistor MP3, MPc3, MP4 and MPc4 and resistance R 3, described PMOS transistor MP3, MPc3 and described nmos pass transistor MNc3, MN3 is connected between power vd D and ground successively, described PMOS transistor MP4, MPc4, resistance R 3 and described nmos pass transistor MNc4, MN4 is connected between power vd D and ground successively, an end that is connected with PMOS transistor MPc4 of resistance R 3 is connected with the grid of described PMOS transistor MP4, the other end of resistance R 3 is connected with the grid of described PMOS transistor MPc4, the gate interconnect of described PMOS transistor MP3 and MP4, the gate interconnect of described PMOS transistor MPc3 and MPc4, the gate interconnect of described nmos pass transistor MN4 and MN2, the gate interconnect of described nmos pass transistor MNc4 and MNc2, the gate interconnect of described nmos pass transistor MN3 and MN1, the gate interconnect of described nmos pass transistor MNc3 and MNc1, the intermediate node of described PMOS transistor MPc3 and described nmos pass transistor MNc3 is the output OUT of described trsanscondutance amplifier.

Compared with prior art, in the present invention with two input reversal connections of two inputs and second trsanscondutance amplifier of the first trsanscondutance amplifier, finally cause the error originated from input of two trsanscondutance amplifiers to be cancelled each other to a certain extent, simultaneously also the electric capacity amplification be can play, thereby larger chip area and operating current need not to consume.

[description of drawings]

In order to be illustrated more clearly in the technical scheme of the embodiment of the present invention, during the below will describe embodiment, the accompanying drawing of required use is done to introduce simply, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:

Fig. 1 is the circuit diagram of capacitor amplifier circuit in prior art;

Fig. 2 is the modified capacitor amplifying circuit circuit diagram in one embodiment in the present invention;

Fig. 3 is the modified capacitor amplifying circuit circuit diagram in one embodiment in the present invention; With

Fig. 4 is the trsanscondutance amplifier circuit diagram in one embodiment in type capacitor amplifier circuit in the present invention.

[embodiment]

For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.

The present invention proposes a kind of modified capacitor amplifying circuit, it can realize the electric capacity enlarging function, also can reduce the error originated from input of trsanscondutance amplifier simultaneously, and need not to consume larger chip area and operating current.

Fig. 2 is the modified capacitor amplifying circuit circuit diagram in one embodiment in the present invention.As shown in Figure 2, described capacitor amplifier circuit comprises the first trsanscondutance amplifier gm1, the second trsanscondutance amplifier gm2, capacitor C and resistance R 1.Each trsanscondutance amplifier has an in-phase input end, an inverting input and an output.The in-phase input end of the first trsanscondutance amplifier gm1 is connected with the inverting input of the second trsanscondutance amplifier gm2, and the inverting input of the first trsanscondutance amplifier gm1 is connected with the normal phase input end of the second trsanscondutance amplifier gm2.Described capacitor C and resistance R 1 are connected between the output of the inverting input of the first trsanscondutance amplifier gm1 and the first trsanscondutance amplifier gm1 successively, and the output of the second trsanscondutance amplifier gm2 is connected with the intermediate node of capacitor C with resistance R 1.

Modified capacitor amplifying circuit shown in Figure 2 can further improve the problem of error originated from input, also can play the effect of amplifying electric capacity simultaneously.If the error originated from input of the first trsanscondutance amplifier gm1 is V _OS1, the error originated from input of the second trsanscondutance amplifier is V _OS2, two just in time reversal connections of input due to the first trsanscondutance amplifier and the second trsanscondutance amplifier make final error originated from input can cancel out each other to a certain extent.Error originated from input after counteracting is V _OS1-V _OS2. (gm2/gm1), wherein gm1 represents the mutual conductance of the first trsanscondutance amplifier, and gm2 represents the mutual conductance of the second trsanscondutance amplifier.If gm2/gm1＜1 and close to 1, and V _OS2Close to V _OS1, the error originated from input after offsetting can be reduced greatly.

Can adopt the structure of identical trsanscondutance amplifier in design, and can by the method for various layout design, make V _OS1Close to V _OS2Realize the neutralization effect of better error originated from input.The method for designing that a kind of concrete realization is mated is except input difference is different to the size of pipe, other devices connections of the first trsanscondutance amplifier gm1 and size all with the second trsanscondutance amplifier gm2's is identical, and each branch road offset operation electric current is also identical.Dimensionally, it is the same that input difference can also be designed to length to pipe, and unit width too, is that plural number is different, and the equivalent overall width here equals unit width and multiply by plural number.Can realize so better mating neutralization effect.On layout design, can adopt the adaptation design method of many routines, obtain better matching effect as inserting finger or homocentric method.

Certainly, the another kind of method for designing that realizes coupling is input difference to be got identical to the size design of pipe, makes its electric current proportional.Perhaps have both at the same time.In a word, can make V as far as possible _OS1Approach and equal V _OS2, and make gm2/gm1 less than 1, but close to 1.

The computing formula of the mutual conductance gm of trsanscondutance amplifier is as follows:

$\mathrm{gm}=\sqrt{2I.\mathrm{\μ}.C_{\mathrm{OX}}.\left(\frac{W}{L}\right)}$

For the capacitor amplifier circuit in Fig. 2, the theory relation that its electric capacity amplifies is as follows:

According to Kirchhoff's law KCL, following equation is arranged:

$-\mathrm{gm}1.\mathrm{Vf}=\frac{(\mathrm{Ve}-\mathrm{Vx})}{R1}$

$\frac{(\mathrm{Ve}-\mathrm{Vx})}{R1}+\mathrm{gm}2.\mathrm{Vf}=(\mathrm{Vx}-\mathrm{Vf}).s.C,$

Wherein Vf is the feedback voltage that the inverting input of the first trsanscondutance amplifier connects, and Vr is the reference voltage that the normal phase input end of the first trsanscondutance amplifier connects, and finds the solution to get:

$\frac{\mathrm{Ve}}{\mathrm{Vf}}=-\frac{(\mathrm{gm}1-\mathrm{gm}2)+(\mathrm{gm}1.R1-1).s.C}{s.C}.$

If gm1.R1＞＞1, simplifying above-mentioned formula can get:

$\frac{\mathrm{Ve}}{\mathrm{Vf}}=-\frac{(\mathrm{gm}1-\mathrm{gm}2)+\mathrm{gm}1.R1.s.C}{s.C}.$

The zero frequency of equivalence is:

$f_Z=\frac{1}{2\mathrm{\π}.\mathrm{gm}1.R1.C/(\mathrm{gm}1-\mathrm{gm}2)}=\frac{1}{2\mathrm{\π}.R1.C.(1-\mathrm{gm}2/\mathrm{gm}1)}.$

Therefore, the capacitor amplifier circuit shown in Fig. 2 has amplified 1/ (1-gm2/gm1) with capacitor C, if gm2/gm1=7/8 is equivalent to capacitor C has been amplified 8 times.

In order to obtain larger multiplication factor, also need to make gm2/gm1 less than 1, but as far as possible close to 1, consistent with the above-mentioned requirement that reduces error originated from input.

Fig. 3 is the modified capacitor amplifying circuit circuit diagram in another embodiment in the present invention.As shown in Figure 3, described capacitor amplifier circuit comprises the first trsanscondutance amplifier gm1, the second trsanscondutance amplifier gm2, capacitor C and resistance R 1 equally.The in-phase input end of the first trsanscondutance amplifier gm1 is connected with the inverting input of the second trsanscondutance amplifier gm2, and the inverting input of the first trsanscondutance amplifier gm1 is connected with the normal phase input end of the second trsanscondutance amplifier gm2.Described capacitor C and resistance R 1 are connected between the inverting input and ground of the first trsanscondutance amplifier gm1 successively, and the output of the second trsanscondutance amplifier gm2 is connected with the intermediate node of capacitor C with resistance R 1.

For the capacitor amplifier circuit in Fig. 2, the theory relation that its electric capacity amplifies is as follows:

According to Kirchhoff's law KCL, following equation is arranged:

$\frac{(\mathrm{Ve}-\mathrm{Vx})}{R1}+\mathrm{gm}2.\mathrm{Vf}=\mathrm{Vx}.s.C,$

$\frac{(\mathrm{Ve}-\mathrm{Vx})}{R1}+\mathrm{gm}2.\mathrm{Vf}=\mathrm{Vx}.s.C,$

Find the solution and can get:

$\frac{\mathrm{Ve}}{\mathrm{Vf}}=-\frac{\mathrm{gm}1.R1.s.C+(\mathrm{gm}1-\mathrm{gm}2)}{s.C}$

The zero frequency of equivalence is:

$f_Z=\frac{1}{2\mathrm{\π}.\mathrm{gm}1.R1.C/(\mathrm{gm}1-\mathrm{gm}2)}=\frac{1}{2\mathrm{\π}.R1.C.(1-\mathrm{gm}2/\mathrm{gm}1)}$

Capacitor amplifier circuit shown in Fig. 3 is equivalent to capacitor C has been amplified 1/ (1-gm2/gm1) doubly, if gm2/gm1=7/8 is equivalent to C has been amplified 8 times.

Similar as can be known to the analysis of Fig. 2, if the error originated from input of the first trsanscondutance amplifier gm1 is V _OS1, the error originated from input of the second trsanscondutance amplifier gm2 is V _OS2, the equivalent error originated from input after offsetting is V _OS1-V _OS2. (gm2/gm1), visible V _OS1And V _OS2Can there be certain neutralization effect.

Fig. 4 is trsanscondutance amplifier gm1 and/or the gm2 circuit diagram in one embodiment in Fig. 2 or Fig. 3.

Described trsanscondutance amplifier comprises input stage circuit and output-stage circuit.

Described input stage circuit comprises difference PMOS (P-channel Metal Oxide Semiconductor) transistor MP1 and MP2, current source I1, NMOS (N-channel Metal Oxide Semiconductor) transistor MN1, MN2, MNc1 and MNc2, resistance R 1 and R2.The grid of difference transistor MP1 is in-phase input end, the grid of difference transistor MP2 is inverting input, the source class of described difference transistor MP1 and MP2 is connected, and the end of described current source I1 connects power vd D, the source class of another termination difference transistor MP1 and MP2.Described resistance R 2, nmos pass transistor MNc2 and nmos pass transistor MN2 are series between the drain electrode and ground GND of described difference transistor MP2 successively.Described resistance R 1, nmos pass transistor MNc2 and nmos pass transistor MN1 are series between the drain electrode and ground GND of described difference transistor MP1 successively.An end that is connected with difference transistor MP2 of described resistance R 2 is connected with the grid of described nmos pass transistor MNc2, and the other end of described resistance R 2 is connected with the grid of described nmos pass transistor MN2.An end that is connected with difference transistor MP1 of described resistance R 1 is connected with the grid of described nmos pass transistor MNc1, and the other end of described resistance R 1 is connected with the grid of described nmos pass transistor MN1.

Described output-stage circuit comprises nmos pass transistor MN3, MNc3, MN4 and MNc4, PMOS transistor MP3, MPc3, MP4 and MPc4, resistance R 3.Described PMOS transistor MP3, MPc3 and described nmos pass transistor MNc3, MN3 are connected between power vd D and ground successively, described PMOS transistor MP4, MPc4, resistance R 3 and described nmos pass transistor MNc4, MN4 are connected between power vd D and ground successively, an end that is connected with PMOS transistor MPc4 of resistance R 3 is connected with the grid of described PMOS transistor MP4, and the other end of resistance R 3 is connected with the grid of described PMOS transistor MPc4.The gate interconnect of described PMOS transistor MP3 and MP4, the gate interconnect of described PMOS transistor MPc3 and MPc4, the gate interconnect of described nmos pass transistor MN4 and MN2, the gate interconnect of described nmos pass transistor MNc4 and MNc2, the gate interconnect of described nmos pass transistor MN3 and MN1, the gate interconnect of described nmos pass transistor MNc3 and MNc1.The intermediate node of described PMOS transistor MPc3 and described nmos pass transistor MNc3 is the output OUT of described trsanscondutance amplifier.

For trsanscondutance amplifier gm1 and the gm2 shown in Fig. 2 and 3, all need output impedance high as much as possible, so this structure has adopted cascade structure in output stage, amplified output impedance.Concretely, the output resistance of described nmos pass transistor MN3 is amplified by described nmos pass transistor MNc3, and its multiplication factor is gm _NC3.ro _NC3, gm wherein _NC3Be the mutual conductance of transistor MNc3, ro _NC3Output resistance for transistor MNc3.The output resistance of transistor MP3 has also been amplified gm by transistor MPc3 _PC3.ro _PC3Doubly, gm wherein _PC3Be the mutual conductance of MPc3, ro _PC3Output resistance for MPc3.

Certainly, also can adopt the trsanscondutance amplifier of other structures, not adopt the structure of cascade such as output stage.

Capacitor amplifier circuit herein can be applied in the feedback loop of low difference voltage regulator, switch power converter etc., the first trsanscondutance amplifier can be as the error amplifier in feedback loop, Vf is the feedback voltage in feedback loop, and Vr is the reference voltage in feedback loop.

The word that " connection " herein, " joining ", " being connected to " etc. relate to electric connection all can represent direct or indirect electric connection.

Above-mentioned explanation has fully disclosed the specific embodiment of the present invention.It is pointed out that being familiar with any change that the person skilled in art does the specific embodiment of the present invention does not all break away from the scope of claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to previous embodiment.

Claims (8)

1. capacitor amplifier circuit, it comprises the first trsanscondutance amplifier, the second trsanscondutance amplifier, electric capacity and resistance, each trsanscondutance amplifier has an in-phase input end, an inverting input and an output, it is characterized in that, the in-phase input end of the first trsanscondutance amplifier is connected with the inverting input of the second trsanscondutance amplifier, the inverting input of the first trsanscondutance amplifier is connected with the normal phase input end of the second trsanscondutance amplifier, described electric capacity and resistance are connected between the output of the inverting input of the first trsanscondutance amplifier and the first trsanscondutance amplifier successively, the output of the second trsanscondutance amplifier is connected with the intermediate node of described electric capacity and described resistance.

2. capacitor amplifier circuit according to claim 1, is characterized in that, the final error originated from input of described capacitor amplifier circuit equals V _OS1-V _OS2. (gm2/gm1), wherein gm1 represents the mutual conductance of the first trsanscondutance amplifier, and gm2 represents the mutual conductance of the second trsanscondutance amplifier, V _OS1Be the error originated from input of the first trsanscondutance amplifier, V _OS2It is the error originated from input of the second trsanscondutance amplifier.

3. capacitor amplifier circuit according to claim 2, is characterized in that, gm2/gm1＜1.

4. according to claim 1-3 arbitrary described capacitor amplifier circuits, is characterized in that, described trsanscondutance amplifier comprises input stage circuit and output-stage circuit,

described input stage circuit comprises difference PMOS transistor M P1 and MP2, current source I1, nmos pass transistor MN1, MN2, MNc1 and MNc2, resistance R 1 and R2, the grid of difference transistor MP1 is the in-phase input end of trsanscondutance amplifier, the grid of difference transistor MP2 is the inverting input of trsanscondutance amplifier, the source class of described difference transistor MP1 and MP2 is connected, the end of described current source I1 connects power vd D, the source class of another termination difference transistor M P1 and MP2, described resistance R 2, nmos pass transistor MNc2 and nmos pass transistor MN2 are series between the drain electrode and ground GND of described difference transistor MP2 successively, described resistance R 1, nmos pass transistor MNc2 and nmos pass transistor MN1 are series between the drain electrode and ground GND of described difference transistor MP1 successively, an end that is connected with difference transistor MP2 of described resistance R 2 is connected with the grid of described nmos pass transistor MNc2, the other end of described resistance R 2 is connected with the grid of described nmos pass transistor MN2, an end that is connected with difference transistor MP1 of described resistance R 1 is connected with the grid of described nmos pass transistor MNc1, the other end of described resistance R 1 is connected with the grid of described nmos pass transistor MN1,

described output-stage circuit comprises nmos pass transistor MN3, MNc3, MN4 and MNc4, PMOS transistor MP3, MPc3, MP4 and MPc4 and resistance R 3, described PMOS transistor MP3, MPc3 and described nmos pass transistor MNc3, MN3 is connected between power vd D and ground successively, described PMOS transistor MP4, MPc4, resistance R 3 and described nmos pass transistor MNc4, MN4 is connected between power vd D and ground successively, an end that is connected with PMOS transistor MPc4 of resistance R 3 is connected with the grid of described PMOS transistor MP4, the other end of resistance R 3 is connected with the grid of described PMOS transistor MPc4, the gate interconnect of described PMOS transistor MP3 and MP4, the gate interconnect of described PMOS transistor MPc3 and MPc4, the gate interconnect of described nmos pass transistor MN4 and MN2, the gate interconnect of described nmos pass transistor MNc4 and MNc2, the gate interconnect of described nmos pass transistor MN3 and M N1, the gate interconnect of described nmos pass transistor MNc3 and MNc1, the intermediate node of described PMOS transistor MPc3 and described nmos pass transistor MNc3 is the output OUT of described trsanscondutance amplifier.

5. capacitor amplifier circuit, it comprises the first trsanscondutance amplifier, the second trsanscondutance amplifier, electric capacity and resistance, each trsanscondutance amplifier has an in-phase input end, an inverting input and an output, it is characterized in that, the in-phase input end of the first trsanscondutance amplifier is connected with the inverting input of the second trsanscondutance amplifier, the inverting input of the first trsanscondutance amplifier is connected with the normal phase input end of the second trsanscondutance amplifier, described electric capacity and resistance are connected between the output and ground of the first trsanscondutance amplifier successively, the output of the second trsanscondutance amplifier is connected with the intermediate node of described electric capacity and described resistance.

6. capacitor amplifier circuit according to claim 1, is characterized in that, the final error originated from input of described capacitor amplifier circuit equals V _OS1-V _OS2. (gm2/gm1), wherein gm1 represents the mutual conductance of the first trsanscondutance amplifier, and gm2 represents the mutual conductance of the second trsanscondutance amplifier, V _OS1Be the error originated from input of the first trsanscondutance amplifier, V _OS2It is the error originated from input of the second trsanscondutance amplifier.

7. capacitor amplifier circuit according to claim 6, is characterized in that, gm2/gm1＜1.

8. according to claim 1-3 arbitrary described capacitor amplifier circuits, is characterized in that, described trsanscondutance amplifier comprises input stage circuit and output-stage circuit,

described input stage circuit comprises difference PMOS transistor MP1 and MP2, current source I1, nmos pass transistor MN1, MN2, MNc1 and MNc2, resistance R 1 and R2, the grid of difference transistor MP1 is the in-phase input end of trsanscondutance amplifier, the grid of difference transistor MP2 is the inverting input of trsanscondutance amplifier, the source class of described difference transistor MP1 and MP2 is connected, the end of described current source I1 connects power vd D, the source class of another termination difference transistor MP1 and MP2, described resistance R 2, nmos pass transistor MNc2 and nmos pass transistor MN2 are series between the drain electrode and ground GND of described difference transistor MP2 successively, described resistance R 1, nmos pass transistor MNc2 and nmos pass transistor MN1 are series between the drain electrode and ground GND of described difference transistor MP1 successively, an end that is connected with difference transistor MP2 of described resistance R 2 is connected with the grid of described nmos pass transistor MNc2, the other end of described resistance R 2 is connected with the grid of described nmos pass transistor MN2, an end that is connected with difference transistor MP1 of described resistance R 1 is connected with the grid of described nmos pass transistor MNc1, the other end of described resistance R 1 is connected with the grid of described nmos pass transistor MN1,

described output-stage circuit comprises nmos pass transistor MN3, MNc3, MN4 and MNc4, PMOS transistor MP3, MPc3, MP4 and MPc4 and resistance R 3, described PMOS transistor MP3, MPc3 and described nmos pass transistor MNc3, MN3 is connected between power vd D and ground successively, described PMOS transistor MP4, MPc4, resistance R 3 and described nmos pass transistor MNc4, MN4 is connected between power vd D and ground successively, an end that is connected with PMOS transistor MPc4 of resistance R 3 is connected with the grid of described PMOS transistor MP4, the other end of resistance R 3 is connected with the grid of described PMOS transistor MPc4, the gate interconnect of described PMOS transistor MP3 and MP4, the gate interconnect of described PMOS transistor MPc3 and MPc4, the gate interconnect of described nmos pass transistor MN4 and MN2, the gate interconnect of described nmos pass transistor MNc4 and MNc2, the gate interconnect of described nmos pass transistor MN3 and MN1, the gate interconnect of described nmos pass transistor MNc3 and MNc1, the intermediate node of described PMOS transistor MPc3 and described nmos pass transistor MNc3 is the output OUT of described trsanscondutance amplifier.

Images