CN103165810A - Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof - Google Patents
Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof Download PDFInfo
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- CN103165810A CN103165810A CN2013100949708A CN201310094970A CN103165810A CN 103165810 A CN103165810 A CN 103165810A CN 2013100949708 A CN2013100949708 A CN 2013100949708A CN 201310094970 A CN201310094970 A CN 201310094970A CN 103165810 A CN103165810 A CN 103165810A
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Abstract
The invention discloses a carbon-coated class V-VI compound semiconductor nano sheet and a preparation method thereof, and relates to a topological insulator and a thermoelectric material and a preparation method thereof. The method solves the problems that the conventional preparation method for the class V-VI compound topological insulator is complex and cannot be used for preparing bulk materials, the surface of the topological insulator is instable, unsymmetrical and high in roughness and the electric conductivity and the Seebeck coefficient of the topological insulator serving as the thermoelectric material cannot be simultaneously improved. The carbon-coated class V-VI compound semiconductor nano sheet consists of a nano sheet matrix and a carbon layer coated on the surface of the nano sheet matrix. The amorphous carbon-coated class V-VI compound semiconductor nano sheet is prepared through a one-step hydrothermal method; and a grapheme-coated class V-VI compound semiconductor nano sheet is prepared through a two-step hydrothermal method. The surface of the prepared nano sheet is stable, symmetrical and low in roughness, and the electric conductivity and the Seebeck coefficient of the nano sheet can be simultaneously improved. The invention is applied in the field of preparation of topological insulators and thermoelectric materials.
Description
Technical field
The present invention relates to topological insulator and thermoelectric material and preparation method thereof.
Background technology
The topology insulator is a kind of new material with particular amount sub-feature.The two-dimensional structure that it is special and strong spin(-)orbit coupling effect make it have outstanding electronic structure.Its body phase electronic structure is the insulator that energy gap is arranged, and its surface is the metallic state without energy gap.Namely break the concept of " metal " and " insulator " on ordinary meaning, its built-in electrical insulation, the interface but has the metallicity conductive channel of spin correlation.This means that the electronics that topological insulator can be different with spin direction separates, thereby form spin current.People have just found that electronics has electric charge and two kinds of motions of spin very early, but in traditional circuit or semi-conductor electronic device, move to same direction from the electronics that spins up and the downward electronics of spin, to such an extent as to spin current is cancelled, only flow of charge (being electric current) exists.This causes the application of electronic device in the last hundred years, only utilized the electric charge of electronics, and its spin is left in the basket always.And on the surface of topological insulator, due to Effect of Spin-orbit Coupling, the regularity of electron motion, just as the automobile that moves on highway, forward is walked respectively different roads from the automobile of backward going, does not interfere with each other.The electronics that is in so orderly motion state can not collide mutually, so energy consumption is very low.
Along with the fast development of microelectric technique, the integrated level of semiconductor chip is more and more high.This produces the negative effect of two aspects.The power consumption of chip and relevant heat dissipation problem thereof on the one hand; The quantum effect problem that reduces to bring due to device dimension on the other hand.The energy that the energy that consumes due to the change electric spin status consumes far below the change state of charge, if we utilize the spin degree of freedom of charge carrier in semiconductor to realize the function of existing semiconductor device, the problem of power consumption will be readily solved.The electric control characteristic of these surface magnetisms that have due to topological insulator allows people be full of expectation to making the following novel components and parts such as computer chip, and wishes can cause thus the new round revolution of following electronic technology.
In addition, the surface state of topological insulator has distinguished characteristics, and it is that topological structure by the body electronic state of material is determined fully, is to be determined by symmetry, and is irrelevant with the concrete structure on surface.Therefore he exist highly stablely, substantially be not subject to impurity and unordered impact.Because the topological property of non-Abel's particle is subjected to symmetry protection, can be because small sample perturbations make the quantum state decoherence, thus causing mistake in computation, this makes topological insulator can be used for quantum calculation.
The topology insulator is to research condensed state matter basic physics important in inhibiting, for example near the topological insulator a superconductor can produce satisfy non-Abel (non-commute) statistics exciton---horse traction is that fermion approximately.
2009, there is scientist to calculate by theory and foretold V-VI compound semiconductor functional material (Bi
2Te
3, Sb
2Te
3, Bi
2Se
3Deng) be the new majorant topology insulating material system of a class.This class topological insulator material has unique advantage: at first, this class material is pure chemistry, and is highly stable and easily synthetic; The second, only have a dirac point to exist in this class material surface attitude, be the simplest majorant topology insulator, this simplicity provides good platform for the research of theoretical model; The 3rd, be also very more attracting, the physical efficiency gap of this material is very large, particularly Bi
2Se
3, be approximately 0.13eV, room temperature energy scale head and shoulders above, this also means the spin electric device that might realize the room temperature low energy consumption.Meanwhile relevant experimental work also makes important progress, and has confirmed the correctness of theoretical prophesy.
Although about topological insulator, all exciting prophesies are arranged in theory; but currently experimentally still have two very basic problems in the urgent need to address: to be at first to prepare high-quality topological insulator material; particularly but the material of practical application, be secondly to confirm the intrinsic properties of topological insulator surface attitude in transporting experiment.And material preparation will become the basis of all performances and application study.Since 2009, for the demand of topological insulator research, people set about carrying out the research of material preparation from single crystal material and film two aspects.There is following subject matter: 1, be the surface of material due to what topological insulator produced effect, thereby existing research is to prepare single crystal material and film as main, manufacturing process is complicated, cost is high, and can only study some surfaces of monocrystalline or film, thereby can't prepare block materials, limited the device application of material; 2, the surface is unstable: prepared material surface is exposed in atmosphere degradation phenomena can occur, though the surface state of topological insulator is strong in theory, it just exists as long as the surface is arranged, but may bringing surface oxidation, adsorbed water etc., the exposure atmosphere causes the variation of surface chemistry gesture, thereby cause the surface doping effect and introduce charge carrier, and the reduction of surface electronic mobility, the scattering that can cause makes the electron mobility of surface state less than the body electronics; 3, surperficial symmetry problem: the impact due to substrate when using topological insulator film causes bias, the symmetry of change structure can induce an asymmetric band curvature on the film vertical direction, cause the position difference of upper and lower surperficial Fermi level in being with.4, surface roughness: the roughening on surface also can cause the disperse of surface state in the space, and the reduction of surface electronic mobility.This just requires film surface must be that atomic level is smooth, has caused the high request to technology of preparing.
The generating of temperature difference heat effect as a kind of novel energy-saving environment-friendly technology, is to utilize thermoelectric material temperature difference resource directly to be changed into a kind of energy conversion method of electric energy.Compare with the traditional approach of present use, it does not need working media, direct, static operation.Therefore, its equipment no-movable part has guaranteed that it has the reliability of environmental protection noiselessness and height.The equipment of therefore, working under many low temperature and high temperature (as boiler, automobile engine, LNG Storage, Transport tank) can become the supplier of its temperature difference.The key that improves thermoelectric conversion device efficient is to prepare high performance thermoelectric material.Studies show that of thermoelectricity theory, the quality factor of thermoelectric material is directly proportional to conductivity and Seebeck coefficient, is inversely proportional to thermal conductivity.But these three physical quantitys have inherent relevance, can not be by an independent change conversion efficiency that improves material wherein, and this is the Main Bottleneck that the restriction thermoelectric material is used.Thereby in research at present, the Main Means that improves conducting material thermoelectricity performance is the thermal conductivity that reduces material.But this mode has almost reached the possible limit.The standard that wants to make thermoelectric material reach practical application must be sought a kind of approach that improves simultaneously conductivity and Seebeck coefficient.
Summary of the invention
The present invention is preparation method's complexity that will solve existing V-VI compounds of group topology insulator, can't prepare block materials, the surface is unstable, the surface asymmetry, surface roughness is high, and the problem that can not improve simultaneously as thermoelectric material conductivity and Seebeck coefficient, thereby provide carbon to coat group Ⅴ-Ⅵ compound semiconductor nanometer sheet and preparation method thereof.
Carbon of the present invention coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet by the nano-sheet matrix and is coated on its surperficial carbon-coating and forms; Wherein, the material of described nano-sheet matrix is Bi
2Te
3, Sb
2Te
3, Bi
2Se
3, Sb
2Se
3, comprise that doped F e, Cr, Co or Ni magnetic element are (as, Bi
2-xFe
xTe
3), its thickness is less than 100nm, and diameter is in micron level; The material of described carbon-coating is agraphitic carbon or Graphene microplate, and thickness is 1～12nm, and can be at its outer surface loaded Ag, Fe, Cr, Co, Ni or Cu nano particle.
The preparation method that the first carbon of the present invention coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet carries out according to the following steps:
One, take K (SbO) C of 0.02～0.1g
4H
4O
60.5H
2O, the Na of 0.02～0.1g
2TeO
3Powder, the NaOH of 1～5g and the glucose of 3～10g;
Two, add respectively the deionized water of 5～10mL in the raw material that takes to step 1, mix after stirring and dissolving, and add deionized water and be diluted to 20～40mL, then add the N of 2～4mL
2H
4H
2O is transferred in the reactor of 50mL specification, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain agraphitic carbon and coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
The preparation method that the second carbon of the present invention coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet carries out according to the following steps:
One, take K (SbO) C of 0.02～0.05g
4H
4O
60.5H
2O, the Na of 0.02～0.05g
2TeO
3The NaOH of powder and 0.5～1.0g;
Two, the deionized water that adds 20～40mL in the raw material that takes to step 1 adds the N of 2～4mL after stirring and dissolving
2H
4H
2O is transferred in the reactor of 50mL specification, and compactedness is 60%～80%, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain Sb
2Te
3Nanometer sheet;
Four, take the graphene oxide powder of 0.002～0.003g, after adding the ultrasonic dispersion 15～30min of absolute ethyl alcohol, the Sb that adds the step 1 of 0.02～0.05g to obtain
2Te
3Nanometer sheet adds the diamine of 3～6mL after stirring, 90～120 ℃ of reaction 1～3h obtain suspension-turbid liquid;
Five, the suspension-turbid liquid centrifugation that step 4 is obtained is to dry in 20～40 ℃ of vacuum in temperature, obtains graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
The present invention includes following beneficial effect:
1, the present invention uses simple method to prepare carbon and coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet, due to strong protection the interface, thereby the possibility that the preparation block materials is become;
2, the graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of the present invention's preparation has good stability, has prevented the surface degradation phenomenon;
3, the graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of the present invention's preparation has solved material surface symmetry problem, because two surfaces up and down of nanometer sheet are coated by the material with carbon element of same thickness simultaneously, avoided the adverse effect of the wobbler action that the impact of substrate causes;
4, the graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of the present invention's preparation has reduced the surface roughness of material, avoids it to the adverse effect of material property;
5, the present invention bears respectively the task that conductivity and Seebeck coefficient are provided with the different piece of composite material, thereby breaks the relevance of the inherence between three physical quantitys that determine conducting material thermoelectricity performance, and the conductivity of material and Seebeck coefficient are improved simultaneously.
Description of drawings
Fig. 1 coats the structural representation of group Ⅴ-Ⅵ compound semiconductor nanometer sheet for the carbon of test one preparation;
Fig. 2 coats the FESEM photo of group Ⅴ-Ⅵ compound semiconductor nanometer sheet for the carbon of test one preparation;
Fig. 3 coats the TEM figure of group Ⅴ-Ⅵ compound semiconductor nanometer sheet for the carbon of test one preparation;
Fig. 4 coats the conductivity of group Ⅴ-Ⅵ compound semiconductor nanometer sheet and does not coat Sb for the carbon of test one preparation
2Te
3The conductivity of nanometer sheet varies with temperature curve chart; Wherein, 1 is Sb
2Te
3Nanometer sheet varies with temperature curve chart, and the conductivity that 2 carbon for test one preparation coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet varies with temperature curve chart;
Fig. 5 coats the Seebeck coefficient of group Ⅴ-Ⅵ compound semiconductor nanometer sheet and does not coat Sb for the carbon of test one preparation
2Te
3The Seebeck coefficient of nanometer sheet varies with temperature curve chart; Wherein, 1 is Sb
2Te
3The Seebeck coefficient of nanometer sheet varies with temperature curve chart, and the Seebeck coefficient that 2 carbon for test one preparation coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet varies with temperature curve chart.
Embodiment
Embodiment one: the carbon of present embodiment coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet by the nano-sheet matrix and is coated on its surperficial carbon-coating and forms; Wherein, the material of described nano-sheet matrix is Bi
2Te
3, Sb
2Te
3, Bi
2Se
3, Sb
2Se
3, comprising doped F e, Cr, Co or Ni magnetic element, its thickness is less than 100nm, and diameter is in micron level; The material of described carbon-coating is agraphitic carbon or Graphene microplate, and thickness is 1～12nm, and can be at its outer surface loaded Ag, Fe, Cr, Co, Ni or Cu nano particle.
Embodiment two: the carbon of present embodiment coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method to carry out according to the following steps:
One, take K (SbO) C of 0.02～0.1g
4H
4O
60.5H
2O, the Na of 0.02～0.1g
2TeO
3Powder, the NaOH of 1～5g and the glucose of 3～10g;
Two, add respectively the deionized water of 5～10mL in the raw material that takes to step 1, mix after stirring and dissolving, and add deionized water and be diluted to 20～40mL, then add the N of 2～4mL
2H
4H
2O is transferred in the reactor of 50mL specification, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain agraphitic carbon and coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
Present embodiment comprises following beneficial effect:
1, present embodiment is used simple method to prepare carbon and is coated the group Ⅴ-Ⅵ compound semiconductor nanometer sheet, due to strong protection the interface, thereby the possibility that the preparation block materials is become;
2, the carbon coating group Ⅴ-Ⅵ compound semiconductor nanometer sheet of present embodiment preparation has good stability, has prevented the surface degradation phenomenon;
3, the carbon of present embodiment preparation coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet and has solved material surface symmetry problem, because two surfaces up and down of nanometer sheet are coated by the material with carbon element of same thickness simultaneously, avoided the adverse effect of the wobbler action that the impact of substrate causes;
4, the carbon of present embodiment preparation coats the surface roughness that the group Ⅴ-Ⅵ compound semiconductor nanometer sheet has reduced material, avoids it to the adverse effect of material property;
5, the present invention bears respectively the task that conductivity and Seebeck coefficient are provided with the different piece of composite material, thereby breaks the relevance of the inherence between three physical quantitys that determine conducting material thermoelectricity performance, and the conductivity of material and Seebeck coefficient are improved simultaneously.
Embodiment three: what present embodiment was different from embodiment two is: K (SbO) C that takes 0.02g in step 1
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3Powder, the NaOH of 1g and the glucose of 3g.Other is identical with embodiment two.
Embodiment four: what present embodiment was different from embodiment two or three is: the N that adds 2mL in step 2
2H
4H
2O。Other is identical with embodiment two or three.
Embodiment five: what present embodiment was different from one of embodiment two to four is: react 5h in step 2 in 180 ℃ of baking ovens.Other is identical with one of embodiment two to four.
Embodiment six: the preparation method that the carbon of present embodiment coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet carries out according to the following steps:
One, take K (SbO) C of 0.02～0.05g
4H
4O
60.5H
2O, the Na of 0.02～0.05g
2TeO
3The NaOH of powder and 0.5～1.0g;
Two, the deionized water that adds 20～40mL in the raw material that takes to step 1 adds the N of 2～4mL after stirring and dissolving
2H
4H
2O is transferred in the reactor of 50mL specification, and compactedness is 60%～80%, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain Sb
2Te
3Nanometer sheet;
Four, take the graphene oxide powder of 0.002～0.003g, after adding the ultrasonic dispersion 15～30min of absolute ethyl alcohol, the Sb that adds the step 1 of 0.02～0.05g to obtain
2Te
3Nanometer sheet adds the diamine of 3～6mL after stirring, 90～120 ℃ of reaction 1～3h obtain suspension-turbid liquid;
Five, the suspension-turbid liquid centrifugation that step 4 is obtained is to dry in 20～40 ℃ of vacuum in temperature, obtains graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
Embodiment seven: what present embodiment was different from embodiment six is: K (SbO) C that takes 0.02g in step 1
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3The NaOH of powder and 1.0g.Other is identical with embodiment six.
Embodiment eight: what present embodiment was different from embodiment six or seven is: the graphene oxide powder that takes 0.002g in step 4.Other is identical with embodiment six or seven.
Embodiment nine: what present embodiment was different from one of embodiment six to eight is: add the ultrasonic dispersion of absolute ethyl alcohol 15min in step 4.Other is identical with one of embodiment six to eight.
Embodiment ten: what present embodiment was different from one of embodiment six to nine is: add the diamine of 3mL after stirring in step 4,95 ℃ of reaction 2h.Other is identical with one of embodiment six to nine.
By following verification experimental verification beneficial effect of the present invention:
Test one: the carbon of this test coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method and realizes according to the following steps:
One, take K (SbO) C of 0.02g
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3Powder, the NaOH of 1g and the glucose of 3g;
Two, add respectively the deionized water of 5mL in the raw material that takes to step 1, mix after stirring and dissolving, and add deionized water and be diluted to 30mL, then add the N of 2mL
2H
4H
2O is transferred in the reactor of 50mL specification, reacts 5h in 180 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 40 ℃ of vacuum dryings in temperature at last, obtain agraphitic carbon and coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
This test is used simple method to prepare carbon and is coated the group Ⅴ-Ⅵ compound semiconductor nanometer sheet, due to strong protection the interface, thereby the possibility that the preparation block materials is become.
The structural representation that the carbon of this test preparation coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet as shown in Figure 1, as can be seen from Figure 1, in carbon-coating is coated on the nano-sheet body.
The FESEM photo of the carbon coating group Ⅴ-Ⅵ compound semiconductor nanometer sheet of this test preparation as can be seen from Figure 2, has curling membranaceous material as shown in Figure 2 in FESEM figure;
The TEM figure that the carbon of this test preparation coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet as shown in Figure 3, as can be seen from Figure 3, the sheet edge support of shaking broken membranoid substance;
Can be drawn by Fig. 2 and Fig. 3, unformed C film coats fully.
The carbon of this test preparation coats conductivity and the Sb of group Ⅴ-Ⅵ compound semiconductor nanometer sheet
2Te
3The conductivity of nanometer sheet varies with temperature curve chart as shown in Figure 4, and wherein, 1 is Sb
2Te
3Nanometer sheet varies with temperature curve chart, the conductivity that 2 carbon for this test preparation coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet varies with temperature curve chart, as can be seen from Figure 4, the carbon of this test preparation coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet with respect to Sb
2Te
3The conductivity of nanometer sheet has the raising of the order of magnitude;
The carbon of this test preparation coats Seebeck coefficient and the Sb of group Ⅴ-Ⅵ compound semiconductor nanometer sheet
2Te
3The Seebeck coefficient of nanometer sheet varies with temperature curve chart as shown in Figure 5, and wherein, 1 is Sb
2Te
3The Seebeck coefficient of nanometer sheet varies with temperature curve chart, the Seebeck coefficient that 2 carbon for this test preparation coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet varies with temperature curve chart, as can be seen from Figure 5, the carbon of this test preparation coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet with respect to Sb
2Te
3The Seebeck coefficient of nanometer sheet is significantly improved;
Can be drawn by Fig. 4 and Fig. 5, conductivity and Seebeck coefficient that the carbon of this test preparation coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet improve simultaneously.
Test two: the carbon of this test coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method and realizes according to the following steps:
One, take K (SbO) C of 0.02g
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3The NaOH of powder and 1.0g;
Two, the deionized water that adds 30mL in the raw material that takes to step 1 adds the N of 2mL after stirring and dissolving
2H
4H
2O is transferred in the reactor of 50mL specification, and compactedness is 80%, reacts 5h in 180 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 40 ℃ of vacuum dryings in temperature at last, obtain Sb
2Te
3Nanometer sheet;
Four, take the graphene oxide powder of 0.002g, after adding the ultrasonic dispersion of absolute ethyl alcohol 15min, the Sb that adds the step 1 of 0.02g to obtain
2Te
3Nanometer sheet adds the diamine of 3mL after stirring, 95 ℃ of reaction 2h obtain suspension-turbid liquid;
Five, the suspension-turbid liquid centrifugation that step 4 is obtained is to dry in 40 ℃ of vacuum in temperature, obtains graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
The graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of this test preparation has good stability, has prevented the surface degradation phenomenon.
The graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of this test preparation has solved material surface symmetry problem, because two surfaces up and down of nanometer sheet are coated by the material with carbon element of same thickness simultaneously, avoided the adverse effect of the wobbler action that the impact of substrate causes.
The graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet of this test preparation has reduced the surface roughness of material, avoids it to the adverse effect of material property.
Claims (10)
1. carbon coats the group Ⅴ-Ⅵ compound semiconductor nanometer sheet, it is characterized in that carbon coating group Ⅴ-Ⅵ compound semiconductor nanometer sheet by the nano-sheet matrix and be coated on its surperficial carbon-coating forming; Wherein, the material of described nano-sheet matrix is Bi
2Te
3, Sb
2Te
3, Bi
2Se
3, comprising doped F e, Cr, Co or Ni magnetic element, its thickness is less than 100nm, and diameter is in micron level; The material of described carbon-coating is agraphitic carbon or Graphene microplate, and thickness is 1～12nm, and can be at its outer surface loaded Ag, Fe, Cr, Co, Ni or Cu metal nanoparticle.
2. carbon coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that carbon coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method and carries out according to the following steps:
One, take K (SbO) C of 0.02～0.1g
4H
4O
60.5H
2O, the Na of 0.02～0.1g
2TeO
3Powder, the NaOH of 1～5g and the glucose of 3～10g;
Two, add respectively the deionized water of 5～10mL in the raw material that takes to step 1, mix after stirring and dissolving, and add deionized water and be diluted to 20～40mL, then add the N of 2～4mL
2H
4H
2O is transferred in the reactor of 50mL specification, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain agraphitic carbon and coat the group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
3. carbon according to claim 2 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that taking in step 1 K (SbO) C of 0.02g
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3Powder, the NaOH of 1g and the glucose of 3g.
4. carbon according to claim 2 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that adding in step 2 the N of 2mL
2H
4H
2O。
5. carbon according to claim 2 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that reacting 5h in step 2 in 180 ℃ of baking ovens.
6. carbon coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that the preparation method of carbon coating group Ⅴ-Ⅵ compound semiconductor nanometer sheet carries out according to the following steps:
One, take K (SbO) C of 0.02～0.05g
4H
4O
60.5H
2O, the Na of 0.02～0.05g
2TeO
3The NaOH of powder and 0.5～1.0g;
Two, the deionized water that adds 20～40mL in the raw material that takes to step 1 adds the N of 2～4mL after stirring and dissolving
2H
4H
2O is transferred in the reactor of 50mL specification, and compactedness is 60%～80%, reacts 5～8h in 180～200 ℃ of baking ovens, obtains mixed liquor;
Three, with reacted mixed liquor with deionized water wash to the pH value be 7, then use absolute ethanol washing, be 20～40 ℃ of vacuum dryings in temperature at last, obtain Sb
2Te
3Nanometer sheet;
Four, take the graphene oxide powder of 0.002～0.003g, after adding the ultrasonic dispersion 15～30min of absolute ethyl alcohol, the Sb that adds the step 1 of 0.02～0.05g to obtain
2Te
3Nanometer sheet adds the diamine of 3～6mL after stirring, 90～120 ℃ of reaction 1～3h obtain suspension-turbid liquid;
Five, the suspension-turbid liquid centrifugation that step 4 is obtained is to dry in 20～40 ℃ of vacuum in temperature, obtains graphene coated group Ⅴ-Ⅵ compound semiconductor nanometer sheet.
7. carbon according to claim 6 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that taking in step 1 K (SbO) C of 0.02g
4H
4O
60.5H
2O, the Na of 0.02g
2TeO
3The NaOH of powder and 1.0g.
8. carbon according to claim 6 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that taking in step 4 the graphene oxide powder of 0.002g.
9. carbon according to claim 6 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, it is characterized in that adding in step 4 the ultrasonic dispersion of absolute ethyl alcohol 15min.
10. carbon according to claim 6 coats group Ⅴ-Ⅵ compound semiconductor nanometer sheet preparation method, adds the diamine of 3mL after it is characterized in that stirring in step 4,95 ℃ of reaction 2h.
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| CN2013100949708A CN103165810A (en) | 2013-03-22 | 2013-03-22 | Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201275A (en) * | 2014-08-05 | 2014-12-10 | 京东方科技集团股份有限公司 | Heat dissipation layer, electronic device with same and production method for electronic device |
| CN107452865A (en) * | 2017-06-23 | 2017-12-08 | 东风商用车有限公司 | A kind of gold nano grain cladding nanometer chip architecture Sb2Te3The preparation method of thermoelectric material |
| CN107697891A (en) * | 2017-09-30 | 2018-02-16 | 合肥师范学院 | The preparation method of carbon parcel core shell structure bismuth telluride nanometer rods and its carbon parcel core shell structure bismuth telluride nanometer rods of preparation and application |
| CN108199049A (en) * | 2018-01-11 | 2018-06-22 | 电子科技大学 | Topological energy storage material and preparation method thereof |
| CN110459670A (en) * | 2019-08-06 | 2019-11-15 | 武汉理工大学 | The method that magnetic Nano composite thermoelectric material is prepared in situ based on non-crystalline material |
| CN115755245A (en) * | 2022-11-28 | 2023-03-07 | 南方科技大学 | Saturable absorber, preparation method thereof and saturable absorber device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201663181U (en) * | 2010-08-19 | 2010-12-01 | 东北农业大学 | Nano thermoelectric body with layered structure |
| CN102437320A (en) * | 2011-11-21 | 2012-05-02 | 北京师范大学 | Graphene-coated mesoporous metallic oxide, and preparation method and use thereof |
| US20120111385A1 (en) * | 2009-08-14 | 2012-05-10 | Ganapathiraman Ramanath | Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof |
-
2013
- 2013-03-22 CN CN2013100949708A patent/CN103165810A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120111385A1 (en) * | 2009-08-14 | 2012-05-10 | Ganapathiraman Ramanath | Doped pnictogen chalcogenide nanoplates, methods of making, and assemblies and films thereof |
| CN201663181U (en) * | 2010-08-19 | 2010-12-01 | 东北农业大学 | Nano thermoelectric body with layered structure |
| CN102437320A (en) * | 2011-11-21 | 2012-05-02 | 北京师范大学 | Graphene-coated mesoporous metallic oxide, and preparation method and use thereof |
Non-Patent Citations (3)
| Title |
|---|
| LUKAS ZHAO, ET AL.: "《Magnetically doped nanoplate crystals of topological insulators Sb2Te3 and Bi2Te3》", 《BULLETIN OF THE AMERICAN PHYSICAL SOCIETY APS MARCH MEETING 2011》 * |
| SEOK-MIN YONG, ET AL.: "《ONE-STEP HYDROTHERMAL SYNTHESIS OF CARBON-COATED PbTe NANOWARES FOR THERMOELECTRIC APPLICATIONS》", 《REVIEWS ON ADVANCED MATERIALS SCIENCE》 * |
| WEIDONG SHI, ET AL.: "《Hydrothermal Synthesis and Thermoelectric Transport Properties of Impurity-Free Antimony Telluride Hexagonal Nanoplates》", 《ADVANCED MATERIALS》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201275A (en) * | 2014-08-05 | 2014-12-10 | 京东方科技集团股份有限公司 | Heat dissipation layer, electronic device with same and production method for electronic device |
| CN104201275B (en) * | 2014-08-05 | 2017-11-14 | 京东方科技集团股份有限公司 | A kind of preparation method of heat dissipating layer, the electronic device for having it and electronic device |
| CN107452865A (en) * | 2017-06-23 | 2017-12-08 | 东风商用车有限公司 | A kind of gold nano grain cladding nanometer chip architecture Sb2Te3The preparation method of thermoelectric material |
| CN107697891A (en) * | 2017-09-30 | 2018-02-16 | 合肥师范学院 | The preparation method of carbon parcel core shell structure bismuth telluride nanometer rods and its carbon parcel core shell structure bismuth telluride nanometer rods of preparation and application |
| CN108199049A (en) * | 2018-01-11 | 2018-06-22 | 电子科技大学 | Topological energy storage material and preparation method thereof |
| CN108199049B (en) * | 2018-01-11 | 2020-06-12 | 电子科技大学 | Topological energy storage material and preparation method thereof |
| CN110459670A (en) * | 2019-08-06 | 2019-11-15 | 武汉理工大学 | The method that magnetic Nano composite thermoelectric material is prepared in situ based on non-crystalline material |
| CN110459670B (en) * | 2019-08-06 | 2021-08-10 | 武汉理工大学 | Method for preparing magnetic nano composite thermoelectric material based on amorphous material in situ |
| CN115755245A (en) * | 2022-11-28 | 2023-03-07 | 南方科技大学 | Saturable absorber, preparation method thereof and saturable absorber device |
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