CN103165374B - Plasma processing device and edge ring applied to the same - Google Patents
Plasma processing device and edge ring applied to the same Download PDFInfo
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- CN103165374B CN103165374B CN201110407353.XA CN201110407353A CN103165374B CN 103165374 B CN103165374 B CN 103165374B CN 201110407353 A CN201110407353 A CN 201110407353A CN 103165374 B CN103165374 B CN 103165374B
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- edge ring
- pedestal
- plasma
- plasma processing
- reaction cavity
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- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a plasma processing device and an edge ring applied to the same. The plasma processing device comprises a reaction cavity surrounding a base, a to-be-processed substrate is fixed on the base, a plasma processing area is formed in space between the base and the top wall of the reaction cavity, and the edge ring is arranged on the base, and is close to and surrounds the substrate. The upper surface of the edge ring is exposed in the plasma processing area, the edge ring comprises a body part and a coating part located on the upper surface of the body part, and the coating is made of TiN material. Damage to masking films from free radicals can be lightened through the fact that the material layer containing titanium is coated on the edge ring.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to it is a kind of in plasma processing apparatus around processing base
The edge ring of piece.
Background technology
Semiconductor technology needs to carry out plasma etching to insulant in copper wiring technique.With critical dimension (CD)
Diminution required precision also more and more higher.(dual damascene are simple typically double damascene etchings in insulating barrier etching
Claim DD) technique, that is, the etching to insulating layer material raceway groove and through hole is completed in same technique.In this etching work of DD
Very thin TiN materials can be used in skill as the such as Low-K materials of the insulation material layer below mask etching.This layer of TiN material by
In and its it is thin less than 10nm, generally only about tens angstromsSo being easily broken in etching process.Mask layer is broken
Inclined-plane is formed at the bad groove opening that lower section etching can be caused to be formed, this can cause the reliability decrease of groove.Through inventor
Research and experiment find it is the free radical produced in plasma etching to the principal element that TiN masks are damaged
(radical), generally substrate edge position is being processed in plasma etching machine is particularly capacitively coupled plasma etching machine
The number of free radical put significantly larger than processes the concentration of substrate center position.This has resulted in etching result with number of free radical point
Corresponding uneven of cloth.
Therefore, it is required in the industry simply and effectively improve edge effect, improves process uniformity.
The content of the invention
For the problems referred to above in background technology, the present invention propose the plasma treatment appts that can improve homogeneity and
For the edge ring of plasma processing apparatus.
First aspect present invention provides a kind of edge ring for being applied to plasma processing apparatus, wherein, the plasma
Processing meanss include that a reaction cavity, reaction cavity surrounds a pedestal, and the reaction cavity relative with pedestal is including a top
Wall, includes that an electrode connects radio-frequency power supply in pedestal, is fixed with substrate to be processed on pedestal, pedestal and reaction cavity roof it
Between space constitute a plasma process area,
One edge ring is arranged on pedestal near and surround the substrate, and the edge ring upper surface is exposed to described etc.
Ion processing district, wherein the edge ring includes a body part and the cladding portion positioned at body part upper surface, it is described
Coating is titanium-containing materials.Carbonaceous material includes one of TiN, titanium oxide, titanium fluoride.
Wherein the plasma processing chamber can be it is capacity coupled can also be inductive type plasma reaction chamber.Peace
Substrate pending on pedestal is mounted in including insulation material layer to be etched under TiN masks and mask, by plasma treatment shape
Into the groove and through hole of double damascene figures.The TiN mask thicknesses are less than 10nm.
Description of the drawings
Fig. 1 is the platform structural representation of the plasma etching device of embodiments of the invention.
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is illustrated.
Fig. 1 is the structural representation of the plasma treatment appts of a specific embodiment of the invention.As shown in figure 1, this
It is bright there is provided a kind of pedestal 22 for carrying substrates 20 for being applied to plasma processing apparatus 100, wherein, the substrate 20
Positioned at the top of the pedestal 22.Also include a substrate holding apparatus 21 on the pedestal 22, it is typical such as electrostatic chuck or
Mechanical chucks.Radio-frequency power supply is connected in pedestal including radio-frequency electrode send radio-frequency (RF) energy to plasma reaction area.At plasma
Reason device also include one simultaneously as gas spray Top electrode 11, the gas spray 11 is connected to source of the gas 110.
Also include an edge ring 10 around substrate holding apparatus and substrate on base station, the edge ring 10 can have not
Same material, can be conductor, quasiconductor or insulator such as silicon, carborundum, quartz etc., and these materials constitute edge ring
Body part.These edge rings can play regulation substrate edge region electric field level and side by the design of material and shape
To the effect of distribution, can also protect the base station lower part will not be by plasma etching, moreover it is possible to affect the temperature in substrate edge region
Degree and polymer deposition.Different technique when can be used according to each reaction chamber in specific edge ring material selection course
Demand is selecting.
When it is thin mask layer etching pair damascene structure that the present invention is using TiN, due to plasma with free radical whole
It is unevenly distributed on chip, usual free radical (radical) can be much larger than middle center wafer position in the concentration of marginal position
The concentration put.So the thin masks of TiN in marginal position can faster be destroyed and cause following etching target to occur not wishing
The etching phenomenon of prestige.And these destroyed molecule parts are taken away by gas extraction system, a part still remains in substrate surface
Spread apart and.
The inventive method includes adding layer of surface coating on a body part in edge ring, and the coating is TiAlN thin film,
Body constitutes the basic configuration of edge ring, and the thickness of coating is much smaller than body part.Substantial amounts of free radical during the course of the reaction
Reaching edge ring rear portion can react with the mask layer TiN of substrate surface, and another part can be with the TiN materials on the surface of edge ring 10
Material reaction, has thus consumed originally in a large amount of free radicals of the upper area of substrate peripheral edge ring 10.Such substrate edge
The number of free radical in region can be much larger than substrate outer peripheral areas, so can spread to the position of edge ring 10 of low concentration, while whole
Free radical above individual substrate also spreads to the periphery.So by plating one layer of TiN material film in the edge ring of substrate periphery,
So that the number of free radical in whole etching process above substrate all can reduce relative to prior art, wherein above substrate
Marginal area is maximum due to the amplitude that isolated edge ring reduces recently.Purpose of the present invention protection TiN mask layers are finally reached, are offset
Due to the free radical skewness that reaction chamber reasons in structure is caused.
Edge ring plated film again can be taken out after the TiN plated films on the top layer of edge ring of the present invention 10 are consumed, realizes following
Ring is utilized.And in addition to TiN other can with radical reaction and also reacted product will not article on plasma process make
Edge ring surface can also be plated to into dysgenic material.Such as titanium oxide, or titanium fluoride, can reach the present invention
Purpose.
Wherein on edge ring body part plated film belong to known technology can be real with CVD method or spraying etc.
It is existing, will not be described here.
The present invention is except can be used for capacitive coupling plasma processing chamber as shown in Figure 1, it is also possible to for other
Plasma reaction chamber such as inductive coupling reaction chamber, it is inductance coil that both differences are to surround outside inductance idol or reaction chamber
The window consisted of insulating layer material is transmitted RF energy in reaction chamber.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Various modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of plasma processing apparatus, the plasma treatment appts are applied to the insulation below with TiN as mask etching
Material layer, wherein, the plasma treatment appts include：
One reaction cavity, reaction cavity surrounds a pedestal, and the reaction cavity relative with pedestal includes a roof, in pedestal
Including an electrode connection radio-frequency power supply, substrate to be processed, the space between pedestal and reaction cavity roof are fixed with pedestal
A plasma process area is constituted,
One edge ring is arranged on pedestal near and surround the substrate, and the edge ring upper surface is exposed to the plasma
Processing district, wherein the edge ring includes a body part and the cladding portion positioned at body part upper surface, the coating
For titanium-containing materials.
2. plasma processing apparatus according to claim 1, it is characterised in that the reaction cavity roof includes
Top electrode.
3. plasma processing apparatus according to claim 1, it is characterised in that the plasma reaction chamber includes
One coil for being connected with radio-frequency power supply is located at reaction cavity top.
4. plasma processing apparatus according to claim 1, it is characterised in that the insulation material layer is Low-K materials.
5. plasma processing apparatus according to claim 1, it is characterised in that the TiN mask thicknesses are less than 10nm.
6. plasma processing apparatus according to claim 1, it is characterised in that the titanium-containing materials include titanium nitride,
One of titanium oxide, titanium fluoride.
7. a kind of edge ring for being applied to plasma treatment appts, the plasma treatment appts are applied to by mask of TiN carve
Insulation material layer below erosion, wherein the plasma treatment appts include：One reaction cavity, reaction cavity surrounds a base
Seat, is fixed with substrate to be processed on pedestal, the space between pedestal and reaction cavity roof constitutes a plasma process area,
Wherein described edge ring is arranged on pedestal near and surround the substrate, and the edge ring upper surface is exposed to described etc.
Ion processing district, wherein the edge ring includes a body part and the cladding portion positioned at body part upper surface, it is described
Coating is titanium-containing materials.
8. the edge ring for being applied to plasma treatment appts according to claim 7, it is characterised in that the insulant
Layer is Low-K materials.
9. the edge ring for being applied to plasma treatment appts according to claim 7, it is characterised in that the TiN masks
Thickness is less than 10nm.
10. the edge ring for being applied to plasma treatment appts according to claim 7, it is characterised in that described containing titanium
Material includes one of titanium nitride, titanium oxide, titanium fluoride.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110407353.XA CN103165374B (en) | 2011-12-08 | 2011-12-08 | Plasma processing device and edge ring applied to the same |
| TW101110045A TW201324577A (en) | 2011-12-08 | 2012-03-23 | Plasma processing device and edge ring applicable to the plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110407353.XA CN103165374B (en) | 2011-12-08 | 2011-12-08 | Plasma processing device and edge ring applied to the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103165374A CN103165374A (en) | 2013-06-19 |
| CN103165374B true CN103165374B (en) | 2017-05-10 |
Family
ID=48588362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110407353.XA Active CN103165374B (en) | 2011-12-08 | 2011-12-08 | Plasma processing device and edge ring applied to the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103165374B (en) |
| TW (1) | TW201324577A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576305A (en) * | 2013-10-23 | 2015-04-29 | 中微半导体设备(上海)有限公司 | Self-cleaning vacuum treatment chamber |
| CN111180370A (en) * | 2020-02-21 | 2020-05-19 | 北京北方华创微电子装备有限公司 | Wafer bearing tray and semiconductor processing equipment |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6638871B2 (en) * | 2002-01-10 | 2003-10-28 | United Microlectronics Corp. | Method for forming openings in low dielectric constant material layer |
| US20050189068A1 (en) * | 2004-02-27 | 2005-09-01 | Kawasaki Microelectronics, Inc. | Plasma processing apparatus and method of plasma processing |
| KR100610010B1 (en) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | Apparatus for |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| US20080296261A1 (en) * | 2007-06-01 | 2008-12-04 | Nordson Corporation | Apparatus and methods for improving treatment uniformity in a plasma process |
| US7837827B2 (en) * | 2007-06-28 | 2010-11-23 | Lam Research Corporation | Edge ring arrangements for substrate processing |
| TWM370181U (en) * | 2009-07-03 | 2009-12-01 | Advanced Micro Fab Equip Inc | A plasma processing apparatus |
| TWI423736B (en) * | 2010-02-12 | 2014-01-11 | Advanced Micro Fab Equip Inc | A plasma processing apparatus and a processing method thereof |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
-
2011
- 2011-12-08 CN CN201110407353.XA patent/CN103165374B/en active Active
-
2012
- 2012-03-23 TW TW101110045A patent/TW201324577A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN103165374A (en) | 2013-06-19 |
| TWI466162B (en) | 2014-12-21 |
| TW201324577A (en) | 2013-06-16 |
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| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |