CN103165372A - Method of controlling distribution gradient of filled elements in soaking and filling of plasm - Google Patents
Method of controlling distribution gradient of filled elements in soaking and filling of plasm Download PDFInfo
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- CN103165372A CN103165372A CN2011104125568A CN201110412556A CN103165372A CN 103165372 A CN103165372 A CN 103165372A CN 2011104125568 A CN2011104125568 A CN 2011104125568A CN 201110412556 A CN201110412556 A CN 201110412556A CN 103165372 A CN103165372 A CN 103165372A
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Abstract
The invention discloses a method of controlling distribution gradient of filled elements in soaking and filling of plasm and belongs to the technical field of semi-conductor manufacture. According to the method of controlling the distribution gradient of the filled elements in soaking and filling of the plasm, filling and mixing of ions are performed in a manner of multiple kinds of energy filling. The multiple kinds of energy relate to multiple kinds of energy in an energy interval where the lowest energy the highest energy exists. The lowest energy is the minimum energy for achieving that mixed elements are filled but do not deposit on the surface of a silicon substrate. The highest energy is the maximum filling energy which can meet filling junction depth. With the method of controlling the distribution gradient of the filled elements in soaking and filling of the plasm, condensation of the mixed ions is distributed along the depth and in compliance with Gaussian distribution and condensation of the filled elements is abruptly distributed on a PN place.
Description
Technical field
The present invention relates to plasma immersion injection technique field, relate in particular to and a kind ofly inject for plasma immersion the method for injecting element distribution steepness of controlling.
Background technology
Along with the cmos device characteristic size is constantly dwindled, semiconductor technology has entered the 32/22nm technology node, and source-and-drain junction enters in 10nm deeply.For satisfying super shallow junction demand, the doping ion energy enters inferior kilovolt range.Traditional beamline ion implanters injection technique can't satisfy super shallow junction making demand in the following technology node of 32nm.Plasma immersion injects and is considered to substitute the new technology that the beamline ion implanters injection technique is made super shallow junction, yet plasma immersion is infused in and also has challenge when making super shallow junction, in substrate, the doping ion concentration departs from Gaussian Profile with the distribution of the degree of depth, the ion concentration of particularly adulterating is not precipitous in the distribution at PN junction place, thereby causes the electrology characteristic of semiconductor device to degenerate.This point is particularly serious in the plasma immersion dopant implant, because plasma immersion dopant implant technology is not selected the mass of ion and the energy that are injected in silicon chip, so even if the ion of equal in quality is because the ion of the difference of Implantation Energy, identical energy rests on the different depth in silicon chip because quality is different, thereby make the doping ion concentration depart from Gaussian Profile with the distribution of the degree of depth, and the doping ion concentration is more mild at the PN junction place.At present the problems referred to above also do not had solution preferably.
Summary of the invention
For the above-mentioned problems in the prior art, the invention provides a kind of method of controlling injection element distribution steepness of injecting for plasma immersion.
The invention provides a kind of the injection for plasma immersion and control the method for injecting element distribution steepness, carry out ion implantation doping by the mode that multi-energy injects.
In one example, described multi-energy is the different-energy between an energy range, has minimum energy and highest energy between described energy range.
In one example, described minimum energy is to realize that doped chemical injects and be not deposited on the least energy on silicon chip surface, and described highest energy is to satisfy the maximum Implantation Energy that injects junction depth.
In one example, described minimum energy is zero.
In one example, the mode of described multi-energy injection is that Implantation Energy is changing or discontinuous variation between minimum energy and highest energy in time continuously.
In one example, Implantation Energy is from the minimum energy temporal evolution to highest energy, or Implantation Energy is from the highest energy temporal evolution to minimum energy.
In one example, Implantation Energy changes to minimum energy from the minimum energy temporal evolution to highest energy and from highest energy, or Implantation Energy changes to highest energy from the highest energy temporal evolution to minimum energy and from minimum energy.
In one example, Implantation Energy changes or discontinuous variation in time continuously with default rule between minimum energy and highest energy.
In one example, the continuous or discontinuous cycle changes Implantation Energy in time with default rule between minimum energy and highest energy.
In one example, when carrying out ion implantation doping, the mode of repeatedly injecting with multi-energy is carried out ion implantation doping.
In one example, the control of Implantation Energy realizes having linear relationship between Implantation Energy and negative bias voltage by negative dc offset voltage or pulse direct current bias voltage.
The invention enables the doping ion concentration to meet Gaussian Profile with the distribution of the degree of depth, and it is precipitous at PN punishment cloth to inject concentration of element.
Description of drawings
Fig. 1 is that typical doping ion concentration is with the depth distribution curve synoptic diagram;
Fig. 2 is that different-energy doping ion concentration is with the distribution curve schematic diagram of the degree of depth;
Fig. 3 is that doping ion concentration after multi-energy injects is with the depth distribution curve synoptic diagram;
Fig. 4-Fig. 8 is energy or bias voltage temporal evolution schematic diagram.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
The embodiment of the present invention provides a kind of plasma immersion to inject the method for controlling ion CONCENTRATION DISTRIBUTION steepness, realizes injecting concentration of element precipitous at PN punishment cloth, and it comprises a kind of doping ion injection method that multi-energy injects.Multi-energy refers to the different-energy between an energy range, has a minimum energy and highest energy between this energy range, and minimum energy refers to realize that doped chemical injects and be not deposited on the least energy on silicon chip surface, and minimum energy can be zero.Highest energy refers to satisfy the maximum Implantation Energy that injects junction depth, can be also the highest energy that injected system can reach.Multi-energy injects and refer to that Implantation Energy is being time dependent between minimum energy and highest energy, and for example Implantation Energy changes to highest energy from minimum energy, and Implantation Energy changes to minimum energy from highest energy.Implantation Energy can be between minimum energy and highest energy with certain rule at temporal evolution, for example Implantation Energy changes to highest energy from minimum energy and changes to minimum energy again, and perhaps Implantation Energy changes to minimum energy from highest energy and changes to highest energy again.Implantation Energy can change in cyclic variation in time with certain rule between minimum energy and highest energy.The ion energy can discontinuously change in time, and the injection length of each energy point can be identical or different, equates or does not wait the interval time of adjacent energy point.Ion energy temporal evolution can be continuous.It can be repeatedly to inject realization that multi-energy injects, and wherein is injected to the multi-energy described in single energy injection or such scheme at every turn and injects or combination both.Negative bias voltage in injected system realizes by controlling in the control room of ion energy, and negative bias voltage can for negative Dc bias, can be also the negative pulse Dc bias.The first magnitude of voltage of minimum energy correspondence and negative bias voltage, the first bias voltage is more than or equal to null value.The second voltage value of highest energy correspondence and negative bias voltage, second voltage value are the value greater than zero.The Implantation Energy corresponding variation between the first magnitude of voltage and second voltage value of the negative bias voltage by being connected to silicon chip over time realizes.
Fig. 1 is that typical ion concentration is with the scatter chart of the degree of depth.When single energy injected, the doping ion concentration distribution was to inject junction depth 1001 places mild.For making the ion CONCENTRATION DISTRIBUTION to inject the junction depth place precipitous, the invention discloses a kind of multi-energy method for implanting.As shown in Figure 2, the energy of different ions, doping ion concentration peak value and injection junction depth position are different, after adopting the multi-energy method for implanting, the doping ion concentration distribution that each energy is corresponding will superpose, and the doping ion concentration distribution after stack as shown in Figure 3.The doping ion concentration was with more smooth near its peak value of depth distribution after multi-energy injected, and it is more precipitous to inject junction depth place ion concentration distribution.For plasma immersion injected, the energy of ion determined by the negative bias voltage value that is connected to substrate, had linear approximate relationship between both.
Embodiment one
The present embodiment has the benefit that above-mentioned multi-energy injects, its process also as mentioned above, its Implantation Energy or inject negative bias voltage and change continuously in time as extremely shown in Figure 7 in Fig. 4.Ion energy or negative bias voltage be monotonously from minimum energy or bias voltage temporal evolution to highest energy or bias voltage, perhaps from highest energy or bias voltage temporal evolution to minimum energy or bias voltage.Ion energy or negative bias voltage can also be first monotonously from minimum energy or bias voltage temporal evolution to highest energy or bias voltage more monotonously temporal evolution to minimum energy or bias voltage, as shown in Figure 6; Or from highest energy or bias voltage temporal evolution to minimum energy or bias voltage more monotonously temporal evolution to highest energy or bias voltage.Ion energy or negative bias voltage can also be with the time dependent pattern of certain rule, as shown in Figure 7.
Embodiment two
The present embodiment has the benefit that above-mentioned multi-energy injects, its process also as mentioned above, its Implantation Energy or inject negative bias voltage discontinuous variation such as Fig. 8 in time.Ion energy or negative bias voltage dullness are discontinuously from minimum energy or bias voltage temporal evolution to highest energy or bias voltage, the time t1 that each energy or bias voltage continue can equate or not wait, and t2 interval time of adjacent two energy or bias voltage equates or do not wait.Be similar to embodiment one, each ion energy or negative bias voltage can also dullness change to minimum energy or bias voltage from minimum energy or bias voltage temporal evolution to highest energy or bias voltage discontinuously again; Perhaps change to again highest energy or bias voltage from highest energy or bias voltage temporal evolution to minimum energy or bias voltage; Perhaps with certain rule temporal evolution.In above-mentioned various energy or bias voltage value variation relation, each energy or bias voltage value are put to such an extent that lasting injection length can equate or not wait, and equate or do not wait the interval time between adjacent energy or bigoted magnitude of voltage point.
The above is only the preferred embodiment of the present invention, but protection range of the present invention is not limited to this.Any those skilled in the art all can carry out suitable change or variation to it in technical scope disclosed by the invention, and this change or change all should be encompassed in protection scope of the present invention within.
Claims (11)
1. one kind is used for the method that plasma immersion injects control injection element distribution steepness, it is characterized in that, carries out ion implantation doping by the mode that multi-energy injects.
2. the method for element distribution steepness is injected in control as claimed in claim 1, it is characterized in that, described multi-energy is the different-energy between an energy range, has minimum energy and highest energy between described energy range.
3. the method for element distribution steepness is injected in control as claimed in claim 2, it is characterized in that, described minimum energy is to realize that doped chemical injects and be not deposited on the least energy on silicon chip surface, and described highest energy is the maximum Implantation Energy that injects junction depth.
4. the method for element distribution steepness is injected in control as claimed in claim 3, it is characterized in that, described minimum energy is zero.
5. the method for element distribution steepness is injected in control as claimed in claim 2, it is characterized in that, the mode that described multi-energy injects is that Implantation Energy is changing or discontinuous variation between minimum energy and highest energy in time continuously.
6. the method for element distribution steepness is injected in control as claimed in claim 5, it is characterized in that, Implantation Energy is from the minimum energy temporal evolution to highest energy, or Implantation Energy is from the highest energy temporal evolution to minimum energy.
7. the method for element distribution steepness is injected in control as claimed in claim 5, it is characterized in that, Implantation Energy changes to minimum energy from the minimum energy temporal evolution to highest energy and from highest energy, or Implantation Energy changes to highest energy from the highest energy temporal evolution to minimum energy and from minimum energy.
8. the method for element distribution steepness is injected in control as claimed in claim 5, it is characterized in that, Implantation Energy changes or discontinuous variation in time continuously with default rule between minimum energy and highest energy.
9. the method for element distribution steepness is injected in control as claimed in claim 8, it is characterized in that, the continuous or discontinuous cycle changes Implantation Energy in time with default rule between minimum energy and highest energy.
10. the method for element distribution steepness is injected in control as claimed in claim 5, it is characterized in that, when carrying out ion implantation doping, the mode of repeatedly injecting with multi-energy is carried out ion implantation doping.
11. the method for element distribution steepness is injected in control as claimed in claim 5, it is characterized in that, the control of Implantation Energy realizes having linear relationship between Implantation Energy and negative bias voltage by negative dc offset voltage or pulse direct current bias voltage.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040224488A1 (en) * | 2002-11-19 | 2004-11-11 | Silterra Malaysia Sdn. Bhd. | Method of forming ultra shallow junctions |
| JP4275753B2 (en) * | 1996-06-14 | 2009-06-10 | アプライド マテリアルズ インコーポレイテッド | Ion implantation method |
| TW201032264A (en) * | 2008-10-06 | 2010-09-01 | Varian Semiconductor Equipment | Reduced implant voltage during ion implantation |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4275753B2 (en) * | 1996-06-14 | 2009-06-10 | アプライド マテリアルズ インコーポレイテッド | Ion implantation method |
| US20040224488A1 (en) * | 2002-11-19 | 2004-11-11 | Silterra Malaysia Sdn. Bhd. | Method of forming ultra shallow junctions |
| TW201032264A (en) * | 2008-10-06 | 2010-09-01 | Varian Semiconductor Equipment | Reduced implant voltage during ion implantation |
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Application publication date: 20130619 |