CN103158201A - Lap joint method between hollow silicon core and solid silicon core - Google Patents
Lap joint method between hollow silicon core and solid silicon core Download PDFInfo
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- CN103158201A CN103158201A CN2011104082789A CN201110408278A CN103158201A CN 103158201 A CN103158201 A CN 103158201A CN 2011104082789 A CN2011104082789 A CN 2011104082789A CN 201110408278 A CN201110408278 A CN 201110408278A CN 103158201 A CN103158201 A CN 103158201A
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Abstract
The invention discloses a lap joint method between a hollow silicon core and a solid silicon core, and belongs to lap joint technology of silicon cores. The hollow silicon core comprises a horizontal silicon core (1) and the solid silicon core comprises vertical silicone core pipes (3), wherein two ends of the horizontal silicon core pipe (1) are respectively connected with the upper ends of the two vertical silicon core pipe (5) in a clamping mode or an inserting mode to form an n-shaped structure. A patent family of the invention discloses a machining process of the hollow silicone core. The invention discloses a lap joint method between the hollow silicone core and the solid silicon core, wherein the method directs at later use of the hollow silicon core. The horizontal silicon core is a solid silicon core and the vertical silicone core pipes are hollow silicon cores. The hollow silicon cores and the solid silicon core are combined to form an n-shaped conductive circuit, and therefore the purpose that lodging occurs as little as possible is achieved. The vertical silicon core pipes and the solid silicon core have the advantages that the weights are basically equal, but the diameter of the hollow silicon core is far greater than that of the solid silicon core.
Description
[technical field]
The invention belongs to the overlapping technology of silicon core, especially relate to the bridging method of a kind of hollow silicon core and solid silicon core or other crystalline material.
[background technology]
Known, produce at Siemens Method that in the process of polysilicon, silicon core overlapping technology is a very important technology, it be mainly used in production of polysilicon a link, be the reduction reaction process.The principle of described reduction reaction process is: reduction reaction is to carry out in an airtight reduction furnace, first is overlapped to form several closed-loop paths with the silicon core in reduction furnace, namely " bridging " in jargon before shove charge; Each closed-loop path forms " ∏ " character form structure by two perpendicular silicon cores and a horizontal silicon core; Two perpendicular silicon cores of each closed-loop path are connected on respectively on two electrodes on furnace bottom, two electrodes connect respectively the both positive and negative polarity of dc source, then the silicon core is heated, add and hanker one group of silicon core that overlaps and be equivalent to a large resistance, then pass into hydrogen and trichlorosilane in airtight reduction furnace, begin to carry out reduction reaction; Like this, required polysilicon will generate at the silicon wicking surface.The above is exactly silicon core and the application of overlapping technology in production of polysilicon thereof.
Produce in the process of polysilicon at existing Siemens Method, because the silicon core diameter that uses is generally the solid silicon core about φ 8mm or cuts the square silicon core of formation through line, overlap joint silicon core well is in normal reduction reaction process, the silicon that generates constantly is deposited on the silicon wicking surface, the surface area of silicon core is also increasing, reactant gas molecules also increases collision opportunity and the quantity of depositional plane (silicon wicking surface) thereupon, when the sedimentation rate of unit are was constant, the polysilicon amount of the larger deposition of surface area also the more; Therefore when polycrystalline silicon growth, the reduction reaction time is longer, and the diameter of silicon core is larger, and the growth efficiency of polysilicon is also higher, so not only can greatly enhance productivity, and has also reduced production cost simultaneously; But existing solid silicon core or square silicon core are in reduction, all can't well overcome because the silicon core intensity of overlap joint " solid silicon core or square silicon core " is lower, the silicon core lodging phenomenon that causes thus producing in reduction process is brought unnecessary trouble and the increase of cost to production; The described lodging phenomenon of silicon core refers to that the silicon core grows in airtight container, the consequence of bringing due to filled circles silicon core or the technique of square silicon core own is:
1), solid silicon core;
Usually in 8～10MM left and right, grow to 120～150MM by 8～10MM is example to the diameter of solid silicon core, grows during beginning comparatively slow, and the later stage, the speed of growth was also accelerated thereupon along with the increasing of diameter; If directly adopt large diameter solid silicon core, can cause the weight of silicon core body to increase; And in the pulling process of major diameter solid silicon core, owing to will obtaining larger-diameter silicon core, draw rate will control to very slow, and production efficiency is low; And in growth course because diameter is larger, stretching difficulty is high, and each drawing that only can be a small amount of, namely drawing radical will be restricted, for also having a lot of difficult points to overcome in dilated diameter problem prior art, major diameter silicon core draws the electric energy and the protective gas that consume simultaneously also increases thereupon, and major diameter silicon core also is not easy to following process and carrying simultaneously;
2), square silicon core;
The square silicon core that the line cutting occurred in the market, owing to being in the cutting on line process, crystal is subject to the microseism in diamond wire saw, make finished product side's silicon in-core more naked eyes micro-fractures inconspicuous occur, moment in silicon core growth energising is larger for the impact of slight crack, make silicon core growth course Fracture or the amount of collapsing increase considerably, the lighter causes this group silicon core to grow, and causes blowing out when serious; The intensity that adopts so large diameter silicon core to overlap to realize the Fast Growth of polycrystalline rod and improve silicon core self has just become the technology barriers that those skilled in the art are difficult to overcome; So, for how strengthening the long-term demand that the silicon core diameter is also those skilled in the art.
[summary of the invention]
In order to overcome the deficiency in background technology, patent families of the present invention discloses the processing technology of hollow silicon core, the present invention discloses for a kind of hollow silicon core of the follow-up use of hollow silicon core and the bridging method of solid silicon core, it is that solid and perpendicular silicon core pipe is hollow silicon core that the present invention adopts horizontal silicon core, utilize hollow silicon core to be combined formation " ∏ " shape galvanic circle with the solid silicon core, realized the purpose of the generation that the lodging phenomenon is the least possible; Substantially equate because perpendicular silicon core pipe of the present invention has weight with the solid silicon core, but diameter is far longer than the beneficial features of solid silicon core.
In order to realize the purpose of foregoing invention, the present invention adopts following technical scheme:
The bridging method of a kind of hollow silicon core and solid silicon core comprises horizontal silicon core and perpendicular silicon core pipe, and the two ends of described horizontal silicon core are connected to form " ∏ " character form structure by the upper end of clamping or grafting and two perpendicular silicon core pipes respectively.
The bridging method of described hollow silicon core and solid silicon core, the two ends of described horizontal silicon core are connected to form " ∏ " character form structure by the upper end of grafting and two perpendicular silicon core pipes respectively, being respectively equipped with the spliced eye of mutual perforation in the both sides, top of two perpendicular silicon core pipes, pegs graft with the spliced eye of two perpendicular silicon core pipe top settings respectively and forms " ∏ " character form structure in the both sides of described horizontal silicon core.
The bridging method of described hollow silicon core and solid silicon core is respectively equipped with spacing tangent plane in the bottom, both sides of horizontal silicon core, the spliced eye bottom clamping that two spacing tangent planes of horizontal silicon core arrange with two perpendicular silicon core pipe tops respectively.
The bridging method of described hollow silicon core and solid silicon core, the spacing tangent plane width of described horizontal silicon core is more than or equal to width between two spliced eye outsides of each perpendicular silicon core pipe.
The bridging method of described hollow silicon core and solid silicon core, the two ends of described horizontal silicon core are connected to form " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes respectively, the both sides, upper end of described two perpendicular silicon core pipes are respectively equipped with " U " shape opening, and the both sides of horizontal silicon core are placed on " U " shape opening of two perpendicular silicon core pipe upper ends and form " ∏ " character form structure.
The bridging method of described hollow silicon core and solid silicon core is respectively equipped with spacing tangent plane in the bottom, both sides of horizontal silicon core, and two spacing tangent planes form " ∏ " character form structure with the bottom clamping of " U " shape opening of described two perpendicular silicon core pipe upper ends respectively.
The bridging method of described hollow silicon core and solid silicon core is respectively equipped with the cutting limit face on the front-back of the both sides of horizontal silicon core, described cutting limit face is connected on " U " shape perforated wall of two perpendicular silicon core pipe upper ends and forms " ∏ " character form structure.
The bridging method of described hollow silicon core and solid silicon core, the two ends of described horizontal silicon core are connected to form respectively another replacing structure of " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes, bottom, both sides at horizontal silicon core is respectively equipped with spacing tangent plane, two perpendicular silicon core pipe upper ends be respectively equipped with " U " shape opening on the opposite, " U " shape open bottom that two spacing tangent planes of described horizontal silicon core are connected to respectively two perpendicular silicon core pipes forms " ∏ " character form structure.
The bridging method of described hollow silicon core and solid silicon core is respectively equipped with the circular arc termination at the two ends of horizontal silicon core, " U " shape opening relative inner face kiss of described circular arc termination and perpendicular silicon core pipe is joined.
The bridging method of described hollow silicon core and solid silicon core, another replacing structure of described circular arc termination, the circular arc termination is set to hemispherical ends.
The bridging method of described hollow silicon core and solid silicon core, the lower ends of two perpendicular silicon core pipes are set to respectively the plane or circle is led in the outside or circle is led in inside, the plane of described two perpendicular silicon core pipe lower ends or outsidely lead circle or innerly lead graphite seat in circle and body of heater or the positive and negative electrode of tungsten seat or molybdenum seat is connected to form a closed-loop path.
The bridging method of described hollow silicon core and solid silicon core, be provided with at least one to the grafting stator of downward-extension on the plane that arranges respectively in two perpendicular silicon core pipe lower ends, the graphite seat that two grafting stators and body of heater are interior or the positive and negative electrode of tungsten seat or molybdenum seat are connected to form a closed-loop path.
Owing to adopting technique scheme, the present invention possesses following advantage:
Due to the bridging method that has adopted hollow silicon core of the present invention and solid silicon core, utilize one of middle and upper part, " ∏ " character form structure galvanic circle to be set to solid silicon core overlap joint, the solid silicon core on top is exactly the effect of playing bridging, but two perpendicular silicon core pipes of bottom use hollow silicon core, namely erect silicon core pipe, the intensity of perpendicular silicon core pipe will be far longer than the solid silicon core, and after strength increase, it is resistant to lodging will be better than the solid silicon core far away; The present invention not only makes the silicon core that overlaps in lap-joint, larger contact-making surface be arranged, and need not to draw this step of drawing silicon core spherosome in present all techniques, and significantly reduced use cost and cut down procedure of processing than prior art, guarantee the rising of yield rate, overcome the least possible generation of lodging phenomenon of silicon core in process of production; To be far longer than cylindrical structural or the square silicon core of solid silicon core due to the intensity of perpendicular silicon core pipe of the present invention " hollow silicon core ", after described perpendicular silicon core pipe " hollow silicon core " strength increase, its resistant to lodging will being better than far away has the solid silicon core now, and it is compared with the solid silicon core, has weight substantially equal, but diameter is far longer than the beneficial features of solid silicon core, is the basic patent of original creation.
[description of drawings]
Fig. 1 is grafting perspective view of the present invention;
Fig. 2 is the horizontal silicon core end spacing tangent plane connected structure schematic diagram of the embodiment of the present invention;
Fig. 3 is perpendicular silicon core tube end " U " the type open card connecting structure schematic diagram of the embodiment of the present invention;
Fig. 4 is perpendicular silicon core tube end one-sided " U " the type open card connecting structure schematic diagram of the embodiment of the present invention;
Fig. 5 is perpendicular silicon core pipe lower end structure schematic diagram of the present invention;
Fig. 6 is that round structural representation is led in outside, perpendicular silicon core pipe lower end of the present invention;
Fig. 7 is that round structural representation is led in inside, perpendicular silicon core pipe lower end of the present invention;
Fig. 8 is that perpendicular silicon core pipe of the present invention lower end arranges grafting stator structural representation;
In the drawings: 1, horizontal silicon core; 2, spliced eye; 3, perpendicular silicon core pipe; 4, spacing tangent plane; 5, cutting limit face; 6, " U " shape opening; 7, circular arc termination; 8, circle is led in the outside; 9, circle is led in inside; 10, grafting stator.
[specific embodiment]
With reference to following embodiment, can be explained in more detail the present invention, the present invention is not limited to these embodiment.
The bridging method of 1～8 described hollow silicon core and solid silicon core, comprise horizontal silicon core 1 and perpendicular silicon core pipe 3 by reference to the accompanying drawings, and the two ends of described horizontal silicon core 1 are connected to form " ∏ " character form structure by the upper end of clamping or grafting and two perpendicular silicon core pipes 3 respectively; The bottom of two perpendicular silicon core pipes 3 and graphite seat or tungsten seat or molybdenum seat are connected with the electrode of reduction furnace, just can form " ∏ " shape galvanic circle.
1 or 2 structures that provide by reference to the accompanying drawings, the two ends of described horizontal silicon core 1 are connected to form " ∏ " character form structure by the upper end of grafting and two perpendicular silicon core pipes 3 respectively, being respectively equipped with the spliced eye 2 of mutual perforation in the both sides, top of two perpendicular silicon core pipes 3, pegs graft with the spliced eye 2 of two perpendicular silicon core pipe 3 tops settings respectively and forms " ∏ " character form structures in the both sides of described horizontal silicon core 1; The bottom of two perpendicular silicon core pipes 3 and graphite seat or tungsten seat or molybdenum seat are connected with the electrode of reduction furnace, just can form " ∏ " shape galvanic circle; The present invention considers the degree of being connected firmly of horizontal silicon core 1 and two perpendicular silicon core pipes 3, be respectively equipped with spacing tangent plane 4 in the bottom, both sides of horizontal silicon core 1, the spliced eye 2 bottom clampings that two spacing tangent planes 4 of horizontal silicon core 1 arrange with two perpendicular silicon core pipe 3 tops respectively, spacing tangent plane 4 width of described horizontal silicon core 1 all can more than or equal to width between two spliced eye 2 outsides of each perpendicular silicon core pipe 3.
3 or 4 structures that provide by reference to the accompanying drawings, the two ends of described horizontal silicon core 1 are connected to form " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes 3 respectively, the both sides, upper end of described two perpendicular silicon core pipes 3 are respectively equipped with " U " shape opening 6, the both sides of horizontal silicon core 1 are placed on " U " shape opening 6 of two perpendicular silicon core pipe 3 upper ends and form " ∏ " character form structure, the bottom of two perpendicular silicon core pipes 3 and graphite seat or tungsten seat or molybdenum seat are connected with the electrode of reduction furnace, just can form " ∏ " shape galvanic circle; Be respectively equipped with the spacing tangent plane 4 of spacing tangent plane 4, two in the bottom, both sides of horizontal silicon core 1 and form " ∏ " character form structure with the bottom clamping of " U " shape opening 6 of described two perpendicular silicon core pipe 3 upper ends respectively; Or being respectively equipped with cutting limit face 5 on the front-back of the both sides of horizontal silicon core 1, described cutting limit face 5 is connected on " U " shape opening 6 walls of two perpendicular silicon core pipe 3 upper ends and forms " ∏ " character form structure.
the bridging method of described hollow silicon core and solid silicon core, the two ends of described horizontal silicon core 1 are connected to form respectively another replacing structure of " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes 3, be respectively equipped with spacing tangent plane 4 in the bottom, both sides of horizontal silicon core 1, two perpendicular silicon core pipe 3 upper ends be respectively equipped with " U " shape opening 6 on the opposite, two spacing tangent planes 4 of described horizontal silicon core 1 are connected to respectively " U " shape opening 6 bottoms formation " ∏ " character form structures of two perpendicular silicon core pipes 3, the bottom of two perpendicular silicon core pipes 3 and graphite seat or tungsten seat or molybdenum seat are connected with the electrode of reduction furnace, just can form " ∏ " shape galvanic circle, be respectively equipped with circular arc termination 7 at the two ends of horizontal silicon core 1, join with " U " shape opening 6 relative inner faces kisses of perpendicular silicon core pipe 3 described circular arc termination 7, or another replacing structure of described circular arc termination 7, circular arc termination 7 is set to hemispherical ends.
5～8 structures that provide by reference to the accompanying drawings, the lower ends of two perpendicular silicon core pipes 3 are set to respectively plane or outside and lead circle 8 or inside and lead the plane of circle 9, described two perpendicular silicon core pipe 3 lower ends or outsidely lead circle 8 or innerly lead graphite seat in circle 9 and body of heater or the positive and negative electrode of tungsten seat or molybdenum seat is connected to form a closed-loop path; Be provided with at least one graphite seat in grafting stator 10, the two grafting stators 10 of downward-extension and the body of heater or the positive and negative electrode of tungsten seat or molybdenum seat on the plane that arranges respectively in two perpendicular silicon core pipe 3 lower ends and be connected to form a closed-loop path.
The bridging method of hollow silicon core of the present invention and solid silicon core, overlapping mode by a horizontal silicon core 1 and two perpendicular silicon core pipes 3, so that realization " ∏ " shape galvanic circle can be realized improving the contact area of horizontal silicon core 1 and two perpendicular silicon core pipes 3 and reduce resistance;
Need to prove, the present invention has the solid overlapping mode of horizontal silicon core and perpendicular silicon core now by change, utilize solid horizontal silicon core 1 and two perpendicular silicon core pipes 5 to overlap, make the closed-loop path of horizontal silicon core 1 and two perpendicular silicon core pipes 5 be guaranteed, the shut-down of also having avoided existing technique easily to utilize high frequency coil to draw the injuring high frequency coil of appearance and having caused, the present invention not only can guarantee the rising of yield rate in using in the later stage, and due to two perpendicular silicon core pipe 5 enlarged diameter, the speed of growth also is greatly improved; Conductance during the present invention guarantees to use and possess electric conductivity preferably, and then can improve the quality of polysilicon in production of polysilicon.
The present invention is prior art for the detailed description part or does not belong to protection scope of the present invention, so the present invention describes in detail.
The embodiment that selects in this article in order to disclose purpose of the present invention currently thinks suitablely, still, will be appreciated that, the present invention is intended to comprise that all belong to all changes and the improvement of the embodiment in this design and invention scope.
Claims (11)
1. the bridging method of a hollow silicon core and solid silicon core, comprise horizontal silicon core (1) and perpendicular silicon core pipe (3), it is characterized in that: the two ends of described horizontal silicon core (1) are connected to form " ∏ " character form structure by the upper end of clamping or grafting and two perpendicular silicon core pipes (3) respectively.
2. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: the two ends of described horizontal silicon core (1) are connected to form " ∏ " character form structure by the upper end of grafting and two perpendicular silicon core pipes (3) respectively, being respectively equipped with the spliced eye (2) of mutual perforation in the both sides, top of two perpendicular silicon core pipes (3), pegs graft with the spliced eye (2) of two perpendicular silicon core pipe (3) top settings respectively and forms " ∏ " character form structure in the both sides of described horizontal silicon core (1).
3. the bridging method of hollow silicon core according to claim 2 and solid silicon core, it is characterized in that: be respectively equipped with spacing tangent plane (4) in the bottom, both sides of horizontal silicon core (1), spliced eye (2) the bottom clamping that two spacing tangent planes (4) of horizontal silicon core (1) arrange with two perpendicular silicon core pipe (3) tops respectively.
4. the bridging method of hollow silicon core according to claim 3 and solid silicon core is characterized in that: the spacing tangent plane of described horizontal silicon core (1) (4) width is more than or equal to width between two spliced eyes (2) outside of each perpendicular silicon core pipe (3).
5. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: the two ends of described horizontal silicon core (1) are connected to form " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes (3) respectively, the both sides, upper end of described two perpendicular silicon core pipes (3) are respectively equipped with " U " shape opening (6), and the both sides of horizontal silicon core (1) are placed on upper " ∏ " character form structure that forms of " U " shape opening (6) of two perpendicular silicon core pipes (3) upper end.
6. the bridging method of hollow silicon core according to claim 5 and solid silicon core, it is characterized in that: be respectively equipped with spacing tangent plane (4) in the bottom, both sides of horizontal silicon core (1), two spacing tangent planes (4) form " ∏ " character form structure with the bottom clamping of " U " shape opening (6) of described two perpendicular silicon core pipes (3) upper ends respectively.
7. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: be respectively equipped with cutting limit face (5) on the both sides front-back of horizontal silicon core (1), described cutting limit face (5) is connected to and forms " ∏ " character form structure on " U " shape opening (6) wall of two perpendicular silicon core pipes (3) upper end.
8. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: the two ends of described horizontal silicon core (1) are connected to form respectively another replacing structure of " ∏ " character form structure by the upper end of clamping and two perpendicular silicon core pipes (3), be respectively equipped with spacing tangent plane (4) in the bottom, both sides of horizontal silicon core (1), two perpendicular silicon core pipes (3) upper end be respectively equipped with " U " shape opening (6) on the opposite, two spacing tangent planes (4) of described horizontal silicon core (1) are connected to respectively " U " shape opening (6) bottom formation " ∏ " character form structure of two perpendicular silicon core pipes (3).
9. the bridging method of hollow silicon core according to claim 8 and solid silicon core, it is characterized in that: be respectively equipped with circular arc termination (7) at the two ends of horizontal silicon core (1), join with " U " shape opening (6) relative inner face kiss of perpendicular silicon core pipe (3) described circular arc termination (7); Or another replacing structure of described circular arc termination (7), circular arc termination (7) is set to hemispherical ends.
10. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: the lower ends of two perpendicular silicon core pipes (3) are set to respectively the plane or circle (8) is led in the outside or circle (9) is led in inside, and the plane of described two perpendicular silicon core pipe (3) lower ends or outside lead that graphite seat in circle (9) and body of heater is led in circle (8) or inside or the positive and negative electrode of tungsten seat or molybdenum seat is connected to form a closed-loop path.
11. the bridging method of hollow silicon core according to claim 1 and solid silicon core, it is characterized in that: be provided with at least one to the grafting stator (10) of downward-extension on the plane that arranges respectively in two perpendicular silicon core pipe (3) lower ends, the graphite seat in two grafting stators (10) and body of heater or the positive and negative electrode of tungsten seat or molybdenum seat are connected to form a closed-loop path.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114455588A (en) * | 2022-02-25 | 2022-05-10 | 洛阳市自动化研究所有限公司 | Method for growing polycrystalline silicon rods by combining multiple silicon core assemblies |
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| US3820935A (en) * | 1971-10-04 | 1974-06-28 | Siemens Ag | Method and device for the production of tubular members of silicon |
| US20070251455A1 (en) * | 2006-04-28 | 2007-11-01 | Gt Equipment Technologies, Inc. | Increased polysilicon deposition in a CVD reactor |
| CN101570890A (en) * | 2009-01-06 | 2009-11-04 | 刘朝轩 | Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance |
| CN101698480A (en) * | 2009-10-28 | 2010-04-28 | 宜昌南玻硅材料有限公司 | Method for producing polysilicon by adopting square silicon chip and device thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US3746496A (en) * | 1970-10-12 | 1973-07-17 | Siemens Ag | Device for producing tubular bodies of semiconductor material, preferably silicon or germanium |
| US3820935A (en) * | 1971-10-04 | 1974-06-28 | Siemens Ag | Method and device for the production of tubular members of silicon |
| US20070251455A1 (en) * | 2006-04-28 | 2007-11-01 | Gt Equipment Technologies, Inc. | Increased polysilicon deposition in a CVD reactor |
| CN101570890A (en) * | 2009-01-06 | 2009-11-04 | 刘朝轩 | Method for lapping orifice silicon core capable of effectively improving contact area and reducing resistance |
| CN101698480A (en) * | 2009-10-28 | 2010-04-28 | 宜昌南玻硅材料有限公司 | Method for producing polysilicon by adopting square silicon chip and device thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114455588A (en) * | 2022-02-25 | 2022-05-10 | 洛阳市自动化研究所有限公司 | Method for growing polycrystalline silicon rods by combining multiple silicon core assemblies |
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Denomination of invention: Lap joint method between hollow silicon core and solid silicon core Effective date of registration: 20170915 Granted publication date: 20160302 Pledgee: Luoyang Hua Ze small loan Co., Ltd. Pledgor: Luoyang Jinnuo Mechanical Engineering Co., Ltd. Registration number: 2017410000026 |