CN103151938A - Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes - Google Patents
Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes Download PDFInfo
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- CN103151938A CN103151938A CN2012100018311A CN201210001831A CN103151938A CN 103151938 A CN103151938 A CN 103151938A CN 2012100018311 A CN2012100018311 A CN 2012100018311A CN 201210001831 A CN201210001831 A CN 201210001831A CN 103151938 A CN103151938 A CN 103151938A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention provides a converter unit which comprises an insulated gate bipolar translator (IGBT) module and a capacitor. The IGBT module comprises an inversely parallel cascade structural module based on welding type IGBTs and pressure welding type diodes. The inversely parallel cascade structural module based on the welding type IGBTs and the pressure welding type diodes comprises the welding type IGBTs and the corresponding pressure welding type diodes which are in series connection. An emitter of one IGBT and a collector of next IGBT are connected through a wire with low sensitivity. Each pressure welding type diode is connected between the collector and the emitter of the corresponding welding type IGBT in an inversely parallel mode. The IGBT module is in parallel connection with the capacitor. Due to the fact that the converter unit comprises the inversely parallel cascade structural module based on the welding type IGBTs and the pressure welding type diodes, in a converter provided with the multiple converter units in a series mode, the faulted converter unit can be switched to be in a short circuit failure mode, and safe working of a whole IGBT valve is guaranteed.
Description
Technical field
The present invention relates to the power electronics semiconductor device application, specifically relate to a kind of convertor unit based on solder type IGBT and crimp type diode inverse parallel cascaded structure.
Background technology
insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) be a kind of semiconductor power switching device of 20th century the mid-80 appearance, its input control is partly mos field effect transistor (MOSFET, Metal-Oxide-Semiconductor Field Effect Transistor), output stage is bipolar junction transistor, have the advantage of MOSFET and power transistor concurrently: high input impedance, voltage control, driving power is little, switching speed is fast, operating frequency can reach 10～40kHz, saturation pressure reduces, the electric current and voltage capacity is larger, the safety operation area is wide, but the voltage of single IGBT, the electric current permissible value is difficult to improve again, in order to be applied to high voltage, powerful field, can adopt the method for modular multilevel and H bridge cascade connection multi-level.
modular multilevel technology and H bridge cascade connection multi-level technology are a kind of multilevel converter technology, every phase brachium pontis adopts a plurality of electric, the subelement that 26S Proteasome Structure and Function is identical is in series, and the DC side Support Capacitor is disperseed to be integrated in single subelement, each subelement comprises a DC power supply (being generally dc energy storage electric capacity), the different switch combinations of single subelement master power switch pipe possess the function that is similar to single-pole double-throw switch (SPDT), different switch combinations and DC power supply cooperatively interact, thereby formed " controllable voltage source " with two kinds of level outputs, H bridge concatenation technology discrimination block multilevel converter is that H bridge concatenation technology does not have dc bus.
the sub-convertor unit of traditional modular multilevel converter and H bridge cascade connection multi-level technology is subject to the restriction of IGBT device rated voltage, be difficult to further improve voltage, need to connect to improve by introducing IGBT voltage and the capacity of submodule, can produce simultaneously the situation of Voltage unbalance between each convertor unit, and high voltage, powerful application has determined in case serious Voltage unbalance occurs, IGBT will inevitably occur losing efficacy and even explode, and IGBT occur opening circuit realize or blast after, can damage these high power electronic equipments again, cause serious loss.
At present the packing forms of semiconductor device mainly contains two kinds of solder type and dull and stereotyped crimp types, it is little, easy for installation that solder type has a volume, advantages of simple structure and simple, but device can only dispel the heat by single face, require the floor good heat conductivity again that should insulate, its failure mode is the form that opens circuit, and dull and stereotyped crimp type structure is that device and double surface radiators are tightened together, radiator had not only been done heat radiation but also had been made electrode, perfect heat-dissipating, device is safe and reliable, and failure mode is the short circuit form.
Summary of the invention
in view of the foregoing defects the prior art has, the purpose of this invention is to provide a kind of convertor unit based on solder type IGBT and crimp type diode inverse parallel structure, when open circuit fault appears in solder type IGBT, the IGBT of fault is the short-circuit failure form, do not affect the work of whole IGBT cascaded structure, in addition, the anti-paralleled diode withstand voltage is slightly lower than the IGBT withstand voltage, when solder type IGBT voltage occurs and exceeds the unusual service condition of normal working voltage, crimp type diode meeting over-voltage breakdown, form short-circuit failure, protect this IGBT to be unlikely to damage, adopt this structure can save the essential protection thyristor of traditional convertor unit.A kind of convertor unit provided by the invention comprises: IGBT module and electric capacity, described IGBT module comprise based on solder type IGBT and crimp type diode inverse parallel cascaded structure module;
Described solder type IGBT series connection and the corresponding crimp type diode thereof of connecting that comprise based on solder type IGBT and crimp type diode inverse parallel cascaded structure module, the emitter of an IGBT is connected by low sense wire with the collector electrode of next IGBT, and the inverse parallel of crimp type diode is between the collector and emitter of its corresponding solder type IGBT;
Described IGBT module and described Capacitance parallel connection.
In the first optimal technical scheme provided by the invention: described IGBT module comprises half-bridge structure, and described half-bridge structure comprises a brachium pontis, and brachium pontis comprises that two of up and down are described based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
In the second optimal technical scheme provided by the invention: described IGBT module comprises the H bridge construction, and described H bridge construction comprises two symmetrical brachium pontis, and each brachium pontis comprises that two of up and down are described based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
In the 3rd optimal technical scheme provided by the invention: described crimp type diode encapsulates in radiator by the packing forms of dull and stereotyped crimping, and the collector electrode of described solder type IGBT and emitter are fixed on described radiator two ends.
In the 4th optimal technical scheme provided by the invention: described crimp type diode is by the powerful crimping of 20KN-80KN and radiator pressing.
In the 5th optimal technical scheme provided by the invention: described crimp type diode is the crimp type silicon carbide diode.
In the 6th optimal technical scheme provided by the invention: the withstand voltage of described crimp type diode is lower than the IGBT withstand voltage.
In the 7th optimal technical scheme provided by the invention: a kind of modular multilevel structure voltage source converter is provided, one end connects the DC network side (1) of high voltage direct current transmission, the other end connects three-phase ac network side (2), described modular multilevel structure voltage source converter comprises the three-phase branch road, and every phase branch road comprises the convertor unit of the half-bridge structure IGBT module of series connection.
In the 8th optimal technical scheme provided by the invention: a kind of H bridge cascaded multilevel structure voltage source converter is provided, one end connects the three-phase neutral point, the other end connects the three-phase ac network side, described modular multilevel structure voltage source converter comprises the three-phase branch road, and every phase branch road comprises the H bridge construction IGBT module of series connection and the convertor unit of Capacitance parallel connection.
Description of drawings
Fig. 1 is: a kind of structured flowchart based on solder type IGBT and crimp type diode inverse parallel cascaded structure module provided by the invention;
Fig. 2 is: a kind of modular multilevel convertor unit structured flowchart that the embodiment of the present invention provides;
Fig. 3 is: a kind of H bridge cascading multiple electrical level convertor unit structured flowchart that the embodiment of the present invention provides;
Fig. 4 is: a kind of modular multi-electrical-level voltage source current converter structured flowchart that the embodiment of the present invention provides;
Fig. 5 is: a kind of H bridge cascade connection type voltage source converter structured flowchart that the embodiment of the present invention provides.
In figure: 1, DC network side 2, three-phase ac network side.
Embodiment
a kind of structured flowchart based on solder type IGBT and crimp type diode inverse parallel cascaded structure module provided by the invention as shown in Figure 1, as seen from Figure 1, this cascaded structure module comprises radiator, crimp type diode and solder type IGBT, a plurality of solder type IGBT series connection, the crimp type diode is crimped between two adjacent solder type IGBT, and the series connection between solder type IGBT is that the emitter of an IGBT is connected by low sense wire with the collector electrode of next IGBT, the crimp type diode is connected to IGBT by the heat sink format of dull and stereotyped crimping, the flat crimping type structure is mainly that device and double surface radiators are tightened together, radiator had not only been done heat radiation but also had been made electrode, the mode inverse parallel of crimp type diode by dull and stereotyped crimping is between the collector electrode C and emitter E of its corresponding solder type IGBT, play afterflow and protective effect.
Protect preferably effect in order to reach, the rated insulation voltage of crimp type diode can be slightly lower than solder type IGBT rated insulation voltage value.
Further, this crimp type diode is crimp type SiC (carborundum) diode.
A kind of convertor unit provided by the invention comprises IGBT module and electric capacity in parallel, and the IGBT module comprises above-mentioned based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
Embodiment one:
Embodiment one provided by the invention is a kind of modular multilevel convertor unit, the concrete structure schematic diagram as shown in Figure 2, as seen from Figure 2, a kind of modular multilevel convertor unit that the present embodiment provides comprises IGBT module and electric capacity in parallel, the IGBT modular structure that the present embodiment provides is semi-bridge type, comprise a brachium pontis, this brachium pontis comprise the up and down two based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
A kind of modular multilevel convertor unit that the present embodiment provides is by two groups of separate forming with crimp type diode inverse parallel cascaded structure module and an electric capacity based on solder type IGBT, after an IGBT in convertor unit damages, the capacitance voltage of this convertor unit will constantly raise, and then cause the antiparallel flat crimping type diode breakdown of IGBT, and enter short circuit failure mode, make fault IGBT level short circuit in this convertor unit, this convertor unit continues normal operation.When if in convertor unit, an IGBT operating voltage occurs and exceeds the unusual service condition of normal working voltage; slightly lower than the IGBT withstand voltage, crimp type diode meeting over-voltage breakdown forms short-circuit failure due to the anti-paralleled diode withstand voltage; protect this IGBT to be unlikely to damage, this convertor unit works on.
Embodiment two:
Embodiment two provided by the invention is a kind of H bridge cascading multiple electrical level convertor unit, concrete structure as shown in Figure 3, as seen from Figure 3, a kind of H bridge cascading multiple electrical level convertor unit that the present embodiment provides comprises IGBT module and electric capacity in parallel, the IGBT modular structure that the present embodiment provides is the H bridge type, comprise two brachium pontis, each brachium pontis comprise the up and down two based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
A kind of H bridge cascading multiple electrical level convertor unit that the present embodiment provides is comprised of four groups of separate IGBT, diode and an electric capacity, after an IGBT in convertor unit damages, the capacitance voltage of this convertor unit will constantly raise, and then cause the antiparallel flat crimping type diode breakdown of this fault IGBT, and enter short circuit failure mode, make this convertor unit continue normal operation.When if in convertor unit, an IGBT operating voltage occurs and exceeds the unusual service condition of normal working voltage; slightly lower than the IGBT withstand voltage, crimp type diode meeting over-voltage breakdown forms short-circuit failure due to the anti-paralleled diode withstand voltage; protect this IGBT to be unlikely to damage, this convertor unit works on.
Embodiment three:
embodiment three provided by the invention is a kind of modular multi-electrical-level voltage source current converter (Modular Multilevel Converter, MMC), concrete structure as shown in Figure 4, as shown in Figure 4, a kind of MMC one end that the present embodiment provides connects the DC network side 1 of high voltage direct current transmission, the other end connects three-phase ac network side 2, this MMC comprises the three-phase branch road, every phase branch road all has a plurality of submodule convertor units 3 to be in series, each submodule convertor unit 3 is identical, form by switching device and electric capacity, usually switching device is IGBT, and, IGBT also has anti-paralleled diode as the afterflow diode, switching device is opened or is turn-offed, play the effect that drops into and excise capacitance voltage, by input and excision number and the order of controlling a plurality of submodule convertor units, obtain the interchange output waveform of an appointment in three-phase ac network side 2.
The convertor unit that the present embodiment provides is a kind of modular multilevel convertor unit in embodiment one provided by the invention, after an IGBT damage in a convertor unit is arranged in the three-phase branch road, the capacitance voltage of this convertor unit will constantly raise, and then cause the antiparallel flat crimping type diode breakdown of this fault IGBT, and enter short circuit failure mode, make this convertor unit continue normal operation, can not cause the damage of whole converter.When if in convertor unit, an IGBT operating voltage occurs and exceeds the unusual service condition of normal working voltage; slightly lower than the IGBT withstand voltage, crimp type diode meeting over-voltage breakdown forms short-circuit failure due to the anti-paralleled diode withstand voltage; protect this IGBT to be unlikely to damage, this convertor unit works on.
Embodiment four:
embodiment four provided by the invention is a kind of H bridge cascade connection type voltage source converter, concrete structure as shown in Figure 5, as shown in Figure 5, a kind of H bridge cascade connection type voltage source converter that the present embodiment provides, one end connects three-phase neutral point N, the other end connects three-phase ac network A, B, C, H bridge cascade connection type voltage source converter comprises the three-phase branch road, every phase branch road all has a plurality of submodule convertor units to be in series, each submodule convertor unit is identical, form by switching device and electric capacity, usually switching device is IGBT, and, IGBT also has anti-paralleled diode as the afterflow diode, switching device is opened or is turn-offed, play the effect that drops into and excise capacitance voltage, by input and excision number and the order of controlling a plurality of submodule convertor units, obtain the interchange output waveform of an appointment in the three-phase ac network side.
The convertor unit that the present embodiment provides is a kind of H bridge cascading multiple electrical level convertor unit in embodiment two provided by the invention, after an IGBT damage in a convertor unit is arranged in the three-phase branch road, the capacitance voltage of this convertor unit will constantly raise, and then cause the antiparallel flat crimping type diode breakdown of this fault IGBT, and enter short circuit failure mode, make this convertor unit continue normal operation, can not cause the damage of whole converter.When if in convertor unit, an IGBT operating voltage occurs and exceeds the unusual service condition of normal working voltage; slightly lower than the IGBT withstand voltage, crimp type diode meeting over-voltage breakdown forms short-circuit failure due to the anti-paralleled diode withstand voltage; protect this IGBT to be unlikely to damage, this convertor unit works on.
Above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit, although with reference to above-described embodiment, the present invention is had been described in detail, the those of ordinary skill in described field is to be understood that: still can modify or replace on an equal basis the specific embodiment of the present invention, and do not break away from any modification of spirit and scope of the invention or be equal to replacement, it all should be encompassed in the middle of claim scope of the present invention.
Claims (9)
1. convertor unit, comprising: IGBT module and electric capacity is characterized in that: described IGBT module comprises based on solder type IGBT and crimp type diode inverse parallel cascaded structure module;
Described solder type IGBT series connection and the corresponding crimp type diode thereof of connecting that comprise based on solder type IGBT and crimp type diode inverse parallel cascaded structure module, the emitter of an IGBT is connected by low sense wire with the collector electrode of next IGBT, and the inverse parallel of crimp type diode is between the collector and emitter of its corresponding solder type IGBT;
Described IGBT module and described Capacitance parallel connection.
2. a kind of convertor unit according to claim 1, it is characterized in that: described IGBT module comprises half-bridge structure, described half-bridge structure comprises a brachium pontis, and brachium pontis comprises that two of up and down are described based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
3. a kind of convertor unit according to claim 1, it is characterized in that: described IGBT module comprises the H bridge construction, described H bridge construction comprises two symmetrical brachium pontis, and each brachium pontis comprises that two of up and down are described based on solder type IGBT and crimp type diode inverse parallel cascaded structure module.
4. convertor unit according to claim 1, it is characterized in that: described crimp type diode encapsulates in radiator by the packing forms of dull and stereotyped crimping, and the collector electrode of described solder type IGBT and emitter are fixed on described radiator two ends.
5. convertor unit according to claim 4 is characterized in that: described crimp type diode is by powerful crimping and the radiator pressing of 20KN-80KN.
6. convertor unit according to claim 1, it is characterized in that: described crimp type diode is the crimp type silicon carbide diode.
7. convertor unit according to claim 1, it is characterized in that: the withstand voltage of described crimp type diode is lower than the IGBT withstand voltage.
8. modular multilevel structure voltage source converter, one end connects the DC network side (1) of high voltage direct current transmission, the other end connects three-phase ac network side (2), it is characterized in that: described modular multilevel structure voltage source converter comprises the three-phase branch road, and every phase branch road comprises the convertor unit as claimed in claim 2 of series connection.
9. H bridge cascaded multilevel structure voltage source converter, one end connects the three-phase neutral point, the other end connects the three-phase ac network side, it is characterized in that: described modular multilevel structure voltage source converter comprises the three-phase branch road, and every phase branch road comprises the convertor unit as claimed in claim 3 of series connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100018311A CN103151938A (en) | 2012-01-05 | 2012-01-05 | Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100018311A CN103151938A (en) | 2012-01-05 | 2012-01-05 | Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes |
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| CN103151938A true CN103151938A (en) | 2013-06-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100018311A Pending CN103151938A (en) | 2012-01-05 | 2012-01-05 | Converter unit provided with inversely parallel cascade structure and based on welding type insulated gate bipolar translators (IGBT)s and pressure welding type diodes |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103986342A (en) * | 2014-05-29 | 2014-08-13 | 国家电网公司 | Power electronic current converter and control method capable of eliminating two-way fault current |
| US9537421B2 (en) | 2014-08-22 | 2017-01-03 | General Electric Company | Multilevel converter |
| CN106295013A (en) * | 2016-08-12 | 2017-01-04 | 全球能源互联网研究院 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN109545779A (en) * | 2018-10-30 | 2019-03-29 | 西安西电电力***有限公司 | Diode crimp assemblies unit, full-bridge concatenation unit and module |
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| CN101819970A (en) * | 2010-04-08 | 2010-09-01 | 中国电力科学研究院 | Welded IGBT and solderless diode-based series structure module |
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2012
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| US5731970A (en) * | 1989-12-22 | 1998-03-24 | Hitachi, Ltd. | Power conversion device and semiconductor module suitable for use in the device |
| CN101795057A (en) * | 2010-04-07 | 2010-08-04 | 浙江大学 | Method for starting three-phase modular multilevel inverter without auxiliary DC power supply |
| CN101819970A (en) * | 2010-04-08 | 2010-09-01 | 中国电力科学研究院 | Welded IGBT and solderless diode-based series structure module |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103986342A (en) * | 2014-05-29 | 2014-08-13 | 国家电网公司 | Power electronic current converter and control method capable of eliminating two-way fault current |
| CN103986342B (en) * | 2014-05-29 | 2016-08-24 | 国家电网公司 | A kind of power electronics inverter that can remove bi-directional failure electric current and control method |
| US9537421B2 (en) | 2014-08-22 | 2017-01-03 | General Electric Company | Multilevel converter |
| CN106295013A (en) * | 2016-08-12 | 2017-01-04 | 全球能源互联网研究院 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN106295013B (en) * | 2016-08-12 | 2019-09-27 | 全球能源互联网研究院有限公司 | A kind of modeling method of high-voltage semi-conductor device short term failure model |
| CN109545779A (en) * | 2018-10-30 | 2019-03-29 | 西安西电电力***有限公司 | Diode crimp assemblies unit, full-bridge concatenation unit and module |
| CN109545779B (en) * | 2018-10-30 | 2020-07-24 | 西安西电电力***有限公司 | Diode crimping component unit, full-bridge cascade unit and module |
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