CN103151440A - Photonic crystal LED (Light Emitting Diode) structure with gradually-varied refractive index - Google Patents
Photonic crystal LED (Light Emitting Diode) structure with gradually-varied refractive index Download PDFInfo
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- CN103151440A CN103151440A CN2013100959930A CN201310095993A CN103151440A CN 103151440 A CN103151440 A CN 103151440A CN 2013100959930 A CN2013100959930 A CN 2013100959930A CN 201310095993 A CN201310095993 A CN 201310095993A CN 103151440 A CN103151440 A CN 103151440A
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Abstract
The invention provides a photonic crystal LED (Light Emitting Diode) structure with a gradually-varied refractive index. The photonic crystal LED structure comprises a substrate, a nucleating layer, a buffering layer, an n-type contact layer, an active luminescent layer, a p-type electron blocking layer, a p-type contact layer, a refractive index gradual variation array type photonic crystal, a negative electrode and a positive electrode, wherein the nucleating layer is manufactured on the substrate; the buffering layer is manufactured on the nucleating layer; the n-type contact layer is manufactured on the buffering layer and a mesa is formed at one side of the n-type contact layer; the active luminescent layer is manufactured on the other side of the mesa of the n-type contact layer; the p-type electron blocking layer is manufactured on the active luminescent layer; the p-type contact layer is manufactured on the p-type electron blocking layer; the refractive index gradual variation array type photonic crystal is manufactured on the p-type contact layer; the negative electrode is manufactured on the mesa at one side of the n-type contact layer; and the positive electrode is manufactured on the refractive index gradual variation array type photonic crystal.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of photonic crystal light-emitting diode structure of gradually changed refractive index.
Background technology
At present III-V family photoelectric semiconductor material is described as third generation semi-conducting material.And GaN series LED owing to can produce the light-emitting diode (referred to as " LED ") of various coloured light (blue light or the purple light that especially need high energy gap) by the composition of controlling material, and becomes the emphasis of industry research.
Affect the luminous factor of LED except internal quantum efficiency, light extraction efficiency also affects the luminous efficiency of LED to a great extent.The gallium nitride based LED light extraction efficiency mainly is subjected to the impact of gallium nitride material refractive index.Take 460 nanometer output light as example, the effective refractive index value of the light of 460 nano wave lengths in gallium nitride material is 2.38, the refractive index of air is 1, the wide part that produces in LED is confined in high-index semiconductor inner, exist with guided wave mode, and only have the luminous energy of a small amount of (4%) to shine in air with radiation mode.At present, the method that improves the LED light extraction efficiency has a lot, as surface coarsening, and surface phasmon, omni-directional reflector, photonic crystal etc.Theoretical research shows, photonic crystal can improve the light extraction efficiency of LED to a great extent because of its forbidden photon band effect and optical grating diffraction effect.Present photonic crystal mostly is produced on material surface with single structure, and photon band gap and optical grating diffraction effect must be followed the loss of energy at the interface.Adopt the photon crystal structure of gradually changed refractive index, because the variation of its duty ratio causes that the effective refractive index of photonic crystal itself changes, thereby make the leaded light effect of photonic crystal more remarkable, can further reduce the light loss that is caused by the single structure photonic crystal, more effectively improve the LED light extraction efficiency.
Summary of the invention
The object of the invention is to, a kind of photonic crystal light-emitting diode structure of gradually changed refractive index is provided, it can make the leaded light effect of photonic crystal more remarkable, can further reduce the light loss that is caused by the single structure photonic crystal, more effectively improves the LED light extraction efficiency.
The invention provides a kind of photonic crystal light-emitting diode structure of gradually changed refractive index, it comprises:
One substrate;
One nucleating layer, this nucleating layer be produced on substrate above;
One resilient coating, this resilient coating be produced on nucleating layer above;
One N-shaped contact layer, this N-shaped contact layer be produced on resilient coating above, a side of this N-shaped contact layer is formed with a table top;
One active luminescent layer, this activity luminescent layer be produced on N-shaped contact layer table top opposite side above;
One p-type electronic barrier layer, this p-type electronic barrier layer be produced on active luminescent layer above;
One p-type contact layer, this p-type contact layer be produced on the p-type electronic barrier layer above;
One gradually changed refractive index array photon crystal, this gradually changed refractive index array photon crystal is produced on the p-type contact layer;
One negative electrode, this negative electrode be produced on N-shaped contact layer one side table top above;
One positive electrode, this positive electrode be produced on gradually changed refractive index array photon crystal above.
The invention has the beneficial effects as follows: it can make the leaded light effect of photonic crystal more remarkable, can further reduce the light loss that is caused by the single structure photonic crystal, more effectively improves the LED light extraction efficiency.
Description of drawings
Fig. 1 is the photonic crystal light-emitting diode structural representation of gradually changed refractive index of the present invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
See also shown in Figure 1ly, the invention provides a kind of photonic crystal light-emitting diode structure of gradually changed refractive index, it comprises:
One substrate 11, the material of described substrate 11 are that alumina single crystal, 6H-SiC or the 4H-SiC of C face, R-face or A-face and lattice constant are close to the monocrystalline oxide of nitride-based semiconductor.
One nucleating layer 12, this nucleating layer 12 be produced on substrate 11 above; This nucleating layer 12 consists of for gallium nitride material.
One resilient coating 13, this resilient coating 13 be produced on nucleating layer 12 above; This resilient coating 13 consists of for gallium nitride material.
One N-shaped contact layer 14, this N-shaped contact layer 14 be produced on resilient coating 13 above, a side of this N-shaped contact layer 14 is formed with a table top 141, this table top 141 forms via the method for plasma etching; This N-shaped contact layer 14 is made of the N-shaped gallium nitride.
One active luminescent layer 15, this activity luminescent layer 15 be produced on N-shaped contact layer 14 table top 141 opposite sides above; Described active luminescent layer 15 is to be made of the multiply periodic quantum well structure that indium gallium nitrogen thin layer and gallium nitride thin layer interaction cascading form.
One p-type electronic barrier layer 16, this p-type electronic barrier layer 16 be produced on active luminescent layer 15 above; This p-type electronic barrier layer 16 is made of Al-Ga-N material.
One p-type contact layer 17, this p-type contact layer 17 be produced on p-type electronic barrier layer 16 above; This p-type contact layer 17 is made of the p-type gallium nitride material.
One gradually changed refractive index array photon crystal 18, this gradually changed refractive index array photon crystal 18 is produced on p-type contact layer 17;
Described gradually changed refractive index array photon crystal 18 is to make by the mode of electron beam exposure, laser hologram exposure interference, nano impression or polystyrene spheres, form pre-etching array figure on p-type contact layer 17, graphical distribution can be the distribution of triangle, square or hexagon or other shape;
Described gradually changed refractive index array photon crystal 18 is the method acquisitions by the inductively coupled plasma etching; Mode by electron beam exposure, laser hologram exposure interference, nano impression or polystyrene spheres is produced on the pre-etching array figure that forms on p-type contact layer 17 adopts the inductively coupled plasma etching, can obtain poroid gradually changed refractive index array photon crystal 18;
The lattice constant of described gradually changed refractive index array photon crystal 18 is 10010000 nanometers; The hole depth of gradually changed refractive index array photon crystal 18 is 502000 nanometers; Arranging of the hole array of gradually changed refractive index array photon crystal 18 is the graphical distribution of triangle, square or hexagon or other shape;
Described gradually changed refractive index array photon crystal 18, the variation of its refractive index is recently to realize by the duty that adjustment gradually changed refractive index array photon crystal 18 longitudinally distributes, the duty ratio of gradually changed refractive index array photon crystal 18 increases from bottom to top successively along the direction from substrate 11 to p-type contact layer 17, the variation of duty ratio can realize by the performance number of regulating in the inductively coupled plasma etching process, and duty ratio is directly proportional to the performance number of inductively coupled plasma etching;
Described gradually changed refractive index array photon crystal 18, its different duty that longitudinally distributes can be continuous gradation, can be also the step sudden change, concrete etching process can realize by regulating the continuous variation of inductively coupled plasma etching power or discrete variation.
One negative electrode 19, this negative electrode 19 are produced on the table top 141 of N-shaped contact layer 14 1 sides; This negative electrode 19 is comprised of chromium platinum or titanium aluminium titanium.
One positive electrode 20, this positive electrode 20 are produced on gradually changed refractive index array photon crystal 18; This positive electrode 20 is comprised of chromium platinum or titanium aluminium titanium, partial coverage gradually changed refractive index array photon crystal 18.
The photonic crystal light-emitting diode structure of described gradually changed refractive index adopts high-purity N H3 to do the N source, high-purity H in preparation
2And N
2Mist do carrier gas; Trimethyl gallium or triethyl-gallium are done the Ga source, and trimethyl indium is done the In source, and trimethyl aluminium is done the Al source; The N-shaped dopant is silane, and the p-type dopant is two luxuriant magnesium.
The photonic crystal light-emitting diode structure of described gradually changed refractive index can be formal dress, upside-down mounting or vertical stratification; Gradually changed refractive index array photon crystal 18 all is produced on light-emitting diode and goes out photosphere; In positive assembling structure, gradually changed refractive index array photon crystal 18 is produced on the p-type contact layer; In inverted structure, gradually changed refractive index array photon crystal 18 is produced on the substrate of top layer; In vertical stratification, gradually changed refractive index array photon crystal 18 is produced on the N-shaped contact layer.
The photonic crystal light-emitting diode structure of described gradually changed refractive index can be made other layer as required between N-shaped contact layer and p-type contact layer, to improve the performance of light-emitting diode, this belongs to known in the art, is not described further at this.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. the photonic crystal light-emitting diode structure of a gradually changed refractive index, it comprises:
One substrate;
One nucleating layer, this nucleating layer be produced on substrate above;
One resilient coating, this resilient coating be produced on nucleating layer above;
One N-shaped contact layer, this N-shaped contact layer be produced on resilient coating above, a side of this N-shaped contact layer is formed with a table top;
One active luminescent layer, this activity luminescent layer be produced on N-shaped contact layer table top opposite side above;
One p-type electronic barrier layer, this p-type electronic barrier layer be produced on active luminescent layer above;
One p-type contact layer, this p-type contact layer be produced on the p-type electronic barrier layer above;
One gradually changed refractive index array photon crystal, this gradually changed refractive index array photon crystal is produced on the p-type contact layer;
One negative electrode, this negative electrode be produced on N-shaped contact layer one side table top above;
One positive electrode, this positive electrode be produced on gradually changed refractive index array photon crystal above.
2. the photonic crystal light-emitting diode structure of gradually changed refractive index as claimed in claim 1, the material of wherein said substrate are that alumina single crystal, 6H-SiC or the 4H-SiC of C face, R-face or A-face and lattice constant are close to the monocrystalline oxide of nitride-based semiconductor.
3. the photonic crystal light-emitting diode structure of gradually changed refractive index as claimed in claim 1, the photonic crystal of wherein said gradually changed refractive index array is the array porous photonic crystal structure of gradually changed refractive index.
4. the photonic crystal light-emitting diode structure of gradually changed refractive index as claimed in claim 3, the photonic crystal of wherein said gradually changed refractive index array are to make by the mode of electron beam exposure, laser hologram exposure interference, nano impression or polystyrene spheres.
5. the photonic crystal light-emitting diode structure of gradually changed refractive index as claimed in claim 4, the photonic crystal of wherein said gradually changed refractive index array are that the method by the inductively coupled plasma etching obtains.
6. the photonic crystal light-emitting diode structure of gradually changed refractive index as claimed in claim 5, the lattice constant of the photonic crystal of wherein said gradually changed refractive index array is the 100-10000 nanometer; The hole depth of the photonic crystal of gradually changed refractive index array is the 50-2000 nanometer; Arranging of the photonic crystal holes array of gradually changed refractive index array is triangle, square or hexagon.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071840A (en) * | 2006-05-08 | 2007-11-14 | Lg电子株式会社 | Light emitting device and method for manufacturing the same |
| WO2012026704A2 (en) * | 2010-08-23 | 2012-03-01 | 고려대학교 산학협력단 | Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same |
| CN102931308A (en) * | 2012-11-19 | 2013-02-13 | 中国科学院半导体研究所 | Preparation method of light emitting diode with photonic crystals with gradually-changed radius |
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- 2013-03-25 CN CN2013100959930A patent/CN103151440A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101071840A (en) * | 2006-05-08 | 2007-11-14 | Lg电子株式会社 | Light emitting device and method for manufacturing the same |
| WO2012026704A2 (en) * | 2010-08-23 | 2012-03-01 | 고려대학교 산학협력단 | Semiconductor light-emitting device having a photonic crystal pattern formed thereon, and method for manufacturing same |
| CN102931308A (en) * | 2012-11-19 | 2013-02-13 | 中国科学院半导体研究所 | Preparation method of light emitting diode with photonic crystals with gradually-changed radius |
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Application publication date: 20130612 |