CN103149808A - Immersed ultraviolet optical system - Google Patents
Immersed ultraviolet optical system Download PDFInfo
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- CN103149808A CN103149808A CN2013100620086A CN201310062008A CN103149808A CN 103149808 A CN103149808 A CN 103149808A CN 2013100620086 A CN2013100620086 A CN 2013100620086A CN 201310062008 A CN201310062008 A CN 201310062008A CN 103149808 A CN103149808 A CN 103149808A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 43
- 238000007654 immersion Methods 0.000 claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 230000004075 alteration Effects 0.000 abstract description 15
- 238000001259 photo etching Methods 0.000 abstract description 9
- 238000003384 imaging method Methods 0.000 abstract description 3
- 241000219739 Lens Species 0.000 description 124
- 210000000695 crystalline len Anatomy 0.000 description 124
- 238000005516 engineering process Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000007 visual effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 201000009310 astigmatism Diseases 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000004304 visual acuity Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
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Abstract
The invention provides an immersed ultraviolet optical system which is used for imaging an image of an object plane into an image plane. The immersion type ultraviolet optical system comprises a first unit, a second unit, a third unit, a fourth unit and a fifth unit along the optical axis direction. The first unit group L1 has positive refractive power, the second unit group L2 has positive refractive power, the third unit group L3 has positive refractive power, the fourth unit group L4 has negative refractive power, and the fifth unit group L5 has negative refractive power. The immersion type ultraviolet optical system can better compensate aberration, improve imaging quality, improve system resolution and improve photoetching efficiency.
Description
Technical field
The present invention relates to a kind of immersion ultraviolet optics system for lithography process, semiconductor element producing device, belong to the projection optics technical field.
Background technology
Photoetching is a kind of ic manufacturing technology, the principle that it utilizes the optical projection image is transferred to optical exposure process gluing silicon chip in the mode of exposure with high graphics with the IC figure on mask plate, and the manufacturing of nearly all integrated circuit is all to adopt the optical projection lithography technology.At first, the semiconductor devices manufacturing, employing be the contact photolithography technology that mask and wafer sticks together.Nineteen fifty-seven, the contact photolithography technology has realized that characteristic dimension (Feature Size) is the manufacturing of the dynamic RAM (DRAM, Dynamic Random Access Memory) of 20 microns.Afterwards, semicon industry is introduced the proximity photoetching technique that has certain interval between mask and wafer, and respectively at producing the DRAM that characteristic dimension is 10 microns and 6 microns in 1971 and 1974.1978, U.S. GCA company researched and developed First distribution wafer stepper in the world, 2 microns of resolutions, and the distribution wafer stepper becomes rapidly the main flow in semiconductor fabrication.The alignment precision of distribution wafer stepper can reach ± 0.5 μ m, compares the alignment precision when steppers has greatly improved the resolution of system and mask/silicon chip alignment with litho machine before this.
Photoetching technique is one of important support type technology of China's chip industry development, the projection lithography device is the key equipment of large scale integrated circuit manufacturing process, the At High Resolution projection optical system is the core component of high most advanced and sophisticated litho machine, and its performance is directly determining the precision of litho machine.The projection optical system practical research of the present domestic wavelength 193nm that just started working, the design value aperture was also all not bery high in the past, and best result distinguishes that power is the 0.35-0.5 micron.Because resolution is low, can not produce the figure of high-accuracy high-resolution, can not satisfy the demand of large scale integrated circuit manufacturing and research.
The formula that can be obtained the litho machine resolving power by the Rayleigh Diffraction Theorem is as follows:
R＝k
1λ/NA
In following formula, R is the resolving power of litho machine, k
1Be the technological coefficient factor, λ is operation wavelength, and NA is the numerical aperture of light projection photoetching objective lens.Therefore, in order to satisfy higher resolution, the wavelength decreases of light source and the numerical aperture that increases projection optical system need to be realized, but during the wavelength decreases of light source, can be very limited because optical glass is used for the material category of projection optical system to Optical Absorption.
Summary of the invention
Technology of the present invention is dealt with problems: for solving the existing low deficiency of projection optical system resolution, a kind of immersion ultraviolet optics system that realizes ultrahigh resolution is provided, and aberration for compensation, promote image quality better, and promoted system resolution, improve photoetching efficient.
Technical solution of the present invention: a kind of immersion ultraviolet optics system, comprise successively first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5 along its optical axis direction, wherein first module L1, second unit L2, the 4th unit L4 and the 5th unit L5 are in same optical axis; First module group L1 has positive refracting power, and second unit group L2 has positive refracting power, and the 3rd unit group L3 has positive refracting power, and the 4th unit group L4 has negative refracting power, and the 5th unit group L5 has negative refracting power.
Described first module L1 comprises the first positive lens 1, the second positive lens 2, the 3rd positive lens 3 and the 4th positive lens 4.
Described second unit L2 comprises the 5th positive lens 5, the first negative lens 6, the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens 9.
Described the 3rd unit L3 comprises the first catoptron 10, the second negative lens 11, the 9th positive lens 12, the tenth positive lens 13, the second catoptron 14, the 3rd catoptron 18.
Described the 4th unit L4 comprises the 3rd negative lens 19, the 4th negative lens 20, the 5th negative lens 21, the 11 positive lens 22, the 12 positive lens 23.
Described the 5th unit L5 comprises the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the tenth negative lens 28, the 11 negative lens 29, the 12 negative lens 30, the 13 negative lens 31, the 14 negative lens 32, image planes 33.
Optical element in described first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5 is all the monolithic mirror, fixes relative position between each optical element with the mechanical component on the optical element housing.
The optical material that the refracting telescope of described immersion ultraviolet optics system uses is all fused quartz.
The present invention and prior art have the following advantages:
(1) structure of the present invention forms aberration for compensation better, has promoted image quality, and has promoted system resolution, has improved photoetching efficient.
(2) the numerical aperture NA of immersion ultraviolet optics of the present invention system is 1.35, and operation wavelength is 193 nanometers, and image space is larger, be 26mm * 5.5mm, because numerical aperture of objective is very large, overcome the low deficiency of existing projection optical system resolution, improved photoetching resolution.
(3) immersion ultraviolet optics entire system of the present invention is made of 32 lens, is all the monolithic mirror, does not adopt the gummed optical element, and is simple and compact for structure.
(4) 32 optical elements in immersion ultraviolet optics of the present invention system, by five cell formations, use two catoptrons that light path is turned back, and effectively reduced system length.
(5) immersion ultraviolet optics of the present invention system has adopted two telecentric systems, can guarantee the reduction magnification of projection exposure optical system, and heart degree far away is high, and object space be the heart definitely far away, reaches 1.53mrad as Fang Yuanxin.
(6) immersion ultraviolet optics system proposed by the invention, can be applied to the lighting source wavelength is in the deep UV projection photoetching device of 193nm.
Description of drawings
Fig. 1 is the structural representation of a kind of immersion ultraviolet optics of the present invention system;
Fig. 2 is projection optical system astigmatism of the present invention and the curvature of field, distortion schematic diagram, and its left figure is astigmatism and curvature of field figure, and right figure is distortion figure.
label declaration: 1-the first positive lens, 2-the second positive lens, 3-the 3rd positive lens, 4-the 4th positive lens, 5-the 5th positive lens, 6-the first negative lens, 7-the 6th positive lens, 8 the 7th positive lenss, 9-the 8th positive lens, 10-the first catoptron, 11-the second negative lens, 12-the 9th positive lens, 13-the tenth positive lens, 14-the second catoptron, 18-the 3rd catoptron, 19-the 3rd negative lens, 20-the 4th negative lens, 21-the 5th negative lens, 22-the 11 positive lens, 23-the 12 positive lens, 24-the 6th negative lens, 25-the 7th negative lens, 26-the 8th negative lens, 27-the 9th negative lens, 28-the tenth negative lens, 29-the 11 negative lens, 30-the 12 negative lens, 31-the 13 negative lens, 32-the 14 negative lens, the 33-image planes.
Embodiment
As shown in Figure 1, be immersion ultraviolet optics system layout schematic diagram of the present invention, 32 optical elements form first module L1, second unit L2, the 3rd unit L3, the 4th unit L4 and the 5th unit L5, arrange from the light beam incident direction successively.
First module L1 is the unit group with positive refracting power, comprises the first positive lens 1, the second positive lens 2, the 3rd positive lens 3 and the 4th positive lens 4.Ray cast is assembled by the first positive lens 1 to the first positive lens 1, then arrives the 3rd positive lens 3 after assembling through the second positive lens 2, incides the 4th positive lens 4 after the first negative lens 3 is assembled.
Second unit L2 is the unit group with positive refracting power, comprises the 5th positive lens 5, the first negative lens 6, the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens 9.Light enters the first negative lens 6 through the 5th positive lens 5 convergences after the 4th positive lens 4 of first module L1 is assembled, arrive the 6th positive lens 7 after the first negative lens 6 is dispersed, leave second unit L2 after the 6th positive lens 7, the 7th positive lens 8 and the 8th positive lens are assembled for 9 three times continuously.
The 3rd unit L3 is the unit group with positive refracting power, comprises the first catoptron 10, the second negative lens 11, the 9th positive lens 12, the tenth positive lens 13, the second catoptron 14, the 3rd catoptron 18.Lens in this unit between the first catoptron 10 and the second catoptron 14 are because light reflection has used twice, light arrives the second negative lens 11 after the first catoptron 10 reflections, after dispersing, the second negative lens 11 enters the 9th positive lens 12, arrive the second catoptron 14 through the 9th positive lens 12, the tenth positive lens 13 after assembling continuously, and by leaving the 3rd unit L3 after the 3rd catoptron 18.
The 4th unit L4 is the unit group with negative refracting power, comprises the 3rd negative lens 19, the 4th negative lens 20, the 5th negative lens 21, the 11 positive lens 22, the 12 positive lens 23.Light enters the 4th unit L4 and enter the 11 positive lens 22 after the dispersing continuously of the 3rd negative lens 19, the 4th negative lens 20, the 5th negative lens 21, arrive the 12 positive lens 23, the 12 23 pairs of light of positive lens and assemble the diaphragm of rear arrival optical system after the 11 positive lens 22 is assembled.
The 5th unit L5 is the unit group with negative refracting power, comprises the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the tenth negative lens 28, the 11 negative lens 29, the 12 negative lens 30, the 13 negative lens 31, the 14 negative lens 32, image planes 33.Light enters the 4th unit L4 and arrive image planes 33 after the dispersing continuously of the 6th negative lens 24, the 7th negative lens 25, the 8th negative lens 26, the 9th negative lens 27, the tenth negative lens 28, the 11 negative lens 29, the 12 negative lens 30, the 13 negative lens 31, the 14 negative lens 32.
This optical system is folding with optical system cleverly by three catoptrons, has effectively shortened system's overall length.What in the present invention, all diaphotoscopes used is all the fused quartz material, and the refractive index of fused quartz glass is 1.560491 when centre wavelength 193nm place.
For satisfying the structural parameters requirement, and further improve picture element, system is carried out Continuous optimization, change through each surperficial radius after optimizing and thickness interval, the concrete Optimized Measures of the present embodiment is Applied Optics Design software construction majorized function, and add aberration and structural limitations parameter, progressively be optimized for existing result.
The embodiment of the present invention realizes by following technical measures: lighting source operation wavelength 193 nanometers, image space 26mm * 5.5mm, the numerical aperture of optical system (NA)=1.35, photolithography resolution (R)=40 nanometer, the optical system reduction magnification is 4 times, and projection exposure optical system the first mirror is apart from mask 42.10mm.
Immersion ultraviolet optics of the present invention system be the front 42.10 millimeters places of the first positive lens that mask is placed in objective system with object plane, each field of view center light vertical incidence first positive lens, this immersion ultraviolet optics system is the object space heart far away at object space, enter L4 unit group after the continuous convergence of light through L1 unit group, L2 unit group and L3 unit group, then disperse through L4 unit group and L5 unit group twice, dwindling four times, to be imaged on image planes be on silicon chip.The chief ray vertical incidence image planes of nine visual fields of immersion ultraviolet optics system, system is telecentric beam path in image space.
The distance of immersion ultraviolet optics system of the present invention from the mask face to the silicon chip face is 1480mm, compact conformation.The object space of this system is the heart definitely far away, be 1.53mrad as the Fang Yuanxin degree, the heart degree far away of object space picture side is all very high, radius-of-curvature, thickness by optimizing each lens and change the various aberrations that interval between each lens reduces optical system, the final distortion of system is that wave aberration is less than 1nm less than 1nm.
In practical operation, the design parameter of above each lens (as radius-of-curvature, lens thickness, lens intervals) can be done certain adjustment and satisfy different systematic parameter requirements.
The following several evaluation meanses of immersion ultraviolet optics system's employing that the present embodiment is made are tested and assessed:
1, root mean square wave aberration
Wave aberration is the optical assessment index that all will use of the very high optical system of image quality, and it can intuitively react the situation of low order aberration and higher order aberratons.The immersion ultraviolet optics system that the present embodiment is designed, table 1 has been listed the root mean square wave aberration of each visual field of each visual field take barycenter as reference, and wherein ω represents full visual field, and λ represents wavelength, and as can be known, the maximum wave aberration of this system is 0.75 nanometer.
The root mean square wave aberration of each visual field of table 1
| The visual field | The root mean square wave aberration |
| 0.2ω | 0.0018λ |
| 0.3ω | 0.0020λ |
| 0.4ω | 0.0022λ |
| 0.5ω | 0.0025λ |
| 0.6ω | 0.0026λ |
| 0.7ω | 0.0030λ |
| 0.8ω | 0.0033λ |
| 0.9ω | 0.0035λ |
| 1.0ω | 0.0039λ |
2, spherical aberration, astigmatism, the curvature of field and distortion
Distortion can make a picture point be offset from ideal position, and in order to guarantee alignment precision, distortion causes the displacement of picture point should be no more than the width of the extra fine wire bar that will scribe.Fig. 2 has provided the various aberration curve figure of the described projection optical system of the present embodiment.As can be seen from Figure 2, the curvature of field maximal value of this system is 11nm, and the astigmatism maximal value is 8nm, and the distortion maximum of optical system is-2.8e-8 that full visual field maximum distortion is less than 1nm.
The radius-of-curvature of the present invention by optimizing each mirror, thickness parameter, asphericity coefficient and lens intervals have obtained high resolving power, picture element good immersion ultraviolet optics system, have the advantages such as whole compact conformation heart degree simple, far away is high, imaging is good.
The non-elaborated part of the present invention belongs to those skilled in the art's known technology.
Above-described specific descriptions; purpose, technical scheme and beneficial effect to invention further describe; institute is understood that; the above is only specific embodiments of the invention; be used for explaining the present invention, the protection domain that is not intended to limit the present invention, within the spirit and principles in the present invention all; any modification of making, be equal to replacement, improvement etc., within protection scope of the present invention all should be included in.
Claims (4)
1. immersion ultraviolet optics system, it is characterized in that: comprise successively first module (L1), second unit (L2), Unit the 3rd (L3), Unit the 4th (L4) and Unit the 5th (L5) along its optical axis direction, wherein first module (L1), second unit (L2), Unit the 4th (L4) and Unit the 5th (L5) are in same optical axis;
(L1 is the unit group with positive refracting power to first module, comprises the first positive lens (1), the second positive lens (2), the 3rd positive lens (3) and the 4th positive lens (4); Ray cast is assembled by the first positive lens (1) to the first positive lens (1), then arrives the 3rd positive lens (3) after assembling through the second positive lens (2), incides the 4th positive lens (4) after the first negative lens (3) is assembled;
Second unit (L2) comprises the 5th positive lens (5), the first negative lens (6), the 6th positive lens (7), the 7th positive lens (8) and the 8th positive lens (9) for to have the unit group of positive refracting power; After light is assembled from the 4th positive lens (4) of first module (L1), convergence enters the first negative lens (6) through the 5th positive lens (5), arrival the 6th positive lens (7) after the first negative lens (6) is dispersed leaves second unit (L2) after the 6th positive lens (7), the 7th positive lens (8) and the 8th positive lens are assembled for (9) three times continuously;
Unit the 3rd (L3) comprises the first catoptron (10), the second negative lens (11), the 9th positive lens (12), the tenth positive lens (13), the second catoptron (14), the 3rd catoptron (18) for to have the unit group of positive refracting power; The lens that are positioned in this unit between the first catoptron (10) and the second catoptron (14) have used twice because of light reflection, light arrives the second negative lens (11) after the first catoptron (10) reflection, after dispersing, the second negative lens (11) enters the 9th positive lens (12), after assembling continuously, the 9th positive lens (12), the tenth positive lens (13) arrive the second catoptron (14), and by leaving Unit the 3rd (L3) after the 3rd catoptron (18);
Unit the 4th (L4) comprises the 3rd negative lens (19), the 4th negative lens (20), the 5th negative lens (21), the 11 positive lens (22), the 12 positive lens (23) for to have the unit group of negative refracting power; Light enters Unit the 4th (L4) and enter the 11 positive lens (22) after the dispersing continuously of the 3rd negative lens (19), the 4th negative lens (20), the 5th negative lens (21), arrive the 12 positive lens (23) after the 11 positive lens (22) is assembled, the 12 positive lens (23) is assembled the diaphragm of rear arrival optical system to light;
Unit the 5th (L5) is for to have the unit group of negative refracting power, comprise the 6th negative lens (24), the 7th negative lens (25), the 8th negative lens (26), the 9th negative lens (27), the tenth negative lens (28, the 11 negative lens (29), the 12 negative lens (30), the 13 negative lens (31), the 14 negative lens (32), image planes (33); Light enters Unit the 4th (L4) arrival image planes (33) after the dispersing continuously of the 6th negative lens (24), the 7th negative lens (25), the 8th negative lens (26), the 9th negative lens (27), the tenth negative lens (28), the 11 negative lens (29), the 12 negative lens (30), the 13 negative lens (31), the 14 negative lens (32).
2. immersion ultraviolet optics according to claim 1 system, it is characterized in that: the lens in described first module (L1), second unit (L2), Unit the 3rd (L3), Unit the 4th (L4) and Unit the 5th (L5) are all monolithic mirrors, fix relative position between each optical element with the mechanical component on the optical element housing.
3. immersion ultraviolet optics according to claim 1 system, it is characterized in that: the optical material that the lens in described first module (L1), second unit (L2), Unit the 3rd (L3), Unit the 4th (L4) and Unit the 5th (L5) all use is fused quartz.
4. immersion ultraviolet optics according to claim 1 system is characterized in that: the numerical aperture NA of described immersion ultraviolet optics system is 1.35, and operation wavelength is 193 nanometers, and image space is 26mm * 5.5mm.
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| CN201310062008.6A CN103149808B (en) | 2013-02-27 | 2013-02-27 | Immersed ultraviolet optical system |
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| CN103149808A true CN103149808A (en) | 2013-06-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112927305A (en) * | 2021-02-23 | 2021-06-08 | 桂林电子科技大学 | Geometric dimension precision measurement method based on telecentricity compensation |
| WO2023109000A1 (en) * | 2021-12-13 | 2023-06-22 | 长鑫存储技术有限公司 | Photoresist pattern forming method and projection exposure apparatus |
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Cited By (3)
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| CN112927305A (en) * | 2021-02-23 | 2021-06-08 | 桂林电子科技大学 | Geometric dimension precision measurement method based on telecentricity compensation |
| CN112927305B (en) * | 2021-02-23 | 2024-04-02 | 桂林电子科技大学 | Geometric dimension precision measurement method based on telecentricity compensation |
| WO2023109000A1 (en) * | 2021-12-13 | 2023-06-22 | 长鑫存储技术有限公司 | Photoresist pattern forming method and projection exposure apparatus |
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