CN103137891A - Organic light-emitting diodes (LEDs) and organic LED displayer composed of the same - Google Patents
Organic light-emitting diodes (LEDs) and organic LED displayer composed of the same Download PDFInfo
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- CN103137891A CN103137891A CN2011103927078A CN201110392707A CN103137891A CN 103137891 A CN103137891 A CN 103137891A CN 2011103927078 A CN2011103927078 A CN 2011103927078A CN 201110392707 A CN201110392707 A CN 201110392707A CN 103137891 A CN103137891 A CN 103137891A
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- 239000000758 substrate Substances 0.000 claims abstract description 51
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- 230000000873 masking effect Effects 0.000 claims description 51
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- 239000002184 metal Substances 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 2
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- FWLGASJILZBATH-UHFFFAOYSA-N gallium magnesium Chemical compound [Mg].[Ga] FWLGASJILZBATH-UHFFFAOYSA-N 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims description 2
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 description 17
- 230000008020 evaporation Effects 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 9
- -1 ITO) Chemical compound 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
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- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
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- LFKMKZZIPDISEK-UHFFFAOYSA-L magnesium;4-carboxy-2,6-dihydroxyphenolate Chemical compound [Mg+2].OC1=CC(C([O-])=O)=CC(O)=C1O.OC1=CC(C([O-])=O)=CC(O)=C1O LFKMKZZIPDISEK-UHFFFAOYSA-L 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80522—Cathodes combined with auxiliary electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/179—Interconnections, e.g. wiring lines or terminals
- H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
Abstract
The invention provides organic light-emitting diodes (LEDs) and an organic LED displayer composed of the same. Each organic LED comprises a substrate which comprises a pixel electrode area and an auxiliary electrode area, and an insulating layer formed between the pixel electrode area and the auxiliary electrode area, wherein the pixel electrode area comprises a first electrode formed on the substrate, an organic layer formed on the first electrode and a second electrode formed on the organic layer, and the auxiliary electrode layer comprises an auxiliary electrode formed on the substrate and a shielding structure formed on the auxiliary electrode or on the insulating layer. The shielding structure shields partial auxiliary electrode, and the second electrode is in electric connection with the auxiliary electrode.
Description
Technical field
The invention relates to a kind of Organic Light Emitting Diode, and particularly relevant for a kind of Organic Light Emitting Diode of pressure drop and organic light emitting diode display that it forms avoided.
Background technology
Organic Light Emitting Diode (organic light-emitting diode) due to have high brightness, light, thin, do not need the advantages such as backlight, low consumpting power, to be widely used on flat-panel screens.
See also Figure 1A, it shows the vertical view of existing Organic Light Emitting Diode 10, it comprises viewing area 12a and the surrounding zone 12b that is positioned at 12a periphery, viewing area, auxiliary electrode via (contact hole) 14 is positioned at surrounding zone 12b, in order to be electrically connected to the top electrode (not shown) that is positioned at viewing area 12a.Power supply is from auxiliary electrode via 14 inputs of surrounding zone 12b, be sent to again afterwards in the 12a of viewing area, yet, because the transmission range distance causes inhomogeneous electric current, and then the problem of generation pressure drop (voltage drop) and brightness disproportionation, and for large-sized monitor, problem of pressure drop can be more remarkable.
In order to solve the problem of pressure drop and brightness disproportionation, see also the vertical view of the existing Organic Light Emitting Diode 10 of Figure 1B, be arranged at auxiliary electrode exposed area 16 in the 12a of viewing area and between adjacent pixel electrode 18.Yet, cover the position of auxiliary electrode exposed area 16 for fear of organic layer, accurate metal cover 17 need to be set, this metal cover 17 is made and is difficult for, cost is high and aligning is difficult, and makes large-sized monitor, and large-sized metal cover easily has the problem of bending (bending).
Therefore, industry is needed badly and is proposed a kind of Organic Light Emitting Diode, and this structure can solve the above-mentioned problem of mentioning.
Summary of the invention
The invention provides a kind of Organic Light Emitting Diode (OLED), comprising: a substrate, wherein this substrate comprises a pixel electrode district and an auxiliary electrical polar region; And an insulating barrier, be formed between this pixel electrode district and this auxiliary electrical polar region; Wherein this pixel electrode district comprises; One first electrode is formed on this substrate; One organic layer is formed on this first electrode; One second electrode is formed on this organic layer; Wherein this auxiliary electrical polar region comprises: an auxiliary electrode is formed on this substrate; One masking structure is formed on this auxiliary electrode or on this insulating barrier, wherein this masking structure hides this auxiliary electrode of part, and this second electrode is electrically connected to this auxiliary electrode.
The present invention separately provides a kind of Organic Light Emitting Diode (OLED) display, comprising: a first substrate and a second substrate are oppositely arranged; And one Organic Light Emitting Diode of the present invention be arranged between this first substrate and this second substrate.
Organic Light Emitting Diode provided by the present invention and organic light emitting diode display can effectively be avoided pressure drop.
Description of drawings
Figure 1A to Figure 1B is a series of vertical views, in order to the structure of existing Organic Light Emitting Diode to be described.
Fig. 2 is a vertical view, in order to the structure of Organic Light Emitting Diode of the present invention to be described.
Fig. 3 A, Fig. 3 B, Fig. 3 C to Fig. 3 D are a series of profiles, in order to the method for making of Organic Light Emitting Diode of the present invention to be described.
Fig. 4 A to Fig. 4 B is a series of profiles, in order to the angle between evaporation source of the present invention (or sputtering source) and substrate to be described.
Fig. 5 is a profile, in order to the second embodiment of masking structure of the present invention to be described.
Fig. 6 is a profile, in order to the 3rd embodiment of masking structure of the present invention to be described.
Fig. 7 is a profile, in order to the 4th embodiment of masking structure of the present invention to be described.
Fig. 8 A is a vertical view, in order to the 5th embodiment of masking structure of the present invention to be described.
Fig. 8 B is a profile, in order to the 5th embodiment of masking structure of the present invention to be described.
Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D, Fig. 9 E to Fig. 9 F are a series of vertical views, in order to Organic Light Emitting Diode of the present invention to be described.
Figure 10 A, Figure 10 B to Figure 10 C are a series of vertical views, in order to the line configuring of auxiliary electrode of the present invention to be described.
Figure 11 is a profile, in order to organic light emitting diode display of the present invention to be described.
Drawing reference numeral:
10,20～Organic Light Emitting Diode
12a～viewing area
12b～surrounding zone
14～auxiliary electrode via
16～auxiliary electrode exposed area
17～metal cover
18～pixel electrode
101～substrate
102～flatness layer
102a～pixel electrode district
102b～auxiliary electrode exposed area
104～the first electrodes
The ground floor of 104a～first electrode
The second layer of 104b～first electrode
The 3rd layer of 104c～first electrode
106～organic layer
108～the second electrodes
The ground floor of 108a～second electrode
The second layer of 108b～second electrode
120～insulating barrier
134～auxiliary electrode
The ground floor of 134a～auxiliary electrode
The second layer of 134b～auxiliary electrode
The 3rd layer of 134c～auxiliary electrode
136～masking structure
The upper surface of 136a～masking structure
The lower surface of 136b～masking structure
138～masking structure
138a～ground floor class trapezium structure
138b～second layer class inverted trapezoidal structure
140～masking structure
The length of the upper surface of W1～masking structure
The length of the lower surface of W2～masking structure
300～Organic Light Emitting Diode
450～sputtering source
452～evaporation source
612a～active region
612b～surrounding zone
710～first substrate
720～second substrate
Embodiment
For above and other purpose of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and coordinate appended accompanying drawing, be described in detail below:
Fig. 2 is the vertical view of top-emission of the present invention (top emission) Organic Light Emitting Diode 20, Fig. 3 A, Fig. 3 B, Fig. 3 C to Fig. 3 D are a series of profiles along AA ' line segment in Fig. 2, and it shows the method for making of the Organic Light Emitting Diode of top-emission of the present invention (top emission).At first, see also Fig. 3 A, a substrate 101 is provided.In passive array organic light emitting diode display, substrate 101 materials are general glass substrate, also can be plastic substrate in another embodiment.In the active array organic light emitting diode display, substrate 101 is a thin-film transistor (TFT) substrate, and its substrate material can be glass substrate, also can be plastic substrate.
Then, first form flatness layer 102 on substrate 101, form conductive layer afterwards on flatness layer 102, then via patterning process, form the first electrode 104 and auxiliary electrode 134.In the active array organic light emitting diode display, the first electrode 104 is electrically connected to thin-film transistor (TFT) (not shown), and its thin-film transistor TFT is in order to control each pixel.
Afterwards, coating and patterning photoresist layer are on the first electrode 104 and auxiliary electrode 134, photoresist layer after patterning forms an insulating barrier 120, this insulating barrier 120 is in order to define pixel electrode district 102a and auxiliary electrical polar region, and wherein not being insulated the zone definitions that layer 120 covers is auxiliary electrode exposed area 102b.In embodiments of the invention, photoresist layer is comprised of eurymeric photoresist (positive photoresist), therefore, through after patterning step, can obtain the insulating barrier 120 of class trapezoidal shape, meaning is that insulating barrier 120 has a upper surface and a lower surface, and from profile, the length that is shorter in length than lower surface of upper surface.
It is noted that, in pixel electrode district 102a, the first electrode 104 is formed on substrate 101; In auxiliary electrode exposed area 102b, auxiliary electrode 134 is formed on substrate 101.The first electrode 104 can be the structure of single or multiple lift, and it can comprise metal level, transparency conducting layer or above-mentioned combination.And auxiliary electrode 134 can be the structure of single or multiple lift, can comprise equally metal level, transparency conducting layer or above-mentioned combination.The first electrode 104 can form by same steps as or different step with auxiliary electrode 134, separately says it, and both are comprised of identical or different material.
In embodiments of the invention, the first electrode 104 comprises ground floor 104a, second layer 104b and the 3rd layer of 104c, and wherein ground floor 104a and the 3rd layer of 104c are comprised of transparency conducting layer, and second layer 104b is comprised of metal level.Same, auxiliary electrode 134 comprises ground floor 134a, second layer 134b and the 3rd layer of 134c, wherein ground floor 134a and the 3rd layer of 134c are comprised of transparency conducting layer, and second layer 134b is comprised of metal level.
Above-mentioned metal level comprises aluminium (Al), calcium (Ca), silver (Ag), nickel (Ni), chromium (Cr), titanium (Ti), magnesium (Mg), tungsten (W), molybdenum (Mo) or above-mentioned alloy.above-mentioned transparency conducting layer comprises tin indium oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), cadmium tin (cadmium tin oxide, CTO), aluminum zinc oxide (aluminum zinc oxide, AZO), tin indium oxide zinc (indium tin zinc oxide, ITZO), zinc oxide (zinc oxide), cadmium oxide (cadmium oxide, CdO), hafnium oxide (hafnium oxide, HfO), indium oxide gallium zinc (indium gallium zinc oxide, InGaZnO), indium oxide gallium zinc-magnesium (indium gallium zinc magnesium oxide, InGaZnMgO), indium oxide gallium magnesium (indium gallium magnesium oxide, InGaMgO) or indium oxide gallium aluminium (indium gallium aluminum oxide, InGaAlO).
Afterwards, see also Fig. 3 B, form masking structure 136 on auxiliary electrode 134, masking structure 136 has upper surface 136a and lower surface 136b, and the length W1 of upper surface 136a is greater than the length W2 of lower surface 136b, that is masking structure 136 has class inverted trapezoidal shape.In addition, has an angle α between masking structure 136 and auxiliary electrode 134 less than 90 degree.
Afterwards, see also Fig. 3 C, form organic layer 106 on the first electrode 104, wherein organic layer 106 extends to auxiliary electrode exposed area 102b from pixel electrode district 102a through insulating barrier 120.The mode of formation organic layer 106 is evaporation for example.Organic layer 106 may be comprised of following part or all material layer: hole injection layer (hole injection layer, HIL), hole transmission layer (hole transporting layer, HTL), luminescent layer (light emitting layer), electron transfer layer (electron transporting layer) and electron injecting layer (electron injection layer).
Then, form the ground floor 108a of the second electrode 108 on organic layer 106, wherein the ground floor 108a of the second electrode 108 extends to auxiliary electrode exposed area 102b from pixel electrode district 102a through insulating barrier 120.Afterwards, see also Fig. 3 D, form the second layer 108b of the second electrode 108 on ground floor 108a, in this, complete the structure of Organic Light Emitting Diode 300 of the present invention.
In embodiments of the invention, the ground floor 108a of the second electrode 108 is comprised of metal level, can form by evaporation; Second layer 108b is comprised of transparency conducting layer, can pass through sputtering method (sputter) and form.
it is noted that, because the ground floor 108a of organic layer 106 and the second electrode 108 is formed by evaporation, and when evaporating, chamber pressure is about 10-3-10-5Pa, the average free footpath of gas in cavity (Mean free path) is about 600-7000cm, and the distance of substrate 101 and evaporation source is about 10-20cm, far be shorter than free electrical path length, therefore before encountering the evaporation target, the probability of evaporation particle collision is very little, evaporation particle is almost straight ahead, so when namely running into veil before being shorter than average free footpath, still the evaporation particle of straight ahead will be stopped and be difficult for being formed at below veil this moment.Therefore when evaporating the ground floor 108a of organic layer 106 and the second electrode 108, (in the present embodiment diagram, finger closely is parallel to Z-direction and moves because of average free footpath principle; In other embodiment, may move along different axes of coordinates or other directions because the position that evaporation source is put is different), can be subject to masking structure 136 upper surfaces covers, and be difficult for being formed at masking structure 136 vertical under on the position of (referring to parallel Z-direction in the present embodiment), another speech, due to the class inverted trapezoidal shape of masking structure 106, make the ground floor 108a of organic layer 106 and the second electrode 108 not cover auxiliary electrode 134 fully.
afterwards, when forming the second layer 108b of the second electrode 108, owing to carrying out sputter, chamber pressure is about 0.1-1Pa, in cavity, the average free footpath of gas is about 0.5-7cm, and the distance of substrate 101 and sputtering source is about 10-20cm, be longer than free electrical path length, therefore, sputtering particle just changes direct of travel because mutually colliding before arriving the sputter target, therefore sputtering particle just can be walked around veil and still can form in the below of veil, therefore when carrying out the second layer 108b of sputter the second electrode 108, second layer 108b can walk around masking structure 106 and still is formed on auxiliary electrode 134 below it and is electrically connected to auxiliary electrode 134.
Please refer to Fig. 4 A, omitted other masking structures or electrode layer structure except substrate 101 on figure, only illustrate as the substrate 101 of adjusting angle reference.In another embodiment, also can be when the second layer 108b of sputter the second electrode 108, adjust the sputtering source 450 of second layer 108b and the sputter angle θ 1 between substrate 101, make the second layer 108b of the second electrode 108 can easily be formed at masking structure 106 belows, and the second electrode 108 is electrically connected to auxiliary electrode 134, wherein, θ 1 is acute angle (0＜θ 1＜90).
It is noted that, in another embodiment, also can form by sputtering method the second electrode of individual layer, because organic layer does not cover auxiliary electrode fully, therefore, the second electrode of individual layer can be formed on auxiliary electrode partly and be electrically connected to auxiliary electrode.
In addition, in another embodiment, please refer to Fig. 4 B, when the ground floor 108a of evaporation the second electrode, can be by the evaporation source 452 of adjustment ground floor 108a and the evaporation angle θ 2 (θ 2＜θ 1) between substrate 101, make the ground floor 108a of the second electrode 108 also be easy to be deposited on auxiliary electrode 134, and the second electrode 108 is reached with auxiliary electrode 134 be electrically connected to.Wherein, θ 1 is acute angle (0＜θ 1＜90,0＜θ 2＜90 and θ 2＜θ 1) with the angular range of θ 2.
Therefore, can make the ground floor 108a of the second electrode be electrically connected to the chance increasing with auxiliary electrode 134 with second layer 108b by adjusting the angle of sputtering source 450 or evaporation source 452, can greatly improve the effect that reduces pressure drop.
The embodiment of Fig. 3 A of the present invention, Fig. 3 B, Fig. 3 C to Fig. 3 D is the Organic Light Emitting Diode of top-emission (top emission), this embodiment is by the design of the class inverted trapezoidal shape of masking structure 136, make the ground floor 108a of organic layer 106 and the second electrode 108 not cover auxiliary electrode fully, thereby can be electrically connected to auxiliary electrode 134 by the second layer 108b of the second electrode, to reach the effect that reduces the second electrode 108 pressure drops (voltage drop).
Yet Organic Light Emitting Diode of the present invention is not limited to be applied in top-emission (top emission), also can be applicable to the Organic Light Emitting Diode of bottom emission.Organic Light Emitting Diode in bottom emission, can form the second thicker electrode on organic layer, and can pass through equally the design of the special shape of masking structure, make the second electrode be formed on auxiliary electrode partly and be electrically connected to auxiliary electrode, to reach the effect that reduces the second electrode drop (voltage drop).No matter Organic Light Emitting Diode is top or bottom emission formula, the first electrode and the second electrode are one of at least transparency electrode, and another is transparent or opaque electrode, send to help light.
It is noted that, in first embodiment of the invention, the height of masking structure 136 is lower than insulating barrier 120.In the second embodiment, see also Fig. 5, wherein the height of masking structure 136 is higher than insulating barrier 120.Therefore, though the height of masking structure 136 higher than, equal or lower than insulating barrier 120, as long as on masking structure 136, length surface is greater than lower surface length, and masking structure 136 hides the auxiliary electrode 134 of part, to avoid organic layer 106 to cover auxiliary electrode 134 fully, and when follow-up formation the second electrode 108, make the second electrode 108 be electrically connected to lower pressure drop with auxiliary electrode 134, can reach purpose of the present invention and belong to scope of the present invention.
see also Fig. 6, it shows the 3rd embodiment of masking structure of the present invention, number in the figure person identical with Fig. 3 D represents similar elements, wherein masking structure 138 comprises ground floor class trapezium structure 138a and second layer class inverted trapezoidal structure 138b, two-layer formation class double trapezoid shape, it can avoid follow-up organic layer (not show in figure equally, can be with reference to figure 3D) hide auxiliary electrode 134 fully, so that follow-up the second electrode (does not show in figure, can be with reference to figure 3D) be electrically connected to auxiliary electrode 134, reduce (the demonstration in figure of the second electrode to reach, can be with reference to figure 3D) effect of pressure drop (voltage drop).
See also Fig. 7, it shows the 4th embodiment of masking structure of the present invention, and number in the figure person identical with Fig. 6 represents similar elements, and wherein the height of masking structure 138 is higher than insulating barrier 120.
See also Fig. 8 A to Fig. 8 B, it shows the 5th embodiment of masking structure of the present invention, and wherein Fig. 8 A is vertical view, and Fig. 8 B is the profile along BB ' the line gained of Fig. 8 A, and number in the figure person identical with Fig. 3 D represents similar elements.In the 5th embodiment, masking structure 140 is formed on insulating barrier 120, and masking structure 140 has class inverted trapezoidal shape equally, therefore, can avoid follow-up organic layer (show in figure, can with reference to figure 3D) to cover auxiliary electrode 134 fully, so that follow-up the second electrode (does not show in figure, can be with reference to figure 3D) be electrically connected to auxiliary electrode 134, to reach the effect that reduces the second electrode (show in figure, can with reference to figure 3D) pressure drop (voltage drop).
See also Fig. 9 A, Fig. 9 B, Fig. 9 C, Fig. 9 D, Fig. 9 E to Fig. 9 F, it shows that the auxiliary electrode exposed area of Organic Light Emitting Diode of the present invention has the vertical view of the embodiment of different pattern, and it comprises active region 612a and the surrounding zone 612b that is positioned at active region 612a periphery.
Please coordinate referring to Figure 10 A, Figure 10 B to Figure 10 C, these figure show the line configuring vertical view of auxiliary electrode 134 of the present invention.It is noted that, in Figure 10 A, Figure 10 B to Figure 10 C, auxiliary electrode 134 is positioned at viewing area 12a, and the auxiliary electrode via that auxiliary electrode 134 can be electrically connected to surrounding zone 12b (does not show on figure, be similar to the auxiliary electrode via 14 of Figure 1A), to be electrically connected to (not showing on figure) with external drive circuit or power supply.
In Figure 10 A, the cancellated auxiliary electrode circuit figure that auxiliary electrode 134 is arranged along each or interval ordered series of numbers capable (column and row).On figure only illustration to draw auxiliary electrode exposed area 102b be circular-arc embodiment, and be not to need in each auxiliary electrode 134 crossing elimination places, auxiliary electrode exposed area 102b to be set all.In other embodiment, auxiliary electrode exposed area 102b can be block, circular-arc or strip.
In Figure 10 B, auxiliary electrode 134 is along each or interval ordered series of numbers (column) and the auxiliary electrode circuit figure that arranges.On figure only illustration to draw auxiliary electrode exposed area 102b be circular-arc embodiment.In other embodiment, auxiliary electrode exposed area 102b can be block, circular-arc or strip.
In Figure 10 C, auxiliary electrode 134 is along each or space-number row (row) and the auxiliary electrode circuit figure that arranges.On figure only illustration to draw auxiliary electrode exposed area 102b be circular-arc embodiment.In other embodiment, auxiliary electrode exposed area 102b can be block, circular-arc or strip.
In Fig. 9 A, auxiliary electrode exposed area 102b is circular shape, and it is not formed at each pixel electrode district 102a, but one, interval or several pixel electrodes districts just arrange an auxiliary electrode exposed area 102b.
In another embodiment, auxiliary electrode exposed area 102b can be formed at by each pixel electrode district 102a.The auxiliary electrode of auxiliary electrode exposed area 102b below can be selected different auxiliary electrode circuit patterns according to configuration.
In an embodiment, when the auxiliary electrode exposed area is formed at each side, pixel electrode district, can select the auxiliary electrode circuit pattern of the net-like pattern of Figure 10 A, also can select the auxiliary electrode pattern of Figure 10 B or Figure 10 C.
In another embodiment, when one, auxiliary electrode exposed area interval or several pixel electrodes districts just arrange an auxiliary electrode exposed area 102b, can select the net-like pattern of Figure 10 A, also can select the auxiliary electrode circuit pattern of Figure 10 B or Figure 10 C.
Hence one can see that, the interval of auxiliary electrode pattern can arrange in pairs or groups the auxiliary electrode exposed area planning and arrange, therefore, the auxiliary electrode pattern might not all arrange the auxiliary electrode circuit between each pixel, also but interval one to several pixels just arrange cabling, look closely the needs of design and can select arbitrarily the arbitrary auxiliary electrode circuit figure of arbitrary auxiliary electrode exposed area collocation.
In Fig. 9 B, auxiliary electrode exposed area 102b is rectangular groove structure (rectangular-shaped trench) and is positioned at by each row (row) pixel electrode district 102a, and masking structure 136 also has rectangular structure.
In Fig. 9 C, have the auxiliary electrode exposed area 102b of a rectangular groove between N row (row) pixel electrode district 102a, wherein N is more than or equal to 1.
In Fig. 9 D, the auxiliary electrode exposed area 102b that has a rectangular groove between N row (row) pixel electrode district 102a, wherein N is more than or equal to 1, and masking structure 136 is discontinuous block structure or convex structure, only illustrates the block structure schematic diagram on figure.
In Fig. 9 E, auxiliary electrode exposed area 102b is rectangular groove structure and is positioned at by each row (row) pixel electrode district 102a, and masking structure 136 is discontinuous block structure or convex structure, only illustrates the block structure schematic diagram on figure.
In Fig. 9 F, auxiliary electrode exposed area 102b is rectangular groove structure and is positioned at by each row (column) pixel electrode district 102a, and masking structure 136 also has rectangular structure.In another embodiment, but the pixel electrode district 102a of auxiliary electrode exposed area 102b interval one row or ordered series of numbers is other, masking structure 136 is set, its masking structure 136 also has rectangular structure.Only draw wherein a kind of embodiment on figure, also can do corresponding adjustment to row (column) with reference to row's (row) form of figure 9A, Fig. 9 B, Fig. 9 C, Fig. 9 D to Fig. 9 E.
Learnt by above-mentioned discussion, Fig. 9 A, Fig. 9 B, Fig. 9 C to Fig. 9 D all can select arbitrarily the auxiliary electrode circuit pattern of Figure 10 A or Figure 10 C.And in the embodiment that Fig. 9 F or other adjust row (column), the auxiliary electrode circuit pattern of also can select arbitrarily to arrange in pairs or groups Figure 10 A or Figure 10 B.
Spy by masking structure of the present invention states shape and position (be formed on auxiliary electrode or on insulating barrier), make organic layer not cover auxiliary electrode fully, and make the second electrode be electrically connected to auxiliary electrode, reaching the effect that reduces the second electrode drop (voltage drop), and then can promote the uniformity of light-emitting diode luminance.
In addition, the present invention separately provides a kind of organic light emitting diode display, sees also Figure 11, and first substrate 710 is oppositely arranged with second substrate 720; And Organic Light Emitting Diode of the present invention (as the label 300 of Fig. 3 D) is arranged between first substrate 710 and second substrate 720, wherein first substrate 710 is thin film transistor base plate with second substrate 720 one, and another is colored filter substrate, contact panel (touch panel) or base plate for packaging.
Although the present invention discloses as above with several preferred embodiments; so it is not to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can change arbitrarily and retouching, so protection scope of the present invention is when being as the criterion with claim institute confining spectrum.
Claims (19)
1. an Organic Light Emitting Diode, is characterized in that, described Organic Light Emitting Diode comprises:
One substrate, wherein said substrate comprise a pixel electrode district and an auxiliary electrical polar region; And
One insulating barrier is formed between described pixel electrode district and described auxiliary electrical polar region;
Wherein said pixel electrode district comprises;
One first electrode is formed on described substrate;
One organic layer is formed on described the first electrode;
One second electrode is formed on described organic layer;
Wherein said auxiliary electrical polar region comprises:
One auxiliary electrode is formed on described substrate;
One masking structure is formed on described auxiliary electrode or on described insulating barrier, wherein said masking structure hides described auxiliary electrode, and described the second electrode is electrically connected to described auxiliary electrode.
2. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described masking structure has a upper surface and a lower surface, and the length of described upper surface is greater than the length of described lower surface.
3. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described the second electrode extends to described auxiliary electrical polar region from described pixel electrode district through described insulating barrier.
4. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described masking structure comprises class inverted trapezoidal or class double trapezoid shape.
5. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described insulating barrier comprises the class trapezoidal shape.
6. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, has an angle between described masking structure and described auxiliary electrode less than 90 degree.
7. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, the height of described masking structure greater than, be equal to or less than described insulating barrier.
8. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described auxiliary electrode and described the first electrode are comprised of identical or different material.
9. Organic Light Emitting Diode as claimed in claim 1, is characterized in that, described the first electrode comprises metal level, transparency conducting layer or above-mentioned combination.
10. Organic Light Emitting Diode as claimed in claim 9, is characterized in that, described metal level comprises aluminium, calcium, silver, nickel, chromium, titanium, magnesium, tungsten, molybdenum or above-mentioned alloy.
11. Organic Light Emitting Diode as claimed in claim 9, it is characterized in that, described transparency conducting layer comprises tin indium oxide, indium zinc oxide, cadmium tin, aluminum zinc oxide, tin indium oxide zinc, zinc oxide, cadmium oxide, hafnium oxide, indium oxide gallium zinc, indium oxide gallium zinc-magnesium, indium oxide gallium magnesium or indium oxide gallium aluminium.
12. Organic Light Emitting Diode as claimed in claim 1 is characterized in that, described the first electrode and described the second electrode are one of at least transparency electrode, and another is transparent or opaque electrode.
13. Organic Light Emitting Diode as claimed in claim 1 is characterized in that, described organic layer is comprised of following all or part of material: hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer.
14. Organic Light Emitting Diode as claimed in claim 1 is characterized in that, described organic layer extends to described auxiliary electrical polar region from described pixel electrode district through described insulating barrier, and described organic layer does not cover described auxiliary electrode fully.
15. Organic Light Emitting Diode as claimed in claim 1 is characterized in that, described auxiliary electrical polar region is a through-hole structure.
16. Organic Light Emitting Diode as claimed in claim 1 is characterized in that, described auxiliary electrical polar region is a rectangular groove structure.
17. Organic Light Emitting Diode as claimed in claim 16 is characterized in that, has described rectangular groove structure every between N row pixel electrode district, wherein N is more than or equal to 1.
18. an organic light emitting diode display is characterized in that, described organic light emitting diode display comprises:
One first substrate and a second substrate are oppositely arranged; And
One Organic Light Emitting Diode as claimed in claim 1 is arranged between described first substrate and described second substrate.
19. organic light emitting diode display as claimed in claim 18 is characterized in that, described first substrate and described second substrate one are thin film transistor base plate, and another is colored filter substrate, contact panel or base plate for packaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201110392707.8A CN103137891B (en) | 2011-12-01 | Organic Light Emitting Diode and its organic light emitting diode display formed |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110392707.8A CN103137891B (en) | 2011-12-01 | Organic Light Emitting Diode and its organic light emitting diode display formed |
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| CN103137891A true CN103137891A (en) | 2013-06-05 |
| CN103137891B CN103137891B (en) | 2016-12-14 |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425560A (en) * | 2013-08-30 | 2015-03-18 | 乐金显示有限公司 | Organic light emitting diode display device and method of fabricating the same |
| WO2016078101A1 (en) * | 2014-11-18 | 2016-05-26 | 深圳市华星光电技术有限公司 | Display panel and manufacture method therefor |
| KR20160141318A (en) * | 2015-05-29 | 2016-12-08 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| CN106252525A (en) * | 2016-08-26 | 2016-12-21 | 京东方科技集团股份有限公司 | OLED and manufacture method, display floater and display device |
| EP3125294A1 (en) * | 2015-07-29 | 2017-02-01 | LG Display Co., Ltd. | Organic light emitting display device |
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| CN108933154A (en) * | 2017-05-26 | 2018-12-04 | 京东方科技集团股份有限公司 | Preparation method, display base plate and the display device of organic light-emitting diode display substrate |
| JP2019121599A (en) * | 2017-12-27 | 2019-07-22 | エルジー ディスプレイ カンパニー リミテッド | Organic light-emitting display device |
| WO2021189565A1 (en) * | 2020-03-26 | 2021-09-30 | 武汉华星光电半导体显示技术有限公司 | Display panel, display module and electronic device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1937231A (en) * | 2005-09-22 | 2007-03-28 | 三星电子株式会社 | Display device and fabricating method thereof |
| KR20080059808A (en) * | 2006-12-26 | 2008-07-01 | 엘지디스플레이 주식회사 | Organic light emitting diodes display device and method of manufacturing the same |
| KR20100016880A (en) * | 2008-08-05 | 2010-02-16 | 엘지디스플레이 주식회사 | Light emitting diode display device and method for driving the same |
| CN102184936A (en) * | 2006-01-23 | 2011-09-14 | 三星移动显示器株式会社 | Organic light emitting display and method of fabricating the same |
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1937231A (en) * | 2005-09-22 | 2007-03-28 | 三星电子株式会社 | Display device and fabricating method thereof |
| CN102184936A (en) * | 2006-01-23 | 2011-09-14 | 三星移动显示器株式会社 | Organic light emitting display and method of fabricating the same |
| KR20080059808A (en) * | 2006-12-26 | 2008-07-01 | 엘지디스플레이 주식회사 | Organic light emitting diodes display device and method of manufacturing the same |
| KR20100016880A (en) * | 2008-08-05 | 2010-02-16 | 엘지디스플레이 주식회사 | Light emitting diode display device and method for driving the same |
Cited By (26)
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| WO2016078101A1 (en) * | 2014-11-18 | 2016-05-26 | 深圳市华星光电技术有限公司 | Display panel and manufacture method therefor |
| KR20160141318A (en) * | 2015-05-29 | 2016-12-08 | 엘지디스플레이 주식회사 | Organic light emitting display device |
| KR102555656B1 (en) * | 2015-05-29 | 2023-07-14 | 엘지디스플레이 주식회사 | Organic light emitting display device |
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| CN107799663A (en) * | 2016-08-31 | 2018-03-13 | 乐金显示有限公司 | Organic light-emitting display device with partition wall |
| EP3291301A1 (en) * | 2016-08-31 | 2018-03-07 | LG Display Co., Ltd. | Organic light-emitting display device having a partition wall |
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