CN103137883B - The compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof - Google Patents
The compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof Download PDFInfo
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- CN103137883B CN103137883B CN201110381848.XA CN201110381848A CN103137883B CN 103137883 B CN103137883 B CN 103137883B CN 201110381848 A CN201110381848 A CN 201110381848A CN 103137883 B CN103137883 B CN 103137883B
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Abstract
The invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof. This compound encapsulation structure, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, encapsulated layer includes nitride film, oxidation film successively and is loaded with the PET film of metallic aluminium, and oxidation film is A12O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer. This compound encapsulation structure can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device.
Description
Technical field
The invention belongs to the encapsulation of organic electroluminescence device, be specifically related to compound encapsulation structure and the method for packing thereof of a kind of organic electroluminescence device.
Background technology
Organic electroluminescence device (OLED) is based on a kind of current mode light emitting semiconductor device of organic material. Its typical structure is to accompany multilamellar organic material film (hole injection layer, hole transmission layer, luminescent layer, electron supplying layer and electron injecting layer) between transparent anode and metallic cathode, after applying certain voltage when between electrode, luminescent layer will be luminous. In recent years, organic electroluminescence device owing to cost of manufacture own is low, response time is short, luminosity is high, the feature such as wide viewing angle, low driving voltage and energy-conserving and environment-protective received extensive concern, and has been considered as the device of new generation being most likely at and occupying dominance on the illumination in future and display device market in fields such as total colouring, backlight and illuminations.
At present, there is life-span shorter problem in organic electroluminescence device, it is very loose that this is primarily due to organic material film, occurs rapidly aging after easily being penetrated into by compositions such as the steam in air and oxygen. Therefore, must being packaged before organic electroluminescence device entrance is actually used, the quality of encapsulation is directly connected to the life-span of organic electroluminescence device.
Conventional art adopt glass cover or crown cap are packaged, its edge ultraviolet polymerization resin seal, but the glass cover used in this method or crown cap volume are often relatively big, add the weight of device, and the method may not apply to flexible organic electroluminescence and gives out light the encapsulation of device. At present, introduction is had been reported by SiNXOr SiOXBeing arranged on metal cathode surface etc. inorganic material by methods such as magnetron sputterings, as the encapsulated layer of organic electroluminescence device, but when the high-temperature operation of magnetron sputtering, metal cathode surface is subject to destruction.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing thereof. This compound encapsulation structure can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction. The inventive method is applicable to the organic electroluminescence device that encapsulation is prepared with conducting glass substrate, is also applied for the flexible organic electroluminescent device that encapsulation is prepared for substrate with plastics (such as PET film) or metal. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device.
On the one hand, the invention provides the compound encapsulation structure of a kind of organic electroluminescence device, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, wherein, described encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film of metallic aluminium, and oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer.
Preferably, anode substrate is conducting glass substrate or conducting PET film (high temperature resistance polyester thin film) substrate.
Functional layer generally includes hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer. Luminescent layer is arranged between hole transmission layer and electron transfer layer. Preferably, functional layer and luminescent layer are the method setting of the method by vacuum evaporation or solution coating.
Metallic cathode can be non-transparent metals negative electrode (aluminum, silver, gold etc.), it is also possible to for transparent cathode (dielectric layer/metal level/dielectric layer etc.).
Encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film (PET film) of metallic aluminium.
Nitride film can extend water Oxygen permeation path. Preferably, nitride film is SiN film, Si3N4Film or AlN film. Preferably, nitride film is monolayer, and the thickness of monolayer is 100��150nm. Nitride film can also be two-layer or multilamellar.
Oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg. Ca, Ba, Sr and Mg are high-hydroscopicity material, at Al2O3, BeO and Ga2O3One or more the efficiently reduced steam adulterated in Ca, Ba, Sr and Mg in one or more in the film erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device. Preferably, oxidation film is monolayer, and the thickness of monolayer is 100��150nm. Oxidation film can also be two-layer or multilamellar. One or more doping in Ca, Ba, Sr and Mg in oxidation film can strengthen water and oxygen barrier property. Preferably, in oxidation film, the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
SiO film it is provided with as protective layer between metallic cathode and nitride film. The existence of SiO film can protect metallic cathode to exempt from destruction when the high-temperature operation of follow-up magnetron sputtering. Preferably, the thickness of SiO film is 100��150nm.
Preferably, UV glue is epoxy resin. Preferably, the thickness of UV glue is 1��1.5 ��m.
On the other hand, the invention provides the method for packing of a kind of organic electroluminescence device, comprise the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared;
(2) SiO film is prepared as protective layer by the mode of vacuum evaporation at metal cathode surface;
(3) nitride film is prepared by the mode of magnetron sputtering on SiO film surface;
(4) preparing oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg;
(5) the high temperature resistance polyester thin film of metallic aluminium it is loaded with in the preparation of nitride film surface;
(6) at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film being loaded with metallic aluminium and anode substrate edge-coating UV glue, by the dry curable UV glue of the mode of ultraviolet curing, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
Step (1) is prepare functional layer, luminescent layer and metallic cathode on anode substrate.
Preferably, anode substrate is conducting glass substrate or conducting PET film (high temperature resistance polyester thin film) substrate.
Functional layer generally includes hole injection layer, hole transmission layer, electron transfer layer and electron injecting layer. Luminescent layer is arranged between hole transmission layer and electron transfer layer. Preferably, functional layer and luminescent layer are the method setting of the method by vacuum evaporation or solution coating.
Metallic cathode can be non-transparent metals negative electrode (aluminum, silver, gold etc.), it is also possible to for transparent cathode (dielectric layer/metal level/dielectric layer etc.).
Step (2) is for prepare SiO film as protective layer by the mode of vacuum evaporation at metal cathode surface. The existence of SiO film can protect metallic cathode to exempt from destruction when the high-temperature operation of follow-up magnetron sputtering. Preferably, the thickness of SiO film is 100��150nm.
Step (3) is for prepare nitride film by the mode of magnetron sputtering on SiO film surface. Nitride film can extend water Oxygen permeation path. Preferably, the background vacuum in step (3) magnetron sputtering process is 2 �� 10-4Pa. Preferably, nitride film is SiN film, Si3N4Film or AlN film. Preferably, nitride film is monolayer, and the thickness of monolayer is 100��150nm. Nitride film can also be two-layer or multilamellar.
For to prepare oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al to step (4)2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg. Ca, Ba, Sr and Mg are high-hydroscopicity material, at Al2O3, BeO and Ga2O3In one or more in film, one or more the extended water Oxygen permeation paths in doped metallic elements Ca, Ba, Sr and Mg, efficiently reduce the steam erosion to organic electroluminescence device, significantly increase the life-span of organic electroluminescence device.
Preferably, the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
Preferably, oxidation film is monolayer, and the thickness of monolayer is 100��150nm. Oxidation film can also be two-layer or multilamellar.
Preferably, step (4) is adopt at least one target in Al, Be and Ga to carry out magnetron sputtering with at least one in Ca, Ba, Sr and Mg. Preferably, passing into oxygen and argon in step (4) magnetron sputtering process, oxygen volume content accounts for the 1%��15% of total gas volume. It is highly preferred that step (4) magnetron sputtering process passes into oxygen volume content account for the 8% of total gas volume. Preferably, the background vacuum in step (4) magnetron sputtering process is 2 �� 10-4Pa��
Step (5) is be loaded with the high temperature resistance polyester thin film (PET film) of metallic aluminium in the preparation of nitride film surface.
Step (6) is at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film (PET film) being loaded with metallic aluminium and anode substrate edge-coating UV glue, by the dry curable UV glue of the mode of ultraviolet curing, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
Preferably, UV glue is epoxy resin. Preferably, the thickness of UV glue is 1��1.5 ��m.
Preferably, the light intensity 10��15mW/cm of UV light2, time of exposure 300��400s.
The present invention can pass through repeatedly to repeat step (3) and (4) formation multilayer encapsulation layer, thus reaching excellent packaging effect.
The invention provides the compound encapsulation structure of a kind of organic electroluminescence device and method for packing has the advantages that
(1) compound encapsulation structure of the present invention can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction;
(2) the inventive method is applicable to the organic electroluminescence device that encapsulation is prepared for anode substrate with electro-conductive glass, is also applied for the flexible organic electroluminescent device that encapsulation is prepared for anode substrate with plastics (such as PET film) or metal. The inventive method is particularly suited for encapsulation flexible organic electroluminescent device;
(3) compound encapsulation structure material of the present invention is cheap, and method for packing technique is simple, and prepared by easy large area, be suitable to industrialization large-scale use.
Accompanying drawing explanation
Fig. 1 is the structural representation of the compound encapsulation structure of the embodiment of the present invention 1 organic electroluminescence device;
Fig. 2 is the life time decay curve chart of the compound encapsulation structure of the embodiment of the present invention 9��11 organic electroluminescence device.
Detailed description of the invention
The following stated is the preferred embodiment of the present invention. It should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention, it is also possible to make some improvement and adjustment, these improve and adjustment is also considered as in protection scope of the present invention.
Embodiment 1:
Fig. 1 is the structural representation of the compound encapsulation structure of the present embodiment organic electroluminescence device.
A kind of compound encapsulation structure of organic electroluminescence device, as it is shown in figure 1, include conducting PET film (high temperature resistance polyester thin film) substrate 1, hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6, metallic cathode 7 and encapsulated layer 8 successively. Conducting PET film (high temperature resistance polyester thin film) substrate 1 and encapsulated layer 8 form a closing space by epoxy sealing, and hole injection layer 2, hole transmission layer 3, luminescent layer 4, electron transfer layer 5, electron injecting layer 6 and metallic cathode 7 are contained in this closing space. Described encapsulated layer 8 includes SiO film 81 that a layer thickness is 100nm successively, a layer thickness is that (oxidation film is the Al doped with Ca, Mg and Sr for 82, one layer of oxidation film of SiN film 83 of 150nm2O3Film, oxidation film gross mass be 0.8g, Ca, Mg and Sr quality account for the 9% of oxidation film gross mass, 6% and 9% respectively, oxide film thickness is 100nm) and be loaded with the PET film 84 of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.8E-4��
Embodiment 2:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the Si of 150nm3N4Film, (oxidation film is the Al doped with Ca and Mg to one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1g, Ca and Mg accounts for the 18% and 10% of oxidation film gross mass respectively, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.8E-4��
Embodiment 3:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the AlN film of 150nm, (oxidation film is the Ga of doping Ca for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1.2g, Ca accounts for the 35% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.3E-4��
Embodiment 4:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the BeO film of doping Ca for one layer of oxidation film 83, oxidation film gross mass is 1.0g, the quality of Ca accounts for the 20% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.5E-4��
Embodiment 5:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the Al of doping Ba for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 0.9g, Ba accounts for the 25% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.9E-4��
Embodiment 6:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film, the three layers Si that a layer thickness is 150nm successively3N4Film (Si3N4The thickness in monolayer of film is 100nm), (oxidation film is the Al of doping Sr for one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 0.8g, Sr accounts for the 22% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.6E-4��
Embodiment 7:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, (respectively thickness in monolayer is the SiN film of 100nm, Si to three layers nitride film3N4Film and AlN film), (oxidation film is the Al doped with Mg to one layer of oxidation film 832O3Film, the quality that oxidation film gross mass is 1.1g, Mg accounts for the 27% of oxidation film gross mass, and oxide film thickness is 100nm) and it is loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 5.7E-4��
Embodiment 8:
The compound encapsulation structure of a kind of organic electroluminescence device, including conducting glass substrate, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, metallic cathode and encapsulated layer. Conducting glass substrate and encapsulated layer form a closing space by epoxy sealing, and hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and metallic cathode are contained in this closing space. Described encapsulated layer includes SiO film that a layer thickness is 150nm successively, a layer thickness is the SiN film of 150nm, (oxidation film is the Al of doping Ca, Ba, Sr and Mg for one layer of oxidation film 832O3Film, Ca, Ba, Sr and Mg quality account for the 7% of oxidation film gross mass, 10%, 5% and 8% respectively, oxide film thickness is 100nm) and be loaded with the PET film of metallic aluminium. The thickness of epoxy resin is 1 ��m. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 1.4E-4��
Embodiment 9:
The method for packing of a kind of organic electroluminescence device, comprises the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared
A. the pre-treatment of conducting glass substrate
Take ito glass substrate, be sequentially carried out liquid detergent cleaning, ethanol purge, acetone cleans and pure water cleans, it is used that ultrasonic washing unit is carried out, washing adopts and cleans 5 minutes every time, stops 5 minutes, the method repeating 3 times respectively, then stand-by by oven for drying again, also need to carry out surface activation process to the ito glass substrate after cleaning, to increase the oxygen content of ito glass substrate surface layer, improve the work function on ito glass substrate surface; ITO thickness 100nm;
B. the preparation of functional layer, luminescent layer and metallic cathode
The method of vacuum evaporation or the method for solution coating is adopted to sequentially form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer on ito glass substrate; Evaporation is adopted to make aluminum negative electrode;
(2) having the SiO film of one layer of 100nm as protective layer by the mode of vacuum evaporation in metal cathode surface preparation, vacuum degree control is 5 �� 10-5Pa, evaporation rate is
(3) on SiO film surface, utilize Si target by the mode of magnetron sputtering, pass into Ar and N2, N2Proportion is 8%, prepares one layer of Si3N4Film, thickness 100nm, the background vacuum in magnetron sputtering process is 2 �� 10-4Pa;
(4) by the mode of magnetron sputtering at Si3N4Utilizing Al target and Ca target on film surface, magnetron sputtering makes, and passes into gas O2And Ar, O2Content 8%, background vacuum 2 �� 10-4Pa, prepares one layer of Al doped with Ca2O3Film, thickness 100nm, Ca account for the 35% of oxidation film gross mass;
(5) at the Al doped with Ca2O3The preparation of film surface is loaded with the PET film of metallic aluminium;
(6) at SiO film, Si3N4Film, Al doped with Ca2O3Film, the PET film being loaded with metallic aluminium and ito glass substrate edge-coating epoxy resin, (thickness 1 ��m), by the dry hardening epoxy resin of the mode of ultraviolet curing (UV-Curing), then solidify with UV light (��=365nm), light intensity 11mW/cm2, time of exposure 300s, seal and form a closing space, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and aluminum negative electrode are contained in this closing space. Water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 2.9E-4��
Embodiment 10:Ca accounts for the 27% of oxidation film gross mass, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.1E-4��
Embodiment 11:Ca accounts for the 20% of oxidation film gross mass, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 5.2E-4��
Embodiment 12: step (3) repeats 2 times, step (4) repeats 2 times, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 3.1E-4��
Embodiment 13: step (3) repeats 3 times, step (4) repeats 3 times, and other is with embodiment 9, water oxygen permeability (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package2Day) for 4.2E-4��
Effect example
Beneficial effect for the compound encapsulation structure of valid certificates organic electroluminescence device of the present invention and method for packing thereof, it is provided that relevant experimental data is as follows.
Table 1. embodiment 9��11 compound encapsulation structure life time decay situation
Table 1 is embodiment 9��11 compound encapsulation structure life time decay situation. Fig. 2 is embodiment 9��11 compound encapsulation structure life time decay curve chart.
The starting brightness of the organic electroluminescence device from table 1 and Fig. 2 it can be seen that after composite package of the present invention is 1,000cd/m2Under, the life-span reaches more than 10,000 hours.
The water oxygen permeability (WVTR) of the organic electroluminescence device from above-mentioned experimental data it can be seen that after composite package of the present invention reaches 10-4g/m2��day��
To sum up, the compound encapsulation structure of organic electroluminescence device provided by the invention can efficiently reduce the steam erosion to organic electroluminescence device, significantly increases the life-span of organic electroluminescence device, and metallic cathode can be protected to exempt from destruction.
Claims (10)
1. the compound encapsulation structure of an organic electroluminescence device, including anode substrate, functional layer, luminescent layer, metallic cathode and encapsulated layer, anode substrate and encapsulated layer form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space, it is characterized in that, described encapsulated layer includes nitride film, oxidation film successively and is loaded with the high temperature resistance polyester thin film of metallic aluminium, and oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg, between metallic cathode and nitride film, be provided with SiO film as protective layer.
2. compound encapsulation structure as claimed in claim 1, it is characterised in that described nitride film is SiN film, Si3N4Film or AlN film.
3. compound encapsulation structure as claimed in claim 1, it is characterised in that the thickness of described SiO film is 100��150nm.
4. compound encapsulation structure as claimed in claim 1, it is characterised in that the quality of described doped metallic elements accounts for the 20��35% of oxidation film gross mass.
5. compound encapsulation structure as claimed in claim 1, it is characterised in that described oxidation film is monolayer, and the thickness of monolayer is 100��150nm.
6. the method for packing of an organic electroluminescence device, it is characterised in that comprise the following steps:
(1) on anode substrate, functional layer, luminescent layer and metallic cathode are prepared;
(2) SiO film is prepared as protective layer by the mode of vacuum evaporation at metal cathode surface;
(3) nitride film is prepared by the mode of magnetron sputtering on SiO film surface;
(4) preparing oxidation film by the mode of magnetron sputtering on nitride film surface, oxidation film is Al2O3, BeO and Ga2O3In film one or more and doped with the film of one or more formation in metallic element Ca, Ba, Sr and Mg;
(5) the high temperature resistance polyester thin film of metallic aluminium it is loaded with in the preparation of nitride film surface;
(6) at SiO film, nitride film, oxidation film, the high temperature resistance polyester thin film being loaded with metallic aluminium and anode substrate edge-coating UV glue, then solidify with UV light, seal and form a closing space, functional layer, luminescent layer and metallic cathode are contained in this closing space.
7. method for packing as claimed in claim 6, it is characterised in that described in step (2), the thickness of SiO film is 100��150nm.
8. method for packing as claimed in claim 6, it is characterised in that nitride film described in step (3) is SiN film, Si3N4Film or AlN film.
9. method for packing as claimed in claim 6, it is characterised in that described in step (4), the quality of doped metallic elements accounts for the 20��35% of oxidation film gross mass.
10. method for packing as claimed in claim 6, it is characterised in that oxidation film described in step (4) is monolayer, and the thickness of monolayer is 100��150nm.
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| US7589885B2 (en) * | 2006-09-22 | 2009-09-15 | Angstrom, Inc. | Micromirror array device comprising encapsulated reflective metal layer and method of making the same |
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| CN101518151A (en) * | 2006-11-06 | 2009-08-26 | 新加坡科技研究局 | Nano particle encapsulated barrier lamination |
| CN101080121A (en) * | 2007-07-06 | 2007-11-28 | 清华大学 | An organic EL part and its making method |
| CN102077686A (en) * | 2009-06-29 | 2011-05-25 | 富士电机控股株式会社 | Sealing film for organic EL element, organic EL element, and organic EL display |
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