CN103137822A - Ultraviolet light-emitting diode structure - Google Patents
Ultraviolet light-emitting diode structure Download PDFInfo
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Abstract
An ultraviolet light-emitting diode structure comprises a substrate, a N-shaped AlGaN layer, a AlGaN quantum well, a P-shaped AlGaN layer, a P-shaped GaN layer, a top electrode, a bottom electrode and a metal layer, wherein the N-shaped AlGaN layer is arranged on the substrate, a platform surface is arranged on one side of the upper surface of the N-shaped AlGaN layer, the AlGaN quantum well is arranged on one side, without the platform surface, of the upper surface of the N-shaped AlGaN layer, the P-shaped AlGaN layer is arranged on the AlGaN quantum well, the P-shaped GaN layer is arranged on the P-shaped AlGaN layer, the top electrode is arranged on the P-shaped GaN layer, the bottom electrode is arranged on the platform surface located on the side of the N-shaped AlGaN layer, and the metal layer is arranged on the back surface of the substrate. According to the ultraviolet light-emitting diode structure, a plasmon technology is adopted to improve luminous efficiency and internal quantum efficiency.
Description
Technical field
The present invention relates to a kind of opto-electronic device, relate in particular to a kind of ultraviolet light-emitting diode (UV-LED) structure.
Background technology
UV-LED has huge potential using value to be subject to extensive concern because of it in many applications such as excited white light, biochemical detection, sterilizing, environment purification, polymer cure and short distance safety communications.Compare with traditional ultraviolet source mercury lamp, AlGaN base UV-LED has long-life, low-voltage, wavelength is adjustable, environmental protection, good directionality, switch rapidly, the many merits such as shatter-proof moisture resistance, light and flexible, along with going deep into of research, will become the main flow of following new application.
But compare with GaN base blue-ray LED, at present the luminous power of UV-LED and efficient also far can not make us satisfied.Wherein one of reason is the epitaxial growth difficulty of the material of high-quality high Al contents AlGaN, and generally speaking, the Al component is higher, and crystal mass is lower, and dislocation density is generally 10
9/ cm
-2-10
10/ cm
-2And even higher.At present, metal phasmon technology successfully has been used for improving the luminous efficiency of visible LED.Phasmon metal commonly used comprises Ag, Au etc., the phasmon energy of these metals all is positioned at the visible region, can't be used for improving the luminous efficiency of ultraviolet band LED, therefore, it has been generally acknowledged that the phasmon technology is not is a kind of particularly effective ways of deep ultraviolet wave band LED luminous efficiency of ultraviolet band that effectively can improve.Yet, recently, list of references 1 (Gao N, Huang K, Li J, Li S, Yang X, v.2:816) Kang J.Surface-plasmon-enhanced deep-UV light emitting diodes based on AlG aN multi-quantum wells Sci.Rep.2012 has reported that employing Al metallic film can improve the luminous efficiency of UV-LED, from experimentally having confirmed to adopt the metal material with high body phasmon, can effectively improve the luminous efficiency of UV-LED.Fig. 1 is the device architecture 100 of the UV-LED of prior art, and it comprises Sapphire Substrate 101, AlN resilient coating 102, N-type AlGaN film 103, AlGaN quantum well 104, P type AlGaN film 105, P type GaN film 106, Al film 107, top electrode 108 and hearth electrode 109.The inventor thinks, due to the thickness thicker (100nm) of P type GaN, much larger than the coupling distance of metal and quantum well, thus the author with the raising of luminous intensity owing to the raising of metal phasmon to the device external quantum efficiency.The photon of launching from the active area 104 of device can be transmitted into the device outside from three directions, and the first, see through successively N-type AlGaNl03, AlN resilient coating 102 and Sapphire Substrate 101, penetrate from the device bottom.The second, GaNl06 penetrates from top device by the P type.The 3rd, penetrate from the side of device.Improved by the phasmon technology in document and penetrated the light extraction efficiency of part light by P type GaNl06 from top device.Wherein, first is luminous is the luminous chief component of UV-LED, and second portion luminous be the luminous less important part of UV-LED.This is because the ultraviolet light that P type GaN film 106 can be launched AlGaN quantum well 104 has strong absorption.In list of references 1, adopt the phasmon technology to improve the light extraction efficiency of second portion luminous (namely seeing through the ultraviolet ray of P type GaN).
Because flip-chip bonded structure has good current distribution characteristic and good heat dissipation characteristics, become the device architecture of a kind of main flow of UV-LED device.In the present invention, we will propose a series of UV-LED device architecture based on flip-chip bonded structure, adopt the phasmon technology to improve the light extraction efficiency of prevailing first luminous (namely seeing through successively N-type AlGaNl03, AlN resilient coating 102 and Sapphire Substrate 101, from device bottom ejaculation).We also will propose the UV-LED device architecture in addition, adopt the phasmon technology to improve the internal quantum efficiency of AlGaN quantum well 103.
Summary of the invention
The object of the invention is to, a kind of ultraviolet light-emitting diode structure is provided, adopt the phasmon technology to improve light extraction efficiency and internal quantum efficiency.
The invention provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate;
One N-type AlGaN layer, it is produced in substrate, and the side above this N-type AlGaN layer has a table top;
One AlGaN quantum well, its be produced on N-type AlGaN layer do not have table top one side above;
One P type AlGaN layer, it is produced on the AlGaN quantum well;
One P type GaN layer, it is produced on P type AlGaN layer;
One top electrode, it is produced on P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer one side;
One metal level, it is produced on the back side of substrate.
The present invention also provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate, this substrate are divided into three sections;
One N-type AlGaN layer, it is produced in the substrate that is divided into three sections, is formed with two grooves below this N-type AlGaN layer, and the side above this N-type AlGaN layer has a table top;
One AlGaN quantum well, its be produced on N-type AlGaN layer do not have table top one side above;
One P type AlGaN layer, it is produced on the AlGaN quantum well;
One P type GaN layer, it is produced on P type AlGaN layer;
One top electrode, it is produced on P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer one side;
One metal level, it is produced on the back side of the interior N-type AlGaN layer of two grooves that form below of N-type AlGaN layer.
Description of drawings
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the structural representation of prior art;
Fig. 2 is the structural representation of first embodiment of the invention;
Fig. 3 is the structural representation of second embodiment of the invention;
Fig. 4 is the structural representation of third embodiment of the invention;
Fig. 5 is the structural representation of fourth embodiment of the invention;
Fig. 6 is the structural representation of fifth embodiment of the invention;
Fig. 7 is the structural representation of sixth embodiment of the invention.
Embodiment
The first embodiment
See also shown in Figure 2ly, the invention provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate A, this substrate A comprise a Sapphire Substrate 21 and making AlN resilient coating 22 thereon; Resilient coating 22 thickness shown in it are approximately between 500 nanometers-6 micron, and wherein said resilient coating 22 also can be other materials such as AlInN
One N-type AlGaN layer 23, it is produced on substrate A, and the side above this N-type AlGaN layer 23 has a table top 231, and wherein the thickness of N-type AlGaN layer 23 is approximately about the 1-4 micron;
One AlGaN quantum well 24, its be produced on N-type AlGaN layer 23 do not have table top 231 1 sides above, the AlGaN quantum well is approximately 4-10 cycle;
One P type AlGaN layer 25, it is produced on AlGaN quantum well 24, and wherein the thickness of P type AlGaN layer is approximately the 20-60 nanometer;
One P type GaN layer 26, it is produced on P type AlGaN layer 25, and wherein the thickness of P type GaN layer is approximately the 100-300 nanometer;
One top electrode 27, it is produced on P type GaN layer 26, and wherein top electrode 27 materials can be Ni/Au etc., and thickness is approximately 10100 nanometers;
One hearth electrode 28, it is produced on the table top 231 of N-type AlGaN layer 23 1 side, and wherein hearth electrode 28 materials can be Ti/Al/Ti/Au etc., and thickness is approximately the 150-1000 nanometer;
One metal level 29, it is produced on the back side of substrate A, and described metal level 29 is bonding jumper or metallic particles.
The second embodiment
See also shown in Figure 3ly, the present embodiment and the first embodiment are basic identical, and difference is, described this substrate A is a resilient coating 22, and in addition, the Sapphire Substrate that is used for growing AIN resilient coating 22 is removed by means such as laser lift-offs.
The 3rd embodiment
See also shown in Figure 4ly, the present embodiment and the first embodiment are basic identical, and difference is, described metal level 29 is produced in P type AlGaN layer 25, and metal level is conducive to improve internal quantum efficiency near quantum well.
The 4th embodiment
See also shown in Figure 5ly, the present embodiment and the first embodiment are basic identical, and difference is, described metal level 29 is produced in N-type AlGaN layer 23, and metal level is conducive to improve internal quantum efficiency near quantum well.
The 5th embodiment
See also shown in Figure 6ly, the invention provides a kind of ultraviolet light-emitting diode structure, comprising:
One substrate A, this substrate A is divided into three sections, and this substrate A substrate A comprises a Sapphire Substrate 21 and making AlN resilient coating 22 thereon;
One N-type AlGaN layer 23, it is produced on the substrate A that is divided into three sections, is formed with two grooves 232 below this N-type AlGaN layer 23, and the sides above this N-type AlGaN layer 23 have a table top 231;
One AlGaN quantum well 24, its be produced on N-type AlGaN layer 23 do not have table top 231 1 sides above;
One P type AlGaN layer 25, it is produced on AlGaN quantum well 24;
One P type GaN layer 26, it is produced on P type AlGaN layer 25;
One top electrode 27, it is produced on P type GaN layer 26;
One hearth electrode 28, it is produced on the table top 231 of N-type AlGaN layer 23 1 side;
One metal level 29, it is produced on the back side of two interior N-type AlGaN layers 23 of groove 232 that form below of N-type AlGaN layer 23, and described metal level 29 is bonding jumper or metallic particles.
The 6th embodiment
See also shown in Figure 7ly, this present embodiment and the 5th embodiment are basic identical, and difference is, this substrate A is a resilient coating 22, and in addition, the Sapphire Substrate that is used for the growing AIN resilient coating is removed by means such as laser lift-offs.
The above is only better possible embodiments of the present invention, and is non-so namely limit to the scope of the claims of the present invention, and the equivalent structure that every utilization specification of the present invention and accompanying drawing content are done changes, and all reason is with being contained in claim scope of the present invention.
Claims (10)
1. ultraviolet light-emitting diode structure comprises:
One substrate;
One N-type AlGaN layer, it is produced in substrate, and the side above this N-type AlGaN layer has a table top;
One AlGaN quantum well, its be produced on N-type AlGaN layer do not have table top one side above;
One P type AlGaN layer, it is produced on the AlGaN quantum well;
One P type GaN layer, it is produced on P type AlGaN layer;
One top electrode, it is produced on P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer one side;
One metal level, it is produced on the back side of substrate.
2. ultraviolet light-emitting diode structure according to claim 1, wherein this substrate is a resilient coating.
3. ultraviolet light-emitting diode structure according to claim 1, wherein this substrate comprises a Sapphire Substrate and makes the AlN resilient coating of making thereon.
4. ultraviolet light-emitting diode structure according to claim 1, wherein said metal level is bonding jumper or metallic particles.
5. ultraviolet light-emitting diode structure according to claim 4, wherein said metal level is produced in P type AlGaN layer.
6. ultraviolet light-emitting diode structure according to claim 4, wherein said metal level is produced in N-type AlGaN layer.
7. ultraviolet light-emitting diode structure comprises:
One substrate, this substrate are divided into three sections;
One N-type AlGaN layer, it is produced in the substrate that is divided into three sections, is formed with two grooves below this N-type AlGaN layer, and the side above this N-type AlGaN layer has a table top;
One AlGaN quantum well, its be produced on N-type AlGaN layer do not have table top one side above;
One P type AlGaN layer, it is produced on the AlGaN quantum well;
One P type GaN layer, it is produced on P type AlGaN layer;
One top electrode, it is produced on P type GaN layer;
One hearth electrode, it is produced on the table top of N-type AlGaN layer one side;
One metal level, it is produced on the back side of the interior N-type AlGaN layer of two grooves that form below of N-type AlGaN layer.
8. ultraviolet light-emitting diode structure according to claim 7, wherein this substrate is a resilient coating.
9. ultraviolet light-emitting diode structure according to claim 7, wherein this substrate comprises a Sapphire Substrate and makes thereon AlN resilient coating.
10. ultraviolet light-emitting diode structure according to claim 7, wherein said metal level is bonding jumper or metallic particles.
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|---|---|---|---|
| CN201310057268.4A CN103137822B (en) | 2013-02-22 | 2013-02-22 | Ultraviolet light-emitting diode structure |
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| CN201310057268.4A CN103137822B (en) | 2013-02-22 | 2013-02-22 | Ultraviolet light-emitting diode structure |
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| CN103137822A true CN103137822A (en) | 2013-06-05 |
| CN103137822B CN103137822B (en) | 2015-07-15 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058002A (en) * | 2016-06-15 | 2016-10-26 | 青岛杰生电气有限公司 | Ultraviolet light-emitting device |
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
| CN111710765A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Method for improving light extraction efficiency of LED flip chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683506A (en) * | 2011-03-10 | 2012-09-19 | 中国科学院物理研究所 | Nano-structure layer for gallium-nitride-based (GaN-based) light emitting diode (LED) epitaxial slice and preparation method thereof |
-
2013
- 2013-02-22 CN CN201310057268.4A patent/CN103137822B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106058002A (en) * | 2016-06-15 | 2016-10-26 | 青岛杰生电气有限公司 | Ultraviolet light-emitting device |
| CN106058002B (en) * | 2016-06-15 | 2018-11-09 | 青岛杰生电气有限公司 | A kind of ultra-violet light-emitting device |
| CN110993754A (en) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | LED tube core with bionic metal nano island-shaped structure and preparation method thereof |
| CN111710765A (en) * | 2020-06-28 | 2020-09-25 | 中国科学院半导体研究所 | Method for improving light extraction efficiency of LED flip chip |
| CN111710765B (en) * | 2020-06-28 | 2021-05-18 | 中国科学院半导体研究所 | Method for improving light extraction efficiency of LED flip chip |
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| CN103137822B (en) | 2015-07-15 |
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Effective date of registration: 20210303 Address after: 046011 Zhangze new industrial park, Changzhi high tech Zone, Changzhi City, Shanxi Province Patentee after: SHANXI ZHONGKE ADVANCED ULTRAVIOLET OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences |
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