CN103137766B - Triple-junction monolithic solar cell and preparation method thereof - Google Patents
Triple-junction monolithic solar cell and preparation method thereof Download PDFInfo
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- CN103137766B CN103137766B CN201310082858.2A CN201310082858A CN103137766B CN 103137766 B CN103137766 B CN 103137766B CN 201310082858 A CN201310082858 A CN 201310082858A CN 103137766 B CN103137766 B CN 103137766B
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- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention provides a kind of triple-junction monolithic solar cell, comprise battery at the bottom of the GaNAsBi connected successively on gaas substrates, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction and AlGaAs and push up battery, described AlGaAs pushes up on battery and described GaAs substrate and is respectively equipped with electrode.The all sub-battery lattice constants of the present invention are mated with GaAs substrate, and reduce production cost, preparation technology is simple.Band gap is combined as ~ 1.93eV, ~ 1.39eV, ~ 0.94eV, has higher open circuit voltage, reduces the heat-energy losses in photoelectric conversion process, improves battery efficiency.Adopt the growth of formal dress growing method, avoid the complicated technology be inverted growth battery structure and needed first to remove again with other support substrates material binds GaAs substrate, reduce the manufacture difficulty of battery.
Description
Technical field
The present invention relates to solar cell field, particularly relate to a kind of GaAs base triple-junction monolithic solar cell containing bismuthide and preparation method thereof, this three-junction solar battery has optimizes the combination of with gap, can realize making full use of solar spectrum, have higher battery efficiency.
Background technology
In the development process of Ⅲ-Ⅴ compound semiconductor solar cell, in order to improve the conversion efficiency of battery, needing to divide solar spectrum, adopting the sub-battery of different band gap widths matched with it to connect, to reach the object making full use of sunlight.In three-junction solar battery, the comparatively ripe system of current research is GaInP/GaAs/Ge (1.9/1.42/0.7eV) three junction battery of lattice-matched growth, but the combination of this system with gap is not optimized, its most high conversion efficiency is 32-33% (sun).Calculate and show that the efficiency of the three-junction solar battery with the combination of 1.93eV/1.39eV/0.94eV with gap is greater than 51% (100 times of optically focused), but because lattice constant is to the restriction of material, there is this desirable with gap combination and the Material selec-tion mated with substrate lattice is less, a kind of material that can realize the combination of this with gap is AlInAs/InGaAsP/InGaAs, but the lattice constant of this material and GaAs substrate have an appointment 2.1% mismatch, still lack at present and combine the substrate of lattice constant match with above-mentioned material.
In order to obtain the AlInAs/InGaAsP/InGaAs material of 1.93eV/1.39eV/0.94eV with gap combination, a kind of common method utilizes lattice mutation technology to grow the lattice varied buffer layer with its lattice mismatch on gaas substrates, but this technology adds production cost, and growing technology is had higher requirement, the introducing of simultaneous buffering layer also brings more defect, have impact on the performance of battery.
How to realize the combination of multijunction solar cell rational band gap, reduce current mismatch simultaneously and don't improve battery cost of manufacture and difficulty becomes the problem that solution needed badly by current solar cell.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of triple-junction monolithic solar cell and preparation method thereof, solves in prior art and can increase the cost of manufacture of battery and the problem of complex manufacturing technology degree to obtain high-efficiency three-joint battery.
In order to solve the problem, the invention provides a kind of triple-junction monolithic solar cell, the two knot batteries comprising GaAs substrate and adopt GaNAsBi material to make, the lattice constant of described two knot batteries is all mated with described GaAs substrate lattice.
Further, described two knot batteries are respectively battery at the bottom of GaNAsBi and GaNAsBi intermediate cell, described solar cell comprises battery at the bottom of the GaNAsBi connected successively on gaas substrates, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction and AlGaAs and pushes up battery, and described AlGaAs pushes up on battery and described GaAs substrate and is respectively equipped with electrode.
Further, in battery at the bottom of described GaNAsBi, the component of N is the component of 1.45%, Bi is 2.56%, and at the bottom of described GaNAsBi, the band gap width of battery is about 0.94 eV.
Further, in described GaNAsBi intermediate cell, the component of N is the component of 0.058%, Bi is 0.1%, and the band gap width of described GaNAsBi intermediate cell is about 1.39 eV.
Further, the component that described AlGaAs pushes up Al in battery is 40.6%, and the band gap width that described AlGaAs pushes up battery is about 1.93 eV.
Further, the band gap of described solar cell is combined as 1.93 eV, ~ 1.39 eV, ~ 0.94eV.
In order to solve the problem, the present invention has also put forward a kind of preparation method of triple-junction monolithic solar cell of the present invention, comprises step: 1) battery, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction, AlGaAs at the bottom of growing GaN AsBi push up battery and ohmic contact layer successively on gaas substrates; 2) on described AlGaAs top battery and described GaAs substrate, prepare upper and lower electrode respectively, obtain target solar cell.
Further, described triple-junction monolithic solar cell extension adopts mocvd method or the growth of MBE method to be formed.
Triple-junction monolithic solar cell provided by the invention and preparation method thereof, advantage is:
1. there is desirable band gap combination: ~ 1.93 eV, ~ 1.39 eV, ~ 0.94eV, have higher open circuit voltage, the currents match of each sub-battery, reduce the heat-energy losses in photoelectric conversion process, improve battery efficiency.
2. all sub-battery lattice constants are mated with GaAs substrate, and avoid in lattice mutation technology and require to grow thicker resilient coating to the waste of material, reduce production cost, preparation technology is simple.
3. adopt the growth of formal dress growing method, avoid the complicated technology be inverted growth battery structure and needed first to remove again with other support substrates material binds GaAs substrate, reduce the manufacture difficulty of battery.
Accompanying drawing explanation
Figure 1 shows that the structural representation that the triple-junction monolithic solar cell that the embodiment of the invention provides adopts formal dress mode to grow;
Fig. 2 is the structural representation of the triple-junction monolithic solar cell manufactured goods shown in Fig. 1;
Figure 3 shows that preparation method's flow chart of steps of the triple-junction monolithic solar cell that the embodiment of the invention provides.
Embodiment
Below in conjunction with accompanying drawing, triple-junction monolithic solar cell provided by the invention and preparation method thereof is elaborated.
First the embodiment of triple-junction monolithic solar cell of the present invention is provided by reference to the accompanying drawings.
With reference to shown in accompanying drawing 1,2, wherein, Fig. 1 is the structural representation that the triple-junction monolithic solar cell that provides of this embodiment adopts formal dress mode and grows, and Fig. 2 is the structural representation of the triple-junction monolithic solar cell manufactured goods shown in Fig. 1, next elaborates to the structure shown in accompanying drawing 1,2.
In the research to GaAs material, find that N's and Bi mixes the bandwidth sum lattice constant that can regulate material, therefore by selecting the component of suitable N and Bi that GaNAsBi quaternary material can be made to have the suitable lattice constant of desirable bandwidth sum, the ideal material of this sub-battery of narrow band gap GaNAsBi material being become mate with GaAs substrate.
This embodiment provides a kind of triple-junction monolithic solar cell, wherein two knot batteries adopt GaNAsBi material to be made, the lattice constant of all sub-batteries is all mated with the GaAs substrate of solar cell, making full use of solar spectrum can be realized, obtain higher open circuit voltage, reduce current mismatch.
Described in this embodiment, two knot batteries are respectively battery 17 at the bottom of GaNAsBi and GaNAsBi intermediate cell 15.Described solar cell is included in battery 17, first tunnel junction 16, GaNAsBi intermediate cell 15, second tunnel junction 14 and AlGaAs at the bottom of the GaNAsBi that GaAs substrate 18 connects successively and pushes up battery 13, and described AlGaAs pushes up on battery 13 and described GaAs substrate 18 and is respectively equipped with electrode (as shown in Fig. 2 electrode 12,19).The band gap of described triple-junction monolithic solar cell is combined as ~ 1.93 eV, ~ 1.39 eV, ~ 0.94eV, has higher open circuit voltage, the currents match of each sub-battery, reduces the heat-energy losses in photoelectric conversion process, improve battery efficiency.
At the bottom of described GaNAsBi, the lattice constant of battery 17 is mated with GaAs substrate 18.Battery 17 at the bottom of described GaNAsBi comprises successively according to the battery base, the end 01 that the material arranged away from GaAs substrate 18 direction is gradually GaNAsBi, and the material arranged on base 01 is the battery emitter region, the end 02 of GaNAsBi.Wherein, in battery 17 at the bottom of described GaNAsBi, the component of N and Bi is about 1.45%, 2.56% respectively, and its band gap width is about 0.94 eV.
Described first tunnel junction 16 comprises successively according to the GaInP arranged away from GaAs substrate 18 direction gradually or the heavily doped layer of (In) GaAs 03 and the heavily doped layer 04 of (Al) GaAs.Wherein, (In) GaAs represents InGaAs or GaAs, and (Al) GaAs represents AlGaAs or GaAs.
The lattice constant of described GaNAsBi intermediate cell 15 is mated with GaAs substrate 18.Described GaNAsBi intermediate cell 15 comprises successively according to the intermediate cell base 05 that the material arranged away from GaAs substrate 18 direction is gradually GaNAsBi, and the material arranged on base 05 is the intermediate cell emitter region 06 of GaNAsBi.Wherein, in described GaNAsBi intermediate cell 15, the component of N and Bi is about 0.058%, 0.1% respectively, and its band gap width is about 1.39 eV.
Described second tunnel junction 14 comprises successively according to the heavily doped layer of GaInP 07 arranged away from GaAs substrate 18 direction gradually and the heavily doped layer 08 of AlGaAs.
Described AlGaAs pushes up battery 13 and comprises successively according to the AlGaAs base 09 arranged away from GaAs substrate 18 direction gradually and AlGaAs emitter region 10.
In this embodiment, push up on battery 13 at AlGaAs and be also provided with GaAs layer as ohmic contact layer 11, its doping type is N-type.
Described triple-junction monolithic solar cell pushes up on battery 13 and GaAs substrate 18 at described AlGaAs and is respectively equipped with electrode.In this embodiment, AlGaAs pushes up battery 13 and is provided with electrode 16, and electrode 16 is positioned at ohmic contact layer 11 upper surface; GaAs substrate 18 is provided with electrode 25, and electrode 25 is positioned at the back side of GaAs substrate 18, thus the solar cell needed for obtaining.
The all sub-battery lattices of triple-junction monolithic solar cell provided by the invention mate with GaAs substrate, and avoid in lattice mutation technology and require to grow thicker resilient coating to the waste of material, reduce production cost, preparation technology is simple.And the band gap of described triple-junction monolithic solar cell is combined as ~ 1.93 eV, ~ 1.39 eV, ~ 0.94eV, there is higher open circuit voltage, the currents match of each sub-battery, reduce the heat-energy losses in photoelectric conversion process, can making full use of solar spectrum be realized, improve battery efficiency.
Next the embodiment of triple-junction monolithic solar cell preparation method of the present invention is provided by reference to the accompanying drawings.
With reference to accompanying drawing 3, the flow chart of the triple-junction monolithic solar cell preparation method that this embodiment provides, next elaborates to the step shown in accompanying drawing 3.
Step S301, at the bottom of growing GaN AsBi, battery, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction, AlGaAs push up battery and ohmic contact layer successively on gaas substrates.
Battery at the bottom of growing GaN AsBi on gaas substrates, battery at the bottom of described GaNAsBi is the battery base, the end of GaNAsBi successively according to the material gradually away from the growth of GaAs substrate direction, and the material grown on base is the battery emitter region, the end of GaNAsBi.Wherein, in battery at the bottom of described GaNAsBi, the component of N and Bi is about 1.45%, 2.56% respectively, and its band gap width is about 0.94 eV.
Battery at the bottom of GaNAsBi grows the first tunnel junction, described first tunnel junction comprises successively according to the GaInP arranged away from GaAs substrate direction gradually or the heavily doped layer of (In) GaAs and the heavily doped layer of (Al) GaAs.
In the first tunnel junctions growing GaN AsBi intermediate cell, described GaNAsBi intermediate cell comprises successively according to the intermediate cell base that the material arranged away from GaAs substrate direction is gradually GaNAsBi, and the material arranged on base is the intermediate cell emitter region of GaNAsBi.Wherein, in described GaNAsBi intermediate cell, the component of N and Bi is about 0.058%, 0.1% respectively, and its band gap width is about 1.39 eV.
GaNAsBi intermediate cell grows the second tunnel junction, and described second tunnel junction comprises successively according to the heavily doped layer of GaInP arranged away from GaAs substrate direction gradually and the heavily doped layer of AlGaAs.
Push up battery at the second tunnel junctions growth AlGaAs, described AlGaAs pushes up power brick and contains successively according to the AlGaAs base arranged away from GaAs substrate direction gradually and AlGaAs emitter region.
In this embodiment, push up on battery at AlGaAs and also grow GaAs layer as ohmic contact layer, its doping type is N-type.
Step S302, pushes up on battery and described GaAs substrate at described AlGaAs respectively and prepares upper and lower electrode, obtain target solar cell.
Top electrode (such as N electrode) is prepared on the surface of the ohmic contact layer of the AlGaAs/GaNAsBi/GaNAsBi triple-junction monolithic solar cell of growth on the battery of AlGaAs top, bottom electrode (such as P electrode) is prepared at GaAs substrate back, thus the solar cell needed for obtaining.
Above-mentioned growth course can adopt MOCVD (Metal Organic Chemical Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) mode grow.
Triple-junction monolithic solar cell preparation method provided by the invention adopts formal dress to grow, and avoids the complicated technology be inverted growth battery structure and needed first to remove with other support substrates material binds GaAs substrate again, reduces the manufacture difficulty of battery.
Next 1,2 provide one embodiment of the present invention by reference to the accompanying drawings, be described further technical scheme provided by the invention, this preferred embodiment adopts MOCVD method to grow triple-junction monolithic solar cell of the present invention.
(1) growing P-type doping about 3 × 10 on P type GaAs substrate 18
17cm
-3, thickness 3.0 microns the heavily doped layer of GaNAsBi as the base 01 of battery at the bottom of GaNAsBi, regrowth N-type doping about 2 × 10
18cm
-3, thickness 0.2 micron the heavily doped layer of GaNAsBi as the emitter region 02 of battery at the bottom of GaNAsBi.
(2) grow N-type doping content and be greater than 1 × 10
19cm
-3, the GaInP of thickness 0.015 micron or the heavily doped layer 03 of (In) GaAs, then growing P-type doping content is greater than 1 × 10
19cm
-3, thickness 0.015 micron the heavily doped layer 04 of (Al) GaAs, form the first tunnel junction 16.
(3) growing P-type doping content about 3 × 10
17cm
-3, thickness 3.0 microns the heavily doped layer of GaNAsBi as the base 05 of GaNAsBi intermediate cell 15, regrowth N-type doping content about 2 × 10
18cm
-3, thickness 0.2 micron the heavily doped layer of GaNAsBi as the emitter region 06 of GaNAsBi intermediate cell 15.
(4) grow N-type doping content and be greater than 1 × 10
19cm
-3, thickness 0.015 micron the heavily doped layer 07 of GaInP, then growing P-type doping content is greater than 1 × 10
19cm
-3above, the heavily doped layer 08 of AlGaAs of thickness 0.015 micron, form the second tunnel junction 14.
(5) growing P-type doping content is about 1 × 10
17cm
-3, thickness 0.5 micron the heavily doped layer of AlGaAs push up the base 09 of battery 13 as AlGaAs, regrowth N-type doping content is about 2 × 10
18cm
-3, thickness 0.2 micron the heavily doped layer of AlGaAs push up the emitter region 10 of battery 13 as AlGaAs.
(6) then grow N-type doping content and be about 6 × 10
18cm
-3, thickness 0.5 micron GaAs layer push up the ohmic contact layer 11 of battery 13 as AlGaAs.
The structure of the AlGaAs/GaNAsBi/GaNAsBi triple-junction monolithic solar cell obtained with the growth of MOCVD method as shown in Figure 1.
The technology for preparing electrode of solar cell: prepare P electrode 19 at the back side of P type GaAs substrate 18, prepare N electrode 12 on the surface of N-type ohmic contact layer 11, the solar cell needed for acquisition, its structure as shown in Figure 2.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a triple-junction monolithic solar cell, comprises GaAs substrate, it is characterized in that, also comprise the two knot batteries adopting GaNAsBi material to make, the lattice constant of described two knot batteries is all mated with described GaAs substrate lattice;
Described two knot batteries are respectively battery at the bottom of GaNAsBi and GaNAsBi intermediate cell, described solar cell comprises battery at the bottom of the GaNAsBi connected successively on gaas substrates, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction and AlGaAs and pushes up battery, and described AlGaAs pushes up on battery and described GaAs substrate and is respectively equipped with electrode;
At the bottom of described GaNAsBi, the band gap width of battery is 0.94 eV,
The band gap width of described GaNAsBi intermediate cell is 1.39 eV,
The band gap width that described AlGaAs pushes up battery is 1.93 eV.
2. triple-junction monolithic solar cell according to claim 1, is characterized in that, in battery at the bottom of described GaNAsBi, the component of N is the component of 1.45%, Bi is 2.56%.
3. triple-junction monolithic solar cell according to claim 1, is characterized in that, in described GaNAsBi intermediate cell, the component of N is the component of 0.058%, Bi is 0.1%.
4. triple-junction monolithic solar cell according to claim 1, is characterized in that, the component that described AlGaAs pushes up Al in battery is 40.6%.
5. a preparation method for triple-junction monolithic solar cell according to claim 1, is characterized in that, comprises step:
1) battery, the first tunnel junction, GaNAsBi intermediate cell, the second tunnel junction, AlGaAs at the bottom of growing GaN AsBi push up battery and ohmic contact layer successively on gaas substrates, wherein, at the bottom of described GaNAsBi, the band gap width of battery is 0.94 eV, the band gap width of described GaNAsBi intermediate cell is 1.39 eV, and the band gap width that described AlGaAs pushes up battery is 1.93 eV;
2) on described AlGaAs top battery and described GaAs substrate, prepare upper and lower electrode respectively, obtain target solar cell.
6. the preparation method of triple-junction monolithic solar cell according to claim 5, is characterized in that, described triple-junction monolithic solar cell extension adopts mocvd method or the growth of MBE method to be formed.
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| CN102569476A (en) * | 2012-03-13 | 2012-07-11 | 天津三安光电有限公司 | Three-section solar battery and preparation method thereof |
| CN102790120A (en) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof |
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| CN102569476A (en) * | 2012-03-13 | 2012-07-11 | 天津三安光电有限公司 | Three-section solar battery and preparation method thereof |
| CN102790120A (en) * | 2012-07-19 | 2012-11-21 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof |
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