CN103135279B - A kind of thin-film transistor LCD device - Google Patents
A kind of thin-film transistor LCD device Download PDFInfo
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- CN103135279B CN103135279B CN201110398824.5A CN201110398824A CN103135279B CN 103135279 B CN103135279 B CN 103135279B CN 201110398824 A CN201110398824 A CN 201110398824A CN 103135279 B CN103135279 B CN 103135279B
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Abstract
The invention discloses a kind of thin-film transistor LCD device, comprise first substrate, described first substrate comprises multiple minimum repetitive, each minimum repetitive comprises along two adjacent main pixel regions of first direction, each main pixel region comprises three along the adjacent secondary pixel region of second direction, comprises a thin film transistor (TFT) in each pixel region; Second substrate, described second substrate and first substrate are oppositely arranged; Grating glass, described Grating glass is fitted in described second substrate on the surface, each the pixel region that described Grating glass is corresponding is divided into the first vision area and the second vision area, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area and the second vision area and the first vision area and the second vision area.When showing, the first vision area is identical with the light transmission capacity of the second vision area, and the display quantity of information that left eye and the right eye of people receive is identical, therefore there will not be aberration, improves display effect, enhance the stereoscopic sensation of image.
Description
Technical field
The invention belongs to field of liquid crystal display, particularly relate to a kind of thin-film transistor LCD device.
Background technology
In prior art, the arrangement of three pixel regions of a main pixel region of thin-film transistor LCD device is from left to right respectively r (red), g (green), b (indigo plant), wherein, each main pixel region is square or circular, each pixel region is rectangle, and the minor face of each pixel region is substantially parallel with gate line, the long limit of each pixel region is substantially parallel with data line, and the arrangement mode of usual this pixel region is called longitudinal arrangement.
In 3D display, in order to allow the right and left eyes of people see different images, being placed in the grating grid before thin-film transistor LCD device display panel needs longitudinal arrangement, and wherein the size of grating grid is close with the size of a main pixel region; Due to the bit errors when glass plate at grating grid place and thin-film transistor LCD device display panel are assembled, cause grating grid may shelter from certain color, such as block the area of red pixel region, thus cause serious color deviation and aberration.In order to address this problem, prior art provides transversely arranged dot structure, transversely arranged by each color sub pixels district, even if having bit errors when the glass plate at grating grid place and display panel are assembled like this, the secondary pixel region of three colors all can be blocked identical area, although the light transmission capacity of each pixel region declines to some extent, the color that three time pixel regions are formed does not have skew.
Current horizontal pixel arrangements comprises following several: the pixel arrangements that the perpendicular screen that single grid drive is horizontal, the pixel horizontal mode that bigrid drives and the horizontal pixel arrangements of three raster data model.But the horizontal pixel arrangements of the perpendicular screen that single grid drive needs to add buffer and is anyhow transformed by display, adds system cost; When resolution is higher, the horizontal pixel arrangements of three raster data model is difficult to reach driving requirement.So the pixel horizontal mode that prior art generally adopts double grid to drive, as shown in Figure 1, using adjacent two main pixel regions as minimum basic structure in the pixel horizontal mode that double grid drives, each minimum basic structure generally comprises:
Article two, gate lines G 1 and G2, three data lines D1, D2 and D3, six thin film transistor (TFT)s T1, T2, T3, T4, T5 and T6, six pixel electrodes P1, P2, P3, P4, P5 and P6, and three common line C1, C2 and C3.
Under stereoscopic display mode, Grating glass is fitted on thin-film transistor LCD device display panel, as shown in Figure 2, color membrane substrates black matrix" 111 is black, prevent alternatively non-transparent district light leak, each pixel is divided into two parts by the Grating glass be fitted on color membrane substrates surface---the first vision area 121 and the second vision area 122, because the left eye of people is different with the angle of right eye viewing thin-film transistor LCD device display panel, utilize this differential seat angle to cover light and just image can be distributed to right eye or left eye, namely left eye and right eye receive the light of the first vision area 121 and the second vision area 122 respectively, and the light of the first vision area 121 and the second vision area 122 can not be received by left eye or right eye simultaneously, be the image that a width has spatial depth and dimensional information through brain by these two differentiated Images uniting, 3D rendering can be seen.
But under the 3D display mode of existing thin-film transistor LCD device, the first vision area and the second vision area there will be aberration, reduce the stereoscopic sensation of image.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of thin-film transistor LCD device, with under the 3D display mode solving existing thin-film transistor LCD device, the first vision area and the second vision area there will be aberration, reduce the relief problem of image.
This thin-film transistor LCD device, comprising:
First substrate, described first substrate comprises multiple minimum repetitive, each minimum repetitive comprises along two adjacent main pixel regions of first direction, wherein, each main pixel region comprises three along the adjacent secondary pixel region of second direction, comprise a thin film transistor (TFT) in each pixel region, described first direction and second direction are substantially vertical;
Second substrate, described second substrate and first substrate are oppositely arranged, and described second substrate is provided with black matrix", and described black matrix" blocks the lightproof part of described first substrate;
Grating glass, described Grating glass is fitted in described second substrate on the surface, each the pixel region that described Grating glass is corresponding is divided into the first vision area and the second vision area, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area and the second vision area and the first vision area and the second vision area.
Preferably, described thin film transistor (TFT) comprises source electrode, drain electrode, grid and active layer.
Preferably, described minimum repetitive also comprises:
Article two, gate line, described two gate lines are arranged on the first metal layer along first direction;
Article three, common line, described two common line correspond respectively to two main pixel regions, and are arranged on the first metal layer;
Article three, data line, described three data lines are arranged on the second metal level along second direction;
Six pixel electrodes, described six pixel electrodes lay respectively in each pixel region, and are arranged on the 3rd metal level.
Preferably, described source electrode and the electrical connection of described data line.
Preferably, described grid and the electrical connection of described gate line.
Preferably, described drain electrode and the electrical connection of described pixel electrode.
Preferably, also liquid crystal layer is comprised between described first substrate and second substrate.
Due to the area equation shared by the first vision area in thin-film transistor LCD device provided by the present invention each pixel and the thin film transistor (TFT) in the second vision area, so the first vision area is identical with the glazed area of the second vision area, when showing, first vision area is identical with the light transmission capacity of the second vision area, the display quantity of information that left eye and the right eye of people receive is identical, therefore there will not be aberration, improve display effect, enhance the stereoscopic sensation of image.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is existing thin-film transistor LCD device first substrate structural representation;
Fig. 2 is existing thin-film transistor LCD device structural representation;
Fig. 3 is thin-film transistor LCD device first substrate structural representation provided by the present invention;
Fig. 4 is the structural representation after thin-film transistor LCD device first substrate provided by the present invention and second substrate combine;
Fig. 5 is thin-film transistor LCD device structural representation provided by the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As described in background, under the 3D display mode of existing thin-film transistor LCD device, the first vision area and the second vision area there will be aberration, reduce the stereoscopic sensation of image.
Inventor finds after deliberation, in one pixel region, TFT is positioned at one jiao of this pixel region, some TFT are positioned at the first vision area, other TFT is positioned at the second vision area, so, with regard to one pixel region, a TFT is only present in the first vision area or the second vision area, cause the difference of the first vision area and the second vision area shading-area, namely the first vision area is not identical with the glazed area of the second vision area, when showing, first vision area is not identical with the light transmission capacity of the second vision area, the display quantity of information that left eye and the right eye of people receive is not identical, therefore there will be aberration, reduce the stereoscopic sensation of image.
The invention discloses a kind of thin-film transistor LCD device, comprising:
First substrate, described first substrate comprises multiple minimum repetitive, each minimum repetitive comprises along two adjacent main pixel regions of first direction, wherein, each main pixel region comprises three along the adjacent secondary pixel region of second direction, comprises a thin film transistor (TFT) in each pixel region;
Second substrate, described second substrate and first substrate are oppositely arranged, and described second substrate is provided with black matrix", and described black matrix" blocks the lightproof part of described first substrate;
Grating glass, described Grating glass is fitted in described second substrate on the surface, each the pixel region that described Grating glass is corresponding is divided into the first vision area and the second vision area, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area and the second vision area and the first vision area and the second vision area.
As can be seen from the above scheme, the first vision area in thin-film transistor LCD device each pixel and the area equation shared by thin film transistor (TFT) in the second vision area, so the first vision area is identical with the glazed area of the second vision area, when showing, first vision area is identical with the light transmission capacity of the second vision area, and the display quantity of information that left eye and the right eye of people receive is identical, therefore there will not be aberration, improve display effect, enhance the stereoscopic sensation of image.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Embodiment one:
Present embodiment discloses a kind of thin-film transistor LCD device, comprising:
First substrate, described first substrate comprises multiple minimum repetitive, each minimum repetitive comprises along two adjacent main pixel regions of first direction, wherein, each main pixel region comprises three along the adjacent secondary pixel region of second direction, comprises a thin film transistor (TFT) in each pixel region.
Concrete, as shown in Figure 3, described first substrate comprises:
First glass film plates (not shown), the making material of described first glass film plates is glass or other materials.
Article two, gate lines G 11 and G12, described gate lines G 11 and G12 are set in parallel in the first metal layer on the first glass film plates surface along first direction, and gate lines G 11 and G12 are provided with grid (not marking in figure).
Article three, common line C11, C12 and C13, described common line C11, C12 and C13 are all arranged on the first metal layer along first direction.
Gate insulator (not shown) is coated with on the surface at gate lines G 11, G12 and common line C11, C12, C13, active layer (not marking in figure) is provided with in the position that gate insulator is corresponding with grid on the surface, described gate insulator also covers the first glass film plates on the surface, and it makes material and is preferably SiNx.
Gate insulator and active layer surface are provided with the second metal level, and three data lines D11, D12, D13 along second direction are arranged on the second metal level.Described second metal level is also provided with source electrode and drain electrode (not marking in figure), described data line extends to source electrode in a first direction, and it is into a single integrated structure with described source electrode, a part for described drain electrode and source electrode are arranged in described active layer surface, described source electrode, drain electrode form the thin film transistor (TFT) (TFT on first substrate together with active layer, grid, Thin Film Transistor), i.e. T11, T12, T13, T14, T15 and T16.Article three, data line D11, D12, D13 and two gate lines G 11, G12 constitute two main pixel regions and six pixel regions included by two main pixel regions, two main pixel regions arrange along first direction, three in each main pixel region times pixel region arranges along second direction, in each pixel region, in the axis L1 of TFT and the secondary pixel head of district limit corresponding with it, separated time L2 overlaps, article three, common line C11, C12, C13 correspond respectively to along two times adjacent pixel regions of first direction, in a second direction by the metal conduction of the second metal level.
It should be noted that, in theory, optimal situation is, in each pixel region, in the axis L1 of TFT and the secondary pixel head of district limit corresponding with it, separated time L2 overlaps, but there will be error unavoidably when actual production, the middle separated time L2 on the axis L1 of TFT and time pixel head of district limit is caused not overlap, in order to reduce product error as far as possible, in actual production, convergence coincidence is better for the axis L1 of TFT and the middle separated time L2 on time pixel head of district limit, that is, the relative position relation of the TFT described in the present embodiment and the secondary pixel region corresponding with it is not limited in the axis L1 of TFT and overlaps completely with separated time L2 in its corresponding secondary pixel head of district limit, also can be level off to coincidence.
Passivation layer (not shown) is also provided with on the surface at the second metal level and gate insulator, the position be positioned in described passivation layer above drain electrode is provided with contact hole, passivation layer surface is provided with the 3rd metal level, described 3rd metal level fills described contact hole, described 3rd metal level is transparent metal layer, makes material and is preferably tin indium oxide.Pixel electrode is arranged on the 3rd metal level, and pixel electrode is separately positioned in six pixel regions accordingly, is respectively P11, P12, P13, P14, P15 and P16, and pixel electrode is electrically connected with drain electrode by contact hole.
It should be noted that, described first direction is basically perpendicular to described second direction, and can adjust accordingly the orientation of first direction and second direction as the case may be.In addition, the structure be made up of two main pixel regions described in the present embodiment, be only a minimum repetitive in thin-film transistor LCD device array substrate provided by the present invention, each main pixel region comprises three pixel regions (preferred one is combined as red time pixel region, green time pixel region and blue sub-pixels district), namely a minimum repetitive comprises six pixel regions, and described thin-film transistor LCD device array substrate also comprises multiple minimum repetitive similar like this.
Second substrate, described second substrate and described first substrate are oppositely arranged, described second substrate includes black matrix", as shown in Figure 4, black matrix" 211 is corresponding with the lightproof part of first substrate, and namely black matrix" 211 shelters from the gate line of described first substrate except pixel electrode light transmission part, data line, common line, TFT and other parts.
Described second substrate also includes the second glass film plates, color layer, protective seam and nesa coating, and second substrate and first substrate are connected together by frame is gluing, by gaps, and is filled with liquid crystal layer in the gap of first substrate and second substrate.
Grating glass, as shown in Figure 5, described Grating glass is fitted in described second substrate on the surface, each the pixel region corresponding with it is divided into the first vision area 301 and the second vision area 302 by described Grating glass, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area 301 and the second vision area 302 and the first vision area 301 and the second vision area 302.
As can be seen from the above scheme, the first vision area 301 in the thin-film transistor LCD device that the present embodiment provides each pixel and the area equation shared by thin film transistor (TFT) in the second vision area 302, so the first vision area 301 is identical with the glazed area of the second vision area 302, when showing, first vision area 301 is identical with the light transmission capacity of the second vision area 302, the display quantity of information that left eye and the right eye of people receive is identical, therefore there will not be aberration, improve display effect, enhance the stereoscopic sensation of image.
Embodiment two:
Present embodiment discloses a kind of method for making corresponding with thin-film transistor LCD device described in above-described embodiment, the method comprises:
Step S1, provide first substrate.
Specifically comprise:
Step one, provide the first glass film plates, form the first metal layer on the surface at described first glass film plates, and the first metal layer is etched, form gate line and common line.
Concrete, the making material of described first glass film plates is glass or other materials.
Gate line is formed on the surface and common line specifically comprises at described first glass film plates:
Plasma sputtering mode is adopted to form the first metal layer on the surface at described first glass film plates, namely first described first glass film plates is put into reaction chamber, energetic particle hits has highly purified target material solid plate, by physical process knock-on atom, these are passed vacuum by knocking-on atom, finally be deposited on the first glass film plates surface, obtain the first metal layer.But the formation of the first metal layer is not limited in plasma sputtering mode, other physical vapor deposition mode can also be utilized to be formed, be not described in detail at this.And then photoetching is carried out to the first metal layer, i.e. spin coating photoresist on described the first metal layer, form photoresist layer, the mask with gate line and common line pattern is utilized to expose, photoresist layer is formed gate line and common line pattern, after development, photoresist layer is formed gate line and common line figure, there is the photoresist layer of gate line and common line figure for mask, obtain gate line and common line through the technique such as dry etching or wet etching, described gate line is provided with grid.
It should be noted that, " gate line and common line pattern " described in the present embodiment is gate line and the common line pattern of two dimension on photoresist layer surface, and area of the pattern is only limited to photoresist layer surface and not to surperficial downward-extension, does not have three-dimensional shape; Described " gate line and common line figure ", for having the three-dimensional picture of three-dimensional shape, the thickness of this figure is the thickness of photoresist layer.
Step 2, form gate insulator on the surface at gate line, common line and the first glass film plates, and form amorphous silicon layer on the surface at gate insulator, described amorphous silicon layer is etched, is formed with active layer.
Concrete, chemical vapor deposition mode is adopted to form gate insulator on the surface at described gate line, common line and the first glass film plates, namely reaction chamber put into by the first glass film plates first surface being provided with gate line and common line, gas precursors is transferred to the first glass film plates surface and carries out suction-operated and reaction, then the accessory substance of reaction is removed, obtain gate insulator.But the formation of gate insulator is not limited in chemical vapor deposition mode, the modes such as other physical vapor deposition can also be utilized to be formed, be not described in detail at this.Described gate insulator is SiN
xlayer, and form amorphous silicon layer by identical technique on the surface at gate insulator, photoetching is carried out to described amorphous silicon layer, is formed with active layer in the position corresponding with grid.
Step 3, form the second metal level on the surface at active layer and gate insulator, and the second metal level is etched, form data line, source electrode and drain electrode.
Concrete, physical vapor deposition process is adopted to form the second metal level on the surface at described active layer and gate insulator, afterwards, photoetching process is adopted to form data line in described second metal level, source electrode and drain electrode, described data line is arranged in a second direction, and there is extension in a first direction, and data line extending part in a second direction and described source electrode are an one-piece construction, a part for described drain electrode and source electrode are arranged in active layer surface, described source electrode, drain electrode and active layer, grid together form thin film transistor (TFT), in the axis of thin film transistor (TFT) and the secondary pixel head of district limit corresponding with it, separated time overlaps substantially.
Step 4, on described data line, source electrode, drain and gate surface of insulating layer, form passivation layer, described passivation layer is etched, form contact hole.
Concrete, adopt chemical vapor deposition method to form passivation layer on the surface at described data line, common line and gate insulator, afterwards, adopt photoetching process to form contact hole in described passivation layer, described contact hole is positioned at the passivation layer of drain electrode top.
Step 5, in described passivation layer surface formed the 3rd metal level, described 3rd metal level is etched, formed pixel electrode.
Step S2, provide second substrate.
Described second substrate includes the second glass film plates, black matrix", color layer, protective seam and nesa coating.
Also comprise the first substrate after cleaning and the upper alignment film solution of second substrate coating afterwards, and friction trend, then sealed plastic box is coated in first substrate surrounding, and scatter sept and make the strong point thereon, then by first substrate and second substrate combination, form empty box with sealed plastic box involution, the box substrate of this sky is cut disconnected, sliver, obtain the size needed for final display device product, after inspection, inject liquid crystal material with vacuum mode and in addition involution; In addition, first can also inject liquid crystal, carry out cutting after part involution again.
Step S3, provide Grating glass.
Described Grating glass is fitted in described second substrate on the surface, each the pixel region that described Grating glass is corresponding is divided into the first vision area and the second vision area, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area and the second vision area and the first vision area and the second vision area.
Visible, the first vision area in thin-film transistor LCD device each pixel and the area equation shared by thin film transistor (TFT) in the second vision area, so the first vision area is identical with the glazed area of the second vision area, when showing, first vision area is identical with the light transmission capacity of the second vision area, and the display quantity of information that left eye and the right eye of people receive is identical, therefore there will not be aberration, improve display effect, enhance the stereoscopic sensation of image.
In this instructions, various piece adopts the mode of going forward one by one to describe, and what each some importance illustrated is the difference with other parts, between various piece identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. a thin-film transistor LCD device, is characterized in that, comprising:
First substrate, described first substrate comprises multiple minimum repetitive, each minimum repetitive comprises along two adjacent main pixel regions of first direction, wherein, each main pixel region comprises three along the adjacent secondary pixel region of second direction, comprise a thin film transistor (TFT) in each pixel region, described first direction and second direction are substantially vertical;
Second substrate, described second substrate and first substrate are oppositely arranged, and described second substrate is provided with black matrix", and described black matrix" blocks the lightproof part of described first substrate;
Grating glass, described Grating glass is fitted in described second substrate on the surface, each the pixel region that described Grating glass is corresponding is divided into the first vision area and the second vision area, the area equation shared by thin film transistor (TFT) in the area equation of described first vision area and the second vision area and the first vision area and the second vision area.
2. display device according to claim 1, it is characterized in that, described thin film transistor (TFT) comprises source electrode, drain electrode, grid and active layer.
3. display device according to claim 2, it is characterized in that, described minimum repetitive also comprises:
Article two, gate line, described two gate lines are arranged on the first metal layer along first direction;
Article three, common line, described two common line correspond respectively to two main pixel regions, and are arranged on the first metal layer;
Article three, data line, described three data lines are arranged on the second metal level along second direction;
Six pixel electrodes, described six pixel electrodes lay respectively in each pixel region, and are arranged on the 3rd metal level.
4. display device according to claim 3, is characterized in that, described source electrode and the electrical connection of described data line.
5. display device according to claim 4, is characterized in that, described grid and the electrical connection of described gate line.
6. display device according to claim 5, is characterized in that, described drain electrode and the electrical connection of described pixel electrode.
7. display device according to claim 1, is characterized in that, also comprise liquid crystal layer between described first substrate and second substrate.
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| CN110263773B (en) * | 2019-07-31 | 2021-08-06 | 厦门天马微电子有限公司 | Display module, display device and manufacturing method of grating film layer |
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| CN1744724A (en) * | 2004-09-03 | 2006-03-08 | 日本电气株式会社 | Image display, portable terminal, display floater and lens |
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