CN103132044A - Screening cover for improving film-coating uniformity of flat target - Google Patents
Screening cover for improving film-coating uniformity of flat target Download PDFInfo
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- CN103132044A CN103132044A CN2013100970446A CN201310097044A CN103132044A CN 103132044 A CN103132044 A CN 103132044A CN 2013100970446 A CN2013100970446 A CN 2013100970446A CN 201310097044 A CN201310097044 A CN 201310097044A CN 103132044 A CN103132044 A CN 103132044A
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- 238000009501 film coating Methods 0.000 title abstract 9
- 238000012216 screening Methods 0.000 title abstract 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
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- 238000010849 ion bombardment Methods 0.000 claims description 6
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- 230000008021 deposition Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 22
- 238000005240 physical vapour deposition Methods 0.000 abstract description 11
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000011148 porous material Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 5
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- 238000004544 sputter deposition Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention relates to an airflow-baffle-equipped screening cover of a flat target of a magnetron sputtering film-coating machine, which is used for improving film-coating uniformity and belongs to the technical field of thin film solar cells. The invention aims to provide a screening cover device and shielding method which can improve film-coating uniformity and are used for a PVD (physical vapor deposition) film-coating machine in order to improve film-coating uniformity so as to increase the conversion efficiency of a thin film solar cell. The invention is technically characterized in that a screening cover (10) is provided with an airflow baffle (11) for protecting airflow pores on an air pipe (9) and a flow dividing device for thoroughly mixing airflow. The method is characterized in that the screening cover (10) is provided with the airflow baffle (11), a small long slot is formed between the screening cover (10) and the airflow baffle (11), and the airflow baffle (11) is arranged to encircle the air pipe (9) so as to protect the holes on the air pipe (9) from bombardment. The invention obviously improves the uniformity and film-coating quality of a film. Besides, the invention increases the film-coating quality of a film-coating machine.
Description
Technical field
The present invention relates to a kind of shielding case band blast fence of magnetron sputtering coater planar target, be used for improving the plated film homogeneity, belong to technical field of thin-film solar.
Background technology
Generally by magnetron sputtering referred to as PVD, magnetic-controlled sputtering coating equipment or title PVD coating equipment are widely used on the industry depositional coating techniques such as solar cell, touch-screen, TFT, its principle of work is by the particle encounter target material surface, the plasma-deposited thin film layer of magnetron sputtering.At present, existing solar cell generally adopts planar target in manufacturing, and this planar target technology is more more ripe and stable than the rotation target technology.The structure of planar target is generally that target and backboard are fixed on magnetic receiver, the inner magnet set of placing of magnetic receiver, and the magnetic receiver that cover plate is housed is arranged in sealed vacuum chamber body; The outside of target installs the cathode shield with opening additional; The tracheae of logical argon gas is installed in cathode shield, has the aperture towards target on tracheae; Target connects the negative potential of negative high frequency electric source, and the vacuum chamber cavity of sealing connects positive electrode.The cathode shield working process is to pass into gas to target material surface in advance in the tracheae of logical argon gas before sputter, the glow discharge of deposition process target material surface, and magnetron sputtering forms plasma body, sees through the cathode shield opening at the substrate surface depositional coating.Planar target sinks and there will be thicknesses of layers inhomogeneous in big area, affects the transformation efficiency of film (non-crystalline silicon) solar cell.For example the plating of the AZO rete of back electrode is too thin, can make the light that sees through photoelectric conversion layer (amorphous silicon layer) can not fully be reflected back " the light seizure " that reaches maximum, will reduce like this transformation efficiency of photoelectric conversion layer (amorphous silicon battery).If the thick plating of AZO rete is too thick, can make light loss in the AZO layer increase, the transformation efficiency that affects equally photoelectric conversion layer (amorphous silicon battery) descends.Certainly, in production process, cause the factor of deposited film thickness ununiformity a lot, the Magnetic field inhomogeneity as inhomogeneous as the target material surface atmosphere, that magnet set produces and above said cathode shield structure etc.Chinese Patent Application No. 200910167703.2 " a kind of method of improving magnetron-sputtered film thickness uniformity " has provided a kind of by adopting modifying mask between substrate and cathode target, reduces near the circle centre position sedimentation rate, to realize the homogeneity of rete; But this technical scheme is to be based upon in vacuum chamber to pass under the uniform state of atmosphere, the gas that passes into that arrives substrate surface keeps the constant modification method provided.And, in actual industrialization production process, the common conduit that passes into gas, may cause because of the size of production well on tracheae the nuance of airshed, air flow line can be partial to the opening part of cathode target target cover, and the air-flow that causes arriving target surface is inhomogeneous.Along with the target use procedure, the bombardment of the particle that the tracheae of logical argon gas shoots out to tracheae, also can cause aperture bigger than normal to become larger, airshed is large, the energy of ion bombardment can increase, and more aggravates the deviation of tracheae bore size, again causes the in uneven thickness of deposited film.
Summary of the invention
The present invention is intended to solve above said magnetron sputtering planar target and has the even problem of sputter coating thickness ununiformity, generally there will be the conduit that passes into gas, because the size of production well on tracheae can cause the nuance of airshed, the air-flow that causes arriving target surface is inhomogeneous.And provide a kind of through repeatedly commerical test and testing research draw this kind of technical solution.
One of purpose of the present invention is to provide the inhomogeneity cathode target of plated film that can improve that a kind of PVD coating equipment uses and dredges the stream device, in the hope of the gas that passes into that arrives substrate surface, reaches as far as possible constant, improves the efficiency of conversion of thin-film solar cells to improve the plated film homogeneity
.
How another object of the present invention break through the bottleneck that prior art exists, and effectively protects the pore of the ventpipe ventilation in the cathode target shielding case not bombarded, and to keep air vent aperture constant, seeks to improve homogeneity and the conforming method of coating quality.
For realizing task of the present invention; the technical solution proposed is: a kind of inhomogeneity shielding case of planar target plated film that improves; comprise vacuum cavity and planar target; and inlet pipe, the thin stream device of protecting ventpipe air-flow aperture dredging flow amount and air flow line is arranged on the shielding case of PVD coating equipment planar cathode target.By the opening part of dredging the stream device and being arranged in the shielding cover body of planar cathode target, to block the ventpipe in shielding case.Method is utilize to dredge the stream device to block on ventpipe the numerous apertures jet towards cathode targets.The baffle plate that should dredge the stream device is " Z " font or " L ".What shape no matter thin stream plate in shielding case be, this dredge stream plate and shielding not between always leave the gas that towards the gap of target, tracheae is filled with together and be discharged to target material surface by this place, gap.
Implement the positively effect that the present invention produces: the homogeneity and the coating quality that have improved significantly rete.Improved the coating quality of coating equipment.Shielding case of the present invention is dredged the stream device fully mixes air-flow in baffle plate, forms one gap R with uniform pressure, continuous air-out.Clung to the inspiration of Xing Dinglv Vs=f (Pd), when gap R is very little, under the certain state of stream pressure P, firing voltage Vs needs very large principle that could starter.Sputtering voltage of the present invention is 300-500V, air-flow not there will be glow discharge in the baffle plate of dredging the stream device, thereby avoided pore on the air inlet tracheae by the impact of magnetron sputtering ion bombardment, guarantee that the tracheal orifice size is constant, contribute to homogeneity and the consistence of thickness of deposited film, finally contribute to the raising of cell integrated quality and efficiency of conversion.
The accompanying drawing explanation
The present invention further illustrates its principle of work in connection with the following drawings.Silicon-based film solar cells is generally applied magnetron sputtering technology, prepare back electrode film, using target as negative electrode, apply negative high voltage, substrate is as anode, form electric field between target and substrate, utilize magnetic field and electric field interaction, about beam electrons, in the operation of target near surface spirrillum, constantly clashes into argon gas and produces ion, ion hits target surface and sputters target atom under electric field action, is deposited on the required conductive film layer of acquisition on substrate.
Fig. 1. be structural representation of the present invention.
Fig. 2. be shielding case in Fig. 1 (cathode shield) 10 interior configuration schematic diagram.
Fig. 3. be slit R and air strength P between shielding case 10 of the present invention and blast fence 11.
Fig. 4. be the prior art schematic diagram.
Fig. 5. be prior art air-flow distribution schematic diagram.
Fig. 6. be to test coating measure point distribution schematic diagram for the present invention.Technique and data are respectively in Table 1-3.
Fig. 7. be the embodiment of the present invention 1 figure.
Fig. 8. be the embodiment of the present invention 2 figure.
Fig. 9. be the embodiment of the present invention 3 figure.
Figure 10. shielding case 10 of the present invention is with the schematic diagram of stiffening web.
Silicon-based film solar cells is generally applied magnetron sputtering technology, prepare back electrode film, using target as negative electrode, apply negative high voltage, shielding case 10 and vacuum cavity shell are anode, target 12 forms electric field in chamber as anode, in magnetic field and electric field interaction, about beam electrons is in the spin shape operation of target near surface, constantly clash into by tracheae 3 and send argon gas generation ion here, ion hits target surface and sputters target atom under electric field action, is deposited on the required conductive film layer of acquisition on substrate 15.
Difference with the prior art, do contrast by the present invention and prior art respectively for a better understanding of the present invention. and Fig. 1 to Fig. 3 is the configuration that the present invention is the PVD coating equipment, Fig. 4-5th, the configuration of prior art PVD coating equipment.
The present invention is shown in that Fig. 1 to Fig. 3 compares with prior art Fig. 4-5. the cathode target of same section PVD coating equipment configuration comprises vacuum cavity 1, on its cavity 1, opening is arranged, by shielding case or title cathode shield 10, are opening parts that anode is fixed on vacuum cavity 1, the interior configuration tracheae 9 of cathode shield 10 comprises elbow 7, threeway 6 and screw sealing 14.The cover plate 2 corresponding with cathode shield 10 is fixed on the opening part of cavity 1, the magnetic receiver 7 be shielded in cathode shield 10 is fixed on cover plate 2, the inner unlisted N utmost point of magnet set 4(Fig. 1 of placing of magnetic receiver 7), magnetic boots 5 are arranged in order to improve the magnetic field linear distribution on magnetic receiver 3, the backboard 13 of target 12 is fixed on magnetic receiver 3, by above assembly, is planar target.Target 12 can pass through screw or welding and backboard 13 to be fixed, and the water coolant that the surperficial heat of target 12 passes into by backboard 13 is led away heat, avoids the excessive generation distortion of interior target 12 heat of cathode shield 10.On the cathode shield 10 corresponding with target 12 outsides, an opening is arranged, the effect of this opening is that the particle that target 12 is sputtered out is splashed to more than substrate 15(not shown in FIG. by this opening) upper depositional coating.Tracheae 9 and elbow 7 and threeway parts 6 that cathode shield 10 is equipped with, be all to target 12 surfaces, pass into during for magnetron sputtering gas accessory.Magnet set 4 at corresponding target 12, open the aperture of row's internal diameter size consistent (between Φ 0.2mm-Φ 0.5mm) on tracheae 9 in the magnetic field range that it produces, and the spacing between aperture is fixing consistent, its effect is to allow on the tracheae 9 that passes into gas each aperture gas flow out roughly suitable, thus reach to plate out the thicknesses of layers come basically identical.Yet, if be coated with by prior art, thicknesses of layers out is also inconsistent.Reason is that the processing small holes to tracheae 9 improves working accuracy again and again, while still finding each aperture of airflow passes, and tolerance out or some difference.Tracing it to its cause is that gas passes through tracheae 9 importings, and the difference that pore opening brings due to mismachining tolerance can be brought nuance to airshed.Test is discovery also, and air flow line can be partial to the opening part of cathode shield 10, causes the air-flow that arrives target 12 target surfaces also to there will be inhomogeneous.Show that aperture on tracheae 9, due to mismachining tolerance, can cause thicknesses of layers inhomogeneous.Briefly, the process of using from target 12, because magnetron sputtering particle out can cause particle bombardment to tracheae 9, cause aperture bigger than normal under particle constantly bombards, it is increasing that aperture can become, and airshed also can become greatly, causes poly-the increasing of energy of bombardment.After use for some time, the pore size of the aperture on tracheae 9 there will be serious deviation like this, need to keep Aperture deviation little, guarantee the homogeneity of thicknesses of layers through again adjusting, and such processing step must slow down productive temp.Unlike the prior art, owing to seeing the prior art Shortcomings, so improve the interior configuration of shielding case 10, increasing blast fence 11 is said thin stream device in the present invention, its effect one, and the aperture on protection tracheae 9 is not subject to magnetron sputtering ion bombardment; Two fill the gas of tracheae 9 ejections in blast fence and fully mix.
In Fig. 3, the present invention dredges the stream device to gas-flow configuration baffle plate 11 on the vacuum cavity 1 configuration cathode shield 10 of PVD coating equipment and tracheae 9, this device is arranged between cathode shield 10 and tracheae 9, the blast fence 11 of dredging the stream device is arranged in cathode shield 10, and blast fence 11 is placed on the opening part of cathode shield 10, arrive the direction of target to change air-flow, make air-flow in the interior abundant mixing of blast fence 11 of dredging the stream device, air pressure reaches under uniform pressure P and can improve the PVD coating equipment and be coated with film quality.And aura can not reach tracheae 9 places, avoided spilehole on tracheae 9 to be subject to the impact of magnetron sputtering ion bombardment, avoid small-bore in the same size on tracheae 9, air-flow is fully mixed in blast fence, for the homogeneity of improving rete and consistence, play vital effect.Fig. 4-5th, prior art and same section of the present invention are not repeated.
Fig. 6, the blast fence 11 of anode cap 10 configurations of the present invention.Blast fence 11 with between cathode shield 10 surrounds, leave the distance for R together with the slit gap, this slit is towards target 12, air strength P distributes towards target 12 surfaces.
In Fig. 6 A1-A22 be the present invention compared with the prior art to the distribution schematic diagram of done coating measure point.Test is carried out plated film on magnetron sputtering continuous lines WDJ-2400 equipment, sample presentation A1-A20, and the processing parameter of use is as table 1
The data of contrast test, subordinate list 2 is uniformity coefficient 24% of using the prior art plated film to distribute, uses the technology of the present invention solution, the uniformity coefficient 7% that plated film distributes, improved 17%.
Specific embodiment
The present invention, in conjunction with Fig. 7-10, further illustrates the positively effect of technical characterstic of the present invention and generation by 4 examples and sample presentation simultaneous test.
Embodiment 1
See Fig. 7, the cathode shield of the present embodiment adopts the stainless steel materials flanging to be stamped to form, the cover body of shielding case 10 is concave shape, concave edge leaves and the fixing edge of using of cavity 1, shielding case 10 concave surface openings are aimed at target 12 and substrate 15, be used for plasma sputter is deposited on substrate 15, many equidistant spileholes that distribute on the tracheae 9 of the ventilation body of installing in the bight of indent are blocked by the blast fence 11 surrounded.Baffle plate 11 is welded on shielding case 10 inner corners, one side of baffle plate 11 and the side of cover body 10 leave the gap of 0.3mm, planar target is fixed on backboard 13 fixing with magnetic receiver 3 by target 12, in magnetic receiver 3 inside, magnet set 4 is arranged, magnetic receiver 3 is arranged on cover plate 2, then be fixed on vacuum cavity 1, shielding case 10 openings are over against target 12.On magnetron sputtering equipment, the substrate of same specification is not added air-flow baffle plate 11 and adds air-flow baffle plate 11 for shielding case 10 and deposited respectively, measured by the same position A1 to A20 to the deposition of thin thickness.
Embodiment 2
See Fig. 8, blast fence 11 sectional views are " Z " font, opening part in cathode shield 10 surrounds tracheae 9, blast fence 11 is arranged on cathode shield 10 walls and can be screwed on one side, the other side of blast fence 11 and the distance that leaves a long and narrow gap R between cathode shield 10 are for 0.2mm, the slit gap is towards target 12, make air flow direction target 12 surfaces, the biography roller 16 of PVC coating equipment send substrate 15, at vacuum cavity 1 magnetron sputtering deposition plating on substrate 15, insulating mat 17 is added between cover plate 2 and vacuum cavity 1.Opening part at the shielding case 10 of planar target is installed blast fence 11, surround the interior tracheae 9 of cathode shield 10, before the aperture of giving vent to anger of gear on tracheae 9, prevent that aperture from suffering magnetron sputtering ion bombardment, a long slit together towards target 12 continuous air-outs is arranged between blast fence 11 and cathode shield 10, when between blast fence 11 and cathode shield 10, the distance R (see figure 3) is very little, can changes air flow line, and the abundant mixed stability of air-flow is flowed out.
See Fig. 9
The difference of the present embodiment and embodiment 2 is only different at the moulding process of shielding case 10 and blast fence 11, the present embodiment shielding case 10 and blast fence 11 adopt once shaped, be convenient to quick installation, the other side of blast fence 11 and the distance that leaves a long and narrow gap R between cathode shield 10 are for 0.4mm, other is identical with embodiment 2, at this, repeat no more.
Embodiment 4
See that Figure 10 the present embodiment is that former air-flow baffle plate 11 is increased to stiffening web 201, make blast fence not because of oversize distortion, the difference of the present embodiment and embodiment 3 is that blast fence 11 ' and the cathode shield 11 of the present embodiment is formed in one, and makes to install more convenient and quicker, and other function is all identical.
Table 1
Use prior art, when adopting original tracheae and anode cap, after using for some time, carry out the thicknesses of layers test.With reference in Fig. 6 shown in mark, record the substrate membrane layer thickness of its correspondence position, concrete data are as follows:
Table 2
From above-mentioned data, the ununiformity of thicknesses of layers is 24%, illustrates that the otherness of thicknesses of layers is very large.The account form of ununiformity is: (max-min)/(max+min).Generally the rete consistence means by ununiformity, and the numerical value of ununiformity is larger, illustrates that consistence is poorer.
Carry out plated film A1-A21 on same magnetron sputtering continuous lines WDJ-2400 equipment, the processing parameter of use is with embodiment 1.But cathode shield and tracheae that the present invention adopts, measured the substrate membrane layer thickness of mark shown in Fig. 6, concrete data are as follows:
Table 3
From above-mentioned data, the ununiformity of thicknesses of layers is 7%, illustrates that the otherness of thicknesses of layers has been dwindled a lot.
Claims (13)
1. one kind is improved the inhomogeneity shielding case of planar target plated film; comprise vacuum cavity; planar target and substrate; it is characterized in that on shielding case (10) having an air-flow to dredge the stream device; the spilehole of giving vent to anger on this unit protection tracheae (9), said shielding case (10) and air-flow are dredged between the stream device a long and narrow gap towards target (12) (R).
2. one kind is improved the inhomogeneity shielding case of planar target plated film, comprises vacuum cavity, and planar target and substrate is characterized in that it is a blast fence (11) that described air-flow is dredged the stream device, and this baffle plate (11) and shielding case (10) surround tracheae (9).
3. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 2, is characterized in that dredging the opening part that the blast fence (11) of stream device is arranged in shielding case (10) and block the aperture of giving vent to anger on ventpipe (9).
4. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 3, is characterized in that the blast fence (11) of described thin stream device is " Z " font or " L " shape.
5. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 1, is characterized in that the cover body of described shielding case (10) is concave shape, and spill limit one side is arranged on vacuum cavity (1) inwall.
6. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 4, is characterized in that described shielding case (10) concave surface opening aims at target (12), by the magnetron sputtering ion deposition on substrate (15).
7. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 2, is characterized in that the upper many equidistant spileholes that distribute of the described tracheae (9) surrounded by blast fence (11) and shielding case (10).
8. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 1, is characterized in that described shielding case (10) and blast fence (11) are that disposal molding forms and surrounds tracheae (9).
9. according to claim 1-7 any one described a kind of inhomogeneity shielding case of planar target plated film that improves wherein, it is characterized in that described shielding case (10) and blast fence (11) form disposal molding, and have in blast fence (11) between a side and shielding case (10) and leave a long slit (R).
10. a kind of inhomogeneity shielding case of planar target plated film that improves according to claim 1, is characterized in that the long slit between described shielding case (10) one sides and blast fence (11) is 0.2～0.4mm apart.
11. one kind is improved the method that planar target plated film homogeneity forms shielding; comprise vacuum cavity; planar target and substrate; it is characterized in that the spilehole of giving vent to anger that blast fence (11) and shielding case (10) surround on tracheae (9) protection tracheae fully mixes air-flow in blast fence (11), a side shielding case (10) of blast fence (11) has a long slit (R).
12. improve according to one kind of claim 10 method that planar target plated film homogeneity forms shielding, it is characterized in that described shielding case (10) forms and surrounds tracheae (9) with blast fence (11) disposal molding.
13. improve according to one kind of claim 10 method that planar target plated film homogeneity forms shielding, it is characterized in that (11) sides of described blast fence are welded on shielding case (10), the other side of blast fence (11) and shielding case (10) leave a very little slit (R), make the air-flow can glow discharge in blast fence (11), avoid the aperture on magnetron sputtering ion bombardment tracheae (9).
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| CN201310097044.6A CN103132044B (en) | 2013-03-25 | 2013-03-25 | A kind of shielding case improving planar target plated film homogeneity |
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| CN201310097044.6A CN103132044B (en) | 2013-03-25 | 2013-03-25 | A kind of shielding case improving planar target plated film homogeneity |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103643214A (en) * | 2013-12-20 | 2014-03-19 | 安徽省蚌埠华益导电膜玻璃有限公司 | Deposited film preventing protection cover of vacuum air pipe |
| CN104359423A (en) * | 2014-11-18 | 2015-02-18 | 刘杰波 | Surface profile measuring device |
| CN104878361A (en) * | 2015-06-24 | 2015-09-02 | 安徽纯源镀膜科技有限公司 | Magnetron sputtering coating equipment |
| CN108291293A (en) * | 2015-12-09 | 2018-07-17 | 应用材料公司 | It is configured in the system that sputtering sedimentation is carried out on substrate, the method for the screening arrangement of sputter deposition chamber and for providing electrical shielding in sputter deposition chamber |
| CN109355636A (en) * | 2018-12-15 | 2019-02-19 | 湖南玉丰真空科学技术有限公司 | A kind of continuous coating production line inlet and outlet room air charging system |
| CN109402585A (en) * | 2018-11-30 | 2019-03-01 | 浙江上方电子装备有限公司 | A kind of magnetic control sputtering vacuum coating equipment that process gas is evenly distributed |
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| CN113046710A (en) * | 2021-03-09 | 2021-06-29 | 蓝思科技（长沙）有限公司 | Magnetron sputtering coating uniformity adjusting device and method |
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| CN103643214A (en) * | 2013-12-20 | 2014-03-19 | 安徽省蚌埠华益导电膜玻璃有限公司 | Deposited film preventing protection cover of vacuum air pipe |
| CN104359423A (en) * | 2014-11-18 | 2015-02-18 | 刘杰波 | Surface profile measuring device |
| CN104359423B (en) * | 2014-11-18 | 2017-02-22 | 刘杰波 | Surface profile measuring device |
| CN104878361A (en) * | 2015-06-24 | 2015-09-02 | 安徽纯源镀膜科技有限公司 | Magnetron sputtering coating equipment |
| CN104878361B (en) * | 2015-06-24 | 2017-05-31 | 安徽纯源镀膜科技有限公司 | Magnetic-controlled sputtering coating equipment |
| CN108291293A (en) * | 2015-12-09 | 2018-07-17 | 应用材料公司 | It is configured in the system that sputtering sedimentation is carried out on substrate, the method for the screening arrangement of sputter deposition chamber and for providing electrical shielding in sputter deposition chamber |
| CN110398867A (en) * | 2018-09-06 | 2019-11-01 | 南通繁华新材料科技有限公司 | A kind of electrochromic device and preparation method thereof |
| CN110095911A (en) * | 2018-09-06 | 2019-08-06 | 南通繁华新材料科技有限公司 | A kind of preparation method of electrochromic device |
| CN110398867B (en) * | 2018-09-06 | 2022-08-12 | 南通繁华新材料科技有限公司 | Electrochromic device and preparation method thereof |
| CN109402585A (en) * | 2018-11-30 | 2019-03-01 | 浙江上方电子装备有限公司 | A kind of magnetic control sputtering vacuum coating equipment that process gas is evenly distributed |
| CN109355636A (en) * | 2018-12-15 | 2019-02-19 | 湖南玉丰真空科学技术有限公司 | A kind of continuous coating production line inlet and outlet room air charging system |
| CN111876742A (en) * | 2020-09-02 | 2020-11-03 | 光驰科技(上海)有限公司 | Sputtering cathode gas distribution system for optical film |
| CN113046710A (en) * | 2021-03-09 | 2021-06-29 | 蓝思科技（长沙）有限公司 | Magnetron sputtering coating uniformity adjusting device and method |
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