CN103123788A - 用于磁头-介质和凹凸体检测的电阻温度传感器 - Google Patents

用于磁头-介质和凹凸体检测的电阻温度传感器 Download PDF

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CN103123788A
CN103123788A CN2012104646324A CN201210464632A CN103123788A CN 103123788 A CN103123788 A CN 103123788A CN 2012104646324 A CN2012104646324 A CN 2012104646324A CN 201210464632 A CN201210464632 A CN 201210464632A CN 103123788 A CN103123788 A CN 103123788A
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magnetic head
temperature
medium
transducer
head transducer
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G·J·昆克尔
H·娄
D·麦卡恩
T·W·施特伯
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Seagate Technology LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6011—Control of flying height
    • G11B5/607—Control of flying height using thermal means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/187—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features
    • G11B5/255—Structure or manufacture of the surface of the head in physical contact with, or immediately adjacent to the recording medium; Pole pieces; Gap features comprising means for protection against wear
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B27/00—Editing; Indexing; Addressing; Timing or synchronising; Monitoring; Measuring tape travel
    • G11B27/36—Monitoring, i.e. supervising the progress of recording or reproducing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
    • G11B5/024—Erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3133—Disposition of layers including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/40—Protective measures on heads, e.g. against excessive temperature 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6011—Control of flying height
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/58—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed with provision for moving the head for the purpose of maintaining alignment of the head relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B5/60—Fluid-dynamic spacing of heads from record-carriers
    • G11B5/6005—Specially adapted for spacing from a rotating disc using a fluid cushion
    • G11B5/6011—Control of flying height
    • G11B5/6076—Detecting head-disk contact
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/08—Disposition or mounting of heads or light sources relatively to record carriers
    • G11B7/09—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B7/0948—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following specially adapted for detection and avoidance or compensation of imperfections on the carrier, e.g. dust, scratches, dropouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/121—Protecting the head, e.g. against dust or impact with the record carrier

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  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Adjustment Of The Magnetic Head Position Track Following On Tapes (AREA)
  • Magnetic Heads (AREA)
  • Recording Or Reproducing By Magnetic Means (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
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Abstract

磁头换能器的温度传感器测量靠近点处或附近的温度。测得的温度响应于磁头换能器和磁记录介质之间的间距的改变而变化。检测器耦合于温度传感器并被配置成检测用于指示磁头换能器和介质之间的接触的开始的测得温度的DC分量的变化。另一磁头换能器配置包括传感器，该传感器具有带高电阻温度系数的感测元件，用以与介质的凹凸体相互作用。导电引体连接于感测元件并相对于感测元件的电阻温度系数具有低的电阻温度系数，引体中这样的热诱导电阻变化对于感测元件与凹凸体接触的响应具有可忽略的影响。

Description

用于磁头-介质和凹凸体检测的电阻温度传感器
相关专利文献
本申请要求均于2010年11月17日提交的临时专利申请SN 61/414,733和61/414,734的权益，这些优先权是遵照35U.S.C.§119(e)要求的并各自全部援引包含于此。
发明内容
本公开的实施例针对用于检测磁头-介质接触的装置，该装置包括磁头换能器和位于磁头换能器的接近点处或附近并配置成测量接近点处或附近的温度的温度传感器。测得的温度响应于磁头换能器和磁记录介质之间的间距的改变而改变。检测器耦合于温度传感器并被配置成检测用于指示磁头换能器和介质之间的接触的开始的测得温度的DC分量的变化。
根据其它实施例，一种用于检测磁头-介质接触的方法涉及随着磁记录介质相对于磁头换能器移动而测量在磁头-盘界面处的温度，测得的温度响应于磁头换能器和介质之间的间距的改变而变化。该方法还涉及检测指示磁头换能器和介质之间的接触的开始的测得温度的DC分量的变化。
根据各个实施例，一种装置包括磁头换能器和位于磁头换能器上用以与磁记录介质的凹凸体（asperity）相互作用的传感器。该传感器包括具有高的电阻温度系数的感测元件。导电引体（lead）连接于感测元件。引体相对于感测元件具有低的电阻温度系数，这种引体中热诱导电阻的变化对感测元件对凹凸体的响应具有可以忽略的影响。
根据又一些实施例，一种方法涉及：相对于磁头换能器移动磁记录介质，并使用传感器感测介质的凹凸体，所述传感器包括具有高的电阻温度系数的感测元件，所述感测元件耦合至相对于感测元件具有低的电阻温度系数的导电引体，以使引体中的热诱导电阻的变化对于感测元件对凹凸体的响应具有可忽略的影响。
可鉴于下面的详细描述和附图来理解各实施例的这些和其它的特征和方面。
附图说明
图1是根据各实施例结合温度传感器的加热器致动的磁头换能器结构的简化侧视图；
图2是图1中示出的加热器致动的磁头换能器结构的前视图；
图3示出处于预致动配置和致动配置下的图1和图2的加热器致动的磁头换能器结构；
图4A示出在磁头换能器和磁记录盘的表面之间接触之前、之中和之后图1-3所示类型的加热器致动的记录磁头换能器的代表性温度曲线；
图4B示出在磁头换能器和磁记录盘的表面之间接触之前、之中和之后非热可致动的记录磁头换能器的代表性温度曲线；
图5示出根据各实施例的磁头-介质接触方法的各个过程；
图6示出根据其它实施例的磁头-介质接触方法的各个过程；
图7示出根据各实施例的用于检测磁头-介质接触的装置的视图；
图8A和8B示出根据各实施例的电阻温度传感器；
图8C是图8A和8B所示的传感器元件的分解图；
图9是根据各个实施例的具有提高的凹凸体检测保真度的电阻温度传感器的平面图；以及
图10和图11给出根据各个实施例的展示适用于电阻温度传感器的感测元件的电阻材料的特定温度系数的功效的数据和标绘图。
具体实施方式
数据存储***一般包括将信息读取和写入至记录介质的一个或多个记录磁头。一般希望在记录磁头与其相关联的介质之间具有相对小的距离或间距。该距离或间距被称为“飞行高度”或“磁头-介质间距”。通过减小磁头-介质间距，记录磁头通常能够更好地将数据写至介质和从介质读出数据。减小磁头-介质间距也允许勘察记录介质形貌，例如检测记录介质表面的凹凸体和其它特征。
记录磁头换能器通常被设置成离介质具有最低可靠间距以获得最高记录密度。磁头介质接触检测在设置这种低磁头-介质间距中是关键的。一些传统***使用归因于大偏斜角下的接触摩擦的磁头脱离磁道运动来测量磁头-介质接触。这些***仅在介质表面的内径和外径上有效，并且不具有在介质表面的所有位置测量磁头-介质接触的能力。
其它传统方法使用磁头-盘调制以通过使用磁头换能器上的读取器或附加传感器(例如热传感器)来检测接触。然而，调制使数据记录***劣化，且未来的记录***将不得不取消调制以达成较低的磁性间距和较高的面积密度。目前，没有一种传统***能横跨驱动器中的整个介质表面检测无调制界面的磁头-介质接触。
本公开的实施例涉及配有设置在磁头换能器的接近点处或附近的温度传感器的磁头换能器。接近点一般被理解为磁头换能器和磁记录介质之间的最接近接触点。诸实施例涉及这样的实现：使用温度传感器偏置功率和/或热致动器功率来加热温度传感器以使其显著地比记录介质更热(例如大约100℃和300℃之间地更热，在大约150℃和250℃之间的优选范围内更热，以及在大约150℃和200℃之间的更优选范围内更热)。诸实施例在磁头-介质接触开始时使用介质冷却以产生归因于源自接触事件的热传递速率的猝然变化的温度漂移。由温度传感器测得的温度漂移被用来检测介质的任何位置处(即不限于内径和外径)的磁头-介质接触。
根据各个实施例，磁头-盘界面(HDI)被实现为在磁头-介质接触期间不具有调制。优选地通过对磁头换能器中的电阻温度传感器和/或热致动器使用偏置功率来将界面处的磁头换能器表面温度较佳地上升至显著高于介质温度。介质被用作散热器以在磁头-介质接触开始时冷却磁头换能器，从而产生磁头换能器温度的DC偏移。根据其它实施例，界面处的磁头换能器表面温度可通过降低电阻温度传感器的偏置功率和/或在磁头换能器中使用非热致动器来下降为显著低于介质温度。该方法可提供改进的摩擦发热检测，这可用来宣告磁头-介质接触。由于无调制界面产生占优势的DC信号，因此磁头换能器接近点处的电阻温度传感器测量到DC温度变化。
当磁头换能器开始与介质接触时，由于磁头换能器和介质的高导热性材料的直接接触，热传递速率将具有猝然的增大。在磁头-介质接触开始时热传递速率的猝然变化造成磁头-盘界面处的磁头换能器温度漂移。该DC温度漂移被用来检测磁头-介质接触。
根据各个实施例，并参见图1-3，滑块100被图示为由悬置件101支承成紧靠在旋转磁性存储介质160的位置。滑块100支承记录磁头换能器103和热耦合于磁头换能器103的加热器102。加热器102可以是当电流流过加热器102时产生热量的电阻性加热器。加热器102不仅限于电阻性加热器，而是可包括任何类型的加热源。由加热器102产生的热能导致磁头换能器103的热膨胀。该热膨胀能用来减小数据存储***中的磁头-介质间距107。要注意，在一些实施例中，可使用非热致动器来减小磁头-介质间距107。
温度传感器105图示为在接近点处或附近坐落在磁头换能器103上。如前面描述地，对磁头换能器103的致动可通过热致动器(例如加热器102)或其它致动器(例如写入器)来实现。偏置功率被施加于温度传感器105以使传感器105和磁头换能器103的毗邻部分的表面温度上升为显著高于磁记录介质160的温度。
该温度传感器105优选地配置成感测热流的变化以检测磁头介质接触的开始。在2010年11月8日提交的共同享有的美国专利申请S/N12/941,461中给出了根据本公开各个实施例的有关磁头-介质间距和接触确定的细节，该文献通过引用纳入于此。
如图3中绘出的那样，在磁头-介质接触前，存在界定于热磁头表面和相对冷的盘160之间的气隙107。磁头换能器103、气隙107和磁记录盘160界定了热传递速率的一个层面。当磁头换能器103与盘160接触时，例如在激活热致动器或加热器102之后，磁头换能器103和盘160的高导热性材料之间的直接接触显著地增大了热传递速率。如此，磁头换能器103上的温度传感器105感测到温度下降或温度轨迹漂移，由此允许对磁头-介质接触的检测。
图4A示出在磁头换能器103和磁记录盘160的表面之间接触之前、之中和之后图1-3所示类型的记录磁头换能器103的代表性温度曲线。在该解说例中，由于低调制或无调制磁头-盘界面，温度曲线被表示为稳态DC信号。当磁头换能器103由热致动器102致动时，由于热致动器102产生的热量，磁头换能器表面温度将随着致动而增加。磁头换能器温度将高于盘160的温度。如此，盘160在这种场合下充当散热器。当磁头换能器103接触盘160时，由于因接触导致的热传递速率的变化，磁头换能器表面温度将下降。由于热致动器发热和摩擦发热，磁头换能器表面温度将持续增加。温度变化或温度轨迹的漂移可用来宣告磁头-介质接触。
图4B示出由非热致动器致动的记录头换能器103的代表性温度曲线。在该解说例中，温度传感器105偏置功率自身加热温度传感器105以使磁头-盘界面处的温度增加至显著高于盘160的温度。盘160在这种场合下充当散热器。当磁头换能器103朝向盘160被向下致动时，热传递速率逐渐增大，这造成传感器105的温度的逐渐减小。当磁头换能器103开始与盘160接触时，将存在热传递速率的改变，这造成磁头换能器表面温度漂移。磁头换能器表面上的温度传感器105测量该温度漂移以检测磁头-介质接触。如果磁头-介质接触进一步发生，则因摩擦生热，温度将最终升高。
现在转向图5，图5示出根据各实施例的磁头-介质接触方法的各个过程；随着磁头换能器相对于磁记录介质移动140，图5A所示的方法涉及测量142磁头-盘界面处的温度，测得的温度响应于磁头换能器和介质之间间距的变化而改变。该方法还涉及检测140指示磁头-介质接触开始的测得温度的DC分量的变化。
图6示出根据其它实施例的磁头-介质接触方法的各个过程；随着磁头换能器相对于磁记录介质移动150，磁头换能器被致动150以使换能器朝向介质移动。在一些实施例中，磁头换能器是使用热致动器致动的。在其它实施例中，使用非热致动器来致动磁头换能器。图6所示的方法还包括将磁头-盘界面加热154至高于介质的温度。优选地，磁头-盘界面比介质的温度显著更热，例如在大约100℃和200℃之间地更热(另见前面给出的温度范围)。
随着磁头-盘界面被加热，测量156磁头-盘界面处的温度，并通过监视测得温度的DC分量来测量界面温度的变化。该方法还涉及检测158指示磁头-介质接触开始的测得温度的DC分量的变化。在一些实施例中，可通过测量测得温度的DC分量的百分比变化并将该百分比变化与阈值进行比较来检测磁头介质接触的开始。例如，DC分量大约1％的变化可指示磁头介质接触开始(例如对于85欧姆的器件而言1欧姆的偏移是典型的，这换算成DC分量大约1.2％的变化)。在其它实施例中，可通过检测测得温度的DC分量的轨迹漂移来检测磁头-介质接触的开始。例如，大于约1％的轨迹偏离可以是磁头介质接触的开始已发生的指标。可考虑其它检测方法，例如检测表示高于DC分量轨迹数据的标准偏差达预定数量个Σ的变化。
图7示出根据各实施例用于检测磁头-介质接触的装置500的视图；要理解，图7中绘出的装置500的数个组件为了简化而不予示出。图7中示出的装置500绘出可协同地运作以实现这里描述的各磁头-介质接触方法的各个组件。在该图中，控制***502图示为耦合于包含任何数量的硬盘驱动器504的大容量存储设备。图7是图1所示的滑块100的再现，滑块100支承配有温度传感器105的磁头换能器103，所述记录头换能器103与旋转磁性存储介质160的表面相隔一定距离。控制***502图示为包括控制器514、检测器512以及电源510。控制器514被配置成与装置500的各个组件协同工作，以例如在读和写操作期间控制介质160的旋转和滑块100的移动。电源510向装置500的各个组件提供电力。在各实施例的上下文中，电源510被配置成将偏置功率提供给温度传感器105和向磁头换能器致动器提供致动功率。例如，电源510向加热器102供电，该加热器102作为磁头换能器103的热致动器工作。
温度传感器105坐落在磁头换能器105的接近点处或附近并测量该位置处的温度。该温度传感器105优选地是具有一电阻温度系数(TCR)的传感器。该温度传感器105可具有正TCR或负TCR。可采用其它形式的温度传感器104，例如热电偶或热敏电阻。
如之前讨论的，测得的温度响应于磁头换能器103和磁记录介质160之间的间距的改变而变化。检测器512耦合于温度传感器105并被配置成检测指示磁头换能器103和介质160之间的接触开始的测得温度的DC分量的变化。由于磁头-盘界面是低调制界面或无调制界面，因此由温度传感器105产生的温度信号在磁头-介质接触期间实质上缺乏变化的信号分量。更具体地，温度信号在磁头-介质接触期间实质上缺乏AC分量。尽管可能存在温度信号的小RMS分量，但任何这样的RMS分量在依赖于磁头-盘调制的传统接触检测方案的上下文中是不可用的。
根据一些实施例，通过电源510将功率提供给温度传感器105以将磁头-盘界面加热至高于介质160温度的温度。在其它实施例中，通过电源510将功率提供给温度传感器105和加热器102两者，从而向磁头-盘界面提供加热。检测器512被配置成检测由温度传感器105产生的信号的DC分量变化，所述DC分量变化指示响应于磁头换能器103和介质160之间的接触开始从受热的磁头-盘界面至介质160的增加的热传递速率。
在磁记录中，磁头和介质之间的间隙的控制对于成功的读操作和写操作来说是重要的。增加的面积密度需要减小的磁头-介质间隙。介质物理凹凸体可通过接触磁头并导致磁头换能器结构的磨损和磁头电气性能劣化而提供平均磁头-介质间距的下限。
凹凸体是隔离的亚微米尺寸微粒，通常包括嵌入到盘衬底中的碳化硅材料。凹凸体经常大到足以通过与处于非常高速度的滑块/换能器组件碰撞而干扰典型滑块/换能器组件的飞行路径。从磁记录介质表面产生的凹凸体一般以高度随机的方式分布，并响应于盘温度和环境温度的改变而在形状和尺寸上改变。滑块/换能器组件和凹凸体之间的冲突经常使凹凸体的位置不可用于读/写信息的目的。此外，滑块/换能器组件和凹凸体之间的重复接触可造成对滑块/换能器组件不同严重性的损伤。
可使用介质凹凸体检测以通过映射介质凹凸体来向磁头提供控制算法以避开介质上的这些部位，由此使磁头磨损和劣化最小化。随着介质凹凸体与磁头相互作用，它们提供磁头上的时变温度分布。该时变温度信号可通过用TCR传感器元件监测设备的电阻来检测出。本公开的实施例提供高保真的介质凹凸体检测传感器。本公开的实施例提供一种高保真TCR感测设备，用于检测介质凹凸体以减小磁头平均间距(HMS)和增加面积密度。
根据各实施例，电阻温度传感器包括坐落在磁头换能器上并被配置成检测介质凹凸体的传感器元件。传感器元件优选地由具有高电阻温度系数的材料形成。至感测元件的电连接通过导电引体提供，该导电引体包括具有相对于传感器元件较低的电阻温度系数的材料。导电引体优选地是由具有接近零的电阻温度系数的材料形成。除了其它优点外，本公开的电阻温度传感器提供增强的接触检测。在介质缺陷扫描期间，例如磁头-介质间隙——以及由此的加热器功率——是固定的，这意味着作为结果的热背景是固定的。然而，在接触检测期间，加热器是斜变的，因此本公开的低TCR引体在接触检测应用中提供特殊效用。
图8A和8B示出根据各实施例的电阻温度传感器200。图8A示出电阻温度传感器200的平面图。图8B是图8A所示的电阻温度传感器200的气承表面图。电阻温度传感器200包括连接于一对引体204的传感器元件202。传感器元件202的表面203在图8A中示出为大致平行地对准于磁头换能器的气承表面(ABS)205，其中磁头换能器和磁记录介质之间的温度梯度是最大的。因此，同在与ABS表面屏蔽开的滑块本体内具有多得多TCR材料的传统设计相比，这种传感器元件202中电阻的较大变化将伴随有ABS表面温度变化。
相对于例如传统磁头-介质接触传感器，传感器元件202对越过小感测面积的热流的变化敏感。因此，传感器元件202对热流的变化具有较大的敏感度，用以检测磁记录介质的凹凸体。注意，典型的磁头-介质接触传感器相对于传感器元件202对跨过大感测面积的热流的变化敏感。
图8C是图8A和8B所示的传感器元件202的分解图；在图8C中，感测器元件202图示为具有跨磁道长度(L)、滑块本体内深度(D)以及向下磁道宽度(W)。根据一些实施例，传感器元件202可具有下列几何形状：L=750nm;D=75nm;且H=60nm。在其它实施例中，传感器元件202可具有下列几何形状：L=750nm;D=85nm;且H=40nm。要理解，图8C所示的传感器元件202的配置和几何形状用于非限定性解说目的。相对较小的传感器元件202能例如确定准确磁道填料的小凹凸体的几何形状。
图9是根据各个实施例的具有改进的介质缺陷检测保真的电阻温度传感器300的平面图。在图9所示的实施例中，电阻温度传感器300包括具有平行于磁头换能器的气承表面310的显著长度尺寸的传感器结构301。图9所示的电阻温度传感器300的传感器结构301具有坐落在气承表面310上的相当数量的TCR材料。传感器结构301中可观部分沿每个引体304的表面306’延伸。传感器结构301具有位于两个引体304之间的间隙中的界定传感器元件302的相对薄的区段。
传感器元件302具有大致“鸥型翼”形状，且传感器元件302位于传感器结构301的中央位置。传感器结构301包括在传感器元件302的相对端上的锥形区域307。传感器结构301的相对端区域具有锥形区域309，该锥形区域309终止在与气承表面310平行的引体306的表面。图9的传感器元件302的鸥型翼形状使得引体材料不接近气承表面。这允许从表面抛光和/或侵蚀稳健性的角度选择可能不为ABS所接受的材料。限制在ABS露出的材料的数量使得能更容易管理表面抛光的磁极尖凸起相关样貌。
根据各实施例，可通过改变传感器***的偏置功率(即电流、功率或电压)——例如通过控制图7所示的电源510——来控制图8A-9所示的传感器元件202和302的温度。当工作在凹凸体检测模式时，例如可使用相对较大的偏置电流来将传感器元件202、302显著地加热至高于环境的温度(即高于盘温度)。例如，传感器元件202和302可包括TCR线或结构，该TCR线或结构工作在~100℃的温度下，例如高于磁头换能器温度，由此提供良好的信噪比(SNR)。在一些实施例中，传感器元件202、302的TCR线或结构可在例如高于磁头换能器温度的高达~200℃的温度下工作。要理解，传感器元件202和302的TCR线或结构的工作温度可基于所使用的TCR材料而不同于前面提供的。
如之前讨论的那样，引体202、302优选地包括低或接近零的TCR材料，由此通过减少由引体204、304中的热致电阻变化引起的噪声来提供改善的介质缺陷检测保真度。如图8A-9所示，基于TCR的凹凸体传感器元件202、302优选地位于最靠近气承表面201、310的位置，以提供与介质凹凸体的最大相互作用。适宜的传感器TCR材料包括NiFe、Ni、Ru、Cr和具有相对高TCR的其它材料。连接于基于TCR的传感器200、300的传感器元件202、302的引体202、302是通过包含具有相对较低或接近零的TCR材料(例如NiCu合金)的导电引体而提供的。
高TCR感测元件202、302和低TCR接触204、304的组合结构提供对介质凹凸体的响应，这种响应不会被引体204、304中的温度诱导电阻变化所混淆。引体204、304中的温度诱导电阻变化引起凹凸体检测SNR中额外的噪声和变形。低或接近零的TCR引体材料提供较高保真的电阻温度传感器200、300以检测介质凹凸体并提供减小的磁头装置间距和增加的面积密度性能。
图10和图11给出根据各实施例的展示适用于TCR感测元件202、302的特殊TCR材料的功效的数据和标绘图。图10、11中所示的数据和标绘图展示了具有100nm厚度的NiCu 50%合金薄膜是很好地适于用来形成图8A-图9所示的基于TCR的传感器200、300的引体204、304的低或接近零的TCR材料。
最后，将理解，尽管在前述的描述中与各实施例的结构和功能的细节一起阐述了各实施例的很多特征，但是，此详细描述只是说明性的，并且可以在细节上作出更改，特别是在表达所附权利要求的术语的广泛的一般含义所指出的完整范围内在各部分的结构和布局方面作出更改。

Claims (22)

1.一种装置，包括：
磁头换能器；
温度传感器，所述温度传感器坐落在所述磁头换能器的附近或接近点处并被配置成测量所述接近点附近或所述接近点处的温度，所测得的温度响应于所述磁头换能器和磁记录介质之间间距的变化而变化；以及
检测器，所述检测器耦合于所述温度传感器并被配置成检测指示所述磁头换能器和介质之间的接触的开始的测得温度的DC分量的变化。
2.如权利要求1所述的装置，其特征在于，所述温度传感器在磁头-介质接触期间产生实质上缺乏调制分量的温度信号。
3.如权利要求1所述的装置，其特征在于，所述温度传感器在磁头-介质接触期间产生实质上缺乏AC分量的温度信号。
4.如权利要求1所述的装置，其特征在于，所述温度传感器包括电阻温度传感器、热电偶和热敏电阻中的一者。
5.如权利要求1所述的装置，其特征在于，包括在磁头-介质接触期间实质上没有调制的磁头-盘界面。
6.如权利要求1所述的装置，其特征在于，包括被配置成致动所述磁头换能器以使所述温度传感器朝所述介质移动的致动器。
7.如权利要求1所述的装置，其特征在于，包括磁头-盘界面，其中：
所述温度传感器被配置成将所述磁头-盘界面加热至高于所述介质温度的温度；以及
所述检测器被配置成检测DC分量的变化，所述DC分量的变化指示响应于所述磁头换能器和所述介质之间的接触的开始从受热的磁头-盘界面至所述介质的增加的热传递速率。
8.如权利要求7所述的装置，其特征在于，所述检测器被配置成检测所述DC分量的轨迹的漂移。
9.如权利要求1所述的装置，其特征在于，包括：
磁头-盘界面；以及
热致动器，所述热致动器被配置成致动所述磁头换能器以使所述温度传感器朝所述介质移动，其中：
所述温度传感器和所述热致动器中的一者或两者被配置成将所述磁头-盘界面加热至高于所述介质温度的温度；以及
所述检测器被配置成检测DC分量变化，所述DC分量变化指示响应于所述磁头换能器和所述介质之间的接触的开始从受热的磁头-盘界面至所述介质的增加的热传递速率。
10.一种方法，包括：
使磁记录介质相对于磁头换能器移动；
测量所述磁头-盘界面处的温度，所测得的温度响应于所述磁头换能器和所述介质之间间距的变化而变化；以及
检测指示所述磁头换能器和所述介质之间的接触的开始的测得温度的DC分量的变化。
11.如权利要求10所述的方法，其特征在于，还包括：
将所述磁头-盘界面加热至高于所述介质温度的温度；以及
检测DC分量的变化，所述DC分量的变化指示响应于所述磁头换能器和所述介质之间的接触的开始从受热的磁头-盘界面至所述介质的增加的热传递速率。
12.如权利要求10所述的方法，其特征在于，所述磁头-盘界面在磁头-介质接触期间实质上没有调制。
13.如权利要求10所述的方法，其特征在于，还包括致动所述磁头换能器以使所述磁头换能器朝所述介质移动。
14.一种装置，包括：
磁头换能器；以及
坐落在所述磁头换能器上的传感器，用以与所述磁记录介质的凹凸体相互作用，所述传感器包括：
感测元件，所述感测元件具有高的电阻温度系数；以及
导电引体，所述导电引体连接于所述感测元件，所述引体相对于所述感测元件具有低的电阻温度系数以使所述引体中的热致电阻变化对于所述感测元件对凹凸体的响应具有可忽略的影响。
15.如权利要求14所述的装置，其特征在于，所述感测元件对凹凸体的响应不被所述引体中的温度诱导电阻变化所混淆。
16.如权利要求14所述的装置，其特征在于，所述引体由具有近零的电阻温度系数的材料构成。
17.如权利要求14所述的装置，其特征在于，所述引体包括NiCu合金薄膜。
18.如权利要求14所述的装置，其特征在于，所述引体包括具有约100nm厚度的NiCu50%的合金薄膜。
19.如权利要求14所述的装置，其特征在于，所述感测元件由包含NiFe、Ni、Ru或Cr的材料构成。
20.如权利要求14所述的装置，其特征在于，还包括耦合至所述传感器并配置成检测凹凸体的检测器。
21.一种方法，包括：
使磁记录介质相对于磁头换能器移动；
使用传感器来感测所述介质的凹凸体，所述传感器包括感测元件，所述感测元件具有耦合至导电引体的高电阻温度系数，所述导电引体具有相对于所述感测元件较低的电阻温度系数，以使所述引体中的热诱导电阻变化对于所述感测元件对凹凸体的响应具有可忽略的影响。
22.如权利要求21所述的方法，其特征在于，所述引体由具有近零的电阻温度系数的材料构成。
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