CN103117737A - Signal-isolating circuit for IGBT (insulated gate bipolar translator) driver - Google Patents
Signal-isolating circuit for IGBT (insulated gate bipolar translator) driver Download PDFInfo
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- CN103117737A CN103117737A CN2013100404161A CN201310040416A CN103117737A CN 103117737 A CN103117737 A CN 103117737A CN 2013100404161 A CN2013100404161 A CN 2013100404161A CN 201310040416 A CN201310040416 A CN 201310040416A CN 103117737 A CN103117737 A CN 103117737A
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Abstract
The invention provides a signal-isolating circuit for an IGBT (insulated gate bipolar translator) driver, and relates to the field of IGBT drivers. An output end of an input buffer circuit is respectively connected with an input end of a totem-pole driving circuit and an input end of a delay buffer circuit. An output end of the delay buffer circuit is connected with the input end of the totem-pole driving circuit. An output end of the totem-pole driving circuit is connected with an input end of an isolation transformer. An output end of the isolation transformer is connected with an input end of a filter circuit. An output end of the filter circuit is connected with an input end of a signal recovery circuit. The signal-isolating circuit can provide smaller signal delay, and has better common-mode rejection capability and low cost.
Description
Technical field:
The present invention relates to a kind of signal isolation circuit for the IGBT driver, be specifically related to do between a kind of linear quadratic control square-wave signal of once controlling the output of square-wave signal and controller at the IGBT driver circuit of isolation.
Background technology:
Therefore high power electronic equipment usually needs to use IGBT as power device, has common-mode voltage between the control signal of IGBT and controller, need to do isolation between the control signal of the driving signal of IGBT and controller.
Drive circuit in the market mainly adopts following several partition method:
1, adopt the high speed photo coupling isolation.This partition method has several shortcomings:
A) cost is higher, and this optocoupler need to reach the requirement of high speed, high-isolating, high common mode inhibition capacity, High Output Current, and manufacturing process is more complicated, so cost is higher.
B) input and output postpone large.Although be high speed photo coupling, postpone mostly between 300 nanosecond to 1 microseconds, large delay can make the control characteristic variation of device, affects overall performance.
C) common mode inhibition capacity is lower, and is basically in the every microsecond of 30kv/us(kilovolt, lower same) below.In some cases, particularly in the situation of cold conditions overcurrent turn-off function, the voltage slope of IGBT can reach 60 kv/us, and the output signal of optocoupler is easy to be interfered and makes mistakes.
2, adopt the pulse transformer isolation, namely use transformer that driving power is transferred to IGBT from secondary side.This isolation scheme can be realized lower delay, higher common mode ability (can reach 50 kv/us), and do not need insulating power supply, but it also has shortcoming:
A) volume of transformer is large.Due to the signal frequency not high (usually below 20 KHz) of pulse transformer transmission, so volume of transformer is larger.
B) common mode inhibition capacity is good not enough.Because volume of transformer is large, former limit winding and secondary umber of turn are more, and therefore the coupling capacitance of former limit and secondary is larger, causes common mode inhibition capacity further to improve.
C) can not transmit low frequency signal.When IGBT is operated in the ovennodulation state, or equipment adopts tri-level circuit, or full-bridge circuit adopts under one pole multiple-frequency modulation pattern, drives the signal that just needs to transmit far below switching frequency.This low frequency signal can make pulse transformer saturated, burns former limit drive circuit, and the secondary output signal also can be made mistakes.
D) can not transmit the high signal of duty ratio.In order to make pulse transformer work in the weber poised state, former limit drive circuit often adopts half-bridge or seals in Capacitor apart, which kind of situation no matter, the voltage that stores on electric capacity is the average voltage of input signal, when the duty ratio of input signal is large, the amplitude of output signal is just lower, can't effectively drive IGBT.
E) the signal edge is precipitous not.Pulse transformer not only will transmit signal, also will transmit simultaneously secondary driving power power demand,, drive this large electric capacity and must make and drive the signal edge and slow down, otherwise will need very large drive current with large electric capacity due to driving power.This will make the loss of IGBT increase to cross slow driving signal.
3, high-frequency impulse modulation transformer isolation method will drive signal and be modulated into that to deliver to pulse transformer after high-frequency signal elementary, and transformer secondary output demodulates the driving signal again, and isolating transformer transmits driving-energy simultaneously.
Its shortcoming is:
A) cost is higher.Need special-purpose integrated circuit, as the UC3724/UC3725 integrated circuit of TI pair.
B) drive current is less.The driving peak current of UC3725 is 1A only, can't drive the IGBT module.
C) the driving delay is still larger, and driving signal edge is precipitous not.The maximum delay of UC3724/UC3725 is 350 nanoseconds (pulses), and driving the signal edge was 90 nanoseconds.
Summary of the invention:
The purpose of this invention is to provide a kind of signal isolation circuit for the IGBT driver, it can provide less signal delay, better common mode inhibition capacity, and cheap cost.
in order to solve the existing problem of background technology, the present invention is by the following technical solutions: it comprises input buffer circuit 1, time-delay buffer circuit 2, totem drive circuit 3, isolating transformer 4, filter circuit 5 and signal be primary circuit 6 also, the output of input buffer circuit 1 respectively with the input of totem drive circuit 3, the input of time-delay buffer circuit 2 connects, and the output of time-delay buffer circuit 2 is connected with the input of totem drive circuit 3, the output of totem drive circuit 3 is connected with the input of isolating transformer 4, the output of isolating transformer 4 is connected with the input of filter circuit 5, the output of filter circuit 5 and the signal also input of primary circuit 6 are connected.
Pwm signal of the present invention is divided into two-way through after input buffer circuit 1, one the tunnel directly enters totem drive circuit 3, enter totem drive circuit 3 after another road process time-delay buffer circuit 2, the two ends of isolating transformer 4 are received in the output of totem drive circuit 3, the output of isolating transformer 4 after filtration after wave circuit 5 filtering entering signal also primary circuit 6 be reduced into pwm signal isolation output.
The present invention can provide less signal delay, better common mode inhibition capacity, and cheap cost.
Description of drawings:
Fig. 1 is structured flowchart of the present invention.
Embodiment:
referring to Fig. 1, this embodiment is by the following technical solutions: it comprises input buffer circuit 1, time-delay buffer circuit 2, totem drive circuit 3, isolating transformer 4, filter circuit 5 and signal be primary circuit 6 also, the output of input buffer circuit 1 respectively with the input of totem drive circuit 3, the input of time-delay buffer circuit 2 connects, and the output of time-delay buffer circuit 2 is connected with the input of totem drive circuit 3, the output of totem drive circuit 3 is connected with the input of isolating transformer 4, the output of isolating transformer 4 is connected with the input of filter circuit 5, the output of filter circuit 5 and the signal also input of primary circuit 6 are connected.
This embodiment pwm signal is divided into two-way through after input buffer circuit 1, one the tunnel directly enters totem drive circuit 3, enter totem drive circuit 3 after another road process time-delay buffer circuit 2, the two ends of isolating transformer 4 are received in the output of totem drive circuit 3, the output of isolating transformer 4 after filtration after wave circuit 5 filtering entering signal also primary circuit 6 be reduced into pwm signal isolation output.
This embodiment can provide less signal delay, better common mode inhibition capacity, and cheap cost.
Claims (1)
1. signal isolation circuit that is used for the IGBT driver, it is characterized in that it comprises input buffer circuit (1), time-delay buffer circuit (2), totem drive circuit (3), isolating transformer (4), filter circuit (5) and signal be primary circuit (6) also, the output of input buffer circuit (1) respectively with the input of totem drive circuit (3), the input of time-delay buffer circuit (2) connects, and the output of time-delay buffer circuit (2) is connected with the input of totem drive circuit (3), the output of totem drive circuit (3) is connected with the input of isolating transformer (4), the output of isolating transformer (4) is connected with the input of filter circuit (5), the output of filter circuit (5) and the signal also input of primary circuit (6) are connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100404161A CN103117737A (en) | 2013-02-02 | 2013-02-02 | Signal-isolating circuit for IGBT (insulated gate bipolar translator) driver |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100404161A CN103117737A (en) | 2013-02-02 | 2013-02-02 | Signal-isolating circuit for IGBT (insulated gate bipolar translator) driver |
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| CN103117737A true CN103117737A (en) | 2013-05-22 |
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| CN2013100404161A Pending CN103117737A (en) | 2013-02-02 | 2013-02-02 | Signal-isolating circuit for IGBT (insulated gate bipolar translator) driver |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111371294A (en) * | 2020-04-03 | 2020-07-03 | 宁波安信数控技术有限公司 | Frequency spectrum shifting MOS drive circuit and method based on digital banner technology |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1129373A (en) * | 1995-02-15 | 1996-08-21 | 陈亚宁 | Simple high-efficiency separated insulated-gate high-power component driving circuit |
| JP2003143831A (en) * | 2001-11-06 | 2003-05-16 | Fuji Electric Co Ltd | Gate drive circuit |
| US20040145407A1 (en) * | 2003-01-24 | 2004-07-29 | Mitsubishi Denki Kabushiki Kaisha | Gate drive device for reducing a surge voltage and switching loss |
| CN101714862A (en) * | 2009-11-16 | 2010-05-26 | 李力生 | Driver for isolating edge signal |
| CN101997420A (en) * | 2010-11-11 | 2011-03-30 | 江苏大学 | Asymmetric half-bridge magnetic coupling drive circuit |
| CN202268797U (en) * | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Circuit for improving performance of isolated driving circuit |
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN203071899U (en) * | 2013-02-02 | 2013-07-17 | 上海双电电气有限公司 | Signal isolating circuit of IGBT driver |
-
2013
- 2013-02-02 CN CN2013100404161A patent/CN103117737A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1129373A (en) * | 1995-02-15 | 1996-08-21 | 陈亚宁 | Simple high-efficiency separated insulated-gate high-power component driving circuit |
| JP2003143831A (en) * | 2001-11-06 | 2003-05-16 | Fuji Electric Co Ltd | Gate drive circuit |
| US20040145407A1 (en) * | 2003-01-24 | 2004-07-29 | Mitsubishi Denki Kabushiki Kaisha | Gate drive device for reducing a surge voltage and switching loss |
| CN101714862A (en) * | 2009-11-16 | 2010-05-26 | 李力生 | Driver for isolating edge signal |
| CN101997420A (en) * | 2010-11-11 | 2011-03-30 | 江苏大学 | Asymmetric half-bridge magnetic coupling drive circuit |
| CN202268797U (en) * | 2011-09-16 | 2012-06-06 | 天水七四九电子有限公司 | Circuit for improving performance of isolated driving circuit |
| CN102594101A (en) * | 2012-02-16 | 2012-07-18 | 江苏大学 | Isolated rapid turn-off metal oxide field effect transistor (MOFET) driving circuit |
| CN203071899U (en) * | 2013-02-02 | 2013-07-17 | 上海双电电气有限公司 | Signal isolating circuit of IGBT driver |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111371294A (en) * | 2020-04-03 | 2020-07-03 | 宁波安信数控技术有限公司 | Frequency spectrum shifting MOS drive circuit and method based on digital banner technology |
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Application publication date: 20130522 |