CN103117201B - The forming method of PECVD device and semiconductor device - Google Patents
The forming method of PECVD device and semiconductor device Download PDFInfo
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- CN103117201B CN103117201B CN201110366072.4A CN201110366072A CN103117201B CN 103117201 B CN103117201 B CN 103117201B CN 201110366072 A CN201110366072 A CN 201110366072A CN 103117201 B CN103117201 B CN 103117201B
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Abstract
A kind of forming method of PECVD device and semiconductor device, wherein, described PECVD device includes PECVD device and plasma generator, described plasma generator includes gas access, plasma generation cavity, radio-frequency electrode and gas outlet, and the gas outlet of described plasma generator is connected with PECVD device.When the forming method of described semiconductor device forms etching stop layer, gas containing etching stop layer constituent is formed the reacting gas containing plasma by plasma generator, pass into PECVD device again, on the substrate be formed with MOS device, form etching stop layer by chemical reaction.The forming method of PECVD device of the present invention and semiconductor device can reduce the number of photons in PECVD device and the charge number in the accumulation of etching stop layer surface, prevent photon and electric charge from the gate oxide of MOS device in substrate causing damage, improve the performance of manufactured semiconductor device.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more specifically, the present invention relates to a kind of PECVD device and utilize PECVD device to form the forming method of semiconductor device.
Background technology
At present, in back segment (back-end-of-line, the BEOL) technique of semiconductor device, when making semiconductor integrated circuit, after semiconductor device is formed, it is necessary to form metal interconnecting layer on semiconductor device layer.Wherein, every layer of metal interconnecting layer includes metal interconnecting wires and insulation material layer, and this is accomplished by above-mentioned insulation material layer is manufactured groove and connecting hole, then deposits metal in above-mentioned groove and connecting hole, the metal of deposition constitutes metal interconnecting wires, generally selects copper as metal interconnecting wires material.Insulation material layer includes etching stop layer, such as silicon nitride layer, also includes forming the interlayer dielectric layer on etching stop layer.Compared with the interlayer dielectric layer on etching stop layer, etching stop layer has much lower etch rate, it is possible to preventing over etching when etching interlayer dielectric layer below to form groove and contact hole, the conductive region surface that protection is positioned under it is not subjected to damage.
The main using plasma of existing technique strengthens chemical vapour deposition technique (PlasmaEnhancedChemicalVaporDeposition, PECVD) Deposited Etch Stop.With reference to Fig. 1, the schematic diagram of PECVD device during for existing technique by PECVD Deposited Etch Stop, including: settling chamber 101, is arranged at the processing pedestal 103 bottom settling chamber 101, is positioned at the radio-frequency electrode 105 at top, settling chamber 101, intake channel 107 and exhaust channel 109.Wherein, described processing pedestal 103 is for placing the to be processed substrate 111 having been formed with MOS device；Described intake channel 107 is for passing into the gas containing etching stop layer constituent to settling chamber 101；Described radio-frequency electrode 105 is connected with external radio frequency power supply, it is possible to discharge in settling chamber 101, by the gas ionization containing etching stop layer constituent.
With reference to Fig. 2, for utilizing in Fig. 1 the flow chart of etching stop layer in PECVD device deposited semiconductor device, including: S11, will be formed with the substrate of MOS device and be placed in settling chamber；S12, reacting gas containing etching stopping layer film constituent is passed into described settling chamber, and radio-frequency electrode is connected with radio-frequency power supply, by radio-frequency power supply, the reacting gas containing etching stopping layer film constituent is formed plasma, over the substrate Deposited Etch Stop；S13, will be formed with the substrate of etching stop layer and is taken out by settling chamber.
Radio-frequency electrode is being loaded radio-frequency power supply, make the reacting gas containing etching stopping layer film constituent be formed in the process of plasma by arc discharge and can produce photon, the gate oxide of MOS device in damage substrate, the performance of the manufactured semiconductor device of impact.Simultaneously, reacting gas containing etching stopping layer film constituent can produce substantial amounts of electric charge in the process forming plasma, and then form electric field at substrate surface, and the gate oxide of MOS device in damage substrate, cause the less reliable of the drift of manufactured performance of semiconductor device and device.
It has also been found that more forming method about semiconductor device in the Chinese patent application that publication number is CN101447472A.
Therefore, how to avoid damage to the gate oxide of MOS device in substrate when forming etching stop layer, just become problem demanding prompt solution.
Summary of the invention
The problem that this invention address that is to provide the forming method of a kind of PECVD device and semiconductor device, when improving the etching stop layer that existing technique passes through PECVD deposited semiconductor device, the photon that produces and etching stop layer surface accumulate substantial amounts of electric charge to substrate in the gate oxide of MOS device cause damage, improve the performance of manufactured semiconductor device.
For solving the problems referred to above, the invention provides a kind of PECVD device, including: PECVD device and plasma generator, wherein, described plasma generator includes gas access, plasma generation cavity, radio-frequency electrode and gas outlet, and the gas outlet of described plasma generator is connected with PECVD device.
Optionally, the plasma generator being connected with described PECVD device is two, and described PECVD device comprises two intake channels, and described plasma generator is connected with the intake channel of PECVD device by gas outlet.
Optionally, described PECVD device includes: settling chamber, be arranged at the processing pedestal bottom settling chamber, intake channel and exhaust channel.
Accordingly, present invention also offers the forming method of a kind of semiconductor device applying above-mentioned PECVD device, including:
First reacting gas is passed into the first plasma generator, the second reacting gas is passed into the second plasma generator, form the first reacting gas containing plasma and the second reacting gas containing plasma respectively；
Will be formed with the substrate of MOS device and be placed in settling chamber, and described the first reacting gas containing plasma and the second reacting gas containing plasma are passed in PECVD device, by the chemical reaction of the first reacting gas and the second reacting gas, Deposited Etch Stop over the substrate；
The substrate having been formed with etching stop layer is taken out by PECVD device.
Optionally, the power of the radio-frequency power supply of radio-frequency electrode is passed in described first plasma generator in 100 to 1500W scope；Pass in described second plasma generator the power of the radio-frequency power supply of radio-frequency electrode in 100 to 1500W scope.
Optionally, the flow of the first reacting gas of described first plasma generator is passed in 100 to 1000sccm scope；Pass into the flow of the second reacting gas of described second plasma generator in 100 to 1000sccm scope.
Optionally, the material of described etching stop layer is silicon nitride.
Optionally, described first reacting gas is the mixing gas of gas carrier and silicon-containing gas；Described second reacting gas is the mixing gas of gas carrier and nitrogenous gas.
Optionally, gas carrier is the one in helium or nitrogen.
Optionally, described silicon-containing gas is the one in silane, trimethyl silane or tetramethylsilane.
Optionally, described nitrogenous gas is the one in ammonia or hydrazine.
Optionally, the temperature deposited during described etching stop layer in PECVD device is in 300 to 400 degree Celsius range.
Optionally, the pressure deposited during described etching stop layer in PECVD device is in 1 to 7Torr scope.
Compared with prior art, the invention have the advantages that the gas containing etching stopping layer film constituent is first formed plasma by radio-frequency power supply by the forming method of the semiconductor device of PECVD device of the present invention and application PECVD device in ion generator, then pass into PECVD device again.Utilize the reacting gas forming plasma that the characteristic of chemical reaction easily occurs, the substrate be formed with MOS device forms etching stop layer by chemical reaction.Due in the process of chemical reaction, described PECVD device does not carry out arc discharge, when effectively reducing the existing forming method Deposited Etch Stop utilizing PECVD device or semiconductor device, because in settling chamber number of photons is too many and on etching stop layer stored charge number is too many and gate oxide damage of MOS device in the substrate that causes, improve the performance of manufactured semiconductor device.
Accompanying drawing explanation
Fig. 1 is that existing technique passes through the schematic diagram of PECVD device during PECVD Deposited Etch Stop；
Fig. 2 utilizes in Fig. 1 the flow chart of etching stop layer in PECVD device deposited semiconductor device；
Fig. 3 is a kind of embodiment schematic diagram of PECVD device of the present invention；
Fig. 4 utilizes PECVD device in Fig. 3 to form the flow chart of semiconductor device.
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Elaborating a lot of detail in the following description so that fully understanding the present invention, but the present invention can also adopt other to be different from alternate manner described here to be implemented, therefore the present invention is not by the restriction of following public specific embodiment.
Just as described in the background section, when utilizing the etching stop layer of existing PECVD device deposited semiconductor device, photon can be produced and on etching stop layer, accumulate too much electric charge when the gas containing etching stop layer constituent being formed in settling chamber plasma by radio-frequency electrode, photon in settling chamber and accumulate too much electric charge on etching stop layer and the gate oxide of MOS device in substrate can be caused damage, so manufactured performance of semiconductor device is drifted about, the less reliable of device.
For the problems referred to above, inventor provide a kind of PECVD device, reduce when utilizing etching stop layer in PECVD deposited semiconductor device in PECVD device number of photons and accumulate on charge number on substrate, improving the performance of manufactured semiconductor device.
With reference to Fig. 3, for PECVD device schematic diagram of the present invention, including PECVD device and two plasma generators (the first plasma generator and the second plasma generator), wherein, PECVD device includes: settling chamber 201, be arranged at the processing pedestal 203 bottom settling chamber 201, intake channel 207 and exhaust channel 209.Described processing pedestal 203 is for placing the to be processed substrate 211 being formed with MOS device.First plasma generator includes: plasma generation cavity 301, radio-frequency electrode 305, gas access 307 and gas outlet 309.Second plasma generator includes: plasma generation cavity 401, radio-frequency electrode 405, gas access 407 and gas outlet 409.The gas outlet 309 of described first plasma generator and the gas outlet 409 of the second plasma generator are connected with PECVD device by the intake channel 207 of PECVD device.
In the particular embodiment, the radio-frequency electrode 305 of the first plasma generator is connected with external radio frequency power supply (not shown) with the radio-frequency electrode 405 of the second plasma generator, being ionized by the reacting gas being passed into plasma generation cavity 301 and plasma generation cavity 401 by gas access 307 and gas access 407 respectively, each self-forming comprises the reacting gas of plasma.Form the reacting gas of plasma by the first plasma generator and the second plasma generator pass into the intake channel 207 of PECVD device respectively through gas outlet 309 and gas outlet 409 and enter settling chamber 201.Pass into reacting gas generation chemical reaction in settling chamber 201, that form plasma, Deposited Etch Stop on the substrate 211 being formed with MOS device being positioned on processing pedestal 203.
With reference to Fig. 4, for utilizing PECVD device in Fig. 3 to form the flow chart of semiconductor device, said method comprising the steps of:
Step S21, passes into the first reacting gas the first plasma generator, the second reacting gas is passed into the second plasma generator, forms the first reacting gas containing plasma and the second reacting gas containing plasma respectively；
Step S22, will be formed with the substrate of MOS device and be placed in PECVD device, and described the first reacting gas containing plasma and the second reacting gas containing plasma are passed in PECVD device, by chemical reaction Deposited Etch Stop over the substrate；
Step S23, takes out the substrate having been formed with etching stop layer by PECVD device.
Below in conjunction with accompanying drawing the technical scheme being further illustrated method for forming semiconductor devices of the present invention by detailed description of the invention.
Below in conjunction with PECVD device in Fig. 3 to be formed with the deposited on substrates silicon nitride etch stop layer of MOS device so that the forming method of semiconductor device of the present invention to be described.
Described first reacting gas is the mixing gas of gas carrier and silicon-containing gas, and described second reacting gas is the mixing gas of gas carrier and nitrogenous gas.Described gas carrier is the one in helium or nitrogen, and described silicon-containing gas is the one in silane, trimethyl silane or tetramethylsilane, and described nitrogenous gas is the one in ammonia or hydrazine.
First, first reacting gas is passed into plasma generation cavity 301 by the gas access 307 of the first plasma generator, first reacting gas is ionized by the radio-frequency electrode 305 being connected with external radio frequency power supply (not shown) by arc discharge, forms the first reacting gas containing plasma.
In like manner, second reacting gas is passed into plasma generation cavity 401 by the gas access 407 of the second plasma generator, second reacting gas is ionized by the radio-frequency electrode 405 being connected with external radio frequency power supply (not shown) by arc discharge, forms the second reacting gas containing plasma.
In the particular embodiment, pass in the first plasma generator the power of the radio-frequency power supply of radio-frequency electrode 305 in 100 to 1500W scope, pass in the second plasma generator the power of the radio-frequency power supply of radio-frequency electrode 405 in 100 to 1500W scope.The flow of the first reacting gas of the first plasma generator is passed in 100 to 1000sccm scope by gas access 307；The flow of the second reacting gas of described second plasma generator is passed in 100 to 1000sccm scope by gas access 407.
Then, the to be processed substrate 211 being formed with MOS device is placed on the processing pedestal 203 bottom settling chamber 201, the first reacting gas containing plasma is entered settling chamber 201 by the intake channel 207 being connected with gas outlet 309, the second reacting gas containing plasma is entered settling chamber 201 by the intake channel 207 being connected with gas outlet 409.
In settling chamber 201, the first reacting gas containing plasma and the second reacting gas generation chemical reaction containing plasma, Deposited Etch Stop on the substrate 211 be formed with MOS device.
During cvd nitride etch stop layer, in PECVD device, the temperature in settling chamber 201 is in 300 to 400 degree Celsius range, and the pressure in settling chamber 201 is in 1 to 7Torr scope.
Finally, the substrate 211 having been formed with silicon nitride etch stop layer is taken out by PECVD device.
To sum up, the invention provides a kind of PECVD device and the forming method of application PECVD device formation semiconductor device, first the gas containing etching stopping layer film constituent is formed plasma by radio-frequency power supply in ion generator, then pass into PECVD device again.Utilize the reacting gas forming plasma that the characteristic of chemical reaction easily occurs, the substrate be formed with MOS device forms etching stop layer by chemical reaction.Due in chemical reaction process, described PECVD device does not carry out arc discharge, when effectively reducing the existing forming method Deposited Etch Stop utilizing existing PECVD device or semiconductor device, because in settling chamber number of photons is too many and on etching stop layer stored charge number is too many and gate oxide damage of MOS device in the substrate that causes, improve the performance of manufactured semiconductor device.
Disclose as above with preferred embodiment although the present invention is own, but the present invention is not limited to this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. apply the method that PECVD device forms semiconductor device for one kind, it is characterised in that described PECVD device includes:
PECVD device and plasma generator, wherein, described plasma generator includes gas access, plasma generation cavity, radio-frequency electrode and gas outlet, the gas outlet of described plasma generator is connected with PECVD device, that described gas access is passed into by described radio-frequency electrode by arc discharge, be used for being formed the gas ionization of etching stop layer；The plasma generator being connected with described PECVD device is two, and described PECVD device comprises two intake channels, and the gas outlet of described plasma generator is connected with the intake channel of PECVD device；
Described forming method includes:
First reacting gas is passed into the first plasma generator, the second reacting gas is passed into the second plasma generator, form the first reacting gas containing plasma and the second reacting gas containing plasma respectively；
Will be formed with the substrate of MOS device and be placed in PECVD device, and described the first reacting gas containing plasma and the second reacting gas containing plasma are passed in PECVD device, by the chemical reaction of the first reacting gas and the second reacting gas, Deposited Etch Stop over the substrate；
The substrate having been formed with etching stop layer is taken out by PECVD device.
2. the as claimed in claim 1 method forming semiconductor device, it is characterised in that pass in described first plasma generator the power of the radio-frequency power supply of radio-frequency electrode in 100 to 1500W scope；Pass in described second plasma generator the power of the radio-frequency power supply of radio-frequency electrode in 100 to 1500W scope.
3. the method forming semiconductor device as claimed in claim 1, it is characterised in that pass into the flow of the first reacting gas of described first plasma generator in 100 to 1000sccm scope；Pass into the flow of the second reacting gas of described second plasma generator in 100 to 1000sccm scope.
4. the method forming semiconductor device as claimed in claim 1, it is characterised in that the material of described etching stop layer is silicon nitride.
5. the method forming semiconductor device as claimed in claim 4, it is characterised in that described first reacting gas is the mixing gas of gas carrier and silicon-containing gas；Described second reacting gas is the mixing gas of gas carrier and nitrogenous gas.
6. the method forming semiconductor device as claimed in claim 5, it is characterised in that described gas carrier is the one in helium or nitrogen.
7. the method forming semiconductor device as claimed in claim 5, it is characterised in that described silicon-containing gas is the one in silane, trimethyl silane or tetramethylsilane.
8. the method forming semiconductor device as claimed in claim 5, it is characterised in that described nitrogenous gas is the one in ammonia or hydrazine.
9. the method forming semiconductor device as claimed in claim 4, it is characterised in that the temperature deposited during described etching stop layer in PECVD device is in 300 to 400 degree Celsius range.
10. the method forming semiconductor device as claimed in claim 4, it is characterised in that the pressure deposited during described etching stop layer in PECVD device is in 1 to 7Torr scope.
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| CN201110366072.4A CN103117201B (en) | 2011-11-17 | 2011-11-17 | The forming method of PECVD device and semiconductor device |
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| CN201110366072.4A CN103117201B (en) | 2011-11-17 | 2011-11-17 | The forming method of PECVD device and semiconductor device |
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| CN103117201A CN103117201A (en) | 2013-05-22 |
| CN103117201B true CN103117201B (en) | 2016-06-29 |
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| CN109564987B (en) * | 2017-06-26 | 2021-06-11 | 深圳市柔宇科技股份有限公司 | Plasma apparatus and plasma processing method |
| CN107267957B (en) * | 2017-06-28 | 2020-02-07 | 武汉华星光电技术有限公司 | Device for chemical vapor deposition and chemical vapor deposition method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1882712A (en) * | 2003-09-05 | 2006-12-20 | 通用电气公司 | Replaceable plate expanded thermal plasma apparatus and method |
| CN101393869A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Forming method for silicon nitride film and contact etching stop layer |
| CN101447472A (en) * | 2007-11-27 | 2009-06-03 | 中芯国际集成电路制造(上海)有限公司 | Etch stop layer, double-mosaic structure and forming method thereof |
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| US7255774B2 (en) * | 2002-09-26 | 2007-08-14 | Tokyo Electron Limited | Process apparatus and method for improving plasma production of an inductively coupled plasma |
| US6969953B2 (en) * | 2003-06-30 | 2005-11-29 | General Electric Company | System and method for inductive coupling of an expanding thermal plasma |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1882712A (en) * | 2003-09-05 | 2006-12-20 | 通用电气公司 | Replaceable plate expanded thermal plasma apparatus and method |
| CN101393869A (en) * | 2007-09-17 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Forming method for silicon nitride film and contact etching stop layer |
| CN101447472A (en) * | 2007-11-27 | 2009-06-03 | 中芯国际集成电路制造(上海)有限公司 | Etch stop layer, double-mosaic structure and forming method thereof |
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