CN103115720B - 一种硅基单岛结构石英梁谐振式微压力传感器芯片 - Google Patents
一种硅基单岛结构石英梁谐振式微压力传感器芯片 Download PDFInfo
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- CN103115720B CN103115720B CN201310016272.6A CN201310016272A CN103115720B CN 103115720 B CN103115720 B CN 103115720B CN 201310016272 A CN201310016272 A CN 201310016272A CN 103115720 B CN103115720 B CN 103115720B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 72
- 239000010703 silicon Substances 0.000 title claims abstract description 72
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000010453 quartz Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 11
- 239000000853 adhesive Substances 0.000 claims abstract description 4
- 230000001070 adhesive effect Effects 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims description 21
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000010355 oscillation Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract description 2
- 239000003292 glue Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000013461 design Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009993 protective function Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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CN201310016272.6A CN103115720B (zh) | 2013-01-16 | 2013-01-16 | 一种硅基单岛结构石英梁谐振式微压力传感器芯片 |
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CN103115720A CN103115720A (zh) | 2013-05-22 |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103557970B (zh) * | 2013-11-22 | 2015-05-13 | 中国电子科技集团公司第四十九研究所 | 一种静电激励/压阻检测硅微谐振式压力传感器及其制作方法 |
CN103557967B (zh) * | 2013-11-22 | 2015-06-10 | 中国电子科技集团公司第四十九研究所 | 一种硅微谐振式压力传感器芯体及制作方法 |
CN104316255A (zh) * | 2014-10-14 | 2015-01-28 | 秦川机床集团宝鸡仪表有限公司 | 压力传感器限载保护装置 |
CN105301344B (zh) * | 2015-09-24 | 2018-04-13 | 西安电子科技大学 | 基于驱动梁阵列的石英谐振式直流电压传感器芯片 |
CN107976274B (zh) * | 2018-01-18 | 2023-05-23 | 吉林大学 | 一种基于同步共振的压力检测装置及检测方法 |
CN109485011B (zh) * | 2018-11-23 | 2020-11-10 | 北京遥测技术研究所 | 基于Si-Si-Si-玻璃晶圆键合技术的MEMS谐振压力传感器及制造工艺 |
CN109883581B (zh) * | 2019-03-19 | 2020-12-08 | 西安交通大学 | 一种悬臂梁式差动谐振压力传感器芯片 |
CN111579147B (zh) * | 2020-05-29 | 2021-07-06 | 中国科学院半导体研究所 | 谐振式mems差压压力传感器及其制备方法 |
CN112857276B (zh) * | 2021-03-21 | 2023-05-16 | 中北大学 | 声表面波应变传感器及其制备方法 |
CN112964417B (zh) * | 2021-04-09 | 2023-04-14 | 午芯(辽宁省)高科技有限公司 | 一种双动极板电容式压力敏感芯片 |
CN114199418B (zh) * | 2021-11-29 | 2024-05-10 | 北京晨晶电子有限公司 | 石英音叉压力传感器 |
CN116380330B (zh) * | 2023-05-31 | 2023-10-24 | 成都凯天电子股份有限公司 | 一种用于高温的无液体压阻式碳化硅压力传感器 |
CN117928416B (zh) * | 2024-03-22 | 2024-06-07 | 上海拜安传感技术有限公司 | 一种mems光纤表面式应变计 |
Citations (2)
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CN101281071A (zh) * | 2008-05-29 | 2008-10-08 | 北京航空航天大学 | 一种双谐振梁式微机械压力传感器 |
CN102419227A (zh) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | 新型微压力传感器芯片 |
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JP2004132913A (ja) * | 2002-10-11 | 2004-04-30 | Toyo Commun Equip Co Ltd | 感圧素子、及びこれを用いた圧力センサ |
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CN101281071A (zh) * | 2008-05-29 | 2008-10-08 | 北京航空航天大学 | 一种双谐振梁式微机械压力传感器 |
CN102419227A (zh) * | 2011-09-13 | 2012-04-18 | 河南省电力公司信阳供电公司 | 新型微压力传感器芯片 |
Non-Patent Citations (1)
Title |
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石英晶体谐振式绝对压力传感器研制;潘安宝等;《传感器与微***》;20081231;第27卷(第1期);第85-86,89页 * |
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Inventor after: Zhao Yulong Inventor after: Zhao Jianhua Inventor before: Zhao Yulong Inventor before: Cheng Rongjun |
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Denomination of invention: Silicon based single island quartz beam resonant micro pressure sensor chip Effective date of registration: 20210129 Granted publication date: 20150513 Pledgee: Xi'an Guoxin micro credit Co.,Ltd. Pledgor: Shaanxi Lin Tak inertia Electric Co.,Ltd. Registration number: Y2021980000882 |
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