CN103107739B - Movable-magnet-type electromagnetism-piezoelectricity-combined-type broadband energy harvester based on micro-electromechanical systems (MEMS) - Google Patents
Movable-magnet-type electromagnetism-piezoelectricity-combined-type broadband energy harvester based on micro-electromechanical systems (MEMS) Download PDFInfo
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Abstract
The invention relates to a movable-magnet-type electromagnetism-piezoelectricity-combined-type broadband energy harvester based on micro-electromechanical systems (MEMS) and belongs to the field of micro-electromechanical systems. The movable-magnet-type electromagnetism-piezoelectricity-combined-type broadband energy harvester based on the MEMS comprises a frame 1, more than two MEMS electromagnetism-piezoelectricity-combined-type energy harvesting units 11, a tube shell 20, a cover plate 2, a first glass base plate 17 and a second glass base plate 18. Each MEMS electromagnetism-piezoelectricity-combined-type energy harvesting unit comprises a magnet 3, a first coil 4, a mass block 5, a first structural beam 6, a second structural beam 12, a third structural beam 13, a fourth structural beam 14, a first upper electrode layer 7, a second upper electrode layer 8, a lower electrode layer 9, a plumbum-based lanthanumdoped zirconate titanates (PZT) piezoelectric material layer 10, an insulating layer 15 and a second coil 16. Compared with the prior MEMS vibration type energy harvester, the movable-magnet-type electromagnetism-piezoelectricity-combined-type broadband energy harvester based on the MEMS has the advantages of ensuring that preparation of coil materials and piezoelectric materials and an MEMS process achieve a compatible design which is low in cost, has broadband energy harvesting effect and meanwhile can output large voltage and current.
Description
Technical field
The present invention relates to a kind of based on MEMS(Micro-electro-mechanical Systems, MEMS (micro electro mechanical system)) moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator, belong to micro electro mechanical system field.
Background technology
In recent years, along with low energy-consumption electronic device, particularly be applicable to the low-power consumption MEMS sensor in radio sensing network and micro-inertia system and ASIC(Application Specific Integrated Circuit, application-specific integrated circuit (ASIC)) development of chip, make direct capture energy from operational environment become possibility to supply devices function.
Chemical cell is mainly utilized to power to device in traditional approach, but distinct issues are compared in this energy-provision way existence: the restricted lifetime of (1) chemical cell, certain interval of time needs to change or charging, for the device in remote districts or work in particular surroundings (as in confined space), change battery, the cost that charges the battery is too high or infeasible; (2) chemical cell is comparatively large to the pollution of environment, and meanwhile, process waste battery will cause cost to increase further; (3) volume of chemical cell is comparatively large, cannot use in the system that working space is less; (4) chemical cell cannot realize with MEMS integrated, thus further limit its application in MEMS field.Consider the operational environment of MEMS and the requirement to energy-provision way, if work long hours, to take working space little and can be compatible etc. with MEMS technology, the energy-provision way researching and developing alternative chemical cell has become study hotspot in recent years.
Work out micro-energy of multiple alternative chemical cell at present both at home and abroad, mainly contain the energy-provision way such as oscillating mode energy accumulator, solar cell, thermoelectric cell, but solar cell wherein and thermoelectric cell have harsher requirement to the light in operational environment, temperature etc., and can not work in closed environment, these factors greatly limit their application.Oscillating mode energy accumulator is then a kind of power harvesting device vibrational energy being converted into electric energy, and nearly all device, system are all operated in certain vibration environment, and therefore, the range of application of oscillating mode energy accumulator is boundless.At present, the oscillating mode energy accumulator researched and developed mainly comprises the oscillating mode energy accumulator based on MEMS technology and the vibration of the microminiature based on conventional machining techniques energy accumulator, wherein, because the volume of MEMS energy accumulator is little, and it is integrated to realize with other MEMS sensor, therefore, can be applicable to be MEMS energy supply in radio sensing network and micro-inertia system.
The MEMS oscillating mode energy accumulator worked out at present mainly comprises three types, is the piezoelectric type energy accumulator based on piezoelectric effect, the electromagnetic type energy accumulator based on the law of electromagnetic induction and the electrostatic energy accumulator based on capacitance principle respectively.Due to have volume little, can work long hours, passive energy supply can be realized, and can with the advantage such as MEMS technology is mutually integrated, MEMS oscillating mode energy accumulator has become the study hotspot of MEMS field and micro-energy field in recent years.But also there is the factor that some limit its application in the MEMS energy accumulator worked out at present, such as bandwidth narrower (being generally a few Hz to tens Hz), simultaneously, the energy accumulator of three types has its feature different separately, output voltage as piezoelectric type energy accumulator is larger, but because internal resistance causes more greatly output current less, usually only have several microamperes to tens microamperes; The output current of electromagnetic type energy accumulator is comparatively large, but output voltage only has tens to hundreds of millivolt, cannot meet the power reguirements of conventional device; Electrostatic energy accumulator then needs certain initial voltage normally to work, and thus cannot realize passive energy supply.In addition, because the vibration frequency in operational environment is distributed in certain frequency band range usually, therefore, need the bandwidth of operation widening MEMS energy accumulator, to cover the vibration frequency of whole operational environment, improve prisoner's energy efficiency.So, for the problem existing for current traditional energy-provision way and the MEMS energy accumulator that worked out, research and develop a kind of MEMS oscillating mode energy accumulator simultaneously with broadband, larger output voltage and larger output current and necessitate.
Summary of the invention
The object of the invention is the deficiency existed to solve existing MEMS oscillating mode energy accumulator, proposing a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator, it has broadband prisoner effect also can export larger voltage and larger current simultaneously.
The object of the invention is to be achieved through the following technical solutions.
Based on moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator of MEMS, comprising: frame (1), the MEMS electromagnetism-Piezoelectric anisotropy formula prisoner of more than 2 can unit (11), shell (20), cover plate (2), the first glass substrate (17) and the second glass substrate (18).
Described first glass substrate (17) is fixed on the lower surface of cover plate (2), and the first glass substrate (17) is upper arranges lead-in wire and pad.The effect of described pad realizes the electrical connection with external load.
Described cover plate (2) covers on shell (20), frame (1) is fixed on the inside of shell (20), MEMS electromagnetism-Piezoelectric anisotropy formula the prisoner of described more than 2 can be fixed in frame (1) by unit (11), and MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can not contact with the bottom surface of shell (20) by unit (11).The effect of shell (20) and cover plate (2) is encapsulation frame (1), all MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the first glass substrate and the second glass substrate, can unit (11), the first glass substrate (17) and the second glass substrate (18) shield to frame (1), MEMS electromagnetism-Piezoelectric anisotropy formula prisoner.
Described frame (1) is rectangle or square frame, and its effect is: 1. fix and support whole MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11); 2. lead-in wire and pad is arranged.The effect of described pad realizes the electrical connection with external load.
MEMS electromagnetism-Piezoelectric anisotropy formula the prisoner of described more than 2 can be positioned at same plane and is equidistantly arranged in the inside of frame (1) by unit (11).
Described second glass substrate (18) is fixed in shell (20), is positioned at the below of frame (1) and MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), and the second glass substrate (18) and MEMS electromagnetism-Piezoelectric anisotropy formula are captureed and can not contacted by unit (11).Second glass substrate (18) is upper arranges lead-in wire and pad.
MEMS electromagnetism-Piezoelectric anisotropy formula the prisoner of described more than 2 can work independently by unit (11), also part or all of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be worked after unit (11) serial or parallel connection together.When single MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) can meet frequency band needs, MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can work independently by unit (11); When needs provide high output voltage, part or all of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be connected in series by unit (11); When needs provide High Output Current, part or all of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be connected in parallel by unit (11).
Described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can comprise by unit (11): magnet (3), the first coil (4), mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14), the first upper electrode layer (7), the second upper electrode layer (8), lower electrode layer (9), PZT(lead zirconate titanate) piezoelectric material layer (10), insulating barrier (15), the second coil (16).
Described mass (5) is square or cuboid.
Described first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) are centered by mass (5), be symmetrically distributed in the both sides of mass (5), two root architecture beam parallel arrangements of the every side of mass (5), and one end of every root architecture beam is fixedly connected with frame (1), and the other end is fixedly connected with mass (5); First structural beams (6), the second structural beams (12), the 3rd structural beams (13) are identical with the shape and size of the 4th structural beams (14).The upper surface of the upper surface of mass (5) and the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) is positioned at same level.
The effect of described mass (5) and the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) is: 1. after the shape and size determining mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and magnet (3), and namely determining described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the resonance frequency of unit (11) and response band; 2. mass (5) supports magnet (3), and when there being extraneous vibration signal, mass (5) and magnet (3) vibrate.
The upper surface of described first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5) is insulating barrier (15); The upper surface of the insulating barrier (15) in the first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) is lower electrode layer (9); Lower electrode layer (9) is connected by the upper pad of lead-in wire and frame (1).The upper surface of lower electrode layer (9) is PZT piezoelectric material layer (10); The upper surface of PZT piezoelectric material layer (10) is the first upper electrode layer (7) and the second upper electrode layer (8), between the first upper electrode layer (7) and the second upper electrode layer (8), has certain interval.
Described PZT piezoelectric material layer (10) there is pad.
Described second upper electrode layer (8) there is pad.
Described first upper electrode layer (7) is connected with the pad on PZT piezoelectric material layer (10) by lead-in wire or is connected with the pad on frame (1).
Described second upper electrode layer (8) is connected with the pad on the pad on himself or frame (1) by lead-in wire.
The effect of described PZT piezoelectric material layer (10) is: when mass (5) and magnet (3) vibration, cause the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and PZT piezoelectric material layer (10) flexural deformation, cause producing stress, strain in PZT piezoelectric material layer (10), and then produce electric charge at the upper surface of PZT piezoelectric material layer (10) and lower surface.
Described magnet (3) is fixed on the upper surface of mass (5), and its effect is: 1. provide magnetic field; 2. fit quality block (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) regulate described MEMS electromagnetism-Piezoelectric anisotropy formula to capture resonance frequency and the response band of energy unit (11).
Described first coil (4) is positioned at the top of magnet (3), and be fixed on the lower surface of the first glass substrate (17), when magnet (3) vibrates relative to the first coil (4), magnetic flux in first coil (4) changes, in the first coil (4), produce induced electromotive force, export energy.First coil (4) is planar coil.First coil (4) does not contact with magnet (3).
Described second coil (16) is positioned at the below of mass (5), and be fixed on the upper surface of the second glass substrate (18), when magnet (3) vibrates relative to the second coil (16), when magnetic flux in second coil (16) changes, in the second coil (16), produce induced electromotive force, export energy.Second coil (16) is planar coil.Second coil (16) does not contact with mass (5).
The effect of described first upper electrode layer (7) and the second upper electrode layer (8) is the electric charge collecting the generation of PZT piezoelectric material layer (10) upper surface.
The effect of described lower electrode layer (9) is the electric charge collecting the generation of PZT piezoelectric material layer (10) lower surface.
The effect of described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) is: 1. when there being extraneous vibration effect, produce inertia force by mass (5) and magnet (3) and be applied to the first structural beams (6), second structural beams (12), 3rd structural beams (13), in 4th structural beams (14), make the first structural beams (6), second structural beams (12), 3rd structural beams (13), 4th structural beams (14) and PZT piezoelectric material layer (10) occur bending and deformation, according to piezoelectric effect, on PZT piezoelectric material layer (10), lower surface produces electric charge, realize prisoner can act on, 2. under extraneous effect of vibration, mass (5) and magnet (3) vibrate relative to the first coil (4) and the second coil (16), magnetic flux in first coil (4) and the second coil (16) changes, and then produces electromotive force, and realizing prisoner can act on.
Preparing in the process based on the moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator of MEMS, by optimizing the mass (5) determined in each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), first structural beams (6), second structural beams (12), 3rd structural beams (13), the shape and size of the 4th structural beams (14) and magnet (3), make each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can have different resonance frequencys respectively by unit (11), and each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can have common factor between the frequency response of unit (11), after multiple MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) combination, can realize broadband prisoner can effect.
When the described moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator is operated in the wider frequency range of design, the vibration of different frequency can excite a MEMS electromagnetism-Piezoelectric anisotropy formula prisoner to work by unit (11), reach the effect of vibration prisoner energy, when operating frequency equals the resonance frequency of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), prisoner can best results.
When extraneous vibration causes mass (5) and magnet (3), relative to the first coil (4) and the second coil (16), vibration occurs, according to piezoelectric effect and the law of electromagnetic induction, first structural beams (6), second structural beams (12), 3rd structural beams (13), PZT piezoelectric material layer (10) in 4th structural beams (14) and the first coil (4), second coil (16) is output current simultaneously, voltage, and PZT piezoelectric material layer (10) can export larger voltage, first coil (4) and the second coil (16) then can produce larger electric current, namely by same MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can unit (11) can output HIGH voltage and high electric current simultaneously, realize electromagnetism-Piezoelectric anisotropy formula prisoner can act on.When the piezoelectric modulus of PZT piezoelectric material layer (10) is larger, thickness is thicker, the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) flexural deformation larger time, the voltage of output is larger; When the number of turn of the first coil (4) and the second coil (16) is more, resistance is less, the residual magnetic flux density of magnet (3) is stronger, the first coil (4) is less with the spacing of magnet (3), the spacing of the second coil (16) and mass (5) more hour, the electric current of output is larger.Meanwhile, when the internal resistance that load resistance and MEMS electromagnetism-Piezoelectric anisotropy formula capture energy unit (11) is equal, the power that MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) exports is maximum.
The preparation process of the described moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator is specially:
Step 0: according to the frequency band range of application needs, the working band of design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), and the quantity N of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), N >=2; And determine position, the shape and size of mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and magnet (3) in each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11); According to application required voltage, electric current, design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the thickness of PZT piezoelectric material layer (10) in unit (11), the thickness of the first coil (4) and the second coil (16), live width and distance between centers of tracks; Design the size of frame (1) simultaneously.
Step 1: on the basis that step 0 operates, design, make mask plate, be specially: determine on one piece of complete silicon chip the position of frame (1), N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the position of unit (11) and each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the position of mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) in unit (11); Then polishing is carried out to silicon chip, and by oxidation, silicon dioxide layer is formed to the silicon chip surface of polishing;
Step 2: the upper surface of the silicon chip obtained after processing through step 1 prepares insulating barrier (15) and lower electrode layer (9) successively by sputtering technology;
Step 3: prepare PZT piezoelectric material layer (10) by sol-gel process at the upper surface of lower electrode layer (9);
Step 4: graphical treatment is carried out to PZT piezoelectric material layer, retain the PZT piezoelectric material layer (10) in first structural beams (6) of N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) designed by step 1, the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14), the PZT piezoelectric material layer (10) of remainder on silicon chip is got rid of, and process pad on the PZT piezoelectric material layer (10) remained.
Step 5: on the basis that step 4 operates, retain the lower electrode layer (9) below PZT piezoelectric material layer (10), get rid of the lower electrode layer (9) of remainder on silicon chip;
Step 6: on the basis that step 5 operates, retain the insulating barrier (15) above first structural beams (6) of N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5), get rid of the insulating barrier (15) of remainder on silicon chip;
Step 7: by sputtering technology, on every root architecture beam of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the upper surface of PZT piezoelectric material layer prepares the first upper electrode layer (7) and the second upper electrode layer (8) respectively; Second upper electrode layer (8) processes pad.
Step 8: retain the frame (1) on silicon chip, N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the part of first structural beams (6) of unit (11), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5), get rid of the other parts of silicon chip, and process pad on frame (1).
Step 9: the upper surface of the insulating barrier (15) on the mass (5) of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) fixes a magnet (3) respectively;
Step 10: above prepare N number of first coil (4), N number of second coil (16) of the upper preparation of the second glass substrate (18) at the first glass substrate (17) respectively by electroplating technology; Wherein, N number of first coil (4) lays respectively at the top of N number of magnet (3), and N number of second coil (16) lays respectively at the below of N number of mass (5); And on the first glass substrate (17) and the second glass substrate (18), process pad respectively.
Step 11: the second glass substrate (18) is fixed in shell (20);
Step 12: frame (1) and N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be fixed in shell (20) by unit (11), be positioned at above the second glass substrate (18), and making N number of second coil (16) lay respectively at the below of N number of mass (5), the second coil (16) does not contact with mass (5).
Step 13: the lower surface the first glass substrate (17) being adhered to cover plate (2);
Step 14: top cover plate (2) being fixed on shell (20), and N block first coil (4) that the lower surface of the first glass substrate (17) is adhered to is in the top of N number of magnet (3) respectively, the first coil (4) does not contact with magnet (3).So far described moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator based on MEMS is obtained.
Beneficial effect
The moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator that the present invention proposes, compared with existing MEMS oscillating mode energy accumulator, has the following advantages:
The preparation of coil method, piezoelectric and MEMS technology are realized compatible design by 1. described MEMS electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator, realize two transformation mode of energy and cost is lower in same vibration unit.
2. described moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator based on MEMS has broadband prisoner energy effect, and can export larger voltage and larger current simultaneously.
Accompanying drawing explanation
Fig. 1 is encapsulating package in the specific embodiment of the invention and covering plate structure schematic diagram;
Wherein, 2-cover plate; 17-the first glass substrate; 20-shell.
Fig. 2 is the structural representation of 5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit in the specific embodiment of the invention;
1-frame; 3-magnet; 7-the first upper electrode layer; 8-the second upper electrode layer; 11-MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can unit.
Fig. 3 is the A-A ' generalized section of Fig. 2;
Wherein, 5-mass.
Fig. 4 is 5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit arrangement schematic diagrames in the specific embodiment of the invention;
Fig. 5 is the second coil and the second glass substrate top view in the specific embodiment of the invention;
Wherein, the 16-the second coil; 18-the second glass substrate.
Fig. 6 is the top view of MEMS electromagnetism in the specific embodiment of the invention-Piezoelectric anisotropy formula prisoner energy unit;
Fig. 7 is the bottom view of MEMS electromagnetism in the specific embodiment of the invention-Piezoelectric anisotropy formula prisoner energy unit;
Wherein, the 6-the first structural beams; 12-the second structural beams; 13-the three structural beams; 14-the four structural beams;
Fig. 8 is the B-B ' generalized section of Fig. 6 and the planing surface figure of corresponding first glass substrate of this section and the second glass substrate.
Wherein, the 4-the first coil; 9-lower electrode layer; 10-PZT piezoelectric material layer; 14-the four structural beams; 15-insulating barrier.
Embodiment
Below in conjunction with the drawings and specific embodiments, technical solution of the present invention is described in detail.
Based on the moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator of MEMS, comprising: frame 1,5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can unit 11, shell 20, cover plate 2, first glass substrate 17 and the second glass substrate 18.
Described first glass substrate 17 is fixed on the lower surface of cover plate 2, and the first glass substrate 17 arranges lead-in wire and pad.The effect of described pad realizes the electrical connection with external load.
Described cover plate 2 covers on shell 20, as shown in Figure 1.Frame 1 is fixed on the inside of shell 20, and MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be fixed in frame 1 by unit 11.The effect of shell 20 and cover plate 2 encapsulates frame 1, all MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, first glass substrate and the second glass substrate, shields to frame 1, MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, first glass substrate and the second glass substrate.
The effect of described frame 1 is: 1. fix and support whole MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11; 2. lead-in wire and pad is arranged.
Described second glass substrate 18 is fixed in shell 20, and be positioned at the below of frame 1 and whole MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, the second glass substrate 18 and MEMS electromagnetism-Piezoelectric anisotropy formula are captureed can have certain interval between unit 11.Second glass substrate 18 arranges lead-in wire and pad.
Described 5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be positioned at same plane and is equidistantly arranged in the inside of frame 1 by unit 11, as shown in Figure 4.5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoners can work independently by unit 11.
The structure of described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 comprises: magnet 3, first coil 4, mass 5, first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14, first upper electrode layer 7, second upper electrode layer 8, lower electrode layer 9, PZT piezoelectric material layer 10, insulating barrier 15, second coil 16 as shown in Fig. 2, Fig. 3, Fig. 6, Fig. 7, Fig. 8.
Described mass 5 is cuboid.
Described first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are centered by mass 5, be symmetrically distributed in mass 5 both sides, two root architecture beam parallel arrangements of every side, one end of every root architecture beam is fixedly connected with frame 1, and the other end is fixedly connected with mass 5; First structural beams 6, second structural beams 12, the 3rd structural beams 13, the shape of the 4th structural beams 14, length, width, thickness are identical.The upper surface of the upper surface of mass 5 and the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 is positioned at same level.
The effect of described mass 5 and the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 is: 1. after the shape and size determining mass 5, first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 and magnet 3, and namely determining described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the resonance frequency of unit 11 and response band; 2. mass 5 supports magnet 3, and when there being extraneous vibration signal, mass 5 and magnet 3 vibrate.
The upper surface of described first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 and mass 5 prepares insulating barrier 15; Then in the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 insulating barrier 15 upper surface on prepare lower electrode layer 9; Lower electrode layer 9 is connected with pad on frame 1 by lead-in wire.The upper surface of lower electrode layer 9 prepares PZT piezoelectric material layer 10; The upper surface of PZT piezoelectric material layer 10 is prepared the first upper electrode layer 7 and has certain interval between the second upper electrode layer 8, first upper electrode layer 7 and the second upper electrode layer 8.
Described PZT piezoelectric material layer 10 there is pad.
Described second upper electrode layer 8 there is pad.
Described first upper electrode layer 7 is connected with the pad on PZT piezoelectric material layer 10 by lead-in wire.
Described second upper electrode layer 8 is connected with the pad on himself by lead-in wire.
The effect of described PZT piezoelectric material layer 10 is: when mass 5 and magnet 3 vibrate, cause the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 and PZT piezoelectric material layer 10 flexural deformation, cause producing stress, strain in PZT piezoelectric material layer 10, and then produce electric charge at the upper surface of PZT piezoelectric material layer 10 and lower surface.
Described magnet 3 is fixed on the upper surface of mass 5, and its effect is: 1. provide magnetic field; 2. fit quality block 5, first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 regulate described MEMS electromagnetism-Piezoelectric anisotropy formula to capture resonance frequency and the response band of energy unit 11.
Described first coil 4 is positioned at the top of magnet 3, and is fixed on the lower surface of the first glass substrate 17, when magnet 3 vibrates relative to the first coil 4, when the magnetic flux in the first coil 4 changes, in the first coil 4, produces induced electromotive force, exports energy.First coil 4 is planar coil.Certain interval is had between first coil 4 and magnet 3.
Described second coil 16 is positioned at the below of magnet 3 and mass 5, and is fixed on the upper surface of the second glass substrate 18, as shown in Figure 5.When magnet 3 vibrates relative to the second coil 16, when the magnetic flux in the second coil 16 changes, in the second coil 16, produce induced electromotive force, export energy.Second coil 16 is planar coil.Certain interval is had between second coil 16 and mass 5.
The effect of described first upper electrode layer 7 and the second upper electrode layer 8 is the electric charges collecting the generation of PZT piezoelectric material layer 10 upper surface.
The effect of described lower electrode layer 9 is the electric charges collecting the generation of PZT piezoelectric material layer 10 lower surface.
The effect of described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is: 1. when there being extraneous vibration effect, producing inertia force by mass 5 and magnet 3 is applied in the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14, first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 and PZT piezoelectric material layer 10 are occured bending and deformation, according to piezoelectric effect, produce electric charge on the upper and lower surface of PZT piezoelectric material layer 10, realizing prisoner can act on; 2. under extraneous effect of vibration, mass 5 and magnet 3 vibrate relative to the first coil 4 and the second coil 16, and the magnetic flux in the first coil 4 and the second coil 16 changes, and then produce electromotive force, and realizing prisoner can act on.
The preparation process of the described moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator is specially:
Step 0: according to frequency band range 130Hz to the 250Hz of application needs, the working band of design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 130Hz to 250Hz, and the quantity of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 5; Determine the position of mass 5, first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 and magnet 3 in each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, shape and size; According to application required voltage, electric current, design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the thickness of PZT piezoelectric material layer 10 in unit 11, the thickness of the first coil 4 and the second coil 16, live width and distance between centers of tracks; Design the size of frame 1 simultaneously.
Wherein, in first MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, mass 5 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 100 μm), it is (long: 2mm that the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are cuboid; Wide: 300 μm; Thick: 10 μm), magnet 3 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 1mm); The maximum voltage needed according to application is 1.2V, maximum current is 50 μ A, and the thickness designing PZT piezoelectric material layer 10 in first MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 2 μm, and the thickness of the first coil 4 and the second coil 16 is 5 μm; Live width is 10 μm; Distance between centers of tracks is 10 μm, and the material of the first coil 4 and the second coil 16 is copper.The resonance frequency of first MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 150Hz, and maximum output voltage can reach 3.25V, and maximum output current is 75 μ A.
In second MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, mass 5 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 100 μm), it is (long: 2mm that the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are cuboid; Wide: 400 μm; Thick: 10 μm), magnet 3 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 1mm); The maximum voltage needed according to application is 1.2V, maximum current is 50 μ A, and the thickness designing PZT piezoelectric material layer 10 in second MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 2 μm, and the thickness of the first coil 4 and the second coil 16 is 5 μm; Live width is 10 μm; Distance between centers of tracks is 10 μm, and the material of the first coil 4 and the second coil 16 is copper.The resonance frequency of second MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 172Hz, and maximum output voltage can reach 2.44V, and maximum output current is 86 μ A.
In 3rd MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, mass 5 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 100 μm), it is (long: 2mm that the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are cuboid; Wide: 500 μm; Thick: 10 μm), magnet 3 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 1mm); The maximum voltage needed according to application is 1.2V, maximum current is 50 μ A, and the thickness designing PZT piezoelectric material layer 10 in the 3rd MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 2 μm, and the thickness of the first coil 4 and the second coil 16 is 5 μm; Live width is 10 μm; Distance between centers of tracks is 10 μm, and the material of the first coil 4 and the second coil 16 is copper.The resonance frequency of the 3rd MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 192Hz, and maximum output voltage can reach 1.95V, and maximum output current is 96 μ A.
In 4th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, mass 5 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 100 μm), it is (long: 2mm that the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are cuboid; Wide: 600 μm; Thick: 10 μm), magnet 3 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 1mm); The maximum voltage needed according to application is 1.2V, maximum current is 50 μ A, and the thickness designing PZT piezoelectric material layer 10 in the 4th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 2 μm, and the thickness of the first coil 4 and the second coil 16 is 5 μm; Live width is 10 μm; Distance between centers of tracks is 10 μm, and the material of the first coil 4 and the second coil 16 is copper.The resonance frequency of the 4th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 211Hz, and maximum output voltage can reach 1.63V, and maximum output current is 104 μ A.
In 5th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, mass 5 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 100 μm), it is (long: 2mm that the first structural beams 6, second structural beams 12, the 3rd structural beams 13, the 4th structural beams 14 are cuboid; Wide: 700 μm; Thick: 10 μm), magnet 3 is that cuboid is (long: 1.5mm; Wide: 1.5mm; Thick: 1mm); The maximum voltage needed according to application is 1.2V, maximum current is 50 μ A, and the thickness designing PZT piezoelectric material layer 10 in the 5th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 2 μm, and the thickness of the first coil 4 and the second coil 16 is 5 μm; Live width is 10 μm; Distance between centers of tracks is 10 μm, and the material of the first coil 4 and the second coil 16 is copper.The resonance frequency of the 5th MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 is 230Hz, and maximum output voltage can reach 1.39V, and maximum output current is 114 μ A.
Frame 1 is square, and long is 8mm, and wide is 8mm, and thick is 0.4mm.
Step 1: on the basis that step 0 operates, design, make mask plate, be specially: determine on one piece of complete silicon chip the position of frame 1,5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoners can the position of unit 11 and each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the position of mass 5, first structural beams 6, second structural beams 12, the 3rd structural beams 13 and the 4th structural beams 14 in unit 11; Then polishing is carried out to silicon chip, and by oxidation, silicon dioxide layer is formed to the silicon chip surface of polishing; Step 2: the upper surface of the silicon chip obtained after processing through step 1 prepares insulating barrier 15 and lower electrode layer 9 successively by sputtering technology;
Step 3: prepare PZT piezoelectric material layer 10 by sol-gel process at the upper surface of lower electrode layer 9;
Step 4: graphical treatment is carried out to PZT piezoelectric material layer, retain the PZT piezoelectric material layer 10 in the first structural beams 6, second structural beams 12 of 5 the MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 designed by step 1, the 3rd structural beams 13, the 4th structural beams 14, the PZT piezoelectric material layer 10 of remainder on silicon chip is got rid of, and process pad on the PZT piezoelectric material layer 10 remained.
Step 5: on the basis that step 4 operates, retain the lower electrode layer 9 below PZT piezoelectric material layer 10, get rid of the lower electrode layer 9 of remainder on silicon chip;
Step 6: on the basis that step 5 operates, retain the insulating barrier 15 above the first structural beams 6, second structural beams 12 of 5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, the 3rd structural beams 13, the 4th structural beams 14 and mass 5, get rid of the insulating barrier 15 of remainder on silicon chip;
Step 7: by sputtering technology, on every root architecture beam of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11, the upper surface of PZT piezoelectric material layer prepares the first upper electrode layer 7 and the second upper electrode layer 8 respectively; Second upper electrode layer 8 processes pad.
Step 8: the part retaining the first structural beams 6, second structural beams 12 of frame 1,5 the MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 on silicon chip, the 3rd structural beams 13, the 4th structural beams 14 and mass 5, get rid of the other parts of silicon chip, and process pad on frame 1.
Step 9: the upper surface of the insulating barrier 15 on the mass 5 of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner energy unit 11 fixes a magnet 3 respectively;
Step 10: prepare 5 the first coils 4 respectively by electroplating technology, prepare 5 the second coils 16 on the first glass substrate 17 on the second glass substrate 18; Wherein, 5 the first coils 4 lay respectively at the top of 5 magnet 3, and 5 the second coils 16 lay respectively at the below of 5 masses 5; And on the first glass substrate 17 and the second glass substrate 18, process pad respectively.
Step 11: the second glass substrate 18 is fixed in shell 20;
Step 12: frame 1 and 5 MEMS electromagnetism-Piezoelectric anisotropy formula prisoners can be fixed in shell 20 by unit 11, be positioned at above the second glass substrate 18, and make 5 the second coils 16 lay respectively at the below of 5 masses 5, the second coil 16 does not contact with mass 5.
Step 13: the lower surface the first glass substrate 17 being adhered to cover plate 2;
Step 14: top cover plate 2 being fixed on shell 20, and 5 piece of first coil 4 that the lower surface of the first glass substrate 17 is adhered to is in the top of 5 magnet 3 respectively, the first coil 4 does not contact with magnet 3.So far described moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator based on MEMS is obtained.
Claims (8)
1. based on moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator of MEMS, it is characterized in that: it comprises: frame (1), the MEMS electromagnetism-Piezoelectric anisotropy formula prisoner of more than 2 can unit (11), shell (20), cover plate (2), the first glass substrate (17) and the second glass substrate (18);
Described first glass substrate (17) is fixed on the lower surface of cover plate (2), and the first glass substrate (17) is upper arranges lead-in wire and pad; The effect of described pad realizes the electrical connection with external load;
Described cover plate (2) covers on shell (20), frame (1) is fixed on the inside of shell (20), MEMS electromagnetism-Piezoelectric anisotropy formula the prisoner of described more than 2 can be fixed in frame (1) by unit (11), and MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can not contact with the bottom surface of shell (20) by unit (11); The effect of shell (20) and cover plate (2) is encapsulation frame (1), all MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the first glass substrate and the second glass substrate, can unit (11), the first glass substrate (17) and the second glass substrate (18) shield to frame (1), MEMS electromagnetism-Piezoelectric anisotropy formula prisoner;
Described frame (1) is rectangle or square frame, and its effect is: 1. fix and support whole MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11); 2. lead-in wire and pad is arranged; The effect of described pad realizes the electrical connection with external load;
Described second glass substrate (18) is fixed in shell (20), be positioned at the below of frame (1) and MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the second glass substrate (18) and MEMS electromagnetism-Piezoelectric anisotropy formula are captureed and can not contacted by unit (11); Second glass substrate (18) is upper arranges lead-in wire and pad;
Described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can comprise by unit (11): magnet (3), the first coil (4), mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14), the first upper electrode layer (7), the second upper electrode layer (8), lower electrode layer (9), PZT (lead zirconate titanate) piezoelectric material layer (10), insulating barrier (15), the second coil (16);
Described mass (5) is square or cuboid;
Described first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) are centered by mass (5), be symmetrically distributed in the both sides of mass (5), two root architecture beam parallel arrangements of the every side of mass (5), and one end of every root architecture beam is fixedly connected with frame (1), and the other end is fixedly connected with mass (5); First structural beams (6), the second structural beams (12), the 3rd structural beams (13) are identical with the shape and size of the 4th structural beams (14); The upper surface of the upper surface of mass (5) and the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) is positioned at same level;
The effect of described mass (5) and the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) is: 1. after the shape and size determining mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and magnet (3), and namely determining described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the resonance frequency of unit (11) and response band; 2. mass (5) supports magnet (3), and when there being extraneous vibration signal, mass (5) and magnet (3) vibrate;
The upper surface of described first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5) is insulating barrier (15); The upper surface of the insulating barrier (15) in the first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) is lower electrode layer (9); Lower electrode layer (9) is connected by the upper pad of lead-in wire and frame (1); The upper surface of lower electrode layer (9) is PZT piezoelectric material layer (10); The upper surface of PZT piezoelectric material layer (10) is the first upper electrode layer (7) and the second upper electrode layer (8), between the first upper electrode layer (7) and the second upper electrode layer (8), has certain interval;
The effect of described PZT piezoelectric material layer (10) is: when mass (5) and magnet (3) vibration, cause the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and PZT piezoelectric material layer (10) flexural deformation, cause producing stress, strain in PZT piezoelectric material layer (10), and then produce electric charge at the upper surface of PZT piezoelectric material layer (10) and lower surface;
Described magnet (3) is fixed on the upper surface of mass (5), and its effect is: 1. provide magnetic field; 2. fit quality block (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) regulate described MEMS electromagnetism-Piezoelectric anisotropy formula to capture resonance frequency and the response band of energy unit (11);
Described first coil (4) is positioned at the top of magnet (3), and be fixed on the lower surface of the first glass substrate (17), when magnet (3) vibrates relative to the first coil (4), magnetic flux in first coil (4) changes, in the first coil (4), produce induced electromotive force, export energy; First coil (4) does not contact with magnet (3);
Described second coil (16) is positioned at the below of mass (5), and be fixed on the upper surface of the second glass substrate (18), when magnet (3) vibrates relative to the second coil (16), when magnetic flux in second coil (16) changes, in the second coil (16), produce induced electromotive force, export energy; Second coil (16) does not contact with mass (5);
The effect of described first upper electrode layer (7) and the second upper electrode layer (8) is the electric charge collecting the generation of PZT piezoelectric material layer (10) upper surface;
The effect of described lower electrode layer (9) is the electric charge collecting the generation of PZT piezoelectric material layer (10) lower surface;
The effect of described MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) is: 1. when there being extraneous vibration effect, produce inertia force by mass (5) and magnet (3) and be applied to the first structural beams (6), second structural beams (12), 3rd structural beams (13), in 4th structural beams (14), make the first structural beams (6), second structural beams (12), 3rd structural beams (13), 4th structural beams (14) and PZT piezoelectric material layer (10) occur bending and deformation, according to piezoelectric effect, on PZT piezoelectric material layer (10), lower surface produces electric charge, realize prisoner can act on, 2. under extraneous effect of vibration, mass (5) and magnet (3) vibrate relative to the first coil (4) and the second coil (16), magnetic flux in first coil (4) and the second coil (16) changes, and then generation electromotive force, realizing prisoner can act on,
Preparing in the process based on the moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator of MEMS, by optimizing the mass (5) determined in each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), first structural beams (6), second structural beams (12), 3rd structural beams (13), the shape and size of the 4th structural beams (14) and magnet (3), make each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can have different resonance frequencys respectively by unit (11), and each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can have common factor between the frequency response of unit (11), after multiple MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) combination, broadband prisoner energy effect can be realized,
When the described moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator is operated in the wider frequency range of design, the vibration of different frequency can excite a MEMS electromagnetism-Piezoelectric anisotropy formula prisoner to work by unit (11), reach the effect of vibration prisoner energy, when operating frequency equals the resonance frequency of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), prisoner's energy best results;
When extraneous vibration causes mass (5) and magnet (3), relative to the first coil (4) and the second coil (16), vibration occurs, according to piezoelectric effect and the law of electromagnetic induction, first structural beams (6), second structural beams (12), 3rd structural beams (13), PZT piezoelectric material layer (10) in 4th structural beams (14) and the first coil (4), second coil (16) is output current simultaneously, voltage, and PZT piezoelectric material layer (10) can export larger voltage, first coil (4) and the second coil (16) then can produce larger electric current, namely by same MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can unit (11) can output HIGH voltage and high electric current simultaneously, realize electromagnetism-Piezoelectric anisotropy formula prisoner can act on, when the piezoelectric modulus of PZT piezoelectric material layer (10) is larger, thickness is thicker, the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) flexural deformation larger time, the voltage of output is larger, when the number of turn of the first coil (4) and the second coil (16) is more, resistance is less, the residual magnetic flux density of magnet (3) is stronger, the first coil (4) is less with the spacing of magnet (3), the spacing of the second coil (16) and mass (5) more hour, the electric current of output is larger, meanwhile, when the internal resistance that load resistance and MEMS electromagnetism-Piezoelectric anisotropy formula capture energy unit (11) is equal, the power that MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) exports is maximum.
2. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1, is characterized in that: MEMS electromagnetism-Piezoelectric anisotropy formula prisoner of described more than 2 can be positioned at same plane and be equidistantly arranged in the inside of frame (1) by unit (11).
3. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, it is characterized in that: the MEMS piezoelectric-electrcombinedc combinedc prisoner of described more than 2 can work independently by unit (11), also part or all of MEMS piezoelectric-electrcombinedc combinedc prisoner can be worked after unit (11) serial or parallel connection together; When single MEMS piezoelectric-electrcombinedc combinedc prisoner's energy unit (11) can meet frequency band needs, MEMS piezoelectric-electrcombinedc combinedc prisoner can work independently by unit (11); When needs provide high output voltage, part or all of MEMS piezoelectric-electrcombinedc combinedc prisoner can be connected in series by unit (11); When needs provide High Output Current, part or all of MEMS piezoelectric-electrcombinedc combinedc prisoner can be connected in parallel by unit (11).
4. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, is characterized in that: described first coil (4) and the second coil (16) are planar coil.
5. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, is characterized in that: described PZT piezoelectric material layer (10) has pad.
6. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, is characterized in that: described second upper electrode layer (8) has pad.
7. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, is characterized in that: described first upper electrode layer (7) is connected with the pad on PZT piezoelectric material layer (10) by lead-in wire or is connected with the pad on frame (1).
8. a kind of moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator as claimed in claim 1 or 2, is characterized in that: the preparation process of the described moving magnet type electromagnetism based on MEMS-Piezoelectric anisotropy formula wideband energy accumulator is specially:
Step 0: according to the frequency band range of application needs, the working band of design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), and the quantity N of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), N >=2; And determine position, the shape and size of mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and magnet (3) in each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11); According to application required voltage, electric current, design MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the thickness of PZT piezoelectric material layer (10) in unit (11), the thickness of the first coil (4) and the second coil (16), live width and distance between centers of tracks; Design the size of frame (1) simultaneously;
Step 1: on the basis that step 0 operates, design, make mask plate, be specially: determine on one piece of complete silicon chip the position of frame (1), N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the position of unit (11) and each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the position of mass (5), the first structural beams (6), the second structural beams (12), the 3rd structural beams (13) and the 4th structural beams (14) in unit (11); Then polishing is carried out to silicon chip, and by oxidation, silicon dioxide layer is formed to the silicon chip surface of polishing;
Step 2: the upper surface of the silicon chip obtained after processing through step 1 prepares insulating barrier (15) and lower electrode layer (9) successively by sputtering technology;
Step 3: prepare PZT piezoelectric material layer (10) by sol-gel process at the upper surface of lower electrode layer (9);
Step 4: graphical treatment is carried out to PZT piezoelectric material layer, retain the PZT piezoelectric material layer (10) in first structural beams (6) of N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) designed by step 1, the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14), the PZT piezoelectric material layer (10) of remainder on silicon chip is got rid of, and process pad on the PZT piezoelectric material layer (10) remained;
Step 5: on the basis that step 4 operates, retain the lower electrode layer (9) below PZT piezoelectric material layer (10), get rid of the lower electrode layer (9) of remainder on silicon chip;
Step 6: on the basis that step 5 operates, retain the insulating barrier (15) above first structural beams (6) of N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5), get rid of the insulating barrier (15) of remainder on silicon chip;
Step 7: by sputtering technology, on every root architecture beam of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11), the upper surface of PZT piezoelectric material layer prepares the first upper electrode layer (7) and the second upper electrode layer (8) respectively; Second upper electrode layer (8) processes pad;
Step 8: retain the frame (1) on silicon chip, N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can the part of first structural beams (6) of unit (11), the second structural beams (12), the 3rd structural beams (13), the 4th structural beams (14) and mass (5), get rid of the other parts of silicon chip, and process pad on frame (1);
Step 9: the upper surface of the insulating barrier (15) on the mass (5) of each MEMS electromagnetism-Piezoelectric anisotropy formula prisoner's energy unit (11) fixes a magnet (3) respectively;
Step 10: above prepare N number of first coil (4), N number of second coil (16) of the upper preparation of the second glass substrate (18) at the first glass substrate (17) respectively by electroplating technology; Wherein, N number of first coil (4) lays respectively at the top of N number of magnet (3), and N number of second coil (16) lays respectively at the below of N number of mass (5); And on the first glass substrate (17) and the second glass substrate (18), process pad respectively;
Step 11: the second glass substrate (18) is fixed in shell (20);
Step 12: frame (1) and N number of MEMS electromagnetism-Piezoelectric anisotropy formula prisoner can be fixed in shell (20) by unit (11), be positioned at above the second glass substrate (18), and making N number of second coil (16) lay respectively at the below of N number of mass (5), the second coil (16) does not contact with mass (5);
Step 13: the lower surface the first glass substrate (17) being adhered to cover plate (2);
Step 14: top cover plate (2) being fixed on shell (20), and N block first coil (4) making the lower surface of the first glass substrate (17) adhere to is in the top of N number of magnet (3) respectively, the first coil (4) does not contact with magnet (3); So far described moving magnet type electromagnetism-Piezoelectric anisotropy formula wideband energy accumulator based on MEMS is obtained.
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| CN110061607A (en) * | 2019-05-14 | 2019-07-26 | 深圳市航天华拓科技有限公司 | A kind of the micro-vibration energy collecting device and power-supply management system of underground railway track traffic |
| CN112234860B (en) * | 2020-09-15 | 2022-03-04 | 西安交通大学 | Electromagnetic piezoelectric combined type multi-axis vibration and swing energy capture device |
| CN115268060A (en) * | 2022-07-27 | 2022-11-01 | 杭州士兰微电子股份有限公司 | MEMS micro-mirror and preparation method thereof |
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| CN102931878B (en) * | 2012-10-26 | 2015-01-21 | 北京理工大学 | Multi-cantilever broadband MEMS (micro-electromechanical system) piezoelectric energy harvester |
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