CN103107273A - Light-emitting diode packaging component - Google Patents
Light-emitting diode packaging component Download PDFInfo
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- CN103107273A CN103107273A CN2013100516203A CN201310051620A CN103107273A CN 103107273 A CN103107273 A CN 103107273A CN 2013100516203 A CN2013100516203 A CN 2013100516203A CN 201310051620 A CN201310051620 A CN 201310051620A CN 103107273 A CN103107273 A CN 103107273A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light-emitting diode packaging component. The light-emitting diode packaging component comprises a first wire and an insulation layer which extends from a lateral side of the first wire, a second wire is arranged on the insulation layer and extends on the upper surface and the lower surface of the insulation layer, wherein the second wire is in electric property isolation from the first wire. A light-emitting diode is arranged on the first wire, a first electrode of the light-emitting diode is in electric connection with the first wire, and a second electrode of the light-emitting diode is in electric connection with the second wire. The light-emitting diode is packaged by a sealing rubber layer.
Description
The application is on April 16th, 2010 application, and application number be " 201010165571.2 ", and denomination of invention is the dividing an application of Chinese invention patent application of " LED package and preparation method thereof "
Technical field
The invention relates to a kind of LED package and preparation method thereof, LED package in espespecially a kind of groove that light-emitting diode is arranged at substrate and preparation method thereof.
Background technology
Light-emitting diode (light emitting diode, LED) element, life-span is long, volume is little and the advantages such as power consumption is low owing to having, replace gradually conventional fluorescent fluorescent tube or osram lamp, and be widely used in the aspects such as the backlight module of illumination, liquid crystal display, various electronic product and traffic sign.
With the encapsulation pattern, the encapsulating structure of light-emitting diode is mainly take SMD LED surface-mount device LED (surfacemount device, SMD) package structure for LED as main flow at present.Yet, the substrate that uses due to existing surface-mounting LED packaging structure is planar substrates, and light-emitting diode is the flat surfaces that is arranged at planar substrates, therefore cause the thickness of existing LED package thicker, and do not meet at present for light, thin, short, the little demand of electronic component.
Summary of the invention
One of purpose of the present invention is to provide a kind of LED package and preparation method thereof, with the integral thickness of reduction LED package.
An aspect of of the present present invention provides a kind of manufacture method of LED package, comprises the following steps.One substrate is provided, and this substrate comprises an insulating substrate and is arranged at conductive layer and a lower conductiving layer on one on this insulating substrate, includes a plurality of element regions on this substrate.Patterning respectively in this element region should upper conductive layer and this lower conductiving layer, with one first conductor section and one second conductor section that forms electrical separation, and in this first conductor section respectively should form respectively an opening in upper conductive layer, wherein these opening portions expose this insulating substrate.Removal is arranged in this insulating substrate that this first conductor section respectively exposes and forms a groove.Be electrically connected this respectively on this patterning of this first conductor section conductive layer and this patterning lower conductiving layer to form one first wire.Be electrically connected this respectively on this patterning of this second conductor section conductive layer and this patterning lower conductiving layer to form one second wire.A plurality of light-emitting diodes are arranged at respectively respectively in this groove, and one first electrode of this light-emitting diode respectively and this first wire respectively are electrically connected, and one second electrode of this light-emitting diode respectively and this second wire respectively are electrically connected.Form an adhesive layer and encapsulate these light-emitting diodes on this substrate.Cut this substrate, and form a plurality of LED package.
According to above-mentioned, in one embodiment, wherein respectively this groove exposes this lower conductiving layer of part in this first conductor section respectively.
According to above-mentioned, in another embodiment, the step that wherein forms this first wire is included in respectively and forms conductive pattern in this groove, and on this, conductive pattern is electrically connected this respectively conductive layer and this patterning lower conductiving layer on this patterning of this first conductor section.
According to above-mentioned, in another embodiment, wherein be somebody's turn to do upper conductive pattern respectively between this light-emitting diode and this lower conductiving layer.
According to above-mentioned, in another embodiment, wherein upward conductive pattern and this groove are to form with conformal fashion.
According to above-mentioned, in another embodiment, the step that wherein forms this second wire comprises removing and is arranged in this insulating substrate that this second conductor section respectively exposes and form a through hole and expose the part of this second conductor section respectively should upper conductive layer, and respectively forming conductive pattern in this through hole, this time conductive pattern is electrically connected this respectively conductive layer and this patterning lower conductiving layer on this patterning of this second conductor section.
According to above-mentioned, in another embodiment, wherein these through holes are to utilize the laser drill mode to form.
According to above-mentioned, in another embodiment, wherein respectively this through hole is to lay respectively at a respectively central area at an edge of this second conductor section.
According to above-mentioned, in another embodiment, wherein patterning respectively in this element region should upper conductive layer and step of this lower conductiving layer be to utilize etching mode to carry out.
According to above-mentioned, in another embodiment, wherein these grooves are to utilize the laser drill mode to form.
According to above-mentioned, in another embodiment, also be included in be positioned at this second conductor section respectively should upper conductive layer surface form an identification mark.
According to above-mentioned, in another embodiment, also be included in be positioned at this second conductor section respectively should upper conductive layer surface form an identification mark, wherein this identification mark is positioned at the top of this through hole.
According to above-mentioned, in another embodiment, also be included in respectively and form anti-welding insulating barrier in this element region, a lower surface of this first wire of partial coverage.
According to above-mentioned, in another embodiment, also comprise and carry out the following step.This lower conductiving layer, this insulating substrate of removing four corners district of this element region respectively with should upper conductive layer, to form respectively a through hole in four corners district of this element region respectively.In four corners district of this element region respectively should form respectively anti-welding insulating barrier on upper conductive layer, and make respectively and should cover this corresponding through hole by upper anti-welding insulating barrier.Form a conductive pattern on a sidewall of this through hole respectively, be electrically connected respectively corresponding to this through hole respectively other should upper conductive layer and this lower conductiving layer, forming one first wire in this first conductor section respectively, and in this second conductor section formation, one second wire respectively.
According to above-mentioned, in another embodiment, the another sidewall of this groove respectively and this lower conductiving layer of exposing of this groove respectively of covering of this conductive pattern respectively wherein.
According to above-mentioned, in another embodiment, wherein these conductive patterns and these grooves are to form with conformal fashion.
According to above-mentioned, in another embodiment, wherein these through holes are to utilize the machine drilling mode to form.
According to above-mentioned, in another embodiment, wherein this conductive pattern is to utilize plating mode to form.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at the same side of this light-emitting diode, and this first electrode and this second electrode are respectively by bonding wire and this first wire and the electric connection of this second wire.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at not the same side of this light-emitting diode, and this first wire that this first electrode is direct and this groove is interior is electrically connected, and this second electrode is electrically connected by a bonding wire and this second wire.
The present invention provides a kind of LED package on the other hand, comprises one first wire, and an insulating barrier extends laterally from one of this first wire.One second wire is arranged on this insulating barrier, and extends on a upper surface and a lower surface of this insulating barrier, wherein electrically separates between this second wire and this first wire.One light-emitting diode arranges on this first wire, and wherein one first electrode of this light-emitting diode and this first wire are electrically connected, and one the second electrode and the electric connection of this second wire.One adhesive layer encapsulates this light-emitting diode.
According to above-mentioned, in one embodiment, side this insulating barrier of sandwiched part of this first wire wherein.
According to above-mentioned, in another embodiment, wherein be formed with a groove on this first wire, and this light-emitting diode is to be arranged in this groove.
According to above-mentioned, in another embodiment, wherein this first wire comprises conductive pattern and a lower conductiving layer on one, and on this, conductive pattern forms this groove and is electrically connected with this lower conductiving layer.
Foundation is above-mentioned, in another embodiment, also comprises at least one identification mark, is arranged to be positioned on this second wire.
According to above-mentioned, in another embodiment, also comprise an anti-welding insulating barrier, be arranged at this lower surface of this insulating barrier and a lower surface of this first wire of cover part.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at the same side of this light-emitting diode, and this first electrode and this second electrode are respectively by bonding wire and this first wire and the electric connection of this second wire.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at not the same side of this light-emitting diode, and this first wire that this first electrode is direct and this groove is interior is electrically connected, and this second electrode is electrically connected by a bonding wire and this second wire.
According to above-mentioned, in another embodiment, wherein this groove is an enclosed type groove.
Another aspect of the invention provides a kind of LED package.This LED package comprises an insulating substrate, one first wire, one second wire, a plurality of anti-welding insulating barrier, a light-emitting diode and an adhesive layer.Insulating substrate has a groove, and a plurality of through hole lays respectively at the corner district of insulating substrate.The first conductor part covers a upper surface of insulating substrate and the sidewall of a lower surface and cover part through hole.The second conductor part covers the upper surface of insulating substrate and the sidewall of lower surface and cover part through hole, and the first wire electrically separates with the second wire.Upper anti-welding insulating barrier is a upper surface and the corresponding part through hole of partial coverage the first wire respectively, and the upper surface and the corresponding part through hole that cover the second wire.Light-emitting diode is arranged in groove, and one first electrode of light-emitting diode and the first wire are electrically connected, and one second electrode of light-emitting diode and the electric connection of the second wire.The adhesive layer encapsulation LED.
According to above-mentioned, in one embodiment, wherein this first wire separately covers the sidewall of this groove.
According to above-mentioned, in another embodiment, separately comprise anti-welding insulating barrier, a lower surface of this first wire of partial coverage.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at the same side of this light-emitting diode, and this first electrode and this second electrode are respectively by bonding wire and this first wire and the electric connection of this second wire.
According to above-mentioned, in another embodiment, wherein this first electrode and this second electrode are positioned at not the same side of this light-emitting diode, and this first wire that this first electrode is direct and this groove is interior is electrically connected, and this second electrode is electrically connected by a bonding wire and this second wire.
Further aspect of the present invention provides a kind of manufacture method of LED package, comprises the following steps.One substrate is provided, and this substrate comprises an insulating substrate and is arranged at conductive layer and a lower conductiving layer on one on this insulating substrate, and this substrate includes a plurality of element regions.Patterning is conductive layer and this lower conductiving layer upward, with respectively at forming one first conductor section that electrically separates, one second conductor section and a privates district in this element region respectively, and in this first conductor section respectively should form respectively an opening in upper conductive layer, wherein these opening portions expose this insulating substrate.Remove this insulating substrate that on this, these openings of conductive layer expose, with respectively at forming a groove in this insulating substrate in this first conductor section respectively.Remove respectively this lower conductiving layer and this insulating substrate in four corners district of this element region, to form respectively a through hole in four corners district of this element region respectively, wherein respectively this throughhole portions exposes conductive layer on this.Should form respectively anti-welding insulating barrier on upper conductive layer in the periphery of this element region respectively.Form a conductive pattern on a sidewall of this through hole respectively, be electrically connected respectively corresponding to this through hole respectively expose should upper conductive layer and this other lower conductiving layer of this through hole respectively, to form one first wire in this first conductor section respectively, form one second wire in this second conductor section respectively, and form a privates in this privates respectively district.In respectively in this groove, one first light-emitting diode and one second light-emitting component being set, and one first electrode of this first light-emitting diode respectively and this first wire are electrically connected, making respectively, one second electrode and this second wire of this first light-emitting diode are electrically connected, make respectively one first electrode and the electric connection of this first wire of this second light-emitting diode, and make respectively one second electrode and the electric connection of this privates of this second light-emitting diode.Form an adhesive layer and encapsulate these light-emitting diodes on this substrate.Along this substrate of cutting between these adjacent element regions, to form a plurality of LED package.
According to above-mentioned, in one embodiment, wherein respectively this groove exposes respectively interior this lower conductiving layer of part of this first conductor section.
According to above-mentioned, in another embodiment, the another sidewall of this groove respectively and this lower conductiving layer of exposing of this groove respectively of covering of this conductive pattern respectively wherein.
According to above-mentioned, in another embodiment, wherein these conductive patterns are to form with conformal fashion.
According to above-mentioned, in another embodiment, wherein the step of this upper conductive layer of patterning and this lower conductiving layer is to utilize etching mode to reach.
According to above-mentioned, in another embodiment, wherein these grooves of this insulating substrate are to utilize the laser drill mode to form.
According to above-mentioned, in another embodiment, wherein these through holes are to utilize the laser drill mode to form.
According to above-mentioned, in another embodiment, wherein this conductive pattern is to utilize plating mode to form.
According to above-mentioned, in another embodiment, separately be included on this lower conductiving layer in this first conductor section of this element region respectively and form anti-welding insulating barrier.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this first light-emitting diode and this second electrode are positioned at the same side of this first light-emitting diode, and respectively this first electrode of this first light-emitting diode and this second electrode are to be electrically connected by bonding wire and this first wire and this second wire respectively.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this second light-emitting diode and this second electrode are positioned at the same side of this second light-emitting diode, and respectively this first electrode of this second light-emitting diode and this second electrode are electrically connected by bonding wire and this first wire and this privates respectively.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this first light-emitting diode and this second electrode are positioned at not the same side of this first light-emitting diode, this first wire electric connection that respectively this first electrode of this first light-emitting diode is direct and this groove is interior, this second electrode is electrically connected by a bonding wire and this second wire.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this second light-emitting diode and this second electrode are positioned at not the same side of this second light-emitting diode, this first wire electric connection that respectively this first electrode of this second light-emitting diode is direct and this groove is interior, this second electrode is electrically connected by a bonding wire and this privates.
According to above-mentioned, in another embodiment, wherein respectively should upper anti-welding insulating barrier respectively around this element region respectively.
The present invention provides a kind of LED package on the other hand.This LED package comprises an insulating substrate, one first wire, one second wire, a privates, a plurality of anti-welding insulating barrier, one first light-emitting diode and one second light-emitting diode, and an adhesive layer.Insulating substrate has a groove, and a plurality of through hole lays respectively at the corner district of this insulating substrate.The first conductor part covers a upper surface of this insulating substrate and the sidewall of a lower surface and these through holes of cover part.The second conductor part covers this upper surface of this insulating substrate and the sidewall of this lower surface and these through holes of cover part.The sidewall of this upper surface of this insulating substrate of privates partial coverage and this lower surface and these through holes of cover part, wherein this first wire, this second wire electrically separate with this privates.Upper anti-welding insulating barrier lay respectively at this element region respectively periphery should upper conductive layer on.The first light-emitting diode and the second light-emitting diode are arranged in this groove, wherein one first electrode of this first light-emitting diode and this first wire are electrically connected, one second electrode of this first light-emitting diode and this second wire are electrically connected, one first electrode of this second light-emitting diode and this first wire are electrically connected, and one second electrode of this second light-emitting diode and this privates are electrically connected.Adhesive layer encapsulates this first light-emitting diode and this second light-emitting diode.
According to above-mentioned, in one embodiment, wherein this first wire separately covers the sidewall of this groove.
According to above-mentioned, in another embodiment, separately comprise anti-welding insulating barrier, a lower surface of this first wire of partial coverage.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this first light-emitting diode and this second electrode are positioned at the same side of this first light-emitting diode, and respectively this first electrode of this first light-emitting diode and this second electrode are electrically connected by bonding wire and this first wire and this second wire respectively.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this second light-emitting diode and this second electrode are positioned at the same side of this second light-emitting diode, and respectively this first electrode of this second light-emitting diode and this second electrode are electrically connected by bonding wire and this first wire and this privates respectively.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this first light-emitting diode and this second electrode are positioned at not the same side of this first light-emitting diode, this first wire electric connection that respectively this first electrode of this first light-emitting diode is direct and this groove is interior, this second electrode is electrically connected by a bonding wire and this second wire.
According to above-mentioned, in another embodiment, wherein respectively this first electrode of this second light-emitting diode and this second electrode are positioned at not the same side of this second light-emitting diode, this first wire electric connection that respectively this first electrode of this second light-emitting diode is direct and this groove is interior, this second electrode is electrically connected by a bonding wire and this privates.
According to above-mentioned, in another embodiment, wherein respectively should upper anti-welding insulating barrier respectively around this element region respectively.
According to above-mentioned, in another embodiment, separately comprise anti-welding insulating barrier, be arranged on this lower conductiving layer in this first conductor section of this element region respectively.
Useful technique effect of the present invention is: in LED package of the present invention, light-emitting diode is to be arranged in the groove of substrate, therefore can significantly reduce the integral thickness of LED package.
Description of drawings
Fig. 1 to Fig. 9 has illustrated the schematic diagram of manufacture method of the LED package of the present invention's the first preferred embodiment.
Figure 10 has illustrated the schematic diagram of manufacture method of the LED package of the present invention's the second preferred embodiment.
Figure 11 to Figure 17 has illustrated the schematic diagram of manufacture method of the LED package of the 3rd preferred embodiment of the present invention.
Figure 18 has illustrated the schematic diagram of the LED package of the 4th preferred embodiment of the present invention.
Figure 19 to Figure 26 has illustrated the schematic diagram of manufacture method of the LED package of the 5th preferred embodiment of the present invention.
Figure 27 has illustrated the schematic diagram of the LED package of the 6th preferred embodiment of the present invention.
Embodiment
For making the those skilled in the art that are familiar with the technical field of the invention can further understand the present invention, hereinafter the spy enumerates preferred embodiment of the present invention, and coordinates accompanying drawing to describe constitution content of the present invention and the effect wanting to reach in detail.
Please refer to Fig. 1 to Fig. 9.Fig. 1 to Fig. 9 has illustrated the schematic diagram of manufacture method of the LED package of the present invention's the first preferred embodiment, it is wherein the feature that shows the manufacture method of LED package of the present invention, Fig. 1, Fig. 3, Fig. 5 and look schematic form more than Fig. 7 and illustrate, Fig. 2, Fig. 4, Fig. 6 and Fig. 8 illustrate with the section schematic form, and Fig. 9 illustrates with the outward appearance schematic form.As Fig. 1 and shown in Figure 2, at first provide a substrate 10.In the present embodiment, substrate 10 is a printed circuit board (PCB), but not can be the substrate of other type as limit.Substrate 10 comprises that conductive layer 14 on an insulating substrate (insulating barrier) 12, is arranged at the upper surface of insulating substrate 12, and one lower conductiving layer 16 be arranged at the lower surface of insulating substrate 12, wherein insulating substrate 12 can be various insulating material for example glass fibre (glass fiber) or resin, and upper conductive layer 14 can be for example Copper Foil of various electric conducting material with lower conductiving layer 16, but not as limit.In addition, be formed with many Cutting Roads 18 and a plurality of element regions 20 on substrate 10, wherein each element region 20 comprises one first conductor section 201, one second conductor section 202 and an isolated area 203.Then, removal is positioned at the upper conductive layer 14 of conductive layer 14 and isolated area 203 on the part of the first conductor section 201 of each element region 20, and remove in the lump the part lower conductiving layer 16 of the second conductor section 202 be positioned at each element region 20 and the lower conductiving layer 16 of isolated area 203, to form the part of one first wire 22 and a part that forms one second wire 24 in the second conductor section 202 respectively at the first conductor section 201, and in the interior opening that forms respectively of the upper conductive layer 14 of each the first conductor section 201, wherein opening portion exposes insulating substrate 12.In the present embodiment, on above-mentioned patterning, conductive layer 14 is to carry out with etching mode with the step of patterning lower conductiving layer 16, but not as limit.
As shown in Figure 3 and Figure 4, then remove the first conductor section 201 that is arranged in each element region 20 and expose the insulating substrate 12 of upper surface to form a groove 26, and remove in the lump the insulating substrate 12 that the second conductor section 202 be arranged in each element region 20 exposes lower surface, with respectively at interior formation one through hole 28 of each second conductor section 202, its further groove 26 exposes the lower conductiving layer 16 that is positioned at the first conductor section 201, and through hole 28 exposes the upper conductive layer 14 that is positioned at the second conductor section 202.In the present embodiment, groove 26 is the space that arranges of light-emitting diode, can make the upper surface of the unlikely too outstanding insulating substrate 12 of light-emitting diode by this concave design, and can reduce the thickness of the encapsulating structure of light-emitting diode, and through hole 28 is the central areas that are positioned at the edge of the second conductor section 202, as shown in Figure 3.In this enforcement, groove 26 and the through hole 28 of insulating substrate 12 are to form in the laser drill mode, but not as limit.What deserves to be explained is, in the present embodiment, the groove 26 that is positioned at each first conductor section 201 of same row forms irrigation canals and ditches for communicating with each other, and the two-phase side of each groove 26 can increase rising angle without sidewall by this, but not as limit.For example, the groove 26 of each first conductor section 201 also can be respectively a disconnected enclosed type groove each other.In addition, the sidewall of groove 26 also is not limited to vertical sidewall, and visual rising angle is different from the design of light type or technique is different and have sloped sidewall.
as Fig. 5 and shown in Figure 6, form respectively conductive pattern 30 in each groove 26 of insulating substrate 12 is interior subsequently, wherein on each, conductive pattern 30 covers the sidewall of each groove 26 and forms with conformal fashion with groove 26, make in each the first conductor section 201, on each conductive pattern 30 respectively with each on the lower conductiving layer 16 that exposes of conductive layer 14 and each groove 26 be electrically connected, go up by this conductive pattern 30, upper conductive layer 14 forms the first wire 22 with lower conductiving layer 16, thereby make upper conductive layer 14 and the sandwiched part insulating substrate 12 of lower conductiving layer 16 in a side of the first wire 22.In other words, insulating substrate 12 is extending laterally from the first wire 22.In addition, and in the lump in the interior conductive pattern 32 that forms respectively of each through hole 28, wherein each time conductive pattern 32 and the lower conductiving layer 16 that is arranged in each second conductor section 202 and upper conductive layer 14 that each through hole 28 exposes are electrically connected.Because groove 26 runs through insulating substrate 12, therefore in each first conductor section 201, can make the upper conductive layer 14 of the upper surface that is positioned at insulating substrate 12 be electrically connected to the lower conductiving layer 16 of the lower surface that is positioned at insulating substrate 12 by upper conductive pattern 30, be beneficial to the follow-up outer electrical connection of opposing.In addition, the upper conductive pattern 30 that is covered in the sidewall of groove 26 separately has reflex, can increase luminous utilance.Through hole 28 is also to run through insulating substrate 12, therefore in each second conductor section 202, can make the upper conductive layer 14 of the upper surface that is positioned at insulating substrate 12 be electrically connected to the lower conductiving layer 16 of the lower surface that is positioned at insulating substrate 12 by lower conductive pattern 32, be beneficial to the follow-up outer electrical connection of opposing.In the present embodiment, upper conductive pattern 30 can be various electric conducting material with the material of lower conductive pattern 32, and it can be single conductive layer or composite conducting layer.For example in the present embodiment, upper conductive pattern 30 can be with the material of lower conductive pattern 32 the composite conducting layer that is made of nickel and money layer metal, and can utilize plating mode to form, but not as limit.in addition, after forming upper conductive pattern 30 and lower conductive pattern 32, optionally in the surface of the upper conductive layer 14 that is positioned at each second conductor section 202 and the top that is positioned at through hole 28 form an identification mark 34, distinguish by this first wire 22 and the second wire 24, and form anti-welding insulating barrier 36, it is covered in the lower surface of the insulating substrate 12 of the part surface of lower conductiving layer 16 of each first conductor section 201 and isolated area 203, that is the lower surface of partial coverage the first wire 22, the risk that is short-circuited in reflow operation after completing with the reduction LED package when being assemblied in electronic installation.What deserves to be explained is, under can be first with correspondence before forming lower anti-welding insulating barrier 36, the thickness of the lower conductiving layer 16 of anti-welding insulating barrier 36 be done the appropriateness reduction, instantly can form substantially a flat surfaces with adjacent lower conductiving layer 16 after anti-welding insulating barrier 36 forms by this, and be conducive to (not shown) on the follow-up substrate that LED package is welded in another electronic installation.
As Fig. 7 and shown in Figure 8, a plurality of light-emitting diodes 38 are provided, wherein each light-emitting diode 38 comprises one first electrode 381 and one second electrode 382.Subsequently, each light-emitting diode 38 is fixed on the first interior wire 22 of each groove 26, and make the first electrode 381 of each light-emitting diode 38 and each corresponding first wire, 22 electric connections, and the second electrode 382 of each light-emitting diode 38 and each corresponding second wire 24 are electrically connected.In the present embodiment, the first electrode 381 of light-emitting diode 38 and the second electrode 382 lay respectively at not two apparent surfaces of the same side of light-emitting diode 38, the first electrode 381 is arranged at the surface of the first wire 22 and directly is electrically connected with the first wire 22, the second electrode 382 utilizes a bonding wire 40 to be electrically connected to the second wire 24, but not as limit.Then, be included on whole substrate 10 and form an adhesive layer 42 on light-emitting diode 38, light-emitting diode 38 is coated and encapsulates, and cut along 18 pairs of substrates 10 of Cutting Road, to form a plurality of LED package 44, as shown in Figure 9.
The manufacture method of LED package of the present invention is not limited with the method that above-described embodiment is instructed, and implements the sample attitude and can have other.Please refer to Figure 10.Figure 10 has illustrated the schematic diagram of manufacture method of the LED package of the present invention's one second preferred embodiment.For the ease of relatively different place and the simplified illustration of each embodiment, the present embodiment and previous embodiment are used same-sign mark similar elements, and only describe for the step different from previous embodiment, please refer to Fig. 1 to Fig. 9 as for identical method step.The difference of the present embodiment and previous embodiment is pattern and the electric connection mode of light-emitting diode.As shown in figure 10, in the present embodiment, the first electrode 381 of light-emitting diode 38 and the second electrode 382 are to be positioned on the surface of the same side of light-emitting diode 38, and the first electrode 381 of light-emitting diode 38 is electrically connected by a bonding wire 40 and the first wire 22, and the second electrode 382 of light-emitting diode 38 is electrically connected by another bonding wire 40 and the second wire 24.
Please refer to Figure 11 to Figure 17.Figure 11 to Figure 17 has illustrated the schematic diagram of manufacture method of the LED package of the 3rd preferred embodiment of the present invention.Feature for the manufacture method that shows LED package of the present invention, Figure 11 and look schematic form more than Figure 13 and illustrate, 12A-12B figure, Figure 14 to Figure 16 illustrate with the hatching line schematic form, Figure 17 illustrates with the outward appearance schematic form, and wherein 12B figure is the generalized section that illustrates of the A-A ' hatching along Figure 11, the generalized section that Figure 14 illustrates for the B-B ' hatching along Figure 13.As shown in Figure 11 and Figure 12 A-12B, at first provide a substrate 50.In the present embodiment and hereinafter described other embodiment, substrate is a for example printed circuit board (PCB), but not as limit, and can be the substrate of other type.Substrate 50 comprises that conductive layer 54 on an insulating substrate 52, is arranged at the upper surface of insulating substrate 52, and one lower conductiving layer 56 be arranged at the lower surface of insulating substrate 52, wherein insulating substrate 52 can be such as glass fibre or resin etc. of various insulating material, and upper conductive layer 54 is for example copper of various electric conducting material with the visual electrical demand of lower conductiving layer 56, but not as limit.In addition, be formed with many Cutting Roads 58 and a plurality of element regions 60 on substrate 50.Then, conductive layer 54 and lower conductiving layer 56 on patterning are with one first conductor section 601 and one second conductor section 602 that electrically separates respectively at the interior formation of each element region 60.Upper conductive layer 54 can be respectively at the interior formation one opening 54A of each first conductor section 601 after the patterning operation, and part exposes insulating substrate 52.In the present embodiment, on patterning, the step of conductive layer 54 and lower conductiving layer 56 is to utilize etching mode to reach, but not as limit.Then, the insulating substrate 52 that in removal, the opening 54A of conductive layer 54 exposes is with respectively at the interior formation one groove 52A of insulating substrate 52 in each first conductor section 601.In the present embodiment, the groove 52A of insulating substrate 52 utilizes the laser drill mode to form, and groove 52A can run through insulating substrate 52 and expose the lower conductiving layer 56 of part, but not as limit.For example, the groove 52A of insulating substrate 52 also can utilize alternate manner to be formed, and groove 52A also can not run through insulating substrate 52.In addition, see it by upper apparent direction, groove 52A can be an enclosed type groove, but not as limit.The shape of groove 52A can be rectangle, but not can be other various shapes as limit; Moreover the sidewall of groove 52A also can be vertical sidewall, slopes inwardly or outward-dipping sidewall, or has the sidewall of radian.
As Figure 13 and shown in Figure 14, then remove lower conductiving layer 56, the insulating substrate 52 and upper conductive layer 54 in four corners district of each element region 60, to run through the through hole 66 of substrate 50 respectively at four corners formation one of each element region 60.In the present embodiment, through hole 66 is to utilize the machine drilling mode to form, but through hole 66 is not limited to form in the machine drilling mode.Then, form respectively anti-welding insulating barrier 62 on the upper conductive layer 54 in four corners district of each element region 60, and make the anti-welding insulating barrier 62 corresponding through holes 66 of covering on each, and form anti-welding insulating barrier 64 on the lower conductiving layer 56 in the first conductor section 601 of each element region 60.In the present embodiment, upper anti-welding insulating barrier 62 is a pie chart case, but not as limit, for example goes up the pattern that anti-welding insulating barrier 62 also can be other shape, for example rectangular patterns, argyle design or other geometrical pattern.In addition, upper anti-welding insulating barrier 62 also can be avoided the cut surface of upper conductive layer after cutting action to produce the burr phenomenon, and can increase the reliability of LED package except the effect with the short circuit avoided.
as shown in figure 15, form subsequently a conductive pattern 68 on a sidewall of each through hole 66, be electrically connected respectively corresponding to each through hole 66 other upper conductive layer 54 and lower conductiving layer 56, to form one first wire 70 in each first conductor section 601, and form one second wire 72 in each second conductor section 602, wherein the first wire 70 is by the upper conductive layer 54 in the first conductor section 601, 68 common formation of lower conductiving layer 56 and conductive pattern, the second wire 72 is by the upper conductive layer 54 in the second conductor section 602, 68 common formation of lower conductiving layer 56 and conductive pattern, and the first wire 70 electrically separates with the second wire 72.In addition, in the present embodiment, the upper conductive layer 54 of the first wire 70, lower conductiving layer 56 and conductive pattern 68 are to be electrically connected in three positions at groove 52A and two through hole 66 places, and the upper conductive layer 54 of the second wire 72, lower conductiving layer 56 and conductive pattern 68 are to be electrically connected in two positions at two other through hole 66 places.In addition, the material of conductive pattern 68 can be various electric conducting material, and it can be single conductive layer or composite conducting layer.For example in the present embodiment, the material of conductive pattern 68 can be the composite conducting layer that is made of nickel and money layer metal.In addition, conductive pattern 68 for example can utilize, and plating mode forms, and conductive pattern 68 is except the sidewall that is formed at through hole 66, also can be formed in the lump the sidewall of each groove 52A, the lower conductiving layer 56 that each groove 52A exposes, and the surface of any upper conductive layer that exposes 54 and lower conductiving layer 56.In addition, conductive pattern 68 is preferably with conformal fashion and forms, that is conductive pattern 68 has uniform thickness substantially, can make by this bottom of groove 52A still can keep smooth, and be conducive to the setting of follow-up light-emitting diode, and can be because of the uneven light direction that affect light-emitting diode in the bottom of groove 52A.For example, do not add in the material of conductive pattern 68 under the situation of polishing material for example, can make conductive pattern 68 have better conformability.
As shown in figure 16, one light-emitting diode 74 is set in each groove 52A subsequently at least, and make one first electrode 741 of each light-emitting diode 74 and the first corresponding wire 70 electric connections, and one second electrode 742 of each light-emitting diode 74 and the second corresponding wire 72 are electrically connected.In the present embodiment, the first electrode 741 of light-emitting diode 74 and the second electrode 742 are positioned at the same side of light-emitting diode 74, and the first electrode 741 and the second electrode 742 are electrically connected by bonding wire 761, the 762 and first wire 70 and the second wire 72 respectively, but the electric connection mode of light-emitting diode 74 and the first wire 70 and the second wire 72 is not as limit.Then, form adhesive layer 78 encapsulation LEDs 74 on substrate 50.
Then carry out a cutting operation, along Cutting Road 58 (as shown in figure 11) cutting substrate 50 between adjacent element region 60, to form LED package 80, as shown in figure 17.
Refer again to Figure 18.Figure 18 has illustrated the schematic diagram of the LED package of the 4th preferred embodiment of the present invention, wherein be simplified illustration and be convenient to the relatively different place of each embodiment, the present embodiment uses the identical element of identical symbol mark with aforementioned the 3rd embodiment, and only be illustrated for not existing together, and no longer the operation method is repeated to give unnecessary details.The electric connection mode of the light-emitting diode of the present embodiment and the first wire and the second wire and aforementioned the 3rd embodiment are different.As shown in figure 18, the first electrode 741 of the LED package 90 of the present embodiment and the second electrode 742 are positioned at not the same side of light-emitting diode 74, wherein the first electrode 741 is first wire 70 electric connections in direct and groove 52A, and the second electrode 742 is electrically connected by bonding wire 762 and the second wire 72.
Please refer to Figure 19 to Figure 26.Figure 19 to Figure 26 has illustrated the schematic diagram of manufacture method of the LED package of the 5th preferred embodiment of the present invention.Feature for the manufacture method that shows LED package of the present invention, Figure 19, Figure 21 and look schematic form more than Figure 24 and illustrate, Figure 20 A-20B, Figure 22, Figure 23 and Figure 25 illustrate with the section schematic form, Figure 26 illustrates with the outward appearance schematic form, and wherein 20B figure is the generalized section that illustrates of the C-C ' hatching along Figure 19, the generalized section that Figure 22 illustrates for the D-D ' hatching along Figure 21, the generalized section that Figure 25 illustrates for the E-E ' hatching along Figure 24.As shown in Figure 19 and Figure 20 A-20B, at first provide a substrate 100.Substrate 100 comprises that conductive layer 104 on an insulating substrate 102, is arranged at the upper surface of insulating substrate 102, and a lower conductiving layer 106 is arranged at the lower surface of insulating substrate 102.In addition, be formed with many Cutting Roads 108 and a plurality of element regions 110 on substrate 100.Then, conductive layer 104 and lower conductiving layer 106 on patterning are with one first conductor section 1101 that electrically separates respectively at the interior formation of each element region 110, one second conductor section 1102 and a privates district 1103.Upper conductive layer 104 can be respectively at the interior formation one opening 104A of each first conductor section 1101 after the patterning operation, and part exposes insulating substrate 102.In the present embodiment, on patterning, the step of conductive layer 104 and lower conductiving layer 106 is to utilize etching mode to reach, but not as limit.Then, the insulating substrate 102 that in removal, the opening 104A of conductive layer 104 exposes is with respectively at the interior formation one groove 102A of insulating substrate 102 in each first conductor section 1101.In the present embodiment, the groove 102A of insulating substrate 102 utilizes the laser drill mode to form, and groove 102A can run through insulating substrate 102 and expose the lower conductiving layer 106 of part, but not as limit.For example, the groove 102A of insulating substrate 102 also can utilize alternate manner to be formed, and groove 102A also can not run through insulating substrate 102.In addition, see it by upper apparent direction, groove 102A is shaped as rectangle, but not can be other various shapes as limit; Moreover the sidewall of groove 102A also can be vertical sidewall, slopes inwardly or outward-dipping sidewall, or has the sidewall of radian.
As Figure 21 and shown in Figure 22, then remove the lower conductiving layer 106 and insulating substrate 102 in four corners district of each element region 110, form a through hole 116 with four corners respectively at each element region 110, wherein each through hole 116 partly exposes respectively conductive layer 104.In the present embodiment, through hole 116 is to utilize the laser drill mode to form, but not as limit.Then, form respectively anti-welding insulating barrier 112 on the upper conductive layer 104 of the periphery of each element region 110, and form anti-welding insulating barrier 114 on the lower conductiving layer 106 in the first conductor section 1101 of each element region 110.In the present embodiment, on each, anti-welding insulating barrier 112 is respectively around each element region 110, but the position of upper anti-welding insulating barrier 112 and shape be not as limit.
as shown in figure 23, form subsequently a conductive pattern 118 on a sidewall of each through hole 116, be electrically connected respectively the upper conductive layer 104 and the other lower conductiving layer 106 of each through hole 116 that expose corresponding to each through hole 116, to form one first wire 120 in each first conductor section 1101, form one second wire 122 and form a privates 124 (Figure 23 does not show) in each privates district 1103 (Figure 23 does not show) in each second conductor section 1102, wherein the first wire 120 is by the upper conductive layer 104 in the first conductor section 1101, 118 common formation of lower conductiving layer 106 and conductive pattern, the second 122, wire is by the upper conductive layer 104 in the second conductor section 1102, 118 common formation of lower conductiving layer 106 and conductive pattern, 124 of privates are by the upper conductive layer 104 in privates district 1103, 118 common formation of lower conductiving layer 106 and conductive pattern, and the first wire 120, the second wire 122 electrically separates with privates 124 threes.The material of conductive pattern 118 can be various electric conducting material, and it can be single conductive layer or composite conducting layer.For example in the present embodiment, the material of conductive pattern 118 can be the composite conducting layer that is made of nickel and money layer metal.In addition, conductive pattern 118 for example can utilize, and plating mode forms, therefore conductive pattern 118 is except the sidewall that is formed at through hole 116, also can be formed in the lump the sidewall of each groove 102A, the lower conductiving layer 106 that each groove 102A exposes, and the surface of any upper conductive layer that exposes 104 and lower conductiving layer 106.In addition, conductive pattern 118 is preferably with groove 102A and forms with conformal fashion, that is conductive pattern 118 has uniform thickness substantially, can make by this bottom of groove 102A still can keep smooth, and be conducive to the setting of follow-up light-emitting diode, and can be because of the uneven light direction that affect light-emitting diode in the bottom of groove 102A.For example, still do not add in the material of conductive pattern 118 under the situation of polishing material for example, can make conductive pattern 118 have better conformability.
As Figure 24 and shown in Figure 25, one first light-emitting diode 130 and one second light-emitting diode 132 are set in each groove 102A subsequently, and one first electrode 1301 of each first light-emitting diode 130 and the first wire 120 are electrically connected, one second electrode 1302 and second wire 122 of each first light-emitting diode 130 are electrically connected, one first electrode 1321 and first wire 120 of each second light-emitting diode 132 are electrically connected, and one second electrode 1322 of each second light-emitting diode 132 and privates 124 are electrically connected.In the present embodiment, the first electrode 1301 and the second electrode 1302 are positioned at the same side of the first light-emitting diode 130, and the first electrode 1301 and the second electrode 1302 are respectively by bonding wire 1341, the 1342 and first wire 120 and the second wire 122 electric connections; The first electrode 1321 and the second electrode 1322 are positioned at the same side of the second light-emitting diode 132, and the first electrode 1321 and the second electrode 1322 are respectively by bonding wire 1361, the 1362 and first wire 120 and privates 124 electric connections.Then, form adhesive layer 138 (Figure 24 does not show) encapsulation the first light-emitting diode 130 and second light-emitting diode 132 on substrate 100.
Then carry out a cutting operation, along Cutting Road 108 (as shown in figure 19) cutting substrate 100 between adjacent element region 110, to form LED package 140, as shown in figure 26.
Refer again to Figure 27.Figure 27 has illustrated the schematic diagram of the LED package of the 6th preferred embodiment of the present invention, wherein be simplified illustration and be convenient to the relatively different place of each embodiment, the present embodiment uses the identical element of identical symbol mark with aforementioned the 5th embodiment, and only be illustrated for not existing together, and no longer manufacture method is repeated to give unnecessary details.The electric connection mode of the electric connection mode of first light-emitting diode of the present embodiment and the first wire and the second wire and the second light-emitting diode and the first wire and privates and aforementioned the 3rd embodiment are different.As shown in figure 27, in the present embodiment, the first electrode 1301 of the first light-emitting diode 130 of LED package 150 and the second electrode 1302 are positioned at not the same side of the first light-emitting diode 130, the first wire 120 electric connections that wherein the first electrode 1301 is direct and groove 102A is interior, the second electrode 1302 are to be electrically connected by bonding wire 1342 and the second wire 122; In addition, the first electrode 1321 of the second light-emitting diode 132 and the second electrode 1322 are the not the same sides that are positioned at the second light-emitting diode 132, the first wire 120 electric connections that wherein the first electrode 1321 is direct and groove 102A is interior, the second electrode 1322 are by bonding wire 1362 and privates 124 electric connections.
In sum, LED package of the present invention is arranged at light-emitting diode in the groove of substrate, can effectively reduce the integral thickness of LED package.Therefore in addition, conductive pattern is to be formed at bottom and the sidewall of groove with conformal fashion, can keep flatness and guarantees to arrange the light emission direction of LED package thereon.Moreover, can change rising angle and light type by shape or the Sidewall angles of adjusting groove, and then increase the range of application of light-emitting diode.In addition, the through hole of substrate is except providing being connected approach of upper conductive layer and lower conductiving layer, also can be at follow-up cushion space as scolding tin when carrying out the reflow operation of surface mount (surface mount), and effectively promote the yield of surface mounting technology.
The above is only preferred embodiment of the present invention, and all equalizations of doing according to the present patent application the scope of the claims change and modify, and all should belong to covering scope of the present invention.
Claims (11)
1. LED package comprises:
One first wire, this first wire comprise conductive pattern and a lower conductiving layer on one;
One insulating barrier one of this first wire extends laterally certainly;
One second wire is arranged on this insulating barrier and extends on a upper surface and a lower surface of this insulating barrier, and wherein this second wire electrically separates with this first wire;
One light-emitting diode is arranged on this first wire, and one first electrode of this light-emitting diode and this first wire are electrically connected, and one second electrode of this light-emitting diode and the electric connection of this second wire; And
One adhesive layer encapsulates this light-emitting diode;
Wherein, on this, conductive pattern forms a groove and is electrically connected with this lower conductiving layer, do not comprise this insulating barrier under this groove, and this light-emitting diode is arranged in this groove.
2. LED package according to claim 1, is characterized in that, side this insulating barrier of sandwiched part of this first wire.
3. LED package according to claim 1, is characterized in that, also comprises at least one identification mark, is arranged to be positioned on this second wire.
4. LED package according to claim 1, is characterized in that, also comprises an anti-welding insulating barrier, is arranged at this lower surface of this insulating barrier and a lower surface of this first wire of cover part.
5. LED package according to claim 1, it is characterized in that, this first electrode and this second electrode are positioned at the same side of this light-emitting diode, and this first electrode and this second electrode are respectively by bonding wire and this first wire and the electric connection of this second wire.
6. LED package according to claim 1, it is characterized in that, this first electrode and this second electrode are positioned at not the same side of this light-emitting diode, this first wire that this first electrode is direct and this groove is interior is electrically connected, and this second electrode is electrically connected by a bonding wire and this second wire.
7. LED package comprises:
One insulating substrate, it has a groove, and a plurality of through hole lays respectively at the corner district of this insulating substrate;
One first wire, the sidewall of a upper surface of this insulating substrate of partial coverage and a lower surface and these through holes of cover part;
One second wire, the sidewall of this upper surface of this insulating substrate of partial coverage and this lower surface and these through holes of cover part, and this first wire electrically separates with this second wire;
A plurality of anti-welding insulating barriers, a upper surface and this through hole of corresponding part of this first wire of partial coverage, and a upper surface and this through hole of corresponding part of covering this second wire respectively;
One light-emitting diode is arranged in this groove, and one first electrode of this light-emitting diode and this first wire are electrically connected, and one second electrode of this light-emitting diode and the electric connection of this second wire; And
One adhesive layer encapsulates this light-emitting diode;
Wherein, do not comprise this insulating substrate below this groove.
8. LED package according to claim 7, is characterized in that, this first wire separately covers the sidewall of this groove.
9. LED package according to claim 7, is characterized in that, separately comprises anti-welding insulating barrier, a lower surface of this first wire of partial coverage.
10. LED package according to claim 7, it is characterized in that, this first electrode and this second electrode are positioned at the same side of this light-emitting diode, and this first electrode and this second electrode are respectively by bonding wire and this first wire and the electric connection of this second wire.
11. LED package according to claim 7, it is characterized in that, this first electrode and this second electrode are positioned at not the same side of this light-emitting diode, this first wire that this first electrode is direct and this groove is interior is electrically connected, and this second electrode is electrically connected by a bonding wire and this second wire.
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| CN201310051620.3A CN103107273B (en) | 2010-01-22 | 2010-04-16 | LED package |
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| CN201310051620.3A CN103107273B (en) | 2010-01-22 | 2010-04-16 | LED package |
| CN 201010165571 CN102136431B (en) | 2010-01-22 | 2010-04-16 | Light emitting diode package and manufacturing method thereof |
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|---|---|---|---|---|
| CN103727464A (en) * | 2014-01-08 | 2014-04-16 | 昆山龙腾光电有限公司 | Backlight module and manufacturing method thereof |
| CN103727464B (en) * | 2014-01-08 | 2016-02-24 | 昆山龙腾光电有限公司 | Backlight module and manufacture method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103107273B (en) | 2016-03-02 |
| CN102136431A (en) | 2011-07-27 |
| CN102136431B (en) | 2013-07-24 |
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Effective date of registration: 20180118 Address after: Wujiang economic and Technological Development Zone, Suzhou City, Jiangsu, Jiangsu Province, Zhongshan North Road No. 2135 Patentee after: Everlight Electronics (China) Co.,Ltd. Address before: China Taiwan New Taipei city forest region of the road 6 No. 8 Patentee before: Everlight Electronics Co.,Ltd. |