CN103107247A - Light-emitting diode (LED) chip manufacturing method and LED chip structure - Google Patents
Light-emitting diode (LED) chip manufacturing method and LED chip structure Download PDFInfo
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- CN103107247A CN103107247A CN2011103597862A CN201110359786A CN103107247A CN 103107247 A CN103107247 A CN 103107247A CN 2011103597862 A CN2011103597862 A CN 2011103597862A CN 201110359786 A CN201110359786 A CN 201110359786A CN 103107247 A CN103107247 A CN 103107247A
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Abstract
The invention relates to a light-emitting diode (LED) chip manufacturing method and an LED chip structure. The LED chip manufacturing method includes the steps of providing a conductive block, providing an epitaxy block, carrying out combination, removing epitaxy layer base materials, manufacturing independent LEDs, forming a second insulating layer and carrying out electric connection. A first LED, a second LED and a third LED are arranged on the conductive block. The first LED is connected with the second LED in parallel. The second LED is connected with the third LED in series. By aid of the LED chip manufacturing method, an elementary unit structure which is capable of being elastically designed and provided with the LEDs in a series-parallel mode can be formed. Consequently, diversity and application of a generative design of the LED chip can be substantially promoted.
Description
Technical field
The present invention relates to a kind of manufacture method and structure thereof of LED chip, particularly relate to a kind of manufacture method and structure thereof of the LED chip that is applied to throw light on.
Background technology
Fig. 1 is a kind of cutaway view of light-emitting diode of existing known horizontal framework.The parallel-connection light-emitting diodes 101 of existing known horizontal framework, it is to form a n type semiconductor layer 111 on the insulating substrate 10 of a GaAs (GaAs); Then form again a p type semiconductor layer 112 on n type semiconductor layer 111; Then form many light-emitting diodes 11 with etching mode; Make 11 of different light-emitting diodes form parallel-connection structure by the first insulating material 12 and conductive layer 13 at last.Light-emitting diode 11 so that TD technique is made can only form different light-emitting diode 11 parallel-connection structure each other and can't form cascaded structure.
Fig. 2 is that a kind of existing known wafer is in conjunction with the cutaway view of the horizontal framework of light-emitting diode under (Wafer Bonding, WB) technique.The existing known parallel-connection light-emitting diodes 102 made from the WB technology, it is to form one second insulating material 15 on a metal or silicon substrate 14; Then form p type semiconductor layer 112 on the second insulating material 15; Then form again a n type semiconductor layer 111 on p type semiconductor layer 112; Then form many light-emitting diodes 11 with etching mode; Make 11 of different light-emitting diodes form parallel-connection structure by the first insulating material 12 and conductive layer 13 at last.Vertical type light emitting diode 11 so that WB technique is made can only form different light-emitting diode 11 parallel-connection structure each other and can't form cascaded structure.
Fig. 3 is the cutaway view of the tandem type light emitting diode under a kind of existing known WB technique.Horizontal framework light-emitting diode under existing known WB technique can form a series connection light-emitting diode 103, and it is to form one second insulating material 15 on a metal or silicon substrate 14; Then form a p type semiconductor layer 112 on the second insulating material 15; Then form again a n type semiconductor layer 111 on p type semiconductor layer 112; Then form many light-emitting diodes 11 with etching mode; Make 11 of different light-emitting diodes form cascaded structure by the first insulating material 12 and conductive layer 13 at last.
The light-emitting diode of existing known horizontal framework can only form light-emitting diode 101 structures in parallel, what the horizontal framework light-emitting diode under existing known WB technique was same also can only form light-emitting diode 102 structures in parallel or can only form series connection light-emitting diode 103 structures, can't form simultaneously a series parallel structure in single technique, therefore therefore existing known techniques is very restricted in the use.
This shows, the manufacture method of above-mentioned existing LED chip and structure thereof obviously still have inconvenience and defective, and demand urgently further being improved in method, product structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but have no for a long time applicable design is completed by development always, and conventional method and product do not have appropriate method and structure to address the above problem, and this is obviously the problem that the anxious wish of relevant dealer solves.Therefore how to found a kind of manufacture method and structure thereof of new LED chip, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Summary of the invention
The object of the invention is to, overcome the manufacture method of existing LED chip and the defective that structure exists thereof, and provide a kind of manufacture method and structure thereof of new LED chip, technical problem to be solved is to reach the light emitting diode construction that forms at least one group of mutual series and parallel on same base material with wafer scale technique, and make whereby the diversity of the follow-up derivative design of light-emitting diode chip for backlight unit and use significantly lifting, be very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.The manufacture method of a kind of LED chip that proposes according to the present invention, it comprises the following steps: to provide a conduction bulk, and this conduction bulk comprises: a conductive base, it has a first area and a second area; One first insulating barrier is formed on this first area; And a first metal layer is formed on this second area and this first insulating barrier; One crystal block material of heap of stone is provided, and this crystal block material of heap of stone comprises: an epitaxial layer base material; One epitaxial layer is formed on this epitaxial layer base material; And one second metal level is formed at this epitaxial layer with respect to the semiconductor side of an other side of this epitaxial layer base material; Carry out combination, be by should conduct electricity in conjunction with this first metal layer and this second metal level bulk with should be combined into one to become one in conjunction with bulk by crystal block material of heap of stone; Removing this epitaxial layer base material, is that this epitaxial layer base material is removed to form a light-emitting diode bulk from this in conjunction with bulk; Making individual light-emitting diodes, is that this light-emitting diode bulk is carried out etching, makes to form at least one the first light-emitting diode on this first area, makes and forms at least one the second light-emitting diode and at least one the 3rd light-emitting diode on this second area; Form one second insulating barrier, it is to form this second insulating barrier between this first light-emitting diode, this second light-emitting diode and the 3rd light-emitting diode; And be electrically connected, it is on this second insulating barrier, by forming one first conductive layer, each this first light-emitting diode and each this second light-emitting diode are connected each other, make each this second light-emitting diode and each the 3rd light-emitting diode in parallel each other by forming one second conductive layer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid LED chip, wherein said conductive base are the semiconductor wafer substrate.
The manufacture method of aforesaid LED chip, wherein said semiconductor crystal wafer base material are the semiconductor conductive base of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs.
The manufacture method of aforesaid LED chip, wherein said conductive base are the conductive base of copper tungsten, molybdenum, copper, tungsten or manganese material.
The manufacture method of aforesaid LED chip, wherein said conductive base comprises: a non-conductive substrate; And a plurality of the first conductive poles penetrate this non-conductive substrate and make those first conductive poles and the electric connection of this first metal layer.
The manufacture method of aforesaid LED chip, wherein said semiconductor side and this second metal interlevel are formed with a reflector, are formed with a plurality of the second conductive poles in this reflector to be electrically connected this semiconductor side and this second metal level.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of LED chip structure that the present invention proposes, it comprises: a conduction bulk, and this conduction bulk comprises: a conductive base, it has a first area and a second area; One first insulating barrier is formed on this first area; And a plurality of the first metal layers are incorporated on this second area and this first insulating barrier independently of one another; At least one the first light-emitting diode is fixedly arranged on this first insulating barrier after this first metal layer is combined by one of a plurality of second metal levels; At least one the second light-emitting diode is fixedly arranged on this second area after this first metal layer is combined and this second light-emitting diode and this first light-emitting diode are connected mutually by one of a plurality of second insulating barriers and one first conductive layer by this second metal level; And at least one the 3rd light-emitting diode, after being combined, this first metal layer is fixedly arranged on this second area and parallel with one another by one of those second insulating barriers and one second conductive layer and this second light-emitting diode by this second metal level.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid LED chip structure, wherein said conductive base are the semiconductor wafer substrate.
Aforesaid LED chip structure, wherein said semiconductor crystal wafer base material are the semiconductor conductive base of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs.
Aforesaid LED chip structure, wherein said conductive base are the conductive base of copper tungsten, molybdenum, copper, tungsten or manganese material.
Aforesaid LED chip structure, wherein said conductive base comprises: a non-conductive substrate; And a plurality of the first conductive poles penetrate this non-conductive substrate and are electrically connected with this first metal layer on this second area.
Aforesaid LED chip structure, wherein each this first light-emitting diode, each this second light-emitting diode and each the 3rd light-emitting diode respectively this second metal interlevel corresponding with it be provided with a reflector, and be provided with in this reflector on this second area a plurality of the second conductive poles make this second light-emitting diode and the 3rd light-emitting diode respectively this second metal level corresponding with it be electrically connected.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme, the manufacture method of LED chip of the present invention and structure thereof have following advantages and beneficial effect at least: the present invention can be with the technique of simplifying most, the LED series parallel structure is completed simultaneously on a conduction bulk, thereby can significantly be promoted diversity and the application of the derivative design of light-emitting diode chip for backlight unit.
In sum, the invention relates to a kind of manufacture method and structure thereof of LED chip.Wherein the method comprises the following steps: to provide a conduction bulk; One crystal block material of heap of stone is provided; Carry out combination; Remove the epitaxial layer base material; Make individual light-emitting diodes; Form one second insulating barrier; And be electrically connected.Be formed with first, second and third light-emitting diode on the conduction bulk, wherein first and second light-emitting diode is parallel with one another, and second connects mutually with the 3rd light-emitting diode.But therefore can form the series-parallel basic cell structure of the light-emitting diode with Flexible Design by the present invention, thereby can significantly promote diversity and the application of the derivative design of light-emitting diode chip for backlight unit.The present invention has significant progress technically, has obvious good effect, is really a new and innovative, progressive, practical new design.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other purpose of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1 is a kind of cutaway view of light-emitting diode of existing known horizontal framework.
Fig. 2 is the cutaway view of the horizontal framework of light-emitting diode under a kind of existing known WB technique.
Fig. 3 is the cutaway view of the tandem type light emitting diode under a kind of existing known WB technique.
Fig. 4 is the flow chart of manufacture method of a kind of LED chip of the embodiment of the present invention.
Fig. 5 A is that the embodiment of the present invention a kind of conducted electricity the cutaway view of bulk the first structure.
Fig. 5 B is that the embodiment of the present invention a kind of conducted electricity the cutaway view of bulk the second structure.
Fig. 6 is the cutaway view of the crystal block material a kind of of heap of stone of the embodiment of the present invention.
Fig. 7 is a kind of cutaway view in conjunction with bulk of the embodiment of the present invention.
Fig. 8 is the cutaway view that the embodiment of the present invention a kind of removes the crystal block material of heap of stone after the epitaxial layer base material.
Fig. 9 is the schematic diagram of the individual light-emitting diodes after a kind of etching of the embodiment of the present invention.
Figure 10 is a kind of schematic diagram that forms the second insulating barrier at individual light-emitting diodes of the embodiment of the present invention.
Figure 11 A is a kind of schematic diagram that carries out the first structure of connection in series-parallel electric connection on the second insulating barrier with conductive layer of the embodiment of the present invention.
Figure 11 B is a kind of schematic diagram that carries out the second structure of connection in series-parallel electric connection on the second insulating barrier with conductive layer of the embodiment of the present invention.
Figure 12 is the cutaway view that the crystal block material a kind of of heap of stone of the embodiment of the present invention further is provided with a reflector.
Figure 13 is the cutaway view of LED chip structure that is provided with the non-conductive substrate of the first conductive pole in a kind of use of the embodiment of the present invention.
101: parallel-connection light-emitting diodes 102: parallel-connection light-emitting diodes
103: series connection light-emitting diode 10: insulating substrate
11: light-emitting diode 111:N type semiconductor layer
12: the first insulating material of 112:P type semiconductor layer
13: conductive layer 14: metal or silicon substrate
15: the second insulating material 200:LED chip structures
20: conduction bulk 21: conductive base
22: first area 23: second area
Insulating barrier 25 in 24: the first: the first metal layer
26: 27: the first conductive poles of non-conductive substrate
30,30 ': crystal block material 31 of heap of stone: epitaxial layer base material
32: 33: the second metal levels of epitaxial layer
34: semiconductor side 35: reflector
50: 60: the first light-emitting diodes of light-emitting diode bulk
80: the three light-emitting diodes of 70: the second light-emitting diodes
91: the first conductive layers of 90: the second insulating barriers
92: the second conductive layers
Embodiment
Reach for further setting forth the present invention technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, manufacture method and its embodiment of structure, method, step, structure, feature and the effect thereof of the LED chip that foundation the present invention is proposed are described in detail as follows.
Relevant aforementioned and other technology contents of the present invention, Characteristic can be known to present in the following detailed description that coordinates with reference to graphic preferred embodiment.Explanation by embodiment, should be to reach technological means and the effect that predetermined purpose takes to obtain one more deeply and concrete understanding to the present invention, yet appended graphic only be to provide with reference to the use of explanation, the present invention is limited.
Fig. 4 is the flow chart of manufacture method of a kind of LED chip of the embodiment of the present invention.Fig. 5 A is that the embodiment of the present invention a kind of conducted electricity the cutaway view of bulk the first structure.Fig. 5 B is that the embodiment of the present invention a kind of conducted electricity the cutaway view of bulk the second structure.Fig. 6 is the cutaway view of the crystal block material a kind of of heap of stone of the embodiment of the present invention.Fig. 7 is a kind of cutaway view in conjunction with bulk of the embodiment of the present invention.Fig. 8 is the cutaway view that the embodiment of the present invention a kind of removes the crystal block material of heap of stone after the epitaxial layer base material.Fig. 9 is the schematic diagram of the individual light-emitting diodes after a kind of etching of the embodiment of the present invention.Figure 10 is a kind of schematic diagram that forms the second insulating barrier at individual light-emitting diodes of the embodiment of the present invention.Figure 11 A is a kind of schematic diagram that carries out the first structure of connection in series-parallel electric connection on the second insulating barrier with conductive layer of the embodiment of the present invention.Figure 11 b is a kind of schematic diagram that carries out the second structure of connection in series-parallel electric connection on the second insulating barrier with conductive layer of the embodiment of the present invention.Figure 12 is the cutaway view that the crystal block material a kind of of heap of stone of the embodiment of the present invention further is provided with a reflector.Figure 13 is the cutaway view of LED chip structure that is provided with the non-conductive substrate of the first conductive pole in a kind of use of the embodiment of the present invention.
As shown in Figure 4, the manufacture method S200 of a kind of LED chip of the present embodiment comprises the following steps: to provide a conduction bulk (step S10); One crystal block material (step S20) of heap of stone is provided; Carry out in conjunction with (step S30); Remove epitaxial layer base material (step S40); Make individual light-emitting diodes (step S50); Form one second insulating barrier (step S60); And be electrically connected (step S70).
As shown in Fig. 5 A, one conduction bulk (step S10) is provided, therefore conduction bulk 20 comprises a conductive base 21, for the light-emitting diode of formation level simultaneously and vertical framework, conductive base 21 is divided into and is had a first area 22 and a second area 23.Then be formed with one first insulating barrier 24 on first area 22, the condition of the light-emitting diode of follow-up production technique framework can be provided whereby.Then be formed with a first metal layer 25 again on second area 23 and the first insulating barrier 24, the first metal layer 25 is except providing follow-up integrating step use, and the first metal layer 25 on second area 23 also provides the condition of the light-emitting diode of the vertical framework of follow-up making simultaneously.
As shown in Fig. 5 B, when selecting conductive base 21, conductive base 21 can be the semiconductor wafer substrate, and for example the semiconductor crystal wafer base material can be the semiconductor conductive base 21 of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs; Perhaps conductive base 21 can be for example copper tungsten, molybdenum, copper, tungsten or manganese material ... wait the conductive base 21 with satisfactory electrical conductivity.In addition, conductive base also can use non-conductive substrate 26 and become conductive base after processing, for example conductive base comprises a non-conductive substrate 26 and have a plurality of the first conductive poles 27 in non-conductive substrate 26, each first conductive pole 27 penetrates non-conductive substrate 26 and is electrically connected with the first metal layer 25, and the first conductive pole 27 also provides the function of heat conduction simultaneously.
As shown in Figure 6, provide a crystal block material (step S20) of heap of stone, crystal block material 30 of heap of stone is light-emitting diode crystal block material of heap of stone, and crystal block material 30 of heap of stone includes an epitaxial layer base material 31; One epitaxial layer 32 and one second metal level 33.Epitaxial layer base material 31 is the base materials in order to support and growth LED, is formed with the epitaxial layer 32 of LED on epitaxial layer base material 31.For follow-up combination, the semiconductor side 34 of epitaxial layer 32 namely epitaxial layer 32 with respect to an other side of epitaxial layer base material 31, has formed the second metal level 33.
As shown in Figure 7, carry out in conjunction with (step S30), has one second metal level 33 owing to having the first metal layer 25 on conduction bulk 20 at crystal block material 30 of heap of stone, therefore can be on the basis with material behavior, by being combined into one with crystal block material 30 of heap of stone in conjunction with the first metal layer 25 and the second metal level 33 and then the bulk 20 that will conduct electricity, such combination can make again conducting block material 20 and crystal block material 30 of heap of stone become one in conjunction with bulk 40.
As shown in Figure 8, remove epitaxial layer base material (step S40), conduction bulk 20 becomes one in conjunction with after bulk 40 with crystal block material 30 of heap of stone, and conduction bulk 20 can replace epitaxial layer base material 31 and epitaxial layer 32 support structurally is provided.This moment must be with epitaxial layer base material 31 from removing in conjunction with bulk 40, so that effectively bright dipping of light-emitting diode also can facilitate the making of follow-up each light-emitting diodes pipe electrode after epitaxial layer base material 31 removes in addition.Epitaxial layer 32 is transferred on conduction bulk 20 and removed that epitaxial layer base material 31 is rear has just formed a light-emitting diode bulk 50 in conjunction with bulk 40.
As shown in Figure 9, make individual light-emitting diodes (step S50), after light-emitting diode bulk 50 forms, then light-emitting diode bulk 50 is carried out etching.For the follow-up light emitting diode construction that can produce series and parallel, at first to make light-emitting diode bulk 50 form a plurality of independently light-emitting diodes by etching, therefore stop before must being etched to the first insulating barrier 24 during etching, make the first metal layer 25 become a plurality of independent blocks that are not electrically connected each other.
In etched planning, the condition of production technique framework can be provided due to the first insulating barrier 24 on first area 22, therefore must form at least one the first light-emitting diode 60 on first area 22; Again because the first metal layer 25 on second area 23 and the second metal level 33 can be electrically connected with conductive base 21, therefore provide the condition of making vertical framework, so must form the parallel-connection structure of at least one the second light-emitting diode 70 and at least one the 3rd light-emitting diode 80 on second area 23; Last and then make the first light-emitting diode 60 and the second light-emitting diode 70 and the 3rd light-emitting diode 80 parallel with one another again form cascaded structure.
As shown in figure 10, form one second insulating barrier (step S60), after making individual light-emitting diodes (step S50), therefore for the formation of follow-up series parallel circuits, must form one second insulating barrier 90 to reach necessary electrical isolation at the first light-emitting diode 60, the second light-emitting diode 70 and the 3rd light-emitting diode 80 etched positions.
As shown in Figure 11 A and Figure 11 B, be electrically connected (step S70), after the second insulating barrier 90 completes, then by forming one first conductive layer 91, each first light-emitting diode 60 and each the second light-emitting diode 70 are connected each other on the second insulating barrier 90, make each second light-emitting diode 70 and each the 3rd light-emitting diode 80 in parallel each other by form one second conductive layer 92 on the second insulating barrier 90 again, so can form the circuit of LED with series parallel circuits on same conduction bulk 20.
As shown in figure 12, in order to increase the light extraction efficiency of light-emitting diode, crystal block material 30 ' of heap of stone is when making, and the semiconductor side 34 of epitaxial layer 32 and 33 of the second metal levels can be formed with a reflector 35, and 35 reflection can reach the effect of the light extraction efficiency that increases light-emitting diode by the reflector.reflector 35 is generally to use a dielectric (dielectric) material to be made, because the second light-emitting diode 70 and the 3rd light-emitting diode 80 must be vertical frameworks, therefore must be electrically connected with the second metal level 33 in the semiconductor side 34 of the second light-emitting diode 70 and the 3rd light-emitting diode 80 at least, so at least in the reflector 35 corresponding to the second light-emitting diode 70 and the 3rd light-emitting diode 80 positions, must be formed with a plurality of the second conductive poles 36, so that the semiconductor side 34 of the second light-emitting diode 70 and the 3rd light-emitting diode 80 and the second metal level 33 are electrically connected, the second conductive pole 36 also has the effect of heat conduction simultaneously.
Increase the complexity of manufacturing for fear of technologic contraposition, a plurality of the second conductive poles 36 are not limited in the reflector 35 that is formed on first area 22 or second area 23, and the semiconductor side 34 of each first light-emitting diode 60, the second light-emitting diode 70 and the 3rd light-emitting diode 80 all is electrically connected with the second metal level 33.Be independent and be not electrically connected mutually because the second metal level 33 of the first light-emitting diode 60 correspondences has been etched into, therefore such practice can't affect the making of series circuit.
Please again consult shown in Figure 11 A, with above-mentioned manufacture method, the present invention provides again a kind of embodiment of LED chip structure 200, and it comprises: a conduction bulk 20; At least one the first light-emitting diode 60; At least one the second light-emitting diode 70; At least one the 3rd light-emitting diode 80.
Same when selecting conductive base 21, conductive base 21 can be the semiconductor wafer substrate, and for example the semiconductor crystal wafer base material can be the semiconductor conductive base 21 of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs; Perhaps conductive base 21 can be copper tungsten, molybdenum, copper, tungsten or manganese material ... wait the conductive base 21 with satisfactory electrical conductivity.
As shown in Figure 11 B, conductive base also can use non-conductive substrate 26 and become conductive base after processing, for example conductive base comprises a non-conductive substrate 26 and have a plurality of the first conductive poles 27 in non-conductive substrate 26, each first conductive pole 27 penetrates non-conductive substrate 26 and is electrically connected with the first metal layer 25, and the first conductive pole 27 also provides the function of heat conduction simultaneously.
The first light-emitting diode 60, by a plurality of the second metal levels 33 one of them and a plurality of the first metal layer 25 one of them in conjunction with after, the first light-emitting diode 60 is fixedly arranged on the first insulating barrier 24 of first area 22.
The second light-emitting diode 70, after one second metal level 33 and the first metal layer 25 combinations, same second light-emitting diode 70 that can make is fixedly arranged on second area 23.In addition, the second light-emitting diode 70 and the first light-emitting diode 60 can make each other by one of a plurality of second insulating barriers 90 and one first conductive layer 91 and connect.
The 3rd light-emitting diode 80 after another group one second metal level 33 and the first metal layer 25 combinations, is fixedly arranged on second area 23 the 3rd light-emitting diode 80.The 3rd light-emitting diode 80 also can make in parallel each other by one of a plurality of second insulating barriers 90 and one second conductive layer 92 with the second light-emitting diode 70.
as shown in figure 13, same in order to increase the light extraction efficiency of light-emitting diode, each first light-emitting diode 60, the second light-emitting diode 70 and the 3rd light-emitting diode 80 respectively and each 33 of second metal level can be provided with a reflector 35, to become a vertical framework due to the second light-emitting diode 70 and the 3rd light-emitting diode 80 again, therefore the reflector 35 on second area 23 is interior at least must have a plurality of the second conductive poles 36, so just can make the second light-emitting diode 70 and the 3rd light-emitting diode 80 respectively second metal level 33 corresponding with it be electrically connected, the second same conductive pole 36 also has the function of heat conduction.
The embodiment of above relevant LED chip structure 200 because be manufacture method S200 embodiment manufacturing product out according to LED chip, therefore in detail or the part of identical content will no longer repeat to give unnecessary details one by one.
the above, it is only preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (12)
1. the manufacture method of a LED chip is characterized in that it comprises the following steps:
One conduction bulk is provided, and this conduction bulk comprises: a conductive base, and it has a first area and a second area; One first insulating barrier is formed on this first area; And a first metal layer is formed on this second area and this first insulating barrier;
One crystal block material of heap of stone is provided, and this crystal block material of heap of stone comprises: an epitaxial layer base material; One epitaxial layer is formed on this epitaxial layer base material; And one second metal level is formed at this epitaxial layer with respect to the semiconductor side of an other side of this epitaxial layer base material;
Carry out combination, be by should conduct electricity in conjunction with this first metal layer and this second metal level bulk with should be combined into one to become one in conjunction with bulk by crystal block material of heap of stone;
Removing this epitaxial layer base material, is that this epitaxial layer base material is removed to form a light-emitting diode bulk from this in conjunction with bulk;
Making individual light-emitting diodes, is that this light-emitting diode bulk is carried out etching, makes to form at least one the first light-emitting diode on this first area, makes and forms at least one the second light-emitting diode and at least one the 3rd light-emitting diode on this second area;
Form one second insulating barrier, it is to form this second insulating barrier between this first light-emitting diode, this second light-emitting diode and the 3rd light-emitting diode; And
Be electrically connected, it is on this second insulating barrier, by forming one first conductive layer, each this first light-emitting diode and each this second light-emitting diode are connected each other, make each this second light-emitting diode and each the 3rd light-emitting diode in parallel each other by forming one second conductive layer.
2. the manufacture method of LED chip according to claim 1, is characterized in that wherein said conductive base is the semiconductor wafer substrate.
3. the manufacture method of LED chip according to claim 2 is characterized in that wherein said semiconductor crystal wafer base material is the semiconductor conductive base of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs.
4. the manufacture method of LED chip according to claim 1, is characterized in that wherein said conductive base is the conductive base of copper tungsten, molybdenum, copper, tungsten or manganese material.
5. the manufacture method of LED chip according to claim 1, is characterized in that wherein said conductive base comprises: a non-conductive substrate; And a plurality of the first conductive poles penetrate this non-conductive substrate and make those first conductive poles and the electric connection of this first metal layer.
6. the manufacture method of LED chip according to claim 1, it is characterized in that wherein said semiconductor side and this second metal interlevel are formed with a reflector, be formed with a plurality of the second conductive poles in this reflector to be electrically connected this semiconductor side and this second metal level.
7. LED chip structure is characterized in that it comprises:
One conduction bulk, this conduction bulk comprises: a conductive base, it has a first area and a second area; One first insulating barrier is formed on this first area; And a plurality of the first metal layers are incorporated on this second area and this first insulating barrier independently of one another;
At least one the first light-emitting diode is fixedly arranged on this first insulating barrier after this first metal layer is combined by one of a plurality of second metal levels;
At least one the second light-emitting diode is fixedly arranged on this second area after this first metal layer is combined and this second light-emitting diode and this first light-emitting diode are connected mutually by one of a plurality of second insulating barriers and one first conductive layer by this second metal level; And
At least one the 3rd light-emitting diode is fixedly arranged on after this first metal layer is combined on this second area and parallel with one another by one of those second insulating barriers and one second conductive layer and this second light-emitting diode by this second metal level.
8. LED chip structure according to claim 7, is characterized in that wherein said conductive base is the semiconductor wafer substrate.
9. LED chip structure according to claim 8 is characterized in that wherein said semiconductor crystal wafer base material is the semiconductor conductive base of IV-IV family, III-IV family, II-VI family, silicon, germanium, gallium nitride or GaAs.
10. LED chip structure according to claim 7, is characterized in that wherein said conductive base is the conductive base of copper tungsten, molybdenum, copper, tungsten or manganese material.
11. LED chip structure according to claim 7 is characterized in that wherein said conductive base comprises: a non-conductive substrate; And a plurality of the first conductive poles penetrate this non-conductive substrate and are electrically connected with this first metal layer on this second area.
12. LED chip structure according to claim 7, it is characterized in that wherein each this first light-emitting diode, each this second light-emitting diode and each the 3rd light-emitting diode respectively this second metal interlevel corresponding with it be provided with a reflector, and be provided with in this reflector on this second area a plurality of the second conductive poles make this second light-emitting diode and the 3rd light-emitting diode respectively this second metal level corresponding with it be electrically connected.
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| CN2011103597862A CN103107247A (en) | 2011-11-09 | 2011-11-09 | Light-emitting diode (LED) chip manufacturing method and LED chip structure |
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| CN2011103597862A CN103107247A (en) | 2011-11-09 | 2011-11-09 | Light-emitting diode (LED) chip manufacturing method and LED chip structure |
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| CN2011103597862A Pending CN103107247A (en) | 2011-11-09 | 2011-11-09 | Light-emitting diode (LED) chip manufacturing method and LED chip structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243695A (en) * | 2002-02-21 | 2003-08-29 | Sony Corp | Light emitting element, its fabricating method and display |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
| US20100059763A1 (en) * | 2006-12-22 | 2010-03-11 | Seoul Opto Device Co., Ltd. | Luminous element having a plurality of cells |
| US20110089444A1 (en) * | 2002-07-15 | 2011-04-21 | Epistar Corporation | Light-emitting element |
| CN102208512A (en) * | 2010-03-24 | 2011-10-05 | 日立电线株式会社 | Light emitting diode |
-
2011
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243695A (en) * | 2002-02-21 | 2003-08-29 | Sony Corp | Light emitting element, its fabricating method and display |
| US20110089444A1 (en) * | 2002-07-15 | 2011-04-21 | Epistar Corporation | Light-emitting element |
| US20100059763A1 (en) * | 2006-12-22 | 2010-03-11 | Seoul Opto Device Co., Ltd. | Luminous element having a plurality of cells |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
| CN102208512A (en) * | 2010-03-24 | 2011-10-05 | 日立电线株式会社 | Light emitting diode |
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Application publication date: 20130515 |