CN103094473B - Preparation method of tungsten oxide resistive random access memory - Google Patents
Preparation method of tungsten oxide resistive random access memory Download PDFInfo
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- CN103094473B CN103094473B CN201110344324.3A CN201110344324A CN103094473B CN 103094473 B CN103094473 B CN 103094473B CN 201110344324 A CN201110344324 A CN 201110344324A CN 103094473 B CN103094473 B CN 103094473B
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Abstract
The invention discloses a preparation method of a tungsten oxide resistive random access memory. After a tungsten oxide resistive random access memory unit is formed, the steps of the preparation method comprises: forming a nitrogen silicon compound sacrificial layer on the top surface and the side surface of the tungsten oxide resistive random access memory unit, carrying out etching treatment, forming a side wall barrier layer on the side surface of the tungsten oxide resistive random access memory unit, and forming a top layer metal layer. The preparation method of the tungsten oxide resistive random access memory can eliminate the leakage access between the top layer metal layer and the metal layer of the bottom portion of the tungsten oxide resistive random access memory unit, and therefore the erasing operation window and the reliability degree of the tungsten oxide resistive random access memory can be improved.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit method of manufacturing technology, particularly relate to a kind of preparation method of tungsten oxide resistance-variable storing device.
Background technology
Tungsten oxide resistance-variable storing device utilizes tungsten oxide material resistance value generation reversible transition under electric field action to reach the semiconductor element of storage purpose.The preparation method of existing tungsten oxide resistance-variable storing device comprises step: form an insulating medium layer; The region that lithographic etch process will form described tungsten oxide variable-resistance memory unit is adopted to form through hole; On sidewall surfaces and the lower surface formation titanium nitrogen compound barrier layer of described through hole; In described through hole, described through hole is filled by deposition tungsten completely; Described for the part at the top being positioned at described through hole tungsten oxidation is formed described tungsten oxide variable-resistance memory unit, can be thickening after described tungsten oxidation, make the top of the described tungsten oxide variable-resistance memory unit formed higher than described insulating medium layer surface; The bottom of described tungsten oxide variable-resistance memory unit contacts with described tungsten, and the side being positioned at below described insulating medium layer surface of described tungsten oxide variable-resistance memory unit contacts with described titanium nitrogen compound barrier layer.Finally on described insulating medium layer and described tungsten oxide variable-resistance memory unit, form top layer metallic layer.Described top layer metallic layer can cover the top surface of described tungsten oxide variable-resistance memory unit and side and be formed and contact.At the lateral location place being positioned at described insulating medium layer surface of described tungsten oxide variable-resistance memory unit, described top layer metallic layer can contact with described titanium nitrogen compound barrier layer, by the electric action on described titanium nitrogen compound barrier layer, finally leakage path can be formed between described top layer metallic layer and the described tungsten bottom described tungsten oxide variable-resistance memory unit and the metal level bottom described tungsten.The path of described leakage path and described tungsten oxide variable-resistance memory unit forms a parallel-connection structure, finally can cause interference to the read-write operation of memory cell, can reduce erasable action pane and the reliability of tungsten oxide resistance-variable storing device.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of preparation method of tungsten oxide resistance-variable storing device, the leakage path of the metal interlevel of the bottom of top layer metallic layer and tungsten oxide variable-resistance memory unit can be eliminated, thus erasable action pane and the reliability of tungsten oxide resistance-variable storing device can be improved.
For solving the problems of the technologies described above, the invention provides a kind of preparation method of tungsten oxide resistance-variable storing device, after formation tungsten oxide variable-resistance memory unit, comprising step:
Step one, depositing technics is adopted to form nitrogen silicon compound sacrifice layer at the top surface of described tungsten oxide variable-resistance memory unit and side.
Step 2, etch-back process is carried out to described nitrogen silicon compound sacrifice layer, the described nitrogen silicon compound sacrifice layer being positioned at the top surface of described tungsten oxide variable-resistance memory unit is removed, forms the side wall barrier layer be made up of described nitrogen silicon compound sacrifice layer in the side of described tungsten oxide variable-resistance memory unit.
Step 3, formation top layer metallic layer, described top layer metallic layer contacts with the top surface of described tungsten oxide variable-resistance memory unit; Described top layer metallic layer and the metal level be positioned at bottom described tungsten oxide variable-resistance memory unit are isolated by described side wall barrier layer.
Further improvement is, the step forming tungsten oxide variable-resistance memory unit is: form an insulating medium layer; The region that lithographic etch process will form described tungsten oxide variable-resistance memory unit is adopted to form through hole; On sidewall surfaces and the lower surface formation titanium nitrogen compound barrier layer of described through hole; In described through hole, described through hole is filled by deposition tungsten completely; Described for the part at the top being positioned at described through hole tungsten oxidation is formed described tungsten oxide variable-resistance memory unit, can be thickening after described tungsten oxidation, make the top of the described tungsten oxide variable-resistance memory unit formed higher than described insulating medium layer surface; The bottom of described tungsten oxide variable-resistance memory unit contacts with described tungsten, the side being positioned at below described insulating medium layer surface of described tungsten oxide variable-resistance memory unit contacts with described titanium nitrogen compound barrier layer, and the described top layer metallic layer of described titanium nitrogen compound barrier layer and follow-up formation is isolated by described side wall barrier layer.
Further improvement is, described insulating medium layer be formed at be formed bottom circuitous pattern substrate on, described bottom circuitous pattern is deposit one deck bottom metal layer or deposit one deck bottom silicon on the substrate, formed by lithographic etch process, described bottom circuitous pattern is connected with the described titanium nitrogen compound barrier layer contact being formed at described via bottoms again.
Further improvement is, described tungsten oxidation adopts thermal oxidation technology to be oxidized, and the temperature of described thermal oxidation is 400 DEG C ~ 800 DEG C, and the thickness of the described tungsten oxide variable-resistance memory unit formed after oxidation is 200 dust ~ 2000 dusts.
Further improvement is, contact hole and described tungsten oxide variable-resistance memory unit integrate formation, during integrated described contact hole, after step 2, before step 3, also comprise step: adopt lithographic etch process to protect the region photoetching resist that will form described tungsten oxide variable-resistance memory unit, come out to the region that will form described contact hole; With photoetching resist for mask, adopt dry etch process the described tungsten oxide variable-resistance memory unit and described side wall barrier layer that are formed at the region of described contact hole to be removed, described contact hole is only made up of the described tungsten be filled in described through hole and described titanium nitrogen compound barrier layer.
The inventive method is by forming side wall barrier layer in the side of tungsten oxide variable-resistance memory unit, top layer metallic layer can be made and be positioned at the metal level isolation bottom tungsten oxide variable-resistance memory unit, thus the leakage path of the metal interlevel of the bottom of top layer metallic layer and tungsten oxide variable-resistance memory unit can be eliminated, finally can improve erasable action pane and the reliability of tungsten oxide resistance-variable storing device.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1-Fig. 8 is the device profile map in each step of embodiment of the present invention method;
Fig. 9 is embodiment of the present invention method flow diagram.
Embodiment
As shown in Figure 9, be embodiment of the present invention method flow diagram; As shown in Figures 1 to 8, be device profile map in each step of embodiment of the present invention method.
The preparation method of embodiment of the present invention tungsten oxide resistance-variable storing device comprises the steps:
As shown in Figure 1, first a substrate 10 is selected, described substrate 10 is semiconductor wafer substrate, and described substrate 10 also can be isolate supports circuit substrate, or surface coverage has insulating barrier and the silicon crystal having circuit to be connected with the bottom circuitous pattern 33 of follow-up formation.
Described substrate 10 is formed bottom circuitous pattern 3, forming described bottom circuitous pattern 3 method is, first deposit one deck bottom metal layer or deposit one deck bottom silicon, form underlying metal line by lithographic etch process again or form bottom silicon line, forming described bottom circuitous pattern 3 by described underlying metal line or by described bottom silicon line.
The substrate 10 being formed with bottom circuitous pattern 3 forms insulating medium layer 4.
The region that lithographic etch process will form described tungsten oxide variable-resistance memory unit 5 is adopted to form through hole.
On sidewall surfaces and the lower surface formation titanium nitrogen compound barrier layer 2 of described through hole.In described through hole, described through hole is filled by deposition tungsten 1 completely.Described bottom circuitous pattern 3 is connected with described titanium nitrogen compound barrier layer 2 contact being formed at described via bottoms.
As shown in Figure 2, described for the part at the top being positioned at described through hole tungsten 1 is oxidized and forms described tungsten oxide variable-resistance memory unit 5, described tungsten 1 is oxidized and adopts thermal oxidation technology to be oxidized, the temperature of described thermal oxidation is 400 DEG C ~ 800 DEG C, and the thickness of the described tungsten oxide variable-resistance memory unit 5 formed after oxidation is 200 dust ~ 2000 dusts.
Can be thickening after described tungsten 1 is oxidized, make the top of the described tungsten oxide variable-resistance memory unit 5 formed higher than described insulating medium layer 4 surface; The bottom of described tungsten oxide variable-resistance memory unit 5 contacts with described tungsten 1, and the side being positioned at described insulating medium layer 4 surface following of described tungsten oxide variable-resistance memory unit 5 contacts with described titanium nitrogen compound barrier layer 2.
After formation tungsten oxide variable-resistance memory unit 5, also comprise the steps:
Step one, as shown in Figure 3, adopt depositing technics to form nitrogen silicon compound sacrifice layer 6 at the top surface of described tungsten oxide variable-resistance memory unit 5 and side, described nitrogen silicon compound sacrifice layer 6 also can be deposited to outside described tungsten oxide variable-resistance memory unit 5 described in other insulating medium layer 4 surface simultaneously.
Step 2, as shown in Figure 4, etch-back process is carried out to described nitrogen silicon compound sacrifice layer 6, the described nitrogen silicon compound sacrifice layer 6 being positioned at the top surface of described tungsten oxide variable-resistance memory unit 5 is removed, forms the side wall barrier layer 61 be made up of described nitrogen silicon compound sacrifice layer 6 in the side of described tungsten oxide variable-resistance memory unit 5.
Described tungsten 1 in described through hole is filled in not all for the formation of described tungsten oxide variable-resistance memory unit 5 in the embodiment of the present invention, described tungsten 1 in the described through hole of subregion is last for the formation of contact hole, namely described contact hole and described tungsten oxide variable-resistance memory unit 5 integrate formation, comprise step: as shown in Figure 5, adopt lithographic etch process to protect the region photoetching resist 7 that will form described tungsten oxide variable-resistance memory unit 5, come out to the region that will form described contact hole; As shown in Figure 6, with photoetching resist 7 for mask, adopt dry etch process the described tungsten oxide variable-resistance memory unit 5 and described side wall barrier layer 61 that are formed at the region of described contact hole to be removed, described contact hole is only made up of the described tungsten 1 be filled in described through hole and described titanium nitrogen compound barrier layer 2.
Step 3, formation top layer metallic layer 8, comprise step: as shown in Figure 7, first on whole described insulating medium layer, form described top layer metallic layer 8; Adopt again lithographic etch process with photoresist figure 9 define the figure of the described top layer metallic layer 8 that will be formed; As shown in Figure 8, be mask with described photoetching offset plate figure 9, etching forms the figure of described top layer metallic layer 8, and the described top layer metallic layer 8 finally formed contacts with the top surface of described tungsten oxide variable-resistance memory unit 5; Described top layer metallic layer 8 and the metal level be positioned at bottom described tungsten oxide variable-resistance memory unit 5 are isolated by described side wall barrier layer 61, namely the position that described side wall barrier layer 61 can intersect on the surface of described tungsten oxide variable-resistance memory unit 5 and described insulating medium layer 4 stops that described top layer metallic layer 8 contacts with described titanium nitrogen compound barrier layer 2, thus can eliminate at described top layer metallic layer 8, described titanium nitrogen compound barrier layer 2, the leakage path that formed between described tungsten 1 and described bottom circuitous pattern 3.Described top layer metallic layer 8 is also formed with each described contact hole and is connected, for drawing the described bottom circuitous pattern 3 be positioned under each described contact hole.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (4)
1. a preparation method for tungsten oxide resistance-variable storing device, is characterized in that: after formation tungsten oxide variable-resistance memory unit, comprise step:
Step one, depositing technics is adopted to form nitrogen silicon compound sacrifice layer at the top surface of described tungsten oxide variable-resistance memory unit and side;
Step 2, etch-back process is carried out to described nitrogen silicon compound sacrifice layer, the described nitrogen silicon compound sacrifice layer being positioned at the top surface of described tungsten oxide variable-resistance memory unit is removed, forms the side wall barrier layer be made up of described nitrogen silicon compound sacrifice layer in the side of described tungsten oxide variable-resistance memory unit;
Step 3, formation top layer metallic layer, described top layer metallic layer contacts with the top surface of described tungsten oxide variable-resistance memory unit; Described top layer metallic layer and the metal level be positioned at bottom described tungsten oxide variable-resistance memory unit are isolated by described side wall barrier layer;
The step forming tungsten oxide variable-resistance memory unit is:
Form an insulating medium layer;
The region that lithographic etch process will form described tungsten oxide variable-resistance memory unit is adopted to form through hole;
On sidewall surfaces and the lower surface formation titanium nitrogen compound barrier layer of described through hole;
In described through hole, described through hole is filled by deposition tungsten completely;
Described for the part at the top being positioned at described through hole tungsten oxidation is formed described tungsten oxide variable-resistance memory unit, can be thickening after described tungsten oxidation, make the top of the described tungsten oxide variable-resistance memory unit formed higher than described insulating medium layer surface; The bottom of described tungsten oxide variable-resistance memory unit contacts with described tungsten, the side being positioned at below described insulating medium layer surface of described tungsten oxide variable-resistance memory unit contacts with described titanium nitrogen compound barrier layer, and the described top layer metallic layer of described titanium nitrogen compound barrier layer and follow-up formation is isolated by described side wall barrier layer.
2. the preparation method of tungsten oxide resistance-variable storing device as claimed in claim 1, it is characterized in that: described insulating medium layer be formed at be formed bottom circuitous pattern substrate on, described bottom circuitous pattern is deposit one deck bottom metal layer or deposit one deck bottom silicon on the substrate, formed by lithographic etch process, described bottom circuitous pattern is connected with the described titanium nitrogen compound barrier layer contact being formed at described via bottoms again.
3. the preparation method of tungsten oxide resistance-variable storing device as claimed in claim 1, it is characterized in that: described tungsten oxidation adopts thermal oxidation technology to be oxidized, the temperature of described thermal oxidation is 400 DEG C ~ 800 DEG C, and the thickness of the described tungsten oxide variable-resistance memory unit formed after oxidation is 200 dust ~ 2000 dusts.
4. the preparation method of tungsten oxide resistance-variable storing device as claimed in claim 1, it is characterized in that: contact hole and described tungsten oxide variable-resistance memory unit integrate formation, during integrated described contact hole, after step 2, before step 3, also comprise step: adopt lithographic etch process to protect the region photoetching resist that will form described tungsten oxide variable-resistance memory unit, come out to the region that will form described contact hole; With photoetching resist for mask, adopt dry etch process the described tungsten oxide variable-resistance memory unit and described side wall barrier layer that are formed at the region of described contact hole to be removed, described contact hole is only made up of the described tungsten be filled in described through hole and described titanium nitrogen compound barrier layer.
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| CN105514264B (en) * | 2014-09-24 | 2018-09-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of resistance-variable storing device and preparation method thereof, electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005113A (en) * | 2005-12-27 | 2007-07-25 | 旺宏电子股份有限公司 | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
| CN101572246A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Resistance memory an a method for fabricating integrated circuit with same |
| CN101572248A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Resistance memory and method for fabricating integrated circuit with same |
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| US7820997B2 (en) * | 2006-05-30 | 2010-10-26 | Macronix International Co., Ltd. | Resistor random access memory cell with reduced active area and reduced contact areas |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005113A (en) * | 2005-12-27 | 2007-07-25 | 旺宏电子股份有限公司 | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
| CN101572246A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Resistance memory an a method for fabricating integrated circuit with same |
| CN101572248A (en) * | 2008-04-28 | 2009-11-04 | 中芯国际集成电路制造(北京)有限公司 | Resistance memory and method for fabricating integrated circuit with same |
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