CN103094452A - 一种led的封装方法 - Google Patents

一种led的封装方法 Download PDF

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Publication number
CN103094452A
CN103094452A CN2012104557706A CN201210455770A CN103094452A CN 103094452 A CN103094452 A CN 103094452A CN 2012104557706 A CN2012104557706 A CN 2012104557706A CN 201210455770 A CN201210455770 A CN 201210455770A CN 103094452 A CN103094452 A CN 103094452A
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Prior art keywords
chip
electrode
led
main body
light
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Inventor
孔德宝
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NANJING JIANGNING DISTRICT DINGMAO ELECTRONIC TECHNOLOGY CENTER
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NANJING JIANGNING DISTRICT DINGMAO ELECTRONIC TECHNOLOGY CENTER
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Priority to CN2012104557706A priority Critical patent/CN103094452A/zh
Publication of CN103094452A publication Critical patent/CN103094452A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

一种LED的封装方法，包括以下步骤：首先形成主体后在第一电极（1）及第二电极（2）上安装第一芯片（3）和第二芯片（4）；将第一电极（1）及第二电极（2）引线并作为主体框架；把第一芯片（3）和第二芯片（4）安装到第一电极（1）及第二电极（2）上；用芯片焊接部件（5）把第一电极（1）、第二电极（2）和第一芯片（3）和第二芯片（4）进行连接；之后按照需要体现的LED芯片的颜色把透明或包含荧光体的荧光树脂点胶到主体的凹槽（6）上，形成填充凹槽（6）的透光部；然后进行2次固化，硬化透光部使其与主体及其他结构的结合更加牢固。本发明可以有效增加透光效果。

Description

一种LED的封装方法
技术领域
本发明属于LED封装领域。
背景技术
LED一般用表面粘着型方式封装，以阵列形态安装在印刷电路板上 ，一般来说，LED封装是指由2个引线以及部分纳入内侧，透光部的充填间隔基形成凹槽而制造的模版外壳，凹槽内引线电极上部表面安装的LED芯片，连接引线电极和LED芯片的贴装部位所形成。模版外壳主要由PPA等树脂类的塑料形成，透光部是在凹槽内部密闭LED芯片，根据LED芯片的色彩可以分为含有荧光体或透明树脂，led封装按使用的装置要求多样的尺寸及辉度，Led封装的尺寸主要是受到模版外壳的幅度及高度影响，辉度主要受到芯片的性能，但是透光的透光性树脂的特性及厚度也对辉度的影响比较大，特别是LED封装的尺寸变大时，凹槽的表面积也增多凹槽充填的透光性树脂的量也增多，减少辉度的短处。并且要求LED封装高度的时候凹槽的高度也相应增加，透光性树脂的厚度也增加，增加辉度较难。并且要求模版外壳的侧壁高度增加时芯片产生的光透过透光性树脂的光射到侧壁的量增多。因此可能发生光的吸收及妨碍光按照指向角射出，所以需要满足LED封装的尺寸的同时保持光效率及指向角的设计。
发明内容
本发明的目的是提供一种克服现有技术中不足的一种LED的封装方法。
本发明通过以下技术方案实现发明目的；
一种LED的封装方法，包括以下步骤：
① 首先形成主体后在第一电极及第二电极上安装第一芯片和第二芯片；
② 将第一电极及第二电极引线并作为主体框架；
③ 把第一芯片和第二芯片安装到第一电极及第二电极上； 
④ 用芯片焊接部件把第一电极、第二电极和第一芯片和第二芯片进行连接；
⑤ 之后按照需要体现的LED芯片的颜色把透明或包含荧光体的荧光树脂点胶到主体的凹槽上，形成填充凹槽的透光部；
⑥ 然后进行2次固化，硬化透光部使其与主体及其他结构的结合更加牢固。
本发明中所述的Led芯片为200nm~900nm的波长幅。
本发明中所述的Led芯片为单芯片或多芯片。 
本发明中所述的芯片焊接部件为金线。
有益效果：
  本发明的封装方法可以有效增加透光效果。
附图说明
图1是安装有本发明的整体结构示意图。
 
具体实施方式
一种LED的封装方法，包括以下步骤：首先形成主体后在第一电极1及第二电极2上安装第一芯片3和第二芯片4；将第一电极1及第二电极2引线并作为主体框架；把第一芯片3和第二芯片4安装到第一电极1及第二电极2上； 
用芯片焊接部件5把第一电极1、第二电极2和第一芯片3和第二芯片4进行连接；之后按照需要体现的LED芯片的颜色把透明或包含荧光体的荧光树脂点胶到主体的凹槽6上，形成填充凹槽6的透光部；然后进行2次固化，硬化透光部使其与主体及其他结构的结合更加牢固。
本发明中的Led芯片为200nm~900nm的波长幅，Led芯片为单芯片或多芯片，芯片焊接部件为金线。最后为了从发光装置中分离成个别元件，把固定到主体的第一电极1及第二电极2从引线框架分离，完成发光装置的封装。

Claims (4)

1.一种LED的封装方法，其特征在于包括以下步骤：
首先形成主体后在第一电极（1）及第二电极（2）上安装第一芯片（3）和第二芯片（4）；
将第一电极（1）及第二电极（2）引线并作为主体框架；
把第一芯片（3）和第二芯片（4）安装到第一电极（1）及第二电极（2）上； 
用芯片焊接部件（5）把第一电极（1）、第二电极（2）和第一芯片（3）和第二芯片（4）进行连接；
之后按照需要体现的LED芯片的颜色把透明或包含荧光体的荧光树脂点胶到主体的凹槽（6）上，形成填充凹槽（6）的透光部；
⑥然后进行2次固化，硬化透光部使其与主体及其他结构的结合更加牢固。
2.根据权利要求1所述的一种LED的封装方法，其特征在于：所述的Led芯片为200nm~900nm的波长幅。
3.根据权利要求1所述的一种LED的封装方法，其特征在于：所述的Led芯片为单芯片或多芯片。
4. 根据权利要求1所述的一种LED的封装方法，其特征在于：所述的芯片焊接部件为金线。
CN2012104557706A 2012-11-14 2012-11-14 一种led的封装方法 Pending CN103094452A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157505A (zh) * 2011-01-20 2011-08-17 日月光半导体制造股份有限公司 发光模块
US20110215349A1 (en) * 2010-04-24 2011-09-08 Joong In An Light emitting device and light unit having the same
CN102185078A (zh) * 2011-03-30 2011-09-14 深圳雷曼光电科技股份有限公司 贴片式户外led的封装结构及封装方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110215349A1 (en) * 2010-04-24 2011-09-08 Joong In An Light emitting device and light unit having the same
CN102157505A (zh) * 2011-01-20 2011-08-17 日月光半导体制造股份有限公司 发光模块
CN102185078A (zh) * 2011-03-30 2011-09-14 深圳雷曼光电科技股份有限公司 贴片式户外led的封装结构及封装方法

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Application publication date: 20130508