CN103094449B - Gallium nitride based light emitting diode and preparation method thereof - Google Patents
Gallium nitride based light emitting diode and preparation method thereof Download PDFInfo
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- CN103094449B CN103094449B CN201310024710.3A CN201310024710A CN103094449B CN 103094449 B CN103094449 B CN 103094449B CN 201310024710 A CN201310024710 A CN 201310024710A CN 103094449 B CN103094449 B CN 103094449B
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- electronic barrier
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 42
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000010936 titanium Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000010301 surface-oxidation reaction Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- -1 annealed process Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
The invention discloses a kind of semiconductor light-emitting elements manufacture method, is more particularly a kind ofly have gallium nitride based light emitting diode of high reflectance current extending and preparation method thereof.This gallium nitride based light emitting diode, at least comprises: gallium nitride-based epitaxial layer, comprises n-layer, luminescent layer and p-type layer; Current extending, be formed on the part surface of described p-type layer, comprise Ag reflector and electronic barrier layer, wherein said electronic barrier layer covers on described Ag reflector, the oxidized formation one deck oxide insulating layer in surface, thus the effect playing block electrons diffusion and extend current; Oxidic transparent conducting film, the epi-layer surface covering described current barrier layer He expose; P, N electrode, connect described p-type layer and n-layer respectively.
Description
Technical field
The present invention relates to a kind of semiconductor light-emitting elements manufacture method, is more particularly a kind ofly have gallium nitride based light emitting diode of high reflectance current extending and preparation method thereof.
Background technology
The good photoelectric characteristics such as the light-emitting diode of Sony ericsson mobile comm ab has low energy consumption, the high life, good stability, and volume is little, and fast response time and emission wavelength are stable, are widely used in the fields such as illumination, household electrical appliances, display screen and indicator light.The progress that this type luminescent device is all existing considerable in light efficiency, useful life etc., promises to be a new generation's illumination and luminescent device main flow.
In recent years, in order to avoid p-electrode blocking and absorbing LED luminescence as far as possible, usually introduce current barrier layer in the inside of LED chip with restriction or the luminescence significantly reducing active layer below p-electrode.Such as, insulating material (as silica, silicon nitride etc.) is inserted as current barrier layer between p-type epitaxial layer and p-type contact metal level, its size and position and p-electrode roughly the same, greatly can improve blocking and extinction of p-electrode like this, general insulating material and GaN adhesiveness poor, under the effect of bonding wire push-pull effort, P electrode easily comes off from GaN surface, though immediately below barrier layer, basic no current directly injects in addition, but the fiber waveguide propagated at active layer still can come out from current barrier layer, is absorbed afterwards by light-absorbing electrodes.
Summary of the invention
The invention discloses a kind of gallium nitride based light emitting diode and preparation method thereof, it has high reflectance current blocking structures.
According to an aspect of the present invention: the manufacture method of gallium nitride based light emitting diode, comprises the following steps: 1) a gallium nitride-based epitaxial sheet is provided, comprises n-layer, luminescent layer and p-type layer; 2) on the part surface of p-type layer, form Ag reflector and electronic barrier layer, wherein said electronic barrier layer covers on described Ag reflector; 3) deposition oxide transparency conducting layer, its p-type layer surface covering described electronic barrier layer and expose; 4) described epitaxial wafer is carried out annealing in process, the oxidized formation monoxide insulating barrier in electronic barrier layer surface, thus current extending is formed between described oxidic transparent conductive layers and p-type layer, it comprises Ag reflector, electronic barrier layer and oxide insulating layer, plays the effect of block electrons diffusion and extend current; 5) on the epitaxial wafer through above process, P, N electrode is made; 6) by described epitaxial wafer through grinding thinning and being divided into core grain.
In certain embodiments, in described step 2) in the material of electronic barrier layer comprise Ti element, can be Ti or TiW, form metal thin film structure Ag/Ti or Ag/TiW with Ag reflector, and in the annealing process of step 4), the oxidized formation oxide insulating layer in top layer.
In certain embodiments, in described step 2) in Ag reflector thickness be 500 ~ 3000 dusts, ensure its reflectivity.
In certain embodiments, in described step 2) in the thickness of electronic barrier layer be enough to stop that oxygen is to the expansion of Ag reflector and to possess certain insulation property after annealing.
In certain embodiments, in described step 2) in the thickness of electronic barrier layer be 500 ~ 2000 dusts.
In certain embodiments, in step 3), nesa coating is the film containing O, and the surface being enough to be oxidized electronic barrier layer in its annealing process forms oxide insulating layer, and stops O to diffuse to further in the middle of Ag reflector.
In certain embodiments, in step 4), described annealing temperature is between 400 ° of C-500 ° of C, and atmosphere is O
2or N
2.
According to an aspect of the present invention, gallium nitride based light emitting diode, comprising: gallium nitride-based epitaxial layer, comprises n-layer, luminescent layer and p-type layer; Current extending, be formed on the part surface of described p-type layer, comprise Ag reflector and electronic barrier layer, wherein said electronic barrier layer covers on described Ag reflector, the oxidized formation one deck oxide insulating layer in surface, thus the effect playing block electrons diffusion and extend current; Oxidic transparent conducting film, the epi-layer surface covering described current barrier layer He expose; P, N electrode, connect described p-type layer and n-layer respectively.
In certain embodiments, described Ag reflector thickness is 500 ~ 3000 dusts.
In certain embodiments, the material of described electronic barrier layer comprises Ti element.
In certain embodiments, described current barrier layer comprises Ag/Ti or Ag/TiW.
In certain embodiments, the thickness of described electronic barrier layer is 500 ~ 2000 dusts.
In certain embodiments, described oxide insulating layer is titanium dioxide.
In certain embodiments, the projection of described P electrode on normal vector is corresponding with described current barrier layer.
In the present invention, the catoptric arrangement be made up of Ag reflector and electronic barrier layer is implanted between P-type layer and oxidic transparent conductive layers, pass through annealing in process, be rich in the transparent current extending of O atom by electronic barrier layer superficial oxidation, form the oxide of insulation, thus formation has high reflectance current extending.Meanwhile, insulating oxide can be used as again diffusion impervious layer (Diffusion Barrier), prevents Ag reflector oxidized, and reflectivity declines, and ensures that photoelectric efficiency is improved.
Other features and advantages of the present invention will be set forth in the following description, and, partly become apparent from specification, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in specification, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, together with embodiments of the present invention for explaining the present invention, is not construed as limiting the invention.In addition, accompanying drawing data describe summary, is not draw in proportion.
Fig. 1 is the Making programme figure according to a kind of GaN base light-emitting diode chip for backlight unit of the invention process.
Fig. 2 ~ Fig. 6 is the section of structure according to a kind of GaN base LED chip preparation process of the invention process.Wherein, Fig. 6 is the final horizontal structure LED chip structure profile obtained.
In figure, each label represents:
100: epitaxial wafer; 101: growth substrates; 102:n-GaN layer; 103: luminescent layer; 104:p-GaN layer; 200:Ag/Ti or Ag/TiW thin film metal layer; 300: catoptric arrangement; 301: oxide insulating layer; 400: nesa coating; 502:p electrode; 501:n electrode.
Embodiment
Below in conjunction with schematic diagram being described in more detail as method LED chip of the present invention, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
Embodiment discloses a kind of gallium nitride LED chip structure and preparation method thereof below, it implants the catoptric arrangement be made up of Ag reflector and electronic barrier layer between P-type layer and oxidic transparent conductive layers, pass through annealing in process, be rich in the transparent current extending of O atom by electronic barrier layer superficial oxidation, form the oxide of insulation, thus formation has high reflectance current extending.Concrete steps as shown in Figure 1, mainly comprise step S01 ~ S07:
S01: a GaN base LED is provided;
S02: clean, dry described LED;
S03: be etched into pattern at epitaxial wafer deposited on silicon Ag/Ti or Ag/TiW metallic film;
S04: deposition of transparent conductive film, it covers described metallic film and epitaxial layers surface extends;
S05: annealing, forms insulation oxide at reflective structured surface;
S06: make P, N electrode;
S07: thinning segmentation epitaxial wafer, forms LED chip.
Wherein, in step S01, GaN base LED generally comprises n-GaN layer, luminescent layer and p-GaN layer; HCl cleaning is specifically comprised, the steps such as BOE cleaning and chloroazotic acid cleaning in step S02; In step S03, Ag/Ti or Ag/TiW film metal is disposable evaporation, prevent Ag oxidized in atmosphere, Ag/Ti or Ag/TiW metallic film is etched formation pattern, can be corresponding with the position of follow-up P electrode, concrete grammar is: first utilize gold-tinted photoetching technique to depict required figure described GaN base LED, is then placed in BOE solution and removes part Ti or TiW layer, finally removes Ag layer with Ag etching solution; In described step S04, nesa coating is the film (as ITO or ZnO etc.) being rich in O, so that in annealing process, top layer Ti or TiW is oxidized, forms Ti oxide insulating layer, stops O to diffuse in the middle of Ag reflector further simultaneously; In step S05, in nitrogen or oxygen atmosphere, carry out annealing in process, annealing temperature is between 400 ° of C-480 ° of C, and both ensured that transparency conducting layer and p-GaN can form ohmic contact, and avoided again Ag reflector to assemble under superhigh temperature state, atmosphere is O
2or N
2.
Below in conjunction with preferred embodiments and drawings, enforcement of the present invention is described further.
Embodiment
Please refer to Fig. 2 ~ Fig. 6, a kind of manufacture method with the GaN base LED chip of the current extending of high reflectance, comprises step below.
First, provide a LED 100, this LED comprises growth substrates 101, n-GaN layer 102, luminescent layer 103 and p-GaN layer 104, and epitaxial wafer is cleaned, dry process, comprise HCl cleaning, BOE cleaning and chloroazotic acid cleaning etc.
Next step, at p-GaN layer 104 disposable evaporation Ag/Ti or Ag/TiW film metal 200 on the surface, its section of structure as shown in Figure 3, wherein Ag thickness can be 500 ~ 3000 dusts (preferred range value is 800 ~ 1200 dusts), and the thickness of Ti or TiW is 500 ~ 2000 dusts (preferred range value is 500 ~ 1000 dusts).
Next step, patterned film metal 200, forms catoptric arrangement 300.The projection of catoptric arrangement 300 on normal vector is corresponding with P electrode, gold-tinted photoetching technique can be utilized to define the pattern of film metal, then there is by evaporation the epitaxial wafer 100 of film metal 200 to be placed in BOE solution and remove Ti or TiW layer, then remove Ag layer with Ag etching solution and form catoptric arrangement 300, its section of structure as shown in Figure 4.
Next step, adopt the deposited on silicon nesa coating 400 of mode at p-GaN layer 104 and catoptric arrangement 300 of sputtering or evaporation, its section of structure as shown in Figure 5.The material of nesa coating 400 is the film being rich in O, can be ITO or ZnO.
Next step, be installed on O by the epitaxial wafer through aforementioned processing
2or N
2carry out annealing in process in environment, annealing temperature is 450 DEG C.By annealing, the Ti on catoptric arrangement 400 surface is oxidized by the transparent current extending being rich in O atom, forms insulation oxide TiO
2301.
Next step, make P, N electrode by aforementioned epitaxial wafer, and carry out unification process, and form LED chip, its section of structure as shown in Figure 6.
In the present embodiment, at deposited on silicon nesa coating ITO or ZnO of catoptric arrangement Ag/Ti or Ag/TiW metallic film, annealed process, Ti or TiW on catoptric arrangement Ag/Ti or Ag/TiW surface is oxidized by the transparent current extending being rich in O atom, forms the Ti oxide 301 of insulation.Ti oxide, on the one hand as diffusion impervious layer, prevents the oxidized back reflection rate in Ag reflector from declining, so can ensure that photoelectric efficiency is improved; On the other hand, can be used as current extending, electric current can not be gathered in below P electrode.
Claims (11)
1. the manufacture method of gallium nitride based light emitting diode, comprises the following steps:
1) a gallium nitride-based epitaxial sheet is provided, comprises n-layer, luminescent layer and p-type layer;
2) on the part surface of p-type layer, form Ag reflector and electronic barrier layer, wherein said electronic barrier layer covers on described Ag reflector;
3) deposition is containing the oxidic transparent conductive layers of O, its p-type layer surface covering described electronic barrier layer and expose;
4) described epitaxial wafer is carried out annealing in process, described electronic barrier layer surface oxidation is formed monoxide insulating barrier by the O contained in described oxidic transparent conductive layers, O is stoped to diffuse in the middle of Ag reflector further, thus current extending is formed between described oxidic transparent conductive layers and p-type layer, it comprises described Ag reflector, electronic barrier layer and oxide insulating layer, plays the effect of block electrons diffusion and extend current;
5) on the epitaxial wafer through above process, P, N electrode is made;
6) by described epitaxial wafer through grinding thinning and being divided into core grain.
2. the manufacture method of gallium nitride based light emitting diode according to claim 1, is characterized in that: described step 2) described in the material of electronic barrier layer comprise Ti element.
3. the manufacture method of gallium nitride based light emitting diode according to claim 2, is characterized in that: the thickness of described electronic barrier layer is enough to stop that oxygen is to the expansion of Ag reflector, and possesses certain insulation property after annealing.
4. the manufacture method of gallium nitride based light emitting diode according to claim 3, is characterized in that: the thickness of described electronic barrier layer is 500 ~ 2000 dusts.
5. the manufacture method of gallium nitride based light emitting diode according to claim 1, is characterized in that: in step 4), and described annealing temperature is 400 ° of C ~ 500 ° C, and atmosphere is O
2or N
2.
6. gallium nitride based light emitting diode, comprising:
Gallium nitride-based epitaxial layer, comprises n-layer, luminescent layer and p-type layer;
Current extending, is formed on the part surface of described p-type layer, comprises Ag reflector and electronic barrier layer, and wherein said electronic barrier layer covers on described Ag reflector;
Oxidic transparent conductive layers, the epi-layer surface covering described electronic barrier layer He expose;
P, N electrode, connect described p-type layer and n-layer respectively;
It is characterized in that: described oxidic transparent conductive layers is the film containing O, its surface being oxidized described electronic barrier layer in annealing process forms one deck oxide insulating layer, stop O to diffuse to further in the middle of Ag reflector, thus play the effect of block electrons diffusion and extend current.
7. gallium nitride based light emitting diode according to claim 6, is characterized in that: the material of described electronic barrier layer comprises Ti element.
8. gallium nitride based light emitting diode according to claim 7, is characterized in that: described electronic barrier layer comprises Ti or TiW.
9. gallium nitride based light emitting diode according to claim 7, is characterized in that: the thickness of described electronic barrier layer is 500 ~ 2000 dusts.
10. gallium nitride based light emitting diode according to claim 7, is characterized in that: described oxide insulating layer is titanium dioxide.
11. gallium nitride based light emitting diodes according to claim 6, is characterized in that: the projection of described P electrode on normal vector is corresponding with described current extending.
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| CN101807650A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Gallium nitride-based high-brightness light-emitting diode with distributed Bragg reflecting layer and manufacturing process thereof |
| CN102299218A (en) * | 2011-08-24 | 2011-12-28 | 上海蓝光科技有限公司 | Light emitting diode and manufacturing method thereof |
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
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| JP5045248B2 (en) * | 2007-06-01 | 2012-10-10 | 日亜化学工業株式会社 | Semiconductor light emitting device and manufacturing method thereof |
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| CN101807650A (en) * | 2010-03-19 | 2010-08-18 | 厦门市三安光电科技有限公司 | Gallium nitride-based high-brightness light-emitting diode with distributed Bragg reflecting layer and manufacturing process thereof |
| CN102299218A (en) * | 2011-08-24 | 2011-12-28 | 上海蓝光科技有限公司 | Light emitting diode and manufacturing method thereof |
| CN102683540A (en) * | 2012-06-06 | 2012-09-19 | 安徽三安光电有限公司 | Gallium-nitride-based light-emitting diode and manufacturing method thereof |
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