CN103094423A - P-type heterojuction solar battery and manufacturing method thereof - Google Patents
P-type heterojuction solar battery and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a P-type heterojuction solar battery and a manufacturing method thereof. The method comprises the steps of a, providing a P-type silicon slice which is prepared through a directional solidification method; b, conducting surface impurity removal cleaning to the P-type silicon slice, and surface impurities of the P-type silicon slice are removed; c, conducting velvet manufacturing and cleaning to the P-type silicon slice after the surface impurities of the P-type silicon slice are removed; and d, forming a front face structure and a back face structure on the P-type silicon slice. According to the P-type heterojuction solar battery and the manufacturing method thereof, the P-type silicon slice which is prepared through the directional solidification method is used as a substrate to prepare the P-type heterojuction solar battery, the fact that a Czochralski technique or a zone melting method is used for preparing a traditional monocrystalline silicon piece so as to prepare the P-type heterojuction solar battery is of no need, and thereby the manufacturing cost of the P-type heterojuction solar battery is lowered.
Description
Technical field
The present invention relates to the solar cell making process technical field, more particularly, relate to a kind of P type heterojunction solar battery and preparation method thereof.
Background technology
Heterojunction solar battery is different from traditional solar cell, its PN junction is not to obtain by doping the 3rd, the 5th main group active element on silicon substrate, but directly forming one deck P type or N-type silicon thin film on silicon substrate, described silicon thin film thickness is nanoscale, is generally amorphous silicon membrane.The variation of matter has occured due to the material of PN junction both sides, so said method forms solar cell and is called heterojunction solar battery.Heterojunction solar battery has high transformation efficiency, technique is simple and the good advantages of higher of light durability, is a kind of silicon solar cell that development potentiality is arranged very much.
Existing heterojunction solar battery is prepared from monocrystalline substrate.With reference to figure 1, existing P type heterojunction solar battery comprises: p type single crystal silicon substrate S 1; Be arranged on the Facad structure of described p type single crystal silicon substrate S 1 upper surface; Be arranged on the structure of described p type single crystal silicon substrate S 1 lower surface.Wherein, described Facad structure comprises: the intrinsic amorphous silicon layer L1 that is arranged on described p type single crystal silicon substrate S 1 upper surface; Be arranged on the N-type amorphous silicon layer L2 of described intrinsic amorphous silicon layer L1 upper surface; Be arranged on the transparent conductive film L3 of described N-type amorphous silicon layer L2 upper surface.Described structure comprises: the intrinsic amorphous silicon layer L4 that is arranged on described p type single crystal silicon substrate S 1 lower surface; Be arranged on the P type amorphous silicon layer L5 of described intrinsic amorphous silicon layer L4 lower surface; Be arranged on the transparent conductive film L6 of described P type amorphous silicon layer L5 lower surface.
As seen, prior art need to adopt monocrystalline silicon piece to prepare P type heterojunction solar battery as substrate.But traditional monocrystalline silicon piece is generally to adopt Czochralski method or zone-melting process preparation, and cost is higher, thereby causes the cost of manufacture of P type heterojunction solar battery higher.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of P type heterojunction solar battery, it is that substrate is made P type heterojunction solar battery that described method adopts the P type silicon chip of directional solidification method preparation, has reduced the cost of manufacture of P type heterojunction solar battery.
For achieving the above object, the invention provides following technical scheme:
A kind of manufacture method of P type heterojunction solar battery, the method comprises:
A, the P type silicon chip that provides a directed freezing method to prepare;
B, described P type silicon chip is carried out surperficial removal of impurities clean, remove its surface impurity;
P type silicon chip after c, effects on surface removal of impurities clean carry out making herbs into wool and cleaning;
D, form Facad structure and structure on described P type silicon chip;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface; Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
Preferably, in said method, also comprise between b and c:
P type silicon chip after the effects on surface removal of impurities is cleaned carries out gettering, removes its inner impurity.
Preferably, in said method, describedly described P type silicon chip is carried out surperficial removal of impurities clean and comprise:
Described P type silicon chip is cleaned for the first time, described P type silicon chip is put into the first cleaning reagent clean, in described the first cleaning agent, the volume ratio of ammoniacal liquor, hydrogen peroxide and water is 1:(1 ~ 2): (5 ~ 7);
Described P type silicon chip is cleaned for the second time, described P type silicon chip is put into KOH solution clean, the concentration of described KOH solution is 1% ~ 40%;
Described P type silicon chip is cleaned for the third time, described P type silicon chip is put into HF solution clean, the concentration of described HF solution is 1% ~ 15%;
Carrying out drying after described P type silicon chip is washed processes.
Preferably, in said method, the P type silicon chip after described effects on surface removal of impurities is cleaned carries out gettering for described P type silicon chip is carried out the phosphorus gettering.
Preferably, in said method, describedly described P type silicon chip carried out the phosphorus gettering comprise:
Described P type silicon chip is put into diffusion furnace carry out the phosphorus gettering, diffusion reagent is phosphorus oxychloride.
Preferably, in said method, described P type silicon chip after gettering is carried out making herbs into wool and cleaning comprises:
Described P type silicon chip is put into alkaline solution carry out making herbs into wool;
After making herbs into wool, described P type silicon chip is put into the second cleaning reagent clean, in described the second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1 ~ 2): (6 ~ 8);
Again described P type silicon chip is put into HF solution and clean, the concentration of described HF solution is 1% ~ 15%;
Carrying out drying after described P type silicon chip is washed processes.
Preferably, in said method, describedly form Facad structure and structure comprises on described P type silicon chip:
Form the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on described P type silicon chip, described the first intrinsic amorphous silicon is positioned at the upper surface of described P type silicon chip, and described the second intrinsic amorphous silicon layer is positioned at the lower surface of described P type silicon chip;
Form the N-type amorphous silicon layer at described the first intrinsic amorphous silicon layer upper surface;
Form P type amorphous silicon layer at described the second intrinsic amorphous silicon layer lower surface;
Form the first transparent conductive film and the second transparent conductive film, described the first transparent conductive film is positioned at described N-type amorphous silicon layer upper surface, and described the second transparent conductive film is positioned at described P type amorphous silicon layer lower surface;
Wherein, described the first intrinsic amorphous silicon layer, N-type amorphous silicon layer and the first transparent conductive film consist of described Facad structure; Described the second intrinsic amorphous silicon layer, P type amorphous silicon layer and the second transparent conductive film consist of described structure.
Preferably, in said method, also comprise:
At described the first transparent conductive film surface formation front gate line, at described the second formation back side, transparent conductive film surface grid line;
Make described front gate line and described the first transparent conductive film form ohmic contact by sintering, make described back side grid line and described the second transparent conductive film form ohmic contact.
The present invention also provides a kind of P type heterojunction solar battery, and this P type heterojunction solar battery comprises:
The P type silicon chip of directional solidification method preparation;
Be positioned at the Facad structure of described P type silicon chip upper surface;
Be positioned at the structure of described P type silicon chip lower surface;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface; Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
Preferably, in above-mentioned P type heterojunction solar battery, also comprise:
Be positioned at the front gate line of described the first transparent conductive film upper surface;
Be positioned at the back side grid line of described the second transparent conductive film lower surface;
Wherein, described front gate line and described the first transparent conductive film ohmic contact, described back side grid line and described the second transparent conductive film ohmic contact.
Can find out from technique scheme, it is that substrate prepares P type heterojunction solar battery that the method for the invention adopts the P type silicon chip of directional solidification method preparation, the monocrystalline silicon piece that need not to adopt traditional Czochralski method or zone-melting process to prepare can prepare P type heterojunction solar battery, thereby has reduced the cost of manufacture of P type heterojunction solar battery.
Description of drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or description of the Prior Art, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of a kind of P type heterojunction solar battery common in prior art;
The manufacture method schematic flow sheet of a kind of P type heterojunction solar battery that Fig. 2 provides for the embodiment of the present invention one;
The structural representation of a kind of P type heterojunction solar battery that Fig. 3 provides for the embodiment of the present invention two;
Fig. 4 is the vertical view of p type single crystal silicon sheet;
Fig. 5 is the vertical view of the P type silicon chip of directional solidification method preparation.
Embodiment
Just as described in the background section, prior art need to adopt monocrystalline silicon piece to prepare P type heterojunction solar battery as substrate.But traditional monocrystalline silicon piece is generally to adopt Czochralski method or zone-melting process preparation, and cost is higher, thereby causes the cost of manufacture of P type heterojunction solar battery higher.
The inventor studies discovery, and can adopt the P type silicon chip of directional solidification method preparation is that substrate prepares P type heterojunction solar battery.The P type silicon chip of directional solidification method preparation has the structure close with the p type single crystal silicon sheet, so can form high-quality intrinsic amorphous silicon layer on its surface, forms the interface with fabricating low-defect-density, guarantees its surface passivation effect.And with respect to monocrystalline silicon piece, adopt the N-type silicon chip of directional solidification method preparation to have lower production cost, thereby can reduce the production cost of P type heterojunction solar battery.
Based on above-mentioned research, the invention provides a kind of manufacture method of P type heterojunction solar battery, the method comprises:
A, the P type silicon chip that provides a directed freezing method to prepare;
B, described P type silicon chip is carried out surperficial removal of impurities clean, remove its surface impurity;
P type silicon chip after c, effects on surface removal of impurities clean carry out making herbs into wool and cleaning;
D, form Facad structure and structure on described P type silicon chip;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface; Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
It is that substrate prepares P type heterojunction solar battery that the method for the invention adopts the P type silicon chip of directional solidification method preparation, the monocrystalline silicon piece that need not to adopt traditional Czochralski method or zone-melting process to prepare can prepare P type heterojunction solar battery, thereby has reduced the cost of manufacture of P type heterojunction solar battery.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile of indication device structure can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that should comprise in addition, length, width and height in actual fabrication.
Embodiment one
Based on above-mentioned thought, the present embodiment provides a kind of manufacture method of P type heterojunction solar battery, and with reference to figure 2, the method comprises:
Step S11: the P type silicon chip that a directed freezing method preparation is provided.
Described directional solidification method refers to set up the temperature gradient of specific direction in investment casting shell, a kind of casting technique that the liquid of melting is solidified along the opposite direction crystalline orientation as requested of hot-fluid.The method technique is simple, and cost is lower.Polycrystalline silicon ingot casting is exactly a kind of application example of common directional solidification method.
The described P type of the present embodiment silicon chip can be prepared from the polycrystalline silicon ingot casting basis.When long crystalline substance, lay seed of single crystal silicon in the silica crucible of polycrystalline ingot furnace bottom, and seed crystal partial melting during by sectional temperature-controlled assurance silicon material fusing, induce crystal to grow with the residue seed crystal, form P type silicon ingot, described silicon ingot is cut obtain described P type silicon chip.The P type silicon chip of said method preparation, with respect to traditional monocrystalline silicon piece, cost of manufacture is very low.So adopting described P type silicon chip is that substrate prepares the cost of manufacture that P type heterojunction too can battery will reduce P type heterojunction solar battery greatly.
The described P type of the present embodiment silicon chip is to adopt directional solidification method to be prepared from.Be that described P type silicon chip is the P type quasi-monocrystalline silicon for preparing on the basis of polysilicon ingot casting equipment, its surface texture is close with the p type single crystal silicon sheet, so can form high-quality amorphous silicon layer on its surface.And in process conditions situation about reaching, also can prepare the p type single crystal silicon sheet by directional solidification method.
Step S12: described P type silicon chip is carried out surperficial removal of impurities clean, remove its surface impurity.
At first, described P type silicon chip is cleaned for the first time.Described P type silicon chip is put into the first cleaning reagent clean, scavenging period is 2min-20min.Described the first cleaning agent is the mixed solution of ammoniacal liquor and hydrogen peroxide.In described the first cleaning reagent, the volume ratio of ammoniacal liquor, hydrogen peroxide and water is 1:(1 ~ 2): (5 ~ 7).
Then, described P type silicon chip is cleaned for the second time.Described P type silicon chip is put into KOH solution clean, the concentration of described KOH solution is 1% ~ 40%, and scavenging period is 1min-100min.
Described P type silicon chip is being cleaned for the third time.Described P type silicon chip is put into HF solution clean, the concentration of described HF solution is 1% ~ 15%, and scavenging period is 10s-30min.
Can effectively remove the damage layer of described P type silicon chip surface and be attached to its surperficial impurity by above-mentioned cleaning.
At last, carrying out drying after described P type silicon chip is washed processes.Remove the chemical reagent of silicon chip surface by washing.Described P type silicon chip after washing is put into baking oven carry out drying, in order to carry out subsequent handling.
Step S13: the P type silicon chip after cleaning is carried out gettering, remove its inner impurity.
Described P type silicon chip is to adopt directional solidification method to prepare with polysilicon ingot casting equipment, and generally, what directional solidification method prepared is quasi-monocrystalline silicon.So, with respect to monocrystalline silicon piece, in described P type silicon chip, some impurity and defective being arranged inevitably, impurity is easy in fault location segregation or precipitation.And when impurity segregation or precipitation occured, impurity began to have activity, can become the complex centre of minority carrier, reduced minority carrier lifetime.At this moment, because still there is more defective in its inside, can cause the conversion efficiency of the P type heterojunction solar battery for preparing lower.This enforcement processes to remove the inner impurity of described P type silicon chip by gettering, to guarantee the conversion efficiency of P type heterojunction solar battery.
Can carry out the phosphorus gettering to remove its inner impurity to described P type silicon chip.
Preferably, can adopt phosphorus oxychloride reagent as the phosphorus source, described P type silicon chip be put into diffusion furnace carry out the phosphorus gettering.
Step S14: the P type silicon chip after gettering carried out making herbs into wool and cleaning.
P type silicon chip through above-mentioned processing is carried out making herbs into wool, and the surface forms matte thereon, reduces reflection, to improve it to the utilance of light.Preferably, the upper surface of described P type silicon chip can be put into alkaline solution and carry out making herbs into wool, the making herbs into wool time is 8min ~ 50min.
After making herbs into wool, described P type silicon chip is put into the second cleaning reagent clean.Described the second cleaning reagent is the mixed solution of hydrochloric acid and hydrogen peroxide.Wherein, in described the second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1 ~ 2): (6 ~ 8), scavenging period are 1min-100min.。
Then, more described P type silicon chip is put into 1% ~ 15%HF solution clean, the concentration of described HF solution is 1% ~ 15%, and scavenging period is 10s-100min.
At last, carrying out drying after described P type silicon chip is washed processes.Remove the residual chemical reagent of silicon chip surface by washing, more described P type silicon chip is put into baking oven carry out the drying processing, in order to carry out subsequent handling.
Step S15: form Facad structure and structure on described P type silicon chip.
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface.Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
Can at first form the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on described P type silicon chip.Wherein, described the first intrinsic amorphous silicon is positioned at the upper surface of described P type silicon chip, and described the second intrinsic amorphous silicon layer is positioned at the lower surface of described P type silicon chip.
Then, form the N-type amorphous silicon layer at described the first intrinsic amorphous silicon layer upper surface.Form P type amorphous silicon layer at described the second intrinsic amorphous silicon layer lower surface again.The doped chemical of General N type amorphous silicon layer is P elements, and the doped chemical of P type amorphous silicon layer is boron element.And the diffusion temperature of boron element is less than the diffusion temperature of P elements.So, at first form the N-type amorphous silicon layer, then form P type amorphous silicon layer, again be subjected to thermal diffusion with what avoid boron element.
At last, form the first transparent conductive film and the second transparent conductive film.Described the first transparent conductive film is positioned at described N-type amorphous silicon layer upper surface, and described the second transparent conductive film is positioned at described P type amorphous silicon layer lower surface.
After completing above-mentioned each processing step, form front gate line at described the first conductive film upper surface, at described the second formation back side, transparent conductive film surface grid line.Make described front gate line and described the first transparent conductive film form ohmic contact by sintering again, make described back side grid line and described the second transparent conductive film form ohmic contact.The final P type heterojunction solar battery that forms.
Wherein, can adopt PECVD equipment to form each amorphous silicon layer and each transparent conductive film of described Facad structure and structure.Described each amorphous silicon layer is the amorphous silicon layer that contains protium.Protium can increase the passivation effect of each amorphous silicon layer, increases the life-span of minority carrier, improves the conversion efficiency of battery.Described each transparent conductive film is TCO(transparent conductive oxide, transparent conductive oxides) film.
Need to prove, the span of each data described in the embodiment of the present application includes endpoint value.
It is that substrate prepares P type heterojunction solar battery that the described technical scheme of the present embodiment adopts the P type silicon chip of directional solidification method preparation, be that the present embodiment technical scheme provides a kind of employing P type quasi-monocrystalline silicon (P type class monocrystalline silicon piece) to prepare the method for P type heterojunction solar battery, need not to adopt monocrystalline silicon piece can prepare P type heterojunction solar battery, thereby reduced the cost of manufacture of P type heterojunction solar battery.
Embodiment two
Based on above-described embodiment, the present embodiment provides a kind of P type heterojunction solar battery, and with reference to figure 3, this P type heterojunction solar battery comprises:
The P type silicon chip S2 of directional solidification method preparation, described P type silicon chip S2 is as the substrate of P type heterojunction solar battery;
Be positioned at the Facad structure of described P type silicon chip upper surface;
Be positioned at the structure of described P type silicon chip lower surface;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer L1 that is positioned at described P type silicon chip S2 upper surface; Be positioned at the N-type amorphous silicon layer L2 of described the first intrinsic amorphous silicon layer L1 upper surface; Be positioned at the first transparent conductive film L3 of described N-type amorphous silicon layer L2 upper surface.Described structure comprises: the second intrinsic amorphous silicon layer L4 that is positioned at described P type silicon chip S2 lower surface; Be positioned at the P type amorphous silicon layer L5 of described the second intrinsic amorphous silicon layer L4 lower surface; Be positioned at the second transparent conductive film L6 of described P type amorphous silicon layer L5 lower surface.
Described each amorphous silicon layer is the amorphous silicon layer that contains protium.Protium can increase the passivation effect of each amorphous silicon layer, increases the life-span of minority carrier, improves the conversion efficiency of battery.Described each transparent conductive film is TCO(transparent conductive oxide, transparent conductive oxides) film.
Described P type heterojunction solar battery also comprises: be positioned at described the first transparent conductive film surface formation front gate line, be positioned at described the second formation back side, transparent conductive film surface grid line.Described front gate line and described the first transparent conductive film ohmic contact, described back side grid line and described the second transparent conductive film ohmic contact.
With reference to figure 4, traditional p type single crystal silicon sheet is generally the monocrystalline silicon piece of czochralski method or zone-melting process preparation, and it is shaped as round rectangle.With reference to figure 5, the P type silicon chip of directional solidification method preparation is to be prepared from the basis of polysilicon preparation, and its shape is rectangle.So the P type heterojunction solar battery of preparation same size specification adopts the P type silicon chip of directional solidification method preparation to have larger light-receiving area than p type single crystal silicon sheet, is conducive to improve the transformation efficiency of solar cell.
It is substrate that the described P type of the present embodiment heterojunction solar battery adopts the P type silicon chip of directional solidification method preparation.Described P type silicon chip is low with respect to traditional monocrystalline silicon piece production cost, and then has reduced the production cost of the capable heterojunction solar battery of P.
Need to prove, each reagent of the application or the temperature of water-washing process are between 20 ℃-90 ℃, and the higher cleaning of temperature applies shorter.Can set scavenging period according to concrete cleaning temperature.And each number range of the embodiment of the present application includes endpoint value.
To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be apparent concerning those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to these embodiment shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (10)
1. the manufacture method of a P type heterojunction solar battery, is characterized in that, comprising:
A, the P type silicon chip that provides a directed freezing method to prepare;
B, described P type silicon chip is carried out surperficial removal of impurities clean, remove its surface impurity;
P type silicon chip after c, effects on surface removal of impurities clean carry out making herbs into wool and cleaning;
D, form Facad structure and structure on described P type silicon chip;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface; Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
2. method according to claim 1, is characterized in that, also comprises between b and c:
P type silicon chip after the effects on surface removal of impurities is cleaned carries out gettering, removes its inner impurity.
3. method according to claim 2, is characterized in that, describedly described P type silicon chip is carried out surperficial removal of impurities cleans and comprise:
Described P type silicon chip is cleaned for the first time, described P type silicon chip is put into the first cleaning reagent clean, in described the first cleaning agent, the volume ratio of ammoniacal liquor, hydrogen peroxide and water is 1:(1 ~ 2): (5 ~ 7);
Described P type silicon chip is cleaned for the second time, described P type silicon chip is put into KOH solution clean, the concentration of described KOH solution is 1% ~ 40%;
Described P type silicon chip is cleaned for the third time, described P type silicon chip is put into HF solution clean, the concentration of described HF solution is 1% ~ 15%;
Carrying out drying after described P type silicon chip is washed processes.
4. method according to claim 3, is characterized in that, the P type silicon chip after described effects on surface removal of impurities is cleaned carries out gettering for described P type silicon chip is carried out the phosphorus gettering.
5. method according to claim 4, is characterized in that, describedly described P type silicon chip is carried out the phosphorus gettering comprises:
Described P type silicon chip is put into diffusion furnace carry out the phosphorus gettering, diffusion reagent is phosphorus oxychloride.
6. method according to claim 5, is characterized in that, the P type silicon chip after described effects on surface removal of impurities is cleaned carries out making herbs into wool and cleaning comprises:
Described P type silicon chip is put into alkaline solution carry out making herbs into wool;
After making herbs into wool, described P type silicon chip is put into the second cleaning reagent clean, in described the second cleaning reagent, the volume ratio of hydrochloric acid, hydrogen peroxide and water is 1:(1 ~ 2): (6 ~ 8);
Again described P type silicon chip is put into HF solution and clean, the concentration of described HF solution is 1% ~ 15%;
Carrying out drying after described P type silicon chip is washed processes.
7. method according to claim 6, is characterized in that, describedly forms Facad structure and structure comprises on described P type silicon chip:
Form the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer on described P type silicon chip, described the first intrinsic amorphous silicon is positioned at the upper surface of described P type silicon chip, and described the second intrinsic amorphous silicon layer is positioned at the lower surface of described P type silicon chip;
Form the N-type amorphous silicon layer at described the first intrinsic amorphous silicon layer upper surface;
Form P type amorphous silicon layer at described the second intrinsic amorphous silicon layer lower surface;
Form the first transparent conductive film and the second transparent conductive film, described the first transparent conductive film is positioned at described N-type amorphous silicon layer upper surface, and described the second transparent conductive film is positioned at described P type amorphous silicon layer lower surface;
Wherein, described the first intrinsic amorphous silicon layer, N-type amorphous silicon layer and the first transparent conductive film consist of described Facad structure; Described the second intrinsic amorphous silicon layer, P type amorphous silicon layer and the second transparent conductive film consist of described structure.
8. method according to claim 7, is characterized in that, also comprises:
At described the first transparent conductive film surface formation front gate line, at described the second formation back side, transparent conductive film surface grid line;
Make described front gate line and described the first transparent conductive film form ohmic contact by sintering, make described back side grid line and described the second transparent conductive film form ohmic contact.
9. a P type heterojunction solar battery, is characterized in that, comprising:
The P type silicon chip of directional solidification method preparation;
Be positioned at the Facad structure of described P type silicon chip upper surface;
Be positioned at the structure of described P type silicon chip lower surface;
Wherein, described Facad structure comprises: the first intrinsic amorphous silicon layer that is positioned at described P type silicon chip upper surface; Be positioned at the N-type amorphous silicon layer of described the first intrinsic amorphous silicon layer upper surface; Be positioned at the first transparent conductive film of described N-type amorphous silicon layer upper surface; Described structure comprises: the second intrinsic amorphous silicon layer that is positioned at described P type silicon chip lower surface; Be positioned at the P type amorphous silicon layer of described the second intrinsic amorphous silicon layer lower surface; Be positioned at the second transparent conductive film of described P type amorphous silicon layer lower surface.
10. P type heterojunction solar battery according to claim 9, is characterized in that, also comprises:
Be positioned at the front gate line of described the first transparent conductive film upper surface;
Be positioned at the back side grid line of described the second transparent conductive film lower surface;
Wherein, described front gate line and described the first transparent conductive film ohmic contact, described back side grid line and described the second transparent conductive film ohmic contact.
Priority Applications (1)
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| CN104362211A (en) * | 2014-10-24 | 2015-02-18 | 新奥光伏能源有限公司 | Heterojunction solar cell and manufacturing method thereof |
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| CN103094423B (en) | 2016-06-22 |
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