CN103094125A - Integrated method of carbon nano tube heat dissipation structure and electronic device - Google Patents
Integrated method of carbon nano tube heat dissipation structure and electronic device Download PDFInfo
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- CN103094125A CN103094125A CN2013100151577A CN201310015157A CN103094125A CN 103094125 A CN103094125 A CN 103094125A CN 2013100151577 A CN2013100151577 A CN 2013100151577A CN 201310015157 A CN201310015157 A CN 201310015157A CN 103094125 A CN103094125 A CN 103094125A
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Abstract
The invention provides an integrated method of a carbon nano tube heat dissipation structure and an electronic device and belongs to the technical field of microelectronic technology. The integrated method of the carbon nano tube heat dissipation structure and the electronic device is simple and highly-effective. A carbon nano tube array is used as the heat dissipation structure, a metal infiltration layer is deposited and a soldering tin layer is manufactured at a free end of the carbon nano tube array, and the carbon nano tube is then peeled off from a growing substrate so as to form a heat dissipation structure body. The soldering tin layer of the heat dissipation structure body is contacted with the metal infiltration layer of the electronic device for heating and soldering so that integration of the carbon nano tube heat dissipation structure and the electronic device is achieved. According to the method of the carbon nano tube heat dissipation structure and the electronic device, a carbon nano heat dissipation structure body with good performance can be directly integrated on the electronic device, and the technical problems that technology is complex and efficiency is low in other integrated methods of carbon nano heat dissipation structures are solved.
Description
Technical field
The invention belongs to the microelectronic process engineering field, relate to the integrated approach of carbon nano-tube radiator structure and electronic device.
Background technology
Along with the development of microelectronic technique, the integrated level of microelectronic component is more and more higher, causes the power density of device inside also increasing.Greatly power density makes the heat radiation of device become a problem demanding prompt solution, and is therefore more and more urgent to the needs of the new construction new technology of device heat radiation.
Carbon nano-tube has very high thermal conductivity (〉 1000W/mK), be a kind of good heat sink material; Therefore have broad application prospects in the heat dissipation from microelectronic devices device.In microelectronic technique, welding is a kind of common structure method of attachment, still due to the chemical property of carbon nano-tube itself, is difficult to directly carbon nano-tube directly is connected with device.The solution that has proposed at present is adjusting process parameter in the preparation process of carbon nano-tube itself, makes carbon nano-tube free end top become opening shape structure and improves wettability between carbon nano-tube and scolding tin.Simultaneously in welding process, need and will weld with device employing Reflow Soldering method with the full wafer carbon nano-tube of growth substrate, then separating carbon nano-tube and substrate have so just increased the complexity of technique, have reduced production efficiency.
Summary of the invention
The invention provides the integrated approach of a kind of carbon nano-tube radiator structure and electronic device, the method is passed through at carbon nano pipe array free end plated metal soakage layer, then form soldering-tin layer on this soakage layer, again carbon nano pipe array is peeled off the formation heat-radiating structure from growth substrate, last directly and the metal infiltrating layer on electronic device weld, realize the integrated of carbon nano-tube radiator structure and electronic device.
The concrete technical scheme of the present invention is:
The integrated approach of a kind of carbon nano-tube radiator structure and electronic device as shown in Figure 1, comprises the following steps:
Step 1: plated metal soakage layer.
The method of employing sputter or evaporation needs respectively the metal of position deposition one deck 1～10 micron thickness of integrated heat dissipation structure on carbon nano pipe array free end and electronic device, as soakage layer.
Step 2: make soldering-tin layer.
Soldering tin bar is laid on the metal infiltrating layer top that the carbon nano pipe array free end deposits, heated under 230～300 ℃ 1～2 minute, after scolding tin melts and covers whole metal infiltrating layer, be cooled to room temperature, form soldering-tin layer.
Step 3: form heat-radiating structure.
The growth substrate of fixed carbon nano-tube array upwards applies pulling force along the surperficial soldering-tin layer of carbon nano pipe array, makes carbon nano pipe array separate with the growth substrate of himself, forms independent carbon nano-tube radiator structure.
Step 4: integrated heat radiating device.
The metal infiltrating layer that on the electronic device of the soldering-tin layer of carbon nano-tube radiator structure and step 1 gained, deposition is good is contacted, heated under 230～350 ℃ 1～2 minute, make the metal infiltrating layer strong bonded on soldering-tin layer and electronic device; Then be cooled to room temperature, realize the integrated of carbon nano-tube radiator structure and electronic device.
In such scheme, the described metal of step 1 is Ni, Cr; The described soldering tin bar of step 2 is Sn60/Pb40 leypewter bar.
The invention has the beneficial effects as follows:
The integrated approach of carbon nano-tube radiator structure provided by the invention and electronic device, adopt metal as soakage layer, can utilize between carbon nano-tube and metal, stronger adhesion between metal and scolding tin, scolding tin is connected with carbon nano pipe array securely, so that the carbon nano-tube radiator structure can directly weld with electronic device, need not the form of carbon nano-tube itself is done specific requirement.The independent carbon nano-tube radiator structure that while step 3 obtains, after can preparing the large tracts of land heat-radiating structure by large-area carbon nano pipe array, utilize the means of machine cuts to obtain the little heat-radiating structure of different sizes or shape, overcome the shortcoming that conventional method need to prepare the carbon nano pipe array consistent with device size, simplified technique, also can enhance productivity; Adopt strip scolding tin also can avoid the process complications problem of using reflow soldering process to bring by the method formation soldering-tin layer that directly adds thermal diffusion.
Description of drawings
Fig. 1 is schematic flow sheet of the present invention.
Fig. 2 is the radiator structure radiating effect test data figure that the present invention prepares.
Embodiment
The invention will be further described below in conjunction with specific embodiment, but the present invention is not limited to following examples.
The integrated approach of a kind of carbon nano-tube radiator structure and electronic device comprises the following steps:
With 8mm * 8mm with the titanium dioxide silicon chip of directional carbon nanotube array and treat that the integrated silicon chip with Au film heating silk puts into rf magnetron sputtering equipment, at Ar gas air pressure 0.5Pa, under the process conditions of power 100W, use Ni metallic target sputter 60 minutes, thus at carbon nano-tube free end top and the silicon chip back deposit thickness with Au film heating silk be about the Ni metal infiltrating layer of 5 microns.
2. will be positioned over hot platform with the titanium dioxide silicon chip of directional carbon nanotube array, row are got the long Sb60/Pb40 soldering tin bar of three 8mm, are tiled on the metal infiltrating layer of carbon nano pipe array.Setting hot platform temperature is 250 ℃, waits for approximately two minutes until hot Delta after the design temperature, and scolding tin namely melts and flows to whole metal infiltrating layer surface, stops hot platform heating this moment, and is naturally cooling.
3. after being cooled to room temperature, utilize tweezers to apply one to upper pulling force from the edge, the full wafer carbon nano pipe array can separate with growth substrate.
4. the silicon chip with Au film heating silk of plated metal soakage layer is positioned on hot platform.With carbon nano pipe array soldering-tin layer placed face down on the metal infiltrating layer of silicon chip, setting hot platform temperature is 250 ℃, waits for two minutes until hot Delta after design temperature, stops hot platform heating, naturally cooling, the carbon nano-tube heat-radiating structure can be realized integrated with silicon chip.
5. the mensuration of radiating effect
Utilize Agilent B2901A accurate source table to pass into the electric current of certain power on the film heating silk of silicon chip, utilize simultaneously the standard four-wire method to measure the resistance of this heater strip.Because the temperature coefficient of Au is known, therefore can go out by the change calculations of resistance the variation of heater strip temperature.Fig. 2 (a) is not for there is no the heater strip temperature rise figure of integrated heat dissipation structure, Fig. 2 (b) is depicted as the heater strip temperature rise figure with radiator structure, shows that thus the integrated of carbon nano-tube radiator structure and electronic device can effectively reduce the temperature rising that the heater strip energising brings.
It will be appreciated by those skilled in the art that above-described embodiment mainly illustrates validity and the exploitativeness of technical solution of the present invention, thereby verify effect of the present invention, the silicon chip that wherein has Au film heating silk is not to be further restriction to electronic device.Those skilled in the art select other metal material or film preparing technology to prepare metal infiltrating layer according to prior art and general knowledge known in this field, or select the soldering tin material of other components, can realize the integrated of radiator structure and electronic device.
Claims (3)
1. the integrated approach of a carbon nano-tube radiator structure and electronic device comprises the following steps:
Step 1: plated metal soakage layer;
The method of employing sputter or evaporation needs respectively the metal of position deposition one deck 1～10 micron thickness of integrated heat dissipation structure on carbon nano pipe array free end and electronic device, as soakage layer;
Step 2: make soldering-tin layer;
Soldering tin bar is laid on the metal infiltrating layer top that the carbon nano pipe array free end deposits, heated under 230～300 ℃ 1～2 minute, after scolding tin melts and covers whole metal infiltrating layer, be cooled to room temperature, form soldering-tin layer;
Step 3: form radiator structure;
The growth substrate of fixed carbon nano-tube array upwards applies pulling force along the surperficial soldering-tin layer of carbon nano pipe array, makes carbon nano pipe array separate with the growth substrate of himself, forms independent carbon nano-tube radiator structure;
Step 4: integrated heat radiating device;
The metal infiltrating layer that on the electronic device of the soldering-tin layer of carbon nano-tube radiator structure and step 1 gained, deposition is good is contacted, heated under 230～350 ℃ 1～2 minute, make the metal infiltrating layer strong bonded on soldering-tin layer and electronic device; Then be cooled to room temperature, realize the integrated of carbon nano-tube radiator structure and electronic device.
2. the integrated approach of carbon nano-tube radiator structure according to claim 1 and electronic device, is characterized in that, the described metal of step 1 is Ni or Cr.
3. the integrated approach of carbon nano-tube radiator structure according to claim 1 and electronic device, is characterized in that, the described soldering tin bar of step 2 is Sn60/Pb40 leypewter bar.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112239651A (en) * | 2020-09-15 | 2021-01-19 | 深圳烯湾科技有限公司 | Carbon nano tube heat conducting sheet and preparation method thereof |
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Application publication date: 20130508 |