CN103093018B - 用于提取hbt器件中基区寄生电阻的方法 - Google Patents
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CN201110346435.8A CN103093018B (zh) | 2011-11-04 | 2011-11-04 | 用于提取hbt器件中基区寄生电阻的方法 |
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CN103093018A CN103093018A (zh) | 2013-05-08 |
CN103093018B true CN103093018B (zh) | 2016-02-10 |
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Families Citing this family (3)
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CN106847791B (zh) * | 2017-01-04 | 2019-06-11 | 上海华虹宏力半导体制造有限公司 | 监控基区宽度的测试结构 |
CN108336138B (zh) * | 2017-01-19 | 2021-02-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
CN112329309B (zh) * | 2020-11-09 | 2022-11-01 | 吉林大学 | 环状熔核电阻点焊数值模拟方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1450652A (zh) * | 2002-04-10 | 2003-10-22 | 株式会社日立制作所 | 半导体器件及其制造方法和功率放大器模块 |
US6677625B2 (en) * | 1999-12-28 | 2004-01-13 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor |
EP1705710A1 (de) * | 2005-03-26 | 2006-09-27 | ATMEL Germany GmbH | Bipolartransistor und Herstellungsverfahren dieses Transistors |
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JPH02278881A (ja) * | 1989-04-20 | 1990-11-15 | Matsushita Electron Corp | ツェナーダイオードの製造方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6677625B2 (en) * | 1999-12-28 | 2004-01-13 | Matsushita Electric Industrial Co., Ltd. | Bipolar transistor |
CN1450652A (zh) * | 2002-04-10 | 2003-10-22 | 株式会社日立制作所 | 半导体器件及其制造方法和功率放大器模块 |
EP1705710A1 (de) * | 2005-03-26 | 2006-09-27 | ATMEL Germany GmbH | Bipolartransistor und Herstellungsverfahren dieses Transistors |
Non-Patent Citations (2)
Title |
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Scalable Approach for HBT"s Base Resistance Calculation;Christian Raya 等;《IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING》;20080531;第21卷(第2期);第186-194页 * |
射频Si/SiGe/Si HBT的研究;廖小平 等;《电子器件》;20030630;第26卷(第2期);第136-138页 * |
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