CN103092379A - Manufacturing method for image display system and touch sensing device - Google Patents

Manufacturing method for image display system and touch sensing device Download PDF

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Publication number
CN103092379A
CN103092379A CN2011103411882A CN201110341188A CN103092379A CN 103092379 A CN103092379 A CN 103092379A CN 2011103411882 A CN2011103411882 A CN 2011103411882A CN 201110341188 A CN201110341188 A CN 201110341188A CN 103092379 A CN103092379 A CN 103092379A
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China
Prior art keywords
layer
sensing device
touch sensing
sensing area
image display
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CN2011103411882A
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Chinese (zh)
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CN103092379B (en
Inventor
赖思维
刘又菁
何婉钰
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Innocom Technology Shenzhen Co Ltd
Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Innolux Shenzhen Co Ltd
Chi Mei Optoelectronics Corp
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Priority to CN201610218879.6A priority Critical patent/CN105867690B/en
Priority to CN201110341188.2A priority patent/CN103092379B/en
Publication of CN103092379A publication Critical patent/CN103092379A/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

Abstract

The invention discloses a manufacturing method for an image display system. The image display system comprises a touch sensing device which comprises a transparent substrate, a sensing electrode patterned layer and an inorganic dielectric material layer, the transparent substrate is provided with a sensing area and a non-sensing area adjacent to the sensing area, the sensing electrode patterned layer is positioned on the transparent substrate of the sensing area, and the inorganic dielectric material layer is provided with a first portion positioned on the transparent substrate of the non-sensing area and a second portion positioned in the sensing area and locally covering the sensing electrode patterned layer. The invention further discloses a manufacturing method for the touch sensing device.

Description

The manufacture method of image display system and touch sensing device
Technical field
The present invention relevant for a kind of contact panel technology, particularly relevant for a kind of shading/decorating film for touch sensing device, is the manufacture method about a kind of image display system and touch sensing device specifically.
Background technology
Touch sensing device (for example is integrated in a flat display apparatus usually, liquid crystal display (liquid crystal display, LCD), active matrix organic light emitting display (active matrix organic light-emitting display, AMOLED) etc. in, to form the contact panel display.The contact panel display is assemblied in electronic installation usually, for example laptop computer, personal digital assistant (personal digital assistants, PDA), e-book (electronic books), projector, and mobile phone etc.The contact panel display can be subject to attracting attention with universal by the function of the execution such as finger, pointer (stylus), stylus input gradually.
Generally speaking, touch sensing device usually around sensing area (that is, non-sensing area or fan-out (fan out) district) shielding layer (for example, black matrix" (black matrix, BM) layer) is set so that the use of shading and decoration to be provided.At present, industry is to adopt conventional black or white photoresistance as the material of above-mentioned shielding layer.Moreover, shielding layer usually with wet process (for example, screen printing (screen printing) or rotary coating (spin coating)) make, make shielding layer have enough thickness (for example, greater than 1 micron (μ m)) and good shaded effect can be provided.Yet, thick shielding layer can form section poor (step height) between fanout area and sensing area, make after subsequent deposition is used to make the transparency conducting layer of sensing electrode, rainbow line (mura) phenomenon occurs and affect display quality between fanout area and sensing area.
Therefore, be necessary to seek a kind of new shading/decorating film structure, it can improve or address the above problem.
Summary of the invention
One embodiment of the invention provides a kind of image display system, and it comprises: a touch sensing device comprises: a transparent substrates has a sensing area and in abutting connection with a non-sensing area of sensing area; One sensing electrode patterned layer is positioned on the transparent substrates of sensing area; And an Inorganic Dielectric Material layer, have the First on the transparent substrates that is positioned at non-sensing area and be positioned at sensing area and local one second one of covering the sensing electrode patterned layer.
Another embodiment of the present invention provides a kind of manufacture method of touch sensing device, comprising: a transparent substrates is provided, and it has a sensing area and in abutting connection with a non-sensing area of sensing area; Form a sensing electrode patterned layer on the transparent substrates of sensing area; And forming an Inorganic Dielectric Material layer, it has the First on the transparent substrates that is positioned at non-sensing area and is positioned at sensing area and local one second one of covering the sensing electrode patterned layer.
According to the technical scheme of the embodiment of the present invention as can be known: because sensing electrode is to make before forming shading/decorating film, it is section poor therefore can not form between sensing area and non-sensing area.That is to say, can avoid rainbow line phenomenon, and then promote display quality.Moreover, by changing the thickness of Inorganic Dielectric Material layer in shading/decorating film, can make shading/decorating film present required color.In addition, shading/decorating film can present metallic luster or strengthen reflection potential by the reflection horizon.Compared to the existing shading/decorating film that is consisted of by photoresist, can provide the more color of user to select.In addition; because Inorganic Dielectric Material layer, reflection horizon and protective seam in decorating film can be made simultaneously with the parts of the sensing area that is positioned at touch sensing device; therefore the making of shading/decorating film can be integrated into the manufacturing of touch sensing device easily, and then simplifies technique.
Description of drawings
Figure 1A, Figure 1B, Fig. 1 C to Fig. 1 D show the manufacture method diagrammatic cross-section of touch sensing device in image display system according to an embodiment of the invention;
Fig. 2 shows the structure partial floor map of the sensing area of touch sensing device in Fig. 1 D;
Fig. 3 A, Fig. 3 B to Fig. 3 C show the manufacture method diagrammatic cross-section of touch sensing device in image display system according to another embodiment of the present invention;
Fig. 4 A, Fig. 4 B, Fig. 4 C to Fig. 4 D show according to the present invention again the manufacture method diagrammatic cross-section of touch sensing device in the image display system of another embodiment; And
Fig. 5 shows image display system block schematic diagram according to another embodiment of the present invention.
Accompanying drawing number:
10~sensing area;
20~non-sensing area;
100~transparent substrates;
102~sensing electrode patterned layer;
102a~second sense electrode groups;
102b~electrical connection section;
102c~first sense electrode groups;
104~Inorganic Dielectric Material layer;
104a~First;
104b~second one;
105a~non-conductive reflection horizon;
105b~metal level;
105c, 106b, 110b~conductor layer;
106a~reflection horizon;
107~the first metal layer;
108~separation layer;
110a~second metal level;
120~protective seam;
200~touch sensing device;
300~contact panel display;
400~input block;
500~electronic installation;
X~first is axial; And
Y~second is axial.
Embodiment
The image display system of the embodiment of the present invention below is described.Yet, can understand easily embodiment provided by the present invention and only be used for explanation with the ad hoc approach making and use the present invention, be not to limit to scope of the present invention.
The image display system of different embodiments of the invention below is provided.Please refer to Fig. 1 D and Fig. 2, wherein Fig. 1 D shows the diagrammatic cross-section of touch sensing device 200 in image display system according to an embodiment of the invention, and Fig. 2 shows the structure partial floor map of the sensing area of touch sensing device 200 in Fig. 1 D.In the present embodiment, touch sensing device 200 comprises: a transparent substrates 100, a sensing electrode patterned layer 102, an inorganic dielectric layer 104, a reflection horizon 106a, a conductor layer 106b and a protective seam 120.In one embodiment, transparent substrates 100 is made of glass, in order to as sensing glass and upper cover glass.In other embodiments, transparent substrates 100 also can be made of quartzy or other elasticity or non-resilient macromolecule transparent material.In the present embodiment, transparent substrates 100 has a sensing area 10 and a non-sensing area 20.Usually sensing area 10 is positioned at the center of transparent substrates 100, but not sensing area 20 is adjacent to sensing area 10.In the present embodiment, non-sensing area 20 is positioned at the peripheral region of transparent substrates 100 and around sensing area 10.
Sensing electrode patterned layer 102 is positioned on the transparent substrates 100 of sensing area 10.Sensing electrode patterned layer 102 can be by the transparent conductive patterns layer (for example, indium tin oxide (indium tin oxide, ITO) or indium-zinc oxide (indium zinc oxide, IZO) layer) consist of, and generally include two sense electrode groups that are arranged in array.In one embodiment, sensing electrode patterned layer 102 comprise one first sense electrode groups and with its space on insulation (spatially insulated) and one second sense electrode groups that is crisscross arranged.In order to simplify accompanying drawing, only show a pair of the first sensing electrode 102c and reach a pair of the second sensing electrode 102a that is crisscross arranged with it, as shown in Figure 2 herein.In the first sense electrode groups, each first sensing electrode 102c is electrically connected to each other on one first axial X via an electrical connection section 102b.
Inorganic Dielectric Material layer 104 is positioned on transparent substrates 100, and corresponding to sensing area 10 and non-sensing area 20.For instance, Inorganic Dielectric Material layer 104 has the First 104a on the transparent substrates 100 that is positioned at non-sensing area 20, in order to the first as shading/decorating film.Moreover Inorganic Dielectric Material layer 104 has one second 104b that is positioned at sensing area 10 and local covering sensing electrode patterned layer 102.For instance, second 104b of Inorganic Dielectric Material layer 104 covers the electrical connection section 102b of sensing electrode patterned layer 102 on one second axial Y, as shown in Figure 2.
The thickness of Inorganic Dielectric Material layer can be less than 0.3 micron (μ m).Moreover in one embodiment, Inorganic Dielectric Material layer 104 can be an individual layer and can comprise one silica layer, a silicon nitride layer or other transparent inorganic polymer layers).In addition, Inorganic Dielectric Material layer 104 also can be sandwich construction (for example, stacking silicon oxide layer, silicon nitride layer or other transparent inorganic polymer layer or its combination).In the present embodiment, can change the thickness of the First 104a (that is, shading/decorating film) of Inorganic Dielectric Material layer 104, make it present different colors because of the light principle of interference.
Reflection horizon 106a is arranged at transparent substrates 100 tops of non-sensing area 20, covering the First 104a of Inorganic Dielectric Material layer 104, and as a second portion of decorating film.Moreover reflection horizon 106a can further extend to sensing electrode patterned layer 102, with cabling and the connection pad as electrical connection sensing electrode patterned layer 102.In one embodiment, reflection horizon 106a (for example can be a single-layer metal layer, aluminium, chromium, tin, zirconium or its alloy or its combination) or be sandwich construction (for example, stacking aluminium, chromium, tin, zirconium or its alloy or its combination), make decorating film can further present metallic luster.
Conductor layer 106b is arranged on second 104b of Inorganic Dielectric Material layer 104.As Fig. 1 D and shown in Figure 2, in the second sense electrode groups, each second sensing electrode 102a is electrically connected to each other on the second axial Y via conductor layer 106b.Conductor layer 106b can be a single-layer metal layer (for example, aluminium, chromium, tin, zirconium or its alloy or its combination) or is sandwich construction (for example, stacking aluminium, chromium, tin, zirconium or its alloy or its combination).In one embodiment, reflection horizon 106a and conductor layer 106b are made of same metal level.
Protective seam 120 is arranged on the transparent substrates 100 of sensing area 10 and non-sensing area 20, and covers reflection horizon 106a, sensing electrode patterned layer 102 and conductor layer 106b.In one embodiment; protective seam 120 can comprise Inorganic Dielectric Material and be an individual layer (for example; one silica layer, a silicon nitride layer or a silicon oxynitride layer) or be sandwich construction (for example, stacking silicon oxide layer, silicon nitride layer or silicon oxynitride layer or its combination).In other embodiments, protective seam 120 also can comprise organic photoresist.
Please refer to Fig. 3 C, the diagrammatic cross-section that it shows touch sensing device 200 in image display system according to another embodiment of the present invention wherein is same as the parts in Fig. 1 D, uses identical label and the description thereof will be omitted.The embodiment that is different from Fig. 1 D, the touch sensing device 200 of the present embodiment comprise a non-conductive reflection horizon 105a and a metal level 105b.Non-conductive reflection horizon 105a can be the dielectric layer with high reflectance, for example: printing ink (for example, silver color or white ink), discontinuous phase metal (discontinuous phase of metal) or photoresistance (for example, silver color or white photoresistance).Moreover metal level 105b is arranged on non-conductive reflection horizon 105a, and extends to sensing electrode patterned layer 102, with cabling and the connection pad as electrical connection sensing electrode patterned layer 102.In one embodiment, metal level 105b and conductor layer 105c are made of the same material layer, and (for example can be a single-layer metal layer, aluminium, chromium, tin, zirconium or its alloy or its combination) or be sandwich construction (for example, stacking aluminium, chromium, tin, zirconium or its alloy or its combination).As shown in the conductor layer 106b of Fig. 2, conductor layer 105c can make equally that in the second sense electrode groups, each second sensing electrode 102a is electrically connected to each other on the second axial Y.
Please refer to Fig. 4 D, the diagrammatic cross-section that it shows according to the present invention again touch sensing device 200 in the image display system of another embodiment wherein is same as the parts in Fig. 1 D or Fig. 3 C, uses identical label and the description thereof will be omitted.The embodiment of similar diagram 1D, the touch sensing device 200 of the present embodiment comprises: a transparent substrates 100, a sensing electrode patterned layer 102, an inorganic dielectric layer 104 and a protective seam 120.Moreover the touch sensing device 200 of the present embodiment further comprises: a first metal layer 107, one second metal level 110a, a separation layer 108 and a conductor layer 110b.The first metal layer 107 is arranged at transparent substrates 100 tops of non-sensing area 20, and with the First 104a of covering Inorganic Dielectric Material layer 104 and as the reflection horizon, its material can be same as the reflection horizon 106a in Fig. 1 D.In one embodiment, the first metal layer 107 can be discontinuous phase metal (the discontinuous phase of metal) layer of non-conductive single or multiple lift structure, and it comprises: aluminium, chromium, tin, zirconium or its alloy or its combination.
The second metal level 110a is arranged at the first metal layer 107 tops, and extends to sensing electrode patterned layer 102, and with as the cabling and the connection pad that are electrically connected to sensing electrode patterned layer 102, its material can be same as the metal level 105b in Fig. 3 C.
Separation layer 108 be located in the first metal layer 107 and the second metal level 110a between and extend to the sidewall of the first metal layer 107 and below inorganic dielectric layer 104 thereof, make the first metal layer 107 and the second metal level 110a electrical isolation.In one embodiment, the material of separation layer 108 can be same as inorganic dielectric layer 104 or protective seam 120.
Conductor layer 110b is arranged on second 104b of Inorganic Dielectric Material layer 104, makes protective seam 120 cover the second metal level 110a, sensing electrode patterned layer 102 and conductor layer 110b.In addition, as shown in the conductor layer 106b of Fig. 2, conductor layer 110b can make equally that in the second sense electrode groups, each second sensing electrode 102a is electrically connected to each other on the second axial Y.In one embodiment, conductor layer 110b and the second metal level 110a with consisted of by the same material layer.
Figure 1A, Figure 1B, Fig. 1 C to Fig. 1 D show the manufacture method diagrammatic cross-section of touch sensing device according to an embodiment of the invention.Please refer to Figure 1A, a transparent substrates 100 is provided, it has a sensing area 10 and in abutting connection with a non-sensing area 20 of sensing area 10.Then, in the upper formation one sensing electrode patterned layer 102 of the transparent substrates 100 of sensing area 10, be for example ITO or IZO patterned layer.Sensing electrode patterned layer 102 comprise one first sense electrode groups, with the first sense electrode groups space on insulation and one second sense electrode groups and the electrical connection section 102b that are crisscross arranged.Herein in order to simplify accompanying drawing, only show a pair of the first sensing electrode 102c (as shown in Figure 2) and with its space on insulation and a pair of the second sensing electrode 102a (as Figure 1A and shown in Figure 2) of being crisscross arranged.In the first sense electrode groups, each first sensing electrode 102c is via electrical connection section 102b be electrically connected to each other on one first axial X (as shown in Figure 2).
Please refer to Figure 1B, can utilize existing deposition technique, for example chemical vapor deposition (chemical vapor deposition, CVD) forms an Inorganic Dielectric Material layer 104 on transparent substrates 100.Afterwards, come patterning Inorganic Dielectric Material layer 104 by existing photoetching and etching technics, make it have the First 104a on the transparent substrates 100 that is positioned at non-sensing area 20 and be positioned at sensing area 10 and local one second 104b that covers sensing electrode patterned layer 102.First 104a is in order to the first as shading/decorating film, and second 104b covers the electrical connection section 102b of sensing electrode patterned layer 102 on one second axial Y, as shown in Figure 2.
Please refer to Fig. 1 C, (for example, CVD) form a conductive layer (not illustrating) on transparent substrates 100, to cover Inorganic Dielectric Material layer 104 and the sensing electrode patterned layer 102 in Figure 1B by existing depositing operation.Afterwards, come patterned conductive layer by existing photoetching and etching technics, cover the First 104a of Inorganic Dielectric Material layer 104 to form a reflection horizon 106a above the transparent substrates 100 of non-sensing area 20, and form a conductor layer 106b on second 104b of the Inorganic Dielectric Material layer 104 of sensing area 10.Reflection horizon 106a extends to sensing electrode patterned layer 102, with cabling and the connection pad as electrical connection sensing electrode patterned layer 102.Moreover conductor layer 106b also extends to sensing electrode patterned layer 102, makes it be electrically connected to the second adjacent sensing electrode 102a in the second sense electrode groups on the second axial Y, as shown in Figure 2.
Please refer to Fig. 1 D, (for example, CVD) form a protective seam 120 on the structure of Fig. 1 C, to cover reflection horizon 106a, sensing electrode patterned layer 102 and conductor layer 106b by existing depositing operation.
Fig. 3 A, Fig. 3 B to Fig. 3 C show the manufacture method diagrammatic cross-section of touch sensing device according to another embodiment of the present invention, wherein are same as the parts in Figure 1A, Figure 1B, Fig. 1 C to Fig. 1 D, use identical label and the description thereof will be omitted.Please refer to Fig. 3 A, a transparent substrates 100 is provided, have a sensing electrode patterned layer 102 and an Inorganic Dielectric Material layer 104 on it, and be same as the structure of Figure 1B.Then, form a non-conductive reflection horizon 105a on the First 104a of Inorganic Dielectric Material layer 104, it is the dielectric layer with high reflectance, and for example: printing ink (for example, silver color or white ink), discontinuous phase metal or photoresistance (for example, silver color or white photoresistance).
Please refer to Fig. 3 B, sequentially (for example, CVD), photoetching and etching technics, form a metal level 105b on the non-conductive reflection horizon 105a of non-sensing area 20, to strengthen reflection potential by existing depositing operation.Simultaneously, form a conductor layer 105c and extend to sensing electrode patterned layer 102 via the sidewall of second 104b of Inorganic Dielectric Material layer 104 on second 104b of the Inorganic Dielectric Material layer 104 of sensing area 10.Metal level 105b can be further extends to sensing electrode patterned layer 102 via the sidewall of the First 104a of the Inorganic Dielectric Material layer 104 of non-conductive reflection horizon 105a and below thereof.
Please refer to Fig. 3 C, (for example, CVD) form a protective seam 120 on the structure of Fig. 3 B, with covering metal layer 105b, sensing electrode patterned layer 102 and conductor layer 105c by existing depositing operation.
Fig. 4 A, Fig. 4 B, Fig. 4 C to Fig. 4 D show according to the present invention again the manufacture method diagrammatic cross-section of the touch sensing device of another embodiment, wherein are same as the parts in Figure 1A, Figure 1B, Fig. 1 C to Fig. 1 D, use identical label and the description thereof will be omitted.Please refer to Fig. 4 A, a transparent substrates 100 is provided, have a sensing electrode patterned layer 102 and an Inorganic Dielectric Material layer 104 on it, and be same as the structure of Figure 1B.Then, sequentially (for example, CVD), photoetching and etching technics, form a first metal layer 107 above the transparent substrates 100 of non-sensing area 20, with the First 104a that covers Inorganic Dielectric Material layer 104 and as a reflection horizon by existing deposition technique.In other embodiments, can electroplate (non-conductive vacuum metallization, NCVM) technique by the metal non-conducting vacuum, form a non-conductive discontinuous phase metal level at non-sensing area 20, to replace the first metal layer 107.
Please refer to Fig. 4 B, sequentially (for example, CVD) and photoetching and etching technics, form a separation layer 108 on the first metal layer 107 of non-sensing area 20 by existing depositing operation.Separation layer 108 can be via the sidewall of the First 104a of the Inorganic Dielectric Material layer 104 of the first metal layer 107 and below thereof and is extended to sensing electrode patterned layer 102.
Please refer to Fig. 4 C, sequentially (for example, CVD), photoetching and etching technics, form one second metal level 110a on separation layer 108 by existing depositing operation.Simultaneously, form a conductor layer 110b and extend to sensing electrode patterned layer 102 via the sidewall of second 104b of Inorganic Dielectric Material layer 104 on second 104b of the Inorganic Dielectric Material layer 104 of sensing area 10.Metal level 105b can be further extends to sensing electrode patterned layer 102 via the sidewall of separation layer 108.In this case, the second metal level 110a by separation layer 108 and with the first metal layer 107 electrical isolation.
Please refer to Fig. 4 D, (for example, CVD) form a protective seam 120 on the structure of Fig. 4 C, to cover the second metal level 110a, sensing electrode patterned layer 102 and conductor layer 110b by existing depositing operation.
According to above-described embodiment, because sensing electrode is to make, therefore can not form section poor between sensing area and non-sensing area before forming shading/decorating film.That is to say, can avoid rainbow line phenomenon, and then promote display quality.Moreover, by changing the thickness of Inorganic Dielectric Material layer in shading/decorating film, can make shading/decorating film present required color.In addition, shading/decorating film can present metallic luster or strengthen reflection potential by the reflection horizon.Compared to the existing shading/decorating film that is consisted of by photoresist, can provide the more color of user to select.In addition; because Inorganic Dielectric Material layer, reflection horizon and protective seam in decorating film can be made simultaneously with the parts of the sensing area that is positioned at touch sensing device; therefore the making of shading/decorating film can be integrated into the manufacturing of touch sensing device easily, and then simplifies technique.
Fig. 5 shows image display system block schematic diagram according to another embodiment of the present invention, it may be implemented in contact panel display 300 or electronic installation 500, for example: panel computer (tablet personal computer), projector, e-book, notebook computer, mobile phone, digital camera, personal digital assistant (PDA), desktop computer, televisor, vehicle display or Portable DVD player.Can be arranged at contact panel display 300 according to the touch sensing device 200 of the present embodiment.In other embodiments, touch sensing device 200 can be arranged at electronic installation 500.As shown in Figure 5, electronic installation 500 comprises: contact panel display 300 and input block 400.Input block 400 is coupled to contact panel display 300, in order to provide input signal (for example, signal of video signal) to contact panel display 300, makes contact panel display 300 show images.
Although the present invention discloses as above with preferred embodiment; so it is not to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can do to change and retouching, so protection scope of the present invention is when being as the criterion with claim institute confining spectrum.

Claims (23)

1. an image display system, is characterized in that, described image display system comprises:
One touch sensing device comprises:
One transparent substrates has a sensing area and in abutting connection with a non-sensing area of described sensing area;
One sensing electrode patterned layer is positioned on the described transparent substrates of described sensing area; And
One Inorganic Dielectric Material layer has the First on the described transparent substrates that is positioned at described non-sensing area and is positioned at described sensing area and local one second one of covering described sensing electrode patterned layer.
2. image display system as claimed in claim 1, is characterized in that, described sensing electrode patterned layer comprises:
One first sense electrode groups and with its space on insulation and one second sense electrode groups that is crisscross arranged; And
One electrical connection section is electrically connected to described the first sense electrode groups one first on axially;
Described second one of wherein said Inorganic Dielectric Material layer covers described electrical connection section one second on axially.
3. image display system as claimed in claim 2, is characterized in that, described touch sensing device more comprises:
One conductor layer is arranged on described second one of described Inorganic Dielectric Material layer, and is electrically connected to described the second sense electrode groups described second on axially; And
One reflection horizon is arranged at the described transparent substrates top of described non-sensing area, and covers the described First of described Inorganic Dielectric Material layer.
4. image display system as claimed in claim 3, is characterized in that, described reflection horizon extends to described sensing electrode patterned layer, and be made of the same material layer with described conductor layer.
5. image display system as claimed in claim 3, is characterized in that, described reflection horizon is a non-conductive reflection horizon.
6. image display system as claimed in claim 5, is characterized in that, the material in described non-conductive reflection horizon be selected from printing ink, photoresistance and discontinuous phase metal level one of them.
7. image display system as claimed in claim 3, is characterized in that, described touch sensing device more comprises:
One metal level is arranged at above the described transparent substrates of described non-sensing area, to cover described reflection horizon.
8. image display system as claimed in claim 7, is characterized in that, described metal level extends to described sensing electrode patterned layer, and be made of the same material layer with described conductor layer.
9. image display system as claimed in claim 8, is characterized in that, described touch sensing device comprises that more a protective seam covers described metal level, described sensing electrode patterned layer and described conductor layer.
10. image display system as claimed in claim 2, is characterized in that, described touch sensing device more comprises:
One the first metal layer is arranged at above the described transparent substrates of described non-sensing area, to cover the described First of described Inorganic Dielectric Material layer;
One second metal level is arranged at above described the first metal layer, and extends to described sensing electrode patterned layer;
One separation layer is located between described the first metal layer and described the second metal level, makes described the first metal layer and described the second metal level electrical isolation; And
One conductor layer is arranged on described second one of described Inorganic Dielectric Material layer, and is electrically connected to described the second sense electrode groups one second on axially, and wherein said the second metal level and described conductor layer are made of the same material layer.
11. image display system as claimed in claim 10 is characterized in that, described touch sensing device more comprises a protective seam, covers described the second metal level, described sensing electrode patterned layer and described conductor layer.
12. image display system as claimed in claim 1 is characterized in that, more comprises a contact panel display, wherein said contact panel display comprises described touch sensing device.
13. image display system as claimed in claim 12, it is characterized in that, comprise that more one has the electronic installation of described contact panel display, described electronic installation comprises: a panel computer, a projector, an e-book, a notebook computer, a mobile phone, a digital camera, a personal digital assistant, a desktop computer, a televisor, a vehicle display or a Portable DVD player.
14. the manufacture method of a touch sensing device is characterized in that, the manufacture method of described touch sensing device comprises:
One transparent substrates is provided, and it has a non-sensing area of a sensing area and the described sensing area of adjacency;
Form a sensing electrode patterned layer on the described transparent substrates of described sensing area; And
Form an Inorganic Dielectric Material layer, it has the First on the described transparent substrates that is positioned at described non-sensing area and is positioned at described sensing area and local one second one of covering described sensing electrode patterned layer.
15. the manufacture method of touch sensing device as claimed in claim 14 is characterized in that, described sensing electrode patterned layer comprises:
One first sense electrode groups and with its space on insulation and one second sense electrode groups that is crisscross arranged; And
One electrical connection section is electrically connected to described the first sense electrode groups one first on axially;
Described second one of wherein said Inorganic Dielectric Material layer covers described electrical connection section one second on axially.
16. the manufacture method of touch sensing device as claimed in claim 15 is characterized in that, the manufacture method of described touch sensing device more comprises:
Form a conductor layer on described second one of described Inorganic Dielectric Material layer, make described conductor layer be electrically connected to described the second sense electrode groups described second on axially; And
Form a reflection horizon in the described transparent substrates top of described non-sensing area, to cover the described First of described Inorganic Dielectric Material layer.
17. the manufacture method of touch sensing device as claimed in claim 16 is characterized in that, described reflection horizon extends to described sensing electrode patterned layer, and is made of the same material layer with described conductor layer.
18. the manufacture method of touch sensing device as claimed in claim 16 is characterized in that, described reflection horizon is a non-conductive reflection horizon.
19. the manufacture method of touch sensing device as claimed in claim 16 is characterized in that, the manufacture method of described touch sensing device more comprises:
Form a metal level in the described transparent substrates top of described non-sensing area, to cover described reflection horizon.
20. the manufacture method of touch sensing device as claimed in claim 19 is characterized in that, described metal level extends to described sensing electrode patterned layer, and is made of the same material layer with described conductor layer.
21. the manufacture method of touch sensing device as claimed in claim 20 is characterized in that, the manufacture method of described touch sensing device more comprises formation one protective seam, to cover described metal level, described sensing electrode patterned layer and described conductor layer.
22. the manufacture method of touch sensing device as claimed in claim 15 is characterized in that, the manufacture method of described touch sensing device more comprises:
Form a first metal layer in the described transparent substrates top of described non-sensing area, to cover the described First of described Inorganic Dielectric Material layer;
Form one second metal level in described the first metal layer top and extend to described sensing electrode patterned layer, and form simultaneously a conductor layer on described second one of described Inorganic Dielectric Material layer, to be electrically connected to described the second sense electrode groups one second on axially; And
Form a separation layer and be located between described the first metal layer and described the second metal level, make described the first metal layer and described the second metal level electrical isolation.
23. the manufacture method of touch sensing device as claimed in claim 22 is characterized in that, the manufacture method of described touch sensing device more comprises formation one protective seam, to cover described the second metal level and described conductor layer.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104838344A (en) * 2013-07-11 2015-08-12 株式会社爱发科 Crystalline forms of factor xia inhibitor
CN105005402A (en) * 2014-04-22 2015-10-28 群创光电股份有限公司 Touch panel
US9733773B2 (en) 2014-04-22 2017-08-15 Innolux Corporation Touch panel using a dielectric layer to adjust colors of an active area and a peripheral area
CN107735751A (en) * 2015-07-08 2018-02-23 阿尔卑斯电气株式会社 Tactile representation device
US10429964B2 (en) 2014-05-01 2019-10-01 Ulvac, Inc. Touch panel, method of manufacturing touch panel, and optical thin film

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201036187A (en) * 2009-03-16 2010-10-01 Au Optronics Corp Active device array substrate and method for fabricating thereof
CN101920586A (en) * 2009-06-16 2010-12-22 株式会社尼德克 The manufacture method of decoration sheet, decoration sheet formed body and decoration sheet
US20100321341A1 (en) * 2009-06-18 2010-12-23 An-Thung Cho Photo sensor, method of forming the same, and optical touch device
TW201107826A (en) * 2009-08-27 2011-03-01 Samsung Mobile Display Co Ltd Touch screen paner and fabrication method thereof
US20110157084A1 (en) * 2009-12-30 2011-06-30 Yen-Liang Huang Capacitive touch display panel and capacitive touch board
CN102129135A (en) * 2010-01-15 2011-07-20 东莞万士达液晶显示器有限公司 Touch display device
CN102213852A (en) * 2010-04-09 2011-10-12 上海天马微电子有限公司 Touch displaying device and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100530065C (en) * 2006-04-20 2009-08-19 铼宝科技股份有限公司 Transparent touch-control panel structure
TWI367437B (en) * 2007-09-29 2012-07-01 Au Optronics Corp Touch panel and manufacturing method thereof
CN101452362B (en) * 2007-12-07 2012-04-25 台达电子工业股份有限公司 Touching control panel and its manufacture method
TWM371271U (en) * 2009-07-10 2009-12-21 Shinan Snp Taiwan Co Ltd Thin touch panel

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201036187A (en) * 2009-03-16 2010-10-01 Au Optronics Corp Active device array substrate and method for fabricating thereof
CN101920586A (en) * 2009-06-16 2010-12-22 株式会社尼德克 The manufacture method of decoration sheet, decoration sheet formed body and decoration sheet
US20100321341A1 (en) * 2009-06-18 2010-12-23 An-Thung Cho Photo sensor, method of forming the same, and optical touch device
TW201107826A (en) * 2009-08-27 2011-03-01 Samsung Mobile Display Co Ltd Touch screen paner and fabrication method thereof
US20110157084A1 (en) * 2009-12-30 2011-06-30 Yen-Liang Huang Capacitive touch display panel and capacitive touch board
CN102129135A (en) * 2010-01-15 2011-07-20 东莞万士达液晶显示器有限公司 Touch display device
CN102213852A (en) * 2010-04-09 2011-10-12 上海天马微电子有限公司 Touch displaying device and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104838344A (en) * 2013-07-11 2015-08-12 株式会社爱发科 Crystalline forms of factor xia inhibitor
CN104838344B (en) * 2013-07-11 2018-01-12 株式会社爱发科 Touch panel, the manufacture method of touch panel, optical film substrate and its manufacture method
US9891731B2 (en) 2013-07-11 2018-02-13 Ulvac, Inc. Touch panel, method of producing the same, optical thin film substrate and method of producing the same
CN105005402A (en) * 2014-04-22 2015-10-28 群创光电股份有限公司 Touch panel
US9733773B2 (en) 2014-04-22 2017-08-15 Innolux Corporation Touch panel using a dielectric layer to adjust colors of an active area and a peripheral area
US10429964B2 (en) 2014-05-01 2019-10-01 Ulvac, Inc. Touch panel, method of manufacturing touch panel, and optical thin film
CN107735751A (en) * 2015-07-08 2018-02-23 阿尔卑斯电气株式会社 Tactile representation device

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