CN103087557A - Semiconductor infrared ceramic coating - Google Patents
Semiconductor infrared ceramic coating Download PDFInfo
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- CN103087557A CN103087557A CN2011103481283A CN201110348128A CN103087557A CN 103087557 A CN103087557 A CN 103087557A CN 2011103481283 A CN2011103481283 A CN 2011103481283A CN 201110348128 A CN201110348128 A CN 201110348128A CN 103087557 A CN103087557 A CN 103087557A
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Abstract
The invention relates to a semiconductor infrared ceramic coating and its preparation method. The semiconductor infrared ceramic coating is a mixture formed through mixing a powder mixture with a binder solution and uniformly mixing the mixture with deionized water according to a weight ratio of 1:1, wherein the powder mixture is formed through mixing an oxide, semiconductor ceramic powder and an assistant according to a certain weight ratio; the semiconductor ceramic powder is SnO2; the oxide is one of metal oxides comprising CuO2, Sb2O3, ZnO, Co3O4 and Ni2O3 or is a mixture of more of the metal oxides; the binder is obtained through mixing 80wt% of an organic silicon resin with 20wt% of an epoxy resin; the assistant is one of a suspension agent, a leveling agent, a wetting dispersion agent and an emulsification agent; the weight percentage content of the semiconductor ceramic powder SnO2 is 80-95%; and the oxide comprises 0-5wt% of CuO2, 0-15wt% of Sb2O3, 0-5wt% of ZnO, 0-15wt% of Co3O4 and 0-10wt% of Ni2O3.
Description
Technical field
The present invention relates to a kind of heat accumulation coating, espespecially a kind of semiconductor infrared ceramic coating for applying on industry heating facility or civilian equipment to be heated.
Background technology
no matter be in producing or living, the consumption that reduces the energy is all very important thing, be particularly only 1/2 of world's per capita share for Energy resources occupancy volume per capita, only be equivalent to the U.S. per capita Energy resources level 1/10 we the country, because the relative developed country of China's energy utilization technology level falls behind, stove thermo-efficiency is low, same utilization results of energy can be brought more serious pollution to environment, in order to save the consumption of the energy, people's various infrared energy-conserving paints that begin one's study, be used for being coated in the surface of heat tracing vessel, to reach purpose energy-conservation and the reduction energy consumption, at present, the matrix of powder material of infrared radiation coating is mainly mixture and the carbide of metal oxide, mainly contain Cr203, Ti02, Zr02, Fe203, Mn02, NiO, CoO, CuO, Si02, A1203, MgO, La203, CeO, SiC etc.different according to the composition of infrared radiation coating, these infrared radiation coatings can be divided into following several classification: ferric oxide-manganese oxide series, aluminium oxide-silicon oxide series, zirconium white series, cobalt oxide series, chromic oxide series, trichroite series, silicon-carbide series etc., the emittance of oxide compound series is below 0.9, the infrared emittance of silicon-carbide series infra-red material is in 0.9 left and right, these infrared radiation coatings in use can produce problem of oxidation, cause emittance to reduce because of material generation oxidation meeting after use after a while, energy-conservation effect also decreases.Infra-red material in the present invention has the infrared emittance more than 0.95, and process contrasts with the coating that other infra-red material is made, and energy-saving effect is better, and can not produce the phenomenon of oxidation, and greatly extend the work-ing life of product.
Summary of the invention
The present invention overcomes existing problem, provide a kind of to can absorb heat and accumulation of heat and can sustained release the semiconductor infrared ceramic coating of infrared energy.
The mixture that the combination powder that a kind of semiconductor infrared ceramic coating of the present invention, this semiconductor infrared ceramic coating are a kind of oxide compound that makes by certain weight ratio, semiconductive ceramic powder, auxiliary agent consists of and the solution of binding agent form, wherein:
Semiconductive ceramic powder: be SnO2;
Oxide compound: in component following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, one or more mix the mixture that forms arbitrarily;
Mixture and deionized water that above-mentioned all substances consist of mix according to the weight percent of 1:1, obtain uniform solution paint.
For semiconductor infrared ceramic coating of the present invention, above-mentioned binding agent is that silicone resin and epoxy resin are that 80% and 20% ratio is mixed according to weight percent.
For semiconductor infrared ceramic coating of the present invention, above-mentioned auxiliary agent be suspension agent flow agent wetting dispersing agent a kind of in emulsifying agent.
For semiconductor infrared ceramic coating of the present invention, the weight percent content of above-mentioned semiconductive ceramic powder SnO2 is 80%-95%.
The weight percent of above-mentioned oxide component is as follows: CuO2 0-5%, Sb2O3 0-15%, ZnO 0-5%, Co3O4 0-15%, Ni2O3 0-10%.
A kind of semiconductor infrared ceramic coating preparation method, this preparation method comprises the steps:
Step 1, with one or more even mixed powder arbitrarily in SnO2 and following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, be dried to the humidity of powder less than 70%;
Step 2, the mixture that makes in step 1 is put into crucible, putting into High Temperature Furnaces Heating Apparatus, to be fired to temperature be 1250-1350 ℃, and soaking time 5-10 hour;
Step 3, the powder that step 2 is made are put into ball mill and are ground, and be ground to the meta particle diameter less than 1 μ m;
Step 4, the powder that step 3 is made carry out drying, make semiconductor infrared ceramic coating of the present invention;
Step 5, the micro mist that step 4 is made add silicone resin a kind of mixture that evenly is mixed to get of mixture in silicone resin and epoxy resin, then with deionized water, mix according to the weight percent of 1:1, obtain uniform coating solution.
During use, adopt the method for spraying to spray to matrix surface this coating and form needed infrared coating.Made coating can adopt spraying or rinse and be coated with technique and be coated on equipment to be heated or vessel to be heated, reaches purpose energy-conservation and protection equipment.
Semiconductor infrared ceramic coating of the present invention, have good energy-saving effect and convenient preparation, in this coating, the infra-red china powder is take SnO2 as chief component, one or more of the metal oxides such as admixture CuO, Sb2O3, ZnO, Co3O4, Ni2O3, wherein SnO2 content is at 80%-95%, and other element doping is at 25%-5%.This material by difference form mixing, high temperature synthetic, pulverize, grind after preparation, this powder has greater than the emittance more than 0.95 at the mid and far infrared wave band of 3-5 μ m and 8-14 μ m, binding agent is mainly selected silicone resin high temperature resistant, strong adhesion also can adopt refractory inorganic binder according to the environment for use condition.This coating is mainly used on industry and civilian vessel to be heated, dry drying plant waits on heating installation having the effect of stronger heat absorption and heat storage, can realize the energy-saving effect more than 30%.
Relevant detailed content of the present invention and technology hereby just coordinate description of drawings as follows.
Description of drawings
Fig. 1, for the process flow sheet of the first embodiment of the present invention.
Embodiment
The present invention is a kind of semiconductor infrared ceramic coating, and this semiconductor infrared ceramic coating is the mixture that the solution of the combination powder that consists of of a kind of oxide compound that makes by certain weight ratio, semiconductive ceramic powder and auxiliary agent and binding agent forms, wherein:
Semiconductive ceramic powder: be SnO2;
Oxide compound: in component following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, one or more mix the mixture that forms arbitrarily;
The mixture that above-mentioned all substances consist of and deionized water mix according to the weight percent of 1:1, obtain uniform coating solution.
For semiconductor infrared ceramic coating of the present invention, above-mentioned binding agent is that silicone resin and epoxy resin are that 80% and 20% ratio is mixed according to weight percent.
For semiconductor infrared ceramic coating of the present invention, above-mentioned auxiliary agent be suspension agent flow agent wetting dispersing agent a kind of in emulsifying agent.
For semiconductor infrared ceramic coating of the present invention, the weight percent content of above-mentioned semiconductive ceramic powder SnO2 is 80%-95%.
The weight percent of above-mentioned oxide component is as follows: CuO2 0-5%, Sb2O3 0-15%, ZnO 0-5%, Co3O4 0-15%, Ni2O3 0-10%.
Above-mentioned oxide component is in mixing process, each component that first composition is coated with ceramic powder by the proportioning weighing of determining after, carry out wet mixing or be dry mixed in ball mill, till then mixing with each component, complete slip being carried out drying as adopting wet mixing to mix.
A kind of semiconductor infrared ceramic coating preparation method, this preparation method comprises the steps:
Step 1, with one or more even mixed powder arbitrarily in SnO2 and following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, be dried to the humidity of powder less than 70%;
Step 2, the mixture that makes in step 1 is put into crucible, putting into High Temperature Furnaces Heating Apparatus, to be fired to temperature be 1250-1350 ℃, and soaking time 5-10 hour;
Step 3, the powder that step 2 is made are put into ball mill and are ground, and be ground to the meta particle diameter less than 1 μ m;
Step 4, the powder that step 3 is made carry out drying, make semiconductor infrared ceramic coating of the present invention;
Step 5, the micro mist that step 4 is made add silicone resin a kind of mixture that evenly is mixed to get of mixture in silicone resin and epoxy resin, then with deionized water, mix according to the weight percent of 1:1, obtain uniform coating solution.
Please refer to shown in Figure 1, process flow sheet for the first embodiment, the oxide compound that components by weight percent is following mixes, SnO2 80%, CuO 5%, Sb2O3 10%, ZnO 1%, Co3O4 2%, Ni2O3 2%, the granularity of above each component surpasses 325 orders (being that the meta particle diameter is less than 1 μ m), mixes compacting in the saggar of packing into afterwards in mixer, carry out high temperature synthetic, synthesis temperature is 1320 ℃.After naturally cooling, synthetic powder is ground in ball mill, powder is ground to about meta particle diameter 1 μ m, carries out drying, and powder is standby.Above-mentioned powder and silicone resin are mixed to get mixture with the 1:3 weight ratio, this mixture and deionized water, weight percent according to 1:1 mixes, and obtains uniform coating solution and makes the test that coating is carried out infrared emittance, and infrared emittance is 0.93.
Embodiment two: the oxide compound that components by weight percent is following mixes, SnO2 95%, CuO 2%, Sb2O3 3% ZnO 1%, Co3O4 2%, Ni2O3 2%, the granularity of above each component surpasses 325 orders (being that the meta particle diameter is less than 1 μ m), mix in mixer, the compacting in saggar of packing into afterwards, carry out high temperature synthetic, synthesis temperature is 1320 ℃.After naturally cooling, synthetic powder is ground in ball mill, powder is ground to about meta particle diameter 1 μ m, carries out drying, and powder is standby.Above-mentioned powder and silicone resin are mixed to get mixture mutually with the mass ratio of 1:3, this mixture and deionized water, weight percent according to 1:1 mixes, obtain uniform coating solution and make the test that coating is carried out infrared emittance, the coating infrared emittance that the powder of preparation is made is 0.95.
Embodiment three: the oxide compound that components by weight percent is following mixes, SnO2 90%, CuO 2%, Sb2O3 5%, ZnO 1%, Co3O4 1%, Ni2O3 2%, the granularity of above each component surpasses 325 orders (being that the meta particle diameter is less than 1 μ m), mix in mixer, the compacting in saggar of packing into afterwards, carry out high temperature synthetic, synthesis temperature is 1320 ℃.After naturally cooling, synthetic powder is ground in ball mill, powder is ground to about meta particle diameter 1 μ m, carries out drying, and powder is standby.Above-mentioned powder and silicone resin are mixed to get mixture with the weight ratio of 1:3, this mixture and deionized water, weight percent according to 1:1 mixes, obtain uniform coating solution and make the test that coating is carried out infrared emittance, the coating infrared emittance that the powder of preparation is made is 0.95.
Embodiment four: the oxide compound that components by weight percent is following mixes, SnO2 85%, CuO2 5%, Sb2O3 5%, ZnO 1%, Co3O4 5%, Ni2O3 2%, the granularity of above each component surpasses 325 orders (being that the meta particle diameter is less than 1 μ m), mix in mixer, the compacting in saggar of packing into afterwards, carry out high temperature synthetic, synthesis temperature is 1320 ℃.After naturally cooling, synthetic powder is ground in ball mill, powder is ground to about meta particle diameter 1 μ m, carries out drying, and powder is standby.Above-mentioned powder and silicone resin are mixed to get mixture with the mass ratio of 1:3, this mixture and deionized water, mass percent according to 1:1 mixes, obtain uniform coating solution and make the test that coating is carried out infrared emittance, the coating infrared emittance that the powder of preparation is made is 0.95, and the coating infrared emittance that the powder of preparation is made is 0.95.
Claims (6)
1. semiconductor infrared ceramic coating is characterized in that: this semiconductor infrared ceramic coating is the mixture that the combination powder that consists of of a kind of oxide compound, semiconductive ceramic powder and auxiliary agent that makes by certain weight ratio and binder solution consist of, wherein:
Semiconductive ceramic powder: be SnO2;
Oxide compound: in component following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, one or more mix the mixture that forms arbitrarily;
The mixture that above-mentioned all substances consist of and deionized water mix according to the weight percent of 1:1, obtain uniform coating solution.
2. semiconductor infrared ceramic coating according to claim 1 is characterized in that: described binding agent is that silicone resin and epoxy resin are that 80% and 20% ratio is mixed according to weight percent.
3. semiconductor infrared ceramic coating according to claim 1 is characterized in that: described auxiliary agent be suspension agent flow agent wetting dispersing agent a kind of in emulsifying agent.
4. semiconductor infrared ceramic coating according to claim 1, it is characterized in that: the weight percent content of described semiconductive ceramic powder SnO2 is 80%-95%.
5. semiconductor infrared ceramic coating according to claim 4, it is characterized in that: the weight percent of described oxide component is as follows: CuO2 0-5%, Sb2O3 0-15%, ZnO 0-5%, Co3O4 0-15%, Ni2O3 0-10%.
6. semiconductor infrared ceramic coating preparation method, it is characterized in that: this preparation method comprises the steps:
Step 1, with one or more even mixed powder arbitrarily in SnO2 and following metal oxide CuO2, Sb2O3, ZnO, Co3O4, Ni2O3, be dried to the humidity of powder less than 70%;
Step 2, the mixture that makes in step 1 is put into crucible, putting into High Temperature Furnaces Heating Apparatus, to be fired to temperature be 1250-1350 ℃, and soaking time 5-10 hour;
Step 3, the powder that step 2 is made are put into ball mill and are ground, and be ground to the meta particle diameter less than 1 μ m;
Step 4, the powder that step 3 is made carry out drying, make semiconductor infrared ceramic coating of the present invention;
Step 5, the micro mist that step 4 is made add silicone resin or silicone resin and epoxy resin in a kind of mixture that evenly is mixed to get of mixture, then with deionized water, mix according to the weight percent of 1:1, obtain uniform coating solution.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104310989A (en) * | 2014-09-29 | 2015-01-28 | 青岛康合伟业商贸有限公司 | Preparation method of conductive ceramic material |
| CN108774463A (en) * | 2018-07-13 | 2018-11-09 | 云浮市港泰环保节能材料有限公司 | A kind of high energy-saving coatings of porcelainization and its preparation method and application |
| CN112251140A (en) * | 2020-10-28 | 2021-01-22 | 常州天瑞新材料科技有限公司 | Stain-resistant antibacterial ceramic coating |
| CN114716912A (en) * | 2022-05-20 | 2022-07-08 | 信和新材料（苏州）有限公司 | High-temperature-resistant heat-dissipation coating and preparation method and application thereof |
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| JPH01146970A (en) * | 1987-12-03 | 1989-06-08 | Toray Ind Inc | Transparent, heat-resistant, conductive coating agent composition |
| JP2004043612A (en) * | 2002-07-11 | 2004-02-12 | Okitsumo Kk | Heat dissipating coating material |
| CN1515633A (en) * | 2003-01-06 | 2004-07-28 | 马承银 | Heat-isolating coating capable of reflecting solar heat ray |
| CN101050065A (en) * | 2007-05-15 | 2007-10-10 | 朱建强 | Composition of insulating mold coating in use for glass, and preparation method |
| CN101092299A (en) * | 2007-05-16 | 2007-12-26 | 中材高新材料股份有限公司 | Ceramics powder material of absorbing laser and preparation method |
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2011
- 2011-11-07 CN CN2011103481283A patent/CN103087557A/en active Pending
Patent Citations (5)
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| JPH01146970A (en) * | 1987-12-03 | 1989-06-08 | Toray Ind Inc | Transparent, heat-resistant, conductive coating agent composition |
| JP2004043612A (en) * | 2002-07-11 | 2004-02-12 | Okitsumo Kk | Heat dissipating coating material |
| CN1515633A (en) * | 2003-01-06 | 2004-07-28 | 马承银 | Heat-isolating coating capable of reflecting solar heat ray |
| CN101050065A (en) * | 2007-05-15 | 2007-10-10 | 朱建强 | Composition of insulating mold coating in use for glass, and preparation method |
| CN101092299A (en) * | 2007-05-16 | 2007-12-26 | 中材高新材料股份有限公司 | Ceramics powder material of absorbing laser and preparation method |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104310989A (en) * | 2014-09-29 | 2015-01-28 | 青岛康合伟业商贸有限公司 | Preparation method of conductive ceramic material |
| CN108774463A (en) * | 2018-07-13 | 2018-11-09 | 云浮市港泰环保节能材料有限公司 | A kind of high energy-saving coatings of porcelainization and its preparation method and application |
| CN108774463B (en) * | 2018-07-13 | 2021-01-29 | 云浮市港泰环保节能材料有限公司 | Ceramic high-energy-saving coating and preparation method and application thereof |
| CN112251140A (en) * | 2020-10-28 | 2021-01-22 | 常州天瑞新材料科技有限公司 | Stain-resistant antibacterial ceramic coating |
| CN114716912A (en) * | 2022-05-20 | 2022-07-08 | 信和新材料（苏州）有限公司 | High-temperature-resistant heat-dissipation coating and preparation method and application thereof |
| CN114716912B (en) * | 2022-05-20 | 2022-11-15 | 信和新材料（苏州）有限公司 | High-temperature-resistant heat-dissipation coating and preparation method and application thereof |
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Application publication date: 20130508 |