CN103078062A - Organic electroluminescence device and preparation method thereof - Google Patents
Organic electroluminescence device and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the technical field of organic electroluminescence and provides an organic electroluminescence device and a preparation method thereof. The organic electroluminescence device comprises an anode layer, an organic functional layer, a cathode layer and a glass substrate layer which are stacked in sequence, wherein the glass substrate layer is shaped as a spherical surface; and the anode layer, the organic functional layer, the cathode layer and the glass substrate layer are arranged in sequence along the radial direction of the spherical surface. According to the organic electroluminescence device, a microcavity effect is formed by the spherical glass substrate layer and an inverted bottom emission structure, so that total internal reflection and transverse waveguide output of the organic electroluminescence device are adjusted, and the light-emitting efficiency of the organic electroluminescence device is remarkably promoted; and the preparation method of the organic electroluminescence device is low in cost, simple to operate and suitable for industrial production.
Description
Technical field
The invention belongs to technical field of organic electroluminescence, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device has important commercial value.Ordinary circumstance, device under the 10V driving voltage, transmitting green light, brightness is up to 1000cd/m
2, efficient reaches 1.5lm/W, and the life-span was above 1000 hours.But, because the difference of the inside and outside refractive index of device, cause the light that sends at device inside to only have fraction can arrive extraneous air and utilized by us, most of light then is closed in device inside, is finally absorbed by inner material and becomes heat through refraction repeatedly.The light that luminescent layer sends has passed through the process of the optical coupling such as absorption, reflection and refraction of each organic layer, ITO and substrate of glass.The method that improves at present the organic electroluminescence device coupling efficiency is a lot, for example, and 1, increase the surface roughness of substrate and Air Interface; Etching groove on substrate of glass, these grooves play a part reflective mirror, and light is derived again; 2, use the close circle lens of refraction index in glass back, by changing the size of lens, change critical angle, again with light-output; 3, employing improves scattering at substrate surface periodic arrangement silicon microballoon, and lateral wave leaded light vertical sand shooting is gone out; 4, also can adopt the Bragg reflection face of arranged distribution or between substrate of glass and ITO layer, insert the light extraction efficiency etc. that one deck low-refraction material also can increase device.But these methods generally all can make the preparation process of device more loaded down with trivial details, and make emission spectrum generation dependence of angle, the light extraction efficiency of device improves also insufficient, can not take into account total reflection and the transversal waveguides loss of device, and final luminous efficiency is still not high.
Summary of the invention
In view of this, the invention provides a kind of organic electroluminescence device, solve the not high technical problem of organic electroluminescence device luminous efficiency in the prior art.
The present invention is achieved in that
A kind of organic electroluminescence device, comprise the anode layer, organic function layer, cathode layer and the glass-based bottom that stack gradually, this glass-based bottom is spheric, this anode layer, organic function layer, cathode layer and substrate of glass are arranged in order along this sphere radial direction, also comprise antireflection layer, this antireflection layer is fitted between described cathode layer and the glass-based bottom.
And,
Above-mentioned organic electroluminescence device preparation method comprises the steps:
Get the substrate of glass of a spheric, this substrate of glass is carried out clean;
Form antireflection layer by vacuum evaporation at the inner surface of the substrate of glass of described spheric;
Form cathode layer by vacuum evaporation at the inner surface of this antireflection layer;
Form organic function layer by vacuum evaporation at the inner surface of this cathode layer;
Form anode layer by vacuum evaporation at the inner surface of this organic function layer, obtain organic electroluminescence device.
Organic electroluminescence device of the present invention, glass-based bottom and inversion end emitting structural by the spherical surface body structure form microcavity effect, regulate total internal reflection and the transversal waveguides output of organic electroluminescence device, have realized the remarkable lifting of device luminous efficiency; Organic electroluminescence device preparation method of the present invention, with low cost, simple to operate, be applicable to suitability for industrialized production.
Description of drawings
Fig. 1 is embodiment of the invention organic electroluminescence device longitudinal section;
Fig. 2 is the organic function layer longitudinal section of embodiment of the invention organic electroluminescence device;
Fig. 3 is the organic electroluminescence device brightness-voltage relationship comparison diagram of the embodiment of the invention one and Comparative Examples.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
See also Fig. 1, Fig. 1 shows the longitudinal section of embodiment of the invention organic electroluminescence device, embodiment of the invention organic electroluminescence device comprises anode layer 1, organic function layer 2, cathode layer 3 and the glass-based bottom 4 that stacks gradually, this glass-based bottom 4 is spheric, this anode layer 1, organic function layer 2, cathode layer 3 and glass-based bottom 4 are arranged in order along this sphere radial direction, also comprise antireflection layer 5, described antireflection layer 5 is fitted between described cathode layer 3 and the glass-based bottom 4.
Particularly, this glass-based bottom 4 is spheric, and these glass-based bottom 4 internal diameters are 2 millimeters～10 millimeters, is preferably 3 millimeters～8 millimeters, for example, and 4 millimeters, 5 millimeters, 6 millimeters, 7 millimeters;
Particularly, this cathode layer 3 and this glass-based bottom 4 stacked, so this cathode layer 3 is spheric; The thickness of this cathode layer 3 is 10 nanometers～30 nanometers, is preferably 20 nanometers; This cathode layer 3 is positioned at the inner surface of this glass-based bottom 4, and is mutually stacked with this glass-based bottom 4, and this glass-based bottom 4 and this cathode layer 3 radially are arranged in order along these glass-based bottom 4 spheres, also namely this negative electrode 3 near the centre of sphere or the center of these substrate of glass 4.
Embodiment of the invention organic electroluminescence device also comprises antireflection layer 5, and this antireflection layer 5 is spheric, and this antireflection layer 5 is fitted between this glass-based bottom 4 and this cathode layer 3, realizes that this glass-based bottom 4 of this antireflection layer 5 and this and this cathode layer 3 are mutually stacked.The thickness of this antireflection layer 5 is 20 nanometers～30 nanometers; By between cathode layer and glass-based bottom, adding one deck antireflection layer, utilize the principle of interference of film, make by the reverberation at antireflective coating interface and cancel out each other to reach the purpose that reduces reflection, thus the transmitance of raising semitransparent cathode metal;
Particularly, this organic function layer 2 is stratiform, this organic function layer 2 and this cathode layer 3 are stacked, this organic function layer also is spheric, this organic function layer 2 is positioned at the inner surface of this cathode layer 3, mutually stacked with this cathode layer 3, this cathode layer 3 and organic function layer 2 radially are arranged in order along these glass-based bottom 4 spheres, also namely this organic function layer 3 near the centre of sphere or the center of these glass-based bottoms 4.
Further, see also Fig. 2, Fig. 2 shows the longitudinal section of this organic function layer, and this organic function layer 2 comprises hole transmission layer 21, luminescent layer 22, hole blocking layer 23 and electron transfer layer 24, and this hole transmission layer 21, luminescent layer 22, hole blocking layer 23 and electron transfer layer 24 are layer structure; This electron transfer layer 24, hole blocking layer 23, luminescent layer 22 and hole transmission layer 21 are arranged in order along these glass-based bottom 4 sphere radial direction, and also, this hole transmission layer 21 is near the centre of sphere or the center of this substrate of glass 4.
Particularly, the thickness of this hole transmission layer 21 is 20 nanometers～80 nanometers, is preferably 40 nanometers; The thickness of this luminescent layer 22 is 30 nanometers～60 nanometers, is preferably 40 nanometers; The thickness of this hole blocking layer 23 is 2 nanometers～20 nanometers, is preferably 10 nanometers; The thickness of this electron transfer layer 24 is 30 nanometers～60 nanometers, is preferably 40 nanometers;
Particularly, this anode layer 1 and this organic function layer 2 are stacked, and this anode layer 1 also is spheric; This anode layer 1 is positioned at the inner surface of this organic function layer 2, and is mutually stacked with this organic function layer 2, and this organic function layer 2 and anode layer 1 radially are arranged in order along these glass-based bottom 4 spheres, also namely this anode layer 1 near the centre of sphere or the center of this glass-based bottom 4.The thickness of this anode 1 is 100 nanometers～200 nanometers, is preferably 150 nanometers.
Particularly, because anode layer 1, organic function layer 2, cathode layer 3 and glass-based bottom 4 are spheric, and stack gradually, therefore, embodiment of the invention organic electroluminescence device also is spheric, and this anode 1, organic function layer 2, negative electrode 3 and substrate of glass are arranged in order along described sphere radial direction.
Embodiment of the invention organic electroluminescence device, by its spheric structure, the total internal reflection loss that will be caused by the difference of luminescent layer and air refraction penetrates by the curved surface refraction, simultaneously, the transversal waveguides loss of organic layer is caught, the light extraction efficiency of device is increased greatly, realized the remarkable lifting of device luminous efficiency; Be inverted device architecture by adopting, anode and negative electrode are metal, and the translucent positive pole of bottom and the mirror surface of top substrate of glass form microcavity effect, by the interference of light effect, the emission spectrum that narrowed has strengthened radioluminescence, has realized the greatly lifting of device luminous efficiency;
The embodiment of the invention further provides the preparation method of above-mentioned organic electroluminescence device, comprises the steps:
Step S01 provides a spheric substrate of glass:
Get the substrate of glass of a spheric, this substrate of glass is carried out clean;
Step S02, the preparation antireflection layer:
Form antireflection layer by vacuum evaporation at the inner surface of this spheric substrate of glass;
Step S03, the preparation cathode layer:
Form cathode layer by vacuum evaporation at the inner surface of described antireflection layer;
Step S04, the preparation organic function layer:
Form organic function layer by vacuum evaporation at the inner surface of this cathode layer;
Step S05, the preparation anode:
Form anode by vacuum evaporation at the inner surface of this organic function layer, obtain organic electroluminescence device.
Particularly, among the step S01, get a spheric substrate of glass, the internal diameter of this spheric substrate of glass is 2 millimeters～10 millimeters, is preferably 3 millimeters～8 millimeters, for example, and 4 millimeters, 5 millimeters; This substrate of glass is carried out following clean:
The hemisphere substrate of glass is used successively each ultrasonic cleaning 10～15min such as pure water, acetone, ethanol.
Particularly, among the step S02, the cavity of the substrate of glass after cleaning being put into vacuum coating equipment carries out vacuum evaporation, forms antireflection layer at the inner surface of this substrate of glass.The antireflection layer that forms at this substrate of glass inner surface by vacuum coating is layer structure, and particularly, the shape of this antireflection layer and this substrate of glass is identical, is spheric; The thickness of this antireflection layer is 20 nanometers～80 nanometers;
The material of this antireflection layer is selected from tellurium dioxide (TeO
2), zinc selenide (ZnSe), zinc sulphide (ZnS), molybdenum trioxide (MoO
3), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), oxine aluminium (Alq
3) or 4,4 ', 4 " three (3-aminomethyl phenyl aniline) triphenylamines (m-MTDATA).
Particularly, among the step S03, the cavity that this substrate of glass that contains antireflection layer is put into vacuum coating equipment carries out vacuum evaporation, inner surface at this antireflection layer forms negative electrode, be layer structure by vacuum coating at the negative electrode that the inner surface of this antireflection layer forms, particularly, the shape of this negative electrode and this substrate of glass is identical, is spheric; The thickness of this negative electrode is 10 nanometers～30 nanometers, is preferably 20 nanometers;
The material of this negative electrode is that described negative electrode is silver (Ag), aluminium (Al), calcium/silver alloy (Ca/Ag), aluminium/silver alloy (Al/Ag) or silver/aluminium/lithium fluoride alloy (Ag/Al/LiF), is preferably Ag.
Particularly, among the step S04, there is the substrate of glass of negative electrode to put into vacuum coating equipment evaporation and carries out vacuum evaporation, form electron transfer layer at the inner surface of this negative electrode.The electron transfer layer that forms in this cathode inner surface by vacuum coating is layer structure, and particularly, the shape of this electron transfer layer and this negative electrode is identical, identical, is spheric; The thickness of this electron transfer layer is 30 nanometers～60 nanometers, is preferably 40 nanometers;
After evaporation forms electron transfer layer, there is the substrate of glass of electron transfer layer to proceed vacuum evaporation this evaporation, forms hole blocking layer at the inner surface of this electron transfer layer.The hole blocking layer that forms at this electron transfer layer inner surface by vacuum coating is layer structure, and particularly, the shape of this hole blocking layer and this electron transfer layer is identical, is spheric; The thickness of this hole blocking layer is 2 nanometers～20 nanometers, is preferably 10 nanometers;
After evaporation forms hole blocking layer, there is the substrate of glass of hole blocking layer to proceed vacuum evaporation this evaporation, forms luminescent layer at the inner surface of this hole blocking layer.The luminescent layer that forms at this hole blocking layer inner surface by vacuum coating is layer structure, and particularly, the shape of this luminescent layer and this hole blocking layer is identical, is spheric; The thickness of this luminescent layer is 30 nanometers～60 nanometers, is preferably 40 nanometers;
After evaporation forms luminescent layer, there is the substrate of glass of luminescent layer to proceed vacuum evaporation evaporation, forms hole transmission layer at this luminescent layer inner surface; The hole transmission layer that forms at this luminescent layer inner surface by vacuum coating is layer structure, and particularly, the shape of this hole transmission layer and this luminescent layer is identical, is spheric; The thickness of this hole transmission layer is 20 nanometers～80 nanometers, is preferably 40 nanometers;
The material of electron transfer layer is cesium carbonate (Cs
2CO
3), cesium azide (CsN
3), cesium fluoride (CsF), lithium fluoride (LiF), lithia (Li
2O) or lithium carbonate (Li
2CO
3) and 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1, the mixture that 2,4-triazole derivative (such as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ) form;
The material of hole blocking layer is selected from 2-(4-xenyl)-5-(the 4-tert-butyl group) phenyl-1,3,4-oxadiazole (PBD), oxine aluminium (Alq
3), 2,5-two (1-naphthyl)-1,3,4-diazole (BND), 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (such as TAZ), N-aryl benzimidazole (TPBI) or quinoxaline derivant (TPQ);
The material of luminescent layer is comprised of luminescent material and material of main part, luminescent material: 4,4 '-two (9-ethyls-3-carbazole vinyl)-1, and 10-diphenyl (BCzVBi), three (2-phenylpyridines) close iridium (Ir (ppy)
3), two (2-methyl-diphenyl quinoxaline) (acetylacetone,2,4-pentanediones) close iridium (Ir (MDQ)
2(acac)) or three (1-phenyl-isoquinolin) close iridium (Ir (piq)
3) and material of main part: 4,4 ', 4 " three (carbazole-9-yl) triphenylamine (TCTA), 1,2,4-triazole derivative (such as TAZ) or N-aryl benzimidazoles (TPBI);
The material of hole transmission layer is tetrafluoro four cyano 1,4-benzoquinone bismethane (F4-TCNQ), four cyano 1,4-benzoquinone bismethane (TCNQ) or molybdenum trioxide (MoO
3), tungstic acid (WO
3), vanadic oxide (V
2O
5) be doped to hole mobile material 4,4 ', 4 " three (3-aminomethyl phenyl aniline) triphenylamine (m-MTDATA), N; N '-two (3-aminomethyl phenyl)-N; N '-diphenyl-4,4 '-benzidine (TPD), 4,4 '; 4 "-three (carbazole-9-yl) triphenylamine (TCTA), N, N '-(1-naphthyl)-N, N '-diphenyl-4,4 '-benzidine (NPB) or 1,3,5-triphenylbenzene (TDAPB).
Particularly, among the step S05, the wire chamber that evaporation has the substrate of glass of organic function layer to put into vacuum coating equipment is proceeded vacuum evaporation, form anode at this hole transmission layer inner surface, the anode that forms at this hole transmission layer inner surface by vacuum coating is layer structure, particularly, the shape of this anode and this hole transmission layer is identical, is spheric; The thickness of this anode is 100 nanometers～200 nanometers, is preferably 150 nanometers; The material of this anode is selected from silver (Ag), aluminium (Al), platinum (Pt), gold (Au), silver oxide/silver (Ag
2O/Ag) or molybdenum trioxide/silver (MoO
3/ Ag), be preferably Al.
Embodiment of the invention organic electroluminescence device, by selecting the substrate of glass of spheric, on the inner surface of this spheric substrate of glass, form each functional layer by vacuum evaporation, so that this glass-based bottom is spheric, and for being inverted end emitting structural, further by the preparation antireflection layer, greatly improved the luminous efficiency of device; Embodiment of the invention organic electroluminescence device preparation method, simple to operate, with low cost, be very suitable for suitability for industrialized production.
Below in conjunction with specific embodiment above-mentioned organic electroluminescence device preparation method is described in detail.
Embodiment one
The embodiment of the invention one organic electroluminescence device preparation method comprises the steps:
Be that 5 millimeters, thickness are 4 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 10min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 30nm successively, and material is that antireflection layer, the thickness of ZnS is 20nm, and material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Embodiment two
The embodiment of the invention two organic electroluminescence device preparation methods comprise the steps:
Be that 5 millimeters, thickness are 4 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 13min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 20nm successively, and material is MoO
3Antireflection layer, thickness be 20nm, material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Embodiment three
The embodiment of the invention three organic electroluminescence device preparation methods comprise the steps:
Be that 3 millimeters, thickness are 3 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 15min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 40nm successively, and material is that antireflection layer, the thickness of BCP is 30nm, and material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Embodiment four
The embodiment of the invention four organic electroluminescence device preparation methods comprise the steps:
Be that 10 millimeters, thickness are 8 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 15min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 60nm successively, and material is that antireflection layer, the thickness of m-MTDATA is 10nm, and material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Embodiment five
The embodiment of the invention five organic electroluminescence device preparation methods comprise the steps:
Be that 5 millimeters, thickness are 4 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 15min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 80nm successively, and material is Alq
3Antireflection layer, thickness be 10nm, material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Embodiment six
The embodiment of the invention six organic electroluminescence device preparation methods comprise the steps:
Be that 5 millimeters, thickness are 4 millimeters hemisphere substrate of glass with internal diameter, use successively each ultrasonic cleaning 12min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 50nm successively, and material is TeO
2Antireflection layer, thickness be 20nm, material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
Comparative Examples
Be 4 millimeters planar shaped substrate of glass with thickness, use successively each ultrasonic cleaning 12min such as pure water, acetone, ethanol;
Cleaned substrate of glass is put into the metallic cavity of vacuum coating equipment, and evaporation thickness is 20nm, and material is the negative electrode of Ag;
Then evaporation there is the hemisphere substrate of glass of negative electrode to put into the organic vacuum cavity, evaporation thickness is 40nm successively, material is 10nm for electron transfer layer, the thickness of (Bphen:Cs) mixture, and material is that hole blocking layer, the thickness of Bphen is 40nm, and material is TCTA:Ir (ppy)
3Luminescent layer, thickness be 40nm, material is the hole transmission layer of m-MTDATA:F4-TCNQ;
Then evaporation is had the substrate of glass of hole transmission layer to move into metallic cavity, continuing evaporation thickness is 150nm, and material is the anode of Al, obtains organic electroluminescence device.
See also Fig. 3, Fig. 3 shows the organic electroluminescence device brightness of the embodiment of the invention one and Comparative Examples-voltage curve comparison diagram, as can be drawn from Figure 3, the organic electroluminescence device of embodiment one is more much higher than the luminous efficiency of the organic electroluminescence device of Comparative Examples.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. organic electroluminescence device, it is characterized in that, comprise the anode layer, organic function layer, cathode layer and the glass-based bottom that stack gradually, described glass-based bottom is spheric, described anode layer, organic function layer, cathode layer and substrate of glass are arranged in order along described sphere radial direction, it is characterized in that, also comprise antireflection layer, described antireflection layer is fitted between described cathode layer and the glass-based bottom.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, described organic function layer comprises hole transmission layer, luminescent layer, hole blocking layer and electron transfer layer, and described hole transmission layer, luminescent layer, hole blocking layer and electron transfer layer are arranged in order along described glass-based bottom sphere radial direction.
3. organic electroluminescence device as claimed in claim 1 is characterized in that, the internal diameter of described glass-based bottom is 2 millimeters～10 millimeters.
4. organic electroluminescence device as claimed in claim 1 is characterized in that, the thickness of described glass-based bottom is 3 millimeters～8 millimeters.
5. organic electroluminescence device as claimed in claim 1 is characterized in that, the thickness of described antireflection layer is 20 nanometers～80 nanometers.
6. organic electroluminescence device as claimed in claim 1, it is characterized in that, the material of described antireflection layer is tellurium dioxide, zinc selenide, zinc sulphide, molybdenum trioxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, oxine aluminium or 4,4 ', 4 " three (3-aminomethyl phenyl aniline) triphenylamines.
7. organic electroluminescence device as claimed in claim 1 is characterized in that, the thickness of described cathode layer is 10 nanometers～30 nanometers.
8. the preparation method of organic electroluminescence device as claimed in claim 1 comprises the steps:
Get the substrate of glass of a spheric, described substrate of glass is carried out clean;
Form antireflection layer by vacuum evaporation at the substrate of glass inner surface of described spheric;
Form cathode layer by vacuum evaporation at the inner surface of described antireflection layer;
Form organic function layer by vacuum evaporation at the inner surface of described cathode layer;
Form anode layer by vacuum evaporation at the inner surface of described organic function layer, obtain organic electroluminescence device.
9. organic electroluminescence device preparation method as claimed in claim 8 is characterized in that, the thickness of described antireflection layer is 20 nanometers～80 nanometers.
10. organic electroluminescence device preparation method as claimed in claim 9, it is characterized in that, the material of described antireflection layer is tellurium dioxide, zinc selenide, zinc sulphide, molybdenum trioxide, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, oxine aluminium or 4,4 ', 4 " three (3-aminomethyl phenyl aniline) triphenylamines.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104183708A (en) * | 2013-05-21 | 2014-12-03 | 海洋王照明科技股份有限公司 | Organic light emission device and manufacturing method thereof |
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