CN103078008A - Preparation method of back side point contact of crystalline silicon - Google Patents
Preparation method of back side point contact of crystalline silicon Download PDFInfo
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- CN103078008A CN103078008A CN2013100068762A CN201310006876A CN103078008A CN 103078008 A CN103078008 A CN 103078008A CN 2013100068762 A CN2013100068762 A CN 2013100068762A CN 201310006876 A CN201310006876 A CN 201310006876A CN 103078008 A CN103078008 A CN 103078008A
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Abstract
The invention discloses a preparation method of the back side point contact of crystalline silicon. The preparation method comprises the following steps that 1, the monocrystalline silicon wafer surface is subjected to damaged layer removal, and in addition, the textured velvet structure is formed; 2, a velvet silicon wafer is inserted into a quartz boat for diffusion to form PN junctions, and a square resistor is formed at the front side of the silicon wafer; 3, the PN junctions at the periphery and the back side of the silicon wafer are removed, and meanwhile, HF (hydrogen fluoride) is adopted for carrying out roughness removal diffusion to form phosphorosilicate glass; 4, silicon nitride passivation antireflection coatings are respectively deposited at the front and back sides of the silicon wafer by a microwave method plasma chemical vapor deposition method, and in addition, points for point contact are preserved on the back side; and 5, a screen printing technology is adopted for sequentially printing a front side electrode, a back electric field and a back electrode of a battery, the back electrode is printed with silver paste, the back electric field is printed with aluminum paste, the front side electrode is printed with sliver paste, and in addition, good ohmic contact is formed through sintering. The preparation method has the advantages that silicon nitride films are plated on the front side and the back side of the silicon wafer, meanwhile, the points for point contact are preserved on the silicon nitride layer at the back side, the process is simple, and the manufacture cost is reduced.
Description
Technical field
The invention belongs to the manufacture of solar cells manufacture technology field, relate in particular to a kind of preparation method of crystalline silicon back side point contact.
Background technology
The back side point contact of crystalline silicon mainly is to plate overleaf silicon nitride, because hydrogen reaches good passivating back effect in the silicon nitride, but owing to stopping of silicon nitride, the aluminium of back of the body electric field can not finely contact with silicon chip and form alloy, so open the window of some points in will silicon nitride film layer overleaf, the aluminium back surface field is contacted with silicon chip form alloy.Because the effect of the passivation of back side silicon nitride and large aluminium back surface field so it is corresponding significantly to promote the long wave of battery, promotes battery open circuit voltage, short circuit current, finally promote the conversion efficiency of battery.
For a variety of methods of the back side point of crystalline silicon contact: twice plated film laser backside windowed, printed corrosive slurry and window etc.Traditional back side point contact has two kinds:
1, in PECVD to silicon chip tow sides deposited silicon nitride, silicon nitride layer is overleaf left the window of a lot of contact needs by the mode of laser drilling.But because twice PECVD cvd nitride silicon technology be cumbersome, cost compare is high, and the laser high-octane laser of windowing is also larger to the damage of silicon chip in addition, need to carry out annealing process reparation damage.
2, printing corrosive slurry fenestration: (1) is cleaned, the alkali cleaning silicon chip, with the greasy dirt of silicon chip surface and the matte of metal impurities removal and formation inverted pyramid structure, (2) High temperature diffusion forms PN junction, reach required square resistance (3) wet etching and remove the PN junction at edge and the back side, remove the phosphorosilicate glass (4) that diffuses to form with HF acid in addition and adopt the PECVD deposited silicon nitride at front side of silicon wafer, (5) adopt PECVD deposited silicon nitride (6) to adopt the mode of silk screen printing that corrosive slurry is printed off overleaf a lot of contact points and adopts hyperthermia drying at the silicon chip reverse side, (7) adopt ultrasonic cleaning that residual corrosive slurry is cleaned up, (8) adopt screen printing technique to battery back electric field, front electrode prints successively.
Adopting above first method is that speed of production is very fast, but operation is very complicated, and energy consumption is very large, and laser can produce certain damage to silicon chip, and battery conversion efficiency is had certain impact; Adopt second method smaller on the impact of silicon chip, but operation is many, technique is relatively complicated, and energy consumption is larger, and speed of production is slow.
Summary of the invention
The preparation method that technical problem to be solved by this invention just provides a kind of crystalline silicon back side point contact simplifies technique, reduces cost, reduces energy consumption, promotes conversion efficiency.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of preparation method of crystalline silicon back side point contact is characterized in that comprising the steps:
1) provides the monocrystalline silicon piece of used for solar batteries, monocrystalline silicon sheet surface is removed the damage layer and formed the texturing suede structure;
2) silicon chip that making herbs into wool is good inserts in the quartz boat, diffuses to form PN junction in 850-900 ℃, forms square resistance 60-70ohm/ in the front of silicon chip;
3) adopt wet method chain type etching to remove around the silicon chip and the PN junction at the back side, reach the isolation of front and rear surfaces PN junction, adopt simultaneously HF to remove slightly to diffuse to form phosphorosilicate glass;
4) adopt the method for the plasma activated chemical vapour deposition of microwave method to deposit one deck silicon nitride passivation antireflective film at the silicon chip tow sides, and reserve overleaf the point of a contact;
5) the employing screen printing technique prints successively to battery back electrode, back of the body electric field, front electrode, back electrode printed silver slurry, and back of the body electric field printing aluminium paste, the front electrode printed silver is starched, and forms good ohmic contact by sintering.
Preferably, monocrystalline silicon sheet surface is removed the damage layer and is formed the texturing suede structure and comprises the steps: monocrystalline silicon piece is carried out prerinse, adopting cleaning monocrystalline silicon liquid to carry out ultrasonic cleaning cleans up the greasy dirt of silicon chip surface, then silicon chip is positioned in 78-80 ℃ the mixing Woolen-making liquid of 1.5% NaOH and IPA5% and carries out the Surface Texture metallization processes, form the pyramid shape suede structure of 1-3 μ m at monocrystalline silicon sheet surface, increase the surface area of silicon chip, increase the short circuit current of battery.
Preferably, diffuse to form PN junction and comprise that step is as follows: the silicon chip silicon chip biplate that making herbs into wool is good inserts quartz boat, at 850-900 ℃ POCL
3And O
2Atmosphere in spread, the front square resistance is controlled at 60-70ohm/.
Preferably, adopt plasma etching the N layer around the silicon chip to be removed to draw together step as follows: will spread the silicon chip of getting well and in plasma, pass into CF
4And O
2Carry out etching, the PN junction of silicon chip edge is removed, adopt simultaneously HF that the phosphorosilicate glass that diffuses to form is removed.
Preferably, adopt the method for plasma activated chemical vapour deposition of microwave method at silicon chip tow sides deposition one deck silicon nitride passivation antireflective film, and the point of reserving overleaf a contact comprises that step is as follows: the mode of using plasma glow discharge is carried out the deposited silicon nitride passivated reflection reducing membrane under 400-450 ℃ of temperature in the atmosphere of silane and ammonia; On carbon carbon frame, ammonia and silane can reach by the space back side of silicon chip, tow sides at silicon chip can both form plasma uniformly, can can both the cvd nitride silicon thin film at the positive and negative of silicon chip, reverse side at silicon chip is close to silicon chip owing to baffle plate, the place that baffle part is blocked silicon chip back side does not plate silicon nitride, so just do not plated silicon nitride at the back side of silicon chip by the point that baffle plate blocks, and all plated silicon nitride in the place of noncontact point, reached the passivation of the required back side of back side point contact silicon nitride.In this step carbon carbon frame intermediate sizes is amplified, the gap of silicon chip and carbon carbon frame is become greatly, gas can reach by the gap between silicon chip and the frame back side of silicon chip, can both deposit to silicon nitride film at the positive and negative of silicon chip.
Preferably, form good ohmic contact by sintering and comprise that step is as follows: adopt silk screen printing back silver electrode, under 200-300 ℃ temperature, dry, and then silk screen printing back electric field aluminum pulp, under 200-300 ℃ temperature, dry, then the silk screen printing front side silver paste 200-350 ℃ of lower oven dry, carries out sintering and forms ohmic contact under the left back atmosphere passing into CDA under 500-900 ℃ the atmosphere.
The invention provides a kind of method of rear surface of solar cell point contact, in microwave method PECVD with the perforate of carbon carbon frame, make the positive and negative at silicon chip all form uniform plasma, covering a baffle plate at the back side of silicon chip blocks the point that back side silicon chip needs to reserve, can disposablely all plate silicon nitride film at the silicon chip positive and negative like this, while silicon nitride layer is overleaf reserved a point that needs the some contact.All plate the point that silicon nitride is also reserved a contact overleaf owing to disposable at the silicon chip tow sides, like this omitted the operation of positive and negative twice plated film, the laser drilling of back side needs battle or the operation that corrosive slurry is windowed have been omitted, because the passivation of back side silicon nitride and large aluminium back surface field effect, can significantly promote solar cell open circuit voltage, short circuit current and conversion efficiency, because technique is relatively simple, has reduced the impact on silicon chip, and reduced manufacturing cost in addition.
Embodiment
Concrete technology flow process of the present invention is as follows:
1. surperficial matte
Monocrystalline silicon piece is carried out prerinse, adopting cleaning monocrystalline silicon liquid to carry out ultrasonic cleaning cleans up the greasy dirt of silicon chip surface, then silicon chip is positioned in 80 ℃ the Woolen-making liquid of the NaOH of 1.5% concentration and IPA5% concentration and carries out the Surface Texture metallization processes, form the pyramid shape suede structure of 3-5 μ m at monocrystalline silicon sheet surface, increase the surface area of silicon chip, increase the short circuit current of battery.
2. diffuse to form PN junction
The silicon chip monolithic that making herbs into wool is good inserts quartz boat, at 850-900 ℃ POCL
3And O
2Atmosphere in spread, form PN junction, the front square resistance is controlled at 60-70ohm/.
3. adopt wet etching that the N layer around the silicon chip is removed
The front side of silicon wafer that diffusion is good carries out wet etching with nitration mixture up on the equipment of chain type wet-method etching, the edge of silicon chip and the PN junction at the back side are removed, and with HF the phosphorosilicate glass that diffuses to form is removed simultaneously.
4.PECVD deposited silicon nitride
Silicon chip is put into direct-type PECVD cavity, and the atmosphere using plasma glow discharge of ammonia, silane is at 450 ℃ of deposit silicon nitrides again, and the thickness of silicon nitride film is 78-85nm, and refractive index is 2.0-2.1.
5. silk screen printing, sintering form ohmic contact
Adopt silk screen printing back silver electrode, under 200-300 ℃ temperature, dry, and then silk screen printing back electric field aluminum pulp, under 200-300 ℃ temperature, dry, follow the silk screen printing front side silver paste, 200-350 ℃ of lower oven dry, carry out sintering under the left back atmosphere passing into CDA under 500-900 ℃ the atmosphere and form ohmic contact.
In sum, preparation method's following points of a kind of crystalline silicon back side point contact provided by the invention: 1, no longer adopt twice plated film to plate silicon nitride film at the silicon chip positive and negative, technique is simple, and energy consumption is lower.2, point the reserving together in plated film of contact reserved at the back side of the present invention, avoided the impact of laser on silicon chip, and technique is simple, and be less on the silicon chip impact.3, the present invention does not increase any equipment, and cost compare is low.4, technique of the present invention is simple, speed of production is fast, realizes easily industrialization.
Claims (6)
1. the preparation method of a crystalline silicon back side point contact is characterized in that comprising the steps:
1) provides the monocrystalline silicon piece of used for solar batteries, monocrystalline silicon sheet surface is removed the damage layer and formed the texturing suede structure;
2) silicon chip that making herbs into wool is good inserts in the quartz boat, diffuses to form PN junction in 850-900 ℃, forms square resistance 60-70ohm/ in the front of silicon chip;
3) adopt wet method chain type etching to remove around the silicon chip and the PN junction at the back side, reach the isolation of front and rear surfaces PN junction, adopt simultaneously HF to remove slightly to diffuse to form phosphorosilicate glass;
4) adopt the method for the plasma activated chemical vapour deposition of microwave method to deposit one deck silicon nitride passivation antireflective film at the silicon chip tow sides, and reserve overleaf the point of a contact;
5) the employing screen printing technique prints successively to battery back electrode, back of the body electric field, front electrode, back electrode printed silver slurry, and back of the body electric field printing aluminium paste, the front electrode printed silver is starched, and forms good ohmic contact by sintering.
2. the preparation method of a kind of crystalline silicon back side point contact according to claim 1, it is characterized in that: monocrystalline silicon sheet surface is removed the damage layer and is formed the texturing suede structure and comprises the steps: monocrystalline silicon piece is carried out prerinse, adopting cleaning monocrystalline silicon liquid to carry out ultrasonic cleaning cleans up the greasy dirt of silicon chip surface, then silicon chip is positioned in 78-80 ℃ the mixing Woolen-making liquid of 1.5% NaOH and IPA5% and carries out the Surface Texture metallization processes, form the pyramid shape suede structure of 1-3 μ m at monocrystalline silicon sheet surface, increase the surface area of silicon chip, increase the short circuit current of battery.
3. the preparation method of a kind of crystalline silicon back side point contact according to claim 1, it is characterized in that: diffuse to form PN junction and comprise that step is as follows: the silicon chip silicon chip biplate that making herbs into wool is good inserts quartz boat, at 850-900 ℃ POCL
3And O
2Atmosphere in spread, the front square resistance is controlled at 60-70ohm/.
4. the preparation method of a kind of crystalline silicon back side point contact according to claim 1 is characterized in that: adopt plasma etching the N layer around the silicon chip to be removed to draw together step as follows: will spread silicon chip well and pass into CF in plasma
4And O
2Carry out etching, the PN junction of silicon chip edge is removed, adopt simultaneously HF that the phosphorosilicate glass that diffuses to form is removed.
5. the preparation method of a kind of crystalline silicon back side point contact according to claim 1, it is characterized in that: adopt the method for plasma activated chemical vapour deposition of microwave method at silicon chip tow sides deposition one deck silicon nitride passivation antireflective film, and the point of reserving overleaf a contact comprises that step is as follows: the mode of using plasma glow discharge is carried out the deposited silicon nitride passivated reflection reducing membrane under 400-450 ℃ of temperature in the atmosphere of silane and ammonia; On carbon carbon frame, ammonia and silane can reach by the space back side of silicon chip, tow sides at silicon chip can both form plasma uniformly, can can both the cvd nitride silicon thin film at the positive and negative of silicon chip, reverse side at silicon chip is close to silicon chip owing to baffle plate, the place that baffle part is blocked silicon chip back side does not plate silicon nitride, so just do not plated silicon nitride at the back side of silicon chip by the point that baffle plate blocks, all plate silicon nitride in other places, reach the passivation of the required back side of back side point contact silicon nitride, and all plated silicon nitride in the place of noncontact point.
6. the preparation method of a kind of crystalline silicon back side point contact according to claim 1, it is characterized in that: form good ohmic contact by sintering and comprise that step is as follows: adopt silk screen printing back silver electrode, under 200-300 ℃ temperature, dry, and then silk screen printing back electric field aluminum pulp, under 200-300 ℃ temperature, dry, then the silk screen printing front side silver paste 200-350 ℃ of lower oven dry, carries out sintering and forms ohmic contact under the left back atmosphere passing into CDA under 500-900 ℃ the atmosphere.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103515486A (en) * | 2013-10-25 | 2014-01-15 | 浙江光普太阳能科技有限公司 | Method for preparing backside point contact solar battery through plate type PECVD |
| CN104241446A (en) * | 2014-08-29 | 2014-12-24 | 晶澳（扬州）太阳能科技有限公司 | Back electrode structure of N-type crystalline silicon solar cell and manufacturing method thereof |
| CN105702750A (en) * | 2014-11-28 | 2016-06-22 | 润峰电力有限公司 | Laser cladding welding method for full-aluminum back field solar cell back pole |
| CN109545908A (en) * | 2019-01-14 | 2019-03-29 | 浙江晶科能源有限公司 | A kind of solar cell inactivating mold and the equipment of solar battery production |
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Patent Citations (5)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103515486A (en) * | 2013-10-25 | 2014-01-15 | 浙江光普太阳能科技有限公司 | Method for preparing backside point contact solar battery through plate type PECVD |
| CN104241446A (en) * | 2014-08-29 | 2014-12-24 | 晶澳（扬州）太阳能科技有限公司 | Back electrode structure of N-type crystalline silicon solar cell and manufacturing method thereof |
| CN105702750A (en) * | 2014-11-28 | 2016-06-22 | 润峰电力有限公司 | Laser cladding welding method for full-aluminum back field solar cell back pole |
| CN109545908A (en) * | 2019-01-14 | 2019-03-29 | 浙江晶科能源有限公司 | A kind of solar cell inactivating mold and the equipment of solar battery production |
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| CN103078008B (en) | 2015-09-02 |
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