CN103077923A - 一种可避免空洞的电镀铜的方法 - Google Patents
一种可避免空洞的电镀铜的方法 Download PDFInfo
- Publication number
- CN103077923A CN103077923A CN2013100118494A CN201310011849A CN103077923A CN 103077923 A CN103077923 A CN 103077923A CN 2013100118494 A CN2013100118494 A CN 2013100118494A CN 201310011849 A CN201310011849 A CN 201310011849A CN 103077923 A CN103077923 A CN 103077923A
- Authority
- CN
- China
- Prior art keywords
- filling
- copper
- wafer
- seconds
- rotating speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 86
- 239000010949 copper Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000009713 electroplating Methods 0.000 title abstract description 8
- 238000005429 filling process Methods 0.000 claims abstract description 32
- 238000007747 plating Methods 0.000 claims description 33
- 239000003112 inhibitor Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000000654 additive Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000002028 premature Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- -1 polydithio-dipropyl Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
浓度(mol/L) | |
加速剂 | 1~3 |
抑制剂 | 5~10 |
平坦剂 | 3~5 |
浓度(mol/L) | |
加速剂 | 4~6 |
抑制剂 | 3~9 |
平坦剂 | 3~5 |
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310011849.4A CN103077923B (zh) | 2013-01-14 | 2013-01-14 | 一种可避免空洞的电镀铜的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310011849.4A CN103077923B (zh) | 2013-01-14 | 2013-01-14 | 一种可避免空洞的电镀铜的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103077923A true CN103077923A (zh) | 2013-05-01 |
CN103077923B CN103077923B (zh) | 2015-06-17 |
Family
ID=48154413
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310011849.4A Active CN103077923B (zh) | 2013-01-14 | 2013-01-14 | 一种可避免空洞的电镀铜的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103077923B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104120473A (zh) * | 2013-04-24 | 2014-10-29 | 中芯国际集成电路制造(上海)有限公司 | 电镀铜的方法 |
CN105040059A (zh) * | 2015-06-30 | 2015-11-11 | 苏州华日金菱机械有限公司 | 一种采用晶圆设备电镀铜的方法 |
CN107502935A (zh) * | 2017-07-26 | 2017-12-22 | 武汉新芯集成电路制造有限公司 | 一种电镀铜的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946065B1 (en) * | 1998-10-26 | 2005-09-20 | Novellus Systems, Inc. | Process for electroplating metal into microscopic recessed features |
CN1685086A (zh) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | 电抛光和电镀方法 |
CN101364542A (zh) * | 2007-08-09 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件中铜的电镀方法 |
CN101740481A (zh) * | 2008-11-18 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件中互连线形成方法 |
CN101871110A (zh) * | 2009-04-24 | 2010-10-27 | 中芯国际集成电路制造(上海)有限公司 | 电镀铜方法 |
-
2013
- 2013-01-14 CN CN201310011849.4A patent/CN103077923B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946065B1 (en) * | 1998-10-26 | 2005-09-20 | Novellus Systems, Inc. | Process for electroplating metal into microscopic recessed features |
CN1685086A (zh) * | 2002-04-12 | 2005-10-19 | Acm研究公司 | 电抛光和电镀方法 |
CN101364542A (zh) * | 2007-08-09 | 2009-02-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件中铜的电镀方法 |
CN101740481A (zh) * | 2008-11-18 | 2010-06-16 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件中互连线形成方法 |
CN101871110A (zh) * | 2009-04-24 | 2010-10-27 | 中芯国际集成电路制造(上海)有限公司 | 电镀铜方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104120473A (zh) * | 2013-04-24 | 2014-10-29 | 中芯国际集成电路制造(上海)有限公司 | 电镀铜的方法 |
CN104120473B (zh) * | 2013-04-24 | 2016-09-07 | 中芯国际集成电路制造(上海)有限公司 | 电镀铜的方法 |
CN105040059A (zh) * | 2015-06-30 | 2015-11-11 | 苏州华日金菱机械有限公司 | 一种采用晶圆设备电镀铜的方法 |
CN107502935A (zh) * | 2017-07-26 | 2017-12-22 | 武汉新芯集成电路制造有限公司 | 一种电镀铜的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103077923B (zh) | 2015-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103397354B (zh) | 一种用于减少硅通孔技术镀铜退火后空洞的添加剂 | |
JP5486821B2 (ja) | 無電解銅めっき方法、及び埋め込み配線の形成方法 | |
CN103077923B (zh) | 一种可避免空洞的电镀铜的方法 | |
CN102543835B (zh) | 开口的填充方法 | |
SG10201402625UA (en) | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features | |
KR20180022700A (ko) | 마이크로일렉트로닉스 내의 상호연결들의 코발트 충진 | |
Kim et al. | Communication—Acceleration of TSV filling by adding thiourea to PEG-PPG-SPS-I− | |
CN101859700A (zh) | 多晶硅淀积工艺 | |
CN103484908B (zh) | Tsv电化学沉积铜方法 | |
CN102610554A (zh) | 一种提高高深宽比浅沟槽隔离填充特性的方法 | |
CN103698372A (zh) | 铜互连电镀填充效果的评价方法 | |
Hong et al. | High speed Cu-Ni filling into TSV for 3-Dimensional Si chip stacking | |
CN102683184B (zh) | 一种离子注入阻挡层的制作方法 | |
CN108984805B (zh) | 一种改善cmp缺陷的优化方法及*** | |
CN102097363A (zh) | 金属互连方法 | |
KR101713686B1 (ko) | 실리콘 관통 비아의 무결함 필링용 평탄제 및 필링방법 | |
CN104120473B (zh) | 电镀铜的方法 | |
CN103426729A (zh) | 提高整合被动器件电感器q值的方法 | |
JP4931196B2 (ja) | 無電解銅めっき浴、無電解銅めっき方法及びulsi銅配線形成方法 | |
CN205900549U (zh) | 一种mosfet | |
CN103367228A (zh) | 一种沟槽隔离方法 | |
CN102154670B (zh) | 电镀铜方法 | |
CN107731733A (zh) | 沟槽外延的填充方法 | |
CN103066095B (zh) | 一种影像传感器及其制造方法 | |
CN104347471A (zh) | 半导体器件的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. Free format text: FORMER OWNER: LU WEI Effective date: 20130712 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 200124 PUDONG NEW AREA, SHANGHAI TO: 430205 WUHAN, HUBEI PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20130712 Address after: 430205 Wuhan Province, East Lake City Development Zone, No., No. four high road, No. 18 Applicant after: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Address before: 200124, room 9, No. 905, Lane 301, Haiyang Road, Shanghai, Pudong New Area Applicant before: Lu Wei |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee after: Wuhan Xinxin Integrated Circuit Co.,Ltd. Country or region after: China Address before: 430205 No.18, Gaoxin 4th Road, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan Xinxin Semiconductor Manufacturing Co.,Ltd. Country or region before: China |
|
CP03 | Change of name, title or address |