CN103076500B - Conductivity sensor in cofiring structure and manufacturing method thereof - Google Patents
Conductivity sensor in cofiring structure and manufacturing method thereof Download PDFInfo
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- CN103076500B CN103076500B CN201210589765.4A CN201210589765A CN103076500B CN 103076500 B CN103076500 B CN 103076500B CN 201210589765 A CN201210589765 A CN 201210589765A CN 103076500 B CN103076500 B CN 103076500B
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Abstract
The invention discloses a conductivity sensor in a cofiring structure and a manufacturing method of the conductivity sensor, and relates to the conductivity sensor and the manufacturing method thereof. The invention aims to solve the problem that the current conductivity sensor is difficult in manufacturing method and complex in structure. An upper polar plate and a lower polar plate are fixedly arranged on the upper and lower surfaces of a substrate between the polar plates in a mirror symmetry manner to form a U-shaped structure. The upper polar plate consists of five polar plate substrates which are sequentially overlapped from top to bottom. N electrodes of the first polar plate substrate are respectively connected with N leads of the third polar plate substrate through via holes. The N leads are respectively connected with N output electrodes of the fifth polar plate substrate through via holes. The manufacturing method comprises the steps of: respectively manufacturing M upper electrodes and M lower electrodes by ten substrates; carrying out counterpoint overlapping, isostatic pressing combination and ceramic cutting for five substrates consisting of M upper electrodes, M substrates among the polar plates and five substrates consisting of M lower electrodes to separate a plurality of sensors which are integrated; and finally, cofiring and forming the sensor for measuring the conductivity of liquids.
Description
Technical field
The present invention relates to a kind of conductivity sensor, particularly a kind of conductivity sensor and preparation method thereof of co-sintering structure.
Background technology
Conductivity sensor (comprising four electrode conductivity sensors) and co-sintering technology are known in the art, and conductivity sensor is for measuring the conductivity (conductibity) of the fluids such as liquid or the diffusion solid that suspends in a liquid.Conductivity sensor is usually for the electrolyte properties and hydrolysis properties etc. of solution, also be used to detect quality, as potable water, industrial process waters etc., be widely used in the life production fields such as electric power, chemical industry, environmental protection, food, semi-conductor industry, ocean research exploitation.Co-sintering technology is easy to realize large-scale production and realize the miniaturization of products being widely used in semiconductor applications owing to having, and this technology includes the processing steps such as curtain coating, punching, serigraphy, lamination, isostatic pressed, cutting, sintering.
The unit of conductivity is Siemens/cm.The measurement of conductivity covers from being less than 1 × 10
-7the ultrapure water of S/cm is to the electrical conductivity of solution of numerical value more than the broad spectrum of the concentrated solution of 1S/cm.
A kind of conductivity measurement technique comprises and contacts solution with conductive electrode, and such as, a kind of conductivity measurement technique that contacts adopts a kind of conductivity sensor having two metal electrodes contacted with solution or remove conductive non-metals electrode.Alternating current (alternating current AC) in addition between electrode, the AC electric current circulated between electrode can determine cell constant of conductometric vessel (specific conductance).Contact-type conductivity sensor is referred to as again electrode type conductivity sensor, and this kind of sensor adopts two, four even seven contact electrodes usually, and these electrodes directly contact with fluid to be measured.Have the electrode type conductivity sensor of four electrodes, four electrodes are exposed in detected solution, and wherein pair of electrodes applies a constant electric current, measures the change in voltage between other pair of electrodes, according to electric current and magnitude of voltage, calculate the conductivity value of liquid.
Four traditional electrode structures are that conductive dielectric materials (stainless steel, titanium alloy, graphite, gold, platinum, silver etc.) is processed into the right cylinder with certain diameter, be sealed in the non-conductive pedestal such as plastics, pottery, thus make the contact-type conductivity sensor with four electrodes.Electrode is exposed in detected solution by one end of pedestal.Fig. 1 is four electrode conductivity sensor schematic diagram of traditional structure.Sensor 14 is connected to signal processing system 18.The surface 16 of contact rod 15 is exposed to detected solution by the surface 17 of sensor 14.Fig. 2 is the upward view of sensor 14, the surface 16 of display contact rod 15.
In recent years, by using semiconductor planar technology to manufacture contact-type conductivity sensor, by semiconductor processing techniques by electrode deposition on passive silicon chip, the conductivity sensor size that this technology manufactures is little, is suitable for extensive manufacture, low cost of manufacture, but manufacture method is difficult, complex structure.
Summary of the invention
The object of the invention is to solve current conductivity sensor manufacture method difficulty, baroque problem, the invention provides conductivity sensor of a kind of co-sintering structure and preparation method thereof.
The conductivity sensor of co-sintering structure of the present invention, it comprises top crown, substrate between bottom crown and pole plate; Described top crown is identical with bottom crown structure, and top crown and bottom crown specular are fixed on upper surface and lower surface formation " recessed " character form structure of substrate between pole plate; One end that top crown is connected with substrate between bottom crown with pole plate is stiff end, and the other end is free end;
Bottom crown 1 is made up of five pole plate substrates; Described five pole plate substrates overlap is placed, and is followed successively by the first pole plate substrate, the second pole plate substrate, tri-electrode substrate, quadripolar plate substrate and the 5th pole plate substrate from top to bottom;
The upper surface of the free end of the first pole plate substrate is provided with N number of electrode, and the upper surface of tri-electrode substrate is provided with N root lead-in wire, and the lower surface of the 5th pole plate substrate arranges N number of output electrode,
First pole plate substrate, the second pole plate substrate, tri-electrode substrate, quadripolar plate substrate and the 5th pole plate substrate arrange N number of via hole respectively, described via hole be the upper surface of respective substrate to the penetrating hole of lower surface, be provided with conducting metal in described penetrating hole;
Described N number of electrode to go between with the on-chip N root of tri-electrode respectively by the on-chip N number of via hole of the first pole plate and the on-chip N number of via hole of the second pole plate and is connected, and tri-electrode on-chip N root lead-in wire is connected with N number of output electrode of the 5th pole plate substrate lower surface with N number of via hole of the 5th pole plate substrate respectively by the on-chip N number of via hole of tri-electrode, the on-chip N number of via hole of quadripolar plate.
The method for making of the sensor, it comprises the steps:
Step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate, the position that second substrate is corresponding with the individual first pole plate substrate of M makes M the second pole plate substrate, the position that 3rd substrate is corresponding with the individual second pole plate substrate of M makes M tri-electrode substrate, the position that 4th substrate is corresponding with the individual tri-electrode substrate of M makes M quadripolar plate substrate, the position that 5th substrate is corresponding with the individual quadripolar plate substrate of M makes M the 5th pole plate substrate, and the making step of described top crown is:
Step 1: utilize the hole-punching method in co-sintering method to make the via hole of five pole plate substrates respectively on five substrates;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to the described via hole in step one;
Step 3: utilize method for printing screen in co-sintering method to make N number of electrode of the first pole plate substrate at the upper surface of the first substrate, N number of electrode connects to the corresponding via hole of described first pole plate substrate respectively;
Step 4: utilize method for printing screen in co-sintering method to make the N root lead-in wire of tri-electrode substrate at the upper surface of the 3rd substrate, N root lead-in wire connects to the corresponding via hole of described tri-electrode substrate respectively;
Step 5: utilize method for printing screen in co-sintering method to make N number of output electrode of the 5th pole plate substrate at the lower surface of the 5th substrate, N number of output electrode connects to the corresponding via hole of described 5th pole plate substrate respectively;
Step 2: utilize other five substrates to make multiple bottom crown, making principles and the making step of bottom crown and the identical of step one;
Step 3: five pole plate substrates step one being made substrate and step 2 making bottom crown between five substrates of top crown, an existing M pole plate carry out contraposition lamination by high precision contraposition lamination techniques, the multiple sensor of shape all-in-one-piece; Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: by multiple sensors of described one, multiple independently sensor is separated into by ceramic cutting technique to the substrate after step 4 combines, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
Described top crown also comprises detector unit, 5th pole plate substrate also comprises two temperature detection output electrodes, described detector unit is arranged on the upper surface of tri-electrode substrate, the two ends of described detector unit are connected with two temperature detection output electrodes of the 5th pole plate substrate with the on-chip via hole of the 5th pole plate respectively by the on-chip via hole of tri-electrode, the on-chip via hole of quadripolar plate
The method for making of the sensor, it comprises the steps:
Step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate, the position that second substrate is corresponding with the individual first pole plate substrate of M makes M the second pole plate substrate, the position that 3rd substrate is corresponding with the individual second pole plate substrate of M makes M tri-electrode substrate, the position that 4th substrate is corresponding with the individual tri-electrode substrate of M makes M quadripolar plate substrate, the position that 5th substrate is corresponding with the individual quadripolar plate substrate of M makes M the 5th pole plate substrate, and detailed process is:
Step 1: utilize the hole-punching method in co-sintering method to make via hole respectively on each substrate;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to each via hole made in step one;
Step 3: utilize the method for printing screen in co-sintering method to make N number of electrode at the upper surface of first on-chip each first pole plate substrate, N number of electrode connects to the corresponding via hole of described first pole plate substrate respectively;
Step 4: utilize the method for printing screen in co-sintering method to make N root lead-in wire at the upper surface of the 3rd on-chip each tri-electrode substrate, N root lead-in wire connects to the corresponding via hole of described tri-electrode substrate respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit at the upper surface of the 3rd on-chip each tri-electrode substrate, two ends of detector unit connect to the corresponding via hole of described tri-electrode substrate respectively;
Step 6: utilize the method for printing screen in co-sintering method to make N number of output electrode at the lower surface of each 5th pole plate substrate of the 5th substrate, N number of output electrode connects to the corresponding via hole of described 5th pole plate substrate respectively;
Step 2: utilize other five substrates, repeats step one and makes M bottom crown;
Step 3: between five substrates of top crown step one made, a M pole plate, five pole plate substrates of the bottom crown that substrate and step 2 make carry out contraposition lamination by high precision contraposition lamination techniques, the multiple sensor of shape all-in-one-piece;
Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: by multiple sensors of described one, multiple independently sensor is separated into by ceramic cutting technique to the substrate after step 4 combines, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
The invention has the advantages that, the conductivity structure of conductivity sensor of the present invention realizes miniaturization, and can be made the conductivity sensor of different measuring scope by adjustment electrode size and substrate layer numeral system.The manufacturing technology of the method for making of conductivity sensor of the present invention is simple, be easy to realize batch production, and stability is improved, and easier and other sensor realizes Integration Design and making.
Accompanying drawing explanation
Fig. 1 is four electrode conductivity sensors of traditional structure and the schematic diagram of detection system thereof.
Fig. 2 is the upward view of four electrode conductivity sensors in Fig. 1.
Fig. 3 is the perspective view of the conductivity sensor of co-sintering structure of the present invention.
Fig. 4 is the textural association schematic diagram of the conductivity sensor of co-sintering structure of the present invention.Fig. 5 is the textural association schematic diagram of the bottom crown of the conductivity sensor of co-sintering structure of the present invention.
Fig. 6 is the sectional view of Fig. 3.
Fig. 7 is the vertical view of the first pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Fig. 8 is the B-B cut-open view of Fig. 7.
Fig. 9 is the vertical view of the second pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 10 is the C-C cut-open view of Fig. 9.
Figure 11 is the vertical view of the tri-electrode substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 12 is the D-D cut-open view of Figure 11.
Figure 13 is the vertical view of the quadripolar plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 14 is the E-E cut-open view of Figure 13.Figure 15 is the upward view of the 5th pole plate substrate of the conductivity sensor of co-sintering structure of the present invention.
Figure 16 is the F-F cut-open view of Figure 15.
Embodiment
Embodiment one: composition graphs 1 to Figure 16 illustrates present embodiment, the conductivity sensor of the co-sintering structure described in present embodiment, it comprises top crown, substrate 3 between bottom crown 1 and pole plate; Described top crown is identical with bottom crown 1 structure, and top crown and bottom crown 1 specular are fixed on upper surface and lower surface formation " recessed " character form structure of substrate 3 between pole plate; One end that top crown and bottom crown 1 are connected with substrate between pole plate 3 is stiff end, and the other end is free end;
Bottom crown 1 is made up of five pole plate substrates; Described five pole plate substrates overlap is placed, and is followed successively by the first pole plate substrate 1-1-1, the second pole plate substrate 1-1-2, tri-electrode substrate 1-1-3, quadripolar plate substrate 1-1-4 and the 5th pole plate substrate 1-1-5 from top to bottom;
The upper surface of the free end of the first pole plate substrate 1-1-1 is provided with N number of electrode 1-2, and the upper surface of tri-electrode substrate 1-1-3 is provided with N root lead-in wire 1-3, and the lower surface of the 5th pole plate substrate 1-1-5 arranges N number of output electrode 1-4,
First pole plate substrate 1-1-1, the second pole plate substrate 1-1-2, tri-electrode substrate 1-1-3, quadripolar plate substrate 1-1-4 and the 5th pole plate substrate 1-1-5 arrange N number of via hole respectively, described via hole be the upper surface of respective substrate to the penetrating hole of lower surface, be provided with conducting metal in described penetrating hole;
Described N number of electrode 1-2 is connected respectively by the N number of via hole on the first pole plate substrate 1-1-1 and the N number of via hole on the second pole plate substrate 1-1-2 and the N root on the tri-electrode substrate 1-1-3 1-3 that goes between, and the N root lead-in wire 1-3 on tri-electrode substrate 1-1-3 is connected with N number of output electrode 1-4 of the 5th pole plate substrate 1-1-5 lower surface with N number of via hole of the 5th pole plate substrate 1-1-5 respectively by the N number of via hole on tri-electrode substrate 1-1-3, the on-chip N number of via hole of quadripolar plate.
Embodiment two: present embodiment limits further the conductivity sensor of the co-sintering structure described in embodiment one, and described second pole plate substrate 1-1-2 and quadripolar plate substrate 1-1-4 is single or multiple lift structure.
Embodiment three: present embodiment limits further the conductivity sensor of the co-sintering structure described in embodiment one, and between pole plate, substrate 3 is single or multiple lift structure.
In actual applications, according to the number of plies of substrate 3 between the performance requirement determination pole plate to described conductivity sensor.
Embodiment four: present embodiment limits further the conductivity sensor of the co-sintering structure described in embodiment one, described N equals 1 or 2 or 3 or 4 or 5.
Embodiment five: present embodiment limits further the conductivity sensor of the co-sintering structure described in embodiment one, bottom crown 1 also comprises detector unit 4, 5th pole plate substrate 1-1-5 also comprises two temperature detection output electrode 1-5, described detector unit 4 is arranged on the upper surface of tri-electrode substrate 1-1-3, the two ends of described detector unit 4 are respectively by the via hole on tri-electrode substrate 1-1-3, via hole on quadripolar plate substrate 1-1-4 is connected with two temperature detection output electrode 1-5 of the via hole on the 5th pole plate substrate 1-1-5 with the 5th pole plate substrate 1-1-5.
Embodiment six: present embodiment is the method for making of the conductivity sensor of co-sintering structure described in embodiment one, and it comprises the steps:
Step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate 1-1-1, the position that second substrate is corresponding with the individual first pole plate substrate 1-1-1 of M makes M the second pole plate substrate 1-1-2, the position that 3rd substrate is corresponding with the individual second pole plate substrate 1-1-2 of M makes M tri-electrode substrate 1-1-3, the position that 4th substrate is corresponding with the individual tri-electrode substrate 1-1-3 of M makes M quadripolar plate substrate 1-1-4, the position that 5th substrate is corresponding with the individual quadripolar plate substrate 1-1-4 of M makes M the 5th pole plate substrate 1-1-5, detailed process is:
Step 1: utilize the hole-punching method in co-sintering method to make via hole respectively on each substrate;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to each via hole made in step one;
Step 3: utilize the method for printing screen in co-sintering method to make N number of electrode 1-2 at the upper surface of first on-chip each first pole plate substrate 1-1-1, N number of electrode 1-2 connects to the corresponding via hole of described first pole plate substrate 1-1-1 respectively;
Step 4: utilize the method for printing screen in co-sintering method to make N root lead-in wire 1-3, N root lead-in wire 1-3 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3 and connect to the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 5: utilize the method for printing screen in co-sintering method to make N number of output electrode 1-4 at the lower surface of each 5th pole plate substrate 1-1-5 of the 5th substrate, N number of output electrode 1-4 connects to the corresponding via hole of described 5th pole plate substrate 1-1-5 respectively;
Step 2: utilize other five substrates, repeats step one and makes M bottom crown 1;
Step 3: between five substrates of top crown step one made, a M pole plate, five pole plate substrates of the bottom crown 1 that substrate 3 and step 2 make carry out contraposition lamination by high precision contraposition lamination techniques, the multiple sensor of shape all-in-one-piece;
Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: multiple sensors of described one are separated into M independently sensor by ceramic cutting technique by the substrate after combining step 4, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
The principle of the contraposition lamination in step 3 is: N number of electrode 1-2 of the first pole plate substrate 1-1-1 1-3 that goes between with the N root on tri-electrode substrate 1-1-3 respectively realizes being electrically connected, described N root lead-in wire 1-3 is connected with N number of output electrode 1-4 of the 5th pole plate substrate 1-1-5 lower surface respectively, and N number of electrode is outside exposed, for liquid comes into contact.
Embodiment seven: present embodiment is the method for making of the conductivity sensor of the co-sintering structure described in embodiment five,
It comprises the steps:
Step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate 1-1-1, the position that second substrate is corresponding with the individual first pole plate substrate 1-1-1 of M makes M the second pole plate substrate 1-1-2, the position that 3rd substrate is corresponding with the individual second pole plate substrate 1-1-2 of M makes M tri-electrode substrate 1-1-3, the position that 4th substrate is corresponding with the individual tri-electrode substrate 1-1-3 of M makes M quadripolar plate substrate 1-1-4, the position that 5th substrate is corresponding with the individual quadripolar plate substrate 1-1-4 of M makes M the 5th pole plate substrate 1-1-5, detailed process is:
Step 1: utilize the hole-punching method in co-sintering method to make via hole respectively on each substrate;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to each via hole made in step one;
Step 3: utilize the method for printing screen in co-sintering method to make N number of electrode 1-2 at the upper surface of first on-chip each first pole plate substrate 1-1-1, N number of electrode 1-2 connects to the corresponding via hole of described first pole plate substrate 1-1-1 respectively;
Step 4: utilize the method for printing screen in co-sintering method to make N root lead-in wire 1-3, N root lead-in wire 1-3 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3 and connect to the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit 4 at the upper surface of the 3rd on-chip each tri-electrode substrate 1-1-3, two ends of detector unit 4 connect to the corresponding via hole of described tri-electrode substrate 1-1-3 respectively;
Step 6: utilize the method for printing screen in co-sintering method to make N number of output electrode 1-4 at the lower surface of each 5th pole plate substrate 1-1-5 of the 5th substrate, N number of output electrode 1-4 connects to the corresponding via hole of described 5th pole plate substrate 1-1-5 respectively;
Step 2: utilize other five substrates, repeats step one and makes M bottom crown 1;
Step 3: between five substrates of top crown step one made, a M pole plate, five pole plate substrates of the bottom crown 1 that substrate 3 and step 2 make carry out contraposition lamination by high precision contraposition lamination techniques, the multiple sensor of shape all-in-one-piece;
Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: multiple sensors of described one are separated into M independently sensor by ceramic cutting technique by the substrate after combining step 4, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
Embodiment eight: present embodiment is the further restriction of the method for making of conductivity sensor to the co-sintering structure described in embodiment six or seven, described substrate utilizes casting method to be made for adopting stupalith or glass material or combination both it.
Embodiment nine: present embodiment is the further restriction of the method for making of conductivity sensor to the co-sintering structure described in embodiment six or seven, described electrode is circular or annular.
Embodiment ten: present embodiment is the further restriction of the method for making of conductivity sensor to the co-sintering structure described in embodiment six or seven, and the described hole-punching method in step one is mechanical punching or laser boring.
Composition graphs 1 to Figure 16 illustrates the conductivity sensor of the co-sintering structure of four electrodes, and described N equals 2,
Fig. 3 is the stereographic map of the conductivity sensor of the co-sintering structure of four electrodes, substrate adopts casting method to make, there is certain thickness, substrate is made up of stupalith, glass material or both compositions, substrate normally non-conductive with inorganic, substrate material comprises zirconia, aluminium oxide, glass or any other suitable material.
Fig. 6 is Fig. 3 cut-open view.Top crown 1 is arranged 4 via holes 6, the electrical connection that via hole is used for electrode 1-2 and lead-in wire 1-3 and goes between 1-3 and output terminal 1-4.
Fig. 7 is the vertical view of the first pole plate substrate 1-1-1.First pole plate substrate 1-1-1 is that the wherein electrode 1-2 of individual layer is patterned, and is produced on the first pole plate substrate 1-1-1 by screen printing technique.Via hole is through hole, machinery or laser drilling is utilized to realize, filled conductive metal material, the whole length of via hole is extended through from the upper surface of the first pole plate substrate 1-1-1 to lower surface, realize the electrical connection between via hole on electrode 1-2 and the first pole plate substrate 1-1-1, this filling can be realized by filling perforation or screen printing technique.
Fig. 9 is the vertical view of the second pole plate substrate 1-1-2.Second pole plate substrate 1-1-2 can be individual layer or multilayer.Wherein via hole is through hole, machinery or laser drilling is utilized to realize, filled conductive conductive metallic material, the whole length of via hole is extended through from the second pole plate substrate 1-1-2 upper surface to lower surface, realize the first pole plate substrate 1-1-1 upper surface via hole and the upper electrical connection gone between 1-3 of tri-electrode substrate 1-1-3 substrate (7), this filling can be realized by filling perforation or screen printing technique.
Figure 11 is the vertical view of tri-electrode substrate 1-1-3.Tri-electrode substrate 1-1-3 is individual layer, and wherein lead-in wire 1-3 and detector unit 4 are patterned, and are produced on tri-electrode substrate 1-1-3 by screen printing technique.Via hole is through hole, machinery or laser drilling is utilized to realize, filled conductive conductive metallic material, the whole length of via hole is extended through from tri-electrode substrate 1-1-3 upper surface to lower surface, realize the electrical connection between lead-in wire 1-3 and the upper via hole of detector unit 4 and quadripolar plate substrate 1-1-4, this filling can be by filling perforation or screen printing technique realization.
Figure 13 is the vertical view of quadripolar plate substrate 1-1-4.Quadripolar plate substrate 1-1-4 can be individual layer or multilayer.Wherein via hole is through hole, the proper technologies such as machinery/laser boring are utilized to realize, filled conductive metal material, the whole length of via hole is extended through from quadripolar plate substrate 1-1-4 outside surface to inside surface, realize the electrical connection between via hole on quadripolar plate substrate 1-1-4 upper surface via hole and the 5th pole plate substrate 1-1-5, this filling can be realized by filling perforation or screen printing technique.
Figure 15 is the upward view of the 5th pole plate substrate 1-1-5.5th pole plate substrate 1-1-5 is individual layer, and wherein output terminal 1-4 is patterned, and is produced on the 5th pole plate substrate 1-1-5 by screen printing technique.Via hole is through hole, machinery or laser drilling is utilized to realize, conductive metallic material, the whole length of via hole is extended through from the 5th pole plate substrate 1-1-5 upper surface to lower surface, realize the electrical connection between via hole on output terminal 1-4 and the 5th pole plate substrate 1-1-5, this filling can be realized by filling perforation or screen printing technique.
Liquid electric conductivity changes with the temperature variation of liquid, and therefore conductivity sensor generally includes temperature sensor to carry out temperature adjustmemt to the conductivity value of test.For the embodiment of the present invention, at top crown or the inner set temperature detecting element 4 of bottom crown 1.Detector unit 4 is made up of any material with resistance characteristic, such as platinum, its resistance value variation with temperature and changing.Adopt the fabrication techniques such as sputtering, serigraphy on tri-electrode substrate 1-1-3, and utilize via hole to realize the electrical connection with output terminal 1-4.
Conductivity sensor in the present invention can embed in suitable pedestal, and is connected with suitable signal processor.Although reference example describes the present invention, can carry out the change in form and details without departing from the spirit and scope of the present invention, comprise and change number of electrodes shape etc., this it will be apparent to those skilled in the art that.
Claims (10)
1. the conductivity sensor of co-sintering structure, is characterized in that, it comprises top crown, substrate (3) between bottom crown (1) and pole plate; Described top crown is identical with bottom crown (1) structure, and top crown and bottom crown (1) specular are fixed on upper surface and lower surface formation " recessed " character form structure of substrate between pole plate (3); One end that top crown is connected with substrate between pole plate (3) with bottom crown (1) is stiff end, and the other end is free end;
Bottom crown (1) is made up of five pole plate substrates; Described five pole plate substrates overlap is placed, and is followed successively by the first pole plate substrate (1-1-1), the second pole plate substrate (1-1-2), tri-electrode substrate (1-1-3), quadripolar plate substrate (1-1-4) and the 5th pole plate substrate (1-1-5) from top to bottom;
The upper surface of the free end of the first pole plate substrate (1-1-1) is provided with N number of electrode (1-2), the upper surface of tri-electrode substrate (1-1-3) is provided with N root lead-in wire (1-3), the lower surface of the 5th pole plate substrate (1-1-5) arranges N number of output electrode (1-4)
First pole plate substrate (1-1-1), the second pole plate substrate (1-1-2), tri-electrode substrate (1-1-3), quadripolar plate substrate (1-1-4) and the 5th pole plate substrate (1-1-5) arrange N number of via hole respectively, described via hole be the upper surface of respective substrate to the penetrating hole of lower surface, be provided with conducting metal in described penetrating hole;
Described N number of electrode (1-2) respectively by the N number of via hole on the first pole plate substrate (1-1-1) and the N number of via hole on the second pole plate substrate (1-1-2) and the N root on tri-electrode substrate (1-1-3) go between (1-3) be connected, N root lead-in wire (1-3) on tri-electrode substrate (1-1-3) is respectively by the N number of via hole on tri-electrode substrate (1-1-3), the on-chip N number of via hole of quadripolar plate is connected with N number of output electrode (1-4) of the 5th pole plate substrate (1-1-5) lower surface with N number of via hole of the 5th pole plate substrate (1-1-5).
2. the conductivity sensor of co-sintering structure according to claim 1, is characterized in that, described second pole plate substrate (1-1-2) and quadripolar plate substrate (1-1-4) are single or multiple lift structure.
3. the conductivity sensor of co-sintering structure according to claim 1, is characterized in that, between pole plate, substrate (3) is single or multiple lift structure.
4. the conductivity sensor of co-sintering structure according to claim 1, is characterized in that, described N equals 1 or 2 or 3 or 4 or 5.
5. the conductivity sensor of co-sintering structure according to claim 1, it is characterized in that, bottom crown (1) also comprises detector unit (4), 5th pole plate substrate (1-1-5) also comprises two temperature detection output electrodes (1-5), described detector unit (4) is arranged on the upper surface of tri-electrode substrate (1-1-3), the two ends of described detector unit (4) are respectively by the via hole on tri-electrode substrate (1-1-3), via hole on quadripolar plate substrate (1-1-4) is connected with two temperature detection output electrodes (1-5) of the 5th pole plate substrate (1-1-5) with the via hole on the 5th pole plate substrate (1-1-5).
6. the method for making of the conductivity sensor of co-sintering structure according to claim 1, it is characterized in that, it comprises the steps: step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate (1-1-1), the position that second substrate is corresponding with the individual first pole plate substrate (1-1-1) of M makes M the second pole plate substrate (1-1-2), the position that 3rd substrate is corresponding with the individual second pole plate substrate (1-1-2) of M makes M tri-electrode substrate (1-1-3), the position that 4th substrate is corresponding with the individual tri-electrode substrate (1-1-3) of M makes M quadripolar plate substrate (1-1-4), the position that 5th substrate is corresponding with the individual quadripolar plate substrate (1-1-4) of M makes M the 5th pole plate substrate (1-1-5), detailed process is:
Step 1: utilize the hole-punching method in co-sintering method to make via hole respectively on each substrate;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to each via hole made in step one;
Step 3: utilize the method for printing screen in co-sintering method to make N number of electrode (1-2) at the upper surface of first on-chip each first pole plate substrate (1-1-1), N number of electrode (1-2) is connected with the corresponding via hole of described first pole plate substrate (1-1-1) respectively;
Step 4: utilize the method for printing screen in co-sintering method to make N root lead-in wire (1-3) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), N root lead-in wire (1-3) is connected with the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 5: utilize the method for printing screen in co-sintering method to make N number of output electrode (1-4) at the lower surface of each 5th pole plate substrate (1-1-5) of the 5th substrate, N number of output electrode (1-4) is connected with the corresponding via hole of described 5th pole plate substrate (1-1-5) respectively;
Step 2: utilize other five substrates, repeats step one and makes M bottom crown;
Step 3: between five substrates of top crown step one made, a M pole plate, five pole plate substrates of the bottom crown that substrate (3) and step 2 make carry out contraposition lamination by contraposition lamination techniques, the multiple sensor of shape all-in-one-piece;
Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: multiple sensors of described one are separated into M independently sensor by ceramic cutting technique by the substrate after combining step 4, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
7. the method for making of the conductivity sensor of co-sintering structure according to claim 5, it is characterized in that, it comprises the steps:
Step one: utilize five substrates to make multiple top crown, making principles is: on the first substrate, make M the first pole plate substrate (1-1-1), the position that second substrate is corresponding with the individual first pole plate substrate (1-1-1) of M makes M the second pole plate substrate (1-1-2), the position that 3rd substrate is corresponding with the individual second pole plate substrate (1-1-2) of M makes M tri-electrode substrate (1-1-3), the position that 4th substrate is corresponding with the individual tri-electrode substrate (1-1-3) of M makes M quadripolar plate substrate (1-1-4), the position that 5th substrate is corresponding with the individual quadripolar plate substrate (1-1-4) of M makes M the 5th pole plate substrate (1-1-5), detailed process is:
Step 1: utilize the hole-punching method in co-sintering method to make via hole respectively on each substrate;
Step 2: utilize the method for printing screen in co-sintering method or filling perforation method to fill out conducting metal to each via hole made in step one;
Step 3: utilize the method for printing screen in co-sintering method to make N number of electrode (1-2) at the upper surface of first on-chip each first pole plate substrate (1-1-1), N number of electrode (1-2) is connected with the corresponding via hole of described first pole plate substrate (1-1-1) respectively;
Step 4: utilize the method for printing screen in co-sintering method to make N root lead-in wire (1-3) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), N root lead-in wire (1-3) is connected with the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 5: utilize thick-film technique or thin-film technique method to make detector unit (4) at the upper surface of the 3rd on-chip each tri-electrode substrate (1-1-3), two ends of detector unit (4) connect to the corresponding via hole of described tri-electrode substrate (1-1-3) respectively;
Step 6: utilize the method for printing screen in co-sintering method to make N number of output electrode (1-4) at the lower surface of each 5th pole plate substrate (1-1-5) of the 5th substrate, N number of output electrode (1-4) is connected with the corresponding via hole of described 5th pole plate substrate (1-1-5) respectively;
Step 2: utilize other five substrates, repeats step one and makes M bottom crown (1);
Step 3: between five substrates of top crown step one made, a M pole plate, five pole plate substrates of the bottom crown (1) that substrate (3) and step 2 make carry out contraposition lamination by contraposition lamination techniques, the multiple sensor of shape all-in-one-piece;
Step 4: the combination realizing between substrate by isostatic pressing technology to the substrate after step 3 contraposition lamination;
Step 5: multiple sensors of described one are separated into M independently sensor by ceramic cutting technique by the substrate after combining step 4, then the sensor after being separated is passed through SINTERING TECHNOLOGY sinter molding.
8. the method for making of the conductivity sensor of the co-sintering structure according to claim 6 or 7, is characterized in that, described substrate utilizes casting method to be made for adopting stupalith or glass material or combination both it.
9. the method for making of the conductivity sensor of the co-sintering structure according to claim 6 or 7, is characterized in that, described electrode is circular or annular.
10. the method for making of the conductivity sensor of the co-sintering structure according to claim 6 or 7, is characterized in that, the described hole-punching method in step one is mechanical punching or laser boring.
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| CN109557151A (en) * | 2019-01-15 | 2019-04-02 | 中国电子科技集团公司第四十九研究所 | The manufacturing method of sensing unit based on ceramic co-fired technique, the electrochemical gas sensor containing the sensing unit and sensing unit |
| CN113495191B (en) * | 2020-04-01 | 2022-10-14 | 中国科学院上海硅酸盐研究所 | Preparation method of seven-electrode conductivity sensor |
| CN113063988B (en) * | 2021-03-19 | 2023-08-11 | 中国电子科技集团公司第四十九研究所 | Double-cell conductivity sensor sharing intermediate electrode plate and preparation method thereof |
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