CN103074680B - Preparation method for hafnium two-dimensional atomic crystal material - Google Patents
Preparation method for hafnium two-dimensional atomic crystal material Download PDFInfo
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Abstract
The invention discloses a preparation method of a hafnium two-dimensional atomic crystal material. The preparation method for the hafnium two-dimensional atomic crystal material comprises the following steps: 1, evaporating and depositing a proper amount of hafnium to a transition metal iridium substrate under a vacuum environment; and 2, annealing the whole sample to make hafnium atoms interact so as to form a two-dimensional long-range order membrane structure on the surface of the substrate, wherein the hafnium atoms are periodically arranged in a hexagonal honeycomb shape to form the novel two-dimensional atomic crystal material. The novel material with a graphene-like structure can expand the study field of amorphous carbon-based two-dimensional cellular crystal materials, and has high scientific research value and application potential.
Description
Technical field
The present invention relates to a kind of preparation method of hafnium two-dimensional atomic crystal material, belong to technical field of nano material.
Background technology
Two-dimensional atomic crystal material is because of the planar crystalline structure of its monoatomic thickness, and abundant and unique physics, chemical property and potential huge applications are worth the study hotspot becoming world technology circle in recent years.Wherein, Graphene was become focus and the representative of New Two Dimensional atomic crystal material after successfully peeling off from 2004.
The a series of peculiar electronics that Graphene shows and physical property, as high mobility, high mechanical strength, high light permeable rate, high conductivity etc., there is important application prospect in fields such as microtronics, micro-nano device, nesa coating, efficient conversion batteries.The research boom of Graphene excites people to the exploration of other New Two Dimensional atomic crystal materials (non-carbon, class graphene-structured) and research enthusiasm.
Such as, silene, as the silica-based counterpart of Graphene, existing its possibility existed of theoretical prophesy and the excellent properties being similar to Graphene.The two dimensional crystal material of other class graphene-structured, as boron nitride, molybdenumdisulphide etc. all show the physical property of many excellences.
When current microtronics faces physical size limits, these are that the development and application of the New Two Dimensional planar materials of representative is expected to merge current microelectronics silicon-based technologies with Graphene, break through the bottleneck problem that large-scale integrated circuit runs into, for the research fields such as China's basic science, information science, Materials science, energy science provide new opportunity and platform, important and far-reaching impact is produced on the Sustainable development of national economy and the strengthening of national defense safety.
Summary of the invention
Given this, the object of this invention is to provide a kind of hafnium two-dimensional atomic crystal material and preparation method thereof, a kind of novel two-dimensional atomic crystal material can be grown, this novel material shows as sequential 2 D, two-dimensional periodic structure that hafnium atom becomes hexagon cellular shape to arrange.
The invention provides a kind of hafnium two-dimensional atomic crystal material, hafnium atom becomes hexagon cellular shape to arrange, and expands in two dimensional surface periodically.
The invention provides a kind of preparation method of hafnium two-dimensional atomic crystal material, its step comprises:
1) under vacuum conditions, by the hydatogenesis of appropriate metal hafnium in transition metal base;
2) anneal is carried out to whole sample, to make the hafnium covering substrate surface interact, form the periodic structure of the sequential 2 D of hexagon cellular shape distribution.
Above-mentioned hafnium used is deposited in transition metal substrate by the method for electron beam evaporation.
The above-mentioned transition metal substrate for growing hafnium two-dimensional atomic crystal material is (111) face of iridium.
Above-mentioned annealing temperature of carrying out hafnium two-dimensional atomic crystal Material growth is 350 DEG C ~ 450 DEG C, is preferably 400 DEG C.
Above-mentioned hafnium two-dimensional atomic crystal material defines the polynuclear plane that the cycle is 0.54nm, this periodic structure can by scanning tunnel microscope and low electron energy diffractometer characterize.
The present invention is by the hafnium two-dimensional atomic crystal material of epitaxy method growing high-quality, and hafnium atom becomes hexagon cellular shape to arrange, and expands in two dimensional surface, is convenient to electronic property and the related device exploitation of studying hafnium two-dimensional atomic crystal material further.This two dimensional crystal material is different from Graphene, and Graphene performance is determined by sp orbital hybridization electronics; And hafnium is a kind of transition metal, the performance of this hafnium two-dimensional atomic crystal material that it is formed determines primarily of d orbital electron, d orbital electron can induce the new kink characteristics such as spin, so this New Two Dimensional atomic crystal material can be applicable to spintronics and device research.
Accompanying drawing explanation
Below, describe embodiment of the present invention in detail by reference to the accompanying drawings, wherein:
Fig. 1 shows overall preparation process effect schematic diagram of the present invention;
Fig. 2 shows the scanning tunnel microscope image at the high coverage hafnium particle of (111) surface deposition of iridium in the present invention;
Fig. 3 shows the scanning tunnel microscope image of the high quality hafnium two-dimensional atomic crystal material prepared on (111) face of iridium in the present invention;
Fig. 4 shows the low-energy electron diffraction pattern of hafnium two-dimensional atomic crystal material obtained after sample 400 DEG C of anneal in the present invention, comprises the diffraction spot of (2x2) superstructure in substrate iridium and hafnium two-dimensional atomic crystal material;
Fig. 5 shows the scanning tunnel microscope enlarged image of high quality hafnium two-dimensional atomic crystal material and the atomic structure model of correspondence prepared on (111) face of iridium in the present invention.
Embodiment
Below in conjunction with drawings and Examples, the preparation method to hafnium two-dimensional atomic crystal material is described in further detail.This embodiment is only used for the use specifically describing this invention more in detail, and shall not be applied to and limit the present invention in any form.
The present embodiment prepares high-quality hafnium two-dimensional atomic crystal material at transiting metal surface.Concrete steps are: first in vacuum chamber, carry out tens argon ion sputterings to iridium monocrystalline, and then by iridium substrate being heated and remaining on 850 DEG C, high temperature annealing obtains totally smooth (111) crystal face.Overall preparation process effect schematic diagram of the present invention as shown in Figure 1.Upper part illustrates the hafnium particle in the high coverage of (111) surface deposition of iridium in the present invention; Lower part illustrates the hafnium two-dimensional atomic crystal material that (111) surface growth at iridium after sample anneal in the present invention goes out.
Afterwards on totally smooth iridium surface, by electron beam evaporation source by metal hafnium uniform deposition on it, substrate remains on room temperature.Hafnium is random distribution at substrate surface, as shown in the scanning tunnel microscope image of Fig. 2.
The sample depositing hafnium particle is annealed at 400 DEG C, originally the hafnium particle being deposited on substrate surface disappears, as shown in Figure 3, and define on iridium surface the structure that a kind of cycle is 0.54nm, this structure comes from the hafnium atom crystalline material of the sequential 2 D formed at sample surfaces after anneal.The low-energy electron diffraction pattern of Fig. 4 shows the existence of this ordered structure.This cycle is that the structure of 0.54nm corresponds to the hafnium atom crystalline material of hafnium atom at the rear sequential 2 D formed of hexagon cellular shape arrangement of substrate surface, as shown in Figure 5.
Although be described in detail the present invention, but also under the condition not departing from main thought of the present invention, the suitable change of each condition can be carried out above.Can be understood as, the invention is not restricted to above-mentioned embodiment, and be attributed to the scope of claim, it comprises the equivalent replacement of described each factor.Such as, metal hafnium can deposit in substrate as direct heating hafnium rod by the additive method except electron beam evaporation, also can obtain the effect suitable with above-described embodiment.
Claims (4)
1. a preparation method for hafnium two-dimensional atomic crystal material, is characterized in that, comprises as follows
Step:
1) under vacuum conditions, by the hydatogenesis of appropriate metallic substance hafnium in transition metal base; For growing (111) face that the transition metal substrate of hafnium two-dimensional atomic crystal material is iridium;
2) anneal is carried out to whole sample, interact to make the hafnium atom covering substrate surface produce, form the periodic structure of the sequential 2 D of hexagon cellular shape arrangement, thus obtain hafnium two-dimensional atomic crystal material.
2. the method for claim 1, is characterized in that, hafnium used is deposited in transition metal substrate by the method for electron beam evaporation.
3. the method for claim 1, is characterized in that, the annealing temperature of carrying out hafnium two-dimensional atomic crystal Material growth is 350 DEG C ~ 450 DEG C.
4. the method for claim 1, it is characterized in that, described hafnium two dimensional crystal material, hafnium atom defines the ordered structure of hexagon cellular shape arrangement, cell pitch is 0.54nm, this periodic structure can by scanning tunnel microscope and low electron energy diffractometer characterize.
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| CN107720838B (en) * | 2016-08-11 | 2020-02-11 | 中国科学院物理研究所 | Platinum diselenide in-plane jigsaw puzzle structure material and preparation and modulation method thereof |
| CN106191999B (en) * | 2016-09-19 | 2018-11-20 | 中国科学院物理研究所 | A kind of antimony alkene two-dimensional atomic crystal material and preparation method thereof |
| CN106987904A (en) * | 2017-03-23 | 2017-07-28 | 厦门圣之岛金属科技有限公司 | A kind of tin alkene material and preparation method thereof |
| CN108611677A (en) * | 2018-05-08 | 2018-10-02 | 中国科学院物理研究所 | A kind of nature patterned mono-layer copper selenide two-dimensional atomic crystal material and preparation method |
Citations (2)
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| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102586868A (en) * | 2012-02-06 | 2012-07-18 | 中国科学院金属研究所 | Preparation method of large-size single-crystal graphene and continuous thin film thereof |
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| US8309438B2 (en) * | 2009-03-03 | 2012-11-13 | Board Of Regents, The University Of Texas System | Synthesizing graphene from metal-carbon solutions using ion implantation |
| KR101119913B1 (en) * | 2009-10-30 | 2012-03-05 | 삼성전자주식회사 | Electronic device comprising graphene thin film and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102134067A (en) * | 2011-04-18 | 2011-07-27 | 北京大学 | Method for preparing single-layer graphene |
| CN102586868A (en) * | 2012-02-06 | 2012-07-18 | 中国科学院金属研究所 | Preparation method of large-size single-crystal graphene and continuous thin film thereof |
Non-Patent Citations (2)
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| Buckled Silicene Formation on Ir(111);Lei Meng,et al.;《Nano Letters》;20130118;第13卷(第2013期);685-690 * |
| Intercalation of metal islands and films at the interface of epitaxially grown graphene and Ru(0001) surfaces;Li Huang et al.;《APPLIED PHYSICS LETTERS》;20111231;第99卷(第2011期);163107 * |
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