CN103074602A - Reaction chamber of chemical vapor deposition apparatus - Google Patents
Reaction chamber of chemical vapor deposition apparatus Download PDFInfo
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- CN103074602A CN103074602A CN2012100194243A CN201210019424A CN103074602A CN 103074602 A CN103074602 A CN 103074602A CN 2012100194243 A CN2012100194243 A CN 2012100194243A CN 201210019424 A CN201210019424 A CN 201210019424A CN 103074602 A CN103074602 A CN 103074602A
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- substrate
- spray header
- pedestal
- reaction chamber
- chemical vapor
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Abstract
The embodiment of the invention discloses a reaction chamber of a chemical vapor deposition apparatus. The reaction chamber comprises a pedestal used for receiving substrates, and at least two spray heads arranged opposite to the pedestal. The spray heads are used for providing reaction gas for the substrates. At least one substrate can be placed below each spray head. With the apparatus provided by the invention, problems such as processing difficulty and high cost of large-size spray head in the reaction chamber are solved. Compared with a reaction chamber with a single spray head, two or more spray heads are arranged in the reaction chamber provided by the invention, such that reaction gas distribution uniformity on the substrates can be improved, and the uniformity of formed epitaxial layer is improved.
Description
Technical field
The present invention relates to chemical vapour deposition (CVD) technical field, particularly the reaction chamber of chemical vapor depsotition equipment.
Background technology
MOCVD (Metal-Organic Chemical Vapor Deposition) is a kind of Novel air phase epitaxy depositing operation that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the source material as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, carry out depositing operation in the pyrolysis mode at pedestal, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.
The below describes the principle of existing depositing operation.Particularly, take MOCVD as example, please refer to the structural representation of existing deposition apparatus shown in Figure 1.
Be formed with the spray header 11 and the pedestal 12 that are oppositely arranged in the glove box 10.Described spray header 11 is interior can to arrange a plurality of apertures, and described spray header 11 is used for providing reactant gases.Usually place multi-disc substrate 121 on the described pedestal 12, the material of described substrate 121 is generally expensive sapphire.The below of described pedestal 12 also is formed with heating unit 13, and 13 pairs of described substrates 121 of described heating unit heat, so that the temperature on described substrate 121 surfaces reaches the temperature that epitaxy technique needs.
When carrying out MOCVD technique, reactant gases enters the conversion zone (position on the surface of close substrate 121) of pedestal 12 tops from the aperture of spray header 11, described substrate 121 is owing to the thermal radiation effect of heating unit 13 has certain temperature, thereby this temperature is so that carry out chemical reaction between the reactant gases, thereby at substrate 121 surface deposition epitaxial films.
Find in practice, along with the size of substrate constantly increases, the number of substrate is on the increase, the size of spray header is increasing, and this is so that the processing difficult of spray header, and large-sized spray header is expensive.
Summary of the invention
The problem that the embodiment of the invention solves has provided a kind of reaction chamber of chemical vapor depsotition equipment, has solved that large size spray header in the reaction chamber of existing chemical vapor depsotition equipment is difficult to process, the problem of cost costliness.
In order to address the above problem, the invention provides a kind of reaction chamber of chemical vapor depsotition equipment, comprising:
Pedestal, described pedestal are used for placing substrate;
At least two spray headers are oppositely arranged with pedestal, and described spray header is used for providing reactant gases to described substrate, and each spray header below can be placed a substrate at least.
Alternatively, the public cover gas source of described spray header, reactant gases enters spray header from gas source through gas pipeline, mixes between spray header and substrate.
Alternatively, described spray header covers the substrate that place its below at least.
Alternatively, also comprise: pneumatic outlet, be positioned at described pedestal away from a side of described spray header, the reactant gases vertical current is to substrate and pedestal, and unnecessary gas is outside to pedestal along substrate and base-plates surface, flows to the side away from substrate of described pedestal.
Compared with prior art, the present invention has the following advantages:
At at least two spray headers of the inner setting of the reaction chamber of chemical vapor depsotition equipment, solved that large-sized spray header in the reaction chamber is difficult to process, the problem of the high expensive of large size spray header, and with single spray header be set in the reaction chamber compare, the present invention arranges two above spray headers in reaction chamber, can improve the uniformity coefficient of the distribution of the reactant gases on the substrate, improve the uniformity coefficient of the epitaxial film that forms;
Further optimally, described spray header public overlaps gas source, has simplified the structure of reaction chamber; Reactant gases enters spray header from gas source through gas pipeline, mixes between spray header and substrate, but avoids reactant gases to mix the problem of easy generation pre-reaction before entering spray header;
Further optimally, away from a side of described spray header pneumatic outlet is set at described pedestal, so that the reactant gases vertical current is to substrate and pedestal, unnecessary gas is outside to pedestal along substrate and base-plates surface, flow to the side away from substrate of described pedestal, do not arrive substrate surface and namely be pumped thereby avoid being positioned at gas on the substrate of susceptor edges, improved the uniformity coefficient of chemical vapor deposition method.
Description of drawings
Fig. 1 is the structural representation of the MOCVD device of prior art;
Fig. 2 is the structural representation of reaction chamber of the chemical vapor depsotition equipment of first embodiment of the invention.
Embodiment
Prior art is owing to only having a spray header in the reaction chamber of chemical vapor depsotition equipment, along with the size of the substrate on the pedestal constantly increases, the number of substrate on the substrate is on the increase, the size of spray header constantly increases, and this is so that spray header processing and manufacturing complicated.And utilize large-sized spray header can't be equably with reaction gas distribution to substrate, so that the uniformity coefficient of the epitaxial film that existing chemical vapor deposition method forms can't meet the demands.
In order to address the above problem, the invention provides a kind of reaction chamber of chemical vapor depsotition equipment, comprising:
Pedestal, described pedestal are used for placing substrate;
At least two spray headers are oppositely arranged with pedestal, and described spray header is used for providing reactant gases to described substrate, and each spray header below can be placed a substrate at least.
As an embodiment, chemical vapor depsotition equipment of the present invention is MOCVD equipment, and certainly, as other embodiment, described chemical vapor depsotition equipment can also utilize for other chemical vapor depsotition equipment of showerhead configuration.
Below in conjunction with specific embodiment technical scheme of the present invention is described in detail.
For technical scheme of the present invention is described better, please in conjunction with the structural representation of the reaction chamber of the chemical vapor depsotition equipment of one embodiment of the invention shown in Figure 2.Be provided with pedestal 101 in the reaction chamber 100, described pedestal 101 is used for placing substrate 102, the material of described pedestal 101 is graphite or SiC etc., described pedestal 101 belows are provided with heating unit (not shown), and this heating unit can heat pedestal 101 and substrate 102 by the thermal radiation mode.The material of described substrate 102 can be the materials such as sapphire, Si, SiC.
As an embodiment, be provided with three spray headers 103 in the described reaction chamber 100.Described spray header 103 is oppositely arranged with pedestal 101, and described spray header 103 is used for providing reactant gases to substrate 102.One or more substrates 102 can be placed in described spray header 103 belows.
As an embodiment, 3 substrates 102 are placed in described spray header 103 belows, described three substrates 102 are arranged into equilateral triangle, described spray header 103 covers three substrates 102 that place its below at least, with the uniformity coefficient of the gas distribution that improves spray header 103 edges, improve the uniformity coefficient of the epitaxial film of the formation on the substrate 102.In other embodiment, when the size of substrate large (such as above 6 inches), can one spray header is corresponding places a slice or three substrates, thereby reduce as far as possible the size of spray header, the manufacture difficulty of reduction spray header; When the size less (such as being no more than 6 inches) of substrate, then can a spray header correspondence place the multi-disc substrate, thereby improve the efficient of deposition, the production capacity of raising MOCVD equipment as far as possible.
Please continue with reference to figure 2, as optional embodiment, described spray header 103 measure-alike is convenient to integrated processing, and described spray header 103 can be equilateral triangle and be arranged in pedestal 101 tops.As other embodiment, described spray header 103 also can have different sizes is set, such as a large-sized spray header is set at the pedestal center, the undersized spray header of a circle is set around this large-sized spray header, can improve like this utilization ratio of reaction chamber.
In order to improve the utilization ratio of gas source, simplify the layout of MOCVD equipment, as preferred embodiment, described spray header 103 shares a cover gas source.Please continue with reference to figure 3, described the first gas source 106 is connected by the first gas piping 104, and III family gas directly enters spray header 103 through the first gas piping 104; Described the second gas source 107 is connected with spray header 103 by the second gas piping 105, V family gas directly enters spray header through the second gas piping 105, the biochemical reaction of hybrid concurrency between spray header 103 and substrate 102 of III family gas and V family gas forms epitaxial film at substrate 102.Because III family gas and V family gas mix between spray header 103 and substrate 102 after by spray header 103, mix first with III family gas and V family gas and to enter the substrate top by spray header again and easily cause pre-reaction to compare, the embodiment of the invention can effectively solve the problem of pre-reaction, improves the quality of the epitaxial film that forms.
As optional embodiment, also be provided with pneumatic outlet 108 on the described reaction chamber 100, pneumatic outlet 108 is connected with pump, and the air-extraction function by pump is discharged the unnecessary gas in the chemical vapor deposition method process (comprising gas that chemical reaction does not occur, side reaction waste gas, unnecessary vector gas, clean air etc.).
The position of described pneumatic outlet 108 can arrange flexibly.As one embodiment of the present of invention, described pneumatic outlet 108 can be arranged on the reaction chamber 100 of substrate 102 tops, and namely the position of pneumatic outlet 108 is higher than the plane at substrate 102 places.But consider that if pneumatic outlet 108 is arranged on substrate 102 tops, the surface that the gas that is positioned at substrate 102 tops at pedestal 101 edges may not arrive substrate 102 namely is pumped, thereby affects the uniformity coefficient of chemical vapor deposition method.
As preferred embodiment, described gas vent 108 is arranged on the side of described pedestal 101 away from described spray head 103, the position that is gas vent 108 is lower than the plane at substrate 102 places with position fair or gas vent 108, the plane at substrate 102 places at least, like this, reacting gas is the surface to substrate 102 and pedestal 101 from spray head 103 vertical currents, on the surface of substrate 102 and pedestal 101, forming air-flow stably distributes, unnecessary gas is along substrate 102 and pedestal 101 surfaces to pedestal 101 outsides, flow to the side away from substrate 102 of described pedestal 101
To sum up, the present invention arranges at least two spray headers by the reaction chamber inside at chemical vapor depsotition equipment, solved that large-sized spray header in the reaction chamber is difficult to process, the problem of the high expensive of large size spray header, and with single spray header be set in the reaction chamber compare, the present invention arranges two above spray headers in reaction chamber, can improve the uniformity coefficient of the distribution of the reactant gases on the substrate, improve the uniformity coefficient of the epitaxial film that forms;
Further optimally, described spray header public overlaps gas source, has simplified the structure of reaction chamber; Reactant gases enters spray header from gas source through gas pipeline, mixes between spray header and substrate, but avoids reactant gases to mix the problem of easy generation pre-reaction before entering spray header;
Further optimally, away from a side of described spray header pneumatic outlet is set at described pedestal, so that the reactant gases vertical current is to substrate and pedestal, unnecessary gas is outside to pedestal along substrate and base-plates surface, flow to the side away from substrate of described pedestal, do not arrive substrate surface and namely be pumped thereby avoid being positioned at gas on the substrate of susceptor edges, improved the uniformity coefficient of chemical vapor deposition method.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (4)
1. the reaction chamber of a chemical vapor depsotition equipment is characterized in that, comprising:
Pedestal, described pedestal are used for placing substrate;
At least two spray headers are oppositely arranged with pedestal, and described spray header is used for providing reactant gases to described substrate, and each spray header below can be placed a substrate at least.
2. the reaction chamber of chemical vapor depsotition equipment as claimed in claim 1 is characterized in that, the public cover gas source of described spray header, and reactant gases enters spray header from gas source through gas pipeline, mixes between spray header and substrate.
3. the reaction chamber of chemical vapor depsotition equipment as claimed in claim 1 is characterized in that, described spray header covers the substrate that place its below at least.
4. the reaction chamber of chemical vapor depsotition equipment as claimed in claim 1, it is characterized in that, also comprise: pneumatic outlet, be positioned at described pedestal away from a side of described spray header, the reactant gases vertical current is to substrate and pedestal, unnecessary gas is outside to pedestal along substrate and base-plates surface, flows to the side away from substrate of described pedestal.
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| CN2012100194243A CN103074602A (en) | 2012-01-21 | 2012-01-21 | Reaction chamber of chemical vapor deposition apparatus |
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| CN2012100194243A CN103074602A (en) | 2012-01-21 | 2012-01-21 | Reaction chamber of chemical vapor deposition apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839074A (en) * | 2015-02-03 | 2016-08-10 | Lg电子株式会社 | Metal organic chemical vapor deposition apparatus for solar cell |
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| JP2009016624A (en) * | 2007-07-05 | 2009-01-22 | Nikkoshi Co Ltd | Method of manufacturing multi-shower head for cvd of multilayer structure |
| CN101495675A (en) * | 2005-02-23 | 2009-07-29 | 布里奇勒克斯股份有限公司 | Chemical vapor deposition reactor having multiple inlets |
| CN101560650A (en) * | 2009-05-15 | 2009-10-21 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| TW201029748A (en) * | 2008-12-10 | 2010-08-16 | Ips Ltd | Apparatus for treatment of plural substrates |
| CN102312217A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Method for growing semiconductor film by using composite model, and apparatus thereof |
| CN102312221A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Atomic layer deposition apparatus employing uniform air intake system |
| CN202450155U (en) * | 2012-01-21 | 2012-09-26 | 光达光电设备科技（嘉兴）有限公司 | Reaction chamber for chemical vapor deposition equipment |
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2012
- 2012-01-21 CN CN2012100194243A patent/CN103074602A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1747139A (en) * | 2004-09-10 | 2006-03-15 | 茂德科技股份有限公司 | Improvement of atomic layer deposition and apparatus thereof |
| CN101495675A (en) * | 2005-02-23 | 2009-07-29 | 布里奇勒克斯股份有限公司 | Chemical vapor deposition reactor having multiple inlets |
| US20080214012A1 (en) * | 2007-01-12 | 2008-09-04 | Samsung Electronics Co., Ltd. | Apparatus and method for fabricating semiconductor devices and substrates |
| JP2009016624A (en) * | 2007-07-05 | 2009-01-22 | Nikkoshi Co Ltd | Method of manufacturing multi-shower head for cvd of multilayer structure |
| TW201029748A (en) * | 2008-12-10 | 2010-08-16 | Ips Ltd | Apparatus for treatment of plural substrates |
| CN101560650A (en) * | 2009-05-15 | 2009-10-21 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| CN102312217A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Method for growing semiconductor film by using composite model, and apparatus thereof |
| CN102312221A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Atomic layer deposition apparatus employing uniform air intake system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839074A (en) * | 2015-02-03 | 2016-08-10 | Lg电子株式会社 | Metal organic chemical vapor deposition apparatus for solar cell |
| US10388820B2 (en) | 2015-02-03 | 2019-08-20 | Lg Electronics Inc. | Metal organic chemical vapor deposition apparatus for solar cell |
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Application publication date: 20130501 |