CN103066085B - Pixel cell, pel array, imageing sensor and electronic product - Google Patents
Pixel cell, pel array, imageing sensor and electronic product Download PDFInfo
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- CN103066085B CN103066085B CN201210549888.5A CN201210549888A CN103066085B CN 103066085 B CN103066085 B CN 103066085B CN 201210549888 A CN201210549888 A CN 201210549888A CN 103066085 B CN103066085 B CN 103066085B
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Abstract
The invention discloses a kind of pixel cell, pel array, imageing sensor and electronic product, wherein, pixel cell includes：Photosensitive layer, photosensitive layer includes：Photo-sensitive cell, on substrate, carries out opto-electronic conversion for collecting incident light and obtains photosensitive electric signal；Switching device, on the substrate, for exporting control signal and the photosensitive electric signal to the photo-sensitive cell；Metal level, on the photosensitive layer, for transmitting to the control signal of the photo-sensitive cell and by the photosensitive electric signal output to peripheral processes circuit；Condensing incident light part, the transmission path for changing the incident light, by the photosensitive region of the condensing incident light to the photo-sensitive cell.By setting incident light accumulation unit, such as shading ring/embedded bevelled sub- metal level of lenticule/tool in pixel cell so that incident light is tried one's best the photosensitive region of directive photo-sensitive cell, so as to improve the effective collection to zonal ray beyond photo-sensitive cell.
Description
Technical field
The invention belongs to specifically, be related to a kind of pixel cell, pel array, imageing sensor and electronic product.
Background technology
Imageing sensor can convert optical signals to electric signal.At present, imageing sensor can be divided into based on electric charge coupling
The imageing sensor of clutch part (CCD), and based on complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor.Due to CMOS
Imageing sensor is compared with ccd sensor, the low-power consumption having, and the features such as inexpensive and compatible with CMOS technology, therefore is obtained
It is widely applied.Such as remove be applied to consumer electronics field such as miniature digital camera (DIGITAL SPY CAMERA, DSC),
In mobile phone camera, video camera and digital list anti-(DIGITAL SINGLE LENSE REFLEX, DSLR), in automotive electronics, prison
Also applied in the fields such as control, biotechnology and medical science.
In cmos image sensor, 3T, 4T and 5T can be categorized into according to number of transistors purpose number in pixel cell
Formula, in the cmos image sensor of 3T formulas, pixel cell includes a photodiode and 3 MOS transistors, 4T and 5T formula pictures
Plain unit includes a photodiode and 4 or 5 MOS transistors respectively.Photodiode in pixel cell is photosensitive
Unit, realizes the collection to light and opto-electronic conversion, and other MOS transistors are control units, are mainly realized to the pole of photoelectricity two
Pipe such as chooses, resets and reads at the control.
In the prior art, in cmos image sensors, the sensitivity of each pixel cell is directly and in pixel cell
The ratio that the area of photodiode accounts for whole pixel cell area is directly proportional, and the ratio is referred to as fill factor, curve factor, due to photoelectricity two
There are 3,4 or 5 transistors for signal control between pole pipe, thus transistor to occupy whole pixel cell a large amount of
Area so that in usual cmos image sensor the fill factor, curve factor of pixel cell between 20% to 50%, in other words, 50%
Incident light on to 80% area is shielded, it is impossible to by photodiode collection and participate in opto-electronic conversion, thus, result in
The reduction of loss and the pixel cell sensitivity of incident light.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of pixel cell, pel array, imageing sensor and electricity
Sub- product.
In order to solve the above-mentioned technical problem, the invention provides a kind of pixel cell, including：
Photosensitive layer, including：
Photo-sensitive cell, on substrate, carries out opto-electronic conversion for collecting incident light and obtains photosensitive electric signal；
Switching device, on the substrate, for exporting to the control signal of the photo-sensitive cell and described photosensitive
Electric signal；
Metal level, on the photosensitive layer, for transmitting to the control signal of the photo-sensitive cell and by described in
Photosensitive electric signal output is to peripheral processes circuit；The metal level includes a bevelled sub- metal level of tool, described for changing
The transmission path of incident light, by the photosensitive region of the condensing incident light to the photo-sensitive cell；
Condensing incident light part, the transmission path for changing the incident light, by the condensing incident light described in
The photosensitive region of photo-sensitive cell；
Wherein, the condensing incident light part includes：
Incident light reflector element, the transmission path for changing the incident light for the first time by reflection, so that the incidence
The photosensitive region of photo-sensitive cell described in light directive, the incident light reflector element is a shading ring, is pushed up in the metal level
The upper surface of straton metal level；
Light focusing unit, the transmission path for changing the incident light, by the condensing incident light to the photosensitive unit
The photosensitive region of part, the light focusing unit is set between two vertically adjacent in the metal layer sub- metal levels, to cover
Cover on the position of the photo-sensitive cell, the light focusing unit is a lenticule；
Wherein, oblique incident ray is reflected into lenticule by shading ring, and metal level inclined-plane reflects into a subtle way vertical incidence light
Lens, and reflected light is focused on again by lenticule, is reflected, realize the effective collection to zonal ray beyond photo-sensitive cell.
Preferably, an embodiment of the invention, the switching device is covered by the metal level.
Preferably, an embodiment of the invention, the ring body of the shading ring is dielectric material, and being filled with ring cavity can be anti-
Penetrate the metal of incident light.
In order to solve the above-mentioned technical problem, the invention provides a kind of forming method of pixel cell, including：
Photo-sensitive cell and switching device are formed on substrate, to form photosensitive layer, wherein, the photo-sensitive cell is used to receive
Collection incident light carries out opto-electronic conversion and obtains photosensitive electric signal, and the switching device is used to export the control letter to the photo-sensitive cell
Number and the photosensitive electric signal；
Metal level is formed on the photosensitive layer, to transmit to the control signal of the photo-sensitive cell and by the sense
Peripheral processes circuit is arrived in photosignal output；When forming metal level on the photosensitive layer, the metal level is set to include tool
Bevelled sub- metal level, the transmission path for changing the incident light again by reflection, by the condensing incident light
To the photosensitive region of the photo-sensitive cell；
Condensing incident light part is formed on the path being transferred on the photo-sensitive cell of incident light, for changing institute
The transmission path of incident light is stated, by the photosensitive region of the condensing incident light to the photo-sensitive cell；
Wherein, when forming condensing incident light part, on the path being transferred on the photo-sensitive cell of incident light, pass through
Between two vertically adjacent in the metal layer sub- metal levels, gathered with forming one on the position for covering the photo-sensitive cell
Light unit, changes the transmission path of the incident light, and by the photosensitive region of the condensing incident light to the photo-sensitive cell, institute
Light focusing unit is stated for a lenticule；
Wherein, when condensing incident light part is formed, an incident light reflector element is formed, for changing by the way that reflection is first
The transmission path of the incident light, so that the photosensitive region of photo-sensitive cell described in the incident light directive, being formed, incident light is anti-
When penetrating unit, the top layer metal level top face metallization medium layer in the metal level, and photoetching and quarter are carried out to the dielectric layer
Erosion forms a ring body, and filling can reflect the metal of incident light in the ring cavity of the ring body, to form a shading ring；
Wherein, the angle on sub- metal level inclined-plane is adjusted according to the distance of reflecting surface to lenticule, and is etched by adjusting
The composition ratio of reaction polymer is adjusted in menu, ensureing that reflection light can reach the surface of lenticule.
Preferably, an embodiment of the invention, when forming metal level on the photosensitive layer, makes the derailing switch
Part is covered by the metal level.
In order to solve the above-mentioned technical problem, the invention provides a kind of pel array, including above-mentioned pixel cell.
In order to solve the above-mentioned technical problem, the invention provides a kind of imageing sensor, including above-mentioned pel array.
In order to solve the above-mentioned technical problem, the invention provides a kind of electronic product, including above-mentioned imageing sensor.The electricity
Sub- product can be product such as mobile phone, e-book, camera etc. of arbitrary disposition imageing sensor.
Compared with currently existing scheme, by setting incident light accumulation unit, such as shading ring/embedded in pixel cell
The bevelled sub- metal level of lenticule/tool so that the delivering path of incident light changes, directive photo-sensitive cell is photosensitive as far as possible
Region, so as to improve the effective collection to zonal ray beyond photo-sensitive cell, improves the sensitivity of pixel cell.
Brief description of the drawings
Fig. 1 is the structural representation of pixel cell in the embodiment of the present invention one；
Fig. 2 is the schematic diagram of pixel cell structure in the embodiment of the present invention two；
Fig. 3 is the schematic diagram of pixel cell structure in the embodiment of the present invention three；
Fig. 4 is a kind of forming method flow chart of the pixel cell of the embodiment of the present invention four；
Fig. 5 show a part of structural representation of pixel cell after execution step 401, step 402；
Fig. 6 show perform step 403 in formed light focusing unit after pixel cell a part of structural representation；
Fig. 7 show perform step 403 in formed light focusing unit after pixel cell another part structural representation；
Fig. 8 is a part for pixel cell after the conductive through hole to form the sub- metal level in intermediate layer and the sub- layer metal interconnection of top layer
Structural representation；
Fig. 9 is a part of structural representation to form pixel cell after the sub- metal level of top layer；
Figure 10 is the complete structure schematic diagram to form pixel cell after shading ring.
Specific embodiment
Describe embodiments of the present invention in detail below in conjunction with schema and embodiment, thereby how the present invention is applied
Technological means can fully understand and implement according to this to solve technical problem and reach the implementation process of technology effect.
In following embodiments of the invention, the present invention sets an incidence in the transmission path of incident light to photo-sensitive cell
The composite construction of light accumulation unit such as shading ring, metal level inclined-plane and embedded lenticule, wherein shading ring is anti-by oblique incident ray
Inject embedded lenticule, vertical incidence light is reflected into embedded lenticule by metal level inclined-plane, due to have shading ring and
Light after metal level slant reflection is not, perpendicular to photodiode surface, but have certain angle, therefore they
The surface of photodiode might not be all arrived at and photovoltaic reaction is produced, and passed through the embedded of high index of refraction and declined
Mirror, these reflected lights for having certain angle can again be focused on by lenticule, formed after superrefraction and be approximately perpendicular to photoelectricity
The light of Diode facets, is so achieved that the effective collection to zonal ray beyond photodiode, improves pixel list
The sensitivity of unit.And because metal interconnecting wires are interspersed between multilayer, incident light will not reach metal-oxide-semiconductor region and cause
Electric leakage, i.e., do not have noise generation, while shading ring further prevents the generation of crosstalk between pixel.
Fig. 1 is the structural representation of pixel cell in the embodiment of the present invention one.As shown in figure 1, in the present embodiment, pixel list
Unit includes photosensitive layer (not shown), metal level (not shown) and condensing incident light part 103, wherein：
Photosensitive layer includes photo-sensitive cell 111 and switch element 121, and photo-sensitive cell 111 is located at substrate (not shown)
On, opto-electronic conversion is carried out for collecting incident light obtains photosensitive electric signal；Switching device 121 is located on the substrate, for defeated
Go out the control signal and the photosensitive electric signal to the photo-sensitive cell 111.In the present embodiment, due to the edge in cutting direction
Therefore, two switching devices are can only see, the switching device 121 can be mos transistors, or other types, as long as can realize
Signal transmission, will not be repeated here.
Metal level is located on the photosensitive layer, for transmitting to the control signal of the photo-sensitive cell 111 and by institute
State photosensitive electric signal output to peripheral processes circuit；The sub- metal level of multilayer can be included in metal level, the setting of metal level is in itself
Prior art, to those skilled in the art, itself it will be clear that how to set and set several layers of, herein no longer
Repeat.It should be noted that the different sub- metal levels of metal level can use electroconductive contact holes 131 with the connection of switching device termination
Connection, in addition, the interconnection between different sub- metal levels can be connected by conductive through hole 141, as in metal level based on letter
The need for number transmission, interconnection between sub- metal level belongs to prior art for those skilled in the art, or according to
Enlightenment of the invention, can realize without creative work, will not be repeated here.
In the present embodiment, the switching device 121 is covered by the metal level, because metal interconnecting wires are between multilayer
Be interspersed so that switching device 121 is covered by metal level, incident light will not reach switching device 121 where region and
Electric leakage is caused, i.e., does not have noise generation.
Condensing incident light part 103, the transmission path for changing the incident light, by the condensing incident light to institute
State the photosensitive region of photo-sensitive cell 111.
In the present embodiment, the condensing incident light part 103 can include：Incident light reflector element 113, for by anti-
The transmission path for changing the incident light for the first time is penetrated, so that the photosensitive region of photo-sensitive cell 111 described in the incident light directive.
Preferably, the incident light reflector element is a shading ring, on the sub- metal level of top layer in the metal level
Surface.Because in the present embodiment, metal level includes the sub- sub- metal level of metal level 112, intermediate layer of three straton metal levels, i.e. bottom
122nd, the sub- metal level 132 of top layer.Therefore, shading ring can be formed directly on the sub- metal level 132 of top layer, specifically, described
The ring body of shading ring can be dielectric material, and being filled with ring cavity can reflect the metal of incident light.It should be noted that the incident light
Reflector element is not limited to a shading ring, or other structure members, as long as can pass through to reflect changes incident light
Transmission path, makes the photosensitive region of incident light directive photo-sensitive cell 111 as far as possible, with by the participation as much as possible of photo-sensitive cell 111
Opto-electronic conversion, forms photosensitive electric signal.In the present embodiment, on the one hand shading ring changes the transmission path of incident light, in addition a side
Face, can also further prevent the generation of crosstalk between pixel.
Further, in the present embodiment, the condensing incident light part 103 can also include：Light focusing unit 123, is used for
Change the transmission path of the incident light, by the photosensitive region of the condensing incident light to the photo-sensitive cell 111.Specifically
Ground, the light focusing unit can be set between two vertically adjacent in the metal layer sub- metal levels, described to cover
On the position of photo-sensitive cell 111.The light focusing unit can be an embedded lenticule.
In the present embodiment, light focusing unit 123 is specifically formed between middle sub- metal level 122, and for the common skill in this area
For art personnel, in an other embodiment of the invention, light focusing unit 123 can also be formed in the sub- metal level 112 of bottom it
Between, or, it is formed between the sub- metal level 132 of top layer, when specifically being formed, can again correspond to sub- metal level upper surface or following table
Face is reference.Those of ordinary skill in the art's enlightenment according to embodiments of the present invention, without creative work be it is available how
Light focusing unit is set, be will not be repeated here.The schematic diagram of pixel cell structure in the embodiment of the present invention two is illustrated in figure 2, is gathered
Light unit 123 is arranged between the sub- metal level 112 of bottom, is repeated no more in detail, can participate in above-mentioned Fig. 1 and associated description.
Further, in the present embodiment, in order to avoid metal level may make to the incident light of masking to photo-sensitive cell 111
The metal level includes a bevelled sub- metal level of tool, and the transmission path for changing the incident light again will be described
Photosensitive region of the condensing incident light to the photo-sensitive cell 111.Specifically, in the present embodiment, the sub- metal level 132 of top layer is being formed
When, the line width from down to up that top layer interest belongs to is gradually reduced by layout design, then by the adjustment of metal etch menu
An inclined-plane is formed in the side wall of metal.Need explanation when, it is also possible to the sub- metal level 122 in intermediate layer is configured with one oblique
Face, to avoid the masking to incident light, as shown in figure 3, being the schematic diagram of pixel cell structure in the embodiment of the present invention three, will push up
The sub- metal level 122 of straton metal level 112 and intermediate layer is configured with an inclined-plane and repeats no more in detail simultaneously, can participate in above-mentioned
Fig. 1 and associated description.
Fig. 4 show a kind of forming method flow chart of the pixel cell of the embodiment of the present invention four, as shown in figure 4, this implementation
In example, it can include：
Step 401, formation photo-sensitive cell and the switching device on substrate, to form photosensitive layer, wherein, the photosensitive unit
Part is used to collecting incident light to carry out opto-electronic conversion and obtains photosensitive electric signal, and the switching device is used to export to the photo-sensitive cell
Control signal and the photosensitive electric signal；
Step 402, on the photosensitive layer form metal level, to transmit to the control signal of the photo-sensitive cell and
By the photosensitive electric signal output to peripheral processes circuit；
Fig. 5 show a part of structural representation of pixel cell after execution step 401, step 402, and it includes photosensitive layer
And photo-sensitive cell 111 therein and switch element 121, and the sub- metal level 112 of bottom and intermediate layer interest in metal level
Category layer 122, and the contact hole 131 that the sub- metal level 112 of bottom is electrically connected with switch element 121, the sub- metal level 122 in intermediate layer and
The conductive through hole 141 of the sub- interconnection of metal level 112 of bottom.
In the present embodiment, when forming metal level on the photosensitive layer in step 402, can be by different in metal level
The dislocation of sub- metal level is laid, and the switching device is covered by the metal level.
In the present embodiment, when forming metal level on the photosensitive layer in step 402, the metal level is set to include tool
Bevelled sub- metal level, the transmission path for changing the incident light again by reflection, by the condensing incident light
To the photosensitive region of the photo-sensitive cell.
Step 403, on the path being transferred on the photo-sensitive cell of incident light formed condensing incident light part, with
In the transmission path for changing the incident light, by the photosensitive region of the condensing incident light to the photo-sensitive cell.
In the present embodiment, when forming condensing incident light part in step 403, the photo-sensitive cell is transferred in incident light
On path on can form a light focusing unit, change the transmission path of the incident light, and by the condensing incident light to institute
State the photosensitive region of photo-sensitive cell.Specifically, by between two vertically adjacent in the metal layer sub- metal levels, with
A light focusing unit is formed on the position for covering the photo-sensitive cell.For example, forming an optically focused between the sub- metal level 122 in intermediate layer
For example embedded lenticule of element.Specifically, Fig. 6 show to perform and formed one of pixel cell after light focusing unit in step 403
Separation structure schematic diagram, Fig. 7 show perform step 403 in formed light focusing unit after pixel cell another part structural representation
Figure, as shown in Figures 6 and 7, step is micro- in metallic intermediate layer one layer of 122 upper surface chemical vapor deposition of layer on the basis of Fig. 5
The dielectric layer 1231 of mirror, lenticule dielectric layer material can use the material of the highs index of refraction such as silicon nitride.By photoetching and etching
Formed with certain curvature radius, positioned at the embedded lenticule of the top of photo-sensitive cell 111.
In step 403, due in this implementation metal level have three straton metal levels, therefore, formed light focusing unit 123 it
Afterwards, in addition it is also necessary to the conductive through hole 141 of the sub- metal level 122 in intermediate layer and the sub- interconnection of metal level 132 of top layer is formed, as shown in figure 8, being
A part of structural representation of pixel cell after the conductive through hole of the formation sub- metal level in intermediate layer and the sub- layer metal interconnection of top layer, can
Quarter or tungsten are returned with by dielectric layer deposition, the photoetching of through hole and etching, the deposit of through hole internal barrier and tungsten, by tungsten
CMP (chemically mechanical polishing) come formed for interconnect conductive through hole, will not be repeated here.
Further, as shown in figure 9, a part of structural representation to form pixel cell after the sub- metal level of top layer.This
In embodiment, the sub- metal level 132 of top layer in metal level is specifically configured with inclined-plane.Need explanation when, due to metal level
The dislocation mode of neutron metal level is different, if the position of the sub- metal level of top layer will not cover incident light to photo-sensitive cell originally
Transmission, but other may cover incident light such as the position of middle sub- metal level, at this time it is also possible to middle sub- metal level is set
Into with inclined-plane.Other analogues, will not be repeated here, and those of ordinary skill in the art are according to prior art or the present invention
The enlightenment of embodiment, is it is contemplated that combining actual conditions flexible design without creative work.Forming the bevelled top layer of tool
Line width can be reduced by layout design when interest belongs to, so that vertical incidence light is well into reflector space.Top layer interest
The angle on the inclined-plane of category is adjusted according to reflecting surface to the distance of embedded lenticule, to ensure that it is embedded that reflection light can be reached
The surface of lenticule, the angle on metal inclined-plane can be adjusted by adjusting the composition ratio of reaction polymer in etching menu.
In the present embodiment, when forming condensing incident light part in step 403, when condensing incident light part is formed, may be used also
To form an incident light reflector element, the transmission path for changing the incident light for the first time by reflection, so that the incidence
The photosensitive region of photo-sensitive cell described in light directive.Specifically, when incident light reflector element is formed, the top layer in the metal level
Sub- metal level top face metallization medium layer, and photoetching and etching one ring body of formation are carried out to the dielectric layer, and in the ring of the ring body
Filling can reflect the metal of incident light in chamber, to form a shading ring.As shown in Figure 10, it is pixel cell after formation shading ring
Complete structure schematic diagram.
Described above has shown and described some preferred embodiments of the invention, but as previously described, it should be understood that the present invention
Be not limited to form disclosed herein, be not to be taken as the exclusion to other embodiment, and can be used for various other combinations,
Modification and environment, and can be in invention contemplated scope described herein, by above-mentioned teaching or the technology or knowledge of association area
It is modified.And the change and change that those skilled in the art are carried out do not depart from the spirit and scope of the present invention, then all should be in this hair
In the protection domain of bright appended claims.
Claims (8)
1. a kind of pixel cell, it is characterised in that including：
Photosensitive layer, including：
Photo-sensitive cell, on substrate, carries out opto-electronic conversion for collecting incident light and obtains photosensitive electric signal；
Switching device, on the substrate, for exporting control signal and the photosensitive telecommunications to the photo-sensitive cell
Number；
Metal level, on the photosensitive layer, for transmitting to the control signal of the photo-sensitive cell and will be described photosensitive
Electric signal output is to peripheral processes circuit；The metal level includes a bevelled sub- metal level of tool, for changing the incidence
The transmission path of light, by the photosensitive region of the condensing incident light to the photo-sensitive cell；
Condensing incident light part, the transmission path for changing the incident light, by the condensing incident light to described photosensitive
The photosensitive region of element；
Wherein, the condensing incident light part includes：
Incident light reflector element, the transmission path for changing the incident light for the first time by reflection, so that the incident light is penetrated
To the photosensitive region of the photo-sensitive cell, the incident light reflector element is a shading ring, top layer in the metal level
The upper surface of metal level；
Light focusing unit, the transmission path for changing the incident light, by the condensing incident light to the photo-sensitive cell
Photosensitive region, the light focusing unit is set between two vertically adjacent in the metal layer sub- metal levels, to cover
State on the position of photo-sensitive cell, the light focusing unit is a lenticule；
Wherein, oblique incident ray is reflected into lenticule by shading ring, and vertical incidence light is reflected into lenticule by metal level inclined-plane,
And reflected light is focused on again by lenticule, is reflected, realize the effective collection to zonal ray beyond photo-sensitive cell.
2. pixel cell according to claim 1, it is characterised in that the switching device is covered by the metal level.
3. pixel cell according to claim 1, it is characterised in that the ring body of the shading ring is dielectric material, ring cavity
In be filled with the metal that can reflect incident light.
4. a kind of forming method of pixel cell, it is characterised in that including：
On substrate formed photo-sensitive cell and switching device, to form photosensitive layer, wherein, the photo-sensitive cell be used for collect into
Penetrate light and carry out opto-electronic conversion and obtain photosensitive electric signal, the switching device be used to exporting to the control signal of the photo-sensitive cell with
And the photosensitive electric signal；
Metal level is formed on the photosensitive layer, to transmit to the control signal of the photo-sensitive cell and by the photosensitive electricity
Signal output is to peripheral processes circuit；When forming metal level on the photosensitive layer, the metal level is set to include having tiltedly
The sub- metal level in face, the transmission path for changing the incident light again by reflection, by the condensing incident light to institute
State the photosensitive region of photo-sensitive cell；
Condensing incident light part is formed on the path being transferred on the photo-sensitive cell of incident light, for entering described in change
The transmission path of light is penetrated, by the photosensitive region of the condensing incident light to the photo-sensitive cell；
Wherein, when forming condensing incident light part, on the path being transferred on the photo-sensitive cell of incident light, by gold
In category layer between two vertically adjacent sub- metal levels, to form an optically focused list on the position for covering the photo-sensitive cell
Unit, changes the transmission path of the incident light, and by the photosensitive region of the condensing incident light to the photo-sensitive cell, it is described poly-
Light unit is a lenticule；
Wherein, when condensing incident light part is formed, an incident light reflector element is formed, for changing described by the way that reflection is first
The transmission path of incident light, so that the photosensitive region of photo-sensitive cell described in the incident light directive, being formed, incident light reflection is single
When first, the top layer metal level top face metallization medium layer in the metal level, and photoetching and etching shape are carried out to the dielectric layer
Into a ring body, and filling can reflect the metal of incident light in the ring cavity of the ring body, to form a shading ring；
Wherein, the angle on sub- metal level inclined-plane is adjusted according to the distance of reflecting surface to lenticule, and by adjusting etching menu
The composition ratio of middle reaction polymer is adjusted, ensureing that reflection light can reach the surface of lenticule.
5. method according to claim 4, it is characterised in that when forming metal level on the photosensitive layer, makes described
Switching device is covered by the metal level.
6. a kind of pel array, it is characterised in that including any described pixel cell of claims 1 to 3.
7. a kind of imageing sensor, it is characterised in that including the pel array described in claim 6.
8. a kind of electronic product, it is characterised in that including the imageing sensor described in claim 7.
Priority Applications (1)
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| CN101266985A (en) * | 2007-03-14 | 2008-09-17 | 格科微电子（上海）有限公司 | Method for reducing incident light noise of image sensor |
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| US6166369A (en) * | 1998-11-25 | 2000-12-26 | Intel Corporation | Microcollector for photosensitive devices using sol-gel |
| US7110034B2 (en) * | 2001-08-31 | 2006-09-19 | Canon Kabushiki Kaisha | Image pickup apparatus containing light adjustment portion with reflection of a portion of light onto adjacent pixels |
| CN1819226A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
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