CN103065989B - Processing method of multi-path electrostatic discharge protection device - Google Patents
Processing method of multi-path electrostatic discharge protection device Download PDFInfo
- Publication number
- CN103065989B CN103065989B CN201210585564.7A CN201210585564A CN103065989B CN 103065989 B CN103065989 B CN 103065989B CN 201210585564 A CN201210585564 A CN 201210585564A CN 103065989 B CN103065989 B CN 103065989B
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- base material
- conductive
- layer
- conductive region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
The invention discloses a processing method of a multi-path electrostatic discharge (ESD) protection device. The processing method of the multi-path ESD protection device comprises that through holes with the number of N is processed in a first base material which comprises a first conducting layer, a second conducting layer and a first insulating layer which is located between the first conducting layer and the second conducting layer; conducting materials are filled in the through holes with the number of N; graphic processing is carried out on the second conducting layer; graphic processing is carried out on the first conducting layer and/or a blind groove which penetrates to the first insulating layer is processed on the first conducting layer, and a first resin layer is arranged on the first conducting layer; a protection layer is arranged on the first resin layer; blinds holes with the number of N to 1 which penetrates to the first insulating layer is processed on the protection layer; thick liquid materials are filled in the blind holes with the number of N to 1; the protection layer is peeled from the first resin layer; and a protection upper body is arranged on the first resin layer. The processing method of the ESD protection device is beneficial for reducing manufacturing cost of the ESD protection device and improving safety of the ESD protection device.
Description
Technical field
The present invention relates to electronic device processing and manufacturing technical field, be specifically related to a kind of processing method of multi-channel electrostatic discharge protective device.
Background technology
Along with the development of integrated circuit technology, transistor size has tapered to the sub-micron even deep-submicron stage.The reduction of device physical dimension, substantially increases the integrated level of circuit, but the integrity problem of highly integrated device is also following.ESD(electro-static discharge, Electro-static Driven Comb) be exactly one of main reason causing electronic equipment and component failure.This mainly because, along with reducing of component size, the thickness of grid oxide layer of such as field effect element is thinning gradually, although this change significantly can improve the operating efficiency of circuit, but circuit but may be made to become more fragile, thus when being subject to electrostatic impact, circuit is easy to lose efficacy.
In order to solve the integrity problem of electronic equipment and the components and parts caused due to ESD, consider in the industry to introduce in integrated circuits the ESD protective device (also electrostatic impedor can be referred to as) with superior performance, higher tolerance.ESD protective device is generally configured between the signal line of circuit and earth terminal, and under circuit normal operating conditions, ESD protective device two ends are separated by the dielectric layer of centre, present high-impedance state, and signal can not flow into earth terminal by ESD protective device.When circuit be subject to ESD affect time; when such as, electrostatic in application on human skin is applied on circuit; a very large magnitude of voltage may be there is in circuit; the generation of large voltage makes ESD protective device two ends occur large electrical potential difference; now ESD protective device is breakdown; change conducting state into by high-impedance state, so just electrostatic is imported to earth terminal, and then avoid operating circuit because the excessive damage caused of voltage.The electrical potential difference that electrostatic derives rear ESD protective device two ends disappears thereupon, and ESD protective device gets back to high-impedance state again.
Current, the application of high speed transmission of signals gets more and more, and the distorted signals that the parasitic capacitance of ESD protective device self is larger to be caused high speed transmission of signals, loss impact are also larger.ESD protective device of the prior art utilizes the reverse breakdown principle of PN junction to reach the object of electrostatic protection; what it adopted is semiconductor fabrication process; therefore; this type of ESD protective device often just can reach extra small parasitic capacitance capacitance and leakage current current value (such as, realize being less than the parasitic capacitance capacitance of 0.2pf and be less than the leakage current flow valuve of 100nA) by higher manufacturing cost.In addition, time excessive by the electric current of this type of ESD protective device, ESD device may be caused to burst and form open circuit phenomenon.
Summary of the invention
The embodiment of the present invention provides a kind of processing method of multichannel ESD protective device, to reducing the cost of manufacture of ESD protective device, improving the fail safe of ESD protective device.
The invention provides a kind of processing method of multi-channel electrostatic discharge protective device, can comprise:
First base material processes N number of through hole, and wherein, described N is greater than 2, and described first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between described first conductive layer and described second conductive layer;
By plating and/or chemical plating filled conductive material in described N number of through hole;
Described second conductive layer carries out showing methods, described second conductive layer to be divided into N number of conductive region of not conducting mutually;
Described first conductive layer carries out showing methods and/or process the blind slot being through to described first insulating barrier on described first conductive layer, described first conductive layer to be divided into N number of conductive region of not conducting mutually, wherein, each conductive region in N number of conductive region of described first conductive layer, respectively by the conductive materials in the different through holes in described N number of through hole, from the different conductive region conductings in N number of conductive region of described second conductive layer;
Described first conductive layer arranges the first resin bed;
Described first resin bed arranges protective layer;
Described protective layer processes N-1 the blind hole being through to described first insulating barrier;
Filling paste in a described N-1 blind hole, wherein, N number of conductive region of described first conductive layer comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in described N-1 ungrounded conductive region, connect with described ground connection conductive region respectively by the slurry in the different blind holes in a described N-1 blind hole, wherein, described slurry contains conducting particles and Non-conductive particles;
Described protective layer is peeled off from described first resin bed;
Described first resin bed arranges protection upper body.
Optionally, describedly on the first base material, process N number of through hole, comprising: process N number of through hole by machine drilling or laser drill mode at described first base material.
Optionally, the described blind slot being through to described first insulating barrier that processes on described first conductive layer comprises: on described first conductive layer, process the blind slot being through to described first insulating barrier by mechanical groove milling or laser groove milling mode.
Optionally, described blind slot width is less than or or equals 50 microns.
Optionally, described first base material is copper clad laminate CCL.
Optionally, a described N-1 blind hole, in the some or all of projection in the direction, plate face of described first base material, falls into described blind slot among the projection in the direction, plate face of described first base material.
Optionally, described protection upper body comprises: the second base material and the adhesive layer be arranged on described second base material;
The described protection upper body that arranges on described first resin bed comprises: bonded on described first resin bed described protection upper body by described adhesive layer.
Optionally, described second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described 3rd conductive layer; Wherein, a described N-1 blind hole is in the part or all of projection in the direction, plate face of described first base material, fall into the conductive region of described 3rd conductive layer among the projection in the direction, plate face of described first base material, or, a described N-1 blind hole, in the projection in the direction, plate face of described first base material, overlaps in the projection in the direction, plate face of described first base material with the conductive region of described 3rd conductive layer.
Optionally, described protection upper body comprises: the second base material and the second resin bed be arranged on described second base material and the adhesive layer be arranged on described second resin bed;
Described setting on described first resin bed protects upper body, comprising:
By described adhesive layer, described protection upper body is bonded on described first resin bed.
Optionally, described second base material comprises: the second insulating barrier and the 3rd conductive layer, and wherein, described second resin bed is arranged on described 3rd conductive layer; Wherein, a described N-1 blind hole is in the part or all of projection in the direction, plate face of described first base material, fall into the conductive region of described 3rd conductive layer among the projection in the direction, plate face of described first base material, or, a described N-1 blind hole, in the projection in the direction, plate face of described first base material, overlaps in the projection in the direction, plate face of described first base material with the conductive region of described 3rd conductive layer.
Optionally, described first resin bed is epoxylite layer or phenolic resinoid layer.
Optionally, described second resin bed is epoxylite layer or phenolic resinoid layer.
Optionally, described protective layer is epoxylite layer or acrylic resin.
Therefore; at the multichannel ESD protective device processing scheme of the embodiment of the present invention; the base plate for packaging processing technology that main employing maturity is high or printed wire board machining process processing ESD protective device; but not semiconducter process, be conducive to the difficulty of processing and the manufacturing cost that reduce ESD protective device.Next is the slurry introduced in ESD protective device containing conducting particles and Non-conductive particles, such as, N number of conductive region of the first conductive layer comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in N-1 ungrounded conductive region, connect with above-mentioned ground connection conductive region respectively by the slurry within the different blind holes in N-1 blind hole, so, under normal working voltage, slurry within hole keeps high-impedance state, when voltage exceedes trigger voltage, slurry becomes low resistive state to realize electrostatic protection, and filled therewith is in hole, possess extremely low parasitic capacitance and leakage current, be conducive to the electric capacity of the ESD protective device reducing to process, leakage current (such as, the ESD protective device that embodiment of the present invention scheme processes even can realize being less than the parasitic capacitance capacitance of 0.2pf and being less than the leakage current flow valuve of 100nA), this is to the distorted signals and the loss that reduce such as high frequency/high speed circuit, reduce circuit power consumption, the raising operating efficiency of circuit and the fail safe of ESD protective device work have great importance.Further, the embodiment of the present invention introduces resin material in ESD protective device, is conducive to the manufacture difficulty and the manufacturing cost that reduce ESD protective device further, and then is conducive to the market competitiveness promoting the ESD protective device that embodiment of the present invention scheme processes.Further, the embodiment of the present invention achieves the processing of multichannel ESD protective device, and each road shared grounding end of the ESD protective device processed, be conducive to like this improving working (machining) efficiency further, reduce manufacturing cost.
Term " first ", " second ", " the 3rd " " 4th " etc. (if existence) in specification of the present invention and claims and above-mentioned accompanying drawing are for distinguishing similar object, and need not be used for describing specific order or precedence.Should be appreciated that the data used like this can be exchanged in the appropriate case, so as embodiments of the invention described herein such as can with except here diagram or describe those except order implement.In addition, term " comprises " and " having " and their any distortion, intention is to cover not exclusive comprising, such as, contain those steps or unit that the process of series of steps or unit, method, system, product or equipment is not necessarily limited to clearly list, but can comprise clearly do not list or for intrinsic other step of these processes, method, product or equipment or unit.
For ease of better understanding electrostatic, below simply electrostatic is introduced.
Electrostatic is a kind of natural phenomena of objective reality, and the mode of generation is multiple, as contact, friction, appliance chamber induction etc.The feature of electrostatic be gather for a long time, high voltage, low electricity, small area analysis and action time short feature.Human body self action or the contact with other objects, be separated, and the factors such as friction or induction, can produce the electrostatic of several kilovolts of volts even up to ten thousand.Electrostatic causes serious harm in multiple field.Triboelectrification and static electricity on human body are that two in electronics industry endangers greatly, usually cause electric equipment products fluctuation of service, even damage.In production process, the major measure of electrostatic defending is electrostatic leakage, dissipation, neutralization, humidification, shielding & grounding.Static electricity on human body's guard system mainly contains the compositions such as ESD-preventive wrist strap, ankle band, heel band, work clothes, footgear, cap, gloves or fingerstall, has electrostatic leakage, the functions such as neutralization and shielding.Electrostatic defending work is a long-term system engineering, and the error of any link or careless omission all will cause the failure of electrostatic defending work.
Electrostatic can be described as ubiquitous in daily life, on our body and surrounding just with very high electrostatic potential, several kilovolts of even several ten thousand volts.May know from experience less than the pass by carpet electrostatic of chemical fibre of, people is at ordinary times approximately 35000 volts, and about 7000 volts of plastics specification of browsing, for some sensitive instrumentation, this voltage may be fatal harm.Electrostatics mainly studies electrostatic application technology, as electrostatic precipitation, xerography, electrostatic field etc.More importantly electrostatic defending technology, as the electrostatic hazard of electronics industry, petroleum industry, weapon industry, textile industry, rubber industry and space flight and military field, seek to reduce the loss that causes of electrostatic in recent years along with the develop rapidly of science and technology, the extensive use of microelectric technique and electromagnetic environment become increasingly complex, the Electromagnetic Environmental Effect of static discharge, as electromagnetic interference and emc issue, has become a problem in the urgent need to address.On the one hand, the extensive use of macromolecular material as the goods of plastics or rubber etc. that some resistivity are very high and the high speed of present-day procedure, electrostatic energy is made to run up to very high degree, on the other hand, the production of electrostatic sensitive material and use, as light-end products, gunpowder, solid electronic device etc., department of industrial and mining enterprises is also more and more outstanding by the harm of electrostatic, and electrostatic hazard causes quite serious consequence and loss.The electronic device of costliness can puncture by inadvertently, causes electronics industry year to lose and reaches multi-billion dollar.
ESD is exactly the quick neutralization of electric charge, and the electronics industry every year expense of flower on this has more than multi-million dollar.All materials, all by atomic building, have electronics and proton in atom.When material obtain or when losing electronics, it will lose electric equilibrium and become electronegative or positive electricity, positive charge or negative electrical charge accumulate on material surface will make electrostatic on object band.Charge accumulated produces because material contacts with each other separation usually, also can be caused by friction, is called triboelectrification.There are many factors can affect the accumulation of electric charge, comprise contact, coefficient of friction and separating rate etc.Electrostatic charge can constantly accumulation until the effect stopping, the electric charge that cause electric charge to produce are released or are reached enough intensity and can be punctured ambient substance.After dielectric is breakdown, electrostatic charge can be balanced very soon, and the quick neutralization of this electric charge is just called static discharge.Due to discharge voltage quick on very little resistance, vent discharge fails to be convened for lack of a quorum very large, may more than 20 amperes, if this electric discharge is undertaken by integrated circuit or other Electrostatic Discharge Sensitives, so large electric current causes serious harm to the circuit being designed to only conducting microampere or milliampere level electric current.
Wherein, multiple model can be had to can be used to statement device and how to suffer damage, such as manikin, machine mould, Charged Device Model and electric field are on the impact etc. of device.Wherein, such as, for automatic assembly equipment, the rear three kinds of damage models of main consideration.Such as, machine mould/pattern, automatic assembly equipment uses guide rail, driving-belt, slideway, element conveyer and other devices to carry out moving device, make it to move by the direction of technological requirement, if equipment de-sign is improper, driving-belt and delivery system may accumulate a large amount of electric charge, and these electric charges will be released by device in technical process.Equipment unit is discharged by device and is just called machine mould/pattern.Charged Device Model/pattern, if a device have accumulated electric charge because of certain reason and contacts with a charged few surface, electric charge will be released by the current-carrying part on device.When device discharges to other materials, be just called charged device model, represent with Charged Device Model.Electric field influence, electric field induction can produce potential difference between the resistive circuit of IC, causes insulator dielectric breakdown.Cause the Another reason of inefficacy to be that electric charge on device in the electric field can be polarized, thus produce potential difference and anisotropy charge discharge, form dual electric discharge or neutralization.Can use the material with different resistance characteristic in ESD controls, these materials are used in automatic assembly equipment can obtain desirable effect.
And ESD protective device special in E-consumer class, digital product.Operation principle is in electrical equipment course of normal operation, and ESD protective device just shows as low capacitance (being generally less than 5pf) capacitive reactance characteristic, can not have an impact, and can not have influence on signal and the transfer of data of electronic product to the normal opering characteristic of electric apparatus; When the overvoltage at device two ends reaches predetermined breakdown voltage, (may nanosecond be reached) rapidly and make a response, pass through with leakage current between the amount amplifying stage of geometric progression, thus reach absorption, weaken electrostatic to the interference of circuit characteristic and impact.Meanwhile, due to the particularity of the formation material of ESD protective device, ESD protective device is all often by absorbing electrostatic and dissipating, that is the process showing as a discharge and recharge reaches and carries out electrostatic defending to equipment.
Processing method embodiment of multi-channel electrostatic discharge protective device of the present invention, wherein, a kind of processing method of multi-channel electrostatic discharge protective device can comprise: on the first base material, process N number of through hole, wherein above-mentioned N is greater than 2, and the first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between the first conductive layer and the second conductive layer; By plating and/or chemical plating filled conductive material in above-mentioned N number of through hole; Second conductive layer carries out showing methods, the second conductive layer to be divided into N number of conductive region of not conducting mutually; First conductive layer carries out showing methods and/or on the first conductive layer, processes the blind slot being through to the first insulating barrier, the first conductive layer to be divided into N number of conductive region of not conducting mutually, each conductive region in N number of conductive region of wherein the first conductive layer, respectively by the conductive materials in the different through holes in above-mentioned N number of through hole, from the different conductive region conductings in N number of conductive region of the second conductive layer; First conductive layer arranges the first resin bed; First resin bed arranges protective layer; Above-mentioned protective layer processes N-1 the blind hole being through to the first insulating barrier; Filling paste in an above-mentioned N-1 blind hole, wherein N number of conductive region of the first conductive layer comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in above-mentioned N-1 ungrounded conductive region, connect with above-mentioned ground connection conductive region respectively by the slurry in the different blind holes in an above-mentioned N-1 blind hole, wherein, above-mentioned N-1 is more than or equal to above-mentioned N-1, and above-mentioned slurry contains conducting particles and Non-conductive particles; Above-mentioned protective layer is peeled off from the first resin bed; First resin bed arranges protection upper body.
Refer to Fig. 1, the schematic flow sheet of the processing method of a kind of multi-channel electrostatic discharge protective device that Fig. 1 provides for the embodiment of the present invention.As shown in Figure 1, a kind of processing method of multi-channel electrostatic discharge protective device that the embodiment of the present invention provides can comprise following content:
101, on the first base material, process N number of through hole, wherein, above-mentioned N is greater than 2, and the first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between the first conductive layer and the second conductive layer.
In some embodiments of the invention, such as, by machine drilling or laser drill mode (or other processing mode), N number of through hole is processed at the first base material.
Be understandable that, the N in the embodiment of the present invention can value 2,3,4,5,6,7,8 or other larger value.
Wherein, the first base material can be the substrate of copper clad laminate (CCL, copper clad laminate) or other type.Wherein, the first insulation layers is as the insulation material layer of the resin bed or other type that can be epoxylite layer or phenolic resinoid layer or other type of resin material.
102, by plating and/or chemical plating filled conductive material in above-mentioned N number of through hole.
In some embodiments of the invention, by plating and/or chemical plating in above-mentioned N number of through hole while filled conductive material, the conductive materials of the first conductive layer and the second conductive layer may be thickened, if without the need to the conductive materials thickening the first conductive layer and/or the second conductive layer, before the step above by plating and/or chemical plating filled conductive material in above-mentioned N number of through hole, on the first conductive layer and/or the second conductive layer, plating resist film can be pasted in other region, and expose above-mentioned N number of through hole.
Be appreciated that interconnected to form interlayer, be conducive to formation precision interconnected between good key-course like this, comparatively prior art improves a lot in precision by plating and/or chemical plating filled conductive material in N number of through hole.
103, on the second conductive layer, showing methods is carried out, the second conductive layer to be divided into N number of conductive region of not conducting mutually.
In some embodiments of the invention, such as, by chemical etching or laser ablation (or other possible processing mode), the second conductive layer carries out showing methods, the second conductive layer to be divided into N number of conductive region of not conducting mutually.Wherein, the area of this N number of conductive region of the second conductive layer may be equal or part is equal, or the area of each conductive region in this N number of conductive region of the second conductive layer also can be each unequal.
104, on the first conductive layer, carry out showing methods and/or on the first conductive layer, process the blind slot being through to the first insulating barrier, the first conductive layer to be divided into N number of conductive region of not conducting mutually, each conductive region in above-mentioned N number of conductive region of wherein the first conductive layer, respectively by the conductive materials in the different through holes in above-mentioned N number of through hole, from the different conductive region conductings in above-mentioned N number of conductive region of the second conductive layer.
Wherein, such as, conductive region t11 in above-mentioned N number of conductive region of the first conductive layer, by the conductive materials in the through hole k1 in above-mentioned N number of through hole, with the conductive region t21 conducting in above-mentioned N number of conductive region of the second conductive layer, wherein, conductive region t11 is any one conductive region in above-mentioned N number of conductive region of the first conductive layer, through hole k1 is any one through hole in above-mentioned N number of through hole, and conductive region t21 is any one conductive region in above-mentioned N number of conductive region of the second conductive layer.And in some embodiments of the invention, conductive region t11 is yet by the conductive materials in through hole k2 and conductive region t21 conducting, wherein, through hole k2 is different from any one through hole in above-mentioned N number of through hole, that is, conductive region t11 by the conductive materials in one or more through hole (as through hole k1 and through hole k2) and conductive region t21 conducting, to improve reliability.Be understandable that, conductive region t11 in above-mentioned N number of conductive region of the first conductive layer only with the conductive region t21 conducting in above-mentioned N number of conductive region of the second conductive layer, and can not with other any one the conductive region conducting in above-mentioned N number of conductive region of the second conductive layer.Certainly, each through hole of the conductive region of conducting first conductive layer and the conductive region of the second conductive layer is non-intersect.
In some embodiments of the invention, if by carrying out showing methods on the first conductive layer, the first conductive layer to be divided into N number of conductive region of not conducting mutually, then such as chemical etching or laser ablation (or other possible processing mode) can be passed through, first conductive layer carries out showing methods, the first conductive layer to be divided into N number of conductive region of not conducting mutually.Wherein, the area of this N number of conductive region of the first conductive layer may be equal or part is equal, or the area of each conductive region in this N number of conductive region of the first conductive layer also can be each unequal.
In other embodiments of the present invention, if by processing the blind slot being through to the first insulating barrier on the first conductive layer, the first conductive layer to be divided into N number of conductive region of not conducting mutually, then such as by mechanical groove milling or laser groove milling mode (or other processing mode), first conductive layer processes the blind slot being through to the first insulating barrier, the first conductive layer to be divided into N number of conductive region of not conducting mutually, wherein the area of this N number of conductive region of the first conductive layer may be equal or part is equal, or first conductive layer this N number of conductive region in the area of each conductive region also can be each unequal.Wherein, the width of above-mentioned blind slot can be less than 50 microns or wider or narrower.Wherein, the surface that such as may extend into the first insulating barrier in above-mentioned blind slot or the inside of the first insulating barrier.
In some embodiments of the invention, also showing methods can be carried out on the first conductive layer, and on the first conductive layer, process the blind slot being through to the first insulating barrier, the first conductive layer to be divided into N number of conductive region of not conducting mutually, that is, the N number of conductive region the first conductive layer to be divided into not conducting is mutually coordinated by showing methods and blind slot processing.Wherein, the surface that such as may extend into the first insulating barrier in above-mentioned blind slot or the inside of the first insulating barrier.
105, the first resin bed is set on the first conductive layer.
In some embodiments of the invention, by modes such as pressing, printing or coatings, the first resin bed is set on the first conductive layer.If be appreciated that the blind slot having processed on the first conductive layer and be through to the first insulating barrier, then the part resin of the first resin bed can be filled among the above-mentioned blind slot being through to the first insulating barrier processed.
In some embodiments of the invention, the first resin bed such as can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.
106, protective layer is set on the first resin bed.
In some embodiments of the invention, by modes such as pressing, printing or coatings, protective layer is set on the first resin bed.Wherein, above-mentioned protective layer such as can be, the protective material of epoxylite layer or acrylic resin or other type.In actual applications, selected protective layer material such as has good peelable characteristic, this protective layer can be peeled off from the second insulating barrier is convenient so that follow-up.
107, on above-mentioned protective layer, process N-1 the blind hole being through to the first insulating barrier.
In some embodiments of the invention, such as, by machine drilling or laser drill mode (or other possible processing mode), above-mentioned protective layer processes N-1 the blind hole being through to above-mentioned first insulating barrier.Wherein, the part or all of blind hole in an above-mentioned N-1 blind hole such as may extend into the surface of the first insulating barrier, or the part or all of blind hole in an above-mentioned N-1 blind hole such as may extend into the inside of the first insulating barrier.
108, filling paste in an above-mentioned N-1 blind hole, wherein, N number of conductive region of the first conductive layer comprises ground connection conductive region (namely for the conductive region of ground connection) and N-1 ungrounded conductive region, each ungrounded conductive region in above-mentioned N-1 ungrounded conductive region, connect with above-mentioned ground connection conductive region respectively by the slurry in the different blind holes in an above-mentioned N-1 blind hole, wherein, above-mentioned slurry contains conducting particles and Non-conductive particles.
Wherein, such as, ungrounded conductive region t11 in above-mentioned N-1 ungrounded conductive region of the first conductive layer, by the slurry in the blind hole mk1 in an above-mentioned N-1 blind hole, with the above-mentioned ground connection conductive region conducting of the first conductive layer, wherein, ungrounded conductive region t11 is above-mentioned N-1 ungrounded any one ungrounded conductive region of leading in conductive region of the first conductive layer, and blind hole mk1 is any one blind hole in an above-mentioned N-1 blind hole.And in some embodiments of the invention, ungrounded conductive region t11 yet connects with the above-mentioned ground connection conductive region conducting of the first conductive layer by the slurry in blind hole mk2, wherein blind hole mk2 is different from any one blind hole in an above-mentioned N-1 blind hole.That is, ungrounded conductive region t11 connects with ground connection conductive region by the slurry in one or more blind hole (as blind hole mk1 and blind hole mk2), to improve reliability.Be appreciated that any two ungrounded conductive regions in above-mentioned N-1 ungrounded conductive region of the first conductive layer, do not connected by the slurry in blind hole.
Wherein, can comprise silicones and/or epoxylite etc. in slurry, certain slurry also can comprise other Non-conductive particles.Under normal working voltage, the slurry in hole keeps high-impedance state, and when voltage exceedes trigger voltage, slurry becomes low resistive state to realize electrostatic protection; namely; the resistance value of slurry may be different under different voltage, and when magnitude of voltage crosses trigger voltage, slurry resistance-variable is little.Filled therewith is in hole; possess extremely low parasitic capacitance and leakage current; be conducive to electric capacity and the leakage current of the ESD protective device reducing to process, this to reducing the distorted signals of such as high frequency/high speed circuit and loss, reduce circuit power consumption, the fail safe of the operating efficiency improving circuit and ESD protective device work has great importance.
In actual applications, dissimilar slurry can be selected as required, with satisfied different trigger voltage protection needs.Wherein, slurry contains conducting particles and Non-conductive particles, and wherein, Non-conductive particles such as can comprise: silicones, epoxy resin or other Available Material.Conducting particles can be such as the metal dust (as copper powder, silver powder or other metallic conductor) or oxide etc. (as conductive various metal oxides etc.) of micron order (or greater or lesser).Certainly, the additive etc. of conducting particles and/or Non-conductive particles can also be comprised in slurry.
Silicones is briefly described below, and silicones typically refers to the class be made up of silica structure unit and is subject to heat solidifiable and forms the resin of tridimensional network.Silicones has highly cross-linked cancellated polysiloxane, has the double grading of organic resin and inorganic material concurrently.Normally use the various mixtures of methyl trichlorosilane, dimethyldichlorosilane, phenyl trichlorosilane, diphenyl dichlorosilane or dichloromethyl phenylsilane, at organic solvent as under toluene existence, hydrolyzable at a lower temperature, obtains acidic hydrolysis thing.The initial product of hydrolysis be ring-type, line style with the mixture of cross-linked polymer, usually also containing considerable hydroxyl.Hydrolysate is through washing except disacidify, and neutral first condensation polymer is thermal oxidation or polycondensation further in the presence of a catalyst in air, the dimensional network structure that last height of formation is crosslinked.Silicones is a kind of heat cured plastics, and one of performance that it is the most outstanding is excellent thermo oxidative stability.250 DEG C of heating are after 24 hours, and silicones weightlessness is only 2 ~ 8%.Another outstanding performance of silicones is excellent electrical insulation capability, and it all can keep its good insulation property in wide temperature and frequency range.
The classification silicones of silicones be with silicon-oxygen-silicon for main chain, silicon atom is connected with half inorganic polymer of the cross-linking type of organic group.It has outstanding weatherability along with direct method produces organic silicon monomer silicones, be any one organic resin too far behind to catch up, even if under ultraviolet acute irradiation, silicones is resistance to yellowing also.Silicone resin adhesive organic silicon adhesive by raw material sources can be divided into silicones be base-material adhesive and take silicon rubber as the adhesive of base-material, wherein, the former is mainly used in Bonding Metal and the metal bonding performance of heat resistant silicone to iron, aluminium and tin and so on is good, also easily glueds joint glass and pottery.
Wherein, silicones type comprises following kind: methyl phenyl silicone resin, methyl silicon resin, low phenyl methyl silicones, silicone resin emulsion, self-drying type organic siliconresin, high temperature modification organic siliconresin, epoxy modified silicone resin, organosilicon polyester modified resin, self-drying type environmental protection organic siliconresin, environment-protecting silicone resin, non-viscous paint organic siliconresin, high light organic siliconresin, benzyl transparent silicon resin, methyl transparent organic silicon resin, the bonding silicones of mica, poly-methyl silicon resin, amino silicone, fluorine silicon resin, silicon resin solution, silicone-epoxy resin, organic silicon polyester resin, solvent-resisting organic siliconresin, organic silicon resin adhesive, fluorine silicon resin Silicone Sealants, high-temperature resisting methyl silicones, self-drying type organic silicon insulating varnish, methyl MQ silicones, Vinyl MQ silicon resin, organosilicon acrylic resin coating etc.
109, above-mentioned protective layer is peeled off from the first resin bed.
110, protection upper body is set on the first resin bed.
Wherein, by multiple possible mode, protection upper body is arranged on the first resin bed.One of object that first resin bed arranges protection upper body is slurry in protection first resin bed, the first conductive layer and N-1 blind hole etc.Be appreciated that the structure protecting upper body can be diversified.
In some embodiments of the invention, above-mentioned protection upper body comprises: the second base material and the adhesive layer be arranged on the second base material.Wherein, the first resin bed is arranged protection upper body to comprise: by above-mentioned adhesive layer, above-mentioned protection upper body is bonded on the first resin bed.In such a scenario, such as, the second base material can comprise the second insulating barrier and the 3rd conductive layer (wherein, the 3rd conductive layer such as can be the conductive layer of layers of copper or other material), and wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Or, second base material can comprise the second insulating barrier, the 3rd conductive layer and the 4th conductive layer (wherein the 3rd conductive layer and the 4th conductive layer such as can be the conductive layer of layers of copper or other material), wherein, second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, above-mentioned adhesive layer is arranged on the 3rd conductive layer.Wherein, an above-mentioned N-1 blind hole is in the part or all of projection in the direction, plate face of the first base material, the conductive region of the 3rd conductive layer can be fallen among the projection in the direction, plate face of the first base material, or, an above-mentioned N-1 blind hole, in the projection in the direction, plate face of the first base material, can overlap with the projection of the conductive region of the 3rd conductive layer in the direction, plate face of the first base material.Such as the 3rd conductive layer can comprise multiple conductive region (such as comprising N-1 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If the second base material comprises the 3rd conductive layer (wherein because the 3rd conductive layer has certain mechanical strength usually); then when protection upper body is pressed on the first resin bed; 3rd conductive layer can play certain protective effect to the slurry in an above-mentioned N-1 blind hole; if the second insulating barrier has enough mechanical strengths certainly, then the 3rd conductive layer also can omit.
In other embodiments of the present invention, above-mentioned protection upper body can comprise the second base material and the second resin bed of being arranged on the second base material and the adhesive layer be arranged on the second resin bed.Wherein, the first resin bed is arranged protection upper body such as can comprise: by above-mentioned adhesive layer, above-mentioned protection upper body is bonded on the first resin bed.In such a scenario, such as, second base material can comprise: the second insulating barrier and the 3rd conductive layer are (wherein, 3rd conductive layer such as can be the conductive layer of layers of copper or other material), wherein, second resin bed is arranged on the 3rd conductive layer, or, second base material can comprise the second insulating barrier, 3rd conductive layer and the 4th conductive layer are (wherein, 3rd conductive layer and the 4th conductive layer such as can be the conductive layer of layers of copper or other material), wherein, second insulating barrier is between the 3rd conductive layer and the 4th conductive layer, wherein, second resin bed is arranged on the 3rd conductive layer.Wherein, an above-mentioned N-1 blind hole, in the part or all of projection in the direction, plate face of the first base material, can fall into the conductive region of the 3rd conductive layer among the projection in the direction, plate face of the first base material; Or an above-mentioned N-1 blind hole, in the projection in the direction, plate face of the first base material, can overlap with the projection of the conductive region of the 3rd conductive layer in the direction, plate face of the first base material.Such as, the 3rd conductive layer can comprise multiple conductive region (such as can comprise N-1 conductive region), and the area of each conductive region all can be greater than or equal to the cross-sectional area of a blind hole.If the second base material comprises the 3rd conductive layer (the 3rd conductive layer has certain mechanical strength usually); then when protection upper body is pressed on the first resin bed; 3rd conductive layer can play certain protective effect to the slurry in an above-mentioned N-1 blind hole; certainly; if the second insulating barrier has enough mechanical strengths, then the 3rd conductive layer also can omit.
In some embodiments of the invention, the first resin bed such as can be the resin bed of epoxylite layer or phenolic resinoid layer or other type of resin material.Second insulation layers is as the insulation material layer of the resin bed or other type that can be epoxylite layer or phenolic resinoid layer or other type of resin material.Wherein, the second base material such as can be the substrate of CCL or other type.
For ease of better understanding and implement the such scheme of the embodiment of the present invention, carry out application scenarios citing below in conjunction with accompanying drawing.
Please also refer to Fig. 2 ~ Figure 27, wherein, a kind of machining sketch chart of electrostatic discharge protection device that provides for the embodiment of the present invention of Fig. 2 ~ Figure 27.
Fig. 2 shows the one citing structure of the first base material 200.Wherein, the first base material 200 comprises the first conductive layer 201, first insulating barrier 202 and the second conductive layer 203, and wherein, the first insulating barrier 202 is between the first conductive layer 201 and the second conductive layer 203.
Fig. 3 illustrates and got out N number of through hole 204 on the first base material 200.Mainly equal 6 for N in accompanying drawing, certainly in actual applications, N can for any positive integer being greater than 2.
Fig. 4 is the elevational schematic view of the first base material 200 got out after N number of through hole 204.
Fig. 5 shows the filled conductive material 205 in N number of through hole 204 by chemical plating and/or plating.
Fig. 6 shows and carry out showing methods on the second conductive layer 203 of the first base material 200, the first conductive layer 201 has been divided into N number of conductive region of not conducting mutually.
Fig. 7 shows and carry out showing methods on the first conductive layer 201 of the first base material 200.
Fig. 8 shows and process the blind slot 206 being through to the first insulating barrier 202 on the first conductive layer 201 of the first base material 200, the first conductive layer 201 to be divided into N number of conductive region of not conducting mutually.
Wherein, each conductive region in above-mentioned N number of conductive region of the first conductive layer 201, respectively by the conductive materials 205 in the different through holes in above-mentioned N number of through hole 204, from the different conductive region conductings in above-mentioned N number of conductive region of the second conductive layer 203.
Fig. 9 is the tangent plane schematic diagram after processing Fig. 6 ~ Fig. 9 Suo Shi, wherein, Fig. 9 illustrates that blind slot 206 is through to the inside of the first insulating barrier 202, certainly, under other application scenarios, blind slot 206 also only can be through to the surface of the first insulating barrier 202 and not extend to the inside of the first insulating barrier 202.
Figure 10 illustrates that on the first conductive layer 201, arrange the first resin bed 207 shown in the first resin bed 207, Figure 10 fills by blind slot 206 with.
Figure 11 illustrates and arrange protective layer 208 on the first resin bed 207.
Figure 12 illustrates N-1 the blind hole 209 processing on protective layer 208 and be through to the first insulating barrier 202.Wherein, N-1 the blind hole 209 processed shown in Figure 12, in the part or all of projection in the direction, plate face of the first base material, falls into blind slot 206 among the projection in the direction, plate face of the first base material.
Figure 13 illustrates filling paste 210 in N-1 blind hole 209.Wherein, each ungrounded conductive region in N-1 ungrounded conductive region of the first conductive layer 201, connects with ground connection conductive region (Fig. 8 and Fig. 9 gets the bid and show ground connection conductive region 2011) respectively by the slurry 210 in the different blind holes in an above-mentioned N-1 blind hole 209.
Figure 14 illustrates and is being peeled off from the first resin bed 207 by protective layer 208, and wherein, Figure 14 illustrates that part size 210 has also been stripped, and so far, the lower body of ESD protective device machines.
Figure 15 is the schematic top plan view of structure shown in Figure 14.
Figure 16 ~ Figure 22 shows the processing mode of two kinds of protection upper bodies of ESD protective device of having illustrated out.
Wherein, the one citing structure of second substrate 300 shown in Figure 16.Wherein, the second base material 300 comprises the 4th conductive layer 301, second insulating barrier 302 and the 3rd conductive layer 303, and wherein, the second insulating barrier 302 is between the 4th conductive layer 301 and the 3rd conductive layer 303.
Figure 17 illustrates and carry out showing methods on the 3rd conductive layer 303 of second substrate 300.
Figure 18 illustrates the elevational schematic view carry out showing methods on the 3rd conductive layer 303 after, and wherein the 3rd conductive layer 303 is split into N-1 conductive region of not conducting mutually.
Figure 19 illustrates and arrange the second resin bed 304 on the 3rd conductive layer 303.
Figure 20 illustrates and arrange adhesive layer 305 on the second resin bed 304.
Figure 21 illustrates and mill out the blind slot that (such as, by laser groove milling mode or mechanical groove milling mode) is through to the 3rd conductive layer 303 on adhesive layer 305, to expose the part or all of conductive region of the 3rd conductive layer 303.So far, the one protection upper body of ESD protective device machines.Figure 16 ~ Figure 21 shows the protection upper body processing and comprise the second resin bed 304.
Figure 16 ~ Figure 18, and Figure 22 illustrates the protection upper body processing and do not comprise the second resin bed 304.
Figure 22 shows on the basis of structure shown in Figure 18, arranges adhesive layer 305 further on the 3rd conductive layer 303, and so far, the another kind protection upper body of ESD protective device machines.Wherein, the 4th conductive layer 301 in the upper body of protection shown in Figure 22 and the 3rd conductive layer 303 all can omit; namely the second base material 300 can be the second insulating barrier 302, and can obtain the one protection upper body of ESD protective device arrange adhesive layer 305 on the second insulating barrier 302 after.
Figure 23 illustrates and protects upper body by shown in Figure 21, bonds on the lower body of the ESD protective device shown in Figure 15, obtains a kind of ESD protective device of structure.Figure 24 is the schematic diagram of the ESD protective device dispensed on the basis of structure shown in Figure 23 after the 4th conductive layer 301.Wherein, the blind hole of above-mentioned N-1 shown in Figure 23 209 is in the projection in the direction, plate face of the first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection in the direction, plate face of the first base material 200, i.e. the area of each conductive region in N-1 conductive region of the 3rd conductive layer all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then when protection upper body is pressed on the first resin bed 207; 3rd conductive layer 303 can play certain protective effect to the slurry 210 in an above-mentioned N-1 blind hole 209; certainly; if the second insulation; 302 have enough mechanical strengths, then the 3rd conductive layer 303 also can omit.Wherein, slurry 210 shown in Figure 23 and there is between the 3rd conductive layer 303 space (this space can be airtight or unsealed space).
Figure 25 illustrates and protects upper body by shown in Figure 22, bonds on the lower body of the ESD protective device shown in Figure 15, obtains the ESD protective device of another kind of structure.Figure 26 is the ESD protective device schematic diagram omitted on the basis of structure shown in Figure 25 after the 4th conductive layer 301.Wherein, the blind hole of above-mentioned N-1 shown in Figure 24 209 is in the projection in the direction, plate face of the first base material 200, fall into the conductive region of the 3rd conductive layer 303 among the projection in the direction, plate face of the first base material 200, i.e. the area of each conductive region in N-1 conductive region of the 3rd conductive layer all can be greater than or equal to the cross-sectional area of a corresponding blind hole 209.Because the 3rd conductive layer 303 has certain mechanical strength usually; then when protection upper body is pressed on the first resin bed 207; 3rd conductive layer 303 can play certain protective effect to the slurry 210 in an above-mentioned N-1 blind hole 209; certainly; if the second insulation 302 has enough mechanical strengths, then the 3rd conductive layer 303 also can omit.Figure 27 is the schematic diagram omitting the ESD protective device after the 3rd conductive layer 302 on the basis of structure shown in Figure 26.
Be understandable that, the structure of the protection upper body of ESD protective device is not limited to illustrate in figure.
Be appreciated that the ESD protective device processing mode shown in Fig. 2 ~ Figure 27 is only citing, also can do the adjustment of flexible suitability in actual applications.
Therefore; at the ESD protective device processing scheme that the embodiment of the present invention provides; the base plate for packaging processing technology that main employing maturity is high or printed wire board machining process processing ESD protective device; but not semiconducter process, be conducive to the difficulty of processing and the manufacturing cost that reduce ESD protective device.Next is the slurry introduced in ESD protective device containing conducting particles and Non-conductive particles, such as, N number of conductive region of the first conductive layer comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in N-1 ungrounded conductive region, connect with above-mentioned ground connection conductive region respectively by the slurry within the different blind holes in N-1 blind hole, so, under normal working voltage, slurry within hole keeps high-impedance state, when voltage exceedes trigger voltage, slurry becomes low resistive state to realize electrostatic protection, and filled therewith is in hole, possess extremely low parasitic capacitance and leakage current, be conducive to the electric capacity of the ESD protective device reducing to process, leakage current (such as, the ESD protective device that embodiment of the present invention scheme processes even can realize being less than the parasitic capacitance capacitance of 0.2pf and being less than the leakage current flow valuve of 100nA), this is to the distorted signals and the loss that reduce such as high frequency/high speed circuit, reduce circuit power consumption, the raising operating efficiency of circuit and the fail safe of ESD protective device work have great importance.Further, the embodiment of the present invention introduces resin material in ESD protective device, is conducive to the manufacture difficulty and the manufacturing cost that reduce high ESD protective device further, and then is conducive to the market competitiveness promoting the ESD protective device that embodiment of the present invention scheme processes.Further, the embodiment of the present invention realizes multichannel ESD protective device (comprising N-1 protection branch road) processing, and each road shared grounding end of the ESD protective device processed, be conducive to like this improving working (machining) efficiency further, reduce manufacturing cost.
The embodiment of the present invention also provides multichannel ESD protective device.The citing structure of multichannel ESD protective device can shown in one width as any in Figure 23 ~ Figure 27.
Wherein, multichannel ESD protective device, can comprise:
The lower body structure of the lower body (can as shown in figure 14) and protection upper body,
Wherein, lower body can comprise: the first base material and the first resin bed 207, wherein, first base material comprises the first conductive layer 201, second conductive layer 203 and the first insulating barrier 202 between the first conductive layer 201 and the second conductive layer 203, first resin bed 207 is arranged on the first conductive layer 201, first base material is processed with N number of hole, conductive materials 205 is filled with in above-mentioned N number of hole, second conductive layer 203 comprises N number of conductive region of not conducting mutually, and the first conductive layer comprises N number of conductive region of not conducting mutually.
Wherein, each conductive region in N number of conductive region of the first conductive layer, respectively by the conductive materials 205 in the different through holes in above-mentioned N number of hole, from the different conductive region conductings in N number of conductive region of the second conductive layer; Wherein, above-mentioned lower body also has N-1 the hole being through to the first insulating barrier 202 from the first resin bed 207, above-mentioned N-1 is filled with slurry 210 in a hole, N number of conductive region of the first conductive layer 201 comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in above-mentioned N-1 ungrounded conductive region, connects with above-mentioned ground connection conductive region respectively by the slurry in the different holes in an above-mentioned N-1 hole, wherein, above-mentioned slurry contains conducting particles and Non-conductive particles
Above-mentioned protection upper body is arranged on the first resin bed 207.
In some embodiments of the invention, the first base material also has the groove being through to the first insulating barrier 202 from the first conductive layer 201.Concrete structure can groove 206 as shown in Figure 8 and Figure 9.
In some embodiments of the invention, the width of above-mentioned groove can be less than or equal to 50 microns, certainly also can be wider or narrower.
In some embodiments of the invention, the first base material can be the substrate of copper clad laminate CCL or other type.
In some embodiments of the invention, an above-mentioned N-1 hole, in the part or all of projection in the direction, plate face of the first base material, falls into above-mentioned groove among the projection in the direction, plate face of the first base material.
In some embodiments of the invention, above-mentioned protection upper body comprises: the second base material and the adhesive layer (concrete structure can as shown in figure 22, and wherein, the 3rd conductive layer 303 and/or the 4th conductive layer 301 of the second base material can omit) be arranged on the second base material.As shown in Figure 25 ~ 27, above-mentioned protection upper body bonds on the first resin bed 207 by above-mentioned adhesive layer 305.
Such as, the second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein above-mentioned adhesive layer is arranged on the 3rd conductive layer; Wherein, an above-mentioned N-1 hole is in the part or all of projection in the direction, plate face of the first base material, fall into the conductive region of the 3rd conductive layer among the projection in the direction, plate face of the first base material, or, an above-mentioned N-1 hole, in the projection in the direction, plate face of the first base material, overlaps in the projection in the direction, plate face of the first base material with the conductive region of the 3rd conductive layer.
In other embodiments of the present invention, above-mentioned protection upper body comprises: the second base material and the second resin bed 304 be arranged on the second base material and the adhesive layer 305 be arranged on the second resin bed 304; Above-mentioned protection upper body is bonded on the first resin bed 207 by above-mentioned adhesive layer 305.
Such as, the second base material comprises: the second insulating barrier 302 and the 3rd conductive layer 303, and wherein, the second resin bed 302 is arranged on the 3rd conductive layer 303; Wherein, an above-mentioned N-1 hole is in the part or all of projection in the direction, plate face of the first base material, fall into the conductive region of the 3rd conductive layer 303 among the projection in the direction, plate face of the first base material, or, an above-mentioned N-1 hole, in the projection in the direction, plate face of the first base material, overlaps in the projection in the direction, plate face of the first base material with the conductive region of the 3rd conductive layer.Wherein, slurry 210 shown in Figure 23 and there is between the 3rd conductive layer 303 space (wherein, this space can be airtight or unsealed space).
Optionally, the first resin bed and/or the second resin bed such as can be epoxylite layer or phenolic resinoid layer or other available resin bed.
Available understanding, the multichannel ESD protective device of the structure of citing shown in Figure 23 ~ Figure 27, can process with the processing mode based on said method embodiment and obtain, and certainly also obtains by other similar processing mode processing.For the situation of other viewing angle of the multichannel ESD protective device of structure of illustrating Figure 23 ~ Figure 27 Suo Shi, see the associated description of Fig. 2 ~ Figure 22 and above-described embodiment, can repeat no more herein.
It should be noted that, for aforesaid each embodiment of the method, in order to simple description, therefore it is all expressed as a series of combination of actions, but those skilled in the art should know, the present invention is not by the restriction of described sequence of movement, because according to the present invention, some step can adopt other orders or carry out simultaneously.Secondly, those skilled in the art also should know, the embodiment described in specification all belongs to preferred embodiment, and involved action and module might not be that the present invention is necessary.In the above-described embodiments, the description of each embodiment is all emphasized particularly on different fields, in certain embodiment, there is no the part described in detail, can see the associated description of other embodiments.
Above the processing method of the multi-channel electrostatic discharge protective device that the embodiment of the present invention provides is described in detail, apply specific case herein to set forth principle of the present invention and execution mode, the explanation of above embodiment just understands method of the present invention and core concept thereof for helping; Meanwhile, for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, to sum up, this description should not be construed as limitation of the present invention.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet that the embodiment of the present invention provides a kind of processing method of multi-channel electrostatic discharge protective device;
The machining sketch chart of the multi-channel electrostatic discharge protective device that Fig. 2 ~ Figure 27 provides for the embodiment of the present invention.
Embodiment
The embodiment of the present invention provides a kind of processing method of electrostatic discharge protection device, to reducing the cost of manufacture of ESD protective device, improving the fail safe of ESD protective device.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Claims (10)
1. a processing method for multichannel Electro-static Driven Comb ESD protective device, is characterized in that, comprising:
First base material processes N number of through hole, and wherein, described N is greater than 2, and described first base material comprises the first conductive layer, the second conductive layer and the first insulating barrier between described first conductive layer and described second conductive layer;
By plating and/or chemical plating filled conductive material in described N number of through hole;
Described second conductive layer carries out showing methods, described second conductive layer to be divided into N number of conductive region of not conducting mutually;
Described first conductive layer carries out showing methods and/or process the blind slot being through to described first insulating barrier on described first conductive layer, described first conductive layer to be divided into N number of conductive region of not conducting mutually, wherein, each conductive region in N number of conductive region of described first conductive layer, respectively by the conductive materials in the different through holes in described N number of through hole, from the different conductive region conductings in N number of conductive region of described second conductive layer;
Described first conductive layer arranges the first resin bed;
Described first resin bed arranges protective layer;
Described protective layer processes N-1 the blind hole being through to described first insulating barrier;
Filling paste in a described N-1 blind hole, wherein, N number of conductive region of described first conductive layer comprises ground connection conductive region and N-1 ungrounded conductive region, each ungrounded conductive region in described N-1 ungrounded conductive region, connect with described ground connection conductive region respectively by the slurry in the different blind holes in a described N-1 blind hole, wherein, described slurry contains conducting particles and Non-conductive particles;
Described protective layer is peeled off from described first resin bed;
Described first resin bed arranges protection upper body.
2. method according to claim 1, is characterized in that,
Describedly on the first base material, process N number of through hole, comprising: process N number of through hole by machine drilling or laser drill mode at described first base material.
3. method according to claim 1, it is characterized in that, the described blind slot being through to described first insulating barrier that processes on described first conductive layer comprises: on described first conductive layer, process the blind slot being through to described first insulating barrier by mechanical groove milling or laser groove milling mode.
4. method according to claim 3, is characterized in that,
Described blind slot width is less than or equal to 50 microns.
5. method according to claim 1, is characterized in that,
Described first base material is copper clad laminate CCL.
6. the method according to any one of claim 1 to 5, is characterized in that, a described N-1 blind hole, in the part or all of projection in the direction, plate face of described first base material, falls into described blind slot among the projection in the direction, plate face of described first base material.
7. method according to claim 6, is characterized in that,
Described protection upper body comprises: the second base material and the adhesive layer be arranged on described second base material;
The described protection upper body that arranges on described first resin bed comprises: bonded on described first resin bed described protection upper body by described adhesive layer.
8. method according to claim 7, is characterized in that, described second base material comprises the second insulating barrier and the 3rd conductive layer, and wherein, described adhesive layer is arranged on described 3rd conductive layer; Wherein, a described N-1 blind hole is in the part or all of projection in the direction, plate face of described first base material, fall into the conductive region of described 3rd conductive layer among the projection in the direction, plate face of described first base material, or, a described N-1 blind hole, in the projection in the direction, plate face of described first base material, overlaps in the projection in the direction, plate face of described first base material with the conductive region of described 3rd conductive layer.
9. method according to claim 6, is characterized in that, described protection upper body comprises: the second base material and the second resin bed be arranged on described second base material and the adhesive layer be arranged on described second resin bed;
Described setting on described first resin bed protects upper body, comprising:
By described adhesive layer, described protection upper body is bonded on described first resin bed.
10. 9 methods stated as requested, it is characterized in that, described second base material comprises: the second insulating barrier and the 3rd conductive layer, and wherein, described second resin bed is arranged on described 3rd conductive layer; Wherein, a described N-1 blind hole is in the part or all of projection in the direction, plate face of described first base material, fall into the conductive region of described 3rd conductive layer among the projection in the direction, plate face of described first base material, or, a described N-1 blind hole, in the projection in the direction, plate face of described first base material, overlaps in the projection in the direction, plate face of described first base material with the conductive region of described 3rd conductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210585564.7A CN103065989B (en) | 2012-12-30 | 2012-12-30 | Processing method of multi-path electrostatic discharge protection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210585564.7A CN103065989B (en) | 2012-12-30 | 2012-12-30 | Processing method of multi-path electrostatic discharge protection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103065989A CN103065989A (en) | 2013-04-24 |
| CN103065989B true CN103065989B (en) | 2015-06-03 |
Family
ID=48108556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210585564.7A Active CN103065989B (en) | 2012-12-30 | 2012-12-30 | Processing method of multi-path electrostatic discharge protection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103065989B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256380A (en) * | 2018-09-25 | 2019-01-22 | 南京萨特科技发展有限公司 | A kind of slurry preparation method of PESD core material |
| CN109524421A (en) * | 2019-01-04 | 2019-03-26 | 京东方科技集团股份有限公司 | Interposer substrate and its manufacturing method, array substrate and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955762A (en) * | 1996-01-31 | 1999-09-21 | Lsi Logic Corporation | Microelectronic package with polymer ESD protection |
| US6153913A (en) * | 1999-06-30 | 2000-11-28 | United Microelectronics Corp. | Electrostatic discharge protection circuit |
| US6515364B2 (en) * | 2000-04-14 | 2003-02-04 | Nec Corporation | Semiconductor device |
| CN101226798A (en) * | 2006-08-03 | 2008-07-23 | 库帕技术公司 | Transient voltage protection circuit boards and manufacturing method |
| CN202068672U (en) * | 2011-06-03 | 2011-12-07 | 武汉普力玛新材料技术有限责任公司 | Printed circuit board capable of preventing instant electric overload |
-
2012
- 2012-12-30 CN CN201210585564.7A patent/CN103065989B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5955762A (en) * | 1996-01-31 | 1999-09-21 | Lsi Logic Corporation | Microelectronic package with polymer ESD protection |
| US6153913A (en) * | 1999-06-30 | 2000-11-28 | United Microelectronics Corp. | Electrostatic discharge protection circuit |
| US6515364B2 (en) * | 2000-04-14 | 2003-02-04 | Nec Corporation | Semiconductor device |
| CN101226798A (en) * | 2006-08-03 | 2008-07-23 | 库帕技术公司 | Transient voltage protection circuit boards and manufacturing method |
| CN202068672U (en) * | 2011-06-03 | 2011-12-07 | 武汉普力玛新材料技术有限责任公司 | Printed circuit board capable of preventing instant electric overload |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103065989A (en) | 2013-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103107127B (en) | The processing method of multi-channel electrostatic discharge protective device | |
| JP2017152711A (en) | Perpendicular switching configuration for esd protection | |
| CN103035625B (en) | Processing method of one-way electrostatic discharge (ESD) protective device | |
| CN102604585A (en) | Electronic protecting glue, and preparation method and application thereof | |
| CN103065989B (en) | Processing method of multi-path electrostatic discharge protection device | |
| CN103077937B (en) | Method for processing single-circuit ESD (Electro-Static Discharge) protection device | |
| CN103050484B (en) | Multi-path electrostatic discharge protection device | |
| CN103050492B (en) | Single channel electrostatic discharge protection device | |
| CN101502189B (en) | 3d electronic circuit device | |
| CN103150053A (en) | Touch panel with static protection function | |
| CN201303461Y (en) | Layout structure for preventing electrostatic discharge and electromagnetic interference | |
| CN203242620U (en) | Multipath electro-static discharge protective device | |
| CN203242619U (en) | Multi-path ESD (Electro-Static discharge) protective device | |
| CN103021893B (en) | Processing method for multi-way electrostatic discharge protection device | |
| CN103021894B (en) | Processing method for multi-way electrostatic discharge protection device | |
| CN203242624U (en) | Single-path ESD (Electro-Static discharge) protective device | |
| CN103839926A (en) | Three-dimension integrated circuit package | |
| CN103346147B (en) | Multi-channel electrostatic discharge protective device | |
| CN103022016B (en) | Multi-channel electrostatic discharge protective device | |
| KR20160076887A (en) | Electrostatic discharge protection device and method for manufacturing thereof | |
| CN103346147A (en) | Multi-channel electrostatic discharge protective device | |
| CN211509417U (en) | Circuit board assembly and electronic equipment | |
| US9408285B2 (en) | Electrostatic discharge protection device and chip component with the same | |
| CN104464992A (en) | Method for preparing functional slurry of chip-type static suppressor | |
| CN205295215U (en) | Self -adhesion conductive silicone piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220620 Address after: 518000 107, building 1, 1970 Science Park, Minzhi community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Songchen semiconductor technology (Shenzhen) Co.,Ltd. Address before: 518057 Room 601A, Building 4, Shenzhen Software Park, Central District of Nanshan High-tech Park, Shenzhen City, Guangdong Province Patentee before: SHENZHEN ZHONGKE SYSTEM INTEGRATION TECHNOLOGY Co.,Ltd. |