CN103060757A - Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li - Google Patents

Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li Download PDF

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CN103060757A
CN103060757A CN2012105418289A CN201210541828A CN103060757A CN 103060757 A CN103060757 A CN 103060757A CN 2012105418289 A CN2012105418289 A CN 2012105418289A CN 201210541828 A CN201210541828 A CN 201210541828A CN 103060757 A CN103060757 A CN 103060757A
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crystal film
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CN103060757B (en
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曹铃
李秀燕
杨致
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Taiyuan University of Technology
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Abstract

The invention relates to a method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li, comprising the following steps: adopting pulse laser deposition method for compression and high-temperature sintering after ball milling and mixing NiO, MgO and Li2CO3 powders so as to manufacture Li-doped Ni1-xMgxO ceramic target; placing the ceramic target and a substrate in a pulse laser deposition device; adjusting the distance between the target and the substrate; growing at proper substrate temperature under proper oxygen pressure intensity and laser frequency; and then cooling till room temperature so as to obtain the Li-doped Ni1-xMgxO crystal film. The crystal film prepared by the method is p-type conducting, and has the excellent characteristics of being low in electrical resistivity, high in transmissivity, high in carrier mobility, continuously adjustable in band gap, and the like; and the method is simple, real-time doping is realized, the doping concentration is controlled by adjusting the growth temperature and the contents of Li and Mg in the target, and the obtained film has wide application prospect in the fields of transparent electronic devices, photoelectronic devices and the like.

Description

Li doped growing p type electrically conducting transparent Ni 1-xMg xThe method of O crystal film
Technical field
The present invention relates to a kind of Li doped growing p type electrically conducting transparent Ni 1-xMg xThe method of O crystal film belongs to p-type transparent conductive film technical field.
Background technology
Transparent conductive oxide (TCO) film is a kind of important photoelectric material, has a wide range of applications in fields such as solar cell, plate of flat liquid crystal display, photodiodes because the transparency of its uniqueness and electroconductibility are incorporated into one.N-shaped TCO material is such as ITO (In 2O 3: Sn), FTO (SnO 2: F) and AZO (ZnO:Al), its photoelectric properties have reached better level, and have been widely used in the commercially produced product.
Yet the kind of p-type TCO material correspondingly is few, and its photoelectric properties and N-shaped TCO relatively differ greatly, thereby has limited to a certain extent its application in transparent electronics and opto-electronic device.Therefore, explore and research has the p-type TCO thin-film material of good light electrical property, have the practical significance of reality and using value widely.
NiO is a kind of intrinsic p-type broad stopband (3.7 eV) semiconductor material that typically has direct band gap, NiO and MgO all have a cube NaCl crystalline structure, and lattice parameter is close, the NiO lattice parameter is 0.4177 nm, the MgO lattice parameter is 0.4212 nm, so can obtain in theory the Ni of any component 1-xMg xO (O＜x＜1) unlimited solid solution alloy firm.The energy gap of MgO is 7.8 eV, by mix Mg in NiO, can regulate continuously its energy gap, thereby realize its energy band engineering.But, the Ni that usually prepares 1-xMg xThe O alloy firm presents high resistant, limited to a great extent its as wide bandgap semiconductor materials in the application aspect the opto-electronic device.Theoretical and experimental study shows that Li is a kind of desirable acceptor doping element of NiO, thereby passes through Ni 1-xMg xThe O crystal film carries out the Li acceptor doping also can effectively increase hole in theory, thereby reduces its resistivity, is the continuously adjustable Ni of band gap 1-xMg xThe O film lays the foundation in the application aspect the short-wavelength light electron device.Pulsed laser deposition have deposition parameter easily control, easily keep film consistent with the target composition, can realize mixing in real time and the advantage such as the film crystal quality is good, but up to the present also do not utilize this method to prepare the report of the p-type NiMgO crystal film of Li doping.
Therefore, exploitation Li doped growing p type electrically conducting transparent Ni 1-xMg xThe O crystal film has very important realistic meaning.
Summary of the invention
The objective of the invention is to overcome that existing p-type TCO thin-film material kind is few, photoelectric properties are poor so that be difficult to satisfy the problem of the requirement of optoelectronic device applications, and a kind of Li doped growing p type electrically conducting transparent Ni is provided 1-xMg xThe method of O crystal film.
Above-mentioned purpose of the present invention is achieved by the following technical programs.
A kind of Li doped growing p type electrically conducting transparent Ni 1-xMg xThe method of O crystal film, its described method adopts pulsed laser deposition, and its method steps is as follows:
1) the pure NiO of weighing, pure MgO and pure Li 2CO 3Powder, wherein the molar content x of Mg is 0＜x＜40, the molar content y of Li is 0＜y＜10%, above-mentioned powder ball milling is mixed rear compression moulding, more than 1 hour, more than 4 hours, make the Ni that mixes Li at 1100 ~ 1200 ° of C sintering 800 ° of C presintering again 1-xMg xThe O ceramic target;
2) with step 1) ceramic target that makes and dry up with acetone, ethanol and deionized water successively ultrasonic cleaning and with nitrogen after substrate put into the growth room of pulsed laser deposition device, distance between target and the substrate is 4 ~ 6 cm, and growth room's back end vacuum tightness is evacuated to 10 -4Pa, the substrate heating makes temperature remain 300 ~ 500 ° of C, with pure O 2Be growth atmosphere, control pressure is 0.1 ~ 20 Pa, and laser frequency is 3 ~ 5 Hz, is cooled to room temperature after the growth, obtains Li doped p type electrically conducting transparent Ni 1-xMg xThe O crystal film.
In technique scheme, further additional technical feature is:
It obtains Li doped p type electrically conducting transparent Ni 1-xMg xThe O crystal film is slowly cooling to room temperature behind in-situ annealing 30 min under the oxygen atmosphere protection.
Its described Li doped p type electrically conducting transparent Ni 1-xMg xThe thickness of O crystal film is 50 ~ 400 nm.
Its described substrate is silicon, sapphire, glass or quartz.
Realize a kind of Li doped growing p type electrically conducting transparent Ni provided by the present invention 1-xMg xThe method of O crystal film is molar content, underlayer temperature and the growth atmosphere pressure of mixing Mg and Li by regulating, the continuously adjustable p-type electrically conducting transparent of the band gap Ni of preparation different levels of doping 1-xMg xThe O crystal film, film thickness is determined by depositing time, laser work voltage and repetition rate.Its advantage and positively effect are:
The inventive method can realize real-time doping, at Ni 1-xMg xRealize simultaneously in the O crystal film process of growth that band gap is regulated continuously and p-type is mixed.
The inventive method doping content can be controlled by the molar content that gets Mg and Li in growth regulation temperature and the target.
The method of the invention is simple, prepared p-type thin film crystallization is superior in quality, not only kept a cube NaCl crystalline structure, produce without phase-splitting, and has low-resistivity, high-transmission rate, high carrier mobility, also have preferably repeatability and stable, the film that obtains is with a wide range of applications in fields such as transparent electronics and opto-electronic devices.
Description of drawings
Fig. 1 is the pulsed laser deposition device synoptic diagram that the present invention adopts.Among the figure: 1: laser apparatus; 2: the growth room; 3: target; 4: substrate.
Fig. 2 is the p-type Li doping transparent conduction Ni of the embodiment of the invention 1 1-xMg xX ray diffraction (XRD) collection of illustrative plates of O crystal film.
Fig. 3 is the p-type Li doping transparent conduction Ni of the embodiment of the invention 1 1-xMg xThe optical transmission spectrum of O crystal film.
Embodiment
The below makes further instruction to the specific embodiment of the present invention
Embodiment 1
1) weighing purity is 99.99% NiO, MgO and Li 2CO 3Powder, wherein the molar content x of MgO is that the molar content y of 20%, Li is 4%, with NiO, MgO and Li 2CO 3Mixed powder and an amount of ethanol pour into successively in the ball grinder that agate ball is housed, be placed on the ball mill ball milling 24 hours.The purpose of ball milling has two: on the one hand be for NiO, MgO and Li 2CO 3Powder mixes, with the homogeneity of the target composition that guarantees to prepare; For with NiO, MgO and Li on the other hand 2CO 3Powder fining is beneficial to subsequently moulding and the sintering of mixed powder.
Ball milling is separated raw material and dry after finishing, and the powder that then obtains grinds and compression moulding.The idiosome of moulding is put into sintering oven, first 800 ° of C pre-burnings 1 hour, then, obtain thickness and be about 3 mm more than 4 hours at 1100 ~ 1200 ° of C sintering, diameter is the Ni that mixes Li of 50 mm 0.8Mg 0.2The circular target of O.
2) to mix the Ni of Li 0.8Mg 0.2The O circular is target, quartz substrate after drying up with acetone, ethanol and deionized water ultrasonic cleaning and with nitrogen successively is fixed on the sample table in the pulsed laser deposition device, the distance of adjusting substrate and target is 5 cm, and with baffle plate substrate and target is separated.Back end vacuum tightness is evacuated to 10 in the growth room -4Pa, heated substrate then, making underlayer temperature is 400 ° of C, with pure O 2(purity 99.99%) is growth atmosphere, control O 2Pressure is 5 Pa, and pulsed laser energy is 300 mJ, and laser frequency is 5 Hz, and first pre-sputtering target material 10 min remove the baffle plate of outwarding winding after target material surface pollutes and begin deposition growing, and the time of growth is 60 min, and film thickness is 200 nm.Film after the growth obtains the Ni that Li mixes slowly cooling to room temperature behind in-situ annealing 30 min under the oxygen atmosphere protection 0.8Mg 0.2The O crystal film.Its x ray diffraction (XRD) collection of illustrative plates is seen accompanying drawing 2, and the optical transmission spectrum is seen accompanying drawing 3.
The Li Ni doped that makes 0.8Mg 0.2The O crystal film is the p-type electricity leads, and at room temperature have excellent photoelectricity performance: resistivity is 23.48 Ω cm, and mobility is 0.61 cm2V -1s -1, hole concentration is 4.35 * 10 17Cm -3, the visible light average transmittances surpasses 70%, about 3.9 eV of optical band gap, and the photoelectricity performance of placement several months rear film does not have considerable change.
Embodiment 2
1) weighing purity is 99.99% NiO, MgO and Li 2CO 3Powder, wherein the molar content x of MgO is that the molar content y of 30%, Li is 8%, with NiO, MgO and Li 2CO 3Mixed powder and an amount of ethanol pour into successively in the ball grinder that agate ball is housed, be placed on the ball mill ball milling 24 hours.The purpose of ball milling has two: on the one hand be for NiO, MgO and Li 2CO 3Powder mixes, with the homogeneity of the target composition that guarantees to prepare; For with NiO, MgO and Li on the other hand 2CO 3Powder fining is beneficial to subsequently moulding and the sintering of mixed powder.
Ball milling is separated raw material and dry after finishing, and the powder that then obtains grinds and compression moulding.The idiosome of moulding is put into sintering oven, first 800 ° of C pre-burnings 1 hour, then, obtain thickness and be about 3 mm more than 4 hours at 1100 ~ 1200 ° of C sintering, diameter is the Ni that mixes Li of 50 mm 0.7Mg 0.3The circular target of O.
2) to mix the Ni of Li 0.7Mg 0.3The O circular is target, Sapphire Substrate after drying up with acetone, ethanol and deionized water ultrasonic cleaning and with nitrogen successively is fixed on the sample table in the pulsed laser deposition device, the distance of adjusting substrate and target is 4 cm, and with baffle plate substrate and target is separated.Back end vacuum tightness is evacuated to 10 in the growth room -4Pa, heated substrate then, making underlayer temperature is 500 ° of C, with pure O 2(purity 99.99%) is growth atmosphere, control O 2Pressure is 20 Pa, and pulsed laser energy is 300 mJ, and laser frequency is 5 Hz, and first pre-sputtering target material 10 min remove the baffle plate of outwarding winding after target material surface pollutes and begin deposition growing, and the time of growth is 15 min, and film thickness is 50 nm.Film after the growth obtains the Ni that Li mixes slowly cooling to room temperature behind in-situ annealing 30 min under the oxygen atmosphere protection 0.7Mg 0.3The O crystal film.
The Li Ni doped that makes 0.7Mg 0.3The O crystal film is the p-type electricity leads, and at room temperature have excellent photoelectricity performance: resistivity is 1268 Ω cm, and mobility is 537 cm2V -1s -1, hole concentration is 9.16 * 10 12Cm -3, the visible light average transmittances surpasses 65%, about 4.1 eV of optical band gap, and the photoelectricity performance of placement several months rear film does not have considerable change.
Embodiment 3
1) weighing purity is 99.99% NiO, MgO and Li 2CO 3Powder, wherein the molar content x of MgO is that the molar content y of 10%, Li is 4%, with NiO, MgO and Li 2CO 3Mixed powder and an amount of ethanol pour into successively in the ball grinder that agate ball is housed, be placed on the ball mill ball milling 24 hours.The purpose of ball milling has two: on the one hand be for NiO, MgO and Li 2CO 3Powder mixes, with the homogeneity of the target composition that guarantees to prepare; For with NiO, MgO and Li on the other hand 2CO 3Powder fining is beneficial to subsequently moulding and the sintering of mixed powder.
Ball milling is separated raw material and dry after finishing, and the powder that then obtains grinds and compression moulding.The idiosome of moulding is put into sintering oven, first 800 ° of C pre-burnings 1 hour, then, obtain thickness and be about 3 mm more than 4 hours at 1100 ~ 1200 ° of C sintering, diameter is the Ni that mixes Li of 50 mm 0.9Mg 0.1The circular target of O.
2) to mix the Ni of Li 0.9Mg 0.1The O circular is target, glass substrate after drying up with acetone, ethanol and deionized water ultrasonic cleaning and with nitrogen successively is fixed on the sample table in the pulsed laser deposition device, the distance of adjusting substrate and target is 6 cm, and with baffle plate substrate and target is separated.Back end vacuum tightness is evacuated to 10 in the growth room -4Pa, heated substrate then, making underlayer temperature is 300 ° of C, with pure O 2(purity 99.99%) is growth atmosphere, control O 2Pressure is 0.1 Pa, and pulsed laser energy is 300 mJ, and laser frequency is 5 Hz, and first pre-sputtering target material 10 min remove the baffle plate of outwarding winding after target material surface pollutes and begin deposition growing, and the time of growth is 120 min, and film thickness is 400 nm.Film after the growth obtains the Ni that Li mixes slowly cooling to room temperature behind in-situ annealing 30 min under the oxygen atmosphere protection 0.9Mg 0.1The O crystal film.
The Li Ni doped that makes 0.9Mg 0.1The O crystal film is the p-type electricity leads, and at room temperature have excellent photoelectricity performance: resistivity is 111 Ω cm, and mobility is 30.5 cm2V -1s -1, hole concentration is 1.84 * 10 15Cm -3, the visible light average transmittances surpasses 60%, about 3.8 eV of optical band gap, and the photoelectricity performance of placement several months rear film does not have considerable change.

Claims (4)

1. Li doped growing p type electrically conducting transparent Ni 1-xMg xThe method of O crystal film comprises pulsed laser deposition, and its concrete grammar step is as follows:
1) with NiO, MgO and the Li of purity 〉=99.99% 2CO 3Powder, wherein the molar content x of Mg is 0＜x＜40%, and the molar content y of Li is 0＜y＜10%, and ball milling mixes rear compression moulding, more than 1 hour, more than 4 hours, makes the Ni that mixes Li at 1100 ~ 1200 ° of C sintering 800 ° of C presintering again 1-xMg xThe O ceramic target;
2) with above-mentioned steps 1) Ni that mixes Li that makes 1-xMg xThe O ceramic target with acetone, ethanol and deionized water successively ultrasonic cleaning and insert with the substrate that nitrogen dries up in the growth room of pulsed laser deposition device, the distance between adjustment target and the substrate is 4 ~ 6 cm, growth room's back end vacuum tightness is 10 -4Pa, substrate heating temperature are 300 ~ 500 ° of C, with purity〉99.999% O 2Be growth atmosphere, control pressure is 0.1 ~ 20 Pa, and laser frequency is 3 ~ 5 Hz, and growth time is 20 ~ 120 min, grow, after be cooled to room temperature, obtain Li doped p type electrically conducting transparent Ni 1-xMg xThe O crystal film.
2. method according to claim 1, it obtains Li doped p type electrically conducting transparent Ni 1-xMg xThe O crystal film is slowly cooling to room temperature behind in-situ annealing 30 min under the oxygen atmosphere protection.
3. method according to claim 1 and 2, its described Li doped p type electrically conducting transparent Ni 1-xMg xThe thickness of O crystal film is 50 ~ 400 nm.
4. method according to claim 1, its described substrate is silicon, sapphire, glass or quartz.
CN201210541828.9A 2012-12-14 2012-12-14 Method for growing p-type transparent and conducting Ni1-xMgxO crystal film by doping Li Expired - Fee Related CN103060757B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108545787A (en) * 2018-05-10 2018-09-18 浙江大学 Hot injection method prepares nickel oxide and mixes the nanocrystalline method with nickel oxide film of lithium
CN116332623A (en) * 2023-03-27 2023-06-27 深圳市众诚达应用材料科技有限公司 NMO oxide semiconductor material, and preparation method and application thereof
CN116768606A (en) * 2023-06-06 2023-09-19 先导薄膜材料（广东）有限公司 Composite nickel magnesium oxide target and preparation method thereof

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CN102560361A (en) * 2012-02-28 2012-07-11 杭州电子科技大学 P-type transparent conductive lithium-doped nickel oxide film and preparation method thereof

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CN102560361A (en) * 2012-02-28 2012-07-11 杭州电子科技大学 P-type transparent conductive lithium-doped nickel oxide film and preparation method thereof

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108545787A (en) * 2018-05-10 2018-09-18 浙江大学 Hot injection method prepares nickel oxide and mixes the nanocrystalline method with nickel oxide film of lithium
CN108545787B (en) * 2018-05-10 2019-08-20 浙江大学 Hot injection method prepares nickel oxide and mixes the nanocrystalline method with nickel oxide film of lithium
CN116332623A (en) * 2023-03-27 2023-06-27 深圳市众诚达应用材料科技有限公司 NMO oxide semiconductor material, and preparation method and application thereof
CN116768606A (en) * 2023-06-06 2023-09-19 先导薄膜材料（广东）有限公司 Composite nickel magnesium oxide target and preparation method thereof

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