CN103058712B - C/SiC composite coating applied to surface of low-density carbon/carbon composite material and preparation process thereof - Google Patents

C/SiC composite coating applied to surface of low-density carbon/carbon composite material and preparation process thereof Download PDF

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CN103058712B
CN103058712B CN2013100078764A CN201310007876A CN103058712B CN 103058712 B CN103058712 B CN 103058712B CN 2013100078764 A CN2013100078764 A CN 2013100078764A CN 201310007876 A CN201310007876 A CN 201310007876A CN 103058712 B CN103058712 B CN 103058712B
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carbon
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carbon composite
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CN103058712A (en
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蒋建纯
罗中保
姚勇刚
康志卫
刘昊
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HUNAN NANFANG BOYUN NEW MATERIAL CO Ltd
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HUNAN NANFANG BOYUN NEW MATERIAL CO Ltd
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Abstract

The invention relates to a C/SiC composite coating applied to the surface of a low-density carbon/carbon composite material and a preparation process thereof. The composite coating consists of an inner hole sealing layer and an outer coating. The inner hole sealing layer is prepared from the raw materials in percentage by weight: 10-60% of silicon carbide powder, 1-25% of silicon powder, 0.05-8% of graphite powder, 1-10% of polyacrylonitrile ground carbon fiber and 40-80% of silica sol. The outer coating is prepared from the raw materials in percentage by weight: 10-30% of silicon carbide powder, 40-60% of resin, 30-70% of diluter and 1-6% of curing agent. The invention further comprises the preparation process of the low density C/SiC composite coating made of the carbon/carbon composite material. The C/SiC composite coating applied to the surface of the low-density carbon/carbon composite material provided by the invention is better in oxidation resistance, better in bonding force with a substrate material, compact in surface, free from crack and free from power fall.

Description

Preparing low-density carbon/carbon composite C/SiC compound coating and preparation technology thereof
Technical field
The present invention relates to thermal field material accessory for the crystalline silicon growth apparatus, especially relate to C/SiC compound coating and the preparation technology thereof of a kind of low density charcoal/charcoal composite heat insulatant thermal insulation material piece surface.
Background technology
Carbon/carbon composite has specific tenacity and specific modulus is high, high temperature resistant, corrosion-resistant, antifatigue, and creep resistance, good conduction and heat transfer property, and the excellent properties such as thermal expansivity is little, therefore, be widely used in a lot of fields.Preparing low-density carbon/carbon composite is monocrystaline silicon stove, polycrystalline silicon furnace and the requisite heat preserving and insulating material of a lot of industry High Temperature Furnaces Heating Apparatuss.Working temperature in monocrystaline silicon stove, polycrystalline silicon furnace, more than 1500 ℃, contain silicon vapor and oxidizing gas in its Working environment, and therefore the perforate hole of preparing low-density carbon/carbon composite, very easily is etched more than 80% more.Along with the photovoltaic Industry Quick Development, the rapid expansion of silicon single crystal, polysilicon manufacturing, the demand of charcoal/charcoal thermal field material increases day by day, competes more and more fiercely, and the requirement of quality is also higher.It is to improve carbon/carbon composite surface anti-erosion that carbon/carbon composite material surface coating is processed, and improves the stability of product, extends product work-ing life, improves the main method of product quality.
SiC and carbon matrix bonding force that reaction in-situ forms are strong, and thermal matching can be good, is good high-temperature inoxidzable coating material, unreactiveness is large, fusing point is high, its high-temperature behavior, thermal shock resistance and antioxidant property excellence, and the SiC pyroreaction can generate continuous, even, fine and close SiO simultaneously 2Protective oxide layer, in the scattering and permeating rate that has relatively low vapour pressure and oxygen below 1700 ℃, have preferably the characteristics such as chemical compatibility with Carbon Materials, therefore be commonly used to the inoxidzable coating as charcoal Carbon Materials or graphite high-temperature material.
Chinese patent 201010516935.7 discloses a kind of preparation method of preparing low-density carbon/carbon composite material surface coating.Although the method technique is simple, the bonding force of coating and matrix is poor, easily powder falling.
Chinese patent 200310115119.5 discloses a kind of carbon/carbon composite material oxidation-proof coating; Chinese patent 200510012730.4 discloses a kind of preparation method of charcoal material surface coating for resisting high temperature oxidation; Chinese patent 200910311945.4 discloses a kind of surface erosion-resistant composite coating of carbon/carbon composite and preparation method, above-mentioned patent is all preparation methods of higher density carbon material surface coating, and is not suitable for the service requirements to the silicon crystal stove of metals content impurity requirement harshness.
Chinese patent 200810079793.5 discloses a kind of method that prepared by Carbon Materials employing electrophoretic deposition to coat of silicon carbide, the method complex technical process, and cost is high.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of good with bonding force body material, surface compact, and flawless produces, and without the powder falling phenomenon, technological process is simple, preparing low-density carbon/carbon composite C/SiC compound coating and preparation technology thereof that cost is low.
The technical scheme that the present invention solves its technical problem employing is:
The present invention's preparing low-density carbon/carbon composite C/SiC compound coating, be comprised of interior sealing of hole layer and external coating (EC) two portions;
Described interior sealing of hole layer is made by the raw material of following weight percent: carborundum powder 10%~60%(preferably 20%~30%), silica flour 1%~25%(preferably 2%~5%), Graphite Powder 99 0.05%~8%(preferably 1%~5%), polyacrylonitrile milled carbon fiber 1%~10%(preferably 2%~5%), silicon sol 40%~80%(preferably 55%~75%), described each component proportion sum is 100%;
Described external coating (EC) is made by the raw material of following weight percent: carborundum powder 10%~30%(preferably 15%~20%), resin 40%~60%(preferably 45%~50%), thinner 30%~70%(preferably 35%~50%), solidifying agent 1%~6%(preferably 3%~5%), described each component proportion sum is 100%.
The preparation technology of the present invention's preparing low-density carbon/carbon composite C/SiC compound coating comprises the following steps:
(1) smooth with 200~400 purpose sand paperings to the preparing low-density carbon/carbon composite product surface, suck floating dust with suction cleaner;
(2) by quality proportioning carborundum powder 10%~60%(preferably 20%~30%), silica flour 1%~25%(preferably 2%~5%), Graphite Powder 99 0.05%~8%(preferably 1%~5%), polyacrylonitrile milled carbon fiber 1%~10%(preferably 2%~5%), silicon sol 40%~80%(preferably 55%~75%) each raw material is mixed, stir, obtain slurry; All be applied to the preparing low-density carbon/carbon composite product surface after step (1) is processed, coating thickness 100~200 μ m with the gained slurry;
(3) after the preparing low-density carbon/carbon composite goods after step (2) is processed are dried in the air 0.5~1 hour at ambient temperature, being placed in baking oven is toasted, after being warming up to 80~180 ℃ (preferably 110~130 ℃) with the temperature rise rate of 50 ± 2 ℃/h, afterheat baking 1~2 hour;
(4) smooth with 400~800 purpose sand paperings to the preparing low-density carbon/carbon composite product surface after step (3) is processed, suck floating dust with suction cleaner;
(5) by quality proportioning carborundum powder 10%~30%(preferably 15~20%), resin 40%~60%(preferably 45%~50%), thinner 30%~70%(preferably 35%~50%), solidifying agent 1%~6%(preferably 3%~5%) each raw material is mixed, stir, obtain slurry; All be applied to the preparing low-density carbon/carbon composite product surface after step (4) is processed, coating thickness 50~100 μ m with the gained slurry;
(6) after the preparing low-density carbon/carbon composite goods after step (5) is processed are dried in the air 1~2 hour at ambient temperature, being placed in baking oven is toasted, after being warming up to 120~240 ℃ (preferably 170~190 ℃) with the temperature rise rate of 60 ± 2 ℃/h, afterheat baking 1~2 hour;
(7) the preparing low-density carbon/carbon composite goods after step (6) is processed are inserted in chemical vapor deposition stove, adopt hydrocarbon gas to carry out chemical vapour deposition, depositing temperature is 900~1200 ℃, depositing time is 10~20 hours, the hydrocarbon gas flow is 20~40L/min, and nitrogen flow is 10~20L/min.
Further, in step (2), carborundum powder is α-SiC, and granularity is 400~1200 orders, and silicon particle size is 400~800 orders, and the Graphite Powder 99 granularity is 400~600 orders, polyacrylonitrile milled carbon fiber length 50~200 μ m.
Further, in step (5), carborundum powder is α-SiC, and granularity is 400~1200 orders, and resin is furane resin, resol or silicone resin, and thinner is ethanol or acetone, and solidifying agent is tosic acid.
Further, in step (7), in chemical vapor deposition process, hydrocarbon gas is methane, propane or propylene.
The present invention's preparing low-density carbon/carbon composite C/SiC compound coating has better resistance of oxidation, and the bonding force of coating and body material is good, surface compact, and flawless produces, without the powder falling phenomenon.
The present invention's preparing low-density carbon/carbon composite C/SiC compound coating preparation technology, need not process through high temperature sintering, and technical process is simple, reproducible, but mass production, and cost is low; Coating adopts spraying or brushes, workable; Owing to carrying out the sealing of hole processing, thereby can avoid preparing low-density carbon/carbon composite to cause the phenomenons such as density increase, uneven thickness and cracking because too much adsorbing coating in the external coating (EC) treatment process.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
Embodiment 1
The preparing low-density carbon/carbon composite C/SiC compound coating of the present embodiment, be comprised of interior sealing of hole layer and external coating (EC) two portions;
Described interior sealing of hole layer is made by the raw material of following weight percent: carborundum powder 20%, silica flour 2%, Graphite Powder 99 1%, polyacrylonitrile milled carbon fiber 2%, silicon sol 75%;
Described external coating (EC) is made by the raw material of following weight percent: silicon carbide 20%, resin 40%, thinner 35%, solidifying agent 5%.
The preparation technology of the preparing low-density carbon/carbon composite C/SiC compound coating of the present embodiment comprises the following steps:
(1) adopting density is 0.15g/cm 3, external diameter is 1015mm, internal diameter is 940mm, is highly the cylinder series products (preparing low-density carbon/carbon composite) of 600mm; Smooth with 300 purpose sand paperings to product surface, suck floating dust with suction cleaner;
(2) adopt carborundum powder 20% by the quality proportioning, silica flour 2%, Graphite Powder 99 1%, polyacrylonitrile milled carbon fiber 2%, silicon sol 75% mixes, and obtains slurry; All be applied to the product surface after step (1) is processed, coating thickness 150 μ m with the gained slurry;
Described carborundum powder is α-SiC, and granularity is 1200 orders, and silicon particle size is 400 orders, and the Graphite Powder 99 granularity is 500 orders, polyacrylonitrile milled carbon fiber length 50~200 μ m;
(3) after the product after step (2) is processed is dried in the air 0.5 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 120 ℃ with the temperature rise rate of 50 ± 1 ℃/h, afterheat baking 1.5 hours;
(4) product surface after step (3) is processed is smooth with 500 purpose sand paperings, suck floating dust with suction cleaner;
(5) by quality proportioning carborundum powder 20%, resin 40%, thinner 35%, solidifying agent 5% mixes, and stirs, and obtains slurry; All be applied to the product surface after step (4) is processed, coating thickness 80 μ m with the gained slurry;
Described carborundum powder is α-SiC, and granularity is 1200 orders, and resin is resol, and thinner is acetone, and solidifying agent is tosic acid;
(6) after the product after step (5) is processed is dried in the air 1 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 180 ℃ with the temperature rise rate of 60 ± 1 ℃/h, afterheat baking 1.5 hours;
(7) product after step (6) is processed is inserted in chemical vapor deposition stove, adopts propane to carry out chemical vapour deposition, and depositing temperature is 1000 ℃, and depositing time is 10 hours, and the propane flow is 30L/min, and nitrogen flow is 12L/min.
Carbon/carbon composite compound coating prepared by the present embodiment, for the single crystal growing furnace lagging material, used 1500 hours under the condition that is 1500 ℃ in temperature, and top coat is without cracking, powder falling phenomenon, and weightless about 2%(is in Table 1).
Embodiment 2
The preparing low-density carbon/carbon composite C/SiC compound coating of the present embodiment, be comprised of interior sealing of hole layer and external coating (EC) two portions;
Described interior sealing of hole layer is made by the raw material of following weight percent: carborundum powder 30%, silica flour 5%, Graphite Powder 99 5%, polyacrylonitrile milled carbon fiber 5%, silicon sol 55%;
Described external coating (EC) is made by the raw material of following weight percent: carborundum powder 15%, resin 47%, thinner 35%, solidifying agent 3%.
The preparation technology of the preparing low-density carbon/carbon composite C/SiC compound coating of the present embodiment comprises the following steps:
(1) adopting density is 0.20g/cm 3, external diameter is 980mm, internal diameter is 702mm, is highly the sheet material series products (preparing low-density carbon/carbon composite) of 80mm; Smooth with 300 purpose sand paperings to product surface, suck floating dust with suction cleaner;
(2) adopt carborundum powder 30% by the quality proportioning, silica flour 5%, Graphite Powder 99 5%, polyacrylonitrile milled carbon fiber 5%, silicon sol 55% mixes, and stirs, and obtains slurry; All be applied to the product surface after step (1) is processed, coating thickness 150 μ m with the gained slurry;
Described carborundum powder is α-SiC, and granularity is 1200 orders, and silicon particle size is 400 orders, and the Graphite Powder 99 granularity is 500 orders, polyacrylonitrile milled carbon fiber length 50~200 μ m;
(3) after the product after step (2) is processed is dried in the air 1 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 120 ℃ with the temperature rise rate of 50 ± 1 ℃/h, afterheat baking 1.5 hours;
(4) product surface after step (3) is processed is smooth with 500 purpose sand paperings, suck floating dust with suction cleaner;
(5) by quality proportioning carborundum powder 15%, resin 47%, thinner 35%, solidifying agent 3% mixes, and stirs, and obtains slurry; All be applied to the product surface after step (4) is processed, coating thickness 80 μ m with the gained slurry;
Described carborundum powder is α-SiC, and granularity is 1200 orders, and resin is furane resin, and thinner is ethanol, and solidifying agent is tosic acid;
(6) after the product after coating is processed is dried in the air 1 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 180 ℃ with the temperature rise rate of 60 ± 1 ℃/h, afterheat baking 1.5 hours;
(7) product after step (6) is processed is inserted in chemical vapor deposition stove, adopts methane to carry out chemical vapour deposition, and depositing temperature is 1100 ℃, and depositing time is 20 hours, and methane flow is 25L/min, and nitrogen flow is 10L/min.
Carbon/carbon composite compound coating prepared by the present embodiment, for the single crystal growing furnace lagging material, used 2000 hours under the condition that is 1500 ℃ in temperature, and top coat is without cracking, powder falling phenomenon, and weightless 3.2%(is in Table 2).
Table 1 a series products antioxidant property test result
Time (h) 60 120 180 1380 1440 1500
Rate of weight loss (%) 0.68 0.69 0.693 1.94 1.965 2.01
Table 2 plate series products antioxidant property test result
Time (h) 60 120 180 1380 1440 1500
Rate of weight loss (%) 0.45 0.5 0.65 3.15 3.15 3.2

Claims (5)

1. the preparation technology of a preparing low-density carbon/carbon composite C/SiC compound coating, is characterized in that, described C/SiC compound coating is comprised of interior sealing of hole layer and external coating (EC) two portions;
Described interior sealing of hole layer is made by the raw material of following weight percent: carborundum powder 10%~60%, and silica flour 1%~25%, Graphite Powder 99 0.05%~8%, polyacrylonitrile milled carbon fiber 1%~10%, silicon sol 40%~80%, described each component proportion sum is 100%;
Described external coating (EC) is made by the raw material of following weight percent: carborundum powder 10%~30%, and resin 40%~60%, thinner 30%~70%, solidifying agent 1%~6%, described each component proportion sum is 100%;
The preparation technology of described preparing low-density carbon/carbon composite C/SiC compound coating comprises the following steps:
(1) smooth with 200~400 purpose sand paperings to the preparing low-density carbon/carbon composite product surface, suck floating dust with suction cleaner;
(2) by quality proportioning carborundum powder 10%~60%, silica flour 1%~25%, Graphite Powder 99 0.05%~8%, polyacrylonitrile milled carbon fiber 1%~10%, silicon sol 40%~80% mixes, and stirs, and obtains slurry; All be applied to the preparing low-density carbon/carbon composite product surface after step (1) is processed, coating thickness 100~200 μ m with the gained slurry;
(3) after the preparing low-density carbon/carbon composite goods after step (2) is processed are dried in the air 0.5~1 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 80~180 ℃ with the temperature rise rate of 50 ± 2 ℃/h, afterheat baking 1~2 hour;
(4) smooth with 400~800 purpose sand paperings to the preparing low-density carbon/carbon composite product surface after step (3) is processed, suck floating dust with suction cleaner;
(5) by quality proportioning carborundum powder 10%~30%, resin 40%~60%, thinner 30%~70%, solidifying agent 1%~6% mixes, and stirs, and obtains slurry; All be applied to the preparing low-density carbon/carbon composite product surface after step (4) is processed, coating thickness 50~100 μ m with the gained slurry;
(6) after the preparing low-density carbon/carbon composite goods after step (5) is processed are dried in the air 1~2 hour at ambient temperature, be placed in baking oven and toasted, after being warming up to 120~240 ℃ with the temperature rise rate of 60 ± 2 ℃/h, afterheat baking 1~2 hour;
(7) the preparing low-density carbon/carbon composite goods after step (6) is processed are inserted in chemical vapor deposition stove, adopt hydrocarbon gas to carry out chemical vapour deposition, depositing temperature is 900~1200 ℃, depositing time is 10~20 hours, the hydrocarbon gas flow is 20~40L/min, and nitrogen flow is 10~20L/min.
2. the preparation technology of preparing low-density carbon/carbon composite C/SiC compound coating according to claim 1, it is characterized in that, described interior sealing of hole layer is made by the raw material of following weight percent: carborundum powder 20%~30%, silica flour 2%~5%, Graphite Powder 99 1%~5%, polyacrylonitrile milled carbon fiber 2%~5%, silicon sol 55%~75%, described each component proportion sum is 100%; Described external coating (EC) is made by the raw material of following weight percent: carborundum powder 15%~20%, and resin 45%~50%, thinner 35%~50%, solidifying agent 3%~5%, described each component proportion sum is 100%.
3. the preparation technology of preparing low-density carbon/carbon composite C/SiC compound coating according to claim 1 and 2, it is characterized in that, in step (2), carborundum powder is α-SiC, granularity is 400~1200 orders, silicon particle size is 400~800 orders, and the Graphite Powder 99 granularity is 400~600 orders, polyacrylonitrile milled carbon fiber length 50~200 μ m.
4. the preparation technology of preparing low-density carbon/carbon composite C/SiC compound coating according to claim 1 and 2, it is characterized in that, in step (5), carborundum powder is α-SiC, granularity is 400~1200 orders, resin is furane resin, resol or silicone resin, and thinner is ethanol or acetone, and solidifying agent is tosic acid.
5. the preparation technology of preparing low-density carbon/carbon composite C/SiC compound coating according to claim 1 and 2, is characterized in that, in step (7), in chemical vapor deposition process, hydrocarbon gas is methane, propane or propylene.
CN2013100078764A 2013-01-10 2013-01-10 C/SiC composite coating applied to surface of low-density carbon/carbon composite material and preparation process thereof Expired - Fee Related CN103058712B (en)

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