CN103051242A - Bidirectional rectifying and boosting circuit - Google Patents

Bidirectional rectifying and boosting circuit Download PDF

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Publication number
CN103051242A
CN103051242A CN2012105832448A CN201210583244A CN103051242A CN 103051242 A CN103051242 A CN 103051242A CN 2012105832448 A CN2012105832448 A CN 2012105832448A CN 201210583244 A CN201210583244 A CN 201210583244A CN 103051242 A CN103051242 A CN 103051242A
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China
Prior art keywords
power transistor
coupled
input port
voltage
port
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CN2012105832448A
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Chinese (zh)
Inventor
于正友
刘海生
刘雷
曲志乾
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Qingdao Shengjia Information Technology Co Ltd
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Qingdao Shengjia Information Technology Co Ltd
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Priority to CN2012105832448A priority Critical patent/CN103051242A/en
Publication of CN103051242A publication Critical patent/CN103051242A/en
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Abstract

The invention provides a bidirectional rectifying and boosting circuit, which aims at solving the problems of high cost and low electric energy conversion efficiency in the existing electric energy conversion system. The bidirectional rectifying and boosting circuit comprises a first input port, a second input port, an output port, a middle junction, an inductor, a first power transistor, a second power transistor, a third power transistor, a fourth power transistor, an output capacitor and a load, wherein the first input port and the second input port are used for receiving power frequency alternating current voltage, the output port is used for providing output voltage, the inductor is coupled between the first input port and the middle junction, the first power transistor is coupled between the middle junction and the output port, the second power transistor is coupled between the middle junction and a reference ground, the third power transistor is coupled between the second input port and the output port, the fourth power transistor is coupled between the second input port and the reference ground, the output capacitor and the load are connected and coupled between the output port and the reference ground in parallel, the first power transistor and the second power transistor run at a lower switching frequency, and the third power transistor and the fourth power transistor run at a higher switching frequency. The bidirectional rectifying and boosting circuit has the advantages that the cost is reduced, and the efficiency is improved.

Description

A kind of biphase rectification booster circuit
Technical field
The present invention relates to electronic technology field, particularly a kind of biphase rectification booster circuit.
Background technology
Nowadays, many electronic equipments all need DC-voltage supply.Therefore, connect the electric energy of coming from electrical network and often need to pass through multiple conversion.Fig. 1 illustrates the electrical block diagram of typical electric energy conversion system 10.As shown in Figure 1, described electric energy conversion system 10 comprises: first input end mouth 11, the second input port 12, and described first input end mouth 11 and the second input port 12 receive power frequency ac voltage Vac; Rectifier bridge 13 is coupled to first input end mouth 11 and the second input port 12, receives power frequency ac voltage Vac, produces commutating voltage V DC, described rectifier bridge 13 comprises the rectifier diode that four bridge-types couple; DC-DC transducer 14 is coupled to rectifier bridge 13 and receives commutating voltage V DC, produce required output voltage V o.
As seen from Figure 1, existing electric energy conversion system needs at least two-stage electric energy conversion, and namely rectifier bridge 13 and DC-DC transducer 14 could be converted to power frequency ac voltage required output voltage.Multistage conversion has increased circuit cost, and has reduced energy conversion efficiency.
Summary of the invention
The present invention proposes a kind of biphase rectification booster circuit, has solved the problem that existing electric energy conversion system cost is high, energy conversion efficiency is low.
Technical scheme of the present invention is achieved in that
A kind of biphase rectification booster circuit comprises: first input end mouth, the second input port, and described first input end mouth and the second input port receive power frequency ac voltage; Output port provides output voltage; Intermediate node; Inductor is coupled between first input end mouth and the intermediate node; The first power transistor is coupled between intermediate node and the output port; The second power transistor is coupled in intermediate node and with reference between the ground; The 3rd power transistor is coupled between the second input port and the output port; The 4th power transistor is coupled in the second input port and with reference between the ground; Output capacitor is coupled in output port and with reference between the ground; Load is coupled in output port and with reference between the ground; Wherein said the first power transistor and the second power transistor run on lower switching frequency; Described the 3rd power transistor and the 4th power transistor run on higher switching frequency.
Alternatively, the switching frequency of described the second power transistor and the 4th power transistor equals the frequency of described power frequency ac voltage.
Alternatively, described first to fourth power transistor comprises MOS (metal-oxide-semiconductor) memory.
Alternatively, when the voltage of first input end mouth during greater than the voltage of the second input port, described the first power transistor is controlled the maintenance conducting state, described the second power transistor is remained open state by control, and described the 3rd power transistor and described the 4th power transistor are run in turn conducting state by control; When the voltage of first input end mouth during less than the voltage of the second input port, described the first power transistor is remained open state by control, described the second power transistor is controlled the maintenance conducting state, and described the 3rd power transistor and described the 4th power transistor are run in turn conducting state by control.
The invention has the beneficial effects as follows: reduced cost, improved energy conversion efficiency.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the electrical block diagram of existing electric energy conversion system 10;
Fig. 2 is the electrical block diagram of a kind of biphase rectification booster circuit 100 of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Fig. 2 is the electrical block diagram of a kind of biphase rectification booster circuit 100 of the present invention.As shown in Figure 2, described biphase rectification booster circuit 100 comprises: first input end mouth 101, the second input port 102, and described first input end mouth 101 and the second input port 102 receive power frequency ac voltage Vac; Output port 110 provides output voltage V o; Intermediate node 111; Inductor 109 is coupled between first input end mouth 101 and the intermediate node 111; The first power transistor 103 is coupled between intermediate node 111 and the output port 110; The second power transistor 104 is coupled in intermediate node 111 and with reference between the ground; The 3rd power transistor 105 is coupled between the second input port 102 and the output port 110; The 4th power transistor 106 is coupled in the second input port 102 and with reference between the ground; Output capacitor 107 is coupled in output port 110 and with reference between the ground; Load 108 is coupled in output port 110 and with reference between the ground; Wherein said the first power transistor 103 and the second power transistor 104 run on lower switching frequency; Described the 3rd power transistor 105 and the 4th power transistor 106 run on higher switching frequency.
Preferably, described first to fourth power transistor comprises MOS (metal-oxide-semiconductor) memory (MOSFET).
Preferably, the switching frequency of described the first power transistor 103 and the second power transistor 104 equals the frequency of described power frequency ac voltage Vac.
Preferably, when the voltage of first input end mouth 101 during greater than the voltage (being that first input end mouth 101 is negative voltage for positive voltage, the second input port 102) of the second input port 102, described the first power transistor 103 is kept conducting state by control, described the second power transistor 104 is remained open state by control, and described the 3rd power transistor 105 and described the 4th power transistor 106 are run in turn conducting state by control; When the voltage of first input end mouth 101 during less than the voltage (being that first input end mouth 101 is positive voltage for negative voltage, the second input port 102) of the second input port 102, described the first power transistor 103 is remained open state by control, described the second power transistor 104 is kept conducting state by control, and described the 3rd power transistor 105 and described the 4th power transistor 106 are run in turn conducting state by control.
Specifically, when described biphase rectification booster circuit 100 operation, if the voltage of first input end mouth 101 is during greater than the voltage of the second input port 102 (being that first input end mouth 101 is negative voltage for positive voltage, the second input port 102), described the first power transistor 103 is kept conducting states, the second power transistor 104 to be remained open state by control by control.Then when the 3rd power transistor 105 be switched on, when the 4th power transistor 106 is disconnected, first input end mouth 101, inductor 109, the first power transistor 103, the 3rd power transistor 105 and the second input port 102 form current circuit, the electric current of inductor 109 of flowing through this moment begins to increase, and power frequency ac voltage Vac stores the energy in the inductor 109; When the 3rd power transistor 105 be disconnected, when the 4th power transistor 106 is switched on, first input end mouth 101, inductor 109, the first power transistor 103, output capacitor 107, load 108, the 4th power transistor 106 and the second input port 102 form current circuit, the electric current of inductor 109 of flowing through this moment begins to reduce, and power frequency ac voltage Vac and inductor 109 provide energy to load 108.If the voltage of first input end mouth 101 is during less than the voltage of the second input port 102 (being that first input end mouth 101 is positive voltage for negative voltage, the second input port 102), described the first power transistor 102 is remained open state by control, and described the second power transistor 104 is kept conducting state by control.Then when the 3rd power transistor 105 be disconnected, when the 4th power transistor 106 is switched on, the second input port 102, the 4th power transistor 106, the second power transistor 104, inductor 109 and first input end mouth 101 form current circuit, the electric current of inductor 109 of flowing through this moment begins to increase, and power frequency ac voltage Vac stores the energy in the inductor 109; When the 3rd power transistor 105 be switched on, when the 4th power transistor 106 is disconnected, the second input port 102, the 3rd power transistor 105, output capacitor 107, load 108, the second power transistor 104, inductor 109 and first input end mouth 101 form current circuit, the electric current of inductor 109 of flowing through this moment begins to reduce, and inductor 109 and power frequency ac voltage Vac provide energy to load 108.
Therefore, by control first to fourth power transistor such as upper type, power frequency ac voltage Vac obtains on the one hand rectification, on the other hand power frequency ac voltage Vac is promoted to required output voltage V o in order to offered load.
100 of biphase rectification booster circuits of the present invention need the one-level conversion namely to realize the electric energy conversion, therefore reduced cost, improved energy conversion efficiency.
The above only is preferred embodiment of the present invention, and is in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (4)

1. a biphase rectification booster circuit is characterized in that, comprising:
First input end mouth, the second input port, described first input end mouth and the second input port receive power frequency ac voltage;
Output port provides output voltage;
Intermediate node;
Inductor is coupled between first input end mouth and the intermediate node;
The first power transistor is coupled between intermediate node and the output port;
The second power transistor is coupled in intermediate node and with reference between the ground;
The 3rd power transistor is coupled between the second input port and the output port;
The 4th power transistor is coupled in the second input port and with reference between the ground;
Output capacitor is coupled in output port and with reference between the ground;
Load is coupled in output port and with reference between the ground; Wherein
Described the first power transistor and the second power transistor run on lower switching frequency;
Described the 3rd power transistor and the 4th power transistor run on higher switching frequency.
2. biphase rectification booster circuit as claimed in claim 1 is characterized in that, the switching frequency of described the second power transistor and the 4th power transistor equals the frequency of described power frequency ac voltage.
3. biphase rectification booster circuit as claimed in claim 1 is characterized in that, described first to fourth power transistor comprises MOS (metal-oxide-semiconductor) memory.
4. biphase rectification booster circuit as claimed in claim 1 is characterized in that,
When the voltage of first input end mouth during greater than the voltage of the second input port, described the first power transistor is controlled the maintenance conducting state, described the second power transistor is remained open state by control, and described the 3rd power transistor and described the 4th power transistor are run in turn conducting state by control;
When the voltage of first input end mouth during less than the voltage of the second input port, described the first power transistor is remained open state by control, described the second power transistor is controlled the maintenance conducting state, and described the 3rd power transistor and described the 4th power transistor are run in turn conducting state by control.
CN2012105832448A 2012-12-27 2012-12-27 Bidirectional rectifying and boosting circuit Pending CN103051242A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790870B (en) * 2021-10-25 2023-01-21 聯詠科技股份有限公司 Switched-capacitor power stage and switched-capacitor converter

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06133565A (en) * 1992-10-15 1994-05-13 Yuasa Corp Control circuit for bidirectional power converter
CN102122899A (en) * 2010-08-27 2011-07-13 特变电工新疆新能源股份有限公司 Zero-current through compensation method and device for grid-connected inverter
CN102185504A (en) * 2011-05-17 2011-09-14 成都芯源***有限公司 Power supply circuit and method for controlling power supply circuit
CN103051221A (en) * 2011-12-21 2013-04-17 成都芯源***有限公司 Energy acquisition system and method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06133565A (en) * 1992-10-15 1994-05-13 Yuasa Corp Control circuit for bidirectional power converter
CN102122899A (en) * 2010-08-27 2011-07-13 特变电工新疆新能源股份有限公司 Zero-current through compensation method and device for grid-connected inverter
CN102185504A (en) * 2011-05-17 2011-09-14 成都芯源***有限公司 Power supply circuit and method for controlling power supply circuit
CN103051221A (en) * 2011-12-21 2013-04-17 成都芯源***有限公司 Energy acquisition system and method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI790870B (en) * 2021-10-25 2023-01-21 聯詠科技股份有限公司 Switched-capacitor power stage and switched-capacitor converter
US11824449B2 (en) 2021-10-25 2023-11-21 Novatek Microelectronics Corp. Switched-capacitor power stage and switched-capacitor converter

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Application publication date: 20130417