CN103022862A - Random waveform nanosecond pulse high-fidelity amplifying device - Google Patents
Random waveform nanosecond pulse high-fidelity amplifying device Download PDFInfo
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Abstract
The invention discloses a random waveform nanosecond pulse high-fidelity amplifying device. The device is characterized by comprising a semiconductor nanosecond seed source (2) and a pumping source (A), wherein the input end of the semiconductor nanosecond seed source (2) is electrically connected to a seed modulating circuit (1) which drives the semiconductor nanosecond seed source (2) to generate nanoseconds seed pulse of which the waveform is random and the pulse width and the repetition frequency bandwidth can be modulated, the input end of the pumping source (A) is electrically connected to an amplifier synchronous modulation circuit (3) which can achieve synchronous pumping under the condition of seed pulse input, the output main pulse of the semiconductor nanosecond seed source (2) and the output pulse of the pumping source (A) are input to a laser amplifying module (B) respectively, and the output optical pulse of the laser amplifying module (B) are output through an optical fiber filter (4) and a space shaping module (5). The device has the advantages that the output pulse has the random shape, the pulse width and the repetition frequency bandwidth can be modulated, after high-efficient amplification, the quality of beams is good, spectral components are pure and the device is stable, reliable and suitable to various application occasions such as industry and processing industry.
Description
[technical field]
The present invention relates to the nanosecond pulse full-optical-fiber laser, propose a kind of generation and high-fidelity amplifying device of random waveform nanosecond pulse.
[background technology]
The nanosecond pulse of high power random waveform has in industrial processes, medical treatment, laser ranging, biochemistry and high-energy physics field widely uses.The method of generation nanosecond pulse commonly used is to add acousto-optic or the realization of electric-optically Q-switched crystal in continuous wave laser at present, the laser pulse width of acousto-optic Q modulation laser output is greatly about 100-300ns, the laser pulse width of electro-optical Q-switching laser output is about 10ns, the pulse duration tunable range is little, and acousto-optic Q modulation is poor to the switching capability of high-energy laser, the high-voltage pulse that electric-optically Q-switched needs are several kilovolts easily causes interference to other electronic circuits.Adopt Q-regulating technique to produce nanosecond pulse, its time domain waveform trailing edge time is long, and pulse is asymmetric, and the restriction of modulated Q crystal switch time can't obtain that rising edge is precipitous, arbitrarily nanosecond pulse of waveform.
The semiconductor nanosecond seed source of commonly using at present, its response speed is lower, and the rising edge of pulse and trailing edge hangover time are long; In continuous light pattern when output,, average power is at 200-300mW, during with the pulse mode output of thousands of hertz of repetition rates, is subject to duty ratio, and average power sharply reduces, and hundreds of microwatts only increase the difficulty of follow-up amplifying stage; Output wavelength is not suitable for the application scenario that wavelength is had strict demand with the drift of device working temperature; The spectral width of output pulse is 0.2-0.4nm only, cause nonlinear effect relevant with spectrum width in the follow-up amplification process, especially stimulated Brillouin scattering (SBS, stimulated Brillouin scattering) effect just occurs under low power output, the back-scattering light that produces causes spectrum distortion, even burns device.
In the industrial processes field, the single pulse energy of nanosecond pulse commonly used is in the burnt magnitude of milli, the pulse repetition frequency maximum is in the KHz magnitude, the duty ratio of respective pulses is very little, and the pumping laser long duration of action easily produces amplified spont-aneous emission (ASE in gain media, amplified spontaneous emission), cause the distortion of pulse frequency domain, new spectral component occurs, with seed laser contention pump energy; Pumping laser acts on gain media, also may make laser gain surpass cavity loss, causes the generation of spurious pulse, area deformation when causing pulse.In the full fiber amplifier of high power, the optical power density of gain fibre fibre core constantly increases with the raising of laser peak power, peak power in optical fiber surpasses stimulated Brillouin scattering or stimulated Raman scattering (SRS, stimulated Raman scattering) threshold value of nonlinear effect such as, can cause the fiber laser power output to reduce, the adverse effects such as beam quality is deteriorated, especially surpass 10ns in pulse duration, under the application scenario of spectral width less than 1nm, the stimulated Brillouin scattering effect is more obvious, consequent backscattering luminous intensity increases, and is easy to burn gain fibre.
The shortcoming of prior art mainly contain following some:
(1) pulse duration and repetition rate tunable range are little, and pulse shape is single.
(2) the time-frequency domain distortion appears in nanosecond pulse in amplification process.
(3) system energy consumption is high.
(4) beam quality of output is low, unstable.
[summary of the invention]
The present invention has overcome the deficiency of above-mentioned technology, and a random waveform nanosecond pulse high-fidelity amplifying device is provided.
For achieving the above object, the present invention has adopted following technical proposal:
A kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: include semiconductor nanosecond seed source (2) and pumping source (A), it is any that described semiconductor nanosecond seed source (2) input is electrically connected with its generation waveform of driving, the seed modulation circuit (1) of pulsewidth and repetition rate wideband adjustable nanosecond seed pulse, described pumping source (A) input only is electrically connected with in the situation that there is the seed pulse input to realize the amplifier synchronous modulation circuit (3) of synchronous pump, the pulse of the main pulse of described semiconductor nanosecond seed source (2) output and pumping source (A) output is input to respectively laser amplifying module (B), and the light pulse of described laser amplifying module (B) output is successively by optical fiber filter (4) and spacing shaping module (5) output.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: described pumping source (A) is for a plurality of, and a plurality of pumping sources (A) all are connected on the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with successively lens, optical patchcord head and fibre optic isolater between described semiconductor seed source (2) and the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described laser amplifying module (B) is provided with laser bundling device (C) (laser field, popular call, if lower powered, less than 800mW, 2 advance 1 goes out, generally cry by " wavelength division multiplexer ", if high-power, 2 advance 1 goes out, 7 advance 1 goes out, generally be " bundling device ") and gain fibre (D), the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input, and the direct impulse of described pumping source (A) output is connected with another input forward of laser bundling device (C), and described laser bundling device (C) is connecting gain fibre (D).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input by gain fibre (D), reverse impulse and another input Opposite direction connection of laser bundling device (C) of described pumping source (A) output.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with laser amplifying module (B) between described optical fiber filter (4) and the spacing shaping module (5).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with fibre optic isolater between described semiconductor nanosecond seed source (2) and the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: laser amplifying module (B) is for a plurality of between described optical fiber filter (4) and the spacing shaping module (5), and a plurality of laser amplifying modules (B) cascade couples together.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with fibre optic isolater between the adjacent laser amplifier module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described laser bundling device (C) is wavelength division multiplexer or high power bundling device.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described gain fibre (D) is the single mode of doped rare earth element ion or double clad gain fibre.
The step that described method adopts is as follows:
High-speed semiconductor nanosecond seed source (2) under the driving of seed source modulation circuit (1), produce waveform arbitrarily, the nanosecond pulse of pulsewidth and repetition rate wideband adjustable, be input to laser amplifier (B); According to repetition rate and the pulse duration of seed source, appropriate design amplifier synchronous modulation circuit (3) drives pumping source (A), only guarantees pumping source (A) in the situation that there is the seed pulse input to work, and realizes synchronous pump, suppresses the generation of ASE; Optical fiber filter (4) and spacing shaping module (5) are passed through in the nanosecond pulse of laser amplifier (B) output again, unpurified noise contribution in the filtering spectrum, simultaneously beam quality is carried out spacing shaping, obtain the high power nanosecond pulse of random waveform, pulse duration and repetition rate wideband adjustable.
The invention has the beneficial effects as follows:
(1) the semiconductor seed source of employing high-speed response can produce arbitrarily nanosecond pulse of waveform;
(2) repetition rate of nanosecond pulse and pulse duration are all determined by the semiconductor seed source, can obtain wider tuning range;
(3) adopt rising edge precipitous, be continuous light 2-3 seed source drive circuit doubly at the pulse working mode drive current, the seed source power output that can be multiplied, spectral width that can also broadening seed source output pulse is more conducive to realize high-power amplification;
(4) mode of employing synchronous modulation pumping source guarantees only pump laser work when seed pulse is arranged, suppresses the generation of ASE in the amplification process, reduces power consumption;
(5) the proportion filtering mode of being combined with output Shaping, Output of laser spectrum is purer, beam quality is better.
[description of drawings]
Fig. 1 is principle of the invention structure chart;
Fig. 2 is the embodiment of the invention one in the same way pumping pulse high-fidelity one pole enlarged diagram;
Fig. 3 is the embodiment of the invention two backward pumping pulse high-fidelity one pole enlarged diagrams;
Fig. 4 is the embodiment of the invention three pulse high-fidelity cascade enlarged diagrams;
Fig. 5 is the multistage enlarged diagrams of the embodiment of the invention four high power pulse high-fidelities;
Fig. 6 is the multistage synchronous enlarged diagrams of the embodiment of the invention five high power pulse high-fidelities;
[embodiment]
Be described in further detail below in conjunction with accompanying drawing and embodiments of the present invention:
A kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: include semiconductor nanosecond seed source (2) and pumping source (A), it is any that described semiconductor nanosecond seed source (2) input is electrically connected with its generation waveform of driving, the seed modulation circuit (1) of pulsewidth and repetition rate wideband adjustable nanosecond seed pulse, described pumping source (A) input only is electrically connected with in the situation that there is the seed pulse input to realize the amplifier synchronous modulation circuit (3) of synchronous pump, the pulse of the main pulse of described semiconductor nanosecond seed source (2) output and pumping source (A) output is input to respectively laser amplifying module (B), and the light pulse of described laser amplifying module (B) output is successively by optical fiber filter (4) and spacing shaping module (5) output.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: described pumping source (A) is for a plurality of, and a plurality of pumping sources (A) all are connected on the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with successively lens, optical patchcord head and fibre optic isolater between described semiconductor seed source (2) and the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described laser amplifying module (B) is provided with laser bundling device (C) (laser field, popular call, if lower powered, less than 800mW, 2 advance 1 goes out, generally cry by " wavelength division multiplexer ", if high-power, 2 advance 1 goes out, 7 advance 1 goes out, generally be " bundling device ") and gain fibre (D), the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input, and the direct impulse of described pumping source (A) output is connected with another input forward of laser bundling device (C), and described laser bundling device (C) is connecting gain fibre (D).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input by gain fibre (D), reverse impulse and another input Opposite direction connection of laser bundling device (C) of described pumping source (A) output.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with laser amplifying module (B) between described optical fiber filter (4) and the spacing shaping module (5).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with fibre optic isolater between described semiconductor nanosecond seed source (2) and the laser amplifying module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: laser amplifying module (B) is for a plurality of between described optical fiber filter (4) and the spacing shaping module (5), and a plurality of laser amplifying modules (B) cascade couples together.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device is characterized in that: be provided with fibre optic isolater between the adjacent laser amplifier module (B).
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described laser bundling device (C) is wavelength division multiplexer or high power bundling device.
Described a kind of random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: described gain fibre (D) is the single mode of doped rare earth element ion or double clad gain fibre.
As shown in Figure 1, semiconductor nanosecond seed source (2) can adopt the semiconductor seed source of coaxial type, dual-in-line type or the encapsulation of butterfly type, the response speed of seed source is at 200ps or faster, seed source can be with temperature control chip, make output wavelength more stable, can with fiber grating, make output spectral width wider.
Seed source modulation circuit (1) is random waveform electricity pulse-generating circuit, for semiconductor nanosecond seed source provide and drive and modulation, under the pulse output state, the maximum drive current that modulation circuit provides is 2-3 times under the continuous light mode of operation, the rising edge of electricity pulse signal can increase exponentially the power output of semiconductor nanosecond seed source less than 5 nanoseconds, again can broadening seed source output spectral width, reduce the gain multiple of follow-up amplifying stage, suppress the stimulated Brillouin scattering effect.
Amplifier synchronous modulation circuit (3) provides drive current for the amplifying stage pumping source, and itself and seed source modulation circuit have same set of clock system, realizes synchronous pump, guarantees the only pumping source work of amplifier when seed light is arranged.
Optical isolator is for preventing the return light loss cur of follow up amplifier component, and pumping source (A) is the continuous conductor laser with tail optical fiber, and output wavelength is selected according to the absorption bands of gain media, and power output is selected according to length and the doping content of gain media.
Laser amplifying module (B) is provided with laser bundling device (C) and gain fibre (D), wherein gain fibre is the pulse amplifier of all optical fibre structure, pump mode can adopt the mode of forward pumping, backward pump or two directional pump, and gain media adopts rare earth ion doped optical fiber etc.According to actual needs, can adopt the mode of one pole or casacade multi-amplifier cascade, consist of the Pulse Power Magnification module.
Optical fiber filter (4) can adopt optical-fiber type band pass filter, narrow band filter, fiber grating etc., and the spectral width of Output of laser is carried out broadening or compression and noise suppressed etc.; Output Shaping module (5) can adopt set of lenses, and space spot size, beam quality are controlled flexibly, also can adopt the delivery with all optical fibre structure of return optical protection function.
The pulse of semiconductor nanosecond seed source output nanosecond order, the width of pulse, repetition rate, pulse shape drive realization by the seed source modulation circuit, according to actual needs for follow-up wavelength division multiplexing power amplifier module provides seed laser.The wavelength division multiplexing power amplifier module is made of one pole or multi-stage power amplifier, the drive circuit of all pumping sources has identical clock with the seed source drive circuit, realize driven in synchronism, only when the seed pulse input is arranged, pump laser is just worked, the mode of synchronous pump can suppress amplified spont-aneous emission and produce, and reduces the power consumption of system.It adopts filter, compound lens etc. with the spacing shaping module optical fiber filtering, and accurate time-frequency domain control is carried out in the nanosecond pulse after amplifying, and the optimization beam quality suppresses the frequency domain noise.
Embodiment one:
As shown in Figure 2, for adopting the seed source of 1064nm wave band coaxial packaging, realize Pumped high-fidelity enlarged diagram, implementation detail:
Seed source modulation circuit (1) provides drive current for semiconductor nanosecond seed source (2), and as required, the electric signal waveform of modulation circuit output can be flat-head type, Gaussian, triangular form, and its repetition rate is adjustable at 10-1000kHz, and pulse duration is adjustable.Modulation circuit is under the pulse output state, and the maximum drive current that can provide is 2-3 times under the continuous light mode of operation, and the rising edge of electricity pulse signal improves the power output of seed source, the broadening output spectral width less than 5 nanoseconds.
The semiconductor nanosecond seed source (2) of high-speed response is exported random waveform, repetition rate and the adjustable space nanosecond laser pulses of pulse duration under the effect of drive current, its spectral centroid wavelength is near 1064nm.
The spatial light of seed source output focuses on the optical patchcord head through short focus lens, realize the coupling of seed laser pulse from the space to optical fiber, for preventing the return light loss cur of follow up amplifier component, add the polarization irrelevant fibre optic isolater A1 of 1064nm wave band after the optical patchcord head, the transmitance of isolator is more than 80%.
Amplifier synchronous modulation circuit (3) provides driving for pumping source (A), and according to pulse duration and the optical fiber link length of seed source, delay reasonable in design, guarantee only when having seed source to be input to amplifier, pump laser is just worked, and realizes the accurate control of time domain in the nanosecond pulse amplification process.
The pump light of the centre wavelength 976nm of the pumping source of amplifier (A) output is coupled in the gain fibre (D) through the wavelength division multiplexer (C) of 980/1064nm with the seed laser that sees through isolator, gain fibre is for mixing the ytterbium monomode fiber, adopt the mode of Pumped, noise figure is less, and the pulse signal to noise ratio is higher.
Nanosecond pulse after gain fibre output is amplified may have the noises such as ASE in its spectral component, pass through narrow band fiber filter (4) again, and filtering noise is realized the accurate control of frequency domain in the nanosecond amplification process.
For adapting to the requirement of spot size under the different application occasion, obtain more excellent beam quality, specpure nanosecond pulse is input to the spacing shaping module (5) that set of lenses consists of, the realization nanosecond pulse is exported from the Optical Fiber Transmission to the space, can also in the spacing shaping module, add faraday's crystal, prevent the pump laser of the return bad amplifying stage of light loss in the environment.
Embodiment two:
As shown in Figure 3, for adopting the seed source of 1550nm wave band butterfly type encapsulation, realize backward pumping high-fidelity enlarged diagram, implementation detail:
Seed source modulation circuit (1) provides drive current for semiconductor nanosecond seed source (2), and as required, the electric signal waveform of modulation circuit output can be flat-head type, Gaussian, triangular form, and its repetition rate is adjustable at 10-1000kHz, and pulse duration is adjustable.Modulation circuit is under the pulse output state, and the maximum drive current that can provide is 2-3 times under the continuous light mode of operation, and the rising edge of electricity pulse signal improves the power output of seed source, the broadening output spectral width less than 5 nanoseconds.
With tail optical fiber, high-speed response semiconductor nanosecond seed source under the effect of drive current, output random waveform, repetition rate and the adjustable nanosecond laser pulses of pulse duration, its centre wavelength is at 1550nm.The semiconductor seed source self of butterfly type encapsulation can be with temperature control chip, guarantee the stable of output wavelength, also can carry out flexible to output spectral width with fiber grating, suppress in the follow-up amplification especially stimulated Brillouin scattering effect of nonlinear effect.
For preventing the return light loss cur of follow up amplifier component, the polarization independent optical isolator of welding 1550nm wave band after the tail optical fiber of semiconductor nanosecond seed source, the transmitance of isolator is more than 80%.
Seed pulse is input to gain fibre (D) behind isolator, gain fibre is er-doped or erbium and ytterbium codoping monomode fiber, and the length of gain fibre and absorption coefficient be flexible choice as required.
Amplifier synchronous modulation circuit (3) provides driving for pumping source (A), and according to pulse duration and the optical fiber link length of seed source, delay reasonable in design, guarantee only when having seed source to be input to amplifier, pump laser is just worked, and realizes the accurate control of time domain in the nanosecond pulse amplification process.
The pump light of the centre wavelength 976nm of pumping source (A) output is coupled in the gain fibre (D) through the wavelength division multiplexer (C) of 980/1550nm, adopts the mode of backward pump, can farthest utilize pump energy, obtains higher power output.
The nanosecond pulse of amplifier output may have the noises such as ASE in its spectral component, pass through narrow band fiber filter (4) again, and filtering noise is realized the accurate control of frequency domain in the nanosecond amplification process.
For adapting to the requirement of spot size under the different application occasion, obtain more excellent beam quality, specpure nanosecond pulse is input to the spacing shaping module (5) that set of lenses consists of, the realization nanosecond pulse is exported from the Optical Fiber Transmission to the space, can also in the spacing shaping module, add faraday's crystal, prevent the pump laser of the return bad amplifying stage of light loss in the environment.
Embodiment three:
As shown in Figure 4, utilize butterfly type encapsulation seed source, the pulse high-fidelity cascade enlarged diagram of Pumped mode.Implementation detail:
Seed source modulation circuit (1) provides drive current for semiconductor nanosecond seed source (2), and as required, the electric signal waveform of modulation circuit output can be flat-head type, Gaussian, triangular form, and its repetition rate is adjustable at 10-1000kHz, and pulse duration is adjustable.Modulation circuit is under the pulse output state, and the maximum drive current that can provide is 2-3 times under the continuous light mode of operation, improves the power output of seed source.
With tail optical fiber, high-speed response semiconductor nanosecond seed source under the effect of drive current, output random waveform, repetition rate and the adjustable nanosecond laser pulses of pulse duration, its centre wavelength is at 1064nm.The semiconductor seed source self of butterfly type encapsulation can be with temperature control chip, guarantee the stable of output wavelength, also can carry out flexible to output spectral width with fiber grating, suppress in the follow-up amplification especially stimulated Brillouin scattering effect of nonlinear effect.
For preventing the return light loss cur of follow up amplifier component, the polarization independent optical isolator of welding 1064nm wave band after the tail optical fiber of semiconductor seed source, the transmitance of isolator is more than 80%.
Amplifier synchronous modulation circuit (3) provides driving for low-power pumping source (A), and according to pulse duration and the optical fiber link length of seed source, delay reasonable in design, guarantee only when having seed source to be input to amplifier, pump laser is just worked, and realizes the accurate control of time domain in the nanosecond pulse amplification process.
The centre wavelength 976nm of pumping source (A) output, the pump light of maximum power 500mW is coupled in the gain fibre (D) through the wavelength division multiplexer (C) of 980/1064nm with the seed laser that sees through isolator, gain fibre is for mixing the ytterbium monomode fiber, adopt the mode of Pumped, noise figure is smaller, and the pulse signal to noise ratio is higher.
Nanosecond pulse after gain fibre output is amplified may have the noises such as ASE in its spectral component, pass through narrow band fiber filter (4) again, and filtering noise is realized the accurate control of frequency domain in the nanosecond amplification process.
For obtaining more high-power nanosecond pulse output, amplifier adopts the mode of two-stage cascade.Laser pulse process high power light isolator through the output of first order monomode fiber amplifier is input to second level amplifier, and described high-power fiber optic isolator has the anti-damage ability of the continuous return light of maximum isolation 2W.
Pumping source centre wavelength 915nm or the 976nm of second level amplifier, the semiconductor laser of peak power output 10W.Delay reasonable in design, under the driving of synchronous modulation circuit 2, only when first order amplifier Output of laser, the pumping source of second level amplifier is just worked, and realizes synchronous pump.
The pump light of second level amplifier output is coupled in the double clad gain fibre (D) with the high power bundling device (C) of the seed laser that sees through high-power optical isolator through 2+1 * 1, gain fibre is for mixing ytterbium big mode field area fibers, optical fiber has the absorption coefficient of 915nm wave band 3-8dB/m, high absorption coefficient can reduce the length of gain media, reduce the amplification process nonlinear effect relevant with length, such as excited Raman and stimulated Brillouin scattering.
For adapting to the requirement of spot size under the different application occasion, obtain more excellent beam quality, the high power nanosecond pulse is input to the spacing shaping module (5) that set of lenses consists of, the realization nanosecond pulse is exported from the Optical Fiber Transmission to the space, can also in the spacing shaping module, add faraday's crystal, prevent the pump laser of the return bad amplifier of light loss in the environment.
Embodiment four:
As shown in Figure 5, utilize butterfly type encapsulation seed source, realize the multistage enlarged diagram of high power pulse high-fidelity.Implementation detail:
Seed source modulation circuit (1) provides drive current for semiconductor nanosecond seed source (2), and as required, the electric signal waveform of modulation circuit output can be flat-head type, Gaussian, triangular form, and its repetition rate is adjustable at 10-1000kHz, and pulse duration is adjustable.Modulation circuit is under the pulse output state, and the maximum drive current that can provide is 2-3 times under the continuous light mode of operation, improves the power output of seed source.
With tail optical fiber, high-speed response semiconductor nanosecond seed source under the effect of drive current, output random waveform, repetition rate and the adjustable nanosecond laser pulses of pulse duration, its centre wavelength is at 1064nm.The semiconductor seed source self of butterfly type encapsulation can be with temperature control chip, guarantee the stable of output wavelength, also can carry out flexible to output spectral width with fiber grating, suppress in the follow-up amplification especially stimulated Brillouin scattering effect of nonlinear effect.
For preventing the return light loss cur of follow up amplifier component, the polarization independent optical isolator of welding 1064nm wave band after the tail optical fiber of semiconductor seed source, the transmitance of isolator is more than 80%.
Amplifier synchronous modulation circuit (3) provides driving for first order pumping source and second level pumping source, and according to pulse duration and the optical fiber link length of seed source, delay reasonable in design, guarantee only when having seed source to be input to amplifier, pump laser is just worked, and realizes the accurate control of time domain in the nanosecond pulse amplification process.
The centre wavelength 976nm of pumping source (A) output, the pump light of maximum power 500mW is coupled in the gain fibre (D) through the wavelength division multiplexer (C) of 980/1064nm with the seed laser that sees through optical isolator, gain fibre is for mixing the ytterbium monomode fiber, adopt the mode of Pumped, noise figure is smaller, and the pulse signal to noise ratio is higher.
Nanosecond pulse after gain fibre output is amplified may have the noises such as ASE in its spectral component, pass through narrow band fiber filter (4) again, and filtering noise is realized the accurate control of frequency domain in the nanosecond amplification process.
Laser pulse process high power light isolator through the output of first order monomode fiber amplifier is input to second level amplifier, and described high power isolator has the anti-damage ability of the continuous return light of maximum isolation 2W.
Wavelength 915nm or 976nm centered by the pumping source of second level amplifier (A), the semiconductor laser of peak power output 10W.Delay reasonable in design, under the driving of amplifier synchronous modulation circuit (3), only when first order amplifier Output of laser, the pumping source of second level amplifier is just worked, and realizes synchronous pump.
The pump light of second level amplifier (A) is coupled in the double clad gain fibre (D) with the high power bundling device (C) of seed laser through 2+1 * 1 that sees through high-power optical isolator, gain fibre is yb-doped double-clad fiber, optical fiber has the absorption coefficient of 915nm wave band 2-3dB/m, and the average pulse power of second level amplifier output is 200-300mW.
For obtaining the more nanosecond pulse of high-average power, add third level power amplifier.The high-power optical isolator of laser pulse process through the output of second level double clad multimode fiber amplifier is input to third level amplifier, and described high power isolator has the anti-damage ability of the continuous return light of maximum isolation 2W.
Wavelength 915nm or 976nm centered by the pumping source of third level amplifier, the semiconductor laser of peak power output 25W, the pump light of its output is coupled in the gain fibre (D) with the high power bundling device (C) of seed laser through 2+1 * 1 that sees through high power isolator 15, gain fibre is large mode field area Yb-doped doubly clad optical fiber, optical fiber has the absorption coefficient of 915nm wave band 3-8dB/m, and the average pulse power of third level amplifier output is 20W.
For adapting to the requirement of spot size under the different application occasion, obtain more excellent beam quality, the high power nanosecond pulse is input to the spacing shaping module (5) that set of lenses consists of, the realization nanosecond pulse is exported from the Optical Fiber Transmission to the space, can also in the spacing shaping module, add faraday's crystal, prevent the pump laser of the return bad amplifier of light loss in the environment.
Embodiment five:
As shown in Figure 6, utilize butterfly type encapsulation seed source, realize the multistage synchronous enlarged diagram of high power pulse high-fidelity.Implementation detail:
Seed source modulation circuit (1) provides drive current for semiconductor nanosecond seed source (2), and as required, the electric signal waveform of modulation circuit output can be flat-head type, Gaussian, triangular form, and its repetition rate is adjustable at 10-1000kHz, and pulse duration is adjustable.Modulation circuit is under the pulse output state, and the maximum drive current that can provide is 2-3 times under the continuous light mode of operation, improves the power output of seed source.
With tail optical fiber, high-speed response semiconductor nanosecond seed source under the effect of drive current, output random waveform, repetition rate and the adjustable nanosecond laser pulses of pulse duration, its centre wavelength is at 1064nm.The semiconductor seed source self of butterfly type encapsulation can be with temperature control chip, guarantee the stable of output wavelength, also can carry out flexible to output spectral width with fiber grating, suppress in the follow-up amplification especially stimulated Brillouin scattering effect of nonlinear effect.
For preventing the return light loss cur of follow up amplifier component, the polarization irrelevant light of welding 1064nm wave band is isolated after the tail optical fiber of semiconductor seed source, and the transmitance of isolator is more than 80%.
Amplifier synchronous modulation circuit (3) is the pumping source of first order amplifier, the pumping source of the pumping source of second level amplifier and third level amplifier provides driving, and according to pulse duration and the optical fiber link length of seed source, delay reasonable in design, guarantee only when having seed source to be input to amplifier, pump laser is just worked, and realizes the accurate control of time domain in the nanosecond pulse amplification process.
The centre wavelength 976nm of pumping source (A) output, the pump light of maximum power 500mW is coupled in the gain fibre (D) through the wavelength division multiplexer (C) of 980/1064nm with the seed laser that sees through optical isolator, gain fibre is for mixing the ytterbium monomode fiber, adopt the mode of Pumped, noise figure is smaller, and the pulse signal to noise ratio is higher.
Nanosecond pulse after gain fibre output is amplified may have the noises such as ASE in its spectral component, pass through narrow band fiber filter (4) again, and filtering noise is realized the accurate control of frequency domain in the nanosecond amplification process.
Laser pulse process high power isolator through the output of first order monomode fiber amplifier is input to second level amplifier, and described high power isolator has the anti-damage ability of the continuous return light of maximum isolation 2W.
Wavelength 915nm or 976nm centered by the pumping source of second level amplifier (A), the semiconductor laser of peak power output 10W.Delay reasonable in design, under the driving of amplifier synchronous modulation circuit (3), only when first order amplifier Output of laser, the pumping source of second level amplifier is just worked, and realizes synchronous pump.
The pump light of second level amplifier is coupled in the double clad gain fibre (D) through the high power bundling device (C) of 2+1-1 with the seed laser that sees through high-power optical isolator, gain fibre is yb-doped double-clad fiber, optical fiber has the absorption coefficient of 915nm wave band 2-3dB/m, and the average pulse power of second level amplifier output is 200-300mW.
For obtaining the more nanosecond pulse of high-average power, add third level power amplifier.The high-power optical isolator of laser pulse process through the output of second level double clad multimode fiber amplifier is input to third level amplifier, and described high power isolator has the anti-damage ability of the continuous return light of maximum isolation 2W.
Wavelength 915nm or 976nm centered by the pumping source of third level amplifier, the semiconductor laser of peak power output 10-30W, the pump light of its output is coupled in the gain fibre (D) with the high power bundling device (C) of seed laser through 6+1 * 1 that sees through high-power optical isolator, gain fibre is large mode field area Yb-doped doubly clad optical fiber, optical fiber has the absorption coefficient of 915nm wave band 3-8dB/m, and the average pulse power of third level amplifier output is 30-100W.
For adapting to the requirement of spot size under the different application occasion, obtain more excellent beam quality, the high power nanosecond pulse is input to the spacing shaping module (5) that set of lenses consists of, the realization nanosecond pulse is exported from the Optical Fiber Transmission to the space, can also in the spacing shaping module, add faraday's crystal, prevent the pump laser of the return bad amplifier of light loss in the environment.
Claims (11)
1. random waveform nanosecond pulse high-fidelity amplifying device, it is characterized in that: include semiconductor nanosecond seed source (2) and pumping source (A), it is any that described semiconductor nanosecond seed source (2) input is electrically connected with its generation waveform of driving, the seed modulation circuit (1) of pulsewidth and repetition rate wideband adjustable nanosecond seed pulse, described pumping source (A) input only is electrically connected with in the situation that there is the seed pulse input to realize the amplifier synchronous modulation circuit (3) of synchronous pump, the pulse of the main pulse of described semiconductor nanosecond seed source (2) output and pumping source (A) output is input to respectively laser amplifying module (B), and the light pulse of described laser amplifying module (B) output is successively by optical fiber filter (4) and spacing shaping module (5) output.
2. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1 is characterized in that: described pumping source (A) is for a plurality of, and a plurality of pumping sources (A) all are connected on the laser amplifying module (B).
3. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1 is characterized in that: be provided with successively lens, optical patchcord head and fibre optic isolater between described semiconductor seed source (2) and the laser amplifying module (B).
According to claim 1 with 3 described a kind of random waveform nanosecond pulse high-fidelity amplifying devices, it is characterized in that: described laser amplifying module (B) is provided with laser bundling device (C) and gain fibre (D), the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input, the direct impulse of described pumping source (A) output is connected with another input forward of laser bundling device (C), and described laser bundling device (C) is connecting gain fibre (D).
5. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1, it is characterized in that: the seed pulse of described semiconductor seed source (2) output is connected with laser bundling device (C) input by gain fibre (D), reverse impulse and another input Opposite direction connection of laser bundling device (C) of described pumping source (A) output.
6. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1 is characterized in that: be provided with laser amplifying module (B) between described optical fiber filter (4) and the spacing shaping module (5).
7. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 6 is characterized in that: be provided with fibre optic isolater between described semiconductor nanosecond seed source (2) and the laser amplifying module (B).
8. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 6, it is characterized in that: laser amplifying module (B) is for a plurality of between described optical fiber filter (4) and the spacing shaping module (5), and a plurality of laser amplifying modules (B) cascade couples together.
9. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 8 is characterized in that: be provided with fibre optic isolater between the adjacent laser amplifier module (B).
10. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1, it is characterized in that: described laser bundling device (C) is wavelength division multiplexer or high power bundling device.
11. a kind of random waveform nanosecond pulse high-fidelity amplifying device according to claim 1, it is characterized in that: described gain fibre (D) is the single mode of doped rare earth element ion or double clad gain fibre.
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