CN103022180A - X-ray radiation detector for ct system - Google Patents
X-ray radiation detector for ct system Download PDFInfo
- Publication number
- CN103022180A CN103022180A CN2012103445402A CN201210344540A CN103022180A CN 103022180 A CN103022180 A CN 103022180A CN 2012103445402 A CN2012103445402 A CN 2012103445402A CN 201210344540 A CN201210344540 A CN 201210344540A CN 103022180 A CN103022180 A CN 103022180A
- Authority
- CN
- China
- Prior art keywords
- semi
- work function
- conducting material
- radiation detector
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 123
- 239000004065 semiconductor Substances 0.000 claims abstract description 91
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 239000002800 charge carrier Substances 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 8
- 238000005137 deposition process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052755 nonmetal Inorganic materials 0.000 claims description 4
- 238000005868 electrolysis reaction Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 238000002591 computed tomography Methods 0.000 description 20
- 229910004613 CdTe Inorganic materials 0.000 description 15
- 239000011669 selenium Substances 0.000 description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 11
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 230000010287 polarization Effects 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000005036 potential barrier Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052714 tellurium Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910004611 CdZnTe Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000918 plasma mass spectrometry Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
The present invention relates to an X-ray radiation detector, particularly the X-ray radiation detector used for a CT system. The X-ray radiation detector is provided with semiconductor material for detection, preferably compound semiconductor. Furthermore the X-ray radiation detector contacts with at least one resistor between the semiconductor material (HL) and contact material (KM), wherein the semiconductor material (HL) and the contact material (KM) respectively have a carrier work function (WHL,WKM). The X-ray radiation detector is characterized in that: an intermediate layer which is composed of intermediate material (Z) is inserted between the semiconductor material (HL) and the contact material (KM), wherein the work function (WZ) of the intermediate material (Z) is between the work function (WHL) of the semiconductor material (HL) and the work function (WKM) of the contact material (KM). Besides, the invention also relates to a CT system in which the X-ray radiation detector is used. The CT system advantageously contacts with at least one ideal resistor according to the invention.
Description
Technical field
The present invention relates to a kind of direct conversion X-radiation detector, direct conversion X-radiation detector especially for the CT system, it has the semi-conducting material that detects usefulness at least, the preferred compound semiconductor, and at least one ohmic contact between semi-conducting material and contact material, wherein semi-conducting material and contact material have respectively the charge carrier work function.
Background technology
Scintillation detector or directly change semiconductor detector for detection of gamma rays and X-radiation is particularly in CT system and double-energy CT system.In scintillation detector, the ray of incident is by electron excitation and be converted into photon and indirectly detection.This based semiconductor material for example the direct transition detector of CdTe, CdZnTe, CdZnSe and CdZnTeSe can count single photon, thereby the direct detection ray.At this, the detector material of semiconducting winding by Metal Contact, for example by platinum or the Metal Contact electrical conductivity that forms of gold be connected with electric supply installation with the electronic equipment of reading of detector.
These contacts are nonideal ohmic contact.The feature of the desirable ohmic contact between two kinds of different materials is that basically the work function of bi-material equates.In practice, this is that difficulty realizes, injects contact or stops contact (injizierenden oder blockierenden Kontakten) because less difference will cause usually.For example p-CdTe or p-CdZnTe are especially true for the larger semiconductor of work function.
Yet ohmic contact is the basic premise of photoelectricity resistance, such as it for example when ray is converted to electric pulse, namely in the detector of directly conversion employed like that.Radiant flux is larger, and charge carrier does not transport through semiconductor-metal-interface just more important with not being obstructed.
Be known that in the detector of directly conversion according to prior art and use Schottky contacts (Schottky-Kontakt) or accurate ohmic contact.What use as metal at this is platinum or gold.Yet when using these metals, the problem that can occur polarizing when operation namely changes owing to the space charge in the semiconductor causes internal electric field.The reason that causes described space charge is nonideal ohmic contact just.
When high-level radiation, for example in CT (computer tomography), polarization strengthens generation especially.The efficient of detector greatly is restricted thus.High radiation density thereby can not be directly and losslessly be converted into electric pulse, the conversion semiconductor detector still can not completely provide accurately measurement result thereby use directly in the CT system.
Summary of the invention
Therefore, the technical problem to be solved in the present invention be find a kind of for detection of the desirable ohmic contact in the direct transition detector of ionizing ray, thereby effect and the detector of avoiding polarization to cause are applicable to high flow measurement.
Above-mentioned technical problem solves by the feature of independent claims.Favourable expansion of the present invention is the theme of dependent claims.
The inventor has realized that and can produce desirable ohmic contact at metal-semiconductor-interface by insert the intermediate layer that is comprised of intermediate materials between the metal that is used as contact material and semiconductor.Reduce work function and the semi-conductive work function difference of contact material by this intermediate layer, even this difference also exists in accurate ohmic contact.
The intermediate layer preferably is comprised of intermediate materials, and its work function is between the work function of semi-conductive work function and contact material.Reduced thus at the interface potential barrier and the difference of the work function of each adjacent materials, pass (ü berwindbar) interface thereby charge carrier is easier.That for each charge carrier classification slower and that therefore cause polarization, material has than the higher mobility of semiconductor (photoelectricity resistance) for what the intermediate layer played a decisive role.These charge carriers to semiconductor-intermediate layer, interface, be this means reducing until avoided of polarization by " suction " thus.The charge carrier that has simultaneously opposite charges flows into semiconductor and reduces space charge by reconfiguring with the slowly charge carrier of assembling there through the intermediate layer from contact material.These two processes can effectively be avoided together space charge and therefore reduce polarization.
Exist other different possibility for the selection of the enforcement in intermediate layer and intermediate materials.But in all execution modes, the work function of intermediate materials is between the work function of the work function of contact material and semi-conducting material.Intermediate materials is for example consisted of or is made of the multiple different material layer that has respectively different work functions by the element of semi-conducting material.Alternatively, the intermediate layer is made of intermediate materials, this intermediate materials at least in semi-conductive nearly surf zone with its formation materialization compound.
Conventional deposition process, for example sputter or evaporation are applicable to intermediate materials is deposited on the semi-conducting material.Alternatively, can be before the deposition intermediate materials etching semiconductor surface.
Basic thought is, by the new structure of non-ohm metal-semiconductor-contact, namely by insert the ohmic contact that the intermediate layer forms unblock between metal and semiconductor.
Correspondingly, the inventor has advised a kind of direct conversion X ray inspection radiation survey device, direct conversion X-radiation detector especially for the CT system, it has the semi-conducting material that detects usefulness at least, the preferred compound semiconductor, and at least one ohmic contact between semi-conducting material and contact material, wherein semi-conducting material and contact material have respectively the charge carrier work function, in order to improve, insert the intermediate layer that is comprised of intermediate materials between semi-conducting material and contact material, wherein the work function of intermediate materials is between the work function of the work function of semi-conducting material and contact material.
Utilize such direct conversion X-radiation detector, even when high-level radiation, in CT (computer tomography), also can generate accurately measurement result.The efficient of detector is by reducing or avoiding polarization and unrestricted.High radiation density therefore can be directly and harmless lost territory be converted into electric pulse.
According to the favourable embodiment setting example of ohmic contact of the present invention such as platinum (Pt) or gold (Au) as contact material.As semiconductor, advantageously as compound semiconductor, for example can use CdTe-, CdZnTe-, CdZnSe-or CdZnTeSe-semi-conducting material.
The below describes the different embodiments in middle material and intermediate layer.In all embodiments, the work function of intermediate materials is between the work function of the work function of contact material and semi-conducting material.For example the work function of semiconductor CdTe is less than the contact material work function of metal such as Pt for example, thereby but the work function of intermediate materials is less than the work function of contact material greater than semi-conductive work function.Alternatively, semi-conductive work function is greater than the work function of contact material.The n semi-conductive situation of mixing for example.In the counter-rotating of this energy scale, because no longer be semi-conductive valence band (hole can move freely) but semi-conductive conduction band (electronics can move freely) is datum mark.According to doping level and the rear processing (Nachprozessierung) of n doped semiconductor, for example for In doping CdTe or CdZnTe for semi-insulated, be that the detector material of high resistant not only exists p-type electric-conducting also to have the N-shaped conduction.
The favourable embodiment in intermediate layer is that intermediate materials is compound semiconductor materials.Intermediate materials is nonmetal corresponding to compound semiconductor advantageously.Material is nonmetal Te in the middle of for example in the situation of CdTe compound semiconductor.
In another embodiment, intermediate materials be come from compound semiconductor in nonmetallic the periods of element in the material of same main group.In the situation of for example CdTe compound semiconductor, advantageously can be from the Se(selenium of the 6th main group as intermediate materials) or the Te(tellurium).
In the another embodiment in intermediate layer, intermediate materials is made of two-layer at least, described two-layerly be comprised of at least two kinds of different materials.For example implement in this embodiment two-layer, three layers or more multi-layered.By having respectively the material layer of different work functions, the work function from the semiconductor to the contact material changed with a plurality of less stages (Stufe).The layer that consists of is more, and the stage is then less, thereby charge carrier is with easier each potential barrier of passing the single interface place.In addition, easier the passing of potential barrier at stage place, then the effect of polarization is less or avoided fully.The change programme of intermediate layer of material is the alternating layer that for example is comprised of Te and Se, and it is between Pt and the CdTe as semi-conducting material as contact material.
Another kind of favourable embodiment is that the materialization compound that will be comprised of at least two kinds of elements is deposited on the semi-conductive surface.At least two kinds of elements advantageously as compound for example as alloy deposition.In a kind of enforcement change programme, be provided with just in time two kinds of elements, in other enforcement change programme, be provided with more than two kinds of for example three kinds or four kinds of elements.The composition of the compound of material, be that the content of each element of compound so changes on the degree of depth in intermediate layer, so that the stage between the different work function is corresponding less.Little stage/potential barrier is easier passing for charge carrier as previously mentioned, thereby greatly reduced the risk of polarization.In the change programme of this embodiment, the composition of compound changes with discrete step, thus defined layer by have forming of changing piecemeal and thereby compound with different work functions consist of.In other change programme, form progressively variation, thereby work function changes continuously also.Progressively change linearly or alternatively non-linearly realization.For example the Se/Te alloy is applied on the CdTe semiconductor, and wherein the material of this alloy composition can be with discrete step and changed continuously.
According to another embodiment, at least nearly surf zone of semi-conducting material and intermediate materials reaction and advantageously generate the new material compound.Then implement the function in intermediate layer by the material compound that semi-conducting material and intermediate materials form.In fact formed in the intermediate layer actual original intermediate materials and the new material compound that is generated by intermediate materials by two-layer at this.In this embodiment, work function advantageously changes piecemeal.
Another kind of favourable embodiment is that etching semiconductor is surperficial before the deposition intermediate layer, thereby not only advantageously removes lip-deep impurity, and removes an at least dvielement of the semi-conducting material in nearly surf zone.The nearly superficial layer that so obtains is used as the intermediate layer in a kind of change programme.In another kind of change programme, this layer is as the extra play between intermediate materials and the semi-conducting material.Advantageously change piecemeal in this work function.
By the intermediate layer, contact material, the particularly metal adhesiveness on semi-conducting material advantageously strengthens.The deposition of intermediate materials on semi-conducting material advantageously realizes by for example evaporation of deposition process, sputter, currentless deposition, electrolysis and/or chemical reaction.In a kind of favourable embodiment, deposition realizes by two kinds in the above-mentioned deposition process of mentioning combination at least.
Directly conversion X-radiation detector totally has following advantage according to embodiment of the present invention:
-by form ohmic contact reduce at the interface polarization and therefore so that the measurement of high radiant flux becomes possibility, as employed in the CT (computer tomography).
-intermediate layer can be applied on the semi-conducting material by conventional deposition process, such as by sputter, evaporation etc.
-reducing the fuzzy of measured pulse, described pulse is similar Gaussian pulse shape and can be further processed it more simply, for example in the counting electronic equipment.
-ohmic contact has the thermal loss power less than non-ohmic contact, thereby less about the required cost of system cools.
-ohmic contact also can be used as CT (computer tomography)-, X ray-and gamma ray detector in contact structures, and
The check of the composition of-contact and checking can realize by the form of depth characteristic analysis with simple material measurement and measurement of concetration, for example by secondary ion mass spectrometry (SIMS), energy dispersion X-ray spectrum (EDX), rutherford back scattering analysis (RBS) or inductivity coupled plasma mass spectrometry (ICPMS).
The in addition CT system that belongs in addition the scope of the invention, in this CT system, can use the X-radiation detector, it comprises at least one detector element, advantageously has according to desirable ohmic contact of the present invention between the detector material of semiconducting winding and contact material, can obtain checking the laminagraphy photo of object by this CT system.
Description of drawings
Below the present invention will be described in more detail by accompanying drawing by preferred embodiment, wherein only show for the feature of understanding necessity of the present invention.Use the following drawings mark: HL: semi-conducting material; KM: contact material; W
HL: the work function of semi-conducting material; W
KM: the work function of contact material; W
Z: the work function of intermediate materials; Z: intermediate materials.
In the accompanying drawing:
The diagram of the work function of material when Fig. 1 to Fig. 4 shows respectively Ideal Ohmic Contact constructed according to the invention in different embodiments.
Embodiment
The diagram of contact material KM, intermediate materials Z and the different work functions of semi-conducting material HL when Fig. 1 to Fig. 4 shows respectively Ideal Ohmic Contact constructed according to the invention in different embodiments.That unit is that work function W and the abscissa of eV is position coordinates x at ordinate.Compound semiconductor CdTe and Pt metal are used separately as semi-conducting material HL and contact material KM.Semi-conducting material HL and contact material KM have respectively charge carrier work function W
HLAnd W
KM, work function W wherein
KMGreater than work function W
HL
Between semi-conducting material HL and contact material KM, insert the intermediate layer that is formed by intermediate materials Z according to the present invention.In addition according to the present invention, the work function W of intermediate materials Z
ZBe positioned at the work function W of semi-conducting material HL
HLWork function W with contact material KM
KMBetween.Fig. 1 to Fig. 4 is divided into respectively the enforcement of intermediate layer and intermediate materials Z.
In Fig. 1, intermediate materials Z be come from compound semiconductor in the material of same main group of nonmetallic the periods of element.Compound semiconductor nonmetal is the Te from the 6th main group, and intermediate materials Z correspondingly is polycrystalline Se.According to the present invention, the work function W of Se
ZBe positioned at work function W
HLWith work function W
KMBetween.Polycrystalline Se is deposited on semiconductor CdTe (Cd
1-xZn
xTe, 0≤x≤1) the upper rich Se intermediate layer that produces.In semi-insulating CdTe, the work function W of Se
Z(about 5.6 ± 0.3eV) slightly greater than the work function W of semiconductor CdTe
HL(5.4eV) and simultaneously less than the work function W of Pt
KM(5.65eV) because the charge carrier number that exists among the semi-conducting material HL is so little so that its only a small amount of impact because the ray charge carrier that produces of X ray for example.The other mobility 230cm in the hole among the polycrystalline Se
2The mobility 50-80cm of/Vs in the CdTe
2/ Vs.By alloying (Einlegieren) or the diffusion (Eindiffundieren) possible be to realize by stages hardly this transition.Such transition when room temperature be ohm and suppress the contact that charge carrier produces in the gathering at potential barrier place and owing to different work functions.
The intermediate materials Z in the intermediate layer of Fig. 2 and Fig. 3 is respectively by the alloy composition of material Se and Te.The Se-Te-intermediate layer is applied to semi-conducting material HL by deposition, is CdTe(Cd at this
1-xZn
xTe, 0≤x≤1) on.The content of the composition of alloy and two kinds of composition Se and Te changes in the intermediate layer.Form the alloy of richer Se in a side that contacts with semi-conducting material HL at the side ratio of the intermediate materials Z that contacts with contact material KM.Otherwise a side that correspondingly, contacts with semi-conducting material HL is than the richer Te of a side that contacts with contact material KM.
According to the embodiment of Fig. 2, the degree of depth in the intermediate layer forms continuously variation, thus the work function W of each " layer "
ZAlso variation and charge carrier can more easily pass each " potential barrier " continuously.The variation of continuous linearity is illustrated by solid line, and continuous nonlinear variation is shown by dashed lines.
According to Fig. 3, the composition of alloy changes with discrete step, namely changes piecemeal.This for example has different each layer realization that form by depositing successively.For each layer, can realize by stages hardly transition by alloying or diffusion.So transition as also illustrating among Fig. 1, is ohm when room temperature and contact that suppress that charge carrier is gathered on the potential barrier and produce owing to different work functions.
When implementing the Ideal Ohmic Contact of Fig. 4, etching semiconductor material HL, be CdTe(Cd at this
1-xZn
xTe, 0≤x≤1) surface.The zone on the etched nearly surface of semi-conducting material HL is rich Te.This so that more easily deposit Se or Te with and in the lip-deep connection of semi-conducting material HL.This richness Te layer has formed the continuous transition that forms corresponding to etch effects, and it plays a part such as intermediate layer (dashed region).Etching for example realizes by the organic solvent that contains Br or I.In this embodiment, in ohmic contact, there is not to insert additional intermediate materials Z as independent intermediate layer.The work function that dotted line shows respectively the change in concentration that relies on each intermediate materials Z changes, and wherein this also can be understood as concentration curve, and Cd is just in time opposite with Te.Two curves reflect the relativeness of Te and Cd thus.More near the surface of semi-conducting material HL, Te concentration is larger and Cd concentration is less, and more gos deep into semi-conducting material HL, and Te concentration is less and Cd concentration is larger.
Generally, the present invention has advised a kind of X-radiation detector, X-radiation detector especially for the CT system, it has the semi-conducting material that detects usefulness at least, the preferred compound semiconductor, and at least one ohmic contact between semi-conducting material and contact material, wherein semi-conducting material and contact material have respectively the charge carrier work function, to its further improvement, thereby so that insert the intermediate layer that is comprised of intermediate materials between semi-conducting material and contact material, wherein the work function of intermediate materials is between the work function of the work function of semi-conducting material and contact material.
The present invention also shows a kind of CT system, uses the X-radiation detector in this CT system, and it advantageously has at least one according to desirable ohmic contact of the present invention.
Although the present invention at length is explained and illustrated by preferred embodiment, the present invention is not subject to disclosed example and those skilled in the art can obtain other change programme thus, and does not break away from protection scope of the present invention.
Claims (9)
1. directly change the X-radiation detector for one kind, especially for the direct conversion X-radiation detector of CT system, it has at least:
1.1. detect the semi-conducting material of usefulness, the preferred compound semiconductor, and
1.2. at least one ohmic contact between semi-conducting material (HL) and contact material (KM), wherein
1.3. described semi-conducting material (HL) and described contact material (KM) have respectively charge carrier work function (W
HL, W
KM), it is characterized in that,
1.4. between described semi-conducting material (HL) and contact material (KM), insert the intermediate layer that is formed by intermediate materials (Z), the work function (W of wherein said intermediate materials (Z)
Z) be positioned at the work function (W of described semi-conducting material (HL)
HL) and the work function (W of described contact material (KM)
KM) between.
2. according to the claims 1 described X-radiation detector, it is characterized in that described intermediate materials (Z) is compound semiconductor materials, and is preferably nonmetal.
3. according to the claims 1 or 2 described X-radiation detectors, it is characterized in that, described intermediate materials (Z) be with described compound semiconductor in the material of same main group of nonmetallic period of element.
4. according to each described X-radiation detector in the claims 1 to 3, it is characterized in that, described intermediate materials (Z) have by at least two kinds of different materials form two-layer at least.
5. according to each described X-radiation detector in the claims 1 to 4, it is characterized in that described intermediate materials (Z) is by having different work function (W
Z1-W
Z4) the materialization compound that forms of at least two kinds of elements.
6. according to each described X-radiation detector in the claims 1 to 5, it is characterized in that having at least the material compound of described intermediate materials (Z) and described semi-conducting material (HL) in the intermediate layer in the near surface zone of described semi-conducting material (HL).
7. according to each described X-radiation detector in the claims 1 to 6, it is characterized in that, described intermediate layer comprises the near surface zone of semi-conducting material (HL), removes a class atom in the described semi-conducting material (HL) by etching from described near surface zone.
8. according to each described X-radiation detector in the claims 1 to 7, it is characterized in that, described intermediate layer is formed on the surface of described semi-conducting material (HL) by deposition process, particularly evaporation, sputter, currentless deposition, electrolysis and/or chemical reaction.
9. CT system, it has according to each described X-radiation detector in the claims 1 to 8.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE201110083424 DE102011083424B3 (en) | 2011-09-26 | 2011-09-26 | Direct conversion X-ray detector for detecting X-ray in dual energy computer tomography-system, has intermediary layer whose electron affinity lies between electron affinities of semiconductor material and contact material |
| DE102011083424.9 | 2011-09-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103022180A true CN103022180A (en) | 2013-04-03 |
| CN103022180B CN103022180B (en) | 2016-08-17 |
Family
ID=47425840
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210344540.2A Active CN103022180B (en) | 2011-09-26 | 2012-09-17 | X-radiation detector for CT system |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103022180B (en) |
| DE (1) | DE102011083424B3 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633187A (en) * | 2012-08-23 | 2014-03-12 | 西门子公司 | Method for producing a semiconductor element of a direct-converting x-ray detector |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521246A (en) * | 2008-02-05 | 2009-09-02 | 帕纳科有限公司 | Imaging detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI20021255A (en) * | 2002-06-27 | 2003-12-28 | Metorex Internat Oy | X-ray direct detector based on direct conversion |
| FR2844918B1 (en) * | 2002-09-20 | 2005-07-01 | Commissariat Energie Atomique | PROCESS FOR PRODUCING ELECTRODES ON SEMI-CONDUCTOR MATERIAL TYPE II-VI OR A COMPOUND THEREOF |
-
2011
- 2011-09-26 DE DE201110083424 patent/DE102011083424B3/en active Active
-
2012
- 2012-09-17 CN CN201210344540.2A patent/CN103022180B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101521246A (en) * | 2008-02-05 | 2009-09-02 | 帕纳科有限公司 | Imaging detector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633187A (en) * | 2012-08-23 | 2014-03-12 | 西门子公司 | Method for producing a semiconductor element of a direct-converting x-ray detector |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102011083424B3 (en) | 2013-01-17 |
| CN103022180B (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5627377A (en) | Single carrier-type solid-state radiation detector device | |
| CN101401220B (en) | Semiconductor device for radiation detection | |
| US20120267746A1 (en) | Photo detector array of geiger mode avalanche photodiodes for computed tomography systems | |
| US20120111399A1 (en) | Solar cell electrode | |
| EP2323170A1 (en) | Electromagnetic radiation converter and a battery | |
| Jacopin et al. | Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial pin junction GaN nanowires | |
| CN108878576A (en) | Gallium oxide-based ultraviolet detector | |
| CN114063137A (en) | Perovskite p-i-n junction-based gamma ray detection structure and correction method | |
| CN105789336A (en) | Alpha irradiation scintillator detector based on silicon carbide PIN diode structure | |
| CN105845746A (en) | Gamma irradiation scintillator detector based on silicon carbide PIN diode structure | |
| Mandalapu et al. | Al/Ti contacts to Sb-doped p-type ZnO | |
| CN113889548A (en) | Perovskite avalanche transistor-based high-sensitivity detection structure and preparation method thereof | |
| CN102956740B (en) | Detector element, radiation detector and there is the Medical Devices of such detector element and the method for the manufacture of detector element | |
| CN103022180A (en) | X-ray radiation detector for ct system | |
| US20050184320A1 (en) | Photoconductor having an embedded contact electrode | |
| EP1391940B1 (en) | Semiconductor radiation detecting element | |
| CN114709271B (en) | Microstrip detector and preparation method thereof | |
| Sklyarchuk et al. | Determination of the Depletion Region Thickness in X/γ–Ray Detectors with a Schottky Contact | |
| KR101699380B1 (en) | Semiconductor radiation detecting device | |
| Pan et al. | Inorganic Perovskite CsPbBr 3 Gamma-Ray Detector | |
| US20050056829A1 (en) | Reducing dark current of photoconductor using heterojunction that maintains high x-ray sensitivity | |
| US8258482B2 (en) | Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof | |
| EP3055887B1 (en) | Multi-pixel avalanche photodiode | |
| EP3730972A1 (en) | Radiation detection device for detecting gamma or x-ray radiation quanta | |
| US20240154046A1 (en) | Electromagnetic wave detector and electromagnetic wave detector array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220126 Address after: Erlangen Patentee after: Siemens Healthineers AG Address before: Munich, Germany Patentee before: SIEMENS AG |